JP2005174985A - Thermoelement - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress heat distortion of a diaphragm in a thermoelement having: the diaphragm; a thermoelectric semiconductor crystal fixed in a state in which it penetrates the diaphragm; and electrodes connected to both end faces of the thermoelectric semiconductor crystal. <P>SOLUTION: The thermoelement 1 is provided with the diaphragm 2, the thermoelectric semiconductor crystal 3 fixed to the diaphragm 1 in the state that it penetrates the diaphragm 2, the upper electrode 4 bonded to an upper end of the thermoelectric semiconductor crystal 3 by solder, and a lower electrode 5 bonded to a lower end of the thermoelectric semiconductor crystal 3 by solder. A notch 21 is made near an edge of the diaphragm 2. Since elasticity of the diaphragm 2 is absorbed by the notch 21, heat distortion of the diaphragm 1 is suppressed. Thus, damage of the thermoelectric semiconductor crystal 3 and peeling of the electrodes 4 and 5 are prevented, and therefore life of the thermoelement 1 is prolonged. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a thermoelectric element utilizing the Peltier effect or Seebeck effect, and more particularly to a thermoelectric element having improved durability against thermal strain.

  Conventionally, thermoelectric elements including thermoelectric semiconductor crystals such as bismuth and tellurium have been used in cooling devices such as LSIs and CPUs of computers and electronic heating and cooling devices such as heat-retaining refrigerators. FIG. 5 shows such a conventional thermoelectric element disclosed in Patent Document 1. In FIG. In this figure, (a) is a front view and (b) is a perspective view.

  This thermoelectric element comprises a thermoelectric semiconductor crystal 101 and an upper substrate 102 and a lower substrate 103 that are made of a material having thermal conductivity and electrical insulation, such as alumina ceramics, and hold the thermoelectric semiconductor crystal 101 from above and below. Yes. In the thermoelectric semiconductor crystal 101, n-type thermoelectric semiconductor crystals 101n and p-type thermoelectric semiconductor crystals 101p are alternately arranged, and a copper plate or the like is provided between upper and lower end faces of the n-type thermoelectric semiconductor crystal 101n and the p-type thermoelectric semiconductor crystal 101p. The configured upper electrode 104 and lower electrode 105 are soldered, and the n-type thermoelectric semiconductor crystal 101n and the p-type thermoelectric semiconductor crystal 101p are alternately electrically connected in series. A DC power source is connected to the lower electrode 105 at both ends via lead wires 106 and 107. When a current flows from the DC power source, an electrode on one end face side (upper electrode 104 in the figure) is caused by the Peltier effect. Heat absorption occurs, and heat generation occurs at the other end face side electrode (lower electrode 105 in the figure). The upper and lower electrodes 104, 105 are bonded and fixed to the substrates 102, 103. In this thermoelectric element, for example, an object to be cooled is disposed on the upper substrate 102 that is the heat absorption side, and a heat exchange member that is a combination of a heat sink and a fan is disposed under the lower substrate 103 that is the heat dissipation side. Used.

  However, in the above-described thermoelectric element, when one substrate is cooled and contracted due to heat absorption, and the other substrate expands due to heat dissipation due to heat dissipation, the thermoelectric semiconductor crystals 101n and 101p and the upper electrode 104, The connection with the lower electrode 105 may be disconnected. In addition, since the substrates 102 and 103 are interposed between the thermoelectric semiconductor crystal 101 and the heat exchange member, the heat exchange efficiency is reduced due to the thermal resistance of the substrates 102 and 103.

  Therefore, the applicant of the present application has proposed a thermoelectric element having a double-sided skeleton structure without upper and lower substrates as shown in FIG. 6 (Patent Documents 2 and 3). This thermoelectric element has a structure in which a thermoelectric semiconductor crystal 202 composed of a p-type thermoelectric semiconductor crystal 202p and an n-type thermoelectric semiconductor crystal 202n is fixed to the partition plate 201 in a penetrating state. An upper electrode 203 made of a copper plate or the like is bonded to the upper surface of the thermoelectric semiconductor crystal 202, and a lower electrode 204 made of a copper plate or the like is bonded to the lower surface by solder. These electrodes (upper electrode 203 In addition, the p-type thermoelectric semiconductor crystal 202p and the n-type thermoelectric semiconductor crystal 202n are alternately electrically connected in series by the lower electrode 204). Lead wires (not shown) are connected to the electrodes at both ends of the series connection. When a current is supplied from a DC power source in a predetermined direction, heat is absorbed by the upper electrode 203 due to the Peltier effect, and the lower electrode 204 A fever occurs. By supplying a current in the opposite direction, the lower electrode 204 can absorb heat and the upper electrode 203 can generate heat.

