JP5035685B2 - Analysis apparatus, processing apparatus, measurement apparatus, exposure apparatus, substrate processing system, analysis method, and program - Google Patents

Description

  The present invention relates to an analysis apparatus, a processing apparatus, a measurement apparatus, an exposure apparatus, a substrate processing system, an analysis method, and a program, and more specifically, for forming a device pattern on an object provided for device manufacturing. Analysis apparatus for analyzing information relating to a series of processes, processing apparatus including the analysis apparatus, measurement apparatus and exposure apparatus, substrate processing system including the various apparatuses, analysis method for performing analysis using the analysis apparatus, and device manufacturing The present invention relates to a program for causing a computer to analyze information related to a series of processes for forming a device pattern on an object to be provided.

  Conventionally, in the manufacturing process of electronic devices such as semiconductor elements and liquid crystal display elements, the line width of a circuit pattern or the like formed on a sensitive substrate such as a semiconductor substrate (wafer) or a liquid crystal display substrate (glass plate) is a design value. Exposure conditions that greatly affect the line width in the exposure apparatus, for example, focus (positional relationship between the image plane of the projection optical system and the sensitive substrate surface with respect to the optical axis direction of the projection optical system) and exposure amount The test exposure is sequentially performed while changing the above, and the optimum focus and exposure amount are obtained from the exposure result. Specifically, while changing the focus at a predetermined step pitch, the exposure amount is changed stepwise within a predetermined range at each step, and the test pattern is sequentially transferred to different areas on the sensitive substrate. As a result, a plurality of transfer images of the test pattern transferred on the sensitive substrate under the condition that at least one of the focus and the exposure amount is different is formed. For example, the optimum focus and exposure amount are obtained based on the result of rearranging the detection results of a plurality of transfer images in a matrix on a two-dimensional coordinate system having the focus and the exposure amount as coordinate axes.

  For example, in conventional CD (Critical Dimension) management, the pattern line width is regarded as a continuous function of focus and exposure dose, and the continuous function is analyzed based on the measurement result of the critical line width of each exposure field by test exposure. Created by. Then, from a continuous function in the two-dimensional coordinate plane having the focus and the exposure amount as coordinate axes, a so-called process window that is an area of focus and exposure amount having an allowable line width is determined, and each point in the pattern region is determined. The setting values of the focus and the exposure amount in the overlapping area of the process window acquired for each pattern are selected as the setting values for actual exposure.

  If the method as described above is used, it is possible to determine in advance the focus and exposure amount for realizing a good pattern line width. However, when analyzing the line width variation factor and optimizing the parameters related to the line width during the process execution, from the viewpoint of throughput, the time required for analysis and optimization is shorter than before. It is required to do. Actually, the variation factor of the pattern line width is not limited to the focus and the exposure amount, and therefore, it is required that more variation factors can be analyzed.

From a first aspect, the present invention is an analysis apparatus that analyzes information related to a series of processes for forming a device pattern on an object provided for device manufacture, and includes at least one of the series of processes. A processing apparatus including a processing apparatus including at least an exposure apparatus that acquires information related to processing contents performed during the execution of the series of processes, and relates to processing contents of the processing apparatus acquired by the acquiring apparatus ; Based on the comparison result between the information about the size of the pattern estimated from the information and the information about the size of the pattern including at least the actual measurement value of the size of the pattern formed on the object, The causal relationship of the processing contents related to the size is analyzed, and the processing apparatus is based on the analysis result. Identify at least one processing content that has caused a variation in the size of the pattern, calculate adjustment information for adjusting the processing content, notify the adjustment information to the processing device, and information on the processing content of the processing device Includes information related to the processing content of the exposure apparatus. The information related to the processing content of the exposure apparatus includes information related to the imaging state of the pattern image on the object and a relative positional shift of the object with respect to the image of the pattern. And at least one of information on energy of an energy beam for transferring a pattern image onto the object .

According to a second aspect of the present invention, there is provided a program for causing a computer to analyze information related to a series of processes for forming a device pattern on an object provided for device manufacture. Information on processing contents performed during execution of the series of processes is acquired by a processing apparatus including at least an exposure apparatus that executes at least a part of the process, and the pattern estimated from the information on processing contents of the processing apparatus is obtained . Causal of processing contents related to the size of the pattern in the processing device based on the comparison result between the information about the size and the information about the size of the pattern including at least the actual measurement value of the size of the pattern formed on the object The relationship is analyzed, and the pattern size in the processing device is analyzed based on the analysis result. The process of identifying at least one processing content that has caused a fluctuation factor of the calculation, calculating adjustment information for adjusting the processing content, and notifying the processing device of the adjustment information is executed by the computer, The information related to the processing content includes information related to the processing content of the exposure apparatus. The information related to the processing content of the exposure apparatus includes information related to an imaging state of a pattern image on the object and the object corresponding to the image of the pattern. And at least one of information on the energy of an energy beam for transferring a pattern image onto the object .

  According to these, in the series of processes, it becomes possible to automatically analyze the causal relationship between the information about the pattern size and the information about the processing contents of the processing device during the execution of the series of processes. Even if the line width accuracy of the exposure pattern deteriorates during the wafer exposure process, it is possible to quickly analyze the cause and cope with it, and to increase the yield rate without reducing the production efficiency. Further, it is not always necessary to perform a test process, and it is not necessary to limit the parameters to be adjusted.

It is a figure showing the schematic structure of the substrate processing system concerning one embodiment of the present invention. It is a figure which shows an example of a table. It is a flowchart which shows the flow of a process of a substrate processing system. It is a data flow of a substrate processing system. It is a flowchart which shows the process of an analyzer.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a schematic configuration of a substrate processing system according to an embodiment of the present invention. The substrate processing system 101 is a system for processing a semiconductor wafer and manufacturing a micro device. As shown in FIG. 1, the substrate processing system 101 includes an exposure apparatus 100, a track 300 arranged adjacent to the exposure apparatus 100, a management controller 500, an analysis apparatus 600, a host system 700, Device forming apparatus group 900.

  The exposure apparatus 100 and the track 300 are in-line connected to each other. Here, in-line connection means that the apparatuses and the processing units in each apparatus are connected via a transfer device that automatically transfers a wafer such as a robot arm or a slider. With this inline connection, the combination of the exposure apparatus 100 and the track 300 can be regarded as one substrate processing apparatus. In FIG. 1, only one substrate processing apparatus (100, 300) is shown for the sake of space, but actually, the substrate processing system 101 includes a plurality of substrate processing apparatuses. Yes. That is, in the substrate processing system 101, a plurality of exposure apparatuses 100 and tracks 300 are provided. Each substrate processing apparatus (100, 300) and device forming apparatus group 900 are installed in a clean room in which temperature and humidity are controlled. In addition, data communication can be performed between devices via a predetermined communication network (for example, LAN: Local Area Network).

  In the substrate processing apparatus (100, 300), a plurality of wafers (for example, 25 or 50) are processed as one unit (referred to as a lot). In the substrate processing system 101, wafers are processed and processed as a basic unit of one lot.

  An exposure apparatus 100 includes an illumination system for emitting exposure illumination light, a stage for holding a reticle on which a circuit pattern or the like illuminated by the illumination light is formed, a projection optical system, a stage for holding a wafer to be exposed, and these Control system. The exposure apparatus 100 drives each of the above stages with respect to the illumination light for exposure, and repeats relative synchronous scanning of the reticle and wafer and stepping of the wafer, thereby changing the reticle circuit pattern to a plurality of different shots on the wafer. Transcribed to the area. That is, the exposure apparatus 100 is a scanning exposure type exposure apparatus. In the exposure apparatus 100, an exposure amount control system that controls the intensity (exposure amount) of illumination light, synchronous control of both stages, and autofocus / leveling control (hereinafter simply referred to as a wafer surface within the depth of focus of the projection optical system). A stage control system that performs focus control) has been established. The exposure amount control system performs feedback control such that the exposure amount matches the target value based on detection values of various exposure amount sensors that can measure the exposure amount. The stage control system realizes synchronous control of both stages by performing feedback control based on the measurement value of the interferometer that measures the position of the stage. The exposure apparatus 100 is provided with a multi-point AF (autofocus) sensor having a plurality of detection points for detecting a focus / leveling shift on the wafer surface. The stage control system matches the wafer surface in the vicinity of the exposure area detected at, for example, nine detection points (9 channels) among the plurality of detection points of the multipoint AF sensor with the image plane of the projection optical system. Focus control is realized by performing feedback control. In the exposure apparatus 100, a two-dimensional coordinate system related to synchronous control of both stages is an XY coordinate system (the synchronous scanning direction is the Y axis), and a coordinate axis parallel to the optical axis of the projection optical system is Z. Stage control is performed under the XYZ coordinate system. Hereinafter, the stage control system will be described by dividing it into a synchronous control system and a focus control system.

