JP4998578B2 - Plating apparatus, plating method and chip type electronic component manufacturing method - Google Patents

Description

  The present invention relates to a plating apparatus, a plating method, and a chip-type electronic component manufacturing method.

  For example, in order to form a uniform plating layer on a small component such as a chip-type electronic component, a barrel plating apparatus has been conventionally used (see Patent Document 1).

  However, in the conventional barrel plating apparatus, since a large number of plating objects overlap in a random manner inside a rotating barrel, adhesion between the plating objects, bubbles in the plating solution adhere to the plating object, and the like. There is a problem. When adhesion between objects to be plated or adhesion of bubbles to objects to be plated occurs, a plating film is not formed on that part, making it difficult to form a plating film with uniform quality and uniform thickness. Become.

  Further, in the conventional barrel plating apparatus and plating method, since the power lines from the anode electrode to the cathode electrode in the plating solution are long, the power lines are likely to be concentrated, which causes variations in the plating film thickness.

JP 2005-36249 A

  The present invention has been made in view of such a situation, and an object thereof is to provide a plating apparatus, a plating method, and a chip-type electronic component manufacturing method capable of obtaining a plating film having a high quality and a uniform thickness. It is.

In order to achieve the above object, a plating apparatus according to the present invention comprises:
A generating means for generating a flow of plating solution inside the plating tank,
Guiding means for defining the flow direction of the plating solution;
An anode electrode disposed in the middle of the flow of the plating solution;
A dwelling device that is disposed in the middle of the flow of the plating solution and temporarily retains the plating object flowing along with the plating solution,
At least a part of the staying means is constituted by a cathode electrode.

The plating method according to the present invention generates a flow of a plating solution that passes near the anode electrode inside the plating tank,
The plating object flowing along with the plating solution is temporarily retained by a retention means at least partly composed of a cathode electrode.

A method for manufacturing a chip-type electronic component according to the present invention includes a step of manufacturing an element body,
Forming a base electrode layer on the element body;
A method of manufacturing a chip-type electronic component having a step of forming a plating film on the surface of the base electrode layer,
Forming the plating film comprises:
Generate a flow of plating solution that passes near the anode electrode inside the plating tank,
The element main body flowing together with the plating solution is temporarily retained by a retention means at least partly composed of a cathode electrode.

  In the plating apparatus, the plating method, and the chip type electronic component manufacturing method according to the present invention, the plating object (including the element main body) is first generated by the generating means and flows into the plating solution flow (jet) defined by the guiding means. Riding and flowing to the vicinity of the anode electrode arranged in the middle of the jet, the plating objects are separated. And it retains temporarily on the staying means arrange | positioned in the middle of a jet flow in the state where each plating object is close to individual. At this time, the plating object rolls the portion where the cathode electrode of the staying means is formed due to the influence of the jet and the weight of the plating object. Therefore, it is possible to perform electrolytic plating in a state in which the separated plating objects are close to each other. Each plating object is electroplated while in contact with the cathode electrode. Further, the plating object does not remain at the same location on the staying means due to the jet flow and the weight of the plating object. The plating object eventually falls from the staying means and moves on the jet again. Therefore, it is possible to form a plating film with a uniform film thickness on the object to be plated.

  Conventionally, when electrolytic plating is performed on the cathode electrode, bubbles are generated, and an object to be plated may be taken into the bubbles. However, in the present invention, when the plating object taken in the bubbles is caused to flow into a direct jet by the generating means, the bubbles are completely separated from the plating object by the momentum of the jet. The plating object separated from the bubbles is again subjected to electrolytic plating with the cathode electrode formed in the staying means. Therefore, electrolytic plating can be reliably performed on the plating object without separating the plating object from the plating solution, and the plating quality of the plating object can be improved.

  Preferably, the staying means is a planar member having an inner peripheral end and an outer peripheral end, and the planar member has a staying surface connecting the inner peripheral end and the outer peripheral end. Preferably, at least a portion of the planar member that contacts the object to be plated is formed of a cathode electrode.

  Since the surface area of the staying surface formed on the planar member is wide and a portion that contacts the plating object can be secured widely, if the cathode electrode is formed on the portion of the planar member that contacts the plating object, In addition, it is possible to reliably perform electrolytic plating in a state in which discrete plating objects are close to each other.

  Preferably, the guide means is a guide member for guiding the flow of the plating solution generated by the generating means upward in the vertical direction inside the plating tank together with the plating object. Preferably, the guide member is a cylindrical guide tube, and the plating solution and the plating object are formed so as to be guided inside the guide tube. In this case, it is preferable that the inner peripheral end of the planar member is in contact with the outer periphery of the guide member. The guide means may be a guide member that guides the flow of the plating solution generated by the generating means, along with the plating object, vertically upward along the inner wall of the plating tank.

  The plating objects can be appropriately dispersed by the direct jet (upward jet) generated by the generating means, and the planar objects are in contact with the plating object in a properly dispersed state. Furthermore, even if the gas generated when electrolytic plating is performed on the cathode electrode has taken in the plating object, the plating object and the gas can be separated by the upward jet.