  According to this thermoelectric element, since the partition plate 201 can prevent air convection between the cooling side and the heat radiation side, a large temperature difference can be realized as compared with the conventional type. In addition, since the partition plate 201 holds the thermoelectric semiconductor crystal substantially at the center and the upper and lower electrodes have a flexible structure that is not bonded or welded to a substrate such as alumina ceramics, the drive voltage is higher than that of a conventional rigid structure. When controlled by a control method that is greatly affected by thermal distortion such as on / off control or polarity reversal control of drive voltage, an unparalleled long life could be realized. That is, in the room temperature room, for example, when the upper end of the upper electrode 202 on the heat absorption side is maintained at about −10 ° C. to 0 ° C. and the lower end of the lower electrode 203 on the heat dissipation side is maintained at about 50 ° C., the partition plate 201 is almost Since the partition plate and the flexible structure sufficiently absorb the thermal stress, the long life can be realized.

Further, the holding power of the thermoelectric semiconductor crystal 202 possessed by the partition plate 201 and the flexible structure of the electrode portion are limited to the substrate size; 4 cm × 4 cm in the conventional type, but the partition plate size: 7 cm × 7 cm. Can now be manufactured. In addition, it has become possible to manufacture a partition plate size of 10 cm × 10 cm and 12 cm × 12 cm. And the uses have also diversified.
JP 63-110680 A (FIG. 1) Japanese Patent Laid-Open No. 10-178217 JP 2000-124509 A

  In general, when a thermoelectric element is used as a cooling device or a heating device, for example, as disclosed in Patent Document 3, it is incorporated in a jacket shape, or the thermoelectric element is sandwiched between a cooling plate and a heat radiating plate to improve heat conduction. To tighten with considerable pressure. Since the thermoelectric elements disclosed in Patent Documents 2 and 3 have a flexible structure, they are used in a state where they are pressed from above and below with a large pressure.

At this time, when both the heat absorbing part and the heat radiating part are used for cooling or heating a high temperature target exceeding normal temperature, or when the heat radiating part is cooled with cooling water and the heat absorbing part is used for ultra-low temperature cooling (for example, the heat radiating part is set to 0). In the case of cooling with cooling water close to ℃ and cooling the endothermic part at around -50 ℃, or in the case of ultra-low temperature cooling of -60 ℃ to -80 ℃ by arranging two or more thermoelectric elements Is the linear expansion coefficient of copper, which is the material of the electrode; 16.6 × 10 ^-6 m / K, whereas the polyester-based resin, which is the material of the partition plate, has a linear expansion coefficient (in the thickness direction of the plate). ); 4.0 × 10 ⁻⁵ m / K, lateral direction (direction parallel to the plane of the plate); 7.04 × 10 ⁻⁵ m / K, and the linear expansion coefficient of the partition plate is about 5 to 5 of the linear expansion coefficient of the electrode. Since it is about 20 times larger, the expansion or contraction in the vicinity of the edge of the partition plate 201 cannot be ignored. This point will be described with reference to FIGS.

7A shows a state in which a thermoelectric element having the same configuration as in FIG. 6 is not energized at normal temperature (normal temperature: in this specification, the room temperature is controlled to about 25 ° C. ± 3 ° C.). FIG. 4B is a diagram illustrating expansion and contraction of the partition plate 201 in a state where the energization is performed at room temperature, the heat absorption side is lower than room temperature, and the heat dissipation side is higher than room temperature, that is, in a normal use state. In FIG. 7B, the outward arrow represents expansion, and the inward arrow represents contraction. Here, the partition plate 201 is made of unilate (registered trademark: polyester resin), and its size is 7 cm × 7 cm × 0.8 mm. The thermoelectric semiconductor crystal 202 has a diameter of 2.3 mm and a length of 2.3 mm. Furthermore, the electrodes 203 and 204 are made of copper, and the size thereof is 5.5 mm × 2.5 mm × 300 μm. In addition, the linear expansion coefficient of the unilate is longitudinal direction: 4.0 × 10 ⁻⁵ m / K, lateral direction: 7.04 × 10 ⁻⁵ m / K.

