JP2007243050A - Thermoelectric module, and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a reduction of a mechanical strength caused from a soldering defect of an electrode in a thermoelectric module having a structure that a nearly center portion of a thermoelectric semiconductor crystal is held by a substrate and electrodes are connected on both sides of the thermoelectric semiconductor crystal. <P>SOLUTION: The thermoelectric module has a structure that the nearly center portion of the thermoelectric semiconductor crystal 202 is held by the supporting substrate 201 and the electrodes 203, 204 are connected on both sides of the thermoelectric semiconductor crystal 202. On an upper surface of the supporting substrate 201, a sheet 205 of a hot-melt material is laminated by such as a vacuum lamination method. The thermoelectric semiconductor crystal 202 is fixedly bonded on the supporting substrate 201 with the hot-melt material melted by heating in a manufacturing process. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a thermoelectric module having a structure in which a substantially central portion of a thermoelectric semiconductor crystal is held by a substrate and electrodes are connected to both end faces of the thermoelectric semiconductor crystal, and a manufacturing method thereof. The present invention relates to a thermoelectric module capable of preventing breakage due to imbalance between thermal stress and mechanical stress caused by poor soldering and unevenness of protrusion length of a thermoelectric semiconductor crystal from a substrate, and a method of manufacturing the same.

  Conventionally, thermoelectric modules including thermoelectric semiconductor crystals such as BiTe (bismuth tellurium) have been used in cooling devices such as LSIs and computer CPUs, and electronic cooling devices such as heat-retaining refrigerators. FIG. 4 shows such a conventional general thermoelectric module. In this figure, A is a front view and B is a perspective view.

  This thermoelectric module is composed of a thermoelectric semiconductor crystal 101 and an upper substrate 102 and a lower substrate that are made of a material having thermal conductivity and electrical insulation, such as ceramics such as alumina and aluminum nitride, and hold the thermoelectric semiconductor crystal 101 from above and below. 103. The thermoelectric semiconductor crystal 101 includes an n-type thermoelectric semiconductor crystal 101n obtained by cutting an n-type thermoelectric semiconductor crystal into which BiTe is mixed with Se (selenium) or the like in a square shape, and BiTe with Sb (antimony) or the like in a predetermined amount. The p-type thermoelectric semiconductor crystals 101p formed by blending are alternately arranged, and each of the n-type thermoelectric semiconductor crystals 101n and the p-type thermoelectric semiconductor crystals 101p is composed of a copper plate or the like between the upper and lower end faces. The upper electrode 104 and the lower electrode 105 are soldered, and the n-type thermoelectric semiconductor crystal 101n and the p-type thermoelectric semiconductor crystal 101p are alternately electrically connected in series. In addition, the upper and lower electrodes 104 and 105 are bonded and fixed to the substrates 102 and 103.

  A DC power supply is connected to the lower electrodes 105 at both ends via lead wires 106 and 107. When a current is passed from the DC power supply, heat is absorbed by the electrode on one end face side (upper electrode 104 in the figure) due to the Peltier effect. Occurs, and heat is generated at the other end face side electrode (lower electrode 105 in the figure). In this thermoelectric module, for example, an object to be cooled is disposed on the upper substrate 102 that is the heat absorption side, and a heat exchange member that is a combination of a heat sink and a fan is disposed under the lower substrate 103 that is the heat dissipation side. used.

  However, in the thermoelectric module described above, one of the substrates is cooled and contracted due to heat absorption, and the other substrate expands due to a temperature increase due to heat dissipation, so that the thermoelectric semiconductor crystals 101n and 101p and the upper electrode 104 are expanded due to thermal strain. , The connection with the lower electrode 105 may be disconnected. This is especially true when the temperature difference between the upper and lower substrates is high, that is, when the upper and lower substrates have a large expansion / contraction amount, when the number of repeated thermal strains is large, and when the upper and lower substrates are large. In many cases, the thermoelectric module is destroyed by the thermoelectric module, and the size of the upper and lower substrates is about 50 mm square, the upper and lower temperature difference is about 50 ° C, and the number of repetitions is 10,000 times. It was limited to about 50,000 times. Furthermore, since the substrates 102 and 103 are interposed between the thermoelectric semiconductor crystal 101 and the heat exchange member, the heat exchange efficiency is reduced due to the thermal resistance of the substrates 102 and 103.