  In the exposure apparatus 100, control parameters for determining the operation of each control system can be set. Such control parameters include an adjustment system parameter that requires the adjustment of the apparatus by temporarily stopping the process to obtain the optimum value when changing the set value, and a non-adjustment system that does not require the apparatus adjustment. It is roughly divided into parameters.

  Typical examples of the adjustment system parameters include exposure parameter adjustment parameters for detecting the exposure amount, and illuminance measurement sensor adjustment parameters for measuring the intensity of illumination light on the wafer surface, in relation to the exposure amount control system. As for the synchronous control system, the coefficient value of the correction function for correcting the moving mirror bending provided on the stage holding the wafer or reticle to reflect the laser beam from the interferometer for measuring the position of the stage, etc. Parameters, position loop gain of feedback control, speed loop gain, integration time constant, etc. In the focus control system, focus offset, which is an offset adjustment value for focus control when aligning the wafer surface during exposure with the projection lens image surface, and the wafer surface during exposure coincide with the projection lens image surface (parallel). Leveling adjustment parameters, position detection element (PSD) linearity of each detection point of multi-point AF sensor, offset between sensors, detection reproducibility of each sensor, offset between channels, AF beam on wafer There are an irradiation position (that is, a detection point), other parameters related to AF surface correction, and the like. All of these parameter values need to be adjusted by calibration or trial operation of the apparatus.

  On the other hand, typical examples of the non-adjustment system parameters include, for example, parameters relating to selection of ND filters in the illumination system and exposure amount target values in relation to the exposure amount control system. Further, as for the synchronization control system, for example, there is a scanning speed. In the focus control system, for example, there are a focus sensor selection state for 9 channels, a parameter related to a focus step correction map, which will be described later, a fine adjustment amount of a focus offset, and a scan direction in an edge shot of the outer edge of the wafer. These parameter setting values are parameters that can be changed without calibrating the apparatus, and are often specified by the exposure recipe. Note that the ND filter is selected based on the result of an average power check that is performed only once with an exposure amount target value set appropriately (for example, at a minimum) at the start of exposure on a certain wafer. Depending on the selection of the ND filter, the scan speed is also finely adjusted to some extent.

  The line width of the circuit pattern transferred and formed on the wafer is deviated from the design value due to each exposure error, synchronization accuracy, and focus control error. Therefore, in the exposure apparatus 100, time-series data of control amounts (exposure amount trace data) related to the exposure amount error obtained from the exposure amount control system, and time series of control amounts related to the synchronization accuracy error obtained from the synchronization control system. Data (synchronization accuracy trace data) and time-series data (focus trace data) of control amounts related to the focus error obtained from the focus control system are logged. These trace data are used for analysis in the analysis apparatus 600 described later.

  The exposure apparatus 100 is provided with two stages for holding a wafer. Subsequent processed wafers are alternately loaded on both stages and sequentially exposed. In this way, while performing exposure on a wafer held on one stage, it is possible to load the wafer onto the other stage and perform alignment or the like. Throughput is improved compared to repeated wafer exchange → alignment → exposure. In FIG. 1, a portion that performs scanning exposure on a wafer held on one stage is shown as a processing unit 1, and a portion that performs scanning exposure on a wafer held on the other stage is called a processing unit 2. Show.

  The track 300 is provided with a coater / developer (C / D) 310 that performs resist coating and development, and a measuring instrument 800 that performs various measurements. The C / D 310 and the measuring device 800 are also provided with the processing units 1 and 2, and the processing time is shortened.

  The measuring instrument 800 performs a predetermined measurement on the wafer before and after the exposure of the wafer by the exposure apparatus 100 (that is, before and after). The measuring device 800 is a so-called shot flatness (device topography) that is a surface shape (unevenness) of each wafer surface generated by a circuit pattern or the like formed in each shot region of the front layer on the wafer before exposure (previous). Measure focus step). The measuring device 800 is provided with, for example, an AF sensor that is matched with the exposure apparatus 100, and thereby, shot flatness is measured. The measuring instrument 800 can also measure the line width of a circuit pattern or the like on the wafer after exposure (post facto) transferred by the exposure apparatus 100 and developed by the C / D 310.

  The analysis apparatus 600 is an apparatus that operates independently of the exposure apparatus 100 and the track 300. The analysis apparatus 600 collects various data (for example, processing contents of the apparatus) from various apparatuses and analyzes data related to a series of processes for the wafer. As hardware for realizing such an analysis apparatus 600, for example, a personal computer (hereinafter abbreviated as “PC”) can be employed. In this case, the analysis process is realized by executing an analysis program executed by a CPU (not shown) of the analysis apparatus 600. This analysis program is supplied by a medium (information recording medium) such as a CD-ROM and is executed in a state installed in a PC.

The analysis apparatus 600 can estimate the line width of the pattern transferred and formed at that point based on the exposure amount, the synchronization accuracy, and the focus control error when the pattern is transferred to a certain point on the wafer. The memory (not shown) of the analysis apparatus 600 stores a table group indicating the relationship between the pattern line width and the exposure amount, synchronization accuracy, and focus control errors. FIG. 2 schematically shows an example of this table group. As shown in FIG. 2, this table group includes an index table 51 and n table groups 52 _{1 to} 52 _n . In the index table 51, five representative values of −1.0 to 1.0 mJ / cm ² are designated as representative values of exposure amount control error (exposure amount error). Four representative values of 0.00 to 0.30 μm are designated as representative values of (synchronization accuracy error). In the index table 51 of FIG. 2, a moving average within a predetermined period is adopted as the exposure amount error, and a moving standard deviation within the predetermined period is adopted as the synchronization accuracy error. In both cases, statistical values having a high influence on the line width are adopted. Here, the predetermined period is a period from when the slit-shaped exposure region reaches a certain point on the wafer W until it leaves by relative scanning of both stages.

Each cell of the index table 51 is either the registration of the representative value table group 52 corresponding to the combination of _{i (i} = _1~n, n is for example 20) table name (T ₁₁ through T ₅₄₎ Yes. Each table group 52 _i is provided with a plurality of tables showing the relationship between the Z average offset Z _MEAN and the Z movement standard deviation Z _MSD as statistical values of the focus control error and the line width value. Here, Z _MEAN is a moving average value of the focus control error within the predetermined period (exposure slit passing period), and Z _MSD is a moving standard deviation of the focus control error within the predetermined period. . More precisely, the Z average offset Z _MEAN and the Z movement standard deviation Z _MSD are the Z of the wafer surface from the focus target position based on the device topography of the wafer surface while the exposure slit passes through the pattern portion. This is the deviation of the direction and the inclination direction, that is, the moving average and moving standard deviation of the total focus control error in those directions. Incidentally, the same Z _MEAN, the line width value at that time be a Z _MSD (CD value) is different for each image height (coordinate axis direction perpendicular to the scanning direction), in each table group 52 _i, the image height A table is prepared for each of several representative values (f _{0 to} f _M ).

