JP4984206B2 - Diamond-like carbon film-coated member and method for producing the same - Google Patents

Diamond-like carbon film-coated member and method for producing the same Download PDF

Info

Publication number
JP4984206B2
JP4984206B2 JP2005219597A JP2005219597A JP4984206B2 JP 4984206 B2 JP4984206 B2 JP 4984206B2 JP 2005219597 A JP2005219597 A JP 2005219597A JP 2005219597 A JP2005219597 A JP 2005219597A JP 4984206 B2 JP4984206 B2 JP 4984206B2
Authority
JP
Japan
Prior art keywords
film
nitrogen
base material
diamond
containing chromium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2005219597A
Other languages
Japanese (ja)
Other versions
JP2007031797A (en
Inventor
史人 鈴木
征寛 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Thermotech Co Ltd
Original Assignee
Dowa Thermotech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dowa Thermotech Co Ltd filed Critical Dowa Thermotech Co Ltd
Priority to JP2005219597A priority Critical patent/JP4984206B2/en
Publication of JP2007031797A publication Critical patent/JP2007031797A/en
Application granted granted Critical
Publication of JP4984206B2 publication Critical patent/JP4984206B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Physical Vapour Deposition (AREA)

Description

本発明は、ダイヤモンドライクカーボン皮膜被覆部材およびその製造方法に関し、特に、最表面にダイヤモンドライクカーボン(diamond−like carbon(ダイヤモンド状カーボン))皮膜が形成されて機械部品や金型などに使用される部材およびその製造方法に関する。   The present invention relates to a diamond-like carbon film-coated member and a method for producing the same, and in particular, a diamond-like carbon film is formed on the outermost surface and used for machine parts, molds, and the like. The present invention relates to a member and a manufacturing method thereof.

ダイヤモンドライクカーボン(以下、「DLC」という)皮膜は、気相合成法により合成されるダイヤモンドに類似した高硬度、電気絶縁性などの特性を有するカーボン皮膜である。DLC皮膜の構造は、通常、非晶質(アモルファス)構造であり、ダイヤモンド結合やグラファイト結合などを有している。DLD皮膜は、硬く(例えば、マイクロビッカース硬度Hv1000〜5000)、耐摩耗性に優れた皮膜であるため、ハードディスク用記録媒体や磁気記録用ヘッドの他、各種の機械部品を被覆するために使用されている。このDLC皮膜と母材との密着性を向上させるため、母材とDLC皮膜の間に炭化チタニウム層からなる中間層を介在させる方法(例えば、特許文献1参照)、母材を水素を含まない第1のDLC皮膜で被覆した上に水素を含む第2のDLC皮膜で被覆する方法(例えば、特許文献2参照)、母材をカーボンイオン注入層で被覆した上に炭素と珪素を含むガスによるプラズマガスを用いてDLC皮膜を形成する方法(例えば、特許文献3参照)、母材を柔らかい膜と硬い膜が交互に積層されたDLC多層膜で被覆する方法(例えば、特許文献4参照)などの様々な方法が提案されている。   A diamond-like carbon (hereinafter referred to as “DLC”) film is a carbon film having characteristics such as high hardness and electrical insulation similar to diamond synthesized by a vapor phase synthesis method. The structure of the DLC film is usually an amorphous structure, and has a diamond bond or a graphite bond. Since the DLD film is hard (for example, micro Vickers hardness Hv1000 to 5000) and excellent in wear resistance, it is used to coat various mechanical parts in addition to recording media for hard disks and magnetic recording heads. ing. In order to improve the adhesion between the DLC film and the base material, a method in which an intermediate layer composed of a titanium carbide layer is interposed between the base material and the DLC film (see, for example, Patent Document 1), the base material does not contain hydrogen. A method of coating with a second DLC film containing hydrogen on the first DLC film (see, for example, Patent Document 2), a gas containing carbon and silicon on a base material coated with a carbon ion implantation layer A method of forming a DLC film using plasma gas (for example, see Patent Document 3), a method of covering a base material with a DLC multilayer film in which soft films and hard films are alternately laminated (for example, see Patent Document 4), etc. Various methods have been proposed.

国際公開WO92/006234号公報(第3頁)International Publication WO92 / 006234 (Page 3) 特開2000−128516号公報(段落番号0004−0005)JP 2000-128516 A (paragraph numbers 0004-0005) 特開2000−319784号公報(段落番号0008−0009)JP 2000-319784 A (paragraph numbers 0008-0009) 特開2004−269991号公報(段落番号0007−0008)JP 2004-269991 A (paragraph numbers 0007-0008)

しかし、DLC皮膜は硬い皮膜であり、合金鋼、炭素鋼、ステンレス鋼、チタン、チタン合金、軟鉄や鋳鉄などの鉄、アルミニウム、アルミニウム合金などからなる母材とDLC皮膜との硬さや熱膨張係数の差や組織の相違が大きいため、上述した特許文献1〜4の方法では、母材とDLC皮膜との密着性を十分に向上させることができない場合がある。   However, the DLC film is a hard film, and the hardness and thermal expansion coefficient of the base material made of alloy steel, carbon steel, stainless steel, titanium, titanium alloy, iron such as soft iron and cast iron, aluminum, aluminum alloy, and the DLC film. Therefore, the methods described in Patent Documents 1 to 4 described above may not be able to sufficiently improve the adhesion between the base material and the DLC film.

したがって、本発明は、このような従来の問題点に鑑み、合金鋼などからなる母材とDLC皮膜との密着性が良好なダイヤモンドライクカーボン皮膜被覆部材およびその製造方法を提供することを目的とする。   Therefore, in view of such conventional problems, an object of the present invention is to provide a diamond-like carbon film-coated member having good adhesion between a base material made of alloy steel and the like and a DLC film, and a method for producing the same. To do.

本発明者らは、上記課題を解決するために鋭意研究した結果、合金鋼などからなる母材を窒素含有クロム皮膜で被覆した後、この窒素含有クロム皮膜をDLC皮膜で被覆することにより、母材とDLC皮膜との密着性を向上させることができることを見出し、本発明を完成するに至った。   As a result of intensive studies to solve the above problems, the present inventors have coated a base material made of alloy steel or the like with a nitrogen-containing chromium film, and then coated the nitrogen-containing chromium film with a DLC film. It has been found that the adhesion between the material and the DLC film can be improved, and the present invention has been completed.