  Therefore, the applicant of the present application proposed a thermoelectric module having a structure without upper and lower substrates as shown in FIG. 5 (Patent Documents 2 and 3). This thermoelectric module has a structure in which a thermoelectric semiconductor crystal 202 made of a p-type thermoelectric semiconductor crystal 202p and an n-type thermoelectric semiconductor crystal 202n is fixed to a support substrate 201 made of ceramics, glass epoxy resin, or the like. . An upper electrode 203 made of a copper plate or the like is bonded to the upper surface of the thermoelectric semiconductor crystal 202, and a lower electrode 204 made of a copper plate or the like is bonded to the lower surface by solder. These electrodes (upper electrode 203 In addition, the p-type thermoelectric semiconductor crystal 202p and the n-type thermoelectric semiconductor crystal 202n are alternately electrically connected in series by the lower electrode 204). Lead wires (not shown) are connected to the electrodes at both ends of the series connection. When a current is supplied from a DC power source in a predetermined direction, heat is absorbed by the upper electrode 203 due to the Peltier effect, and the lower electrode 204 A fever occurs. By supplying a current in the opposite direction, the lower electrode 204 can absorb heat and the upper electrode 203 can generate heat.

According to this thermoelectric module, since the convection of air between the cooling side and the heat radiation side can be prevented by the support substrate 201, a large temperature difference can be realized as compared with the conventional type shown in FIG. In addition, the support substrate 201 has a flexible structure in which the thermoelectric semiconductor crystal 202 is held substantially at the center and the upper and lower electrodes 203 and 204 are not fixed to a substrate such as alumina ceramics. An unparalleled long life could be achieved when controlled by a control method that is greatly influenced by thermal distortion, such as voltage on / off control or drive voltage polarity reversible control. In addition, the holding power of the thermoelectric semiconductor crystal 202 possessed by the support substrate 201 and the flexible structure of the electrode part make it possible to manufacture a thermoelectric module having a larger size (substrate area) than the conventional type and diversify its applications It was.
JP 63-110680 A (FIG. 1) Japanese Patent No. 3151759 Japanese Patent No. 3493390

  When the thermoelectric module having the structure shown in FIG. 5 is manufactured, a plurality of support substrates having a plurality of through holes as disclosed in Patent Documents 2 and 3 are arranged in the front-rear direction so that the respective through holes face each other. And inserting a plurality of needle-like thermoelectric semiconductor crystals into the through holes of the plurality of support substrates and bonding them, and then cutting the needle-like thermoelectric semiconductor crystals at a portion between the support substrates. Instead, slice the ingot-shaped thermoelectric semiconductor crystal into a plate shape, apply predetermined plating on both sides of the plate, cut it into a dice, insert the dice-shaped thermoelectric semiconductor crystal into the through hole of the support substrate, It is considered to employ a bonding process. In both of the thermoelectric module manufacturing method employing this process and the thermoelectric module manufacturing methods disclosed in Patent Documents 2 and 3, the thermoelectric semiconductor crystal is fixed to the support substrate by adhesion, and then the thermoelectric semiconductor crystal is bonded to the thermoelectric semiconductor crystal. Solder the electrode.

  Here, BiTe generally used in thermoelectric modules has an electric resistance of 950 μΩ · cm, which is about 600 times larger than copper (1.5 μΩ · cm), so that it is several 10 A necessary to realize sufficient cooling capacity. In order to obtain a current value of about, it is necessary to reduce the height of the dice-shaped thermoelectric semiconductor crystal to about 1 to 2 mm. Therefore, even if a gap (clearance) of about 0.1 mm is provided between the side surface of the thermoelectric semiconductor crystal inserted into the through hole and the through hole, as shown in FIG. 6A, the thermoelectric semiconductor crystal 202 and the support substrate 201 are provided. And the adhesive applied between the two crawls up as shown by b1 or hangs down as shown by b2, and adheres to the upper end surface and the lower end surface, which are the electrode connection surfaces of the thermoelectric semiconductor crystal 202, There is a risk of hindering reliable soldering.

  The size of the thermoelectric semiconductor crystal 202 is preferably large in order to ensure mechanical strength. On the other hand, the heat absorption / heat generation amount of the thermoelectric module is proportional to the number of p and n element pairs per unit area. Usually, the size of the element is about 1.6 to 2.3 mm. However, this size is considerably larger than that of lead wires, IC chips, etc., and as shown in FIG. 6B, when soldering the thermoelectric semiconductor crystal 202 and the electrode, void c1 is generated in the solder c, and the soldering strength is increased. Further, there is a disadvantage that the thermal resistance increases when moving through the solder because the voids are generated.

