JP4985497B2 - Soldering method - Google Patents

Soldering method Download PDF

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JP4985497B2
JP4985497B2 JP2008072207A JP2008072207A JP4985497B2 JP 4985497 B2 JP4985497 B2 JP 4985497B2 JP 2008072207 A JP2008072207 A JP 2008072207A JP 2008072207 A JP2008072207 A JP 2008072207A JP 4985497 B2 JP4985497 B2 JP 4985497B2
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substrate
solder
jig
semiconductor element
positioning
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JP2009231379A (en
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宗彦 増谷
万善 竹内
繁和 東元
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Toyota Industries Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Description

本発明は、半田付け方法に係り、詳しくは基板の両面に電子部品を半田付けする半田付け方法に関する。   The present invention relates to a soldering method, and more particularly to a soldering method for soldering electronic components to both surfaces of a substrate.

電子部品を基板の両面に半田付けする方法として、半田ペーストを用いて面実装回路素子を仮固定して行う方法が提案されている（特許文献１参照）。この方法では、絶縁基板の導体配線の所定位置にクリーム状半田ペーストをスクリーン印刷し、その印刷部に面実装回路素子を搭載した状態で半田ペーストを乾燥し、回路素子の仮固定をした後、基板を反転し、反転前の面と同様な作業を反転後の面で行った後、半田ペースト膜の溶融加熱を二つの面同時に行うことにより、両面同時に半田付けする。   As a method for soldering electronic components to both surfaces of a substrate, a method has been proposed in which a surface mount circuit element is temporarily fixed using a solder paste (see Patent Document 1). In this method, the cream solder paste is screen printed at a predetermined position of the conductor wiring of the insulating substrate, the solder paste is dried in a state where the surface mounting circuit element is mounted on the printed portion, and the circuit element is temporarily fixed. After the substrate is reversed, the same operation as the surface before reversal is performed on the surface after reversal, and then the solder paste film is melted and heated at the same time, thereby simultaneously soldering both surfaces.

また、薄板で剛性が低い回路基板上へ半導体素子を両面重なるように配置して実装する場合に、回路基板の反りを抑制した状態で実装できる半導体実装方法が提案されている（特許文献２参照）。特許文献２の方法では、図５（ａ），（ｂ）に示すように、回路基板４１のＡ面及びＢ面の半導体素子４２を実装する位置に開口部４３を有するプレートＡ１及びプレートＢ２で回路基板４１を挟持した一体構造のプレートを用いる。そして、図５（ａ）に示すように、先ずＡ面に半導体素子４２を実装した後、図５（ｂ）に示すように、回路基板４１を反転させた後、Ｂ面に半導体素子４２を実装する。
特開昭６４−１７４９５号公報 特開２００１−３２６３２２号公報 In addition, a semiconductor mounting method has been proposed that can be mounted in a state in which the warpage of the circuit board is suppressed when the semiconductor elements are mounted so as to be overlapped on both sides on a thin circuit board having low rigidity (see Patent Document 2). ). In the method of Patent Document 2, as shown in FIGS. 5A and 5B, a plate A1 and a plate B2 each having an opening 43 at a position where the semiconductor elements 42 on the A surface and the B surface of the circuit board 41 are mounted. A plate having an integral structure sandwiching the circuit board 41 is used. Then, as shown in FIG. 5A, first, the semiconductor element 42 is mounted on the A surface, and then the circuit board 41 is inverted as shown in FIG. Implement.
JP-A 64-17495 JP 2001-326322 A

特許文献１の方法では乾燥工程が必要になるとともに、基板を反転させる必要もあり、工程が複雑になる。また、半田としてクリーム状半田ペースト以外の半田、例えば、板状あるいはリボン状の半田を所定の大きさに切断加工して使用することができないという問題がある。   In the method of Patent Document 1, a drying process is required and the substrate needs to be inverted, which complicates the process. In addition, there is a problem that solder other than cream-like solder paste, for example, plate-like or ribbon-like solder, cannot be used after being cut into a predetermined size.

一方、特許文献２の方法では乾燥工程は必要なく、半田としてクリーム状半田ペーストに限らず、板状あるいはリボン状の半田も使用することが可能である。しかし、特許文献２の方法では、片面ずつ、２回に分けて半田付けを行う必要があり、また、基板を反転させる工程が必要になる。そのため、後から行う半田付け（２回目の半田付け）で不良部分が発生すると、１回目の半田付けの分も無駄になるという問題がある。また、２回に分けて半田付けを行うと、最初に半田付けされた実装部品は半田の溶融が２回行われることになり、しかも、２回目の半田付けの際、下向きに配置された実装部品の半田が溶けた際に重力の影響を受けて、実装状態に悪影響を及ぼす虞もある。   On the other hand, the method of Patent Document 2 does not require a drying step, and it is possible to use not only cream solder paste but also plate or ribbon solder as the solder. However, in the method disclosed in Patent Document 2, it is necessary to perform soldering in two times for each side, and a step of inverting the substrate is required. For this reason, when a defective portion is generated in the later soldering (second soldering), there is a problem that the first soldering is wasted. In addition, when soldering is performed in two steps, the first soldered mounting part is melted twice, and the mounting is arranged downward in the second soldering. When the solder of the component is melted, it is affected by gravity, which may adversely affect the mounting state.