  Preferably, the stay surface is inclined from the upper side in the vertical direction toward the lower side in the vertical direction. Since the staying surface is inclined, the plating object that has reached the staying surface by riding on the jet is likely to roll by its own weight along the staying surface. Therefore, it is possible to form a plating film with a more uniform film thickness on the plating object without the plating object remaining on the same portion of the staying surface.

  Preferably, a plurality of dropping holes through which the plating object falls from the planar member are formed on the staying surface. By forming a drop hole on the staying surface, it is possible to reliably drop the plating object by its own weight after electrolytic plating has been performed for the distance from the position where the plating object has reached the staying surface to the drop hole. it can. Therefore, the plating object does not remain on the staying surface.

  The opening area of the drop hole may be larger as it is located on the lower side in the vertical direction of the planar member. In order to change the opening area of the drop hole, the hole diameter of the drop hole may be increased as it is located on the lower side in the vertical direction of the planar member, or the drop hole may be located on the lower side of the planar member in the vertical direction. The density of may be increased.

  Thereby, even if the plating object does not fall from the drop hole on the upper side in the vertical direction, the probability that the plating object falls from the drop hole located in the lower part in the vertical direction increases. Further, when the inner peripheral end of the planar member on which the plating object has been rolled is in contact with the outer periphery of the guide member, the opening area of the drop hole is larger as it is located on the lower side in the vertical direction of the planar member. It is preferable. In this case, the object to be plated can be reliably dropped by the drop holes formed along the inner peripheral edge. Therefore, the plating object does not remain on the staying surface.

  Preferably, a plurality of the planar members are formed in the vertical direction, and have a first plate located on the upper side in the vertical direction and a second plate located on the lower side in the vertical direction.

  By arrange | positioning the several planar member, the opportunity for a plating target object to contact a stay surface increases, and it can improve plating efficiency.

  Preferably, the staying surface of the first plate and the staying surface of the second plate are parallel to each other, and the inner peripheral end of the first plate and the inner peripheral end of the second plate are It is located on the lower side in the vertical direction.

  Alternatively, the first inner peripheral end of the first plate is positioned vertically lower than the first outer peripheral end of the first plate, and the second inner peripheral end of the second plate is The first inner peripheral end and the second inner peripheral end may be in contact with each other, being positioned vertically above the second outer peripheral end.

  In this case, the plating object that did not fall on the retention surface of the first plate starts to roll from the second inner peripheral end of the second plate. Therefore, a long rolling distance of the plating object can be ensured, and the plating efficiency can be further increased.

  Preferably, the anode electrode is disposed near the stay surface and substantially parallel to the stay surface. Since the distance between the stay surface on which the cathode electrode is formed and the anode electrode is short, power lines are less likely to concentrate, the current density becomes uniform, and the plating component can be uniformly deposited on the surface of the plating object at the cathode electrode. And variations in the plating film thickness can be reduced. In addition, since the power line from the anode electrode to the cathode electrode can be shortened, the plating efficiency can be improved as compared with the amount of power.

  Preferably, the plating apparatus has vibration means for vibrating at least the staying means. Even if there is an object to be plated that does not fall from the staying surface, the object to be plated can be reliably dropped by vibrating at least the staying surface.

  The planar member may be formed by combining a plurality of fine lines. For example, the planar member may be formed of a mesh.

  The generating means may be a stirring means provided separately from the supplying means for introducing a fresh plating solution into the plating tank, but may also serve as the supplying means.

FIG. 1 is a schematic external view of a plating apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of a chip-type electronic component processed by the plating method according to one embodiment of the present invention. FIG. 3 is a cross-sectional view of the plating apparatus shown in FIG. FIG. 4 is a plan view of the first plate shown in FIG. FIG. 5 is a cross-sectional view of a main part showing details of a V portion shown in FIG. FIG. 6 is a cross-sectional view of a main part of a plating apparatus according to another embodiment. FIG. 7A is a schematic cross-sectional view showing an example of a combination of plate shape and position. FIG. 7B is a schematic cross-sectional view showing an example of a combination of plate shape and position. FIG. 7C is a schematic cross-sectional view showing a combination example of the shape and position of the plate. FIG. 7D is a schematic cross-sectional view showing an example of a combination of plate shape and position. FIG. 7E is a schematic cross-sectional view showing a combination example of the shape and position of the plate. FIG. 7F is a schematic cross-sectional view showing a combination example of the shape and position of the plate. FIG. 7G is a schematic cross-sectional view showing an example of a combination of plate shape and position. FIG. 7H is a schematic cross-sectional view showing a combination example of the shape and position of the plate. FIG. 7I is a schematic cross-sectional view showing an example of a combination of plate shape and position. FIG. 7J is a schematic cross-sectional view showing a combination example of the shape and position of the plate. FIG. 7K is a schematic cross-sectional view showing an example of a combination of plate shape and position. FIG. 7L is a schematic cross-sectional view showing a combination example of the shape and position of the plate. 8A and 8B are schematic cross-sectional views showing examples of combinations of the shapes of the guide cylinders. 9A and 9B are plan views showing modifications of the plate. FIG. 10 is an enlarged view of a main part showing a modified example of the plate. FIG. 11 is a cross-sectional view of a plating apparatus according to another embodiment of the present invention.

