JP5037044B2 - カラー・イメージ・センサ - Google Patents
カラー・イメージ・センサ Download PDFInfo
- Publication number
- JP5037044B2 JP5037044B2 JP2006182234A JP2006182234A JP5037044B2 JP 5037044 B2 JP5037044 B2 JP 5037044B2 JP 2006182234 A JP2006182234 A JP 2006182234A JP 2006182234 A JP2006182234 A JP 2006182234A JP 5037044 B2 JP5037044 B2 JP 5037044B2
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- color
- image sensor
- color image
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- color filter
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Description
2 イメージ・センサ
3 格子マスタ
4 マスク
5 顕微鏡
6 UV放射
11 低屈折率材料
12 高屈折率材料
13 複製された格子構造
21 ピクセル
41 透明マスク・エリア
42 不透明マスク・エリア
51、52 位置合せ方向
90 入射放射
91 反射放射
92 透過放射
Claims (14)
- 複数のピクセルを有するカラー・イメージ・センサであって、
前記ピクセルの少なくとも一部がカラー・フィルタを備え、
前記カラー・フィルタはゼロ次回折カラー・フィルタを含み、
前記回折カラー・フィルタのうちの少なくとも1つが、異なる屈折率の少なくとも2つの材料を有し、前記少なくとも2つの材料が、回折構造を形成する、ことを特徴とするカラー・イメージ・センサ。 - 入射する光の方向に沿った前記回折構造の断面形状が、正方形、矩形、正弦曲線、または三角形のプロファイルを有する、請求項1に記載のカラー・イメージ・センサ。
- 前記回折構造が、交番する低屈折率層と高屈折率層のスタックを有する、請求項1に記載のカラー・イメージ・センサ。
- 前記回折構造が、50nmから1000nmの間の格子周期を有する請求項1乃至3のいずれか1項に記載のカラー・イメージ・センサ。
- 前記回折構造が、10nmから1000nmの間の格子深さを有する請求項1乃至4のいずれか1項に記載のカラー・イメージ・センサ。
- 誘電体層または誘電体層のスタックが、前記回折構造の下および/または上に配置される請求項1乃至5のいずれか1項に記載のカラー・イメージ・センサ。
- 前記カラー・フィルタが、エポキシと、アクリラートと、ポリカーボネートと、UV硬化形ゾル−ゲル材料と、酸化シリコンと、カーバイドと、ダイヤモンドと、炭素と、炭素誘導体と、ZnOと、ZnSと、酸化チタンとからなるグループから選択された材料または材料の組合せを含む、請求項1乃至6のいずれか1項に記載のカラー・イメージ・センサ。
- 赤と緑と青、または、シアンとマゼンタと黄を含む少なくとも3つの異なるカラーの光を透過する少なくとも3つの異なるカラー・フィルタが存在する、請求項1乃至7のいずれか1項に記載のカラー・イメージ・センサ。
- 請求項1乃至8のいずれか1項に記載のカラー・イメージ・センサを製造する方法であって、
複数のピクセルを有するイメージ・センサが製造され、
前記ピクセルの少なくとも一部がカラー・フィルタを備え、
前記カラー・フィルタが、ゼロ次回折カラー・フィルタとして実現され、
前記回折カラー・フィルタのうちの少なくとも1つが、異なる屈折率の少なくとも2つの材料を有し、前記少なくとも2つの材料が、回折構造を形成する、
ことを特徴とする方法。 - 前記回折構造を形成するための複製ステップと、誘電体層を堆積するための堆積ステップとが、前記ゼロ次回折カラー・フィルタを実現するために実施される請求項9に記載の方法。
- 前記複製ステップについて、ナノリソグラフィ、ナノ・インプリント、UVエンボシング、および/またはUVキャスティングの技法が適用される、請求項10に記載の方法。
- 前記堆積ステップについて、液相からの熱蒸着および/またはスピン・コーティングの技法が適用される、請求項10または11に記載の方法。
- カラー・イメージ検知のためのゼロ次回折カラー・フィルタであって、該回折カラー・フィルタのうちの少なくとも1つが、異なる屈折率の少なくとも2つの材料を有し、前記少なくとも2つの材料が、回折構造を形成する、カラー・フィルタの使用。
- カラー・イメージ・センサに複数のピクセルを設けるステップと、
入射電磁放射を前記イメージ・センサ上に入射させるステップと、
前記入射電磁放射の少なくとも一部を選択的にスペクトル・フィルタリングするステップと、
を備えるカラー・イメージ検知方法であって、
異なる屈折率の少なくとも2つの材料を有し、前記少なくとも2つの材料が、回折構造を形成する少なくとも1つの回折カラー・フィルタを採用することにより、前記スペクトル・フィルタリングが、ゼロ次回折を利用することを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05014149A EP1739751B1 (en) | 2005-06-30 | 2005-06-30 | Color image sensor |
EP05014149.8 | 2005-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007013188A JP2007013188A (ja) | 2007-01-18 |
JP5037044B2 true JP5037044B2 (ja) | 2012-09-26 |
Family
ID=35285628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006182234A Expired - Fee Related JP5037044B2 (ja) | 2005-06-30 | 2006-06-30 | カラー・イメージ・センサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8259201B2 (ja) |
EP (1) | EP1739751B1 (ja) |
JP (1) | JP5037044B2 (ja) |
AT (1) | ATE400062T1 (ja) |
DE (1) | DE602005007879D1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10811450B2 (en) | 2018-01-09 | 2020-10-20 | Samsung Electronics Co., Ltd. | Image sensors |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE602005007879D1 (de) | 2005-06-30 | 2008-08-14 | Suisse Electronique Microtech | Farbbildaufnahmesensor |
JP5132136B2 (ja) * | 2006-11-21 | 2013-01-30 | 株式会社リコー | 光学フィルタ素子、光学フィルタ及びその製造方法 |
JP5409087B2 (ja) * | 2009-04-10 | 2014-02-05 | キヤノン株式会社 | 固体撮像素子 |
JP2011059677A (ja) * | 2009-08-11 | 2011-03-24 | Sumitomo Chemical Co Ltd | ノッチフィルター |
JP2012015424A (ja) * | 2010-07-02 | 2012-01-19 | Panasonic Corp | 固体撮像装置 |