本発明は、前記従来の問題に鑑みてなされたものであって、その目的は、被半田付け部品の仮固定のための乾燥工程や基板を反転させる工程を設ける必要がなく、使用できる半田がクリーム状半田ペーストに限定されず、両面同時に被半田付け部品を基板に半田付けすることができる半田付け方法を提供することにある。   The present invention has been made in view of the above-mentioned conventional problems, and the purpose thereof is to provide a solder that can be used without providing a drying process for temporarily fixing a part to be soldered or a process for inverting the substrate. The present invention provides a soldering method capable of soldering a part to be soldered to a substrate simultaneously on both sides without being limited to cream solder paste.

前記の目的を達成するため請求項１に記載の発明は、基板の両面に被接合部品を半田を介して接合する半田付け方法である。そして、前記基板の下面とその下面に半田付けされる被接合部品上に配置された半田とが所定間隔離間した状態で前記被接合部品の位置決めを行う基板支持治具により、前記基板の下面を支持するとともに、前記基板の上面にその上面に半田付けされる被接合部品を前記基板との間に半田を配置した状態で位置決め治具により位置決め載置する被接合部品位置決め工程と、前記被接合部品位置決め工程に続いて、前記基板、被接合部品、半田、基板支持治具及び位置決め治具の全体を加熱して半田を溶融させて前記基板の両面同時に被接合部品の半田付けを行う半田付け工程と、を含む。ここで、「所定間隔」とは、半田が溶融したときにその表面張力で盛り上がると、半田が基板に接触するとともに半田が基板に濡れて半田の表面張力によって被接合部品が基板側に移動することが可能な距離を意味する。 In order to achieve the above object, an invention according to claim 1 is a soldering method for joining parts to be joined to both surfaces of a substrate via solder. Then, the lower surface of the substrate is placed on the lower surface of the substrate by a substrate supporting jig that positions the bonded component in a state where the lower surface of the substrate and the solder disposed on the bonded component to be soldered to the lower surface are spaced apart by a predetermined distance. while supporting the object to be bonded component positioning step for positioning placed by the positioning jig in the state in which the solder between the substrate to be bonded components to be soldered on the upper surface on the upper surface of the substrate, wherein the bonded Following the component positioning step, soldering is performed by simultaneously heating the substrate, the component to be bonded, the solder, the substrate support jig, and the positioning jig to melt the solder and simultaneously soldering the components to be bonded on both sides of the substrate. And a process. Here, “predetermined interval” means that when the solder melts and rises due to its surface tension, the solder comes into contact with the substrate and the solder wets the substrate, and the bonded parts move to the substrate side due to the surface tension of the solder. Means the possible distance.

この発明では、基板に半田を介して接合される被接合部品のうち、基板の上面に接合される被接合部品は、基板や半田等が半田の溶融温度以上に加熱されて半田が溶融した後、冷却されると位置決めされた位置に半田付けされる。基板の下面に接合される被接合部品は、半田が溶融してその表面張力で盛り上がり、半田が基板に接触して半田が基板に濡れるとともに半田の表面張力によって被接合部品が基板側に移動する。そして、冷却により半田が凝固する際に、被接合部品は半田の表面張力によって基板側に持ち上げられた状態で基板に半田付けされる。即ち、被半田付け部品の仮固定のための乾燥工程や基板を反転させる工程を設ける必要がなく、使用できる半田がクリーム状半田ペーストに限定されず、両面同時に被半田付け部品を基板に半田付けすることができる。   In this invention, among the components to be bonded to the substrate via solder, the components to be bonded to the upper surface of the substrate are heated after the substrate, solder, etc. are heated above the melting temperature of the solder and the solder is melted. When it is cooled, it is soldered to the positioned position. The part to be joined to the lower surface of the substrate melts and rises due to its surface tension, the solder comes into contact with the substrate, the solder wets the substrate, and the part to be joined moves to the substrate side by the surface tension of the solder. . When the solder is solidified by cooling, the component to be joined is soldered to the substrate while being lifted to the substrate side by the surface tension of the solder. In other words, there is no need to provide a drying process for temporarily fixing the parts to be soldered or a process for inverting the board, and the solder that can be used is not limited to the cream-like solder paste. can do.

請求項２に記載の発明は、請求項１に記載の発明において、前記基板支持治具は、前記基板の下面に半田付けされる被接合部品の半田付けされる面と反対側の面を支持する支持面を備えている。被接合部品が支持台に直接接触した状態に配置された場合は、加熱時に被接合部品の熱が支持台に奪われ易くなる。しかし、この発明では、基板の下面に半田付けされる被接合部品は、基板支持治具の支持面に支持されるため、加熱される際に基板支持部からも熱を受ける状態になり、加熱が効率よく行われる。   According to a second aspect of the present invention, in the first aspect of the present invention, the substrate support jig supports a surface opposite to a surface to be soldered of a component to be bonded that is soldered to a lower surface of the substrate. A supporting surface is provided. When the components to be joined are arranged in direct contact with the support base, the heat of the parts to be joined is easily taken away by the support base during heating. However, in this invention, since the part to be soldered to the lower surface of the substrate is supported by the support surface of the substrate support jig, it is also in a state of receiving heat from the substrate support when heated. Is done efficiently.

請求項３に記載の発明は、請求項１又は請求項２に記載の発明において、前記加熱には誘導加熱が使用される。この発明では、一般の加熱炉で加熱する場合と異なり、加熱すべき箇所を選択的に加熱することができ、消費エネルギーを少なくすることができる。   According to a third aspect of the invention, in the invention of the first or second aspect, induction heating is used for the heating. In the present invention, unlike the case of heating in a general heating furnace, the portion to be heated can be selectively heated, and the energy consumption can be reduced.