すなわち、本発明によるダイヤモンドライクカーボン皮膜被覆部材は、母材上に窒素含有クロム皮膜が形成され、この窒素含有クロム皮膜上にダイヤモンドライクカーボン皮膜が形成されていることを特徴とする。このダイヤモンドライクカーボン皮膜被覆部材において、母材と窒素含有クロム皮膜の間にクロム皮膜が形成されているのが好ましい。また、窒素含有クロム皮膜が、窒素および窒化クロムの少なくとも一方がクロム皮膜中に略均一に分散した皮膜、あるいは、クロム皮膜中の膜厚方向中央部の窒素濃度がその両側の部分の窒素濃度より高い皮膜であるのが好ましい。   That is, the diamond-like carbon film covering member according to the present invention is characterized in that a nitrogen-containing chromium film is formed on a base material, and the diamond-like carbon film is formed on the nitrogen-containing chromium film. In the diamond-like carbon film-coated member, a chromium film is preferably formed between the base material and the nitrogen-containing chromium film. In addition, the nitrogen-containing chromium film is a film in which at least one of nitrogen and chromium nitride is dispersed substantially uniformly in the chromium film, or the nitrogen concentration in the central portion in the film thickness direction in the chromium film is higher than the nitrogen concentration on both sides thereof A high film is preferred.

また、本発明によるダイヤモンドライクカーボン皮膜被覆部材の製造方法は、母材上に窒素含有クロム皮膜を形成した後、この窒素含有クロム皮膜上にダイヤモンドライクカーボン皮膜を形成することを特徴とする。このダイヤモンドライクカーボン皮膜被覆部材の製造方法において、母材上に窒素含有クロム皮膜を形成する前に、母材上にクロム皮膜を形成し、その後、窒素含有クロム皮膜を形成するのが好ましい。また、窒素含有クロム皮膜が、クロムターゲットを使用してアルゴンと窒素を含む雰囲気中でスパッタリングすることによって形成されるのが好ましく、ダイヤモンドライクカーボン皮膜が、カーボンターゲットを使用してスパッタリングすることによって形成されるのが好ましい。また、窒素含有クロム皮膜が、窒素および窒化クロムの少なくとも一方がクロム皮膜中に略均一に分散した皮膜、あるいは、クロム皮膜中の膜厚方向中央部の窒素濃度がその両側の部分の窒素濃度より高い皮膜であるのが好ましい。   The method for producing a diamond-like carbon film-coated member according to the present invention is characterized in that after a nitrogen-containing chromium film is formed on a base material, a diamond-like carbon film is formed on the nitrogen-containing chromium film. In this method for producing a diamond-like carbon film-coated member, it is preferable to form a chromium film on the base material before forming the nitrogen-containing chromium film on the base material, and then form the nitrogen-containing chromium film. The nitrogen-containing chromium film is preferably formed by sputtering in an atmosphere containing argon and nitrogen using a chromium target, and the diamond-like carbon film is formed by sputtering using a carbon target. Preferably it is done. In addition, the nitrogen-containing chromium film is a film in which at least one of nitrogen and chromium nitride is dispersed substantially uniformly in the chromium film, or the nitrogen concentration in the central portion in the film thickness direction in the chromium film is higher than the nitrogen concentration on both sides thereof A high film is preferred.

本発明によれば、合金鋼などからなる母材とDLC皮膜との密着性が良好なダイヤモンドライクカーボン皮膜被覆部材を製造することができる。   ADVANTAGE OF THE INVENTION According to this invention, the diamond-like carbon film coating | coated member with favorable adhesiveness of the base material consisting of alloy steel etc. and a DLC film can be manufactured.

本発明によるダイヤモンドライクカーボン皮膜被覆部材の実施の形態は、母材上に窒素含有クロム皮膜が形成され、この窒素含有クロム皮膜上にDLC皮膜が形成されている。この母材として、合金鋼、炭素鋼、ステンレス鋼、チタン、チタン合金、軟鉄や鋳鉄などの鉄、アルミニウム、アルミニウム合金などからなる母材を使用することができる。   In the embodiment of the diamond-like carbon film-coated member according to the present invention, a nitrogen-containing chromium film is formed on a base material, and a DLC film is formed on the nitrogen-containing chromium film. As the base material, a base material made of alloy steel, carbon steel, stainless steel, titanium, titanium alloy, iron such as soft iron or cast iron, aluminum, aluminum alloy, or the like can be used.

本発明によるダイヤモンドライクカーボン皮膜被覆部材の実施の形態は、図1に示す処理装置10を使用して製造することができる。この処理装置10は、真空処理室12と、この真空処理室12内を減圧して真空にするための真空ポンプ14と、真空処理室12内の底部の中心部に配設された回転テーブル16と、この回転テーブル16上に治具18を介して載置された被処理部材としての母材20と、この母材20を取り囲むように配置された蒸発源としてのターゲット22と、これらのターゲット22の各々に接続された直流のスパッタ電源24と、回転テーブル16に接続された直流のイオンボンバードおよびバイアス電源26と、真空処理室12内にアルゴンガスおよび窒素ガスを導入するためのガス導入パイプ28とを備えている。   The embodiment of the diamond-like carbon film-coated member according to the present invention can be manufactured using the processing apparatus 10 shown in FIG. The processing apparatus 10 includes a vacuum processing chamber 12, a vacuum pump 14 for reducing the pressure in the vacuum processing chamber 12 to form a vacuum, and a rotary table 16 disposed at the center of the bottom of the vacuum processing chamber 12. A base material 20 as a member to be processed placed on the turntable 16 via a jig 18; a target 22 as an evaporation source disposed so as to surround the base material 20; and these targets A DC sputtering power supply 24 connected to each of 22, a DC ion bombard and bias power supply 26 connected to the rotary table 16, and a gas introduction pipe for introducing argon gas and nitrogen gas into the vacuum processing chamber 12. 28.

この処理装置10のターゲット22としてクロムターゲットを使用して母材20を窒素含有クロム皮膜で被覆した後、ターゲット22としてカーボンターゲットを使用してDLC皮膜で被覆する。窒素含有クロム皮膜としては、クロム皮膜中に窒素または窒化クロムがほぼ均一分散した皮膜(以下、「窒素含有クロム皮膜I」という)でもよいし、クロム皮膜中の膜厚方向中央部の窒素濃度がその両側の部分の窒素濃度より高い皮膜(以下、「窒素含有クロム皮膜II」という)でもよい。以下、窒素含有クロム皮膜およびDLC皮膜の形成方法について詳細に説明する。   The base material 20 is coated with a nitrogen-containing chromium film using a chromium target as the target 22 of the processing apparatus 10, and then coated with a DLC film using a carbon target as the target 22. The nitrogen-containing chromium film may be a film in which nitrogen or chromium nitride is substantially uniformly dispersed in the chromium film (hereinafter referred to as “nitrogen-containing chromium film I”), or the nitrogen concentration in the central portion in the film thickness direction of the chromium film is A film higher than the nitrogen concentration on both sides thereof (hereinafter referred to as “nitrogen-containing chromium film II”) may be used. Hereinafter, a method for forming the nitrogen-containing chromium film and the DLC film will be described in detail.