The analysis apparatus 600 calculates a statistical value of each control error at a certain point (sample point) on the wafer W based on the exposure amount trace data, synchronization accuracy trace data, and focus trace data acquired from the exposure apparatus 100. To do. Then, the analysis apparatus 600 refers to the index table 51, and based on the exposure amount error and the synchronization accuracy error, the table group corresponding to the representative values close to those values is set as the table groups 52 _{1 to} 52 _n (table name T selecting from among the ₁₁ through T _54). For example, assuming that the exposure error is −0.7 and the synchronization accuracy error is 0.005, four table groups 52 ₁ and 52 ₂ registered in the cell corresponding to the combination of representative values in the vicinity of that value. , 52 ₅ , 52 ₆ (table names T ₁₁ , T ₁₂ , T ₂₁ , T ₂₂ ) are selected.

A method for calculating the CD value when four table groups are selected will be described. As a premise, among the representative values of the exposure amount errors corresponding to the selected table group, the smaller one is called the exposure amount error minimum value, and the larger one is called the exposure amount error maximum value. Of the representative values of the synchronization accuracy error corresponding to the selected table group, the smaller one is called the synchronization accuracy error best value, and the larger one is called the synchronization accuracy error worst value. The analysis apparatus 600 refers to the table of the image height f _k (k = 0 to M) corresponding to the in-shot X coordinate of the alignment mark from among the selected four table groups, and the four tables shown below. Is read. Here, k = 0 means that the image height is 0, that is, on the optical axis.
(1) Table 1 of the image height f _k of the table group at the minimum exposure error and the best synchronization accuracy error
(2) Table 2 of the image height f _k of the table group at the minimum exposure error and the worst synchronization accuracy error
(3) Table 3 of image height f _k of the table group at the maximum exposure error and the best synchronization accuracy error
(4) Table 4 of image height f _k of the table group at the maximum exposure error and the worst synchronization accuracy error

First, the analysis apparatus 600 reads the CD values corresponding to Z _MEAN and Z _MSD with reference to Tables 1 and 2. Then, from the CD values read from the tables 1 and 2 by the primary interpolation based on the internal division ratio of the synchronization accuracy error that internally divides between the worst value of the synchronization accuracy error and the best value of the synchronization accuracy error, A CD value corresponding to the synchronization accuracy error is calculated. More specifically, the two CD values read from the two tables 1 and 2 in the two-dimensional plane with the CD and the synchronization accuracy error as the respective coordinate axes, and points corresponding to the two CD values are defined at both ends. The straight line intercept and slope (that is, the straight line equation) are obtained, and the CD value of the point on the straight line corresponding to the synchronization accuracy error is obtained as the CD value corresponding to the synchronization accuracy error. Similarly, with reference to tables 3 and 4, CD values corresponding to Z _MEAN and Z _MSD are read out. Then, from the CD values read from the tables 3 and 4 by primary interpolation based on the internal ratio of the synchronization accuracy error values that internally divide between the synchronization accuracy error worst value and the synchronization accuracy error best value, A CD value corresponding to the synchronization accuracy error is calculated. Subsequently, the calculated two CD values are subjected to exposure by linear interpolation based on the internal ratio of the exposure error value that internally divides between the minimum exposure error value and the maximum exposure error value. A CD value corresponding to the quantity control error is calculated. This CD value becomes the CD value at this sample point. Of course, the interpolation described above is also applied to the case where either the exposure amount error or the synchronization accuracy error is equal to the representative value and two tables are selected instead of the four tables.

  By the way, prior to the estimation of the line width using this table, it is necessary to register the CD value in the table in advance. This CD value is registered based on information obtained from the exposure apparatus 100 and the measuring instrument 800 before the execution of a series of processes. First, the exposure apparatus 100 performs scanning exposure with a predetermined exposure condition set to transfer a test pattern onto a test wafer, and obtains exposure amount trace data, synchronization accuracy trace data, and focus trace data at that time. Then, the test wafer to which the test pattern is transferred is developed on the C / D 310, and the measuring instrument 800 measures the line width of the test pattern. Then, the various trace data, the data relating to the set exposure conditions, and the measurement result of the line width are transferred to the analysis apparatus 600.

  The analysis apparatus 600 calculates statistical values of exposure amount, synchronization accuracy, and focus control error at a sample point to which a test pattern whose line width has been measured is transferred, based on various trace data. Next, the analysis apparatus 600 groups the measurement results for each predetermined range (that is, cells in the table) based on the representative values of various control errors set in the table. Then, the average value of the line width measurement results belonging to the same group is registered in the table as the CD value of the cell. Note that the registered CD value is not based on the measurement result of the measuring instrument 800, but may be based on the value measured by the SEM or the value measured by the OCD method or the like. Alternatively, an aerial image sensor that measures the aerial image of the test pattern may be installed instead, and the calculated value of the aerial image simulation obtained from the aerial image of the test pattern measured by the aerial image sensor may be used.

  Even if the exposure amount error, the synchronization accuracy error, and the focus error are exactly the same, the CD value varies depending on the exposure condition of the exposure apparatus 100 and the design condition of the transferred pattern. Therefore, a table group is prepared for each exposure condition and pattern design condition. As described above, the table group needs to be stored in a database so that an estimated value of the CD value can be searched using exposure conditions, pattern design conditions, exposure amount errors, synchronization accuracy errors, and focus errors as keys. The exposure conditions include exposure wavelength, projection optical system NA, illumination NA, illumination σ, illumination type, depth of focus, etc. The pattern design conditions include design line width (for example, 130 nm), pattern type (isolated line). And line and space patterns). The relationship between these exposure conditions, pattern design conditions, and pattern line width, and a method for setting various conditions such as image height on the table are disclosed in detail in, for example, Japanese Patent Application Laid-Open No. 2001-338870.

  The management controller 500 controls and manages the exposure process performed by the exposure apparatus 100 and manages the scheduling of the exposure apparatus 100. The host system 700 performs overall management of the entire substrate processing system 101. The device forming apparatus group 900 includes a film forming apparatus (CVD (Chemical Vapor Deposition) apparatus) 910 that generates a thin film on a wafer, an etching apparatus 920 that performs etching, and a process that planarizes the wafer by performing chemical mechanical polishing. And a CMP (Chemical Mechanical Polishing) device 930 that performs oxidization, and an oxidation / ion implantation device 940 that oxidizes a wafer or implants ions (impurities). The CVD apparatus 910, the etching apparatus 920, the CMP apparatus 930, and the oxidation / ion implantation apparatus 940 are also provided with two processing units (processing units 1 and 2) to improve throughput. Also, a plurality of CVD apparatuses 910, etching apparatuses 920, CMP apparatuses 930, and oxidation / ion implantation apparatuses 940 are provided in the same manner as the exposure apparatus 100 and the like, and a transfer path for enabling transfer of wafers between them is provided. Is provided. In addition, the device forming apparatus group 900 includes apparatuses that perform wafer probing processing, repair processing, dicing processing, packaging processing, bonding processing, and the like.

  Next, a flow of a series of processes in the substrate processing system 101 will be described. FIG. 3 shows a flowchart of this process, and FIG. 4 shows a flow of wafers and a flow of data in a part related to the repetitive steps in this series of processes. A series of processes of the substrate processing system 101 is scheduled and managed by the host system 700 and the management controller 500. As described above, wafers are processed in units of lots, but both FIGS. 3 and 4 are a series of processes for one wafer. Actually, the processing shown in FIGS. 3 and 4 is repeated for each wafer in lot units.

  As shown in FIGS. 3 and 4, first, a film is formed on the wafer in the CVD apparatus 910 (step 201), the wafer is transferred to the C / D 310, and a resist is applied on the wafer in the C / D 310. (Step 202). Next, the wafer is transferred to the measuring instrument 800, and the measuring instrument 800 uses a shot area (hereinafter referred to as a measurement shot) selected as a measurement target among a plurality of shot areas in the previous layer that have already been formed on the wafer. ), The shot flatness (focus step in the shot area) is measured (step 203). The number and arrangement of the measurement shots can be arbitrary. For example, as shown in FIG. 4, the shots can be eight shots on the outer periphery of the wafer. The measurement result of the measuring instrument 800 (that is, the shot flatness of the measurement shot) is sent to the exposure apparatus 100. This measurement result is used for focus control during scanning exposure in the exposure apparatus 100.