請求項４に記載の発明は、請求項１〜請求項３のいずれか一項に記載の発明において、前記被接合部品は半導体素子であり、前記被接合部品の位置決めを行う前記基板支持治具及び位置決め治具はカーボンで形成されている。治具の材質を金属にすると、半田の溶融温度以上の温度から室温まで冷却される際に、半導体素子の熱膨張率と治具の熱膨張率との違いにより、治具が半導体素子に食い込む状態に収縮して半導体素子が損傷する虞がある。しかし、この発明では、治具がカーボンで形成されているため、治具が半導体素子に食い込む方向に収縮する状態になっても、治具の方が破損して半導体素子の損傷が防止される。   The invention according to claim 4 is the substrate support jig according to any one of claims 1 to 3, wherein the part to be joined is a semiconductor element, and the part to be joined is positioned. The positioning jig is made of carbon. If the material of the jig is metal, the jig will bite into the semiconductor element due to the difference between the thermal expansion coefficient of the semiconductor element and the thermal expansion coefficient of the jig when it is cooled from the temperature higher than the melting temperature of the solder to room temperature. There is a risk that the semiconductor element may be damaged due to contraction. However, in the present invention, since the jig is made of carbon, even if the jig contracts in the direction of biting into the semiconductor element, the jig is broken to prevent the semiconductor element from being damaged. .

本発明によれば、被半田付け部品の仮固定のための乾燥工程や基板を反転させる工程を設ける必要がなく、使用できる半田がクリーム状半田ペーストに限定されず、両面同時に被半田付け部品を基板に半田付けすることができる。   According to the present invention, there is no need to provide a drying process for temporarily fixing a part to be soldered or a process for inverting the substrate, and the solder that can be used is not limited to the cream-like solder paste. Can be soldered to the substrate.

以下、本発明を半田を溶融させるのに高周波誘導加熱を利用し、被接合部品として半導体素子を基板に半田付けする半田付け方法に具体化した一実施形態を図１及び図２にしたがって説明する。   Hereinafter, an embodiment in which the present invention is embodied in a soldering method in which high frequency induction heating is used to melt solder and a semiconductor element is soldered to a substrate as a part to be joined will be described with reference to FIGS. .

図１に示すように、半田付けには、支持台１１と、支持台１１上に載置されて基板１２を支持する役割と、基板１２の下面に半田付けされる被接合部品としての半導体素子１３を位置決めする役割とを備えた基板支持治具１４と、基板１２の上面に半田付けされる半導体素子１３を位置決めする位置決め治具１５とが使用される。   As shown in FIG. 1, for soldering, a support base 11, a role of supporting the substrate 12 placed on the support base 11, and a semiconductor element as a part to be joined to be soldered to the lower surface of the substrate 12 A substrate support jig 14 having a role of positioning 13 and a positioning jig 15 for positioning the semiconductor element 13 soldered to the upper surface of the substrate 12 are used.

支持台１１上には基板支持治具１４の位置決めを行う位置決め部１６と、基板１２の位置決めを行う基板用位置決め部１７とが設けられている。この実施形態では位置決め部１６として基板支持治具１４の側面に当接して位置決めを行う凸部が設けられている。また、基板用位置決め部１７は、基板１２の下面に形成された穴にその上端が嵌合される柱で形成されている。   A positioning unit 16 that positions the substrate support jig 14 and a substrate positioning unit 17 that positions the substrate 12 are provided on the support base 11. In this embodiment, the positioning portion 16 is provided with a convex portion that contacts the side surface of the substrate support jig 14 for positioning. The board positioning portion 17 is formed of a column whose upper end is fitted into a hole formed in the lower surface of the board 12.

基板支持治具１４及び位置決め治具１５はカーボンで形成されている。基板支持治具１４は、半導体素子１３を収容可能な凹部１４ａを有する。凹部１４ａは、側面が半導体素子１３の側面に係合して半導体素子１３の位置決めを行い、底面が半導体素子１３の基板１２に半田付けされる面と反対側の面を支持する支持面１４ｂを構成する形状（この実施形態では四角柱状）に形成されている。凹部１４ａの深さは、凹部１４ａ内に半導体素子１３及び半田１８が配置された状態において、基板１２の下面と半田１８とが所定間隔を有する状態になるように設定されている。所定間隔とは、半田１８が溶融したときにその表面張力で盛り上がり、半田が基板１２に接触して半田１８が基板１２に濡れるとともに半田１８の表面張力によって半導体素子１３が基板１２側に移動することが可能な距離を意味する。所定間隔の大きさは、半田の種類によって異なるが、例えば、０．２ｍｍ以下である。所定間隔は、予め試験で確認して設定するのが好ましい。   The substrate support jig 14 and the positioning jig 15 are made of carbon. The substrate support jig 14 has a recess 14 a that can accommodate the semiconductor element 13. The recess 14 a has a side surface that engages the side surface of the semiconductor element 13 to position the semiconductor element 13, and a bottom surface that supports the surface of the semiconductor element 13 that is opposite to the surface soldered to the substrate 12. It is formed in a shape to be configured (in this embodiment, a quadrangular prism shape). The depth of the recess 14a is set so that the lower surface of the substrate 12 and the solder 18 have a predetermined interval in a state where the semiconductor element 13 and the solder 18 are disposed in the recess 14a. The predetermined interval is raised by the surface tension when the solder 18 is melted, the solder comes into contact with the substrate 12, the solder 18 gets wet with the substrate 12, and the semiconductor element 13 moves to the substrate 12 side by the surface tension of the solder 18. Means the possible distance. The size of the predetermined interval varies depending on the type of solder, but is, for example, 0.2 mm or less. The predetermined interval is preferably set by confirming in advance by a test.

