JP5013247B2 - 静電四重極レンズシステム、及びこれを用いたリニア加速システム - Google Patents
静電四重極レンズシステム、及びこれを用いたリニア加速システム Download PDFInfo
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- JP5013247B2 JP5013247B2 JP2006525451A JP2006525451A JP5013247B2 JP 5013247 B2 JP5013247 B2 JP 5013247B2 JP 2006525451 A JP2006525451 A JP 2006525451A JP 2006525451 A JP2006525451 A JP 2006525451A JP 5013247 B2 JP5013247 B2 JP 5013247B2
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- 230000001133 acceleration Effects 0.000 title claims description 27
- 238000010884 ion-beam technique Methods 0.000 claims description 51
- 150000002500 ions Chemical class 0.000 description 43
- 238000000034 method Methods 0.000 description 19
- 238000005468 ion implantation Methods 0.000 description 16
- 239000002019 doping agent Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0473—Changing particle velocity accelerating
- H01J2237/04735—Changing particle velocity accelerating with electrostatic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0473—Changing particle velocity accelerating
- H01J2237/04735—Changing particle velocity accelerating with electrostatic means
- H01J2237/04737—Changing particle velocity accelerating with electrostatic means radio-frequency quadrupole [RFQ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
- H01J2237/04924—Lens systems electrostatic
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Particle Accelerators (AREA)
Description
また、本発明の静電四重極レンズシステムは、イオンビームが通る中心軸線の回りに等距離に離間した4つの電極を有し、イオンビームの径路を横切る四重極磁界を発生し、かつ前記電極の中で互いに対向する第1電極対が、正電位または負電位の第1電位にあり、他方の互いに対向する第2電極対が、アース電位または正電位に接続された低抵抗径路を通じて第2電位にバイアスされた変動電位電極であるユニポーラ型の静電四重極レンズと、前記第2電極対と電源との間に接続され、前記第2電極対を前記第2電位に制御可能なスイッチング回路とを含むことを特徴としている。
さらに、本発明のリニア加速システムは、リニア加速システムの中心軸線に沿って配置された1つ以上の加速ステージと、前記加速ステージと直列に配置され、イオンビームが通る前記中心軸線の回りに等距離に離間した4つの電極を有し、前記イオンビームの径路を横切る四重極磁界を発生し、前記電極の中で互いに対向する第1電極対が、正電位または負電位の第1電位にあり、他方の互いに対向する第2電極対が、アース電位または正電位に接続された低抵抗径路を通じて第2電位にバイアスされた変動電位電極であるユニポーラ型の第1静電四重極レンズと、前記第2電極対と電源との間に接続され、前記第2電極対を前記第2電位に制御可能なスイッチング回路を有することを特徴としている。
別の変形例を含むように拡張できる。さらに、図6〜図7は、単一の負のユニポーラ型静電四重極レンズについて記載されているが、本発明に従って単一の正のユニポーラ型静電四重極レンズに拡張することができる。
Claims (11)
- イオンビームが通る中心軸線の回りに等距離に離間した4つの電極を有し、前記イオンビームの径路を横切る四重極磁界を発生し、かつ前記電極の中で互いに対向する第1電極対が、正電位または負電位の第1電位にあり、他方の互いに対向する第2電極対が、アース電位または正電位に接続された低抵抗径路を通じて第2電位にバイアスされた変動電位電極であるユニポーラ型の静電四重極レンズと、
前記第2電極対と電源との間に接続され、前記第2電極対を前記第2電位に制御可能なスイッチング回路とを含むことを特徴とする静電四重極レンズシステム。 - 第1電位は正電位であり、第2電位はアース電位であることを特徴とする請求項1に記載のレンズシステム。
- 第1電位は負電位であり、第2電位はアース電位または正電位であることを特徴とする請求項1に記載のレンズシステム。
- 前記スイッチング回路は、前記第2電極対に第2電位を与える電源の一部であることを特徴とする請求項1に記載のレンズシステム。
- リニア加速システムの中心軸線に沿って配置された1つ以上の加速ステージと、
前記加速ステージと直列に配置され、イオンビームが通る前記中心軸線の回りに等距離に離間した4つの電極を有し、前記イオンビームの径路を横切る四重極磁界を発生し、前記電極の中で互いに対向する第1電極対が、正電位または負電位の第1電位にあり、他方の互いに対向する第2電極対が、アース電位または正電位に接続された低抵抗径路を通じて第2電位にバイアスされた変動電位電極であるユニポーラ型の第1静電四重極レンズと、
前記第2電極対と電源との間に接続され、前記第2電極対を前記第2電位に制御可能なスイッチング回路を有することを特徴とするリニア加速システム。 - 第2電極対は、アース電位または正電位にバイアスされることを特徴とする請求項5記載のシステム。
- 第1電位は、負電位であることを特徴とする請求項5記載のシステム。
- ユニポーラ型の前記第1静電四重極レンズに直列に配置されたユニポーラ型の第2静電四重極レンズを更に含み、前記第1静電四重極レンズは、第1方向に集束し、前記第2静電四重極は、前記第1方向にほぼ直交する第2方向に集束することを特徴とする請求項5記載のシステム。
- 実質的にビーム電流の損失がないように前記第1静電四重極レンズによって形作られ、かつ、前記中心軸線に沿って進行する低エネルギーのイオンビームを更に含むことを特徴とする請求項5記載のシステム。
- 前記低エネルギーのイオンビームは、約90KeV未満のレベルのエネルギーであることを特徴とする請求項5記載のシステム。
- 前記低エネルギーのイオンビームは、約20KeV未満のレベルのエネルギーであることを特徴とする請求項5記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/654,168 | 2003-09-03 | ||
US10/654,168 US6949895B2 (en) | 2003-09-03 | 2003-09-03 | Unipolar electrostatic quadrupole lens and switching methods for charged beam transport |
PCT/US2004/028656 WO2005024911A2 (en) | 2003-09-03 | 2004-09-02 | Unipolar electrostatic quadrupole lens and switching methods for charged beam transport |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007504622A JP2007504622A (ja) | 2007-03-01 |
JP5013247B2 true JP5013247B2 (ja) | 2012-08-29 |
Family
