JP4978800B2 - Manufacturing method of substrate with metal wiring - Google Patents
Manufacturing method of substrate with metal wiring Download PDFInfo
- Publication number
- JP4978800B2 JP4978800B2 JP2007537783A JP2007537783A JP4978800B2 JP 4978800 B2 JP4978800 B2 JP 4978800B2 JP 2007537783 A JP2007537783 A JP 2007537783A JP 2007537783 A JP2007537783 A JP 2007537783A JP 4978800 B2 JP4978800 B2 JP 4978800B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- resist pattern
- pattern
- film
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 85
- 229910052751 metal Inorganic materials 0.000 title claims description 62
- 239000002184 metal Substances 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000007740 vapor deposition Methods 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 27
- 239000002904 solvent Substances 0.000 claims description 24
- 239000011342 resin composition Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 17
- 238000001035 drying Methods 0.000 claims description 12
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 70
- 238000000034 method Methods 0.000 description 48
- -1 phenol compound Chemical class 0.000 description 41
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 239000004094 surface-active agent Substances 0.000 description 16
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Natural products OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 15
- 229920003986 novolac Polymers 0.000 description 13
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 9
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
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- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
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- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
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- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 6
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- OGRAOKJKVGDSFR-UHFFFAOYSA-N 2,3,5-trimethylphenol Chemical compound CC1=CC(C)=C(C)C(O)=C1 OGRAOKJKVGDSFR-UHFFFAOYSA-N 0.000 description 4
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 4
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- 239000007864 aqueous solution Substances 0.000 description 4
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- 238000011156 evaluation Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 3
- 229940105324 1,2-naphthoquinone Drugs 0.000 description 3
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002318 adhesion promoter Substances 0.000 description 3
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N butyric aldehyde Natural products CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000032050 esterification Effects 0.000 description 3
- 238000005886 esterification reaction Methods 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 229960001755 resorcinol Drugs 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- FJJYHTVHBVXEEQ-UHFFFAOYSA-N 2,2-dimethylpropanal Chemical compound CC(C)(C)C=O FJJYHTVHBVXEEQ-UHFFFAOYSA-N 0.000 description 2
- QSZCGGBDNYTQHH-UHFFFAOYSA-N 2,3-dimethoxyphenol Chemical compound COC1=CC=CC(O)=C1OC QSZCGGBDNYTQHH-UHFFFAOYSA-N 0.000 description 2
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 2
- KYFBKHRLIHDKPB-UHFFFAOYSA-N 2,5-Dimethoxyphenol Chemical compound COC1=CC=C(OC)C(O)=C1 KYFBKHRLIHDKPB-UHFFFAOYSA-N 0.000 description 2
- IXQGCWUGDFDQMF-UHFFFAOYSA-N 2-Ethylphenol Chemical compound CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 2
- QFYYAIBEHOEZKC-UHFFFAOYSA-N 2-Methoxyresorcinol Chemical compound COC1=C(O)C=CC=C1O QFYYAIBEHOEZKC-UHFFFAOYSA-N 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
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- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- XOUQAVYLRNOXDO-UHFFFAOYSA-N 2-tert-butyl-5-methylphenol Chemical compound CC1=CC=C(C(C)(C)C)C(O)=C1 XOUQAVYLRNOXDO-UHFFFAOYSA-N 0.000 description 2
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- LPCJHUPMQKSPDC-UHFFFAOYSA-N 3,5-diethylphenol Chemical compound CCC1=CC(O)=CC(CC)=C1 LPCJHUPMQKSPDC-UHFFFAOYSA-N 0.000 description 2
- HMNKTRSOROOSPP-UHFFFAOYSA-N 3-Ethylphenol Chemical compound CCC1=CC=CC(O)=C1 HMNKTRSOROOSPP-UHFFFAOYSA-N 0.000 description 2
- IAVREABSGIHHMO-UHFFFAOYSA-N 3-hydroxybenzaldehyde Chemical compound OC1=CC=CC(C=O)=C1 IAVREABSGIHHMO-UHFFFAOYSA-N 0.000 description 2
- LPYUENQFPVNPHY-UHFFFAOYSA-N 3-methoxycatechol Chemical compound COC1=CC=CC(O)=C1O LPYUENQFPVNPHY-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0594—Insulating resist or coating with special shaped edges
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Materials For Photolithography (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
本発明は、液晶ディスプレイ(LCD)、有機エレクトロルミネッセンス(有機EL)ディスプレイ、プラズマディスプレイパネル(PDP)などのフラットパネルディスプレイの作製に有用な金属配線付き基板の製造方法に関する。さらに詳しくは、本発明は、ポジ型感光性樹脂組成物を用いて逆テーパー状のレジストパターンを有する基板を得、それを用いてリフトオフ法により前記金属配線付き基板を製造する方法に関する。 The present invention relates to a method for manufacturing a substrate with metal wiring useful for manufacturing a flat panel display such as a liquid crystal display (LCD), an organic electroluminescence (organic EL) display, and a plasma display panel (PDP). More specifically, the present invention relates to a method for producing a substrate with metal wiring by a lift-off method using a positive photosensitive resin composition to obtain a substrate having an inversely tapered resist pattern.
リフトオフ法により基板上に金属配線を形成する場合、通常、断面が逆テーパー状のレジストパターンを形成することができるレジスト材料が用いられる。
例えば、リフトオフ法により導体パターンを形成する場合、(1)ネガ型感光性樹脂組成物を用いて基板上にレジスト膜を形成する、(2)該レジスト膜をパターン状に露光し、現像して、ネガ型レジストパターン(ネガ像)を形成する、(3)ネガ型レジストパターン上を含む基板全面に金属を蒸着させて蒸着膜を形成する、(4)基板全体を溶液に浸漬して、ネガ型レジストパターンを膨潤溶解させる、という一連の工程により、基板上に導体パターンを形成している。上記工程(4)では、ネガ型レジストパターン上にある蒸着膜も除去され、基板上の蒸着膜がパターン状に残ることになる。
図1(a)、(b)及び(c)は、リフトオフ法によるパターン形成プロセスの1例を示す説明図である。
前記工程(2)において、図1(a)に示すように、基板1上に断面が逆テーパー状のネガ型レジストパターン2が形成されておれば、次の工程(3)で基板全面に金属蒸着膜を形成すると、図1(b)で示されるように、基板1上とネガ型レジストパターン2上とに、それぞれ独立に蒸着膜3及び蒸着膜3'が形成される。そこで、工程(4)でネガ型レジストパターン2を除去すれば、その上にある蒸着膜3'も一緒に除去され、図1(c)で示されるように、基板1上には蒸着膜3のパターンだけが残ることになる。
レジストパターンが、矩形や順テーパー状、スソ引き状などの断面形状の場合には、前記工程(3)において、基板全面に金属蒸着膜を形成すると、レジストパターン側面にも蒸着膜が形成されるため、基板上の蒸着膜とレジストパターン上の蒸着膜とが連続して形成される。そのため、工程(4)でレジストパターンを除去すると、その上に形成された蒸着膜だけではなく、それに連続している基板上の蒸着膜も、その一部又は全部が剥離除去されてしまう。
従来、逆テーパー状のレジストパターンを形成できるフォトレジストとしては、主としてネガ型フォトレジストが用いられている。例えば(X)光線による露光、又は露光と引き続く熱処理によって架橋する成分、(Y)アルカリ可溶性樹脂、及び(Z)露光する光線を吸収する化合物を少なくとも一種含有し、かつ、アルカリ性水溶液を現像液とすることを特徴とするリフトオフ法によるパターン形成用ネガ型感光性組成物(例えば、特許文献1参照)が知られている。
しかしながら、ネガ型フォトレジストを用いる方法は、露光後ベーク処理が必要であったり、長い露光時間を要したりして、生産性が低く、またフォトレジスト自体が、比較的高価であるなどの問題を有している。
一方、これまで逆テーパー状のレジストパターンは、通常のポジ型フォトレジストでは形成が困難であると考えられてきた。そこで、レジスト組成物や工程を工夫などすることにより、逆テーパー状のレジストパターンを形成する方法が提案されている。例えばイメージリバーサルタイプのポジ型レジストを用いて、逆テーパー状のレジストパターンを形成し、さらにリフトオフ法により膜パターンを形成する方法(例えば、特許文献2参照)、裏面を粗化した透明基板を用い、それによる光の乱反射を利用して、ポジ型レジスト組成物でも逆テーパー状のレジストパターンを形成する方法(例えば、特許文献3参照)、ポジ型レジスト膜の上に環化ゴム系のネガ型レジスト膜を積層させることにより剥離操作を易化したリフトオフ法によるパターン形成方法(例えば、特許文献4参照)が提案されている。
しかしながら、これらの方法は、操作が煩雑である上、良好な形状のレジストパターンを形成しにくいなどの欠点を有していた。
For example, when a conductor pattern is formed by a lift-off method, (1) a resist film is formed on a substrate using a negative photosensitive resin composition, and (2) the resist film is exposed in a pattern and developed. Forming a negative resist pattern (negative image); (3) depositing metal on the entire surface of the substrate including the negative resist pattern to form a deposited film; and (4) immersing the entire substrate in the solution to form a negative. The conductor pattern is formed on the substrate by a series of steps of swelling and dissolving the mold resist pattern. In the step (4), the deposited film on the negative resist pattern is also removed, and the deposited film on the substrate remains in a pattern.
