JP4981742B2 - 発光ダイオードパッケージ - Google Patents
発光ダイオードパッケージ Download PDFInfo
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- JP4981742B2 JP4981742B2 JP2008120179A JP2008120179A JP4981742B2 JP 4981742 B2 JP4981742 B2 JP 4981742B2 JP 2008120179 A JP2008120179 A JP 2008120179A JP 2008120179 A JP2008120179 A JP 2008120179A JP 4981742 B2 JP4981742 B2 JP 4981742B2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 10
- 239000012778 molding material Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010292 electrical insulation Methods 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Devices (AREA)
Description
110 支持体
112 搭載部
114 環状枠
120 導電性ワイヤ単位
122 導電性ワイヤ
124 絶縁材
130 LEDチップ
140 制御回路モジュール
150 反射膜
160 冷却フィン
170 成形材料
180 ヒートパイプ
Claims (16)
- 搭載部及び該搭載部の周囲に接続した環状枠を具える支持体であって、前記搭載部が上方に盛り上がる半球形状の上面と少なくとも一対の通し孔とを含む支持体と、
それぞれが前記通し孔の内部に配置された複数対の第一導電性ワイヤ単位であって、各導電性ワイヤ単位が導電性ワイヤと該導電性ワイヤを封入する絶縁材とを含む複数対の第一導電性ワイヤ単位と、
前記支持体の上面に配置され、各々が対応する前記第一導電性ワイヤ単位と電気的に接続された複数の第一LEDチップと、
前記支持体の底部に配置され、前記導電性ワイヤと電気的に接続された、LEDチップの操作を制御するための制御回路モジュールと、
を具える発光ダイオード(LED)パッケージ。 - 前記支持体の材料が、銅、アルミニウム、銅系合金又は銅系複合材料、アルミニウム系合金又はアルミニウム系複合材料、窒化アルミニウム及び酸化アルミニウムよりなる群から選択される請求項1に記載のLEDパッケージ。
- 更に、前記環状枠の内面に配置された反射膜を具える請求項1に記載のLEDパッケージ。
- 更に、前記環状枠の外面に配置された複数の冷却フィンを具える請求項1に記載のLEDパッケージ。
- 前記第一LEDチップが、ワイヤボンディング技術又はフリップチップボンディング技術によって導電性ワイヤと電気的に接続されている請求項1に記載のLEDパッケージ。
- 更に、前記支持体の上面に配置された複数の第二LEDチップと、
複数対の第二導電性ワイヤ単位であって、それぞれが前記支持体上に配置された電気絶縁層と該電気絶縁層上に配置された導電性ワイヤ層とを含み、該導電性ワイヤ層がそれぞれ第二LEDチップ及び制御回路モジュールと電気的に接続されている複数対の第二導電性ワイヤ単位と、
を具える請求項1に記載のLEDパッケージ。 - 前記第二LEDチップが、ワイヤボンディング技術によって導電性ワイヤ層と電気的に接続されている請求項6に記載のLEDパッケージ。
- 更に、前記支持体上に配置された、第一LEDチップ及び第二LEDチップを封入するための成形材料を具える請求項6に記載のLEDパッケージ。
- 更に、前記支持体上に配置された、第一LEDチップを封入するための成形材料を具える請求項1に記載のLEDパッケージ。
- 搭載部及び該搭載部の周囲に接続した環状枠を具える支持体であって、前記搭載部が上方に盛り上がる半球形状の上面を含む支持体と、
複数対の導電性ワイヤ単位であって、それぞれが対応する前記支持体上に配置された電気絶縁層と該電気絶縁層上に配置された導電性ワイヤ層とを含む複数対の導電性ワイヤ単位と、
前記支持体の上面に配置され、前記導電性ワイヤ層と電気的に接続された複数のLEDチップと、
前記導電性ワイヤ層と電気的に接続された、LEDチップの操作を制御するための制御回路モジュールと、
を具えるLEDパッケージ。 - 前記支持体の材料が、銅、アルミニウム、銅系合金又は銅系複合材料、アルミニウム系合金又はアルミニウム系複合材料、窒化アルミニウム及び酸化アルミニウムよりなる群から選択される請求項10に記載のLEDパッケージ。
- 更に、前記環状枠の内面に配置された反射膜を具える請求項10に記載のLEDパッケージ。
- 更に、前記環状枠の外面に配置された複数の冷却フィンを具える請求項10に記載のLEDパッケージ。
- 更に、前記支持体の底面及び前記環状枠の内面に配置されたヒートパイプを具える請求項10に記載のLEDパッケージ。
- 前記LEDチップが、ワイヤボンディング技術によって導電性ワイヤ層と電気的に接続されている請求項10に記載のLEDパッケージ。
- 更に、前記支持体上に配置された、LEDチップを封入するための成形材料を具える請求項10に記載のLEDパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096118292 | 2007-05-23 | ||
TW096118292A TW200847469A (en) | 2007-05-23 | 2007-05-23 | Substrates of curved surface for light emitting diodes |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008294438A JP2008294438A (ja) | 2008-12-04 |
JP4981742B2 true JP4981742B2 (ja) | 2012-07-25 |
Family
ID=40071570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008120179A Active JP4981742B2 (ja) | 2007-05-23 | 2008-05-02 | 発光ダイオードパッケージ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7872279B2 (ja) |
JP (1) | JP4981742B2 (ja) |
TW (1) | TW200847469A (ja) |
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US20100067240A1 (en) * | 2008-09-16 | 2010-03-18 | John Selverian | Optical Cup For Lighting Module |
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JPWO2010140666A1 (ja) * | 2009-06-04 | 2012-11-22 | ミツミ電機株式会社 | 半導体基板及びその製造方法、並びに半導体装置及びその製造方法 |
KR101081069B1 (ko) * | 2009-12-21 | 2011-11-07 | 엘지이노텍 주식회사 | 발광소자 및 그를 이용한 라이트 유닛 |
JP2011199211A (ja) * | 2010-03-24 | 2011-10-06 | Kowa Denki Sangyo Kk | 照明装置 |
US8319247B2 (en) | 2010-03-25 | 2012-11-27 | Koninklijke Philips Electronics N.V. | Carrier for a light emitting device |
US8486761B2 (en) * | 2010-03-25 | 2013-07-16 | Koninklijke Philips Electronics N.V. | Hybrid combination of substrate and carrier mounted light emitting devices |
JP5496757B2 (ja) * | 2010-04-16 | 2014-05-21 | 交和電気産業株式会社 | 照明装置 |
JP5627932B2 (ja) * | 2010-06-05 | 2014-11-19 | 交和電気産業株式会社 | 集魚装置 |
JP5658496B2 (ja) * | 2010-07-08 | 2015-01-28 | 交和電気産業株式会社 | 集魚装置 |
CN201758140U (zh) * | 2010-07-16 | 2011-03-09 | 福建中科万邦光电股份有限公司 | 新型led光源模块封装结构 |
CN102339928A (zh) * | 2010-07-29 | 2012-02-01 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
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2007
- 2007-05-23 TW TW096118292A patent/TW200847469A/zh unknown
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2008
- 2008-03-27 US US12/057,350 patent/US7872279B2/en active Active
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US7872279B2 (en) | 2011-01-18 |
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