Hereinafter, the present invention will be described based on embodiments shown in the drawings.
First embodiment
(Multilayer chip capacitors as plating objects)

  First, the multilayer chip capacitor 2 shown in FIG. 2 as a chip-type electronic component plated using the plating apparatus 20 shown in FIG. 1 according to an embodiment of the present invention will be described. As shown in FIG. 2, the multilayer chip capacitor 2 has an element body 10 having a configuration in which internal electrode layers 4 and 6 and a dielectric layer 8 are laminated. A pair of external terminal electrodes 12 and 14 are formed on both end portions 11 and 13 of the element body 10 to be electrically connected to the internal electrode layers 4 and 6 disposed inside the element body 10.

  The internal electrode layers 4 and 6 are laminated such that each end face is exposed on the surface of the opposite end portions 11 and 13 of the element body 10. The pair of external terminal electrodes 12 and 14 are formed at both ends of the element body 10 and connected to the exposed end surfaces of the internal electrode layers 4 and 6 to form a capacitor circuit.

  The dielectric layer 8 is not particularly limited as long as it is a dielectric material. For example, the dielectric layer 8 is made of a dielectric material mainly composed of barium titanate, calcium titanate, strontium titanate, or a composite oxide thereof. This dielectric material may contain subcomponents such as silicon oxide, rare earth oxide, manganese oxide, magnesium oxide, vanadium oxide, aluminum oxide, and chromium oxide.

  The multilayer chip component as the plating object according to the present invention is not limited to the chip capacitor 2 and may be, for example, a chip varistor, a chip inductor, or a chip thermistor. In this case, the dielectric layer 8 is made of a varistor material. A layer, an inductor material layer, an NTC thermistor material layer, or the like may be used.

  The internal electrode layers 4 and 6 are configured to include a conductive material. The conductive material contained in the internal electrode layers 4 and 6 is not particularly limited. However, when used as the capacitor 2, nickel or a nickel alloy is preferable. The thickness of the internal electrode layers 4 and 6 may be appropriately determined according to the use, but is usually about 0.2 to 5 μm.

  The external terminal electrodes 12 and 14 are also configured to include a conductive material. Although it does not specifically limit as a electrically conductive material contained in the external terminal electrodes 12 and 14, Usually, copper, copper alloy, nickel, nickel alloy, etc. are used, However, Silver, the alloy of silver and palladium, etc. can also be used. . In the present embodiment, plated films 12c and 14c made of Ni and Sn films are formed by electroplating on the surfaces of the base electrode layers 12p and 14p made of paste electrode films. The thicknesses of the base electrode layers 12p and 14p may be appropriately determined according to the use, but are usually about 5 to 50 μm. Moreover, although the thickness of the plating films 12c and 14c may be appropriately determined according to the use, it is usually about 3 to 10 μm.

  The shape of the element body 10 is not particularly limited, but is usually a rectangular parallelepiped shape. Further, the dimensions are not particularly limited, and are determined according to the application. In particular, as shown in FIG. 1, the shape is 1005 (length LO = 1.0 mm × width WO = 0.5 mm × thickness HO = 0.5 mm). ) Even if the size is smaller than, for example, 0603 shape (longitudinal LO = 0.6 mm × lateral WO = 0.3 mm × thickness HO = 0.3 mm) which is small and light and the distance between the electrodes is short, the apparatus of this embodiment and The method is applicable.

  As shown in FIG. 2, in the element body 10, outer dielectric layers 18 are disposed at both outer ends in the stacking direction of the internal electrode layers 4, 6 and the dielectric layer 8. Is protecting. The material of the outer dielectric layer 18 may be the same as or different from the material of the dielectric layer 8, but is usually substantially the same as the material of the dielectric layer 8, and is made of a dielectric material. .

  When the plating films 12c and 14c are formed outside the pair of base electrode layers 12p and 14p, the plating film is formed on the outer surface of the outer dielectric layer 18 (surface 10α of the element body 10) during the plating process. It is easy to form a short circuit. Therefore, a protective film 16 such as a glass coat may be formed on the surface 10α, but the protective film 16 is not necessarily formed. When the protective film 16 is formed, the thickness of the protective film 16 is preferably as thin as about 0.05 to 0.2 μm. If the protective film 16 is too thick, the contact between the internal electrode layers 4 and 6 and the base electrode layers 12p and 14p tends to be difficult when the base electrode layers 12p and 14p are formed after the protective film 16 is formed. is there.

The base electrode layers 12p and 14p are formed by an electrode paste baking process. The base electrode paste films 12p and 14p are formed continuously from the end surface portions 12γ and 14γ located on the end surface of the element body 10 and the end surface portions 12γ and 14γ, and extend to the four side surfaces near the end surface of the element body 10. 12β, 14β.
(Manufacturing method of multilayer chip capacitor)

Next, a method for manufacturing the multilayer chip capacitor 2 shown in FIG. 2 will be described.
First, the element body 10 is manufactured. In order to manufacture the element body 10, the dielectric layers 8 and the internal electrode layers 4 and 6 are alternately laminated so that the internal electrode layers 4 and 6 are alternately exposed at both ends by a printing method or a sheet method. The outer dielectric layer 18 is laminated at both ends in the laminating direction to form a laminated body.