FIGS. 1A, 1B and 1C are explanatory views showing an example of a pattern forming process by a lift-off method.
In the step (2), as shown in FIG. 1 (a), if a
In the case where the resist pattern has a cross-sectional shape such as a rectangular shape, a forward taper shape, or a skirt shape, if a metal vapor deposition film is formed on the entire surface of the substrate in the step (3), a vapor deposition film is also formed on the side surface of the resist pattern. Therefore, the vapor deposition film on the substrate and the vapor deposition film on the resist pattern are continuously formed. Therefore, when the resist pattern is removed in the step (4), not only the deposited film formed thereon but also a part or all of the deposited film on the substrate continuous therewith is peeled off.
Conventionally, a negative photoresist has been mainly used as a photoresist capable of forming a reverse tapered resist pattern. For example, it contains at least one component that crosslinks by (X) light exposure or heat treatment subsequent to exposure, (Y) an alkali-soluble resin, and (Z) a light absorbing compound, and an alkaline aqueous solution as a developer. There is known a negative photosensitive composition for pattern formation by a lift-off method (see, for example, Patent Document 1).
However, the method using a negative photoresist requires a post-exposure baking process, requires a long exposure time, has low productivity, and the photoresist itself is relatively expensive. have.
On the other hand, it has been considered that a reverse-tapered resist pattern has been difficult to form with a normal positive photoresist. Therefore, a method of forming a reverse taper resist pattern by devising the resist composition or process has been proposed. For example, an image reversal type positive resist is used to form a reverse taper resist pattern, and a film pattern is formed by a lift-off method (see, for example, Patent Document 2), and a transparent substrate with a roughened back surface is used. , A method of forming a reverse-tapered resist pattern with a positive resist composition by utilizing diffused reflection of light (see, for example, Patent Document 3), and a cyclized rubber negative type on a positive resist film A pattern forming method based on a lift-off method that facilitates a peeling operation by laminating a resist film (see, for example, Patent Document 4) has been proposed.
However, these methods have drawbacks such as complicated operations and difficulty in forming a resist pattern having a good shape.
本発明は、このような事情のもとで、汎用の安価なポジ型フォトレジストにより簡単な操作で得られる逆テーパー状のレジストパターンを設けた基板を利用し、リフトオフ法により金属配線付き基板を安価に生産性よく製造する方法を提供することを目的としてなされたものである。 Under such circumstances, the present invention utilizes a substrate provided with a reverse taper-shaped resist pattern obtained by a simple operation with a general-purpose inexpensive positive-type photoresist, and a substrate with metal wiring by a lift-off method. The object of the present invention is to provide a method for manufacturing at low cost with high productivity.
本発明者らは、前記目的を達成するために鋭意研究を重ねた結果、ポジ型感光性樹脂組成物を用い、基板上に塗布して塗膜を形成し、この塗膜を減圧乾燥することにより、容易に逆テーパー状のレジストパターンを形成することができ、その目的を達成し得ることを見出し、この知見に基づいて本発明を完成するに至った。
すなわち、本発明は、
(1)(a)基板上に、(A)アルカリ可溶性樹脂、(B)キノンジアジド基含有化合物及び(C)溶剤を含むポジ型感光性樹脂組成物を塗布し、塗膜を形成する工程、
(b)前記塗膜を到達圧力5〜4,000Paの条件で減圧乾燥して感光層を形成する工程、
(c)前記感光層をパターン露光したのち、現像して逆テーパー状のレジストパターンを形成する工程、
(d)前記(c)工程により得られた逆テーパー状のレジストパターンを有する基板に対して金属を蒸着する工程、及び
(e)リフトオフ操作により、前記(d)工程で金属蒸着した基板から逆テーパー状のレジストパターンとその上の金属蒸着膜とを共に除去する工程
を有する、金属配線付き基板の製造方法、
を提供するものである。
本発明によれば、金属配線付き基板を安価に生産性よく製造することができる。
As a result of intensive studies to achieve the above object, the present inventors have used a positive photosensitive resin composition, applied on a substrate to form a coating film, and dried the coating film under reduced pressure. Thus, it has been found that an inversely tapered resist pattern can be easily formed and the object can be achieved, and the present invention has been completed based on this finding.
That is, the present invention
(1) (a) Applying a positive photosensitive resin composition containing (A) an alkali-soluble resin, (B) a quinonediazide group-containing compound, and (C) a solvent on a substrate to form a coating film;
(B) forming a photosensitive layer by drying the coating film under reduced pressure under a condition of ultimate pressure of 5 to 4,000 Pa ;
(C) a step of pattern-exposing the photosensitive layer and then developing to form a reverse-tapered resist pattern;
(D) a step of vapor-depositing a metal on the substrate having an inversely tapered resist pattern obtained in the step (c), and (e) a reverse from the substrate on which the metal is vapor-deposited in the step (d) by a lift-off operation. A method for producing a substrate with metal wiring, comprising a step of removing both the tapered resist pattern and the metal vapor deposition film thereon;
Is to provide.
According to the present invention, a substrate with metal wiring can be manufactured at low cost with high productivity.
本発明により、汎用の安価なポジ型フォトレジストにより簡単な操作で得られる逆テーパー状のレジストパターンを設けた基板を利用し、リフトオフ法により金属配線付き基板を安価に生産性よく製造する方法が提供される。 According to the present invention, there is provided a method for manufacturing a substrate with metal wiring at low cost and with high productivity by using a lift-off method using a substrate provided with a reverse tapered resist pattern obtained by a simple operation with a general-purpose inexpensive positive photoresist. Provided.
本発明の金属配線付き基板の製造方法は、以下に示す(a)工程、(b)工程、(c)工程、(d)工程及び(e)工程を有する。
なお、本明細書において、逆テーパー状のレジストパターンとは、図2(a)に示すように、基板上のレジストパターンの断面形状において、レジストパターンと基板との間に生ずる角度αが0°<α<90°を満たし得るレジストパターンをいう。
The manufacturing method of the board | substrate with a metal wiring of this invention has the following (a) process, (b) process, (c) process, (d) process, and (e) process.
