JP5036685B2 - 発光素子、発光装置および電子機器 - Google Patents

発光素子、発光装置および電子機器 Download PDF

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Publication number
JP5036685B2
JP5036685B2 JP2008275276A JP2008275276A JP5036685B2 JP 5036685 B2 JP5036685 B2 JP 5036685B2 JP 2008275276 A JP2008275276 A JP 2008275276A JP 2008275276 A JP2008275276 A JP 2008275276A JP 5036685 B2 JP5036685 B2 JP 5036685B2
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layer
light
electrode
substance
emitting element
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Expired - Fee Related
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JP2008275276A
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Japanese (ja)
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JP2009081442A (ja
Inventor
大介 熊木
哲史 瀬尾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008275276A 2004-11-05 2008-10-27 発光素子、発光装置および電子機器 Expired - Fee Related JP5036685B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008275276A JP5036685B2 (ja) 2004-11-05 2008-10-27 発光素子、発光装置および電子機器

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004322996 2004-11-05
JP2004322996 2004-11-05
JP2004342323 2004-11-26
JP2004342323 2004-11-26
JP2008275276A JP5036685B2 (ja) 2004-11-05 2008-10-27 発光素子、発光装置および電子機器

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JP2005320957A Division JP5036164B2 (ja) 2004-11-05 2005-11-04 発光素子、発光装置および電子機器

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JP2009081442A JP2009081442A (ja) 2009-04-16
JP5036685B2 true JP5036685B2 (ja) 2012-09-26

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JP2011236645A Expired - Fee Related JP5358647B2 (ja) 2004-11-05 2011-10-28 発光素子および照明機器

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US (2) US8202630B2 (enExample)
JP (2) JP5036685B2 (enExample)
KR (1) KR101210858B1 (enExample)
CN (1) CN101053093B (enExample)
WO (1) WO2006049334A1 (enExample)

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EP1616864B1 (en) 2003-04-18 2013-12-18 Semiconductor Energy Laboratory Co., Ltd. Quinoxaline derivatives, and organic semiconductor devices, electroluminescent devices and electronic appliances, made by using the derivatives
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CN101053093B (zh) * 2004-11-05 2011-01-26 株式会社半导体能源研究所 发光元件以及采用该发光元件的发光装置
US8729795B2 (en) * 2005-06-30 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US8659008B2 (en) 2005-07-08 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Composite material and light emitting element, light emitting device, and electronic device using the composite material
KR101540037B1 (ko) 2005-09-12 2015-07-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 퀴녹살린 유도체, 및 퀴녹살린 유도체를 사용한 발광소자, 발광장치, 전자 기기
CN101627487B (zh) * 2007-02-21 2011-08-03 株式会社半导体能源研究所 发光元件，发光器件，电子器件和喹喔啉衍生物
US8178216B2 (en) 2007-02-28 2012-05-15 Semiconductor Energy Laboratory Co., Ltd. Quinoxaline derivative, and light-emitting element, light-emitting device, and electronic device including quinoxaline derivative
EP1973386B8 (en) * 2007-03-23 2016-01-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device
JP5574598B2 (ja) 2007-12-03 2014-08-20 株式会社半導体エネルギー研究所 キノキサリン誘導体、およびキノキサリン誘導体を用いた発光素子、発光装置、電子機器
EP2075860A3 (en) 2007-12-28 2013-03-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
JP5333121B2 (ja) * 2009-09-28 2013-11-06 大日本印刷株式会社 有機エレクトロルミネッセンス素子、その製造方法及び発光表示装置
WO2011142267A1 (ja) * 2010-05-12 2011-11-17 帝人株式会社 有機半導体膜及びその製造方法、並びにコンタクトプリント用スタンプ
KR20180081182A (ko) 2010-09-10 2018-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자 및 전자기기
KR101993760B1 (ko) 2011-02-11 2019-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 표시 장치
US8957442B2 (en) 2011-02-11 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
TWI563873B (en) 2011-02-11 2016-12-21 Semiconductor Energy Lab Co Ltd Light-emitting element, light-emitting device, and display device
KR101894898B1 (ko) 2011-02-11 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 사용한 전자 기기
JP2012199231A (ja) 2011-03-04 2012-10-18 Semiconductor Energy Lab Co Ltd 表示装置
TWI562424B (en) 2011-03-25 2016-12-11 Semiconductor Energy Lab Co Ltd Light-emitting panel, light-emitting device, and method for manufacturing the light-emitting panel
KR101960759B1 (ko) 2011-04-08 2019-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 전자 기기, 및 조명 장치
US9083000B2 (en) 2011-04-29 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and lighting device
KR101917752B1 (ko) 2011-05-11 2018-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 모듈, 발광 패널, 발광 장치
WO2013008765A1 (en) 2011-07-08 2013-01-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting module, light-emitting device, and method for manufacturing the light-emitting module
KR101970675B1 (ko) 2011-08-04 2019-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 조명 장치
KR102377360B1 (ko) 2014-08-08 2022-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 조명 장치, 표시 장치, 디스플레이 패널, 전자 기기
JPWO2019220283A1 (ja) 2018-05-18 2021-07-01 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器および照明装置
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WO2020178660A1 (ja) 2019-03-07 2020-09-10 株式会社半導体エネルギー研究所 発光デバイス
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Also Published As

Publication number Publication date
US20080241586A1 (en) 2008-10-02
WO2006049334A1 (en) 2006-05-11
JP2009081442A (ja) 2009-04-16
KR101210858B1 (ko) 2012-12-11
JP5358647B2 (ja) 2013-12-04
CN101053093B (zh) 2011-01-26
CN101053093A (zh) 2007-10-10
KR20070085793A (ko) 2007-08-27
US8202630B2 (en) 2012-06-19
US8455114B2 (en) 2013-06-04
JP2012049559A (ja) 2012-03-08
US20120280266A1 (en) 2012-11-08

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