  Next, this laminate is cut to obtain a green chip. Next, a binder removal process is performed as necessary, and the green chip is fired to obtain the element body 10. Next, if necessary, the element body 10 is polished to expose the end portions of the internal electrodes on both end faces of the element body. Thereafter, electrode paste for forming the external terminal electrodes 12 and 14 is applied and baked on both ends of the element body 10 to form the base electrode layers 12p and 14p.

  Next, the surfaces of the base electrode layers 12p and 14p are polished by, for example, barrel polishing to expose the conductive particles on the surfaces of the base electrode layers 12p and 14p, and the plating film 12c is formed on the surfaces of the base electrode layers 12p and 14p. , 14c can be easily formed.

  After such polishing, plating films 12c and 14c are formed on the surfaces of the base electrode layers 12p and 14p shown in FIG. 2 by electroplating using the plating apparatus shown in FIG. In this way, the multilayer chip capacitor 2 shown in FIG. 2 is manufactured.

The protective film 16 such as a glass coat shown in FIG. 2 may be formed before the plating treatment or before the formation of the base electrode layers 12p and 14p. Since the protective film 16 is sufficiently thin, it is possible to ensure the connection with the internal electrode layers 4 and 6 when forming the base electrode layers 12p and 14p on the end face of the element body 10.
(Plating equipment)

Next, a plating apparatus for performing the plating process will be described.
As shown in FIG. 1, the plating apparatus 20 has a plating tank 21. As shown in FIG. 3, the plating tank 21 is configured to be able to store the plating solution 30, and at least the inner surface of the plating tank 21 is preferably formed of an insulating material such as a plastic member or a ceramic member. In this embodiment, the upper end in the vertical direction of the plating tank 21 will be described as a sealed type having a gas discharge port 24 that can discharge the gas generated during plating, but the upper part in the vertical direction is an open type, You may be comprised so that gas can be discharged | emitted freely.

  As shown in FIG. 3, the plating tank 21 has an upper casing 21 a and a lower casing 21 b and is connected by a connection portion 21 c so that the plating tank 21 can be divided vertically. The lower casing 21 b is connected to an introduction pipe 23 (supply means) capable of introducing a fresh plating solution 30 into the plating tank 21, and supplies the plating solution 30 into the plating tank 21. The plating solution 30 can be discharged from the plating tank 21 through the discharge pipe 25 connected to the lower casing 21b. Although the supply of the plating solution into the plating tank 21 may be performed batchwise, it is preferably performed continuously during the plating process. Further, the plating solution 30 discharged from the discharge pipe 25 may be filtered through a filter and recirculated.

  A support base 22 is fixed to the lowermost portion of the lower casing 21b in the vertical direction. An accommodation recess 22a is formed in the support base 22, and a stirring blade 26 (generation means) is rotatably accommodated in the accommodation recess 22a by a motor or the like (not shown). A partition net 27 is disposed above the stirring blade 26 in the vertical direction to prevent the element body 10 (plating target) shown in FIG. 1 from hitting the stirring blade 26.

  A cylindrical pipe 28 (guide means) is arranged on the upper side in the vertical direction of the stirring blade 26 with a gap of a predetermined distance from the partition net 27. The cylindrical pipe 28 has a cylindrical shape as shown in FIG. 1, but is not limited to a cylindrical shape, and may be a polygonal cylindrical shape. The cylindrical pipe 28 is arranged so that the flow (upward jet) of the plating solution 30 generated by the rotation of the stirring blade 26 passes through the inside of the cylindrical pipe 28, and the upward jet can be guided to the vicinity of the anode electrode 29 together with the element body 10. Has been. The cylindrical pipe 28 has an insulating property and is preferably made of an insulating material such as a plastic member or a ceramic member.

  In the present embodiment, the staying means is composed of a first plate 31 and a second plate 32 as shown in FIG. As shown in FIGS. 3 and 4, the first plate 31 is a planar member having a staying surface 31c that connects the first inner peripheral end 31a and the first outer peripheral end 31b. The second plate 32 is also a planar member having a second inner peripheral end 32a and a second outer peripheral end 32b, and has a staying surface 32c that connects the second inner peripheral end 32a and the second outer peripheral end 32b. . As shown in FIG. 3, the staying surface 31 c of the first plate 31 and the staying surface 32 c of the second plate 32 are arranged in parallel to each other.

  As shown in FIG. 3, the stay surface 31 c of the first plate 31 and the stay surface 32 c of the second plate 32 have a conical side surface shape and are inclined at an angle θ with respect to the axis of the cylindrical pipe 28. . Although inclination angle (theta) is not specifically limited, It is preferable that it is 20-160 degree | times. More preferably, the inclination angle θ is 30 to 60 degrees.