EP2447744B1 (en) | 2010-11-01 | 2021-03-31 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Pixelated optical filter and method for the manufacturing thereof |
EP2702435A4 (en) * | 2011-04-28 | 2015-05-13 | Basf Se | IR REFLECTORS FOR SUNLIGHT MANAGEMENT |
US9177988B2 (en) * | 2011-12-16 | 2015-11-03 | Chromatra, Llc. | Systems and methods for creating full-color image in low light |
EP3205512B1 (en) | 2016-02-09 | 2018-06-13 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Optical security device |
EP3658973B1 (en) | 2017-07-24 | 2021-01-20 | Chromatra, LLC | System and apparatus for color imaging device |
EP3692399B1 (en) | 2017-10-02 | 2023-06-07 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Resonant waveguide grating and applications thereof |
US20230213758A1 (en) * | 2021-12-30 | 2023-07-06 | 3M Innovative Properties Company | Multiband resonant gratings |
Family Cites Families (19)
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US4251137A (en) * | 1977-09-28 | 1981-02-17 | Rca Corporation | Tunable diffractive subtractive filter |
US4255019A (en) * | 1979-04-09 | 1981-03-10 | Rca Corporation | Diffractive color filter |
US4484797A (en) | 1981-07-20 | 1984-11-27 | Rca Corporation | Diffractive subtractive color filter responsive to angle of incidence of polychromatic illuminating light |
JPH01271706A (ja) * | 1988-04-25 | 1989-10-30 | Matsushita Electric Works Ltd | 光フィルタ及び該光フィルタを用いた光電センサー |
JPH02214372A (ja) * | 1989-02-15 | 1990-08-27 | Canon Inc | カラー画像読取り装置 |
JPH0473710A (ja) * | 1990-07-16 | 1992-03-09 | Konica Corp | 画像読み取り装置 |
EP0507487B1 (en) * | 1991-04-05 | 1996-12-18 | Nippon Telegraph And Telephone Corporation | Optical projection exposure method and system using the same |
JP3506144B2 (ja) * | 1992-10-19 | 2004-03-15 | ソニー株式会社 | 画像表示装置及び表示デバイス用光学フィルタ |
US6573961B2 (en) * | 1994-06-27 | 2003-06-03 | Reveo, Inc. | High-brightness color liquid crystal display panel employing light recycling therein |
NO305728B1 (no) * | 1997-11-14 | 1999-07-12 | Reidar E Tangen | Optoelektronisk kamera og fremgangsmÕte ved bildeformatering i samme |
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JP3742775B2 (ja) * | 2002-02-21 | 2006-02-08 | 富士フイルムマイクロデバイス株式会社 | 固体撮像素子 |
EP1341235A3 (en) * | 2002-02-28 | 2006-05-10 | Canon Kabushiki Kaisha | Image pickup apparatus |
JP2006516724A (ja) * | 2003-01-15 | 2006-07-06 | マイクロニック レーザー システムズ アクチボラゲット | 欠陥ピクセルを検出する方法 |
DE602005007879D1 (de) | 2005-06-30 | 2008-08-14 | Suisse Electronique Microtech | Farbbildaufnahmesensor |
JP4984634B2 (ja) * | 2005-07-21 | 2012-07-25 | ソニー株式会社 | 物理情報取得方法および物理情報取得装置 |
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-
2005
- 2005-06-30 DE DE602005007879T patent/DE602005007879D1/de active Active
- 2005-06-30 AT AT05014149T patent/ATE400062T1/de not_active IP Right Cessation
- 2005-06-30 EP EP05014149A patent/EP1739751B1/en not_active Not-in-force
-
2006
- 2006-06-28 US US11/477,006 patent/US8259201B2/en active Active
- 2006-06-30 JP JP2006182234A patent/JP5037044B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10811450B2 (en) | 2018-01-09 | 2020-10-20 | Samsung Electronics Co., Ltd. | Image sensors |
US11631710B2 (en) | 2018-01-09 | 2023-04-18 | Samsung Electronics Co., Ltd. | Image sensors |
Also Published As
Publication number | Publication date |
---|---|
EP1739751B1 (en) | 2008-07-02 |
ATE400062T1 (de) | 2008-07-15 |
EP1739751A1 (en) | 2007-01-03 |
US8259201B2 (en) | 2012-09-04 |
DE602005007879D1 (de) | 2008-08-14 |
JP2007013188A (ja) | 2007-01-18 |
US20070002414A1 (en) | 2007-01-04 |
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