JP5015947B2 - ゲッター材を含むマイクロメカニカルデバイスの製造方法及び製造されたデバイス - Google Patents
ゲッター材を含むマイクロメカニカルデバイスの製造方法及び製造されたデバイス Download PDFInfo
- Publication number
- JP5015947B2 JP5015947B2 JP2008544013A JP2008544013A JP5015947B2 JP 5015947 B2 JP5015947 B2 JP 5015947B2 JP 2008544013 A JP2008544013 A JP 2008544013A JP 2008544013 A JP2008544013 A JP 2008544013A JP 5015947 B2 JP5015947 B2 JP 5015947B2
- Authority
- JP
- Japan
- Prior art keywords
- getter material
- silicon
- support
- deposition
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 33
- 230000008021 deposition Effects 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000005304 joining Methods 0.000 abstract description 10
- 239000000919 ceramic Substances 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 10
- 229910052756 noble gas Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Glass Compositions (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT002343A ITMI20052343A1 (it) | 2005-12-06 | 2005-12-06 | Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti |
ITMI2005A002343 | 2005-12-06 | ||
PCT/IT2006/000824 WO2007066370A1 (en) | 2005-12-06 | 2006-11-28 | Process for manufacturing micromechanical devices containing a getter material and devices so manufactured |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009518191A JP2009518191A (ja) | 2009-05-07 |
JP2009518191A5 JP2009518191A5 (zh) | 2012-03-01 |
JP5015947B2 true JP5015947B2 (ja) | 2012-09-05 |
Family
ID=37951839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008544013A Active JP5015947B2 (ja) | 2005-12-06 | 2006-11-28 | ゲッター材を含むマイクロメカニカルデバイスの製造方法及び製造されたデバイス |
Country Status (17)
Country | Link |
---|---|
US (1) | US7833880B2 (zh) |
EP (1) | EP1957395B1 (zh) |
JP (1) | JP5015947B2 (zh) |
KR (1) | KR101364623B1 (zh) |
CN (1) | CN101291873B (zh) |
AT (1) | ATE480495T1 (zh) |
AU (1) | AU2006322862C1 (zh) |
CA (1) | CA2623020C (zh) |
DE (1) | DE602006016850D1 (zh) |
DK (1) | DK1957395T3 (zh) |
ES (1) | ES2348613T3 (zh) |
IL (1) | IL191756A (zh) |
IT (1) | ITMI20052343A1 (zh) |
NO (1) | NO20081994L (zh) |
RU (1) | RU2401245C2 (zh) |
TW (1) | TWI325409B (zh) |
WO (1) | WO2007066370A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2922202B1 (fr) * | 2007-10-15 | 2009-11-20 | Commissariat Energie Atomique | Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication. |
EP2484629B1 (fr) * | 2011-02-03 | 2013-06-26 | Nivarox-FAR S.A. | Pièce de micromécanique complexe ajourée |
RU2474912C1 (ru) * | 2011-08-23 | 2013-02-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" (МИЭТ) | Способ получения газопоглощающей структуры |
US9935028B2 (en) * | 2013-03-05 | 2018-04-03 | Global Circuit Innovations Incorporated | Method and apparatus for printing integrated circuit bond connections |
US9870968B2 (en) | 2011-10-27 | 2018-01-16 | Global Circuit Innovations Incorporated | Repackaged integrated circuit and assembly method |
US9966319B1 (en) | 2011-10-27 | 2018-05-08 | Global Circuit Innovations Incorporated | Environmental hardening integrated circuit method and apparatus |
RU2523718C2 (ru) * | 2012-11-20 | 2014-07-20 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" (МИЭТ) | Нанокомпозитная газопоглощающая структура и способ ее получения |
RU2522323C1 (ru) * | 2012-12-29 | 2014-07-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Микроэлектромеханический взрыватель |
RU2522362C1 (ru) * | 2012-12-29 | 2014-07-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана (МГТУ им. Н.Э. Баумана) | Микроэлектромеханический взрыватель изохорический |
US10160638B2 (en) | 2013-01-04 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a semiconductor structure |