(窒素含有クロム皮膜Iの形成方法)
まず、処理装置10のターゲット22としてクロムターゲットを使用し、真空ポンプ14を作動させて真空処理室12内の真空排気を行った後、ガス導入パイプ28を介して真空処理室12内にアルゴンガスと窒素ガスを導入して真空処理室12内をスパッタリング雰囲気にする。なお、必要に応じて、スパッタリングを行う前にイオンボンバード処理を行って、母材20の表面を活性化しておくのが好ましい。
(Method for forming nitrogen-containing chromium film I)
First, a chromium target is used as the target 22 of the processing apparatus 10, the vacuum pump 14 is operated to evacuate the vacuum processing chamber 12, and then argon gas is introduced into the vacuum processing chamber 12 through the gas introduction pipe 28. And nitrogen gas are introduced to create a sputtering atmosphere in the vacuum processing chamber 12. If necessary, it is preferable to activate the surface of the base material 20 by performing ion bombardment before sputtering.

次に、ターゲット22にスパッタ電源22の高電圧を印加して、ターゲット22の近傍にグロー放電(低温プラズマ)を生じさせる。これにより、放電領域内のアルゴンガスがイオン化してターゲット22に高速で衝突し、この衝突によってターゲット22からクロム原子が叩き出され、このクロム原子が真空処理室12内の雰囲気中の窒素原子とともに母材20の表面に叩き付けられて、母材20の表面に窒素を含有するクロム皮膜として100原子当たり50〜99のクロム原子および50〜1の窒素原子を含むCr結晶が点在した皮膜が形成される。このスパッタリングでは、皮膜の厚さを均一にするために且つ母材20の温度をその焼戻し温度以下に維持するために、ターゲット22と母材20の間隔を、例えば、70mmに保持するのが好ましい。 Next, a high voltage of the sputtering power source 22 is applied to the target 22 to generate glow discharge (low temperature plasma) in the vicinity of the target 22. As a result, the argon gas in the discharge region is ionized and collides with the target 22 at a high speed, and this collision expels chromium atoms from the target 22, and these chromium atoms together with nitrogen atoms in the atmosphere in the vacuum processing chamber 12. Struck against the surface of the base material 20, the surface of the base material 20 was dotted with Cr X N Y crystals containing 50 to 99 chromium atoms and 50 to 1 nitrogen atoms per 100 atoms as a chromium film containing nitrogen. A film is formed. In this sputtering, in order to make the thickness of the film uniform and to maintain the temperature of the base material 20 below the tempering temperature, the distance between the target 22 and the base material 20 is preferably maintained at 70 mm, for example. .

なお、窒素ガスを導入しないでスパッタリングを行って母材20上に厚さ3μm以下、好ましくは1μm以下のクロム皮膜を形成した後に、窒素ガスを導入してスパッタリングを行って窒素含有クロム皮膜Iを形成してもよい。このようにクロム皮膜を介して窒素含有クロム皮膜を形成すれば、母材20とDLC皮膜との間の密着性をさらに向上させることができる。   Sputtering is performed without introducing nitrogen gas to form a chromium film having a thickness of 3 μm or less, preferably 1 μm or less on the base material 20, and then nitrogen gas is introduced to perform sputtering to form a nitrogen-containing chromium film I. It may be formed. If the nitrogen-containing chromium film is formed through the chromium film in this way, the adhesion between the base material 20 and the DLC film can be further improved.

(窒素含有クロム皮膜IIの形成方法)
まず、処理装置10のターゲット22としてクロムターゲットを使用し、真空ポンプ14を作動させて真空処理室12内の真空排気を行った後、ガス導入パイプ28を介して真空処理室12内にアルゴンガスを導入して真空処理室12内をスパッタリング雰囲気にする。なお、必要に応じて、スパッタリングを行う前にアルゴンガス雰囲気中でイオンボンバード処理を行って、母材20の表面をアルゴンイオンで活性化しておくのが好ましい。
(Method for forming nitrogen-containing chromium film II)
First, a chromium target is used as the target 22 of the processing apparatus 10, the vacuum pump 14 is operated to evacuate the vacuum processing chamber 12, and then argon gas is introduced into the vacuum processing chamber 12 through the gas introduction pipe 28. Is introduced into the vacuum processing chamber 12 to form a sputtering atmosphere. If necessary, it is preferable to activate the surface of the base material 20 with argon ions by performing ion bombardment in an argon gas atmosphere before performing sputtering.

次に、ターゲット22にスパッタ電源24の高電圧を印加して、ターゲット22の近傍にグロー放電(低温プラズマ)を生じさせる。これにより、放電領域内のアルゴンガスがイオン化してターゲット22に高速で衝突し、この衝突によってターゲット22からクロム原子が叩き出される。   Next, a high voltage of the sputtering power source 24 is applied to the target 22 to generate glow discharge (low temperature plasma) in the vicinity of the target 22. Thereby, the argon gas in the discharge region is ionized and collides with the target 22 at a high speed, and chromium atoms are knocked out of the target 22 by this collision.

このスパッタリングの開始から所定時間を経過した後、あるいはスパッタリングの開始時点から、ガス導入パイプ28を介して真空処理室12内に窒素ガスの導入を開始すると、ターゲット22から叩き出されたクロム原子は、真空処理室12内の雰囲気中の窒素濃度がゼロの間はクロム単独で、真空処理室12内の雰囲気中に窒素ガスが導入された後には雰囲気中の窒素原子とともに、母材20の表面に叩きつけられて堆積する。   When the introduction of nitrogen gas into the vacuum processing chamber 12 via the gas introduction pipe 28 is started after a predetermined time has elapsed from the start of sputtering or from the start of sputtering, the chromium atoms knocked out from the target 22 are When the nitrogen concentration in the atmosphere in the vacuum processing chamber 12 is zero, chromium alone, and after nitrogen gas is introduced into the atmosphere in the vacuum processing chamber 12, the surface of the base material 20 together with the nitrogen atoms in the atmosphere It is struck and deposited.