In the present specification, as shown in FIG. 2A, an inversely tapered resist pattern means that an angle α generated between the resist pattern and the substrate is 0 ° in the cross-sectional shape of the resist pattern on the substrate. It refers to a resist pattern that can satisfy <α <90 °.
[(a)工程]
この工程は、基板上に、(A)アルカリ可溶性樹脂、(B)キノンジアジド基含有化合物及び(C)溶剤を含むポジ型感光性樹脂組成物を塗布し、塗膜を形成する工程である。
前記(A)成分のアルカリ可溶性樹脂は、アルカリ性水溶液等からなる現像液に可溶性の樹脂であれば特に限定されない。当該樹脂としては、公知の感光性樹脂組成物に使用されている樹脂、例えば、ノボラック樹脂、レゾール樹脂、アクリル樹脂、ポリビニルアルコール、スチレン−アクリル酸共重合体、ヒドロキシスチレン重合体、ポリビニルヒドロキシベンゾエート等を挙げることができる。中でも、ノボラック樹脂が好ましい。これらの樹脂は1種類を単独で使用してもよく、2種以上を組み合わせて使用してもよい。
前記ノボラック樹脂は、フェノール化合物とアルデヒド化合物とを縮合することによって得られるノボラック型のフェノール樹脂である。
ノボラック樹脂を製造するために用いられるフェノール化合物は、一価のフェノールであっても、レゾルシノール等の二価以上の多価フェノールであってもよい。
[Step (a)]
This step is a step of applying a positive photosensitive resin composition containing (A) an alkali-soluble resin, (B) a quinonediazide group-containing compound, and (C) a solvent on a substrate to form a coating film.
The alkali-soluble resin of the component (A) is not particularly limited as long as it is a resin that is soluble in a developer composed of an alkaline aqueous solution or the like. Examples of the resin include resins used in known photosensitive resin compositions, such as novolak resins, resol resins, acrylic resins, polyvinyl alcohol, styrene-acrylic acid copolymers, hydroxystyrene polymers, polyvinyl hydroxybenzoates, and the like. Can be mentioned. Among these, novolac resin is preferable. These resins may be used alone or in combination of two or more.
The novolac resin is a novolac type phenol resin obtained by condensing a phenol compound and an aldehyde compound.
The phenol compound used for producing the novolak resin may be a monovalent phenol or a dihydric or higher polyhydric phenol such as resorcinol.
一価のフェノール化合物の具体例としては、例えばフェノール;o−クレゾール、p−クレゾール、m−クレゾールのクレゾール;3,5−キシレノール、2,5−キシレノール、2,3−キシレノール、3,4−キシレノール等のキシレノール;2−エチルフェノール、3−エチルフェノール、4−エチルフェノール、2−プロピルフェノール、3−プロピルフェノール、4−プロピルフェノール、2−t−ブチルフェノール、3−t−ブチルフェノール、4−t−ブチルフェノール、3,5−ジエチルフェノール、2,5−ジエチルフェノール、2−t−ブチル−4−メチルフェノール、2−t−ブチル−5−メチルフェノール、6−t−ブチル−3−メチルフェノール、2,3,5−トリメチルフェノール、2,3,5−トリエチルフェノール等のアルキルフェノール;p−メトキシフェノール、m−メトキシフェノール、p−エトキシフェノール、m−エトキシフェノール、2,3−ジメトキシフェノール、2,5−ジメトキシフェノール、3,5−ジメトキシフェノール等のアルコキシフェノール;2−フェニルフェノール、3−フェニルフェノール、4−フェニルフェノール等のアリールフェノール;o−イソプロペニルフェノール、p−イソプロペニルフェノール、2−メチル−4−イソプロペニルフェノール、2−エチル−4−イソプロペニルフェノール等のアルケニルフェノール;等を挙げることができる。 Specific examples of the monovalent phenol compound include, for example, phenol; cresol of o-cresol, p-cresol, and m-cresol; 3,5-xylenol, 2,5-xylenol, 2,3-xylenol, 3,4- Xylenol such as xylenol; 2-ethylphenol, 3-ethylphenol, 4-ethylphenol, 2-propylphenol, 3-propylphenol, 4-propylphenol, 2-t-butylphenol, 3-t-butylphenol, 4-t -Butylphenol, 3,5-diethylphenol, 2,5-diethylphenol, 2-t-butyl-4-methylphenol, 2-t-butyl-5-methylphenol, 6-t-butyl-3-methylphenol, 2,3,5-trimethylphenol, 2,3,5-triethylphenol, etc. Alkylphenol; alkoxyphenol such as p-methoxyphenol, m-methoxyphenol, p-ethoxyphenol, m-ethoxyphenol, 2,3-dimethoxyphenol, 2,5-dimethoxyphenol, 3,5-dimethoxyphenol; Arylphenols such as phenylphenol, 3-phenylphenol, 4-phenylphenol; o-isopropenylphenol, p-isopropenylphenol, 2-methyl-4-isopropenylphenol, 2-ethyl-4-isopropenylphenol, etc. Alkenylphenol; and the like.
多価フェノール化合物の具体例としては、レゾルシノール、2−メチルレゾルシノール、4−メチルレゾルシノール、5−メチルレゾルシノール、2−メトキシレゾルシノール、4−メトキシレゾルシノール;ヒドロキノン;カテコール、4−t−ブチルカテコール、3−メトキシカテコール;4,4'−ジヒドロキシビフェニル、ビスフェノールA;ピロガロール;フロログリシノール;等を挙げることができる。
これらのフェノール化合物のうち、o−クレゾール、m−クレゾール、p−クレゾール、2,5−キシレノール、3,5−キシレノール、2,3,5−トリメチルフェノールが好ましい。
フェノール化合物は、1種類を単独で使用してもよく、2種以上を組み合わせて使用してもよい。
フェノール化合物と縮合させるアルデヒド化合物は、脂肪族アルデヒド、脂環式アルデヒド及び芳香族アルデヒドのいずれであってもよい。
Specific examples of the polyhydric phenol compound include resorcinol, 2-methylresorcinol, 4-methylresorcinol, 5-methylresorcinol, 2-methoxyresorcinol, 4-methoxyresorcinol; hydroquinone; catechol, 4-t-butylcatechol, 3- Methoxycatechol; 4,4′-dihydroxybiphenyl, bisphenol A; pyrogallol; phloroglicinol;
Of these phenol compounds, o-cresol, m-cresol, p-cresol, 2,5-xylenol, 3,5-xylenol and 2,3,5-trimethylphenol are preferred.
A phenol compound may be used individually by 1 type and may be used in combination of 2 or more type.
The aldehyde compound to be condensed with the phenol compound may be an aliphatic aldehyde, an alicyclic aldehyde, or an aromatic aldehyde.