  Subsequently, the wafer is transferred to the exposure apparatus 100, and the circuit pattern on the reticle is transferred onto the wafer by the exposure apparatus 100 (step 205). At this time, the exposure apparatus 100 monitors the exposure amount, synchronization accuracy, and focus trace data during measurement shot exposure and stores them in an internal memory. Next, the wafer is transferred to the C / D and developed by the C / D 310 (step 207). The line width of the resist image is measured by the measuring instrument 800 (step 209). The measurement result (line width data) of the measuring instrument 800 is sent to the analysis device 600. The analysis apparatus 600 performs analysis regarding the line width based on information from the exposure apparatus 100 or the measuring instrument 800 (step 211). As shown in FIG. 4, the analysis apparatus 600 issues a transfer request for various data to the measuring instrument 800 and the exposure apparatus 100 as necessary in the course of analysis, and analyzes each apparatus according to the analysis result. Emits information. Details of analysis processing and data flow in the analysis apparatus 600 will be described later. Further, after the analysis apparatus 600 acquires various data, the exposure apparatus 100 may promptly delete the trace data stored therein.

  On the other hand, the wafer is transferred from the measuring instrument 800 to an etching apparatus 920 included in the device forming apparatus group 900, and etched in the etching apparatus 920 to perform impurity diffusion, aluminum vapor deposition wiring processing, film formation in the CVD apparatus 910, and CMP apparatus. Planarization is performed at 930, ion implantation by the oxidation / ion implantation apparatus 94 is performed as necessary (step 213). Then, the host system 700 determines whether all the processes are completed and all the patterns are formed on the wafer (step 215). If this determination is denied, the process returns to step 201, and if affirmed, the process proceeds to step 217. As described above, a series of processes such as film formation, resist coating, etching, and the like are repeatedly executed for the number of steps, whereby circuit patterns are stacked on the wafer to form a semiconductor device.

  After the repetition process is completed, the probing process (step 217) and the repair process (step 219) are executed in the device forming apparatus group 900. In this step 219, when a memory failure is detected, for example, a replacement process with a redundant circuit is performed. The analysis device 600 can also send information such as the detected location of the line width abnormality to a device that performs probing processing and repair processing. In an inspection apparatus (not shown), a portion where a line width abnormality has occurred on a wafer can be excluded from processing targets for probing processing and repair processing in units of chips. Thereafter, dicing processing (step 221), packaging processing, and bonding processing (step 223) are executed, and a product chip is finally completed. The post-measurement process in step 209 may be performed after the etching in step 213. In this case, line width measurement is performed on the etching image of the wafer.

Next, the analysis process in step 211 will be described in detail. FIG. 5 shows a flowchart of analysis processing in the analysis apparatus 600. As shown in FIG. 5, first, line width data at each sample point of a measurement shot already sent from the measuring instrument 800 is read (step 301), and it is determined whether or not the line width is abnormal (step). 303). This determination is performed, for example, by comparing the difference between the actually measured line width and the design value with a predetermined threshold value. Here, when it is determined that the line width is normal, the analysis process is terminated as it is, and when it is determined that the line width is abnormal, the process proceeds to step 305. In step 305, focus trace data, synchronization accuracy trace data, exposure amount trace data, wafer flatness data, and control parameter setting values are loaded from the exposure apparatus 100, and based on these data, a focus control error is detected. Z _mEAN, Z _MSD is a statistical value, the synchronization accuracy error (moving standard deviation), and calculates the exposure amount error (moving average), with reference to the table group as described above, synchronous accuracy error and the exposure amount error, Z _mEAN, Z The estimated line width corresponding to the _MSD is calculated. Next, it is determined whether the tendency of the estimated value of the line width matches the tendency of the actually measured value, and their consistency is checked (step 307). If they do not match, it can be considered that there is a factor of line width abnormality other than the exposure process (film formation / resist process, pre-measurement process, development process, post-measurement process, etc.). In this case, the process proceeds to step 309, a process stop request is sent as analysis information (see FIG. 4) to each device of the C / D 310 and the device forming device group 900, and the operation of various devices is temporarily stopped. The operator can check other devices. The operator inspects apparatuses other than the exposure apparatus 100 and investigates the cause of the line width abnormality. On the other hand, if the actually measured value and the estimated value substantially coincide with each other in step 307 and the determination is affirmative, it is determined that the cause of the line width abnormality is the exposure apparatus 100 and the process proceeds to step 311.

  In step 311, it is determined whether the focus / synchronization accuracy / exposure amount control error and device step calculated in step 305 are out of specification. Here, for example, when the statistical value regarding the focus is out of the standard, it is determined that the focus control or the shot flatness is included as a factor of the line width abnormality. Further, when the statistical value related to the synchronization error is out of the standard, it is determined that the synchronization error is included as a cause of the line width abnormality. Further, when the statistical value related to the exposure amount is out of the standard, it is determined that the exposure amount error is included as a factor of the line width abnormality. If at least one of the statistical values is out of the standard (exposure apparatus specifications), the determination is affirmed and the process proceeds to step 315. In step 315, adjustment system parameters and control system parameters related to the control error identified as the cause of the line width abnormality are selected, and the selected parameters are optimized.

  In the optimization of this parameter, referring to the table shown in FIG. 2, each control error is brought close to 0 by executing simulation with various combinations of control errors of various focus / exposure amounts / synchronization accuracy. The control parameters may be adjusted. Since the relationship between each control parameter and each control error of focus / exposure amount / synchronization accuracy is known in advance, a set value of the control parameter for bringing each control error close to 0 can be determined.

  On the other hand, if all the statistical values of the control errors are within the standard at step 311, the determination is negative and the process proceeds to step 313. In step 313, it is determined whether or not to optimize the control parameter even if the statistical value of each control error is within the standard. If this determination is negative, the analysis process is terminated, and if the determination is positive, the process proceeds to step 317. In step 317, only non-adjustment parameters among the control parameters are optimized (adjusted). In this case as well, the control parameters (however, only the non-adjustment system parameters) are adjusted so that each control error approaches 0 as in step 315. In this way, the pattern line width can be adjusted without stopping the exposure process in the exposure apparatus 100.

  After executing Steps 315 and 317, the optimized control parameter data is sent to the exposure apparatus 100 as analysis information (see FIG. 4) (Step 319). In the exposure apparatus 100, the set value of the control parameter is updated to the value of the transmitted data, and the exposure process is continued under the control parameter in the future. After execution of step 319, the analysis process is terminated.

  As described above in detail, according to the analysis apparatus 600 according to this embodiment, in a series of processes for manufacturing a device on a wafer, data on the line width of a pattern formed on the wafer and the exposure apparatus. Data related to processing details, that is, processing conditions such as exposure conditions and pattern design information, exposure amount, synchronization accuracy, and control errors of focus, etc. can be automatically analyzed during the execution of a series of processes. It becomes possible. This eliminates the need for test processing and eliminates the need to limit the parameters to be adjusted to the exposure amount, focus, and the like.

  Further, according to the present embodiment, the analysis apparatus 600 performs analysis only when a line width abnormality is confirmed, so that unnecessary analysis processing can be prevented from being performed. In this embodiment, if the difference between the measured line width value and the design value at each sample point of the measurement shot exceeds the threshold even at one location, the line width is abnormal. In this way, strict line width abnormality detection in the measurement shot is possible.

  However, in the line width abnormality detection, a statistical value related to the actual measurement value of the line width in the measurement shot may be calculated, and the calculated statistical value may be compared with a threshold value to detect the line width abnormality. In this case, the influence of the measurement error included in the actual measurement value is reduced, and more accurate line width abnormality detection becomes possible. As such a statistic value, an average value of the line width may be adopted, or an index value indicating the dispersion of the line width (for example, standard deviation, so-called 3σ that is three times the standard deviation, variance, etc.) is adopted. Also good. Further, the sum of the average value and the index value indicating the variation (for example, the average value of the line width + 3σ) may be employed.