ID=34218029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006525451A Expired - Fee Related JP5013247B2 (ja) | 2003-09-03 | 2004-09-02 | 静電四重極レンズシステム、及びこれを用いたリニア加速システム |
Country Status (7)
Country | Link |
---|---|
US (1) | US6949895B2 (ja) |
EP (1) | EP1661155A2 (ja) |
JP (1) | JP5013247B2 (ja) |
KR (1) | KR101099943B1 (ja) |
CN (1) | CN1846292B (ja) |
TW (1) | TWI358741B (ja) |
WO (1) | WO2005024911A2 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5100963B2 (ja) * | 2004-11-30 | 2012-12-19 | 株式会社Sen | ビーム照射装置 |
US7402821B2 (en) * | 2006-01-18 | 2008-07-22 | Axcelis Technologies, Inc. | Application of digital frequency and phase synthesis for control of electrode voltage phase in a high-energy ion implantation machine, and a means for accurate calibration of electrode voltage phase |
WO2009039884A1 (en) * | 2007-09-26 | 2009-04-02 | Ion Beam Applications S.A. | Particle beam transport apparatus and method of transporting a particle beam with small beam spot size |
JP5331342B2 (ja) * | 2008-01-11 | 2013-10-30 | 株式会社日立ハイテクノロジーズ | イオンミリング装置 |
CN102099870A (zh) * | 2008-06-11 | 2011-06-15 | 因特瓦克公司 | 用于在太阳能电池制作中使用的专用注入系统和方法 |
EP2409331A4 (en) * | 2009-03-20 | 2017-06-28 | Intevac, Inc. | Advanced high efficiency crystalline solar cell fabrication method |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US20110192993A1 (en) * | 2010-02-09 | 2011-08-11 | Intevac, Inc. | Adjustable shadow mask assembly for use in solar cell fabrications |
JP5602855B2 (ja) * | 2010-07-12 | 2014-10-08 | 三菱電機株式会社 | ドリフトチューブ線形加速器 |
CN102800549B (zh) * | 2011-05-26 | 2015-06-10 | 和舰科技(苏州)有限公司 | 离子植入机及离子植入的方法 |
WO2013002303A1 (ja) * | 2011-06-30 | 2013-01-03 | 株式会社Quan Japan | 荷電粒子加速器および荷電粒子の加速方法 |
WO2013070978A2 (en) | 2011-11-08 | 2013-05-16 | Intevac, Inc. | Substrate processing system and method |
MY178951A (en) | 2012-12-19 | 2020-10-23 | Intevac Inc | Grid for plasma ion implant |
TWI797192B (zh) | 2017-11-15 | 2023-04-01 | 美商康寧公司 | 液體透鏡系統 |
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US11476087B2 (en) * | 2020-08-03 | 2022-10-18 | Applied Materials, Inc. | Ion implantation system and linear accelerator having novel accelerator stage configuration |
US11388810B2 (en) * | 2020-09-17 | 2022-07-12 | Applied Materials, Inc. | System, apparatus and method for multi-frequency resonator operation in linear accelerator |
US11596051B2 (en) * | 2020-12-01 | 2023-02-28 | Applied Materials, Inc. | Resonator, linear accelerator configuration and ion implantation system having toroidal resonator |
US11825590B2 (en) * | 2021-09-13 | 2023-11-21 | Applied Materials, Inc. | Drift tube, apparatus and ion implanter having variable focus electrode in linear accelerator |
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-
2003
- 2003-09-03 US US10/654,168 patent/US6949895B2/en not_active Expired - Lifetime
-
2004
- 2004-09-02 EP EP04783034A patent/EP1661155A2/en not_active Withdrawn
- 2004-09-02 TW TW093126517A patent/TWI358741B/zh not_active IP Right Cessation
- 2004-09-02 KR KR1020067004443A patent/KR101099943B1/ko active IP Right Grant
- 2004-09-02 JP JP2006525451A patent/JP5013247B2/ja not_active Expired - Fee Related
- 2004-09-02 WO PCT/US2004/028656 patent/WO2005024911A2/en active Application Filing
- 2004-09-02 CN CN200480025420XA patent/CN1846292B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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WO2005024911A3 (en) | 2005-07-21 |
JP2007504622A (ja) | 2007-03-01 |
KR101099943B1 (ko) | 2011-12-28 |
US6949895B2 (en) | 2005-09-27 |
CN1846292B (zh) | 2010-11-24 |
KR20060123082A (ko) | 2006-12-01 |
TWI358741B (en) | 2012-02-21 |
US20050045835A1 (en) | 2005-03-03 |
CN1846292A (zh) | 2006-10-11 |
EP1661155A2 (en) | 2006-05-31 |
TW200531133A (en) | 2005-09-16 |
WO2005024911A2 (en) | 2005-03-17 |
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