脂肪族アルデヒドの具体例としては、ホルムアルデヒド、パラホルムアルデヒド、トリオキサン、アセトアルデヒド、プロピオンアルデヒド、n−ブチルアルデヒド、イソブチルアルデヒド、トリメチルアセトアルデヒド、n−ヘキシルアルデヒド、アクロレイン、クロトンアルデヒド等を挙げることができる。
脂環式アルデヒドの具体例としては、シクロヘキサンアルデヒド、シクロペンタンアルデヒド、フルフラール、フリルアクロレイン等を挙げることができる。
芳香族アルデヒドの具体例としては、ベンズアルデヒド、o−トルアルデヒド、m−トルアルデヒド、p−トルアルデヒド、p−エチルベンズアルデヒド、2,4−ジメチルベンズアルデヒド、2,5−ジメチルベンズアルデヒド、3,4−ジメチルベンズアルデヒド、3,5−ジメチルベンズアルデヒド、o−クロロベンズアルデヒド、m−クロロベンズアルデヒド、p−クロロベンズアルデヒド、o−ヒドロキシベンズアルデヒド、m−ヒドロキシベンズアルデヒド、p−ヒドロキシベンズアルデヒド、o−アニスアルデヒド、m−アニスアルデヒド、p−アニスアルデヒド、テレフタルアルデヒド、フェニルアセトアルデヒド、α−フェニルプロピオンアルデヒド、β−フェニルプロピオンアルデヒド、桂皮アルデヒド等を挙げることができる。
これらのアルデヒド化合物は、1種類を単独で使用してもよく、2種以上を組み合わせて使用してもよい。
Specific examples of the aliphatic aldehyde include formaldehyde, paraformaldehyde, trioxane, acetaldehyde, propionaldehyde, n-butyraldehyde, isobutyraldehyde, trimethylacetaldehyde, n-hexylaldehyde, acrolein, crotonaldehyde and the like.
Specific examples of the alicyclic aldehyde include cyclohexane aldehyde, cyclopentane aldehyde, furfural, and furyl acrolein.
Specific examples of the aromatic aldehyde include benzaldehyde, o-tolualdehyde, m-tolualdehyde, p-tolualdehyde, p-ethylbenzaldehyde, 2,4-dimethylbenzaldehyde, 2,5-dimethylbenzaldehyde and 3,4-dimethyl. Benzaldehyde, 3,5-dimethylbenzaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde, p-chlorobenzaldehyde, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, o-anisaldehyde, m-anisaldehyde, p -Anisaldehyde, terephthalaldehyde, phenylacetaldehyde, α-phenylpropionaldehyde, β-phenylpropionaldehyde, cinnamic aldehyde, etc. .
These aldehyde compounds may be used individually by 1 type, and may be used in combination of 2 or more type.
ノボラック樹脂の製造においてフェノール化合物とアルデヒド化合物との縮合反応は、酸性触媒の存在下、公知の方法で行えばよい。酸性触媒としては、塩酸、硫酸、ギ酸、酢酸、シュウ酸、p−トルエンスルホン酸等を使用することができる。かかる反応により得られる縮合反応生成物はそのままノボラック樹脂として使用することができる。
アルカリ可溶性樹脂は、低分子量成分を分別除去して用いることができる。低分子量成分を除去する方法としては、例えば異なる溶解性を有する2種の溶媒中で樹脂を分別する液−液分別法や、低分子量成分を遠心分離により除去する方法、薄膜蒸留法等を挙げることができる。
例えば、前記ノボラック樹脂の場合、得られた縮合反応生成物を良溶媒、例えばメタノール、エタノール等のアルコール溶媒;アセトン、メチルエチルケトン等のケトン溶媒;エチレングリコールモノエチルエーテルアセテート等のアルキレングリコール溶媒;テトラヒドロフラン等のエーテル溶媒;等に溶解する。次いで水中に注いで沈殿させることにより、低分子量成分が除去されたノボラック樹脂を得ることができる。
In the production of the novolak resin, the condensation reaction between the phenol compound and the aldehyde compound may be performed by a known method in the presence of an acidic catalyst. As the acidic catalyst, hydrochloric acid, sulfuric acid, formic acid, acetic acid, oxalic acid, p-toluenesulfonic acid and the like can be used. The condensation reaction product obtained by such a reaction can be used as it is as a novolak resin.
The alkali-soluble resin can be used after separating and removing low molecular weight components. Examples of the method for removing low molecular weight components include a liquid-liquid fractionation method for fractionating a resin in two solvents having different solubility, a method for removing low molecular weight components by centrifugation, a thin film distillation method, and the like. be able to.
For example, in the case of the novolak resin, the obtained condensation reaction product is used as a good solvent, for example, an alcohol solvent such as methanol or ethanol; a ketone solvent such as acetone or methyl ethyl ketone; an alkylene glycol solvent such as ethylene glycol monoethyl ether acetate; In ether solvent; Subsequently, the novolak resin from which the low molecular weight component was removed can be obtained by pouring into water and precipitating.
本発明において好適に使用されるアルカリ可溶性ノボラック樹脂は、その重量平均分子量が、通常、2,000〜20,000、好ましくは2,500〜12,000、更に好ましくは3,000〜8,000のものである。なお、重量平均分子量は、単分散のポリスチレンを標準試料とし、テトラヒドロフラン(THF)を溶離液としてゲルパーミエーションクロマトグラフィー(GPC)法により測定することができる。
本発明に用いるポジ型感光性樹脂組成物における(B)成分のキノンジアジド基含有化合物としては、従来、キノンジアジド−ノボラック樹脂系レジストで用いられている公知の感光剤を用いることができる。
The alkali-soluble novolak resin suitably used in the present invention has a weight average molecular weight of usually 2,000 to 20,000, preferably 2,500 to 12,000, more preferably 3,000 to 8,000. belongs to. The weight average molecular weight can be measured by a gel permeation chromatography (GPC) method using monodispersed polystyrene as a standard sample and tetrahydrofuran (THF) as an eluent.
As the quinonediazide group-containing compound as the component (B) in the positive photosensitive resin composition used in the present invention, known photosensitizers conventionally used in quinonediazide-novolak resin-based resists can be used.
キノンジアジド基含有化合物は一般にナフトキノンジアジドスルホン酸クロライドやベンゾキノンジアジドスルホン酸クロライド等の酸ハライドと、これと縮合反応可能な官能基(水酸基、アミノ基等。好ましくは水酸基。)を有する化合物とを反応させることによって得られるキノンジアジドスルホン酸エステルが好ましい。
酸ハライドとしては、具体的に、1,2−ナフトキノンジアジド−5−スルホニルクロライド、1,2−ナフトキノンジアジド−4−スルホニルクロライド、1,2−ナフトキノンジアジド−6−スルホニルクロライド等が好ましいものとして挙げられる。
The quinonediazide group-containing compound generally reacts with an acid halide such as naphthoquinonediazidesulfonic acid chloride or benzoquinonediazidesulfonic acid chloride and a compound having a functional group (hydroxyl group, amino group, etc., preferably hydroxyl group) capable of undergoing a condensation reaction therewith. The quinonediazide sulfonic acid ester obtained by this is preferable.
Specific examples of the acid halide include 1,2-naphthoquinone diazide-5-sulfonyl chloride, 1,2-naphthoquinone diazide-4-sulfonyl chloride, 1,2-naphthoquinone diazide-6-sulfonyl chloride, and the like. It is done.