  Further, according to the present embodiment, when a line width abnormality is detected, the control parameters of the exposure apparatus 100 are optimized. However, some measures are required for the wafer in which the line width abnormality is detected. . For example, for wafers where line width abnormalities have been confirmed in most of the measurement shots, there is a high possibility that line width abnormalities have occurred even in shot areas that are not measurement shots. Can be excluded. In addition, for a wafer having about one measurement shot in which the line width abnormality is confirmed, for example, it is considered that the line width abnormality has occurred locally. Only the measurement shot can be specified as a shot area to be excluded from the subsequent processing target. In addition, when a plurality of chip areas are included in one shot area, the chip area including the circuit pattern can be excluded from subsequent processing targets in units of chips. Examples of such subsequent processing targets include probing processing and repair processing. In this way, it is possible to improve the processing efficiency by omitting those processes for the portion where the problem has occurred. In addition, when a lot of line width abnormalities occur continuously in a plurality of wafers while processing wafers in units of lots, all the wafers in the lots may be rejected. As described above, by excluding the chip area, shot area, wafer, lot, and the like including the circuit pattern in which the line width abnormality is detected from the subsequent processes, the efficiency of the process can be improved. Information regarding such rejection is also sent to each device as analysis information shown in FIG. Based on the information, each apparatus does not perform processing on the chip area, shot area, wafer, lot, etc. to be excluded.

  In this embodiment, there is one determination level (threshold) for abnormal line width, but a plurality of determination levels can be provided. In this way, it becomes possible to change the processing state of various devices to be executed thereafter according to each determination level. For example, when two threshold values are set and the deviation between the measured line width and the design value is between the two threshold values, only optimization of the control parameters of the exposure apparatus 100 is performed, and pattern rejection is not performed. Thus, when the deviation between the measured line width and the design value exceeds a high threshold value, both optimization of the control parameter and pattern rejection can be performed. In addition to this, it is possible to adjust the processing contents of the C / D 310, the measuring instrument 800, and the various device forming apparatus group 900 in addition to the exposure apparatus 100 in a stepwise manner.

  In the present embodiment, the measuring instrument 800 measures the line width only for measurement shots selected in advance for each wafer. However, the frequency of line width measurement is increased or decreased according to the frequency of occurrence of abnormality. Alternatively, the distribution of the line width measurement positions may be changed according to the occurrence distribution of the abnormality (measurement of the abnormality occurrence point is focused). For example, when the number of measurement shots where line width abnormality is confirmed increases, the number of measurement shots in the wafer can be increased, and when the number of measurement shots where line width abnormality is confirmed decreases It is also possible to reduce the number of measurement shots. Further, the measurement of the line width abnormality may not be performed on all the wafers, and may be performed every several sheets. For example, if no abnormality in the line width occurs continuously for a predetermined number of sheets, the line width measurement is performed every three wafers. If no abnormality in the line width continues after that, the number of line width measurements is set to the wafer 10. It is also possible to set the number of wafers and measure the line width only for the wafer at the beginning of the lot. Of course, when a new line width abnormality occurs, it is of course necessary to increase the line width measurement frequency.

  In addition, when the analysis apparatus 600 confirms an abnormality in the line width, the analysis apparatus 600 may notify the various processing apparatuses to that effect as analysis information.

  In this embodiment, the control parameter is optimized only when a pattern abnormality is detected. However, the present invention is not limited to this, and the control parameter should be optimized every several wafers. Also good. In this case, in step 303 (FIG. 5), it is determined whether or not the wafer is the object of optimization. Also in this case, as described above, the number of wafers to be optimized can be increased or decreased according to the detection frequency of the pattern whose line width is determined to be abnormal.

  In the present embodiment, the causal relationship between the processing content of the exposure apparatus 100 and the pattern line width on the wafer is mainly analyzed. However, the exposure apparatus is not the only processing apparatus that affects the pattern line width. For example, uneven application of the resist applied onto the wafer in the C / D 310 greatly affects the line width of the pattern to be formed. Therefore, it is possible to analyze the causal relationship between not only the exposure apparatus but also another processing apparatus and the pattern line width, and it is possible to identify whether the line width variation factor is in the exposure apparatus or in another processing apparatus. Is more desirable. Therefore, in the present embodiment, the variation factor of the size of the circuit pattern on the wafer based on the degree of coincidence between the estimated value of the line width of the circuit pattern estimated from the processing state of the exposure apparatus and the measured value of the line width. Is determined to be in the exposure apparatus, and if it is determined not to be an exposure apparatus, another processing apparatus is checked. This estimated value is estimated based on a table group (see FIG. 2) showing the relationship between the processing contents of the exposure apparatus 100 obtained in the past and the line width of the circuit pattern. This increases the reliability of the estimated line width.

  In the present embodiment, the processing content of the exposure apparatus includes processing conditions (control errors in focus, exposure amount, and synchronization accuracy during scanning exposure) in addition to processing conditions such as exposure conditions and pattern design information. ing. A table showing the relationship between the processing state of the exposure apparatus and the line width of the circuit pattern is provided for each of a plurality of different set values of processing. In this table, only sample values of the relationship between the processing content of the exposure apparatus and the line width of the circuit pattern are registered, but whatever value the processing content of the exposure apparatus takes, the interpolation calculation An estimated value of the line width corresponding to the processing content can be calculated. In this way, the capacity of the memory for storing the table can be reduced, and the time required for obtaining the estimated value of the pattern line width can be shortened compared to searching for a table having a large number of cells. That is, table management becomes easy.

  This table group may be provided not only for each exposure condition in the exposure apparatus but also for each processing result of another processing apparatus in addition to the exposure condition. For example, the film thickness of the resist applied by C / D 310 can be added as processing conditions similar to the exposure conditions. The processing apparatus corresponding to such processing conditions is mainly a preprocessing apparatus that performs pre-exposure processing. Examples of the pre-processing apparatus include a C / D 310 for applying a resist on a wafer and a measuring instrument 800 for measuring shot flatness. The processing content of the measuring apparatus 800 includes an error value included in the processing result. Further, even processing conditions of a post-processing apparatus that performs post-exposure processing can be added as processing conditions in the table. For example, measurement errors in the measuring instrument 800, PEB processing conditions (temperature uniformity, etc.) and development processing conditions in the C / D 310 can be added as processing conditions, and the measuring object in the measuring instrument 800 is not a resist image but an etching image. In this case, the processing result of the etching apparatus can be added as a processing condition. In this way, it is possible to detect line width anomalies taking into account the processing contents of not only the exposure apparatus but also various processing apparatuses, specify the apparatus for line width variation factors, and identify the line width variation factors.

  Further, according to the present embodiment, based on each trace data of the focus of the exposure apparatus, the exposure amount, and the synchronization accuracy, the variation factor of the line width of the circuit pattern is specified from them. The identification method is to compare the statistical value of the control error, which is a candidate for the variation factor during the transfer of the pattern calculated from various trace data, with the specified value of the control error, It is specified as a variation factor of the line width. As such statistical values, it is possible to adopt moving average values, moving standard deviations, etc. of control errors, but with regard to synchronization accuracy, the moving standard deviation representing the variation is more line width than the moving average value. In this embodiment, the moving standard deviation is adopted. However, it goes without saying that a moving average may be adopted for the synchronization accuracy, and both the moving average and the moving standard deviation may be adopted for the synchronization accuracy and the exposure amount as well as the focus. Further, although the statistical values of the focus control error are the Z average offset (moving average) and the Z moving standard deviation, SFQR and SFQD can also be used.