また、凹部１４ａの開口端周縁部には、半導体素子１３が基板１２に半田付けされる際に、半導体素子１３の周囲に半田フィレットが形成され易いように面取り部（図示せず）が設けられている。なお、半田１８には板状半田あるいはリボン状半田を所定の大きさに切断したものが使用される。   Further, a chamfered portion (not shown) is provided on the peripheral edge portion of the opening end of the recess 14a so that a solder fillet is easily formed around the semiconductor element 13 when the semiconductor element 13 is soldered to the substrate 12. ing. The solder 18 is a plate or ribbon solder cut into a predetermined size.

位置決め治具１５は、四角枠状に形成され、内側面が半導体素子１３の側面に係合して半導体素子１３の位置決めを行う。また、位置決め治具１５の内側部の下端周縁部には、半導体素子１３が基板１２に半田付けされる際に、半導体素子１３の周囲に半田フィレットが形成され易いように面取り部（図示せず）が設けられている。   The positioning jig 15 is formed in a square frame shape, and the inner surface engages with the side surface of the semiconductor element 13 to position the semiconductor element 13. Further, a chamfered portion (not shown) is provided at the lower peripheral edge of the inner side of the positioning jig 15 so that a solder fillet is easily formed around the semiconductor element 13 when the semiconductor element 13 is soldered to the substrate 12. ) Is provided.

基板１２は、図２に示すように、アルミニウム系金属で形成されたヒートシンク２０と、その上に接合された絶縁基板２１とからなる。絶縁基板２１は、表面に回路パターン２２を有し、裏面に接合用の金属板２３を有するセラミック基板２４で構成されている。半導体素子１３は回路パターン２２上の所定位置に半田１８を介して接合される。基板１２には、位置決め治具１５の外面に係合して位置決めを行う位置決め部２５（図１に図示）が形成されている。この実施形態では位置決め部２５として凸部が形成されている。   As shown in FIG. 2, the substrate 12 includes a heat sink 20 made of an aluminum-based metal and an insulating substrate 21 bonded thereon. The insulating substrate 21 is composed of a ceramic substrate 24 having a circuit pattern 22 on the front surface and a metal plate 23 for bonding on the back surface. The semiconductor element 13 is bonded to a predetermined position on the circuit pattern 22 via the solder 18. A positioning portion 25 (shown in FIG. 1) is formed on the substrate 12 to engage with the outer surface of the positioning jig 15 for positioning. In this embodiment, a convex portion is formed as the positioning portion 25.

次に半田付け方法を説明する。半田付け方法は、被接合部品位置決め工程と、基板の両面同時に被接合部品の半田付けを行う半田付け工程と、を含む。
先ず支持台１１上に基板支持治具１４を、位置決め部１６と係合して位置決めされた状態で載置する。次に基板支持治具１４の凹部１４ａ内に半導体素子１３及び半田１８を配置する。その結果、図１（ａ）に示すように、支持台１１上に配置された基板支持治具１４の凹部１４ａ内に半導体素子１３及び半田１８が収容された状態になる。 Next, a soldering method will be described. The soldering method includes a bonded component positioning step and a soldering step in which the bonded components are soldered simultaneously on both sides of the substrate.
First, the substrate support jig 14 is placed on the support base 11 while being engaged with the positioning portion 16 and positioned. Next, the semiconductor element 13 and the solder 18 are disposed in the recess 14 a of the substrate support jig 14. As a result, as shown in FIG. 1A, the semiconductor element 13 and the solder 18 are accommodated in the concave portion 14 a of the substrate support jig 14 disposed on the support base 11.

次に基板支持治具１４上に基板１２を、基板用位置決め部１７と係合して位置決めされた状態で配置する。次に、基板１２上に位置決め治具１５を基板支持治具１４と係合して位置決めされた状態で配置する。そして、位置決め治具１５内に半田１８及び半導体素子１３を順に収容配置する。その結果、図１（ｂ）に示すように、支持台１１上に、基板支持治具１４、基板１２、位置決め治具１５、半導体素子１３及び半田１８が配置された状態になる。基板１２は、基板支持治具１４の凹部１４ａ内の半導体素子１３上に配置された半田１８と所定間隔を設けた状態で配置される。以上で被接合部品位置決め工程が完了する。即ち、被接合部品位置決め工程では、基板１２の下面をその下面に半田付けされる被接合部品（半導体素子１３）上に配置された半田１８と所定間隔を設けた状態で半導体素子１３の位置決めを行う基板支持治具１４により支持する。また、基板１２の上面にその上面に半田付けされる半導体素子１３を基板１２との間に半田１８を配置した状態で位置決め治具１５により位置決め載置する。   Next, the substrate 12 is placed on the substrate support jig 14 while being engaged with the substrate positioning portion 17 and positioned. Next, the positioning jig 15 is disposed on the substrate 12 in a state of being positioned by engaging with the substrate support jig 14. Then, the solder 18 and the semiconductor element 13 are sequentially accommodated in the positioning jig 15. As a result, as shown in FIG. 1B, the substrate support jig 14, the substrate 12, the positioning jig 15, the semiconductor element 13, and the solder 18 are arranged on the support base 11. The substrate 12 is disposed in a state where a predetermined interval is provided with the solder 18 disposed on the semiconductor element 13 in the recess 14 a of the substrate support jig 14. The bonded part positioning process is thus completed. That is, in the bonded component positioning step, the semiconductor element 13 is positioned in a state where a predetermined interval is provided with the solder 18 disposed on the bonded component (semiconductor element 13) to be soldered to the lower surface of the substrate 12. It supports by the substrate support jig 14 to perform. Further, the semiconductor element 13 to be soldered on the upper surface of the substrate 12 is positioned and placed by the positioning jig 15 in a state where the solder 18 is disposed between the semiconductor element 13 and the substrate 12.