また、本発明において好適に用いられる、酸ハライドと縮合反応可能な水酸基を有する化合物としては、例えば、2,3,4−トリヒドロキシベンゾフェノン、2,4,4'−トリヒドロキシベンゾフェノン、2,3,4,4'−テトラヒドロキシベンゾフェノン、2,2',4,4'−テトラヒドロキシベンゾフェノン、2,2',3,4,4'−ペンタヒドロキシベンゾフェノン等のポリヒドロキシベンゾフェノン;没食子酸メチル、没食子酸エチル、没食子酸プロピル等の没食子酸エステル;2,2−ビス(4−ヒドロキシフェニル)プロパン、2,2−ビス(2,4−ジヒドロキシフェニル)プロパン等のポリヒドロキシビスフェニルアルカン;トリス(4−ヒドロキシフェニル)メタン、1,1,1−トリス(4−ヒドロキシ−3−メチルフェニル)エタン、1,1,1−トリス(4−ヒドロキシフェニル)エタン、1,1−ビス(4−ヒドロキシ−3−メチルフェニル)−1−(4−ヒドロキシフェニル)エタン、ビス(4−ヒドロキシ−3−メチルフェニル)−2−ヒドロキシ−4−メトキシフェニルメタン、4,4'−(1−(4−(1−(4−ヒドロキシフェニル)−1−メチルエチル)フェニル)エチリデン)ビスフェノール等のポリヒドロキシトリスフェニルアルカン;1,1,2,2−テトラキス(4−ヒドロキシフェニル)エタン、1,1,2,2−テトラキス(3−メチル−4−ヒドロキシフェニル)エタン、1,1,3,3−テトラキス(4−ヒドロキシフェニル)プロパン等のポリヒドロキシテトラキスフェニルアルカン;α,α,α',α'−テトラキス(4−ヒドロキシフェニル)−3−キシレン、α,α,α',α'−テトラキス(4−ヒドロキシフェニル)−4−キシレン、α,α,α',α'−テトラキス(3−メチル−4−ヒドロキシフェニル)−3−キシレン等のポリヒドロキシテトラキスフェニルキシレン;2,6−ビス(2,4−ジヒドロキシベンジル)−p−クレゾール、2,6−ビス(2,4−ジヒドロキシ−3−メチルベンジル)−p−クレゾール、4,6−ビス(4−ヒドロキシベンジル)レゾルシン、4,6−ビス(4−ヒドロキシ−3−メチルベンジル)レゾルシン、4,6−ビス(4−ヒドロキシベンジル)−2−メチルレゾルシン、4,6−ビス(4−ヒドロキシ−3−メチルベンジル)−2−メチルレゾルシン等のフェノール化合物とホルムアルデヒドとのトリマー;前記フェノール化合物とホルムアルデヒドとのテトラマー;ノボラック樹脂;等を挙げることができる。
以上の酸ハライド及び水酸基を有する化合物は、1種類を単独で又は2種以上を組み合わせて用いることができる。
Examples of the compound having a hydroxyl group that can be condensed with an acid halide preferably used in the present invention include 2,3,4-trihydroxybenzophenone, 2,4,4′-trihydroxybenzophenone, and 2,3. , 4,4'-tetrahydroxybenzophenone, 2,2 ', 4,4'-tetrahydroxybenzophenone, 2,2', 3,4,4'-pentahydroxybenzophenone and other polyhydroxybenzophenones; methyl gallate, gallic acid Gallic acid esters such as ethyl acetate and propyl gallate; polyhydroxybisphenylalkanes such as 2,2-bis (4-hydroxyphenyl) propane and 2,2-bis (2,4-dihydroxyphenyl) propane; tris (4 -Hydroxyphenyl) methane, 1,1,1-tris (4-hydroxy-3-methylphenyl) ethane, 1,1,1-tris (4 Hydroxyphenyl) ethane, 1,1-bis (4-hydroxy-3-methylphenyl) -1- (4-hydroxyphenyl) ethane, bis (4-hydroxy-3-methylphenyl) -2-hydroxy-4-methoxy Polyhydroxytrisphenylalkanes such as phenylmethane, 4,4 ′-(1- (4- (1- (4-hydroxyphenyl) -1-methylethyl) phenyl) ethylidene) bisphenol; 1,1,2,2- Polyhydroxyl such as tetrakis (4-hydroxyphenyl) ethane, 1,1,2,2-tetrakis (3-methyl-4-hydroxyphenyl) ethane, 1,1,3,3-tetrakis (4-hydroxyphenyl) propane Tetrakisphenylalkane; α, α, α ′, α′-tetrakis (4-hydroxyphenyl) -3-xylene, α, α, α ′, α′-tetrakis (4-hydroxyphenyl) -4-ki Len, polyhydroxytetrakisphenylxylene such as α, α, α ′, α′-tetrakis (3-methyl-4-hydroxyphenyl) -3-xylene; 2,6-bis (2,4-dihydroxybenzyl) -p -Cresol, 2,6-bis (2,4-dihydroxy-3-methylbenzyl) -p-cresol, 4,6-bis (4-hydroxybenzyl) resorcin, 4,6-bis (4-hydroxy-3- Methylbenzyl) resorcinol, a phenol compound such as 4,6-bis (4-hydroxybenzyl) -2-methylresorcinol, 4,6-bis (4-hydroxy-3-methylbenzyl) -2-methylresorcin and formaldehyde A trimer; a tetramer of the phenol compound and formaldehyde; a novolac resin; and the like.
The above compounds having an acid halide and a hydroxyl group can be used alone or in combination of two or more.
例えば、酸ハライドと水酸基を有する化合物との反応は、通常、ジオキサン、N−メチルピロリドン、ジメチルアセトアミド等の有機溶媒中、トリエタノールアミン、炭酸アルカリ又は炭酸水素アルカリのような塩基性縮合剤の存在下で行う。得られるキノンジアジドスルホン酸エステルのエステル化率は、好ましくは50モル%以上、より好ましくは60モル%以上である。なお、エステル化率は、酸ハライドと水酸基を有する化合物との配合比により決定される。
この(B)成分のキノンジアジド基含有化合物の配合量は、前記(A)成分のアルカリ可溶性樹脂100質量部当たり、通常5〜50質量部、好ましくは15〜40質量部、より好ましくは20〜40質量部である。この配合量が上記範囲内であれば、逆テーパー状のレジストパターンの形成性がより良好で、しかも実効感度と残膜率、解像性などのレジスト特性のバランスに優れるポジ型感光性樹脂組成物が得られる。
For example, the reaction between an acid halide and a compound having a hydroxyl group is usually carried out in the presence of a basic condensing agent such as triethanolamine, alkali carbonate or alkali hydrogencarbonate in an organic solvent such as dioxane, N-methylpyrrolidone or dimethylacetamide. Do it below. The esterification rate of the obtained quinonediazide sulfonic acid ester is preferably 50 mol% or more, more preferably 60 mol% or more. The esterification rate is determined by the mixing ratio of the acid halide and the compound having a hydroxyl group.
The compounding amount of the quinonediazide group-containing compound as the component (B) is usually 5 to 50 parts by weight, preferably 15 to 40 parts by weight, more preferably 20 to 40 parts per 100 parts by weight of the alkali-soluble resin of the component (A). Part by mass. If this blending amount is within the above range, a positive photosensitive resin composition having better reverse taper resist pattern formability and excellent balance of resist characteristics such as effective sensitivity, residual film ratio, and resolution. A thing is obtained.
本発明に用いるポジ型感光性樹脂組成物における(C)成分の溶剤は、アルカリ可溶性樹脂及びキノンジアジド基含有化合物を溶解するものであれば特に限定されない。例えば、アルキレングリコール系溶剤、エーテル系溶剤、エステル系溶剤、炭化水素系溶剤、ケトン系溶剤、アミド系溶剤等を使用することができる。
これらの溶剤は、1種類を単独で又は2種以上を組み合わせて用いることができる。
溶剤の含有量は、後述する感光性樹脂組成物の固形分含量を勘案して適宜設定すればよい。
The solvent of the component (C) in the positive photosensitive resin composition used in the present invention is not particularly limited as long as it dissolves the alkali-soluble resin and the quinonediazide group-containing compound. For example, alkylene glycol solvents, ether solvents, ester solvents, hydrocarbon solvents, ketone solvents, amide solvents and the like can be used.
These solvents can be used alone or in combination of two or more.
What is necessary is just to set content of a solvent suitably in consideration of the solid content of the photosensitive resin composition mentioned later.