  As shown in FIG. 3, the first inner peripheral end 31 a of the first plate 31 and the second inner peripheral end 32 a of the second plate 32 are detachably connected to the outer peripheral wall surface 28 a of the cylindrical pipe 28. The first outer peripheral end 31 b of the first plate 31 and the second outer peripheral end 32 b of the second plate 32 are preferably detachably connected to the inner wall 21 d of the plating tank 21. This is to facilitate maintenance of the plating apparatus 20.

  As shown in FIG. 4, the first plate 31 is configured such that the element body 10 that has been flown by the rising jet flows in contact with the stay surface 31 c in a loose shape and stays on the stay surface 31 c. As shown in FIGS. 3 and 5, a cathode electrode 31 d is formed on at least a portion of the first plate 31 that contacts the element body 10. Further, a cathode electrode 32d is formed at least on the part of the second plate 32 where the element body 10 contacts, and the element body 10 that has fallen from the drop hole 35 of the first plate is retained again. is there. In this embodiment, the 1st plate 31 and the 2nd plate 32 are comprised with electroconductive plates, such as a metal.

  As shown in FIG. 1, the staying surface 31 c of the first plate 31 is formed with a large number of drop holes 35 in a matrix so that the element body 10 can fall from the staying surface 31 c. In the present embodiment, the drop hole 35 is circular. The distances C <b> 1 and C <b> 2 between the outer peripheral ends of the drop holes 35 are preferably 1.5 times or more compared to the vertical size LO of the element body 10. Thereby, a long rolling distance of the element body 10 can be ensured. The diameter D1 of the drop hole 35 is at least larger than the lateral width WO and thickness HO of the element body 10. The diameter D1 of the drop hole 35 may be smaller than the vertical size LO of the element body 10, but may be larger. If the drop hole D1 has a minimum size that allows the element body 10 to drop, a long rolling distance of the element body 10 can be secured.

  Further, as shown in FIG. 4, in the staying surface 31 of the first plate 31, along the outer peripheral wall surface 28a of the cylindrical pipe 28, the final drop hole 31e has an inscribed circle diameter of the element body shown in FIG. It is formed to be larger than the vertical size LO. The shape of the final drop hole 31e is fan-shaped in the present embodiment, but the shape is not particularly limited as long as the element body 10 that has rolled on the stay surface 31c is reliably dropped. Also on the staying surface 32 of the second plate 32, the final drop hole 32e has a diameter of the inscribed circle larger than the vertical size LO of the element body shown in FIG. 1 along the outer peripheral wall surface 28a of the cylindrical pipe 28. It is formed as follows. In the present embodiment, the first plate 31 and the stay surfaces 31c and 32c of the first plate 31 are conical curved surfaces, but may be configured by combining a plurality of flat surfaces.

  As shown in FIG. 3, the rod-shaped anode electrode 29 is disposed near the staying surface 31 c of the first plate 31 and substantially parallel to the staying surface 31 c of the first plate 31. The anode electrode 29 is preferably detachably fixed to the inner wall 21d of the plating tank 21. The anode electrode 29 is made of a material that dissolves into the plating solution 30 and deposits as a plating film, such as Ni. The shape and structure of the anode electrode are not particularly limited.

  The anode electrode 29 is connected to the positive terminal of the power source 33, and the first plate 31 and the second plate 32 are connected to the negative terminal of the power source 33. Furthermore, in the present embodiment, the entire plating tank 21 is connected to the vibrator 34 (vibrating means) and configured to vibrate, but at least the first plate 31 and the second plate 32 are configured to vibrate. It should be.

  In the plating apparatus, plating method, and chip-type electronic component manufacturing method according to this embodiment, first, the element body 10 on which the base electrode layers 12p and 14p shown in FIG. 2 are formed is connected to the upper casing 21a shown in FIG. In a state where the side casing 21b is separated, a large number of pieces are put into the lower casing 21b. The number of element bodies 10 to be input is not particularly limited, and for example, 1000 to 2000000 elements are input. Before and after that, the plating solution 30 is supplied from the supply pipe 23.

  First, the element body 10 rides on the flow (jet flow) of the plating solution generated by the stirring blade 26 and defined by the cylindrical pipe 28 and flows to the vicinity of the anode electrode 29 arranged in the middle of the jet flow. The main bodies 10 are separated. Then, the individual element main bodies 10 are temporarily retained on the first plate 31 and the second plate 32 disposed in the middle of the jet flow in a state close to the individual elements 10. At this time, the element body 10 rolls on the portions where the cathode electrodes 31d and 32d of the first plate 31 and the second plate 32 are formed due to the influence of the jet and the weight of the element body 10. As shown in FIG. 5, when the base electrode layers 12p and 14p formed at both ends of the element body 10 are simultaneously in contact with the cathode electrode 31d, they are electrically connected to the cathode electrode 31d in the presence of the plating solution 30. Is done. Therefore, it is possible to perform electroplating in a state in which the separated element bodies 10 are close to each other. Further, the element body 10 does not continue to stay at the same place on the staying means due to the jet flow and the weight of the element body 10. The element body 10 eventually falls from the first plate and the second plate, and moves on the jet again. Therefore, it is possible to form a plating film with a uniform film thickness on the element body 10.