この窒素含有クロム皮膜IIは、クロム中に窒素が固溶されている組織、クロム中に窒化クロムが分散している組織、あるいはクロム中に窒素が固溶され且つ窒化クロムが分散している組織を有するが、この組織の調整は、スパッタリングの際に真空処理室12内の雰囲気中の窒素濃度を制御することによって行うことができ、この雰囲気中の窒素濃度の制御は、ガス導入パイプ28を介して真空処理室12内に導入する窒素ガスの供給量を制御することによって行うことができる。窒素ガスの供給量を増加して雰囲気中の窒素濃度を高くすれば、ターゲット22から叩き出されたクロム原子と結合して母材20の表面に堆積する窒素の量が多くなり、逆に、窒素ガスの供給量を減少させて雰囲気中の窒素濃度を低くすれば、窒素含有クロム皮膜IIに含まれる窒素の量が減少する。したがって、スパッタリングの中間時点における雰囲気中の窒素濃度が他の時点に比べて高くなり且つスパッタリングの開始時点および終了時点における雰囲気中の窒素濃度が中間時点の窒素濃度より低くなるように窒素ガスの供給量を制御すれば、クロム皮膜中の膜厚方向中央部の窒素濃度がその両側の部分の窒素濃度より高い窒素含有クロム皮膜IIを形成することができる。具体的には、スパッタリングの開始時点からスパッタリングの中間時点までは、雰囲気中の窒素濃度を逓増させ、スパッタリングの中間時点からスパッタリングの終了時点までは、雰囲気中の窒素濃度を逓減させるのが好ましい。なお、スパッタリングの開始時点では窒素ガスを供給しなくてもよい。   This nitrogen-containing chromium coating II has a structure in which nitrogen is dissolved in chromium, a structure in which chromium nitride is dispersed in chromium, or a structure in which nitrogen is dissolved in chromium and chromium nitride is dispersed. However, the adjustment of the structure can be performed by controlling the nitrogen concentration in the atmosphere in the vacuum processing chamber 12 during sputtering. The nitrogen concentration in the atmosphere is controlled by the gas introduction pipe 28. This can be done by controlling the supply amount of nitrogen gas introduced into the vacuum processing chamber 12 via If the supply amount of nitrogen gas is increased to increase the nitrogen concentration in the atmosphere, the amount of nitrogen that combines with the chromium atoms knocked out of the target 22 and deposits on the surface of the base material 20 increases. If the supply amount of nitrogen gas is reduced to lower the nitrogen concentration in the atmosphere, the amount of nitrogen contained in the nitrogen-containing chromium film II is reduced. Therefore, supply of nitrogen gas so that the nitrogen concentration in the atmosphere at the intermediate point of sputtering is higher than the other points and the nitrogen concentration in the atmosphere at the start and end points of sputtering is lower than the nitrogen concentration at the intermediate point. If the amount is controlled, it is possible to form a nitrogen-containing chromium coating II in which the nitrogen concentration in the central portion in the film thickness direction in the chromium coating is higher than the nitrogen concentration in the portions on both sides. Specifically, it is preferable to increase the nitrogen concentration in the atmosphere from the start time of sputtering to the intermediate time point of sputtering, and to decrease the nitrogen concentration in the atmosphere from the intermediate time point of sputtering to the end time of sputtering. Note that the nitrogen gas may not be supplied at the start of sputtering.

このようにして、クロム皮膜中の膜厚方向中央部の窒素濃度がその両側の部分の窒素濃度より高い窒素含有クロム皮膜IIが母材20上に形成される。スパッタリング時間は、母材20の種類や必要とする膜厚に応じて適宜設定することができ、例えば、0.5〜15時間に設定することができる。   In this way, a nitrogen-containing chromium film II is formed on the base material 20 in which the nitrogen concentration in the central portion in the film thickness direction in the chromium film is higher than the nitrogen concentration in the both sides. The sputtering time can be appropriately set according to the type of the base material 20 and the required film thickness, and can be set to 0.5 to 15 hours, for example.

また、窒素含有クロム皮膜IIでは、膜厚方向の窒素含有量の相違により、膜厚方向中央部で最も硬度が高く、例えば、Hv800〜2000、好ましくはHv1700程度であり、母材20側および表面側で硬度が低く、例えば、母材20側でHv500〜1000、好ましくはHvが500程度、表面側でHv1000〜1900、好ましくはHv1000程度である。したがって、皮膜全体としての硬度を最高硬度の部分よりも低くし、また、セラミックスである窒化クロム(CrN)の生成を抑制することにより、皮膜の靭性が良好になると考えられる。   Further, in the nitrogen-containing chromium film II, the hardness is highest in the central portion in the film thickness direction due to the difference in nitrogen content in the film thickness direction, for example, Hv 800 to 2000, preferably about Hv 1700, and the base material 20 side and the surface The hardness is low on the side, for example, Hv 500 to 1000, preferably about 500 on the base material 20 side, and Hv 1000 to 1900 on the surface side, preferably about Hv1000. Therefore, it is considered that the toughness of the film is improved by making the hardness of the entire film lower than that of the highest hardness part and suppressing the generation of chromium nitride (CrN) which is a ceramic.

さらに、窒素含有クロム皮膜IIの母材20側では、窒素含有量が膜厚方向中央部より低い分だけクロム含有量が高いので、皮膜と母材20との密着性も良好になる。母材20が機械部材に用いられる工具鋼や低炭素鋼などの金属の場合には、窒素含有クロム皮膜IIの母材20との界面の熱膨張率と母材20の熱膨張率の差を小さくすることにより、すなわち、窒素含有クロム皮膜IIの母材20との界面のクロム含有量を高くして膜厚方向中央部に向かって徐々に窒素含有量を増加させることにより、熱応力の発生を減少させて密着強度を増大させることができると考えられる。   Furthermore, since the chromium content is higher on the base material 20 side of the nitrogen-containing chromium coating II than the central portion in the film thickness direction, the adhesion between the coating and the base material 20 is improved. When the base material 20 is a metal such as tool steel or low carbon steel used for a machine member, the difference between the thermal expansion coefficient of the interface with the base material 20 of the nitrogen-containing chromium coating II and the thermal expansion coefficient of the base material 20 is calculated. Generation of thermal stress by decreasing, that is, increasing the chromium content at the interface with the base material 20 of the nitrogen-containing chromium film II and gradually increasing the nitrogen content toward the center in the film thickness direction It is considered that the adhesion strength can be increased by reducing the resistance.

また、窒素含有クロム皮膜IIは、母材20との密着性が良好であるので、皮膜形成時に窒素濃度を緩やかに変化させて母材20との接触面における熱膨張率と皮膜内部の熱膨張率との差による応力を小さく(緩和)することにより、耐摩耗性を保持しつつ、耐熱衝撃性も向上させることができると考えられる。   In addition, since the nitrogen-containing chromium film II has good adhesion to the base material 20, the nitrogen concentration is gradually changed during film formation, so that the thermal expansion coefficient at the contact surface with the base material 20 and the thermal expansion inside the film are increased. It is considered that by reducing (relaxing) the stress due to the difference from the rate, the thermal shock resistance can be improved while maintaining the wear resistance.