アルキレングリコール系溶剤の具体例としては、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル等のエチレングリコールアルキルエーテル;プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル等のプロピレングリコールモノアルキルエーテル;エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート等のエチレングリコールモノアルキルエーテルアセテート;プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート等のプロピレングリコールモノアルキルエーテルアセテート;等を挙げることができる。
エーテル系溶剤の具体例としては、テトラヒドロフラン等を挙げることができる。
エステル系溶剤の具体例としては、酢酸エチル、酢酸n−ブチル、3−メトキシプロピオン酸メチル、3−エトキシプロピオン酸エチル、乳酸メチル、乳酸エチル、γ−ブチロラクトン等を挙げることができる。
炭化水素系溶剤の具体例としては、トルエン、キシレン等の芳香族炭化水素等を挙げることができる。
ケトン系溶剤の具体例としては、メチルエチルケトン、2−ヘプタノン、シクロヘキサノン等を挙げることができる。
アミド系溶剤の具体例としては、N,N−ジメチルアセトアミド、N−メチルピロリドン等を挙げることができる。
Specific examples of the alkylene glycol solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, and other ethylene glycol alkyl ethers; propylene glycol monomethyl ether, propylene glycol Propylene glycol monoalkyl ethers such as monoethyl ether; Ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; Propylene glycol monomethyl ether acetate and propylene glycol monoethyl Propylene glycol monoalkyl ether acetates such as chromatography ether acetate; and the like.
Specific examples of the ether solvent include tetrahydrofuran.
Specific examples of the ester solvent include ethyl acetate, n-butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl lactate, ethyl lactate, and γ-butyrolactone.
Specific examples of the hydrocarbon solvent include aromatic hydrocarbons such as toluene and xylene.
Specific examples of the ketone solvent include methyl ethyl ketone, 2-heptanone, cyclohexanone and the like.
Specific examples of the amide solvent include N, N-dimethylacetamide, N-methylpyrrolidone and the like.
本発明に用いるポジ型感光性樹脂組成物には、所望により、公知の各種添加剤、例えば界面活性剤、該組成物と基板との密着性を向上するための密着促進剤、染料、感度促進剤、可塑剤、安定剤などを含有させることができる。
本発明で使用し得る界面活性剤としては、シリコーン系界面活性剤、フッ素系界面活性剤、炭化水素系界面活性剤が挙げられる。これらの界面活性剤は1種類を単独で使用してもよく、また、2種以上を組み合わせて使用してもよい。
シリコーン系界面活性剤としては、シロキサン結合を有する界面活性剤を挙げることができる。その具体例としては、SH28PA、SH29PA、SH30PA、ポリエーテル変性シリコーンオイルSF8410、同SF8427、同SH8400、ST80PA、ST83PA、ST86PA[以上、東レ・ダウコーニング・シリコーン社製];KP321、KP323、KP324、KP340、KP341[以上、信越シリコーン社製];TSF400、TSF401、TSF410、TSF4440、TSF4445、TSF4446[以上、東芝シリコーン社製]等を挙げることができる。
フッ素系界面活性剤としては、フルオロカーボン鎖を有する界面活性剤を挙げることができる。その具体例としては、フロリナート[商品名]FC−430、同FC−431[以上、住友スリーエム社製];サーフロン[商品名]S−141、同S−145、同S−381、同S−393[以上、旭硝子社製];エフトップ[商品名]EF301、同EF303、同EF351、同EF352[以上、ジェムコ社製];メガファック[商品名]F171、同F172、同F173、R−30[以上、大日本インキ化学工業社製]等を挙げることができる。
For the positive photosensitive resin composition used in the present invention, various known additives, for example, surfactants, adhesion promoters for improving the adhesion between the composition and the substrate, dyes, sensitivity enhancement, if desired. An agent, a plasticizer, a stabilizer and the like can be contained.
Examples of the surfactant that can be used in the present invention include silicone surfactants, fluorine surfactants, and hydrocarbon surfactants. One of these surfactants may be used alone, or two or more thereof may be used in combination.
Examples of the silicone surfactant include surfactants having a siloxane bond. Specific examples thereof include SH28PA, SH29PA, SH30PA, polyether-modified silicone oil SF8410, SF8427, SH8400, ST80PA, ST83PA, ST86PA [above, manufactured by Toray Dow Corning Silicone]; KP321, KP323, KP324, KP340 , KP341 [above, manufactured by Shin-Etsu Silicone]; TSF400, TSF401, TSF410, TSF4440, TSF4445, TSF4446 [above, manufactured by Toshiba Silicone Co., Ltd.] and the like.
Examples of the fluorosurfactant include a surfactant having a fluorocarbon chain. Specific examples thereof include Fluorinert [trade name] FC-430, FC-431 [above, manufactured by Sumitomo 3M Limited]; Surflon [trade name] S-141, S-145, S-381, S- 393 [above, manufactured by Asahi Glass Co., Ltd.]; Ftop [product name] EF301, EF303, EF351, EF352, EF352 [above, manufactured by Gemco]; Megafuck [tradename] F171, F172, F173, R-30 [Above, Dainippon Ink & Chemicals, Inc.] and the like.
また、フッ素原子(フルオロカーボン鎖)を有するシリコーン系界面活性剤も使用することができる。その具体例としては、メガファック[商品名]R08、同F470、同F471、同F472SF、同F475等を挙げることができる。
炭化水素系界面活性剤としては、ポリオキシエチレン鎖を有する界面活性剤を挙げることができる。その具体例としては、ポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンオレイルエーテル、ポリオキシエチレンオクチルフェニルエーテル、ポリオキシエチレンノニルフェニルエーテル、ポリエチレングリコールジラウレート、ポリエチレングリコールジステアレート等を挙げることができる。
これらの界面活性剤の使用量は、ポジ型感光性樹脂組成物に対して、100〜5,000質量ppm、好ましくは200〜2,000質量ppmである。この範囲で界面活性剤を使用すると、塗布膜に塗布ムラを発生せず好ましい。
A silicone surfactant having a fluorine atom (fluorocarbon chain) can also be used. Specific examples thereof include Megafuck [trade name] R08, F470, F471, F472SF, F475, and the like.
Examples of the hydrocarbon surfactant include a surfactant having a polyoxyethylene chain. Specific examples thereof include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate and the like. be able to.
The usage-amount of these surfactant is 100-5,000 mass ppm with respect to positive type photosensitive resin composition, Preferably it is 200-2,000 mass ppm. When the surfactant is used within this range, it is preferable that coating unevenness does not occur in the coating film.
密着促進剤としては、例えば、メラミン化合物及びシラン化合物が挙げられる。
メラミン化合物の具体例としては、サイメル(Cymel)−300、303[日本サイテックインダストリーズ社製];MW−30MH、MW−30、MS−11、MS−001、MX−750、MX−706[以上、三和ケミカル社製]等が挙げられる。メラミン化合物の使用量は、アルカリ可溶性樹脂100質量部に対して、通常、20質量部以下、好ましくは0.5〜18質量部、更に好ましくは1〜15質量部である。
一方、シラン化合物の具体例としては、ビニルトリメトキシシラン、ビニルトリエトキシシラン、ビニルトリス(2−メトキシエトキシ)シラン、N−(2−アミノエチル)−3−アミノプロピルメチルジメトキシシラン、N−(2−アミノエチル)−3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシラン、3−グリシドキシプロピルトリメトキシシラン、3−グリシドキシプロピルメチルジメトキシシラン、2−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン、3−クロロプロピルメチルジメトキシシラン、3−クロロプロピルトリメトキシシラン、3−メタクリロキシプロピルトリメトキシシラン、3−メルカプトプロピルトリメトキシシラン等が挙げられる。
シラン化合物の使用量は、アルカリ可溶性樹脂100質量部に対して、通常、2質量部以下、好ましくは0.001〜1質量部、更に好ましくは0.005〜0.8質量部である。
染料の例としてはトリフェニルメタン系染料、シアニン染料、ジアゾ染料、スチリル染料等を挙げることができる。
感度促進剤としては、前記感光剤の構成成分として挙げた水酸基を有する化合物を用いることができる。感度促進剤の具体例としては、ポリヒドロキシベンゾフェノン類、没食子酸エステル類、ポリヒドロキシビスフェニルアルカン類、ポリヒドロキシトリスフェニルアルカン類、ポリヒドロキシテトラキスフェニルアルカン類などを挙げることができる。中でもポリヒドロキシトリスフェニルアルカン類、ポリヒドロキシベンゾフェノン類などが特に好ましい。
Examples of the adhesion promoter include melamine compounds and silane compounds.