US8847373B1 (en) * | 2013-05-07 | 2014-09-30 | Innovative Micro Technology | Exothermic activation for high vacuum packaging |
DE102015224499A1 (de) * | 2015-12-08 | 2017-06-08 | Robert Bosch Gmbh | Spannungsreduzierung beim Laserwiederverschluss durch Temperaturerhöhung |
DE102015226772A1 (de) * | 2015-12-29 | 2017-06-29 | Robert Bosch Gmbh | Gettervorrichtung für ein mikromechanisches Bauelement |
JP6932491B2 (ja) * | 2016-10-31 | 2021-09-08 | 株式会社豊田中央研究所 | Mems装置を製造する方法 |
CN106517082B (zh) * | 2016-11-14 | 2017-11-03 | 北方电子研究院安徽有限公司 | 一种mems吸气剂图形化制备方法 |
CN109879240B (zh) * | 2017-12-06 | 2021-11-09 | 有研工程技术研究院有限公司 | 一种厚膜吸气材料的制备方法 |
FR3083537B1 (fr) * | 2018-07-06 | 2021-07-30 | Ulis | Boitier hermetique comportant un getter, composant integrant un tel boitier hermetique et procede de fabrication associe |
US11508680B2 (en) | 2020-11-13 | 2022-11-22 | Global Circuit Innovations Inc. | Solder ball application for singular die |
CN112614779A (zh) * | 2020-12-17 | 2021-04-06 | 苏州晶鼎鑫光电科技有限公司 | 一种吸气剂图形化的掩膜方式 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4050914A (en) * | 1976-07-26 | 1977-09-27 | S.A.E.S. Getters S.P.A. | Accelerator for charged particles |
US5503285A (en) * | 1993-07-26 | 1996-04-02 | Litton Systems, Inc. | Method for forming an electrostatically force balanced silicon accelerometer |
CA2179052C (en) | 1993-12-13 | 2001-02-13 | Robert E. Higashi | Integrated silicon vacuum micropackage for infrared devices |
US5594170A (en) | 1994-06-15 | 1997-01-14 | Alliedsignal Inc. | Kip cancellation in a pendulous silicon accelerometer |
US5656778A (en) | 1995-04-24 | 1997-08-12 | Kearfott Guidance And Navigation Corporation | Micromachined acceleration and coriolis sensor |
JPH09196682A (ja) | 1996-01-19 | 1997-07-31 | Matsushita Electric Ind Co Ltd | 角速度センサと加速度センサ |
US5821836A (en) | 1997-05-23 | 1998-10-13 | The Regents Of The University Of Michigan | Miniaturized filter assembly |
US6499354B1 (en) | 1998-05-04 | 2002-12-31 | Integrated Sensing Systems (Issys), Inc. | Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices |
US6110808A (en) * | 1998-12-04 | 2000-08-29 | Trw Inc. | Hydrogen getter for integrated microelectronic assembly |
JP2000182511A (ja) * | 1998-12-14 | 2000-06-30 | Yamaha Corp | 電界放射型素子の製造方法 |
US6058027A (en) | 1999-02-16 | 2000-05-02 | Maxim Integrated Products, Inc. | Micromachined circuit elements driven by micromachined DC-to-DC converter on a common substrate |
US6590850B2 (en) | 2001-03-07 | 2003-07-08 | Hewlett-Packard Development Company, L.P. | Packaging for storage devices using electron emissions |
US6534850B2 (en) * | 2001-04-16 | 2003-03-18 | Hewlett-Packard Company | Electronic device sealed under vacuum containing a getter and method of operation |
TW533188B (en) | 2001-07-20 | 2003-05-21 | Getters Spa | Support for microelectronic, microoptoelectronic or micromechanical devices |
US6923625B2 (en) | 2002-01-07 | 2005-08-02 | Integrated Sensing Systems, Inc. | Method of forming a reactive material and article formed thereby |
US6621134B1 (en) | 2002-02-07 | 2003-09-16 | Shayne Zurn | Vacuum sealed RF/microwave microresonator |
US6635509B1 (en) | 2002-04-12 | 2003-10-21 | Dalsa Semiconductor Inc. | Wafer-level MEMS packaging |
ITMI20030069A1 (it) * | 2003-01-17 | 2004-07-18 | Getters Spa | Dispositivi micromeccanici o microoptoelettronici con deposito di materiale getter e riscaldatore integrato. |
US7235461B2 (en) * | 2003-04-29 | 2007-06-26 | S.O.I.Tec Silicon On Insulator Technologies | Method for bonding semiconductor structures together |
CN1594067A (zh) * | 2003-09-08 | 2005-03-16 | 华中科技大学机械科学与工程学院 | 一种低温集成的圆片级微机电系统气密性封装工艺 |