  Conventionally, when electrolytic plating is performed on the cathode electrodes 31d and 32d, bubbles are generated, and the element body 10 may be taken into the bubbles. However, in the present embodiment, when the element main body 10 taken into the bubbles is caused to flow into a direct jet flow by the stirring blade 26, the bubbles are completely separated from the element main body 10 by the momentum of the jet flow. The element body 10 separated from the bubbles is again subjected to electroplating with the cathode electrodes 31 d and 32 d formed on the first plate 31 and the second plate 32. Therefore, the element body 10 can be reliably electroplated on the base electrode layers 12p, 14p of the element body 10 without being separated from the plating solution 30, and formed on the base electrode layers 12p, 14p of the element body 10. The plating quality of the plating film can be improved.

  The surface areas of the staying surfaces 31c and 32c formed on the first plate 31 and the second plate 32 are large, and a portion in contact with the element body 10 can be secured widely. Since the cathode electrodes 31d and 32d are formed on the portions of the first plate 31 and the second plate 32 that are in contact with the element body 10, it is possible to reliably perform electrolytic plating in the state where the separated element bodies 10 are close to each other. Is possible.

  Further, the element main bodies 10 can be appropriately separated from each other by the direct jet (upward jet) generated by the stirring blades 26, and the element main bodies 10 are appropriately distributed between the first plate 31 and the second plate 32. Touch in a stray state. Further, the gas generated when the electroplating is performed on the cathode electrodes 31 d and 32 d is separated from the element body 10 by the ascending jet and discharged from the gas discharge port 24.

  In addition, since the stay surfaces 31c and 32c of the first plate 31 and the second plate 32 are inclined, the element body 10 that has reached the stay surfaces 31c and 32c by riding the jet flows along the stay surfaces 31c and 32c. , Easy to roll with its own weight. Therefore, it is possible to form a plating film with a more uniform film thickness on the element main body 10 without the element main body 10 continuing to stay on the same portion of the stay surfaces 31c and 32c.

  In the present embodiment, since the drop holes 35 are formed in the stay surfaces 31c and 32c, after the electroplating is performed by the distance from the position where the element body 10 reaches the stay surfaces 31c and 32c to the drop hole 35, the electrolytic plating is performed. The element body 10 can be reliably dropped by its own weight. Therefore, the element body 10 does not continue to stay on the stay surfaces 31c and 32c.

  Further, in this embodiment, even if the element body 10 does not fall from the drop hole 35 on the upper side in the vertical direction, the element body 10 falls from the drop hole 35 positioned at the lower part in the vertical direction. In the present embodiment, the element main body 10 can be reliably dropped by the final drop hole 31 e formed along the outer peripheral wall surface 28 a of the cylindrical pipe 28. Therefore, the element body 10 does not remain on the staying surface.

  In addition, since the plurality of plates (the first plate 31 and the second plate 32) are arranged, the opportunity for the element body 10 to contact the stay surfaces 31c and 32c is increased, and the plating efficiency can be increased.

  In the present embodiment, since the distance between the stay surface 31c on which the cathode electrode 31d of the first plate 31 is formed and the anode electrode 29 is short, power lines are less likely to concentrate, the current density becomes uniform, and the element at the cathode electrode 31d is uniform. Plating components can be uniformly deposited on the surface of the main body 10, and variations in the plating film thickness can be reduced. In addition, since the power line from the anode electrode 29 to the cathode electrode 31d can be shortened, the plating efficiency can be improved compared to the amount of power.

  In the present embodiment, since the plating apparatus 20 includes the vibrator 34 that vibrates at least the first plate 31 and the second plate 32, there is an element body 10 that remains without falling from the stay surfaces 31 c and 32 c. Even so, the element main body 10 can be reliably dropped by vibrating the stay surfaces 31c and 32c. After the plating process, the first blade 31 and the second plate 32 are vibrated even when the rotation of the stirring blade 26 is stopped and the rising jet stops, and the element is placed on the bottom of the plating tank 21 shown in FIG. By collecting the main body 10, only the element main body 10 on which the plating film is formed can be left.

  In addition, it is not limited to embodiment mentioned above, The plating apparatus 20 may be comprised as described below.

  For example, the opening area of the drop hole 35a of the plate 31i on which the cathode electrode is formed may be so large that it is located on the lower side in the vertical direction of the plate 31i. For example, as shown in FIG. 6, the hole diameter of the drop hole 35a may be increased as it is located on the lower side in the vertical direction of the plate 31i. That is, the hole diameter D3 of the drop hole 35a located on the lower side in the vertical direction may be larger than the hole diameter D2 of the drop hole 35a located on the upper side in the vertical direction. Alternatively, although not shown, the number of drop holes formed (unit density) per unit area in the plate on which the cathode electrode is formed may be increased.

  As shown in FIG. 7A, the first plate 31 and the second plate 32 may be shifted upward in the vertical direction of the cylindrical pipe 28.

  7B, preferably, the first inner peripheral end 31a of the first plate 31 is positioned below the first outer peripheral end 31b of the first plate 31 in the vertical direction, and the second plate 32 The second inner peripheral end 32a is positioned above the second outer peripheral end 32b of the second plate 32 in the vertical direction, and the first inner peripheral end 31a and the second inner peripheral end 32a are in contact with each other. In this case, the element body 10 that has not dropped on the first staying surface 31 c of the first plate 31 starts rolling on the second staying surface 32 c from the second inner peripheral end 32 a of the second plate 32. Therefore, a long rolling distance of the element body 10 can be ensured, and the plating efficiency can be further increased.

