JP5001862B2 - マイクロ波プラズマ処理装置 - Google Patents
マイクロ波プラズマ処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 117
- 239000000758 substrate Substances 0.000 claims description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 47
- 230000003746 surface roughness Effects 0.000 claims description 33
- 239000007789 gas Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 30
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- 239000004065 semiconductor Substances 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 8
- 238000005498 polishing Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
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- 230000015572 biosynthetic process Effects 0.000 description 5
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- 238000005121 nitriding Methods 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 238000010306 acid treatment Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004439 roughness measurement Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
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- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
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- 238000005219 brazing Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000007524 flame polishing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
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Description
− 石英ガラス板を所定形状に数値制御(NC)加工する工程S1;
− NC加工され石英ガラス板の表面をサンドブラスト処理して所定厚さまで厚さを低減する工程S2;
− サンドブラスト処理された石英ガラス板の表面にスラリ研磨加工を行う工程S3;
− スラリ研磨加工した石英ガラス表面にフッ酸処理を行う工程S4;
− フッ酸処理した石英ガラス板表面に脱脂処理を行う工程S5;
− 脱脂処理した石英ガラス板表面を純水洗浄する工程S6;
− 純水洗浄した石英ガラス板表面にフッ酸処理を行う工程S7;および
− フッ酸処理した石英ガラス板表面を純水洗浄する工程S8;
を順次行うことにより製造される。
[メカニカルポリッシュ(機械研磨)を用いる場合]
上記の工程S3と工程S4との間に、酸化カリウム粒子の研磨剤を用いたポリッシュ処理を行い、これにより表面粗さを大幅に改善する。他の工程については図6と実質的に同じでよい。
[ファイヤポリッシュ(火炎研磨)を用いる場合]
上記の工程S1の後に、フッ酸処理工程、脱脂処理工程、純水洗浄工程(上記の工程S3,S4,S5と同じ)を行い、更に乾燥処理を行う。その後、ファイヤポリッシュ処理を行う。次いで、歪み取りのために1000℃で1時間アニール処理を行う。その後、上記のフッ酸処理工程、純水洗浄工程を(上記の工程S7,S8と同じ)行う。
Claims (14)
- 真空引き可能に構成されるとともにその内部に基板を保持する基板載置台が配置された処理容器と、
前記処理容器の上部に、前記基板載置台上の基板に対面するように設けられた、石英ガラスからなる天板と、
前記天板の上方に設けられたアンテナと、
前記処理容器内に処理ガスを供給するガスインジェクタと、を備えたプラズマ処理装置であって、
前記天板の前記基板に対面する面にファイアポリッシュが施されており、当該面が算術平均粗さRaで0.2μm以下の表面粗さを有することを特徴とするプラズマ処理装置。 - 前記アンテナはマイクロ波アンテナであることを特徴とする請求項1に記載のプラズマ処理装置。
- 前記天板の前記基板に対面する面が、算術平均粗さRaで0.13μm以下の表面粗さを有することを特徴とする請求項1または2に記載のプラズマ処理装置。
- 前記天板の前記基板に対面する面が、算術平均粗さRaで0.1μm以下の表面粗さを有することを特徴とする請求項1または2に記載のプラズマ処理装置。
- 真空引き可能に構成されるとともにその内部に基板を保持する基板載置台が配置された処理容器と、
前記処理容器の上部に、前記基板載置台上の基板に対面するように設けられた、石英ガラスからなる天板と、
前記天板の上方に設けられたアンテナと、
前記処理容器内に処理ガスを供給するガスインジェクタと、を備えたプラズマ処理装置であって、
前記天板の前記基板に対面する面に円形の凹部が形成され、前記凹部の底面が算術平均粗さRaで0.2μm以下の表面粗さを有することを特徴とするプラズマ処理装置。 - 前記アンテナはマイクロ波アンテナであることを特徴とする請求項5に記載のプラズマ処理装置。
- 前記天板の前記基板に対面する面にファイアポリッシュが施されていることを特徴とする請求項5または6に記載のプラズマ処理装置。
- 処理容器内にプラズマを生成するために、前記処理容器内に向けて高周波を透過させるための石英ガラスからなる天板であって、
前記処理容器に装着された場合に前記処理容器の内部空間に露出する前記天板の面にファイアポリッシュが施されており、当該面が算術平均粗さRaで0.2μm以下の表面粗さを有することを特徴とする天板。 - 前記高周波がマイクロ波であることを特徴とする請求項8に記載の天板。
- 前記天板の前記表面粗さが算術平均粗さRaで0.13μm以下であることを特徴とする請求項8または9に記載の天板。
- 前記天板の前記表面粗さが算術平均粗さRaで0.1μm以下であることを特徴とする請求項8または9に記載の天板。
- 処理容器内にプラズマを生成するために、前記処理容器内に向けて高周波を透過させるための石英ガラスからなる天板であって、
前記処理容器に装着された場合に前記処理容器の内部空間に露出する前記天板の面に円形の凹部が形成され、前記凹部の底面が算術平均粗さRaで0.2μm以下の表面粗さを有することを特徴とする天板。 - 前記高周波がマイクロ波であることを特徴とする請求項12に記載の天板。
- 前記処理容器に装着された場合に前記処理容器の内部空間に露出する前記天板の面にファイアポリッシュが施されていることを特徴とする請求項12または13に記載の天板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007556896A JP5001862B2 (ja) | 2006-01-31 | 2007-01-31 | マイクロ波プラズマ処理装置 |
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Application Number | Priority Date | Filing Date | Title |
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JP2006023282 | 2006-01-31 | ||
JP2006023282 | 2006-01-31 | ||
JP2007556896A JP5001862B2 (ja) | 2006-01-31 | 2007-01-31 | マイクロ波プラズマ処理装置 |
PCT/JP2007/051624 WO2007088904A1 (ja) | 2006-01-31 | 2007-01-31 | マイクロ波プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