次に基板１２、半導体素子１３、半田１８、基板支持治具１４及び位置決め治具１５の全体を加熱して半田１８を溶融させて、基板１２の両面同時に被接合部品の半田付けを行う半田付け工程が行われる。半田付け工程では、支持台１１を還元ガス雰囲気で加熱を行う加熱装置内に配置する。加熱装置は高周波誘導加熱で加熱を行う構成であり、図１（ｃ）に示すように、支持台１１に支持された基板１２等の上方に高周波加熱コイル３０が位置する状態で加熱が行われる。なお、高周波加熱コイル３０は、パイプ状に形成され、内部に冷却水を通して高周波加熱コイル３０自身の過熱が抑制されるようになっている。高周波加熱コイル３０に高周波電流を流すと、高周波加熱コイル３０には、基板１２、基板支持治具１４、位置決め治具１５等を通る高周波の磁束が発生し、基板１２、基板支持治具１４、位置決め治具１５等には磁束の通過によって渦電流が発生して発熱し、全体が加熱される。その結果、半田１８が溶融温度以上の温度になって溶融する。   Next, the whole of the substrate 12, the semiconductor element 13, the solder 18, the substrate support jig 14, and the positioning jig 15 is heated to melt the solder 18, and soldering is performed to simultaneously solder the components to be joined on both sides of the substrate 12. A process is performed. In the soldering process, the support 11 is placed in a heating device that performs heating in a reducing gas atmosphere. The heating device is configured to perform heating by high-frequency induction heating, and heating is performed in a state where the high-frequency heating coil 30 is positioned above the substrate 12 or the like supported by the support base 11 as shown in FIG. . In addition, the high frequency heating coil 30 is formed in a pipe shape, and overheating of the high frequency heating coil 30 itself is suppressed through cooling water. When a high-frequency current is passed through the high-frequency heating coil 30, high-frequency magnetic flux passing through the substrate 12, the substrate support jig 14, the positioning jig 15 and the like is generated in the high-frequency heating coil 30, and the substrate 12, the substrate support jig 14, An eddy current is generated by the passage of magnetic flux in the positioning jig 15 and the like to generate heat and the whole is heated. As a result, the solder 18 is melted at a temperature equal to or higher than the melting temperature.

半田１８が溶融状態になると、図１（ｃ）に示すように、基板１２の下面に接合される半導体素子１３上の半田１８は、その表面張力で盛り上がり、溶融状態の半田１８の一部が基板１２の下面に接触して半田１８が基板１２に濡れる。そして、半田１８の表面張力によって半導体素子１３が基板１２側に移動して、図１（ｄ）に示すように、半導体素子１３は凹部１４ａの底面から離れた状態になる。半田１８が完全に溶融した後、高周波加熱コイル３０への高周波電流の供給を停止させる。なお、高周波電流の供給時間は予め試験によって適切な時間に設定されている。そして、溶融した半田１８は、溶融温度未満に冷却されることによって凝固し、基板１２と半導体素子１３とを接合する。   When the solder 18 is in a molten state, as shown in FIG. 1C, the solder 18 on the semiconductor element 13 bonded to the lower surface of the substrate 12 rises due to its surface tension, and a part of the molten solder 18 is The solder 18 comes into contact with the lower surface of the substrate 12 and gets wet with the substrate 12. Then, the semiconductor element 13 moves to the substrate 12 side due to the surface tension of the solder 18, and the semiconductor element 13 is separated from the bottom surface of the recess 14a as shown in FIG. After the solder 18 is completely melted, the supply of the high frequency current to the high frequency heating coil 30 is stopped. Note that the high-frequency current supply time is set to an appropriate time by a test in advance. The melted solder 18 is solidified by being cooled below the melting temperature, and joins the substrate 12 and the semiconductor element 13.

その後、加熱装置内が大気と同じ雰囲気に戻された後、支持台１１と共に半田付けが完了した基板１２及び半導体素子１３等が加熱装置内から取り出され、位置決め治具１５を取り外し、基板１２を基板支持治具１４及び支持台１１上から取り外すと、図１（ｅ）に示すように、基板１２の両面に対する半導体素子１３の半田付け工程が完了する。   Then, after the inside of the heating device is returned to the same atmosphere as the atmosphere, the substrate 12 and the semiconductor element 13 and the like that have been soldered together with the support base 11 are taken out from the heating device, the positioning jig 15 is removed, and the substrate 12 is removed. When it is removed from the substrate support jig 14 and the support base 11, the soldering process of the semiconductor element 13 to both surfaces of the substrate 12 is completed as shown in FIG.