  In addition, since soldering is usually performed under atmospheric pressure at room temperature, SnPb, a eutectic alloy such as SnZn, or a small amount of Bi or the like is added to Sn to suppress the generation of whiskers under stress. A blended product is used. However, since solder materials such as SnZn and SnBi are easily oxidized, a flux containing a reducing material such as rosin is blended in the solder to prevent the generation of Sn oxide film, or sprayed onto the solder application surface in advance. It is used by improving the wettability of the electrode and the solder by applying the above method and reducing the electrode surface during high temperature heating. However, since the flux remains as a residue and promotes corrosion at the electrode / solder interface, the strength of soldering may decrease over time.

  As shown in FIG. 6C, when the thermoelectric semiconductor crystal 202 is inserted into the through hole of the support substrate 201, the vertical center of the thermoelectric semiconductor crystal 202 does not coincide with the vertical center of the through hole. It may be shifted by several tens of μm If bonded and fixed in such a shifted position, variations in thermal resistance and mechanical stress occur during use, and there is a risk of destruction due to long-term use.

  The present invention has been made in view of the above-described conventional problems, and a first object thereof is a structure in which a substantially central portion of a thermoelectric semiconductor crystal is held by a substrate and electrodes are connected to both end faces of the thermoelectric semiconductor crystal. In the thermoelectric module, the decrease in mechanical strength due to poor soldering of the electrode to the thermoelectric semiconductor crystal is reduced, and the second object is that the protrusion length of the thermoelectric semiconductor crystal from the substrate is uneven in the thermoelectric module. This is to reduce the breakage due to the imbalance between the thermal stress and the mechanical stress caused by.

The invention of claim 1 is a thermoelectric module having a structure in which a substantially central portion of a thermoelectric semiconductor crystal is held by a substrate, and electrodes are connected to both end faces of the thermoelectric semiconductor crystal, and the substrate and the thermoelectric semiconductor crystal are heated. It is fixed by welding.
According to a second aspect of the present invention, in the thermoelectric module according to the first aspect, a heat welding material is bonded to the surface of the substrate, and the heat welding material is fixed by heat welding.
According to a third aspect of the present invention, in the thermoelectric module according to the first aspect, the substrate is made of a thermoplastic resin and fixed by thermal welding of the substrate itself.
According to a fourth aspect of the present invention, in the thermoelectric module according to the third aspect, the thermoplastic resin has a characteristic of crosslinking when reaching a predetermined temperature higher than the thermal welding temperature.
The invention of claim 5 includes a step of inserting a thermoelectric semiconductor crystal into the through hole of a substrate having a plurality of through holes, and a step of thermally welding the substrate and the thermoelectric semiconductor crystal by heating the substrate. And a method of manufacturing a thermoelectric module.
According to a sixth aspect of the present invention, in the method for manufacturing a thermoelectric module according to the fifth aspect of the present invention, the method further comprises a step of bonding a heat welding material to the surface of the substrate before heating the substrate.
According to a seventh aspect of the present invention, in the method for manufacturing a thermoelectric module according to the fifth aspect, a substrate made of a thermoplastic resin is used, and the substrate itself is thermally welded.
The invention of claim 8 is the method of manufacturing a thermoelectric module according to any one of claims 5 to 7, further comprising a step of soldering an electrode in vacuum to the thermoelectric semiconductor crystal thermally welded to the substrate. Features.

(Function)
According to the first and fifth aspects of the present invention, the substrate and the thermoelectric semiconductor crystal are fixed by thermal welding.
According to the second and sixth aspects of the present invention, the substrate and the thermoelectric semiconductor crystal are thermally welded and fixed by the heat welding material joined to the surface of the substrate.
According to invention of Claim 3 and 7, a board | substrate and a thermoelectric semiconductor crystal are fixed by the thermal welding of the board | substrate itself which consists of a thermoplastic resin.
According to invention of Claim 4, a board | substrate and a thermoelectric semiconductor crystal are fixed by the thermal welding of the board | substrate itself which consists of thermoplastic resins, and also it solders at the predetermined temperature higher than a thermal welding temperature, A board | substrate is carried out. Since the thermoplastic resin is crosslinked and the thermoplasticity is lost, the heat resistance is improved.
According to the invention of claim 8, by soldering in a vacuum, generation of voids is prevented and solder oxidation due to flux residue is prevented.