Specific examples of the melamine compound include Cymel-300 and 303 (manufactured by Nippon Cytec Industries, Inc.); MW-30MH, MW-30, MS-11, MS-001, MX-750, MX-706 [or more, Sanwa Chemical Co., Ltd.] and the like. The amount of the melamine compound used is usually 20 parts by mass or less, preferably 0.5 to 18 parts by mass, and more preferably 1 to 15 parts by mass with respect to 100 parts by mass of the alkali-soluble resin.
On the other hand, specific examples of the silane compound include vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2 -Aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ) Ethyltrimethoxysilane, 3-chloropropylmethyldimethoxysilane, 3-chloropropyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane and the like.
The amount of the silane compound used is usually 2 parts by mass or less, preferably 0.001 to 1 part by mass, and more preferably 0.005 to 0.8 part by mass with respect to 100 parts by mass of the alkali-soluble resin.
Examples of the dye include triphenylmethane dyes, cyanine dyes, diazo dyes, styryl dyes, and the like.
As the sensitivity accelerator, the compounds having a hydroxyl group exemplified as a constituent component of the photosensitive agent can be used. Specific examples of the sensitivity promoter include polyhydroxybenzophenones, gallic esters, polyhydroxybisphenylalkanes, polyhydroxytrisphenylalkanes, polyhydroxytetrakisphenylalkanes and the like. Of these, polyhydroxytrisphenylalkanes and polyhydroxybenzophenones are particularly preferred.
本発明に用いるポジ型感光性樹脂組成物は、上記のアルカリ可溶性樹脂、キノンジアジド基含有化合物、更に所望により、界面活性剤、密着促進剤、染料、感度促進剤、可塑剤、安定剤等の添加剤を、溶剤と混合し、各種の混合機や分散機を使用して混合溶解することによって調製することができる。各成分の混合順序等の限定はない。
本発明に用いるポジ型感光性樹脂組成物の固形分含量(溶剤以外の成分含有量)は、特に限定されないが、通常、6〜30質量%、好ましくは7〜25質量%、更に好ましくは8〜20質量%に調整する。固形分含量をこの範囲内に設定することにより、塗布ムラを生じることなく、塗布膜を形成することができる。
(a)工程で、用いられる基板としては、特に限定されず、シリコン基板、ガラス基板、ITO膜形成基板、クロム膜形成基板、樹脂基板などの公知の基板が挙げられる。中でも、本発明方法においては、大型基板、通常、正方形乃至長方形を有しており、少なくとも一辺の長さが800mm以上、好ましくは、少なくとも一辺の長さが1,000mm以上である大型基板が好適に用いられる。
The positive photosensitive resin composition used in the present invention comprises the above-mentioned alkali-soluble resin, quinonediazide group-containing compound, and addition of a surfactant, an adhesion promoter, a dye, a sensitivity promoter, a plasticizer, a stabilizer, etc., if desired. The agent can be prepared by mixing with a solvent and mixing and dissolving using various mixers and dispersers. There is no limitation on the mixing order of the components.
The solid content (component content other than the solvent) of the positive photosensitive resin composition used in the present invention is not particularly limited, but is usually 6 to 30% by mass, preferably 7 to 25% by mass, and more preferably 8%. Adjust to ˜20 mass%. By setting the solid content within this range, a coating film can be formed without causing coating unevenness.
The substrate used in the step (a) is not particularly limited, and examples thereof include known substrates such as a silicon substrate, a glass substrate, an ITO film formation substrate, a chromium film formation substrate, and a resin substrate. Among them, in the method of the present invention, a large substrate, usually a square or rectangular shape, having a length of at least one side of 800 mm or more, and preferably a length of at least one side of 1,000 mm or more is preferable. Used for.
これらの基板上に、前述のポジ型感光性樹脂組成物を塗布する方法としては、従来行われている塗布方法のいずれであってもよく、例えばスプレー法、ロールコート法、回転塗布法、スピンレススリットコート法などの各種の方法を用いることができる。
これらの方法の中でスピンレススリットコート法が好ましい。スピンレススリットコート法は、ポジ型感光性樹脂組成物を供給するスリットを移動させることにより、基板にスリットが接触することなく該感光性樹脂組成物を塗布するものである。
スピンレススリットコート法による塗布には、スピンレスコーター[東京応化工業社製]、テーブルコーター[中外炉工業社製]、リニアコーター[大日本スクリーン製造社製]、ヘッドコーター[平田機工社製]、スリットダイコーター[東レエンジニアリング社製]、東レスリットコーター[東レ社製]等の、市販のコーターを用いればよい。
このようにして基板上にポジ型感光性樹脂組成物の塗膜が形成される。
As a method for applying the above-mentioned positive photosensitive resin composition onto these substrates, any of the conventionally applied application methods may be used. For example, a spray method, a roll coating method, a spin coating method, a spin method, and the like. Various methods such as a less slit coating method can be used.
Among these methods, the spinless slit coating method is preferable. In the spinless slit coating method, the photosensitive resin composition is applied without moving the slit for supplying the positive photosensitive resin composition without contacting the slit with the substrate.
For spinless slit coating, spinless coater [manufactured by Tokyo Ohka Kogyo Co., Ltd.], table coater [manufactured by Chugai Furnace Co., Ltd.], linear coater [manufactured by Dainippon Screen Mfg. Co., Ltd.], head coater [manufactured by Hirata Kiko Co., Ltd.] A commercially available coater such as a slit die coater [manufactured by Toray Engineering Co., Ltd.] or a Toray slit coater [manufactured by Toray Industries, Inc.] may be used.
In this way, a coating film of the positive photosensitive resin composition is formed on the substrate.
[(b)工程]
この工程は、前記(a)工程で基板上に形成された塗膜を減圧乾燥することにより、感光層を形成する工程である。
減圧乾燥は、公知の減圧乾燥装置を用いて行うことができる。減圧乾燥の条件は、到達圧力と、装置の圧力条件が到達圧力に達するまでの時間とにより規定される。減圧乾燥は、通常、室温にて、到達圧力5〜4,000Pa、好ましくは10〜1,000Pa、より好ましくは20〜300Paの条件で行えばよい。この到達圧力が5Pa未満では実用的でないし、4,000Paを超えると逆テーパー状のレジストパターンが形成されにくい傾向がある。なお、本明細書において「減圧」とは13,000Pa以下にまで圧力を低下させることをいう。減圧乾燥に要する時間に格別な制限はなく、膜厚、基板の大きさ、感光性樹脂組成物の溶剤量、減圧ポンプの排気能力、減圧部分の容積などを考慮して任意に設定すればよいが、通常1秒間〜30分間、好ましくは5秒間〜10分間、より好ましくは5秒間〜5分間、特に好ましくは30秒間〜2分間である。
減圧乾燥した塗膜は、所望によりプリベイクして流動性のない感光層とする。上記プリベイクは、通常60〜120℃で、10〜600秒間程度加熱することにより行われる。該感光層の厚さは、通常0.5〜5μm程度、好ましくは0.8〜4μmである。
[Step (b)]
This step is a step of forming a photosensitive layer by drying the coating film formed on the substrate in the step (a) under reduced pressure.