In FIG. 7B, the room temperature is 25 ° C., the heat dissipating part (not shown) is maintained at about 50 ° C. by fins and fans, etc., and the cooling part (heat absorption side) not shown is cooled at −10 ° C. to 0 ° C. If it is, the temperature of the partition plate 201 is 20 ° C to 30 ° C. Therefore, the expansion of the electrode 204 on the heat dissipation side is 5.5 mm x (50 ° C-25 ° C) x 16.6 x 10 ^-6 ≈ 2.28 µm, and the shrinkage of the electrode 203 on the heat absorption side is 5.5 x (0 ° C-25 ° C) x 16.6 x 10 ^-6 ≒ -2.28μm. On the other hand, the expansion at a position 21 mm from the center of the partition plate 201 is 21 mm × (30 ° C.−25 ° C.) × 7.04 × 10 ⁻⁵ ≈7.40 μm. The cumulative expansion value of the heat absorption side electrode 203 at the same position is −3.5 × 2.28≈−7.98 μm, and the cumulative expansion value of the heat radiation side electrode 204 is 3.5 × 2.28≈7.98 μm. The expansion and contraction of the electrode 204 on the heat dissipation side is canceled out, and the accumulated value becomes almost zero. Furthermore, at the position 30 mm from the center of the partition plate 201, the expansion of the partition plate 201 is 10.56 μm, but even at this position, the cumulative expansion and contraction values of the heat absorption side electrode 203 and the heat dissipation side electrode 204 are offset and almost equal. It becomes zero. By expanding and contracting in this way, the partition plate 201 is bent toward the heat radiation side, and a slight thermal distortion occurs.

  FIG. 8 shows that the thermoelectric element shown in FIG. 7A is energized at a temperature different from the general usage as shown in FIG. 7B, that is, the normal temperature in FIG. In a higher state, FIG. 8B shows the expansion and contraction of the partition plate 201 when energized at room temperature and used on the heat absorption side and the heat radiation side below room temperature. Hereinafter, the expansion and contraction of the electrodes 203 and 204 and the partition plate 210 in these cases will be described.

In FIG. 8 (a), when the room temperature is 25 ° C., the heat absorption part (not shown) is maintained at about 50 ° C., and the heating part (heat radiation side) not shown is used as a heating device for heating at 100 ° C., The temperature of the plate 201 is about 75 ° C. between 50 ° C. and 100 ° C. Therefore, the expansion of electrode 204 on the heat dissipation side is 5.5 mm x (100 ° C-25 ° C) x 16.6 x 10 ^-6 ≈ 6.85 µm, and the expansion of electrode 203 on the heat absorption side is 5.5 mm x (50 ° C-25 ° C) x 16.6 × 10 ^-6 ≒ 2.28μm. On the other hand, the expansion at a position 21 mm from the center of the partition plate 201 is 21 mm × (75 ° C.-25 ° C.) × 7.04 × 10 ⁻⁵ ≈73.92 μm. Also, the cumulative expansion value of the heat absorption side electrode 203 at the same position is 3.5 × 6.85≈23.98 μm, and the cumulative expansion value of the heat radiation side electrode 204 is 3.5 × 2.28≈7.98 μm, so the heat absorption side electrode 203 and the heat radiation side The accumulated expansion value of the electrode 204 is 31.96 μm. Furthermore, the expansion of the partition plate 201 is 105.60 μm at a position 30 mm from the center of the partition plate 201. Further, the cumulative value of expansion and contraction of the heat absorption side electrode 203 at this position is 5 × 6.85≈34.25 μm, and the cumulative value of expansion and contraction of the heat dissipation side electrode 204 is 5 × 2.28≈11.40 μm. And the cumulative value of expansion and contraction of the electrode 204 on the heat radiation side is 45.65 μm. Therefore, the difference from the expansion of the partition plate 201 is about −59.95 μm.