  According to the present invention, in a thermoelectric module having a structure in which a substantially central portion of a thermoelectric semiconductor crystal is held by a substrate and electrodes are connected to both end faces of the thermoelectric semiconductor crystal, a machine caused by poor soldering of the electrode to the thermoelectric semiconductor crystal The reduction in the mechanical strength can be reduced, and the breakage due to the imbalance between the thermal stress and the mechanical stress caused by the unevenness of the protrusion length of the thermoelectric semiconductor crystal from the substrate can be reduced.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a front view of a thermoelectric module according to an embodiment of the present invention. This thermoelectric module has a structure in which a thermoelectric semiconductor crystal 202 composed of a p-type thermoelectric semiconductor crystal 202p and an n-type thermoelectric semiconductor crystal 202n is fixed in a state where it penetrates a support substrate 201. That is, the thermoelectric semiconductor crystal 202 is inserted into the through hole formed in the support substrate 201 and fixed.

  The support substrate 201 is made of a resin (soft resin) that is softer than the glass epoxy resin, such as FRP, PET, polyester resin, and the like having a thickness of about 0.2 to 0.3 mm. The p-type thermoelectric semiconductor crystal 202p and the n-type thermoelectric semiconductor crystal 202n are, for example, rectangular parallelepiped BiTe-based thermoelectric semiconductor crystals each having W (width) × D (depth) × H (height) of 2 mm × 2 mm × 2.5 mm. Further, it protrudes about 1 mm on both sides of the support substrate 201. The through hole formed in the support substrate 201 is, for example, 2.1 mm × 2.1 mm. In this case, when the center axis of the thermoelectric semiconductor crystal 202 is inserted in accordance with the center axis ship of the through hole, a clearance of 0.05 mm is formed around the thermoelectric semiconductor crystal 202, and is dissolved by heating in the manufacturing process described later. As the hot melt material flows into the clearance and solidifies, the crystals are fixed to the support substrate 201.

  The p-type thermoelectric semiconductor crystals 202p and the n-type thermoelectric semiconductor crystals 202n are alternately arranged in a matrix. An upper electrode 203 and a lower electrode 204 made of a copper plate having a thickness of about 300 μm are joined to the upper and lower surfaces of the p-type thermoelectric semiconductor crystal 202p and the n-type thermoelectric semiconductor crystal 202n by solder. The p-type thermoelectric semiconductor crystal 202p and the n-type thermoelectric semiconductor crystal 202n are alternately joined to the electrodes on the upper surface and the lower surface, and finally all the thermoelectric semiconductor crystals are electrically connected in series. A hot melt material sheet 205 is bonded to the upper surface of the support substrate 201 by a vacuum laminating method or the like.

  A method for manufacturing a thermoelectric module having the above configuration will be described with reference to FIGS. Here, FIGS. 2 and 3 show cross sections of the respective members, and hatching is given except for the thermoelectric semiconductor crystal 202.

  First, as shown in FIG. 2A, a hot melt material sheet 205 is bonded to the upper surface of the support substrate 201, and a laminate of the support substrate 201 and the hot melt material sheet 205 (hereinafter referred to as a support substrate / hot melt material sheet laminate). ). Here, the support substrate 201 is made of a PET sheet (softening point 80 to 120 ° C.) having a thickness of 3 mm, and the hot-melt material sheet 205 is an EVA (ethylene vinyl acetate copolymer) adhesive (softening point) having a thickness of 0.15 mm. 95 ℃) is laminated by vacuum laminating.

  Next, as shown in FIG. 2B, a through hole 206 for inserting the thermoelectric semiconductor crystal 202 is formed by punching the support substrate / hot melt material sheet laminate. Here, the sizes of the through-hole 206 and the inserted thermoelectric semiconductor crystal 202 are as described above.

  Next, as shown in FIG. 2C, the support substrate / hot-melt material sheet laminate in which the through holes 206 are formed is placed on the upper surface of the thermoelectric semiconductor element insertion form 207. On the upper surface of the thermoelectric semiconductor element insertion form 207, a hole 207a having a predetermined depth facing the through hole 206 is formed.