  In the present embodiment, the measuring instrument 800 measures the shot flatness of the wafer before exposure, but the present invention is not limited to this. For example, after loading a wafer on the exposure apparatus, the stage holding the wafer is kept horizontal (that is, without performing focus control), and is synchronously scanned in the same way as scanning exposure, and is observed by the focus control system at that time. Shot flatness may be measured based on wafer surface fluctuations, and the gradient obtained by subtracting the wafer stage Z position and tilt amount from the focus trace during the previous scanning exposure is measured as shot flatness data. You may make it do. Note that such a method for measuring shot flatness data is disclosed in detail, for example, in Japanese Patent Laid-Open No. 2001-338870 described above.

  In this embodiment, the Z average offset and the Z movement standard deviation, which are statistical values of the focus control error, are based on the shot flatness (device topography). However, the present invention is not limited to this. In calculation, shot flatness need not be considered.

  Further, according to the present embodiment, the optimum value of the control parameter is calculated as the adjustment information for adjusting the processing content specified as the variation factor of the pattern size. In this case, as a rule, a table showing the relationship between the statistical value of the processing contents in the exposure apparatus and the line width of the pattern is referred to, and various statistics are set so that the statistical value of focus, exposure amount, and synchronization accuracy approaches zero. The control parameter will be adjusted. If such adjustment is difficult, the control parameter is adjusted so that the influence on the line width of the pattern with respect to the processing content specified as the variation factor is offset. You may do it. Also in this case, the table group can be used for adjusting the control parameters. That is, it is possible to search for a cell whose various statistical values are not 0 but whose line width is as designed, and adjust the control parameter so that the statistical value becomes the value. Further, by referring to this table, it is possible to specify the processing contents that particularly affect the line width, and therefore it is possible to narrow down the control parameters to be adjusted to those related to the specified processing contents. As a result, the number of control parameters to be adjusted can be reduced, and the adjustment efficiency can be improved. Further, when it is difficult to adjust the control parameters only by adjusting the focus, the synchronization accuracy, and the exposure amount, the exposure conditions and the pattern design conditions can be changed. In this case, the processing conditions of other processing apparatuses such as the resist film thickness applied by the C / D 310 and PEB temperature control may be changed.

  In the present embodiment, when the control parameter is to be optimized even if the exposure amount / synchronization accuracy / focus is not out of the standard, only the non-adjustment system parameter, not the adjustment system parameter, is to be adjusted. It is said. In this way, it is not necessary to stop the operation of the apparatus, so that the throughput is improved.

  As described above, the substrate processing system 101 according to the present embodiment includes the analysis apparatus 600, and using the analysis apparatus 600, processing contents of various processing apparatuses that execute at least a part of a series of processes for the wafer. Specifically, the pattern line width abnormality formed on the wafer is detected, the apparatus that causes the line width abnormality is identified, and the processing content that causes the line width abnormality is identified. For this reason, it is possible to improve throughput by omitting complicated processes such as sequentially setting each of a plurality of different processing conditions in the exposure apparatus and performing a test exposure each time, and an adjustable line width variation factor Since there is no limit to the number of the patterns, more parameters can be adjusted, and finer device adjustment is possible, and the pattern line width accuracy is improved. As a result, it is possible to quickly cope with line width abnormalities and the like, and to quickly optimize parameters, thereby improving the yield of device manufacturing.

  In the substrate processing system 101 according to the present embodiment, in the analysis processing in the analysis apparatus 600, each processing apparatus such as the exposure apparatus 100 and the measuring instrument 800 can send the processing content to the analysis apparatus 600. For example, the exposure apparatus 100 can output not only information relating to the processing results but also information relating to the processing conditions and the state during the processing to the outside of the apparatus. Note that the measuring instrument 800, C / D 310, and each device of the device forming apparatus group 900 can output not only their processing results but also information regarding processing conditions and processing states to the analysis apparatus 600. It may be like this. For example, the measuring instrument 800 can output data relating to the measurement condition of the line width of the pattern (illumination conditions, illumination wavelength, etc.), data relating to the measurement state (eg, data relating to measurement error bias and variation), and the like. It may be. In this case, as in the exposure apparatus 100 and the measuring instrument 800 according to the present embodiment, if these processing conditions and processing states can be output even during a period during which a series of processes are being executed, the data is stored. It is possible to quickly perform the analysis used, and to quickly respond to line width abnormalities and the like.

  In the present embodiment, the analysis result of the analysis apparatus 600 is sent as analysis information to the C / D 310, the measuring instrument 800, and the device forming apparatus group 900 as well as the exposure apparatus 100 even during a series of processes. Each device includes a receiving unit that receives the analysis information. These pieces of analysis information include control parameter adjustment information for each device, and each device changes its control parameter setting value based on this adjustment information. In this way, the apparatus can be adjusted even during the execution of a series of processes, and a quick response to the deterioration of the line width becomes possible.

  For example, the control parameters in the measuring instrument 800 include, for example, selection of a wafer to be measured and selection of a measurement shot. For example, in FIG. 4, eight shot areas on the outer edge of the wafer are selected as measurement shots. If it is determined that these shot areas are not suitable as measurement shots due to uneven application of resist, measurement is performed. You can change the shot. In a sense, it can be said that the above-described frequency adjustment of the line width measurement is also a parameter adjustment of the measuring instrument 800. The control parameters in C / D 310 include, for example, parameters related to uneven application of resist on the wafer. For example, there are the rotation speed of the wafer, the dropping amount of the resist and the dropping interval.

  The analysis apparatus 600 may be incorporated in the measuring instrument 800, the exposure apparatus 100, or another processing apparatus. In this case, since it is necessary to perform analysis regarding the line width by the measuring instrument 800, the exposure apparatus 100, or another processing apparatus in which the analysis apparatus is incorporated, as in the analysis apparatus 600, during the execution of a series of processes, A transmission / reception interface for transmitting / receiving data to / from other devices is required.

  Further, the substrate processing system 101 according to the present embodiment is a system that appropriately performs line width management in the exposure apparatus 100 through cooperation between the exposure apparatus 100 and the measuring instrument 800 via the analysis apparatus 600. Since they are connected inline, processes such as resist coating, pre-measurement, exposure, post-measurement, and development are performed in a short period of time, and the measurement results are analyzed. Therefore, efficient line width management becomes possible.

  Further, although the setting value data of the control parameter is sent from the exposure apparatus 100 to the analysis apparatus 600 together with various trace data, it is not necessary to send these data. The analysis apparatus 600 calculates the change amount of the control parameter setting value, sends it to the exposure apparatus 100, and the exposure apparatus 100 side only has to change the control parameter setting value by the change amount. The trace data sent from the exposure apparatus 100 to the analysis apparatus 600 may be at least one of focus, synchronization accuracy, and exposure amount. The trace data is not limited to the focus, the exposure amount, and the synchronization accuracy, and any data can be adopted as long as it is a processing state related to the pattern line width. Also, the exposure conditions are not limited to those described above, and any exposure conditions that affect the line width, pattern design conditions, synchronous control control conditions, and processing results of other processing apparatuses can be specified. be able to.

  In the present embodiment, the data acquired from the exposure apparatus 100 is the control trace data of exposure amount / synchronization accuracy / focus. However, the exposure apparatus 100 calculates the statistical values of the control errors in advance. You may make it send a statistics value to the analysis apparatus 600. FIG. In this case, it is not necessary to send the trace data to the analysis device 600.

  If a table is created for each process such as resist processing, development processing, and etching processing, and each processing condition is notified to the analysis apparatus, more optimal line width management is realized. That is, a table indicating the relationship between the processing state of various apparatuses other than the exposure apparatus and the line width may be managed, and the line width may be analyzed using the table.

  If the viewpoint is changed, the analysis apparatus 600 obtains information about processing contents that affect the line width from various processing apparatuses, and data that comprehensively manages the information so that the line width of the pattern is as designed. It can be regarded as the management department. In other words, the substrate processing system 101 can be regarded as a system having a data management unit that shares and manages data of each apparatus related to the line width. By managing data related to such comprehensive line widths, it is possible to make a well-balanced system adjustment across various apparatuses when manufacturing a device.

