JP4991950B1 - ミスト成膜装置 - Google Patents
ミスト成膜装置 Download PDFInfo
- Publication number
- JP4991950B1 JP4991950B1 JP2011088960A JP2011088960A JP4991950B1 JP 4991950 B1 JP4991950 B1 JP 4991950B1 JP 2011088960 A JP2011088960 A JP 2011088960A JP 2011088960 A JP2011088960 A JP 2011088960A JP 4991950 B1 JP4991950 B1 JP 4991950B1
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- mist
- film forming
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
Landscapes
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011088960A JP4991950B1 (ja) | 2011-04-13 | 2011-04-13 | ミスト成膜装置 |
PCT/JP2011/069897 WO2012140792A1 (fr) | 2011-04-13 | 2011-09-01 | Appareil de formation de film et procédé de formation de film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011088960A JP4991950B1 (ja) | 2011-04-13 | 2011-04-13 | ミスト成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4991950B1 true JP4991950B1 (ja) | 2012-08-08 |
JP2012219357A JP2012219357A (ja) | 2012-11-12 |
Family
ID=46793851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011088960A Expired - Fee Related JP4991950B1 (ja) | 2011-04-13 | 2011-04-13 | ミスト成膜装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4991950B1 (fr) |
WO (1) | WO2012140792A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112016006798B4 (de) * | 2016-04-26 | 2024-02-22 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Schichtaufbringungsvorrichtung |
CN108699681B (zh) * | 2016-04-26 | 2020-08-25 | 东芝三菱电机产业系统株式会社 | 成膜装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH036013A (ja) * | 1989-06-02 | 1991-01-11 | Nec Kyushu Ltd | 半導体製造装置 |
JPH11340145A (ja) * | 1998-05-25 | 1999-12-10 | Sharp Corp | 基板処理装置 |
-
2011
- 2011-04-13 JP JP2011088960A patent/JP4991950B1/ja not_active Expired - Fee Related
- 2011-09-01 WO PCT/JP2011/069897 patent/WO2012140792A1/fr active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH036013A (ja) * | 1989-06-02 | 1991-01-11 | Nec Kyushu Ltd | 半導体製造装置 |
JPH11340145A (ja) * | 1998-05-25 | 1999-12-10 | Sharp Corp | 基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2012219357A (ja) | 2012-11-12 |
WO2012140792A1 (fr) | 2012-10-18 |
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