In FIG. 8 (b), when the room temperature is 25 ° C., the heat radiating portion (not shown) is cooled with 0 ° C. cooling water, and the heat absorption portion (not shown) is cooled at −50 ° C. The temperature of 201 is about −25 ° C. between 0 ° C. and −50 ° C. Therefore, the shrinkage of the electrode 204 on the heat dissipation side is 5.5 mm x (0 ° C-25 ° C) x 16.6 x 10 ^-6 ≒ -2.28 µm, and the shrinkage of the electrode 203 on the heat absorption side is 5.5 mm x (-50 ° C-25 ° C) × 16.6 × 10 ⁻⁶ ≒ −6.85μm. On the other hand, the expansion at a position 21 mm from the center of the partition plate 201 is 21 mm × (−25 ° C.−25 ° C.) × 7.04 × 10 ⁻⁵ ≈−73.92 μm. Further, the cumulative expansion value of the heat absorption side electrode 203 at the same position is 3.5 × (−6.85) ≈−23.98 μm, and the cumulative expansion value of the heat radiation side electrode 204 is 3.5 × (−2.28) ≈−7.98 μm. The cumulative expansion value of the heat absorption side electrode 203 and the heat dissipation side electrode 20 is −31.96 μm. Furthermore, the expansion of the partition plate 201 is −105.60 μm at a position 30 mm from the center of the partition plate 201. In this position, the cumulative expansion / contraction value of the heat absorption side electrode 203 is 5 × (−6.85) ≈−34.25 μm, and the cumulative expansion / contraction value of the heat radiation side electrode 204 is 5 × (−2.28) ≈−11.40 μm. Therefore, the cumulative expansion / contraction value of the heat absorption side electrode 203 and the heat dissipation side electrode 204 is −45.65 μm. Therefore, the difference from the expansion of the partition plate 201 is about 59.95 μm.

From the above description with reference to FIG. 7 and FIG. 8, the following (a) to (c) can be understood. (B) Normal use, that is, energized at normal temperature, the heat absorption side is lower than normal temperature, and the heat dissipation side is higher than normal temperature When used so as to be higher, since the expansion and contraction of the electrodes 203 and 204 and the partition plate 201 is relatively small, the thermal stress applied to the partition plate 201 and the electrodes 203 and 204 is relatively small.
(B) In the usage pattern in which the heat absorption part and the heat radiation part are higher than room temperature as shown in FIG. 8A, or in the usage pattern in which the heat absorption part and the heat radiation part are higher than room temperature as shown in FIG. The thermal stress applied to the plate 201 becomes so large that it cannot be ignored.
(C) The expansion and contraction of the partition plate 201 is increased near the edge far from the center, and therefore the thermal stress is increased near the edge.

  If the size of the partition plate 201 is increased to 10 cm × 10 cm or 12 cm × 12 cm, the thermal stress in the vicinity of the edge further increases, so that the thermal strain of the partition plate 201 also increases. Due to this large thermal strain, the junction between the thermoelectric semiconductor crystals 202n and 202p and the electrodes 203 and 204 may be disconnected. In addition, the thermoelectric semiconductor crystal 202 made of a material that is brittle compared to the partition plate 210 and the electrodes 203 and 204 may be damaged.

  The present invention has been made in view of such problems, and is connected to a partition plate, a thermoelectric semiconductor crystal fixed in a state of being penetrated through the partition plate, and both end faces of the thermoelectric semiconductor crystal. An object of the present invention is to suppress thermal distortion of a partition plate in a thermoelectric element including an electrode.

  A thermoelectric element according to the present invention comprises a partition plate, a thermoelectric semiconductor crystal fixed to the partition plate in a state of passing through the partition plate, and electrodes connected to both end faces of the thermoelectric semiconductor crystal. In the thermoelectric element, a plurality of cuts are provided in the vicinity of the edge of the partition plate. With this configuration, the expansion and contraction of the partition plate of the thermoelectric element is absorbed by the cut, so that thermal distortion of the partition plate is suppressed.

  Here, since the expansion and contraction of the partition plate increases toward the outside from the center portion of the partition plate, the cut is provided at least near the edge. Further, it is desirable to provide as much as possible within a range not impairing the mechanical strength. Further, the notch may be formed so as to cover the edge of the partition plate, or may be formed so as not to be applied to the edge. Further, it may be formed between adjacent thermoelectric semiconductor crystals.