ITMI20032209A1 (it) * | 2003-11-14 | 2005-05-15 | Getters Spa | Processo per la produzione di dispositivi che richiedono per il loro funzionamento un materiale getter non evaporabile. |
ITMI20050616A1 (it) | 2005-04-12 | 2006-10-13 | Getters Spa | Processo per la formazione di depositi getter miniaturizzati e depositi getrter cosi'ottenuti |
-
2005
- 2005-12-06 IT IT002343A patent/ITMI20052343A1/it unknown
-
2006
- 2006-11-20 TW TW095142822A patent/TWI325409B/zh active
- 2006-11-28 EP EP06832341A patent/EP1957395B1/en active Active
- 2006-11-28 ES ES06832341T patent/ES2348613T3/es active Active
- 2006-11-28 KR KR1020087016396A patent/KR101364623B1/ko active IP Right Grant
- 2006-11-28 CA CA2623020A patent/CA2623020C/en active Active
- 2006-11-28 DE DE602006016850T patent/DE602006016850D1/de active Active
- 2006-11-28 AU AU2006322862A patent/AU2006322862C1/en not_active Ceased
- 2006-11-28 CN CN2006800394011A patent/CN101291873B/zh active Active
- 2006-11-28 AT AT06832341T patent/ATE480495T1/de active
- 2006-11-28 JP JP2008544013A patent/JP5015947B2/ja active Active
- 2006-11-28 US US12/094,726 patent/US7833880B2/en active Active
- 2006-11-28 WO PCT/IT2006/000824 patent/WO2007066370A1/en active Application Filing
- 2006-11-28 DK DK06832341.9T patent/DK1957395T3/da active
- 2006-11-28 RU RU2008127306/28A patent/RU2401245C2/ru not_active IP Right Cessation
-
2008
- 2008-04-25 NO NO20081994A patent/NO20081994L/no not_active Application Discontinuation
- 2008-05-27 IL IL191756A patent/IL191756A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US7833880B2 (en) | 2010-11-16 |
RU2008127306A (ru) | 2010-01-20 |
TWI325409B (en) | 2010-06-01 |
US20080293178A1 (en) | 2008-11-27 |
IL191756A0 (en) | 2008-12-29 |
AU2006322862C1 (en) | 2011-12-01 |
CA2623020A1 (en) | 2007-06-14 |
CN101291873A (zh) | 2008-10-22 |
CN101291873B (zh) | 2011-06-15 |
DK1957395T3 (da) | 2011-01-03 |
TW200732245A (en) | 2007-09-01 |
KR101364623B1 (ko) | 2014-02-19 |
ATE480495T1 (de) | 2010-09-15 |
IL191756A (en) | 2012-08-30 |
JP2009518191A (ja) | 2009-05-07 |
EP1957395B1 (en) | 2010-09-08 |
ITMI20052343A1 (it) | 2007-06-07 |
CA2623020C (en) | 2015-10-20 |
AU2006322862B2 (en) | 2011-04-28 |
WO2007066370A1 (en) | 2007-06-14 |
NO20081994L (no) | 2008-06-05 |
ES2348613T3 (es) | 2010-12-09 |
EP1957395A1 (en) | 2008-08-20 |
RU2401245C2 (ru) | 2010-10-10 |
DE602006016850D1 (de) | 2010-10-21 |
AU2006322862A1 (en) | 2007-06-14 |
KR20080081019A (ko) | 2008-09-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5015947B2 (ja) | ゲッター材を含むマイクロメカニカルデバイスの製造方法及び製造されたデバイス | |
JP4558855B2 (ja) | 内部空洞を有する微小構造体の作製方法 | |
JP5571988B2 (ja) | 接合方法 | |
US8844793B2 (en) | Reducing formation of oxide on solder | |
JP2009518191A5 (zh) | ||
US20120132522A1 (en) | Deposition/bonding chamber for encapsulated microdevices and method of use | |
JP6281883B2 (ja) | パッケージ形成方法 | |
AU773042B2 (en) | Bonded products and methods of fabrication therefor | |
JP4865562B2 (ja) | 作動のために不揮発性ゲッター材料を必要とするデバイスの製造方法 | |
JP2015523737A (ja) | 基板アセンブリ、基板をボンディングする方法および装置 | |
US7713786B2 (en) | Etching/bonding chamber for encapsulated devices and method of use | |
Rogers et al. | Wafer bonding processes for the manufacture of microsystems | |
JP2019005853A (ja) | Memsセンサの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090805 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090805 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111018 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20120116 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120508 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120607 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150615 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5015947 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |