JP5004430B2 - 発光装置の製造方法 - Google Patents

発光装置の製造方法 Download PDF

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Publication number
JP5004430B2
JP5004430B2 JP2005081271A JP2005081271A JP5004430B2 JP 5004430 B2 JP5004430 B2 JP 5004430B2 JP 2005081271 A JP2005081271 A JP 2005081271A JP 2005081271 A JP2005081271 A JP 2005081271A JP 5004430 B2 JP5004430 B2 JP 5004430B2
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Japan
Prior art keywords
layer
light
semiconductor layer
light emitting
transistor
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Expired - Fee Related
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JP2005081271A
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English (en)
Japanese (ja)
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JP2005311328A5 (enExample
JP2005311328A (ja
Inventor
智史 村上
真之 坂倉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005081271A priority Critical patent/JP5004430B2/ja
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    • Y02B20/341

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2005081271A 2004-03-25 2005-03-22 発光装置の製造方法 Expired - Fee Related JP5004430B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005081271A JP5004430B2 (ja) 2004-03-25 2005-03-22 発光装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004089213 2004-03-25
JP2004089213 2004-03-25
JP2005081271A JP5004430B2 (ja) 2004-03-25 2005-03-22 発光装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012088650A Division JP5244994B2 (ja) 2004-03-25 2012-04-09 発光装置の製造方法

Publications (3)

Publication Number Publication Date
JP2005311328A JP2005311328A (ja) 2005-11-04
JP2005311328A5 JP2005311328A5 (enExample) 2008-05-01
JP5004430B2 true JP5004430B2 (ja) 2012-08-22

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ID=35439676

Family Applications (1)

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JP2005081271A Expired - Fee Related JP5004430B2 (ja) 2004-03-25 2005-03-22 発光装置の製造方法

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JP (1) JP5004430B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI291310B (en) * 2005-12-01 2007-12-11 Au Optronics Corp Organic light emitting diode (OLED) display panel and method of forming polysilicon channel layer thereof
JP4752818B2 (ja) 2007-07-06 2011-08-17 ソニー株式会社 有機el表示装置、電子機器、有機el表示装置用の基板および有機el表示装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1168110A (ja) * 1997-08-13 1999-03-09 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2000349301A (ja) * 1999-04-01 2000-12-15 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3799915B2 (ja) * 1999-12-08 2006-07-19 セイコーエプソン株式会社 電気光学装置の製造方法並びに半導体基板及び電気光学装置
JP2002072232A (ja) * 2000-08-24 2002-03-12 Sharp Corp 液晶表示装置、及び、当該液晶表示装置の製造方法

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Publication number Publication date
JP2005311328A (ja) 2005-11-04

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