  According to the present invention, in a thermoelectric element comprising a partition plate, a thermoelectric semiconductor crystal fixed to the partition plate in a state of passing through the partition plate, and electrodes fixed to both ends of the thermoelectric semiconductor crystal, the partition plate Since the notch is formed in the slit, the expansion and contraction of the partition plate can be absorbed by the notch and the thermal distortion of the partition plate can be suppressed. For this reason, breakage of the thermoelectric semiconductor crystal and peeling of the electrode due to thermal distortion of the partition plate are prevented. Therefore, the lifetime of the thermoelectric element can be further increased, and it is particularly effective for extending the lifetime of the thermoelectric element having a large partition plate.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[First Embodiment]
1 to 3 are diagrams showing the configuration of the thermoelectric element according to the first embodiment of the present invention. Here, FIG. 1A is a plan (top) view, and FIG. 1B is a cross-sectional view taken along line XX in FIG. FIG. 2 is a bottom view, and FIG. 3 is a plan view showing a state in which the planar electrode is removed from FIG.

  As shown in FIGS. 1A, 1 </ b> B, 2, and 3, the thermoelectric element 1 includes a partition plate 2 and a thermoelectric semiconductor crystal 3 that is fixed to the partition plate 1 in a state of penetrating the partition plate 2. And an upper electrode 4 joined to the upper end of the thermoelectric semiconductor crystal 3 by solder, and a lower electrode 5 joined to the lower end of the thermoelectric semiconductor crystal 3 by solder. The thermoelectric semiconductor crystal 3 is composed of an n-type thermoelectric semiconductor crystal and a p-type thermoelectric semiconductor crystal as in FIG. 5 or FIG. 6, which are alternately arranged on the partition plate 1 and electrically connected in series. The partition plate 2 is made of a polyester resin such as Unilate (registered trademark), and its size is approximately 7 cm × 7 cm × 0.8 mm. The size of the thermoelectric semiconductor crystal 3 is 2.3 mm in diameter and 2.3 mm in length. The upper electrode 4 and the lower electrode 5 are both made of copper and have a size of 5.5 mm × 2.5 mm × 300 μm. However, the thermoelectric semiconductor crystal 3 and the electrodes 4 and 5 are shown smaller for convenience of illustration.

  In the thermoelectric element 1 according to the present embodiment, one notch 21 is provided for each side near the corners on the four sides of the partition plate 2. The shape of the notch 21 is a strip shape, that is, a planar shape (a shape viewed from the upper surface of the partition plate 2) is an elongated rectangle, and the outer side reaches the edge of the partition plate 2. That is, it is formed from the edge to the inside so as to cover the edge of the partition plate 2.

  When the thermoelectric element 1 configured as described above is energized from a DC power source (not shown) at normal temperature, both the heat absorption side and the heat dissipation side expand and contract according to the temperature difference between the temperature and normal temperature. Here, the expansion and contraction in the left-right direction in FIG. 1 will be described. As described with reference to FIGS. 7 and 8, the expansion and contraction of the partition plate 2 in the left-right direction increases away from the center of the partition plate 1 and approaches the edge. At this time, in the thermoelectric element 1 shown in FIG. 1, the expansion and contraction on the line XX of the partition plate 2 becomes discontinuous at the cuts 21. That is, when there is no notch 21, the expansion / contraction amount of the partition plate 2 increases as it goes from the center to the left and right along the line XX. It will be in a reset state. As a result, when there is no notch 21, it becomes possible to reduce the amount of expansion / contraction near the edge where the amount of expansion / contraction becomes maximum. The same applies to a line that is orthogonal to the line XX and passes through the notch 21. As a result, since the thermal strain of the partition plate 2 is suppressed and the stress applied to the thermoelectric semiconductor crystal 3 and the electrodes 4 and 5 is reduced, damage to the thermoelectric semiconductor crystal 3 and peeling of the electrodes 4 and 5 can be prevented. The lifetime of the element 1 can be increased.

  In the vicinity of the two corners of the partition plate 2 (left and right corners in FIG. 1), crimping terminal mounting holes 22 and 23 made of strip-shaped cuts are provided. The crimping terminal mounting holes 22 and 23 are used for connecting lead wires to the thermoelectric element 1. In addition, a triangular notch 24 provided at one corner of the partition plate 2, a semicircular notch 25 provided at the center of the right edge of the notch 24, and an edge provided with a semicircular notch 25 The holes 26 provided in the vicinity of the edge to be used are all used when the thermoelectric element 1 is manufactured. However, the holes 26 are formed in the horizontal direction of the partition plate 2 in FIG. It works to suppress thermal distortion.