  Further, as shown in FIG. 7C, only the second plate 32 may be arranged parallel to the horizontal direction. Alternatively, as shown in FIGS. 7D to 7F, the first plate 31 may be arranged in parallel in the horizontal direction. In this case, as shown in FIG. 7D, the second inner peripheral end 32a of the second plate 32 may be positioned lower in the vertical direction than the second outer peripheral end 32b. Further, as shown in FIG. 7E, the second inner peripheral end 32a of the second plate 32 may be positioned higher in the vertical direction than the second outer peripheral end 32b. Furthermore, as shown in FIG. 7F, both the first plate 31 and the second plate 32 may be arranged parallel to the horizontal direction.

  Moreover, as shown in FIGS. 7G to 7I, the first inner peripheral end 31a of the first plate 31 may be positioned above the first outer peripheral end 31b in the vertical direction. In this case, as shown in FIG. 7G, the second inner peripheral end 31a of the second plate 31 may be positioned lower in the vertical direction than the second outer peripheral end 31b. In addition, as shown in FIG. 7H, the second plate 32 may be arranged in parallel to the horizontal direction. As shown in FIG. 7I, the second plate 32 is parallel to the first plate 31. Also good.

  Moreover, as shown to FIG. 7J-FIG. 7L, the planar member may be comprised only with the 1st plate. In this case, as shown in FIG. 7J, the first inner peripheral end 31a of the first plate 31 may be positioned lower in the vertical direction than the first outer peripheral end 31b, or as shown in FIG. 7K. Thus, the 1st plate 31 may be arrange | positioned in parallel with respect to a horizontal direction. Further, as shown in FIG. 7L, the first inner peripheral end 31a of the first plate 31 may be positioned above the first outer peripheral end 31b in the vertical direction.

  In the above-described embodiment, the case where the inner diameter of the cylindrical pipe 28 is equal at the uppermost end in the vertical direction and the lowermost end in the vertical direction of the cylindrical pipe 28 has been described, but the present invention is not limited to this. That is, as shown in FIG. 8A, the inner diameter d1 at the uppermost end in the vertical direction of the cylindrical pipe 28 may be larger than the inner diameter d2 at the lowermost end in the vertical direction of the cylindrical pipe 28. As shown in FIG. 8B, the inner diameter d1 at the uppermost end in the vertical direction of the cylindrical pipe 28 may be smaller than the inner diameter d2 at the lowermost end in the vertical direction of the cylindrical pipe 28.

  Moreover, although embodiment mentioned above demonstrated the case where a planar member was plate shape, it is not limited to this. For example, as shown to FIG. 9A, a planar member may be comprised by arrange | positioning several thin wire | line 36 in parallel. Further, as shown in FIG. 9B, the planar member may have a mesh shape configured by knitting a plurality of thin wires 37.

  In the above-described embodiment, the case where the entire first plate 31 and the second plate 32 are formed of the cathode electrode has been described. However, the present invention is not limited to this. For example, as shown in FIG. 10, the plate 31h includes a resin plate 31f, and the cathode electrode 31g may be formed in a thin film only on the surface of the resin plate 31f (the portion with which the element body 10 is in contact). .

  Moreover, although the generation | occurrence | production means showed the example comprised with the stirring blade 26 provided separately from the introduction pipe 23 which introduce | transduces the fresh plating solution 30 into the plating tank 21, it is not limited to this. For example, the generating means may be constituted by an introduction pipe 23 that introduces a fresh plating solution 30 into the plating tank 21. That is, the introduction pipe 23 may be disposed at the position of the stirring blade 26 and the stirring blade 26 may not be provided.

Further, the drop hole 35 may not be circular, may be elliptical, or may be polygonal.
Second embodiment

Except as described below, the second embodiment is the same as the first embodiment described above, and a duplicate description is omitted.
In this embodiment, as shown in FIG. 11, the guide means guides the flow of the plating solution 30 generated by the stirring blade 26 along with the element body 10 along the inner wall 21 d of the plating tank 21 in the vertical direction. A member 48 is used.

  The lower surface of the guide member 48 has a curved first guide surface 48a, which directly receives the flow of the plating solution 30 generated by the stirring blade 26, along with the element main body 10 along the inner wall 21d of the plating tank 21. Thus, it is configured to guide (upward jet) upward in the vertical direction. The guide surface 48a may be a flat surface.

  Further, on the upper surface of the guide member 48, a second guide surface 48 b is formed that joins the flow (downward jet) of the plating solution 30 that has passed through the first plate 41 and the second plate 42 together with the element body 10 into the upward jet. Has been.

  In the first plate 41 and the second plate 42 of the present embodiment, the inner sides of the first inner peripheral end 42a and the second inner peripheral end 42a are configured by final drop holes 41e and 42e. Although the final drop holes 41e and 42e of this embodiment are circular, the shape is not limited to this.