  Next, as shown in FIG. 2D, the thermoelectric semiconductor crystal 202 is inserted into the through-hole 206 from the upper surface side of the support substrate / hot-melt material sheet laminate in accordance with the position of the through-hole 206. The lower end of the thermoelectric semiconductor crystal 202 comes into contact with the bottom surface of the hole 207a and stops.

  Here, the thermoelectric semiconductor crystal 202 is obtained by slicing an ingot-shaped BiTe crystal into a disk shape in advance, applying Ni plating on both sides thereof, and further applying SnBi plating that is Pb (lead) free solder on the plating layer, It is diced into crystal pieces of the size described above. This Ni plating layer prevents copper ions in the upper electrode 203 and the lower electrode 204 and silver ions in the solder from entering the thermoelectric semiconductor crystal due to migration when the thermoelectric module is energized. Instead of Ni plating, a material that traps copper ions and silver ions, for example, SnSb may be formed on both end faces of the thermoelectric semiconductor crystal with a thickness of about 10 μm. Further, the formation method of Ni or SnSb is not limited to plating, and vacuum deposition, sputtering, thermal melting after applying a solder paste, or the like may be used.

  Next, in the state shown in FIG. 2D, the supporting substrate / hot melt material sheet laminate is heated from above by a heating means (not shown). Thereby, the hot-melt material sheet 205 is melted, flows into the clearance 208 that existed before the heating (see FIG. 2E), and is filled in the clearance 208 (see FIG. 2F). Thereafter, when the heating is released and the thermoelectric semiconductor element insertion form 207 is removed, the hot-melt material sheet 205 is solidified. As shown in FIG. 2G, the p-type thermoelectric semiconductor crystal 202p and the n-type thermoelectric semiconductor crystal 202n Is fixed to the support substrate 201.

  Here, high-frequency induction heating (frequency: 100 to 200 kHz) can be used as the heating means. In this case, the support substrate 201 is heated by the dielectric loss of the PET sheet itself, which is the support substrate 201, and the hot melt material sheet 205 on the upper surface thereof is dissolved. The thermoelectric semiconductor element insertion form 207 may be removed and then heated. Further, the thermoelectric semiconductor crystal 202 may be inserted into the support substrate 201 without using the thermoelectric semiconductor element insertion form 207. In the case of these configurations, the support substrate 201 can be heated from below.

  Next, as shown in FIG. 3A, the upper electrode 203 is soldered to the upper end surface of the thermoelectric semiconductor crystal 202 fixed to the support substrate / hot-melt material sheet laminate, and then, as shown in FIG. The lower electrode 204 is soldered to the lower end surface of the substrate. Here, by performing soldering in a vacuum reflow furnace, generation of voids can be prevented, and solder oxidation due to flux residue can be prevented by not using flux for preventing Sn oxide film generation. preferable.

  As described above, according to the present embodiment, when the thermoelectric semiconductor crystal 202 is fixed to the support substrate 201, the thermoelectric semiconductor crystal 202 is used by welding the hot melt sheet 205 without using a liquid adhesive at room temperature. There is no possibility that the adhesive adheres to the upper end surface and the lower end surface, which are the electrode connection surfaces, and hinders reliable soldering. In addition, since a flexible material is used for the support substrate 201, even if the protrusion lengths of the thermoelectric semiconductor crystals 202 from the support substrate 201 are uneven, it is possible to prevent breakage due to imbalance between thermal stress and mechanical stress. Furthermore, the irregularity can be reduced by positioning the thermoelectric semiconductor crystal 202 in the vertical direction with respect to the support substrate 201 by the thermoelectric semiconductor element insertion form 207.

The present invention can be modified as described in the following (1) to (3), for example.
(1) A polyester resin sheet having a thickness of 0.2 to 0.3 mm is used as the support substrate 201. The polyester resin sheet, that is, the support substrate 201 itself is melted and welded by high frequency induction heating without using the hot melt material sheet 205. In this case, the upper and lower surfaces of the thermoelectric semiconductor crystal 202 inserted in the support substrate 201 are sandwiched between Teflon (registered trademark) sheets having a predetermined thickness (eg, 0.5 mm) so as to be placed in a high-frequency magnetic field. When a high frequency of 100 to 200 kHz is applied to an induction coil placed on a Teflon (registered trademark) sheet, an induced current is generated about 0.3 mm from the surface (side surface) of the thermoelectric semiconductor crystal 202, and the surface is reached in about 2 seconds. Reaches about 200 ° C., and the polyester resin sheet around the through hole melts. Thereafter, the application of high frequency is stopped, and the molten polyester resin sheet is solidified to fix the thermoelectric semiconductor crystal 202 to the support substrate 201.