さらに、窒素含有クロム皮膜IIでは、表面の窒素含有量が母材20との接触面における窒素含有量より高くなっているので、皮膜表面側の硬度が母材20側の硬度よりも高くなる。   Further, in the nitrogen-containing chromium film II, the surface nitrogen content is higher than the nitrogen content in the contact surface with the base material 20, and therefore the hardness on the film surface side is higher than the hardness on the base material 20 side.

例えば、真空処理室12内の雰囲気中のアルゴンガスの分圧を1.2×10−3torr程度にし、窒素ガスの分圧を0〜0.5×10−3torr程度になるように雰囲気中の窒素濃度(窒素ガス供給量)を変化させることにより、スパッタリングの初期において、窒素濃度0〜0.6原子%、Hv500〜1000の母材20側の層を形成することができ、スパッタリングの中期において、窒素濃度0.5〜3.0原子%、Hv800〜2000の膜厚方向中央部の層を形成することができ、スパッタリングの終期において、窒素濃度0.3〜0.6原子%、Hv1000〜1900の表面側の層を形成することができる。このようにして形成された窒素含有クロム皮膜II中の窒素濃度の測定は、通常の物理分析法を適用して行うことができ、例えば、グロー放電発光表面分析(GDS)を利用して行うことができる。 For example, the atmosphere is set so that the partial pressure of argon gas in the atmosphere in the vacuum processing chamber 12 is about 1.2 × 10 −3 torr and the partial pressure of nitrogen gas is about 0 to 0.5 × 10 −3 torr. By changing the nitrogen concentration (nitrogen gas supply amount), a layer on the base material 20 side having a nitrogen concentration of 0 to 0.6 atomic% and Hv of 500 to 1000 can be formed at the initial stage of sputtering. In the middle period, a central layer in the film thickness direction having a nitrogen concentration of 0.5 to 3.0 atomic% and Hv 800 to 2000 can be formed, and in the final stage of sputtering, the nitrogen concentration is 0.3 to 0.6 atomic%, A layer on the surface side of Hv 1000 to 1900 can be formed. The nitrogen concentration in the nitrogen-containing chromium film II thus formed can be measured by applying a normal physical analysis method, for example, using glow discharge luminescence surface analysis (GDS). Can do.

また、窒素含有クロム皮膜IIの厚さは、窒素含有量がゼロの部分がある場合はその部分も含めて、数μm程度から最大100μmにすることができる。しかし、窒素含有クロム皮膜IIが厚過ぎると、皮膜の応力によって皮膜にクラックが入り易くなる傾向があるので、実際には膜厚の上限を30μm程度にするのが好ましい。この範囲内において、要求される機械部材の特性に応じて機械部材の種類ごとに膜厚を決めればよい。例えば、精度の厳しい機械部材の場合には、膜厚1〜5μm程度、好ましくは3μm程度であり、良好な耐摩耗性を必要とする機械部材の場合には、膜厚5〜30μm、好ましくは10〜20μm程度である。   Further, the thickness of the nitrogen-containing chromium film II can be set to about several μm to a maximum of 100 μm including a portion where the nitrogen content is zero. However, if the nitrogen-containing chromium film II is too thick, cracks tend to easily occur in the film due to the stress of the film, so it is actually preferable to set the upper limit of the film thickness to about 30 μm. Within this range, the film thickness may be determined for each type of mechanical member according to the required characteristics of the mechanical member. For example, in the case of a mechanical member with high precision, the film thickness is about 1 to 5 μm, preferably about 3 μm. In the case of a mechanical member that requires good wear resistance, the film thickness is 5 to 30 μm, preferably It is about 10-20 micrometers.

(DLC皮膜の形成)
上述したように母材を窒素含有クロム皮膜IまたはIIで被覆した後、イオンエッチングを行う。次に、処理装置10のクロムターゲット22としてカーボンターゲットを使用し、真空ポンプ14を作動させて真空処理室12内の真空排気を行った後、ガス導入パイプ28を介して真空処理室12内にアルゴンガス(またはアルゴンガスと窒素ガス)を導入して真空処理室12内をスパッタリング雰囲気にする。
(Formation of DLC film)
As described above, after the base material is coated with the nitrogen-containing chromium film I or II, ion etching is performed. Next, a carbon target is used as the chromium target 22 of the processing apparatus 10, the vacuum pump 14 is operated to evacuate the vacuum processing chamber 12, and then the gas is introduced into the vacuum processing chamber 12 through the gas introduction pipe 28. Argon gas (or argon gas and nitrogen gas) is introduced to make the inside of the vacuum processing chamber 12 a sputtering atmosphere.

次に、ターゲット22にスパッタ電源22の高電圧を印加して、ターゲット22の近傍にグロー放電(低温プラズマ)を生じさせる。これにより、放電領域内のアルゴンガスがイオン化してターゲット22に高速で衝突し、この衝突によってターゲット22からカーボン原子が叩き出され、このカーボン原子が(真空処理室12内にアルゴンガスと窒素ガスを導入する場合には雰囲気中の窒素原子とともに)母材20の表面に叩き付けられて、母材20の表面に窒素を含有するDLC皮膜が形成される。   Next, a high voltage of the sputtering power source 22 is applied to the target 22 to generate glow discharge (low temperature plasma) in the vicinity of the target 22. As a result, the argon gas in the discharge region is ionized and collides with the target 22 at a high speed, and carbon atoms are knocked out of the target 22 by this collision, and the carbon atoms are released into the vacuum processing chamber 12 (argon gas and nitrogen gas). Is introduced to the surface of the base material 20 (with nitrogen atoms in the atmosphere) to form a DLC film containing nitrogen on the surface of the base material 20.

このようにして、母材20が窒素含有クロム皮膜で被覆され、この窒素含有クロム皮膜がDLC皮膜で被覆されたダイヤモンドライクカーボン皮膜被覆部材を製造することができる。なお、バイアス電圧の調整によりDLC皮膜の硬さを調整して、窒素含有クロム皮膜との界面の硬さを窒素含有クロム皮膜と同等にするのが好ましい。例えば、窒素含有クロム皮膜の表面の硬さをHv800〜1300とし、その上にHv1000〜1300のDLC皮膜を形成するのが好ましい。   In this way, a diamond-like carbon film-coated member in which the base material 20 is coated with a nitrogen-containing chromium film and the nitrogen-containing chromium film is coated with a DLC film can be produced. It is preferable to adjust the hardness of the DLC film by adjusting the bias voltage so that the hardness of the interface with the nitrogen-containing chromium film is equal to that of the nitrogen-containing chromium film. For example, the hardness of the surface of the nitrogen-containing chromium film is preferably Hv 800 to 1300, and a DLC film of Hv 1000 to 1300 is preferably formed thereon.