[Second Embodiment]
FIG. 4 is a diagram showing the configuration of the thermoelectric element according to the second embodiment of the present invention. This figure is a plan view showing a state in which the electrode on the plane side is removed. In this figure, the same or corresponding components as those in FIG. 3 are denoted by the reference numerals used in FIG. In the present embodiment, the electrode patterns on the plane side and the bottom side are the same as those in FIGS.

  In the present embodiment, the arrangement of the cuts is different from that of the first embodiment. That is, in the first embodiment, adjacent to each other in the vicinity of the upper and lower edges (sides) extending in the horizontal direction without providing the notches formed in pairs near the left and right edges extending in the vertical direction. A cut 27 was formed between the thermoelectric semiconductor crystals 3 to be formed. The planar shape of the cut 27 is substantially rectangular, is formed substantially parallel to the upper and lower edges extending in the lateral direction, and is shorter than the cut 21. Further, in the horizontal direction of FIG. 4, the cuts 27 are formed not only near the edge of the partition plate 2 but also near the center of the partition plate 2, unlike the first embodiment. For this reason, in the lateral direction, thermal strain is further reduced as compared with the first embodiment. Further, since the notch 27 is provided so as to be in contact with the thermoelectric semiconductor crystal 3 that is the weakest against thermal strain, the thermal stress applied to the thermoelectric semiconductor crystal 3 is suppressed to the maximum, and as a result, the thermoelectric semiconductor crystal 3 is damaged. Further, the peeling of the electrodes 4 and 5 can be minimized, and the life of the thermoelectric element 1 can be extended.

  In the first and second embodiments described above, the size of the partition plate 2 is 7 cm × 7 cm. However, the present invention can be similarly applied to a thermoelectric element having a larger size partition plate. As the size of the partition plate is larger, the thermal strain suppressing effect according to the present invention is more effectively exhibited. Further, it is desirable to provide as many cuts as possible within a range that does not impair the mechanical strength of the partition plate 1. Furthermore, the shape of the cut is not limited to a rectangle, and may be another shape. In the first and second embodiments, the cuts 21 are formed so as to cover the edges of the partition plate 2. However, the cuts 21 may be formed further from the inside of the edges toward the inside so as not to cover the edges. .

It is the top view and sectional drawing of the thermoelectric element of the 1st Embodiment of this invention. It is a bottom view of the thermoelectric element of the 1st Embodiment of this invention. It is a top view which shows a mode that the electrode of the plane side was removed from the thermoelectric element of the 1st Embodiment of this invention. It is a top view which shows a mode that the electrode of the plane side was removed from the thermoelectric element of the 2nd Embodiment of this invention. It is the front view and perspective view of the conventional thermoelectric element. It is a front view of the thermoelectric element of a both-sides skeleton structure. It is a figure for demonstrating expansion / contraction of the partition plate at the time of normal use of the thermoelectric element shown in FIG. It is a figure for demonstrating expansion / contraction of the partition plate at the time of use different from the normal use of the thermoelectric element shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Thermoelectric element, 2 ... Partition plate, 3 ... Thermoelectric semiconductor crystal, 4, 5 ... Electrode, 21, 27 ... Cut.

Claims (6)

  A thermoelectric element comprising: a partition plate; a thermoelectric semiconductor crystal fixed to the partition plate in a state of penetrating the partition plate; and an electrode connected to both end faces of the thermoelectric semiconductor crystal. A thermoelectric element characterized in that a plurality of cuts are provided in the vicinity.   The thermoelectric element according to claim 1, wherein the cut is formed so as to extend over the edge.   The thermoelectric element according to claim 1, wherein the cut is formed so as not to reach the edge.   The thermoelectric element according to claim 1, wherein the cut is formed between adjacent thermoelectric semiconductor crystals.   The thermoelectric element according to claim 1, wherein the planar shape of the partition plate is substantially rectangular. The thermoelectric element according to claim 1, wherein the planar shape of the cut is substantially rectangular.

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