基板１２は、絶縁基板２１をヒートシンク２０に接合する処理等を受けて形成されるため、完全に平坦な状態ではない（反りが存在する）場合がある。また、基板支持治具１４の寸法交差や半導体素子１３及び半田１８の寸法交差によって、基板１２と、凹部１４ａ内に収容配置された半田１８の上面との距離は変動する。しかし、基板１２は、その下面と、基板１２の下面に半田付けされる半導体素子１３上に配置された半田１８との間に所定間隔が存在するように配置されて半田付けが行われる。そして、半田１８の溶融状態において半田の表面張力により半田１８が盛り上がることを利用して、半田１８が基板１２の下面に接触して濡れる状態となり、半導体素子１３が傾くことなく良好な状態で半田付けされる。   Since the substrate 12 is formed by receiving a process for bonding the insulating substrate 21 to the heat sink 20 or the like, the substrate 12 may not be completely flat (there is a warp) in some cases. Further, the distance between the substrate 12 and the upper surface of the solder 18 accommodated in the recess 14a varies depending on the crossing of the substrate support jig 14 and the crossing of the semiconductor element 13 and the solder 18. However, the substrate 12 is disposed and soldered so that a predetermined interval exists between the lower surface of the substrate 12 and the solder 18 disposed on the semiconductor element 13 to be soldered to the lower surface of the substrate 12. Then, utilizing the fact that the solder 18 rises due to the surface tension of the solder in the molten state of the solder 18, the solder 18 comes into contact with the lower surface of the substrate 12 and gets wet, and the semiconductor element 13 is in a good state without being tilted. Attached.

したがって、この実施形態によれば、以下に示す効果を得ることができる。
（１）支持台１１上に基板１２をその下面に半田付けされる半導体素子１３上に配置された半田１８と所定間隔を設けて支持するとともに半導体素子１３の位置決めを行う基板支持治具１４を介して支持し、基板１２の上面にはその上面に半田付けされる半導体素子１３を基板１２との間に半田１８を配置して位置決めされた状態で載置する。そして、その状態で基板１２、半導体素子１３、半田１８及び基板支持治具１４の全体を加熱して半田を溶融させることにより半導体素子１３が基板１２に半田付けされる。したがって、半導体素子１３の仮固定のための乾燥工程や基板１２を反転させる工程を設ける必要がなく、使用できる半田１８がクリーム状半田ペーストに限定されず、両面同時に半導体素子１３を基板１２に半田付けすることができる。 Therefore, according to this embodiment, the following effects can be obtained.
(1) A substrate support jig 14 for supporting the substrate 12 on the support base 11 with a predetermined distance from the solder 18 disposed on the semiconductor element 13 to be soldered to the lower surface of the substrate 12 and positioning the semiconductor element 13. The semiconductor element 13 to be soldered to the upper surface of the substrate 12 is placed on the upper surface of the substrate 12 in a state where the solder 18 is disposed between the semiconductor element 13 and the substrate 12. In this state, the substrate 12, the semiconductor element 13, the solder 18, and the substrate support jig 14 are heated to melt the solder, whereby the semiconductor element 13 is soldered to the substrate 12. Therefore, it is not necessary to provide a drying process for temporarily fixing the semiconductor element 13 or a process for inverting the substrate 12, and the usable solder 18 is not limited to the cream-like solder paste, and the semiconductor element 13 is soldered to the substrate 12 simultaneously on both sides. Can be attached.

（２）基板支持治具１４は、基板１２の下面に半田付けされる半導体素子１３の半田付けされる面と反対側の面を支持する支持面１４ｂを備えているため、半導体素子１３は、支持面１４ｂからも熱を受ける状態になり、支持台１１に直接接触した状態に配置された場合に比べて、加熱時に半導体素子１３の熱が支持台１１に奪われ難くなる。したがって、基板１２の下面に半田付けされる半導体素子１３は、加熱が効率よく行われる。   (2) Since the substrate support jig 14 includes the support surface 14b that supports the surface opposite to the surface to be soldered of the semiconductor element 13 to be soldered to the lower surface of the substrate 12, the semiconductor element 13 The support surface 14b is also in a state of receiving heat, and the heat of the semiconductor element 13 is less likely to be taken away by the support table 11 during heating compared to the case where the support surface 14b is disposed in direct contact with the support table 11. Therefore, the semiconductor element 13 to be soldered to the lower surface of the substrate 12 is efficiently heated.

（３）基板１２等の加熱には誘導加熱が使用される。したがって、一般の加熱炉で加熱する場合と異なり、加熱すべき箇所を選択的に加熱することができ、加熱に必要な消費エネルギーを少なくすることができる。   (3) Induction heating is used for heating the substrate 12 and the like. Therefore, unlike the case of heating in a general heating furnace, a portion to be heated can be selectively heated, and energy consumption required for heating can be reduced.

（４）基板１２がアルミニウム系金属で形成されているため、誘導加熱で加熱される際に、基板１２が強磁性材料で形成された場合に比べて基板１２全体が均一に加熱される状態になる。   (4) Since the substrate 12 is formed of an aluminum-based metal, the entire substrate 12 is heated more uniformly when heated by induction heating than when the substrate 12 is formed of a ferromagnetic material. Become.

（５）基板１２に半田付けされるのは半導体素子１３であり、半導体素子１３の位置決めを行う治具、即ち基板支持治具１４及び位置決め治具１５はカーボンで形成されている。治具の材質を金属にすると、半田の溶融温度以上の温度から室温まで冷却される際に、半導体素子１３の熱膨張率と治具の熱膨張率との違いにより、治具が半導体素子１３に食い込む状態に収縮して半導体素子１３が損傷する虞がある。しかし、治具がカーボンで形成されているため、治具が半導体素子１３に食い込む方向に収縮する状態になっても、治具の方が破損して半導体素子１３の損傷が防止される。   (5) The semiconductor element 13 is soldered to the substrate 12, and the jig for positioning the semiconductor element 13, that is, the substrate support jig 14 and the positioning jig 15 are formed of carbon. If the material of the jig is metal, when the jig is cooled from the temperature equal to or higher than the melting temperature of the solder to room temperature, the jig may be changed due to the difference between the thermal expansion coefficient of the semiconductor element 13 and the thermal expansion coefficient of the jig. There is a possibility that the semiconductor element 13 may be damaged by contracting into a state where it bites into the semiconductor element 13. However, since the jig is made of carbon, even if the jig contracts in the direction of biting into the semiconductor element 13, the jig is damaged and the semiconductor element 13 is prevented from being damaged.