なお、DLC皮膜中の炭素の同定は、ラマン分光法によって行うことができる。また、皮膜のマイクロビッカース硬度は、皮膜の断面を研磨した後、その断面に圧子を押し付けて通常の方法で測定することができる。皮膜が薄くて皮膜の断面の硬度を測定することができない場合には、同じ条件で成膜時間を長くして測定可能な程度の厚さにした皮膜の断面の硬度を測定すればよい。   The carbon in the DLC film can be identified by Raman spectroscopy. The micro Vickers hardness of the film can be measured by a usual method after polishing the cross section of the film and pressing an indenter on the cross section. When the film is thin and the hardness of the cross section of the film cannot be measured, the hardness of the cross section of the film having a thickness that can be measured by increasing the film formation time under the same conditions may be measured.

以下、本発明によるダイヤモンドライクカーボン皮膜被覆部材およびその製造方法の実施例について詳細に説明する。   Examples of the diamond-like carbon film-coated member and the manufacturing method thereof according to the present invention will be described below in detail.

[実施例1]
合金鋼からなる母材20としてSCM415(クロモリ鋼(Cr−Mo鋼))からなる母材を用意し、ターゲット22としてクロムターゲットを使用する処理装置10の真空処理室12に母材20を入れ、この真空処理室12内を2×10−2torrのアルゴンガス雰囲気中として1250V×0.01mAでイオンボンバード処理を約40分間施して、母材20の表面を活性化した。
[Example 1]
A base material made of SCM415 (chromoly steel (Cr-Mo steel)) is prepared as the base material 20 made of alloy steel, and the base material 20 is placed in the vacuum processing chamber 12 of the processing apparatus 10 that uses a chromium target as the target 22. The inside of the vacuum processing chamber 12 was placed in an argon gas atmosphere of 2 × 10 −2 torr, and ion bombarding was performed at 1250 V × 0.01 mA for about 40 minutes to activate the surface of the base material 20.

次に、処理装置10の真空処理室12内を排気して真空にした後、真空処理室12内の雰囲気中のアルゴンガスの分圧を1.2×10−3torr、バイアス電圧を−100Vとして、スパッタリングを約7分間行って、母材20上に硬度Hv700程度、厚さ1μm弱のクロム皮膜を形成した。 Next, after the inside of the vacuum processing chamber 12 of the processing apparatus 10 is evacuated and evacuated, the partial pressure of argon gas in the atmosphere in the vacuum processing chamber 12 is 1.2 × 10 −3 torr, and the bias voltage is −100 V. Then, sputtering was performed for about 7 minutes, and a chromium film having a hardness of about Hv 700 and a thickness of less than 1 μm was formed on the base material 20.

続いて、処理装置10の真空処理室12内に窒素ガスを導入して、真空処理室12内の雰囲気中のアルゴンガスの分圧を1.2×10−3torr、窒素ガスの分圧を0.2×10−3torr、バイアス電圧を−100Vとして、スパッタリングを約93分間行って、クロム皮膜上に硬度Hv1700程度、厚さ15μmの窒素含有クロム皮膜Iを形成した。 Subsequently, nitrogen gas is introduced into the vacuum processing chamber 12 of the processing apparatus 10 so that the partial pressure of argon gas in the atmosphere in the vacuum processing chamber 12 is 1.2 × 10 −3 torr and the partial pressure of nitrogen gas is reduced. Sputtering was performed for about 93 minutes at 0.2 × 10 −3 torr and a bias voltage of −100 V, and a nitrogen-containing chromium film I having a hardness of about Hv 1700 and a thickness of 15 μm was formed on the chromium film.

このように窒素含有クロム皮膜Iを形成した母材20を、ターゲット22としてカーボンターゲットを使用する処理装置10に入れ、真空処理室12内を排気して8×10−3Paまで減圧した後、−1000V×0.1Aで3時間イオンボンバード処理を施した。 After the base material 20 thus formed with the nitrogen-containing chromium film I is placed in the processing apparatus 10 using a carbon target as the target 22, the inside of the vacuum processing chamber 12 is evacuated and depressurized to 8 × 10 −3 Pa. Ion bombarding was performed at −1000 V × 0.1 A for 3 hours.

最後に、処理装置10の真空処理室12内にアルゴンガスを30〜40sccm、窒素ガスを9sccmで導入し、バイアス電圧を−150Vとして、DC放電(1.4kW)によりターゲット22に生成したプラズマを使用してスパッタリング処理を4時間施すことにより、窒素含有クロム皮膜I上に厚さ5μmのDLC皮膜を形成した。   Finally, argon gas is introduced into the vacuum processing chamber 12 of the processing apparatus 10 at 30 to 40 sccm and nitrogen gas at 9 sccm, the bias voltage is set to −150 V, and the plasma generated on the target 22 by DC discharge (1.4 kW) is generated. A DLC film having a thickness of 5 μm was formed on the nitrogen-containing chromium film I by performing sputtering treatment for 4 hours.

[実施例2]
実施例1と同様に母材20の表面を活性化した後、ターゲット22としてクロムターゲットを使用する処理装置10の真空処理室12内を排気して真空にし、その後、真空処理室12内の雰囲気中のアルゴンガスの分圧を1.2×10−3torrとし、窒素ガスの分圧を0〜0.5×10−3torrに変化させながら、バイアス電圧−100Vでスパッタリングを約180分間行って、母材側の層の硬度Hv700、中間層の硬度Hv1700、表面側の層の硬度1000、厚さ15μmの窒素含有クロム皮膜IIを母材20上に形成した。その後、実施例1と同様の方法により、窒素含有クロム皮膜II上に厚さ5μmのDLC皮膜を形成した。
[Example 2]
After activating the surface of the base material 20 as in Example 1, the inside of the vacuum processing chamber 12 of the processing apparatus 10 that uses a chromium target as the target 22 is evacuated to a vacuum, and then the atmosphere in the vacuum processing chamber 12 Sputtering was performed at a bias voltage of −100 V for about 180 minutes while the partial pressure of argon gas was 1.2 × 10 −3 torr and the partial pressure of nitrogen gas was changed to 0 to 0.5 × 10 −3 torr. Thus, a nitrogen-containing chromium film II having a hardness Hv700 of the base material side layer, a hardness Hv1700 of the intermediate layer, a hardness of the surface side layer of 1000, and a thickness of 15 μm was formed on the base material 20. Thereafter, a DLC film having a thickness of 5 μm was formed on the nitrogen-containing chromium film II by the same method as in Example 1.