  In this embodiment, the measuring instrument 800 is connected in-line with the exposure apparatus 100 or the like. However, the measuring instrument may be an off-line measuring instrument that is not connected in-line with the exposure apparatus 100 or the track 300. . Further, the pre-measurement device and the post-measurement device may be provided separately, and one of them may be off-line instead of in-line.

  In the present embodiment, the exposure apparatus 100 is a step-and-scan type exposure apparatus, but is not limited thereto, and may be a step-and-repeat type or other type of exposure apparatus. As represented by this, the various apparatuses are not limited to those types. The present invention is not limited to a semiconductor manufacturing process, and can be applied to a manufacturing process of a display including a liquid crystal display element. Line width in all device manufacturing processes, including the process of transferring the device pattern onto the glass plate, the manufacturing process of the thin film magnetic head, the manufacturing process of the imaging device (CCD, etc.), micromachine, organic EL, DNA chip, etc. Of course, the present invention can be applied to management.

  In the above embodiment, the management target is the line width of the line pattern, but it is needless to say that the width of a pattern other than a line pattern such as a box mark may be used. That is, the management target may be a pattern size.

  In the above embodiment, the analysis device 600 is, for example, a PC. That is, the analysis process in the analysis apparatus 600 is realized by executing an analysis program on a PC. As described above, this analysis program may be installable on the PC via a medium, or may be downloadable to the PC via the Internet or the like. Of course, the analysis apparatus 600 may be configured by hardware.

  As described above, the analysis apparatus, processing apparatus, measurement apparatus, exposure apparatus, substrate processing system, analysis method, and program of the present invention are suitable for use in a device manufacturing process.

Claims (57)