（６）基板支持治具１４及び位置決め治具１５は、端面に半田フィレットを形成し易くするための面取り部が形成されているため、半田フィレット（図示せず）が形成された状態で半田付けが行われ易くなる。   (6) Since the substrate support jig 14 and the positioning jig 15 have chamfered portions for facilitating the formation of solder fillets on the end faces, soldering is performed with a solder fillet (not shown) formed. Is easily performed.

実施形態は前記に限定されるものではなく、例えば、次のように具体化してもよい。
○ 基板支持治具１４及び位置決め治具１５は、それぞれ１個の半導体素子１３及び半田１８の位置決めを行う構成に代えて、図３（ａ），（ｂ）に示すように、１個の基板支持治具１４又は位置決め治具１５が複数の半導体素子１３及び半田１８を位置決めする構成にしてもよい。 The embodiment is not limited to the above, and may be embodied as follows, for example.
The substrate support jig 14 and the positioning jig 15 are each replaced with a structure for positioning one semiconductor element 13 and solder 18, respectively, as shown in FIGS. 3 (a) and 3 (b). The support jig 14 or the positioning jig 15 may be configured to position the plurality of semiconductor elements 13 and the solder 18.

○ 基板支持治具１４を位置決めする位置決め部として、支持台１１に凸部を設ける代わりに、図３（ｂ）に示すように、基板支持治具１４の下部が嵌合する凹部１１ａを設けてもよい。   ○ As a positioning part for positioning the substrate support jig 14, instead of providing a convex part on the support base 11, as shown in FIG. 3B, a concave part 11 a into which the lower part of the substrate support jig 14 is fitted is provided. Also good.

○ 位置決め治具１５を位置決めする位置決め部として、基板１２に凸部からなる位置決め部２５を設ける代わりに、図３（ｂ）に示すように、位置決め治具１５の下部が嵌合する凹部１２ａを設けてもよい。   As a positioning part for positioning the positioning jig 15, instead of providing the positioning part 25 made of a convex part on the substrate 12, as shown in FIG. 3B, a concave part 12 a into which the lower part of the positioning jig 15 is fitted is provided. It may be provided.

○ 基板１２の上面に接合される半導体素子１３と、基板１２の下面に接合される半導体素子１３とは基板１２の同じ位置を挟む状態で配置される構成に限らず、図４に示すように、ずれた状態で配置される構成としたり、半導体素子１３の数が上面と下面とで異なる構成にしたりしてもよい。   As shown in FIG. 4, the semiconductor element 13 bonded to the upper surface of the substrate 12 and the semiconductor element 13 bonded to the lower surface of the substrate 12 are not limited to the configuration in which the same position of the substrate 12 is sandwiched. Alternatively, the arrangement may be made in a shifted state, or the number of semiconductor elements 13 may be different between the upper surface and the lower surface.

○ 基板支持治具１４は、基板１２の下面に半田付けされる被接合部品（半導体素子１３）の半田付けされる面と反対側の面を支持する支持面を備えていない構成であってもよい。例えば、位置決め治具１５と同じ枠状であってもよい。その場合、半導体素子１３の半田付けされる面と反対側の面は支持台１１に支持される状態になる。   Even if the board | substrate support jig | tool 14 is a structure which is not provided with the support surface which supports the surface on the opposite side to the surface to which the to-be-joined part (semiconductor element 13) soldered to the lower surface of the board | substrate 12 is soldered. Good. For example, the same frame shape as the positioning jig 15 may be used. In that case, the surface of the semiconductor element 13 opposite to the surface to be soldered is supported by the support base 11.

○ 基板１２に接合される半導体素子１３は同じ物だけに限らず、異なる種類の半導体素子が混在する状態で接合される基板１２に適用してもよい。異なる種類の半導体素子は、面積が異なるだけでなく形状や高さが異なるものであってもよい。   The semiconductor element 13 bonded to the substrate 12 is not limited to the same thing, and may be applied to the substrate 12 bonded in a state where different types of semiconductor elements are mixed. Different types of semiconductor elements may have different shapes and heights as well as different areas.

○ 半田付けされる被接合部品は半導体素子１３に限らず、表面実装部品であればよい。
○ 絶縁基板２１は絶縁層としてセラミック板を備えるセラミック基板に限らず、金属板の上に絶縁樹脂層を介して金属回路（回路パターン２２）が形成されたものであってもよい。 The soldered component to be soldered is not limited to the semiconductor element 13 and may be a surface mount component.
The insulating substrate 21 is not limited to a ceramic substrate provided with a ceramic plate as an insulating layer, and a metal circuit (circuit pattern 22) may be formed on a metal plate via an insulating resin layer.

○ 両面プリント配線板に表面実装部品を半田付けで実装する場合に適用してもよい。
○ 半田付けに使用する半田１８は板状（シート状）半田に限らず、半田ペーストを使用してもよい。 ○ It may be applied when surface-mount components are mounted on a double-sided printed wiring board by soldering.
The solder 18 used for soldering is not limited to plate-shaped (sheet-shaped) solder, and solder paste may be used.