[比較例]
窒素含有クロム皮膜Iを形成しなかった以外は、実施例1と同様の方法により、母材20上に厚さ5μmのDLC皮膜を形成した。
[Comparative example]
A DLC film having a thickness of 5 μm was formed on the base material 20 by the same method as in Example 1 except that the nitrogen-containing chromium film I was not formed.

このようにして製造した実施例1、2および比較例のダイヤモンドライクカーボン皮膜被覆部材の密着性を評価した。この密着性は、スクラッチ試験機を使用し、ダイヤモンド圧子(0.2mmR)によって、荷重速度100N/分、スクラッチ速度10mm/分で皮膜のスクラッチを行うことによって評価した。その結果、実施例1では、62Nまで母材からの皮膜の剥がれやスクラッチ周辺の皮膜のめくれ(破壊)がなく、実施例2では、100N以上でも母材からの皮膜の剥がれや皮膜のめくれがなかったが、比較例では、56Nで母材からの皮膜の剥がれや皮膜のめくれがあった。   The adhesion of the diamond-like carbon film-coated members of Examples 1 and 2 and Comparative Example produced as described above was evaluated. This adhesion was evaluated by scratching the film with a diamond indenter (0.2 mmR) at a load rate of 100 N / min and a scratch rate of 10 mm / min using a scratch tester. As a result, in Example 1, there is no peeling of the film from the base material up to 62N, and no film peeling (destruction) around the scratch, and in Example 2, peeling of the film from the base material and turning of the film even at 100N or more. However, in the comparative example, there was peeling of the film from the base material or turning of the film at 56N.

本発明によれば、母材とDLC皮膜との間の硬さや熱膨張係数の差よりも母材との硬さや熱膨張係数の差が小さく且つ窒素は含有しているが基本的には金属からなる窒素含有クロム皮膜を、金属からなる母材上に形成した後、その上にDLC皮膜を形成することによって、母材とDLC皮膜の密着性を向上させることができる。また、母材と窒素含有クロム皮膜の間に窒素含有クロム皮膜より軟らかいクロム皮膜を形成すれば、窒素含有クロム皮膜とDLC皮膜との間の硬さや熱膨張係数の差が小さいため、母材とDLC皮膜の密着性をさらに向上させることができる。また、窒素含有クロム皮膜中の窒素濃度やDLC皮膜の硬度を調整することによって、母材とDLC皮膜の密着性をさらに向上させることができる。   According to the present invention, the difference in hardness and thermal expansion coefficient between the base material and the DLC film is smaller than the difference in hardness and thermal expansion coefficient between the base material and the DLC film, and nitrogen is contained but basically the metal. After forming the nitrogen-containing chromium film made of the above on the base material made of metal, the adhesion between the base material and the DLC film can be improved by forming the DLC film thereon. In addition, if a chromium film softer than the nitrogen-containing chromium film is formed between the base material and the nitrogen-containing chromium film, the difference in hardness and thermal expansion coefficient between the nitrogen-containing chromium film and the DLC film is small. The adhesion of the DLC film can be further improved. Further, the adhesion between the base material and the DLC film can be further improved by adjusting the nitrogen concentration in the nitrogen-containing chromium film and the hardness of the DLC film.

本発明によるダイヤモンドライクカーボン皮膜被覆部材の実施の形態を製造するための処理装置の概略図である。It is the schematic of the processing apparatus for manufacturing embodiment of the diamond-like carbon film coating | coated member by this invention.

符号の説明Explanation of symbols

10 処理装置
12 真空処理室
14 真空ポンプ
16 回転テーブル
18 治具
20 母材
22 ターゲット
24 スパッタ電源
26 イオンボンバードおよびバイアス電源
28 ガス導入パイプ
DESCRIPTION OF SYMBOLS 10 Processing apparatus 12 Vacuum processing chamber 14 Vacuum pump 16 Rotary table 18 Jig 20 Base material 22 Target 24 Sputtering power supply 26 Ion bombardment and bias power supply 28 Gas introduction pipe

Claims (10)