An analysis apparatus for analyzing information related to a series of processes for forming a device pattern on an object provided for device manufacture,
An acquisition device that executes at least a part of the series of processes and acquires information on processing contents performed during the execution of the series of processes by a processing apparatus including at least an exposure apparatus ;
Information on the size of the pattern estimated from information on processing contents of the processing device acquired by the acquisition device, information on the size of the pattern including at least an actual measurement value of the size of the pattern formed on the object; Based on the comparison result, the causal relationship of the processing contents related to the size of the pattern in the processing device is analyzed, and at least one of the variation factors of the pattern size in the processing device is analyzed based on the analysis result Specify the processing content, calculate adjustment information for adjusting the processing content, notify the adjustment information to the processing device,
The information on the processing content of the processing apparatus includes information on the processing content of the exposure apparatus,
The information on the processing contents of the exposure apparatus includes information on the image formation state of the pattern image on the object, information on the relative positional deviation of the object with respect to the pattern image, and transfer of the pattern image onto the object. An analysis device including at least one of information on energy of an energy beam for performing . The analysis device according to claim 1,
Based on the actual measurement value of the pattern size, an abnormality in the size of the pattern is detected,
An analysis device that analyzes the causal relationship when an abnormality is detected. The analysis device according to claim 2,
An analysis device that detects an abnormality in the size of the pattern based on a statistical value relating to an actual measurement value of the pattern size. The analysis device according to claim 3,
The analysis device, wherein the statistical value is at least one of an average value of the pattern size, a variation, and a sum of the average value and the variation. The analysis device according to claim 2,
An analysis device that designates a pattern determined to be abnormal in size as a pattern to be excluded from subsequent processing targets. The analysis device according to claim 5,
The object is a semiconductor substrate;
An analysis device that excludes a chip including a pattern determined to be abnormal in size from a processing target in units of chips. The analysis device according to claim 2,
A plurality of levels for determining the abnormal size of the pattern are provided,
An analysis device that specifies the processing content of a processing device to be executed later for each determination level according to the determination level. The analysis device according to claim 2,
When performing the series of processes in order for each of a plurality of objects,
An analysis apparatus that increases or decreases the number of objects to be measured for the size of the pattern or changes the position of the object to be measured according to the detection frequency or detection distribution of the pattern whose size is determined to be abnormal. The analysis device according to claim 2,
An analysis device that notifies the processing device that an abnormality in the size of the pattern has been detected. The analysis device according to claim 1,
When performing the series of processes in order for each of a plurality of objects,
An analysis device that analyzes the causal relationship for only a selected object among the plurality of objects. The analysis device according to claim 10,
An analysis device that increases or decreases the number of objects to be measured for the size of the pattern or changes the position of the object to be measured according to the detection frequency or detection distribution of the pattern whose size is determined to be abnormal. The analysis device according to claim 1,
At least a portion of the series of processes is performed by a plurality of the processing device to perform some of the processes, respectively, the analysis between the plurality of processing devices, a causal relationship between processing contents related to the size of the pattern Analysis device to do. The analysis device according to claim 12,
An analysis device that identifies at least one processing device that causes a variation in the size of the pattern among the plurality of processing devices based on the analysis result of the causal relationship. The analysis device according to claim 12 or 13 ,
An analysis device that estimates the size of the pattern based on information on the relationship between the processing contents of each of the plurality of processing devices and the size of the pattern obtained in the past. The analysis device according to claim 14 ,
The information on the processing contents of each of the plurality of processing devices includes information on processing conditions and processing states for the object,
As information regarding the relationship between the processing contents of each of the plurality of processing devices and the size of the pattern, information regarding the relationship between the processing state of each of the plurality of processing devices and the size of the pattern, An analysis device for each different set value. The analysis device according to claim 15 ,
The information on the processing contents of each of the plurality of processing devices further includes a processing result for the object,
As information regarding the relationship between the processing contents of each of the plurality of processing devices and the size of the pattern, information regarding the relationship between the processing state of each of the plurality of processing devices and the size of the pattern, An analysis device that is provided for each different set value and for each processing result of another processing device. The analysis device according to claim 1,
Wherein at least a part of a series of processes, and at least one of said exposure apparatus for transferring a pattern onto the object, and the pretreatment device of the at least one carrying out the process before transfer of the pattern, after transfer of the pattern An analysis device executed by at least one processing device, including at least one with at least one post-processing device that executes the process. The analysis device according to claim 17 ,
The pre-processing device includes at least one of a coating device that coats a photosensitive agent on the object and a pre-measurement device that measures the state of the object,
The post-processing device includes a developing device that develops a pattern transferred and formed on the object, an etching device that etches the object according to the pattern, a post-measurement device that measures the size of the pattern, An analysis apparatus including at least one of the pattern inspection apparatuses. The analysis device according to claim 12 ,
A statistical value of each of the processing contents of the plurality of processing apparatuses, based on a result of comparison between the specified value of the processing contents, at least one of which was the variable factor of the size of the pattern in each of said plurality of processing devices An analysis device that identifies the processing content. The analysis device according to claim 19 ,
The statistical value of the processing contents of each of the plurality of processing devices is at least one of a moving average value and a moving standard deviation of information regarding a processing state while the pattern is formed on the object. The analysis device according to claim 12 ,
An analysis device that calculates the adjustment information based on information about the relationship between the processing content of each of the plurality of processing devices and the size of the pattern obtained in the past. The analysis device according to claim 21 ,
By referring to information on the relationship between the processing contents of the plurality of processing devices and the pattern size obtained in the past, the influence of the processing contents specified as the variation factor on the size of the pattern is offset. An analysis device that calculates the adjustment information. The analysis device according to claim 21 ,
With reference to the information about the relationship between the processing contents of the plurality of processing devices and the size of the pattern obtained in the past, the processing contents effective for changing the size of the pattern are narrowed down. An analysis device that calculates adjustment information. The analysis device according to claim 21 ,
As the information on the relationship between the size of each processing content and the pattern of the plurality of processing apparatuses, information on the relationship between the size of the processing state and the pattern of the processing apparatus, each of the processing conditions of the plurality of processing devices For each of several different setting values,
An analysis device that calculates adjustment information for adjusting a setting value of the processing condition when the change of the processing condition is more effective for the correction of the size of the pattern. The analysis device according to claim 1 ,
An analysis device that limits processing contents to be adjusted to processing contents that can continue processing on the object even if the processing contents to be adjusted are changed when no abnormality in the size of the pattern is detected. The analysis device according to claim 1 ,
The front Symbol treatment conditions, the exposure conditions for transferring the pattern, design conditions of the pattern, the control conditions of the relative position of the pattern and the object, and other processing apparatus for processing before transferring the pattern An analysis apparatus including at least one of the conditions related to the processing result. The analysis device according to claim 26 ,
The information regarding the imaging state of the image of the pattern on the object is an analysis device that is information on a surface shape reference of the object. A processing device that executes at least a part of a series of processes for forming a pattern on an object,
A processing apparatus comprising the analysis apparatus according to any one of claims 1 to 27 . A measuring device for measuring the size of a pattern formed on an object,
A measurement device comprising the analysis device according to any one of claims 1 to 27 . An exposure apparatus for transferring a pattern onto an object,
An exposure apparatus comprising the analysis apparatus according to any one of claims 1 to 27 . An analysis method for analyzing information on a series of processes for forming a pattern on an object,
An analysis method including a step of analyzing processing contents of a processing device that executes at least a part of the series of processes using the analysis device according to any one of claims 1 to 27 . The processing apparatus according to claim 28, wherein
Furthermore, a processing apparatus that outputs information related to processing contents related to the size of the pattern during the sequential execution of at least a part of the series of processes on the plurality of objects. The processing apparatus according to claim 32 , wherein
The processing content is as follows:
A processing apparatus including at least one of a processing condition, a processing state, and a processing result for the object in the processing apparatus. The processing apparatus according to claim 32 , wherein
At least part of the series of processes is
An application process for applying a photosensitive agent on the object, a pre-measurement process for measuring the state of the object, a development process for developing a pattern transferred and formed on the object, and etching the object according to the pattern A processing apparatus including any one of an etching process for performing a post-processing, a post-measurement process for measuring the size of the pattern, and an inspection process for the pattern. A substrate processing system for executing a series of processes for forming a pattern on an object,
A substrate processing system comprising the analysis apparatus according to any one of claims 1 to 27 . A substrate processing system for executing a series of processes for forming a pattern on an object,
A substrate processing system comprising the processing apparatus according to claim 32 . A program for causing a computer to analyze information related to a series of processes for forming a device pattern on an object provided for device manufacture,
Information regarding processing contents performed during execution of the series of processes is acquired by a processing apparatus including at least an exposure apparatus that executes at least a part of the series of processes, and is estimated from information regarding processing contents of the processing apparatus. A process related to the size of the pattern in the processing device based on a comparison result between the information about the size of the pattern and the information about the size of the pattern including at least an actual measurement value of the size of the pattern formed on the object Analyzing the causal relationship of the content, identifying at least one processing content that causes a variation in the size of the pattern in the processing device based on the analysis result, calculating adjustment information for adjusting the processing content, Causing the computer to execute a procedure for notifying the processing device of adjustment information;
The information on the processing content of the processing apparatus includes information on the processing content of the exposure apparatus,
The information on the processing contents of the exposure apparatus includes information on the image formation state of the pattern image on the object, information on the relative positional deviation of the object with respect to the pattern image, and transfer of the pattern image onto the object. A program that includes at least one of information about energy of the energy beam to perform. The program according to claim 37 ,
Based on the measured value of the pattern size, further causing the computer to execute a procedure for detecting an abnormality in the pattern size,
A program that causes the computer to execute a procedure for analyzing the causal relationship when an abnormality is detected. The program according to claim 38 ,
A program that causes the computer to execute a procedure for detecting an abnormality in the size of the pattern based on a statistical value related to an actual measurement value of the pattern size. The program according to claim 38 ,
A program for causing the computer to further execute a procedure for designating a pattern determined to be abnormal in size as a pattern to be excluded from a subsequent processing target. The program according to claim 40 ,
The object is a semiconductor substrate;
A program for causing the computer to execute a procedure for excluding, in a chip unit, a chip including a pattern determined to be abnormal in size as a procedure to be specified as a pattern to be excluded from a processing target. The program according to claim 38 ,
Provide a determination level of abnormality in the size of the pattern in a plurality of stages,
A program for causing the computer to execute a procedure for specifying processing contents of a processing device to be executed later according to the level of abnormality in the size of the pattern determined at the determination levels of the plurality of stages. The program according to claim 38 ,
When performing the series of processes in order for each of a plurality of objects,
The procedure for increasing or decreasing the number of selected objects for measuring the size of the pattern or changing the position of the object to be measured according to the detection frequency of the pattern determined to be abnormal or the detection distribution, A program that causes a computer to execute further. In the program according to any one of claims 38 to 43 ,
A program for causing the computer to further execute a procedure for notifying the processing device that an abnormality in the size of the pattern has been detected. The program according to claim 37 ,
When performing the series of processes in sequence for a plurality of objects,
A program for causing the computer to execute a procedure for analyzing the causal relationship for only a selected object among the plurality of objects. The program according to claim 45 , wherein
The procedure for increasing or decreasing the number of selected objects for measuring the size of the pattern or changing the position of the object to be measured according to the detection frequency of the pattern determined to be abnormal or the detection distribution, A program that causes a computer to execute further. The program according to claim 37 ,
At least a portion of the series of processes is performed by a plurality of the processing device to perform some of the processes, respectively, the analysis between the plurality of processing devices, a causal relationship between processing contents related to the size of the pattern A program for causing the computer to execute a procedure to execute. The program according to claim 47 ,
A program that causes the computer to further execute a procedure for identifying at least one processing device that causes a variation in the size of the pattern among the plurality of processing devices based on the analysis result of the causal relationship. The program according to claim 47 or 48 ,
A program that causes the computer to execute a procedure for estimating the size of the pattern based on information on the relationship between the processing contents of the plurality of processing devices and the size of the pattern obtained in the past. The program according to claim 49 ,
The information on the processing contents of each of the plurality of processing devices includes information on processing conditions and processing states for the object,
As information regarding the relationship between the processing contents of each of the plurality of processing devices and the size of the pattern, information regarding the relationship between the processing state of each of the plurality of processing devices and the size of the pattern, A program to have for each different setting value. The program according to claim 50 ,
The information on the processing contents of each of the plurality of processing devices further includes a processing result for the object,
As information regarding the relationship between the processing contents of each of the plurality of processing devices and the size of the pattern, information regarding the relationship between the processing state of each of the plurality of processing devices and the size of the pattern, A program for each different setting value and for each processing result of another processing apparatus. The program according to claim 50 ,
Based on the comparison result between the statistical value of the processing content of each of the plurality of processing devices and the specified value of the processing content, at least one of the variation factors of the pattern size in each of the plurality of processing devices A program for causing the computer to execute a procedure for specifying processing contents. The program according to claim 50 ,
A program for causing the computer to execute a procedure for calculating the adjustment information based on information on the relationship between the processing contents of the plurality of processing devices and the size of the pattern obtained in the past. 54. The program according to claim 53 , wherein
By referring to information on the relationship between the processing contents of the plurality of processing devices and the pattern size obtained in the past, the influence of the processing contents specified as the variation factor on the size of the pattern is offset. A program that causes the computer to execute a procedure for calculating the adjustment information. 54. The program according to claim 53 , wherein
With reference to the information about the relationship between the processing contents of the plurality of processing devices and the size of the pattern obtained in the past, the processing contents effective for changing the size of the pattern are narrowed down. A program for causing a computer to execute a procedure for calculating adjustment information. The program according to claim 50 ,
Information relating to the relationship between the processing contents of each of the plurality of processing devices and the size of the pattern is information relating to the relationship between the processing state of each of the plurality of processing devices and the size of the pattern. For each of several different setting values,
A program for causing the computer to execute a procedure for calculating adjustment information for adjusting the processing condition when the change of the processing condition is more effective in correcting the size of the pattern. The program according to claim 37 ,
When the pattern size abnormality is not detected, the program further causes the computer to execute a procedure that limits the processing content to be adjusted to the processing content that can continue the processing on the object even if the processing content is changed. .

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