  In the present embodiment, the element body 10 surely falls from the final drop holes 41e and 42e, so that the plating film can be more uniformly formed on the element body 10.

  The present invention is not limited to the above-described embodiment, and can be variously modified within the scope of the present invention. For example, in the above-described embodiment, the multilayer chip capacitor has been described as an example. However, the present invention is not limited to this, and chip type electronic components to which the plating apparatus and the plating method of the present invention are applied include a chip varistor and a chip inductor. It may be a chip NTC thermistor or the like. The plating object to which the plating apparatus and the plating method of the present invention are applied is not limited to a chip-type electronic component, and examples thereof include powder (5 to 100 μm), connectors, reed switches, nails, bolts, nuts, washers and the like. Such small items (small parts) are exemplified.

2 ... multilayer chip capacitor 10 ... element body 12p, 14p ... base electrode layer 12c, 14c ... plating film 21 ... plating tank 23 ... introduction pipe 26 ... stirring blade 28 ... cylindrical pipe 29 ... anode electrode 30 ... plating solution 31 ... 1 plate 31a ... 1st inner peripheral end 31b ... 1st outer peripheral end 31c ... Residence surface 31d ... Cathode electrode 32 ... 2nd plate 32a ... 2nd inner periphery end 32b ... 2nd outer periphery end 32c ... Retention surface 32d ... Cathode electrode 34 ... Vibrator 35 ... Drop hole 48 ... Guide member

Claims (19)

A generating means for generating a flow of plating solution inside the plating tank,
Guiding means for defining the flow direction of the plating solution;
An anode electrode disposed in the middle of the flow of the plating solution;
A dwelling device that is disposed in the middle of the flow of the plating solution and temporarily retains the plating object flowing along with the plating solution,
A plating apparatus, wherein at least a part of the staying means is constituted by a cathode electrode. The staying means is a planar member having an inner peripheral end and an outer peripheral end,
The plating apparatus according to claim 1, wherein the planar member has a staying surface that connects the inner peripheral end and the outer peripheral end.   The plating apparatus according to claim 2, wherein at least a portion of the planar member that contacts the object to be plated is formed of a cathode electrode.   The plating apparatus according to claim 2, wherein the staying surface is inclined from the upper side in the vertical direction toward the lower side in the vertical direction.   The plating apparatus according to any one of claims 2 to 4, wherein a plurality of dropping holes through which the plating object falls from the planar member are formed on the staying surface.   The plating apparatus according to claim 5, wherein an opening area of the drop hole is larger as it is located on a lower side in a vertical direction of the planar member.   The said planar member is formed in multiple numbers in the perpendicular direction, and has the 1st plate located in the perpendicular direction upper side, and the 2nd plate located in the perpendicular direction lower side, The any one of Claims 2-6 characterized by the above-mentioned. The plating apparatus as described in. The stay surface of the first plate and the stay surface of the second plate are parallel to each other;
The plating apparatus according to claim 7, wherein the inner peripheral end of the first plate and the inner peripheral end of the second plate are located on the lower side in the vertical direction. The first inner peripheral end of the first plate is positioned vertically lower than the first outer peripheral end of the first plate,
The second inner peripheral edge of the second plate is positioned vertically above the second outer peripheral edge of the second plate;
The plating apparatus according to claim 7, wherein the first inner peripheral end and the second inner peripheral end are in contact with each other.   The plating apparatus according to claim 2, wherein the planar member is formed by combining a plurality of thin wires.   The said guide means is a guide member which guides the flow of the said plating solution which generate | occur | produced in the said generation | occurrence | production means to the vertical direction upper direction inside the said plating tank with the said plating target object. The plating apparatus in any one.   The plating apparatus according to claim 11, wherein the guide member is a cylindrical guide cylinder, and the plating solution and the plating target are formed so as to be guided inside the guide cylinder.   The plating apparatus according to claim 12, wherein the inner peripheral end of the planar member is in contact with an outer periphery of the guide member.   The guide means is a guide member that guides the flow of the plating solution generated by the generating means, along with the plating object, vertically upward along the inner wall of the plating tank. The plating apparatus as described in.   The plating apparatus according to claim 2, wherein the anode electrode is disposed in the vicinity of the staying surface and substantially parallel to the staying surface.   The plating apparatus according to claim 1, wherein the generating unit also serves as a supplying unit that introduces a fresh plating solution into the plating tank.   The plating apparatus according to claim 1, further comprising a vibrating unit that vibrates at least the staying unit. Generate a flow of plating solution that passes near the anode electrode inside the plating tank,
A plating method characterized in that a plating object flowing together with the plating solution is temporarily retained by a retention means at least partly composed of a cathode electrode. Manufacturing the element body;
Forming a base electrode layer on the element body;
A method of manufacturing a chip-type electronic component having a step of forming a plating film on the surface of the base electrode layer,
Forming the plating film comprises:
Generate a flow of plating solution that passes near the anode electrode inside the plating tank,
A method of manufacturing a chip-type electronic component, characterized in that the element main body flowing together with the plating solution is temporarily retained by a retention means at least partially comprising a cathode electrode.

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