母材上にクロム皮膜が形成され、このクロム皮膜上に窒素含有クロム皮膜が形成され、この窒素含有クロム皮膜上にダイヤモンドライクカーボン皮膜が形成されていることを特徴とする、ダイヤモンドライクカーボン皮膜被覆部材。 A diamond-like carbon film coating characterized in that a chromium film is formed on a base material , a nitrogen-containing chromium film is formed on the chromium film, and a diamond-like carbon film is formed on the nitrogen-containing chromium film. Element. 前記窒素含有クロム皮膜が、窒素および窒化クロムの少なくとも一方がクロム皮膜中に略均一に分散した皮膜であることを特徴とする、請求項に記載のダイヤモンドライクカーボン皮膜被覆部材。 The diamond-like carbon film-coated member according to claim 1 , wherein the nitrogen-containing chromium film is a film in which at least one of nitrogen and chromium nitride is dispersed substantially uniformly in the chromium film. 母材上に窒素含有クロム皮膜が形成され、この窒素含有クロム皮膜上にダイヤモンドライクカーボン皮膜が形成され、窒素含有クロム皮膜が、クロム皮膜中の膜厚方向中央部の窒素濃度がその両側の部分の窒素濃度より高い皮膜であることを特徴とする、ダイヤモンドライクカーボン皮膜被覆部材。 A nitrogen-containing chromium film is formed on the base material, and a diamond-like carbon film is formed on the nitrogen-containing chromium film . The nitrogen-containing chromium film has a nitrogen concentration in the central portion in the film thickness direction in the chromium film. characterized in that it is higher than the nitrogen concentration coating da ear Mondo-like carbon film covering member. 前記母材と前記窒素含有クロム皮膜の間にクロム皮膜が形成されていることを特徴とする、請求項3に記載のダイヤモンドライクカーボン皮膜被覆部材。The diamond-like carbon film-coated member according to claim 3, wherein a chromium film is formed between the base material and the nitrogen-containing chromium film. 母材上にクロム皮膜を形成し、このクロム皮膜上に窒素含有クロム皮膜を形成した後、この窒素含有クロム皮膜上にダイヤモンドライクカーボン皮膜を形成することを特徴とする、ダイヤモンドライクカーボン皮膜被覆部材の製造方法。 Chromium coating formed on the base material, after forming a nitrogen-containing chromium film on the chrome surface, and forming a diamond-like carbon film on the nitrogen-containing chromium film, diamond-like carbon film covering member Manufacturing method. 前記窒素含有クロム皮膜が、クロムターゲットを使用してアルゴンと窒素を含む雰囲気中でスパッタリングすることによって形成されることを特徴とする、請求項に記載のダイヤモンドライクカーボン皮膜被覆部材の製造方法。 The method for producing a diamond-like carbon film-coated member according to claim 5 , wherein the nitrogen-containing chromium film is formed by sputtering in an atmosphere containing argon and nitrogen using a chromium target. 前記ダイヤモンドライクカーボン皮膜が、カーボンターゲットを使用してスパッタリングすることによって形成されることを特徴とする、請求項5または6に記載のダイヤモンドライクカーボン皮膜被覆部材の製造方法。 The method for producing a diamond-like carbon film-coated member according to claim 5 or 6 , wherein the diamond-like carbon film is formed by sputtering using a carbon target. 前記窒素含有クロム皮膜が、窒素および窒化クロムの少なくとも一方がクロム皮膜中に略均一に分散した皮膜であることを特徴とする、請求項5乃至のいずれかに記載のダイヤモンドライクカーボン皮膜被覆部材の製造方法。 Said nitrogen-containing chromium coating, at least one of nitrogen and chromium nitride is characterized by a substantially uniformly dispersed coating in chrome surface, diamond-like carbon film-coated member according to any one of claims 5 to 7 Manufacturing method. スパッタリングの中間時点における雰囲気中の窒素濃度が他の時点に比べて高くなり且つスパッタリングの開始時点および終了時点における雰囲気中の窒素濃度が中間時点の窒素濃度より低くなるように窒素ガスの供給量を制御することにより、クロム皮膜中の膜厚方向中央部の窒素濃度がその両側の部分の窒素濃度より高い窒素含有クロム皮膜を母材上に形成した後、この窒素含有クロム皮膜上にダイヤモンドライクカーボン皮膜を形成することを特徴とする、ダイヤモンドライクカーボン皮膜被覆部材の製造方法。 The nitrogen gas supply amount is set so that the nitrogen concentration in the atmosphere at the intermediate point of sputtering is higher than other points and the nitrogen concentration in the atmosphere at the start and end points of sputtering is lower than the nitrogen concentration at the intermediate point. By controlling , after forming a nitrogen-containing chromium film on the base material in which the nitrogen concentration in the central part in the film thickness direction in the chromium film is higher than the nitrogen concentration on both sides, diamond-like carbon is formed on this nitrogen-containing chromium film A method for producing a diamond-like carbon film-coated member, comprising forming a film. 前記母材上に前記窒素含有クロム皮膜を形成する前に、前記母材上にクロム皮膜を形成し、その後、前記窒素含有クロム皮膜を形成することを特徴とする、請求項9に記載のダイヤモンドライクカーボン皮膜被覆部材の製造方法。The diamond according to claim 9, wherein a chromium film is formed on the base material before the nitrogen-containing chromium film is formed on the base material, and then the nitrogen-containing chromium film is formed. A method for producing a like carbon film-coated member.
JP2005219597A 2005-07-28 2005-07-28 Diamond-like carbon film-coated member and method for producing the same Active JP4984206B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005219597A JP4984206B2 (en) 2005-07-28 2005-07-28 Diamond-like carbon film-coated member and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005219597A JP4984206B2 (en) 2005-07-28 2005-07-28 Diamond-like carbon film-coated member and method for producing the same

Publications (2)

Publication Number Publication Date
JP2007031797A JP2007031797A (en) 2007-02-08
JP4984206B2 true JP4984206B2 (en) 2012-07-25

Family

ID=37791402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005219597A Active JP4984206B2 (en) 2005-07-28 2005-07-28 Diamond-like carbon film-coated member and method for producing the same

Country Status (1)

Country Link
JP (1) JP4984206B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4922662B2 (en) * 2006-05-17 2012-04-25 トーヨーエイテック株式会社 Machine parts and manufacturing method thereof
JP2009167512A (en) 2008-01-21 2009-07-30 Kobe Steel Ltd Diamond-like carbon film for sliding component and method for manufacturing the same
ES2878165T3 (en) 2015-04-23 2021-11-18 Hitachi Metals Ltd Coated metal mold and method of producing it
CN109594042B (en) * 2019-01-29 2020-10-20 苏州涂冠镀膜科技有限公司 Anti-adhesion hard coating for injection mold and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3189347B2 (en) * 1991-12-24 2001-07-16 住友電気工業株式会社 Resin mold, resin mold manufacturing method, and resin molding method
JP3954739B2 (en) * 1997-11-06 2007-08-08 Dowaホールディングス株式会社 Method for producing nitrogen-containing Cr coating
JP4745604B2 (en) * 2003-08-07 2011-08-10 ブラザー工業株式会社 Sliding part manufacturing method and sliding part

Also Published As

Publication number Publication date
JP2007031797A (en) 2007-02-08

Similar Documents

Publication Publication Date Title
US6716540B2 (en) Multilayer film formed body
JP2007070667A (en) Formed article with hard multilayer film of diamond-like carbon, and production method therefor
JP2010106311A (en) Formed article with hard multilayer film and method for producing the same
JP2006207490A (en) Engine valve and surface treatment method for engine valve
WO2004076710A1 (en) Amorphous carbon film, process for producing the same and amorphous carbon film-coated material
JP4848545B2 (en) Hard coating member and method for producing the same
JP7382124B2 (en) Improved coating process
JP2016056435A (en) Method for manufacturing hard slide member and hard slide member
JP4984206B2 (en) Diamond-like carbon film-coated member and method for producing the same
JP2008024996A (en) Diamond-like carbon laminated coating film member and method of manufacturing the same
JP4449187B2 (en) Thin film formation method
JP5145051B2 (en) Hard film covering member and method for manufacturing the same
JP4669992B2 (en) Nitrogen-containing chromium coating, method for producing the same, and mechanical member
JP2005082822A (en) Hard thick film, and method for forming the same
JP5226826B2 (en) Method for producing diamond-like carbon hard multilayer film molded body
JP2006161075A (en) Hard carbon film, and its depositing method
JP2004137541A (en) Dlc gradient structural hard film, and its manufacturing method
WO2016111288A1 (en) Diamond-like carbon layered laminate and method for manufacturing same
JP4848546B2 (en) Hard coating member and method for producing the same
JP2011068941A (en) Method for depositing hard film, and hard film
JP5924908B2 (en) Method for producing hard coating member
JP4852746B2 (en) Nitrogen-containing chromium coating, method for producing the same, and mechanical member
JP2004238696A (en) Dlc coating film
WO1990004044A1 (en) Surface treatment of metals and alloys
JP5212416B2 (en) Amorphous carbon coated member

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080602

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100422

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110809

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110920

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120208

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120327

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20120411

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120412

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20120411

R150 Certificate of patent or registration of utility model

Ref document number: 4984206

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150511

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250