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JPWO2007088904A1 JPWO2007088904A1 (ja) | 2009-06-25 |
JP5001862B2 true JP5001862B2 (ja) | 2012-08-15 |
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JP2007556896A Active JP5001862B2 (ja) | 2006-01-31 | 2007-01-31 | マイクロ波プラズマ処理装置 |
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US (1) | US20100175621A1 (ja) |
JP (1) | JP5001862B2 (ja) |
KR (1) | KR100997839B1 (ja) |
CN (1) | CN101213643A (ja) |
WO (1) | WO2007088904A1 (ja) |
Families Citing this family (6)
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JP4524354B2 (ja) * | 2008-02-28 | 2010-08-18 | 国立大学法人東北大学 | マイクロ波プラズマ処理装置、それに用いる誘電体窓部材および誘電体窓部材の製造方法 |
FR2992313B1 (fr) * | 2012-06-21 | 2014-11-07 | Eurokera | Article vitroceramique et procede de fabrication |
US9711334B2 (en) * | 2013-07-19 | 2017-07-18 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based thin film coatings on process rings |
US9583369B2 (en) | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
US9725799B2 (en) | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
JP6163442B2 (ja) * | 2014-03-05 | 2017-07-12 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
Citations (4)
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JPH10163180A (ja) * | 1996-10-02 | 1998-06-19 | Matsushita Electron Corp | 電子デバイスの製造装置及び電子デバイスの製造方法 |
JPH10214823A (ja) * | 1997-01-31 | 1998-08-11 | Sumitomo Metal Ind Ltd | プラズマ処理装置 |
JP2003168681A (ja) * | 2001-12-03 | 2003-06-13 | Ulvac Japan Ltd | マイクロ波プラズマ処理装置および処理方法 |
JP2003174017A (ja) * | 2001-09-25 | 2003-06-20 | Tokyo Electron Ltd | プラズマ処理装置用石英部材の加工方法,プラズマ処理装置用石英部材およびプラズマ処理装置用石英部材が実装されたプラズマ処理装置 |
Family Cites Families (8)
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US6091045A (en) * | 1996-03-28 | 2000-07-18 | Sumitomo Metal Industries, Inc. | Plasma processing apparatus utilizing a microwave window having a thinner inner area |
US6007673A (en) * | 1996-10-02 | 1999-12-28 | Matsushita Electronics Corporation | Apparatus and method of producing an electronic device |
JP3488383B2 (ja) * | 1998-05-29 | 2004-01-19 | 信越石英株式会社 | ドライエッチング用石英ガラス部材およびそれを装着したドライエッチング装置 |
US6060117A (en) * | 1998-08-31 | 2000-05-09 | Ford Global Technologies, Inc. | Making and using thermal spray masks carrying thermoset epoxy coating |
JP4890668B2 (ja) * | 1999-07-13 | 2012-03-07 | 株式会社山形信越石英 | 半導体熱処理用反応装置の石英ガラス製蓋体およびその製造方法 |
DE60128302T2 (de) * | 2000-08-29 | 2008-01-24 | Heraeus Quarzglas Gmbh & Co. Kg | Plasmafeste Quartzglas-Haltevorrichtung |
JP4148650B2 (ja) * | 2001-01-16 | 2008-09-10 | 信越石英株式会社 | 石英ガラスの製造方法 |
JP3723783B2 (ja) * | 2002-06-06 | 2005-12-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2007
- 2007-01-31 KR KR1020077030752A patent/KR100997839B1/ko active IP Right Grant
- 2007-01-31 WO PCT/JP2007/051624 patent/WO2007088904A1/ja active Application Filing
- 2007-01-31 US US12/223,253 patent/US20100175621A1/en not_active Abandoned
- 2007-01-31 JP JP2007556896A patent/JP5001862B2/ja active Active
- 2007-01-31 CN CNA2007800000476A patent/CN101213643A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10163180A (ja) * | 1996-10-02 | 1998-06-19 | Matsushita Electron Corp | 電子デバイスの製造装置及び電子デバイスの製造方法 |
JPH10214823A (ja) * | 1997-01-31 | 1998-08-11 | Sumitomo Metal Ind Ltd | プラズマ処理装置 |
JP2003174017A (ja) * | 2001-09-25 | 2003-06-20 | Tokyo Electron Ltd | プラズマ処理装置用石英部材の加工方法,プラズマ処理装置用石英部材およびプラズマ処理装置用石英部材が実装されたプラズマ処理装置 |
JP2003168681A (ja) * | 2001-12-03 | 2003-06-13 | Ulvac Japan Ltd | マイクロ波プラズマ処理装置および処理方法 |
Also Published As
Publication number | Publication date |
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WO2007088904A1 (ja) | 2007-08-09 |
JPWO2007088904A1 (ja) | 2009-06-25 |
KR100997839B1 (ko) | 2010-12-01 |
CN101213643A (zh) | 2008-07-02 |
KR20080022137A (ko) | 2008-03-10 |
US20100175621A1 (en) | 2010-07-15 |
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