  (2) A polyester sheet having a thickness of 0.3 mm is used as the support substrate 201. The hot melt sheet material 205 is the same as in the embodiment. As a heating means for melting the hot melt sheet material 205, a laser device such as a carbon dioxide laser device is used, and the hot melt sheet material 205 is locally applied by applying a laser beam to the periphery of the through hole 206 of the support substrate 201. Melt. In this case, in order to improve the absorption rate of the laser beam, the polyester sheet is preferably compounded with alumina powder or the like in advance using a kneader. Further, instead of using the hot melt sheet material 205, hot melt powder may be placed around the through hole 206 by thermal spraying or the like.

  (3) A PPS (polyphenylene sulfide) resin sheet having a thickness of 0.3 mm is used as the support substrate 201. The hot melt sheet material 205 is the same as in the embodiment. The heating means for melting the hot melt sheet material 205 is the same as (2). PPS resin has a glass transition temperature of 88 ° C., and has the property of being insoluble by crosslinking and crystallization when heated to 225 ° C. or higher. Therefore, the periphery of the through hole 206 of the support substrate 201 is irradiated with laser light to be heated to about 90 ° C. to be welded, and then a cream solder paste made of SnZn is applied to the upper electrode 203 and the lower electrode 204 to a predetermined thickness. (For example, 50 μm) After coating and drying, heating is performed at 230 ° C. in a vacuum reflow furnace to perform crosslinking. Thereby, the thermoelectric module which has heat resistance is obtained.

It is a front view of the thermoelectric module of the embodiment of the present invention. It is a figure which shows a part of manufacturing process of the thermoelectric module of embodiment of this invention. It is a figure which shows the remaining part of the manufacturing process of the thermoelectric module of embodiment of this invention. It is a figure which shows the structure of the conventional general thermoelectric module. It is a figure which shows the structure of the thermoelectric module which has a structure where a support substrate hold | maintains a thermoelectric semiconductor crystal in the approximate center. It is a figure for demonstrating the problem of the thermoelectric module shown in FIG.

Explanation of symbols

201 ... support substrate, 202n ... n-type thermoelectric semiconductor crystal, 202p ... p-type thermoelectric semiconductor crystal, 203 ... upper electrode, 204 ... lower electrode, 205 ... hot melt sheet material 206 through-holes.

Claims (8)

In the thermoelectric module having a structure in which the substantially central portion of the thermoelectric semiconductor crystal is held by the substrate and the electrodes are connected to both end faces of the thermoelectric semiconductor crystal,
The thermoelectric module, wherein the substrate and the thermoelectric semiconductor crystal are fixed by thermal welding. The thermoelectric module according to claim 1, wherein
A thermoelectric module characterized in that a thermal welding material is bonded to the surface of the substrate and is fixed by thermal welding of the thermal welding material. The thermoelectric module according to claim 1, wherein
The thermoelectric module, wherein the substrate is made of a thermoplastic resin and fixed by thermal welding of the substrate itself. The thermoelectric module according to claim 3, wherein
The thermoelectric module according to claim 1, wherein the thermoplastic resin has a characteristic of crosslinking when reaching a predetermined temperature higher than the heat welding temperature. Inserting a thermoelectric semiconductor crystal into the through hole of the substrate having a plurality of through holes;
A method of manufacturing a thermoelectric module, comprising: heat-welding the substrate and the thermoelectric semiconductor crystal by heating the substrate. In the manufacturing method of the thermoelectric module of Claim 5,
A method of manufacturing a thermoelectric module, comprising a step of bonding a heat-welding material to a surface of the substrate before heating the substrate. In the manufacturing method of the thermoelectric module of Claim 5,
A method for manufacturing a thermoelectric module, wherein a substrate made of a thermoplastic resin is used and the substrate itself is thermally welded. In the manufacturing method of the thermoelectric module in any one of Claims 5-7,
A method of manufacturing a thermoelectric module, comprising the step of soldering an electrode in vacuum to a thermoelectric semiconductor crystal thermally welded to the substrate.

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