○ 加熱方法は高周波誘導加熱に限らず、ランプで光や赤外線を加熱すべき箇所に照射して加熱を行う方法や、電気ヒーターを使用して加熱を行う方法や、加熱炉の内部全体を加熱する方法であってもよい。   ○ The heating method is not limited to high-frequency induction heating, the method uses a lamp to irradiate light or infrared light to the area to be heated, the method using an electric heater, or the entire interior of the heating furnace. It may be a method to do.

○ 基板支持治具１４及び位置決め治具１５はカーボン製に限らない。特に、半田付けされる被接合部品がベアチップのように割れ易い電子部品でない場合は、金属やセラミックス製であってもよい。   The substrate support jig 14 and the positioning jig 15 are not limited to carbon. In particular, when the part to be soldered is not a breakable electronic part such as a bare chip, it may be made of metal or ceramics.

以下の技術的思想（発明）は前記実施形態から把握できる。
（１）請求項１〜請求項４に記載の発明において、前記基板は、アルミニウム系金属で形成されたヒートシンクと、その上に接合されるとともに、表面に絶縁層を介して回路パターンが形成された複数の絶縁基板とで構成されている。 The following technical idea (invention) can be understood from the embodiment.
(1) In the invention according to any one of claims 1 to 4, the substrate is bonded to a heat sink formed of an aluminum-based metal and a circuit pattern is formed on the surface via an insulating layer. And a plurality of insulating substrates.

（ａ）は支持台上に基板支持部、半導体素子及び半田が配置された状態を示す模式図、（ｂ）は支持台上に基板支持部、基板、位置決め治具、半導体素子及び半田が配置された状態を示す模式図、（ｃ）は半田が溶融された状態を示す模式図、（ｄ）は半田が凝固した状態を示す模式図、（ｅ）は半田付けが完了した製品の模式図。(A) is a schematic diagram showing a state in which a substrate support part, a semiconductor element and solder are arranged on a support table, and (b) is a diagram showing a substrate support part, a substrate, a positioning jig, a semiconductor element and solder arranged on the support table. (C) is a schematic diagram illustrating a state where the solder is melted, (d) is a schematic diagram illustrating a state where the solder is solidified, and (e) is a schematic diagram of a product after soldering is completed. . 基板の構成を示す模式断面図。The schematic cross section which shows the structure of a board | substrate. 別の実施形態における基板と位置決め治具を示し、（ａ）は模式平面図、（ｂ）は（ａ）のＢ−Ｂ線における模式断面図。The board | substrate and positioning jig | tool in another embodiment are shown, (a) is a schematic plan view, (b) is a schematic cross section in the BB line of (a). 別の実施形態の模式断面図。The schematic cross section of another embodiment. （ａ），（ｂ）は従来技術の断面図。(A), (b) is sectional drawing of a prior art.

符号の説明Explanation of symbols

１１…支持台、１２…基板、１３…被接合部品としての半導体素子、１４…基板支持治具、１４ｂ…支持面、１５…位置決め治具、１８…半田。   DESCRIPTION OF SYMBOLS 11 ... Support stand, 12 ... Board | substrate, 13 ... Semiconductor element as to-be-joined component, 14 ... Board | substrate support jig | tool, 14b ... Support surface, 15 ... Positioning jig | tool, 18 ... Solder.

Claims (4)

基板の両面に被接合部品を半田を介して接合する半田付け方法であって、
前記基板の下面とその下面に半田付けされる被接合部品上に配置された半田とが所定間隔離間した状態で前記被接合部品の位置決めを行う基板支持治具により、前記基板の下面を支持するとともに、前記基板の上面にその上面に半田付けされる被接合部品を前記基板との間に半田を配置した状態で位置決め治具により位置決め載置する被接合部品位置決め工程と、
前記被接合部品位置決め工程に続いて、前記基板、被接合部品、半田、基板支持治具及び位置決め治具の全体を加熱して半田を溶融させて、前記基板の両面同時に被接合部品の半田付けを行う半田付け工程と、
を含むことを特徴とする半田付け方法。 A soldering method for joining parts to be joined to both sides of a substrate via solder,
The lower surface of the substrate is supported by a substrate support jig that positions the bonded component in a state where the lower surface of the substrate and the solder disposed on the bonded component to be soldered to the lower surface are spaced apart from each other by a predetermined distance. In addition , a to-be-joined part positioning step for positioning and placing a to-be-joined part to be soldered to the top surface of the substrate by a positioning jig in a state where the solder is disposed between the substrate and the board,
Subsequent to the component positioning step, the substrate, the component to be bonded, solder, the substrate support jig and the positioning jig are heated to melt the solder, and soldering of the substrate to be bonded is performed simultaneously on both sides of the substrate. Soldering process to perform,
A soldering method comprising: 前記基板支持治具は、前記基板の下面に半田付けされる被接合部品の半田付けされる面と反対側の面を支持する支持面を備えている請求項１に記載の半田付け方法。   The soldering method according to claim 1, wherein the substrate support jig includes a support surface that supports a surface opposite to a surface to be soldered of a component to be bonded that is soldered to a lower surface of the substrate. 前記加熱には誘導加熱が使用される請求項１又は請求項２に記載の半田付け方法。   The soldering method according to claim 1, wherein induction heating is used for the heating. 前記被接合部品は半導体素子であり、前記被接合部品の位置決めを行う前記基板支持治具及び位置決め治具はカーボンで形成されている請求項１〜請求項３のいずれか一項に記載の半田付け方法。   The solder according to claim 1, wherein the part to be joined is a semiconductor element, and the substrate support jig and the positioning jig for positioning the part to be joined are formed of carbon. Attaching method.
JP2008072207A 2008-03-19 2008-03-19 Soldering method Expired - Fee Related JP4985497B2 (en)

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