The vacuum drying can be performed using a known vacuum drying apparatus. The conditions for drying under reduced pressure are defined by the ultimate pressure and the time until the pressure condition of the apparatus reaches the ultimate pressure. The drying under reduced pressure is usually performed at room temperature under the conditions of ultimate pressure of 5 to 4,000 Pa, preferably 10 to 1,000 Pa, more preferably 20 to 300 Pa. If this ultimate pressure is less than 5 Pa, it is not practical, and if it exceeds 4,000 Pa, a reverse-tapered resist pattern tends to be hardly formed. In the present specification, “reduced pressure” refers to reducing the pressure to 13,000 Pa or less. There is no particular restriction on the time required for drying under reduced pressure, and it may be arbitrarily set in consideration of the film thickness, the size of the substrate, the amount of the solvent of the photosensitive resin composition, the exhaust capacity of the reduced pressure pump, the volume of the reduced pressure portion, etc. However, it is usually 1 second to 30 minutes, preferably 5 seconds to 10 minutes, more preferably 5 seconds to 5 minutes, and particularly preferably 30 seconds to 2 minutes.
The coating film dried under reduced pressure is pre-baked as desired to form a non-fluid photosensitive layer. The prebaking is usually performed by heating at 60 to 120 ° C. for about 10 to 600 seconds. The thickness of the photosensitive layer is usually about 0.5 to 5 μm, preferably 0.8 to 4 μm.
[(c)工程]
この工程は、前記(b)工程で形成された感光層をパターン露光したのち、現像して逆テーパー状のレジストパターンを形成する工程である。
具体的には、該感光層に、通常、マスクパターンを介して活性光線を照射し、感光層中に所定形状の潜像パターンを形成する(パターン露光)。次いで、この潜像パターンをアルカリ現像液で現像して所望のレジストパターンを形成する。
本発明で用いる活性光線の種類は特に限定されず、例えば、可視光線、紫外線、遠紫外線、X線等を挙げることができ、特に可視光線、紫外線が好ましい。照射する光線量は感光層の使用目的、膜の厚み等を勘案して任意に設定することができる。
潜像パターンの現像に用いるアルカリ現像液は、特に限定されない。該現像液に使用するアルカリ成分の具体例としては、テトラメチルアンモニウムヒドロキシド、炭酸ナトリウム、炭酸水素ナトリウム、水酸化ナトリウム、水酸化カリウム等を挙げることができる。これらの現像液は、通常、0.1〜5質量%水溶液として使用される。
パターンの現像後、通常、水で洗浄し、更に圧縮空気や圧縮窒素で風乾する。次いで、所望により、このパターンをホットプレート、オーブンなどの加熱装置により、所定温度、例えば100〜250℃で、所定時間、例えばホットプレート上なら2〜60分間程度、オーブン中では2〜90分間程度加熱(ポストベーク)をすることによって、目的とするレジストパターンを得ることができる。
このようにして得られたレジストパターンは、逆テーパー状の断面形状を有している。
[(C) Step]
In this step, the photosensitive layer formed in the step (b) is subjected to pattern exposure and then developed to form a reverse tapered resist pattern.
Specifically, the photosensitive layer is usually irradiated with actinic rays through a mask pattern to form a latent image pattern having a predetermined shape in the photosensitive layer (pattern exposure). Next, the latent image pattern is developed with an alkali developer to form a desired resist pattern.
The kind of actinic rays used in the present invention is not particularly limited, and examples thereof include visible rays, ultraviolet rays, far ultraviolet rays, and X-rays, and visible rays and ultraviolet rays are particularly preferable. The amount of light to be irradiated can be arbitrarily set in consideration of the purpose of use of the photosensitive layer, the thickness of the film, and the like.
The alkali developer used for developing the latent image pattern is not particularly limited. Specific examples of the alkali component used in the developer include tetramethylammonium hydroxide, sodium carbonate, sodium bicarbonate, sodium hydroxide, potassium hydroxide and the like. These developers are usually used as a 0.1 to 5% by mass aqueous solution.
After developing the pattern, it is usually washed with water and then air-dried with compressed air or compressed nitrogen. Then, if desired, this pattern is heated by a heating device such as a hot plate or oven at a predetermined temperature, for example, 100 to 250 ° C., for a predetermined time, for example, about 2 to 60 minutes on the hot plate, or about 2 to 90 minutes in the oven. A target resist pattern can be obtained by heating (post-baking).
The resist pattern thus obtained has a reverse tapered cross-sectional shape.
[(d)工程]
この工程は、前記(c)工程により得られた逆テーパー状のレジストパターンを有する基板に対して金属を蒸着する工程である。
金属の蒸着は、通常、逆テーパー状のレジストパターンを有する基板の全面に対し、垂直方向で金属を蒸着させて行えばよい。それにより、基板の全面に金属蒸着膜が形成される。蒸着対象の金属としては、例えば、白金(Pt)、金(Au)、パラジウム(Pd)、クロム(Cr)、ニッケル(Ni)、アルミニウム(Al)、銀(Ag)、タンタル(Ta)、タングステン(W)、銅(Cu)、チタン(Ti)、インジウム(In)、錫(Sn)、マグネシウム(Mg)等の金属、あるいは、これらの金属元素を含む合金が挙げられる。これらの金属は、それぞれ単独で又は2種以上を混合して用いることができる。
金属の蒸着は、通常、市販の真空蒸着装置を用いて行えばよい。蒸着条件としては、特に限定はないが、例えば、真空度は1×10-3〜1×10-6Pa、蒸着速度は0.1〜10nm/秒の範囲で適宜選定すればよい。蒸着時間は、金属蒸着膜の膜厚に応じて適宜設定すればよい。
金属蒸着膜の膜厚としては、特に限定はないが、通常、5〜1,000nmである。
[Step (d)]
This step is a step of depositing a metal on the substrate having the reverse tapered resist pattern obtained in the step (c).
The vapor deposition of the metal is usually performed by vapor-depositing the metal in the vertical direction on the entire surface of the substrate having the reverse taper resist pattern. Thereby, a metal vapor deposition film is formed on the entire surface of the substrate. Examples of the metal to be deposited include platinum (Pt), gold (Au), palladium (Pd), chromium (Cr), nickel (Ni), aluminum (Al), silver (Ag), tantalum (Ta), and tungsten. Examples thereof include metals such as (W), copper (Cu), titanium (Ti), indium (In), tin (Sn), and magnesium (Mg), or alloys containing these metal elements. These metals can be used alone or in admixture of two or more.
The vapor deposition of the metal is usually performed using a commercially available vacuum vapor deposition apparatus. Vapor deposition conditions are not particularly limited. For example, the degree of vacuum may be appropriately selected within the range of 1 × 10 −3 to 1 × 10 −6 Pa and the vapor deposition rate within the range of 0.1 to 10 nm / second. What is necessary is just to set vapor deposition time suitably according to the film thickness of a metal vapor deposition film.
Although there is no limitation in particular as a film thickness of a metal vapor deposition film | membrane, it is 5-1,000 nm normally.
[(e)工程]
この工程は、リフトオフ操作により、前記(d)工程で金属蒸着した基板から逆テーパー状のレジストパターンとその上の金属蒸着膜とを共に除去する工程である。
前記(d)工程により基板全面に金属蒸着膜を形成すると、例えば、図1(b)で示されるように、基板上と逆テーパー状のレジストパターン上とにそれぞれ独立に金属蒸着膜が形成されることになる。そこで、リフトオフ操作により、かかるレジストパターンとその上の金属蒸着膜とを共に除去すれば、基板上には、所定のパターンを有する金属蒸着膜が残る。残った金属蒸着膜は金属配線を構成する。
前記リフトオフ操作は公知の方法に従って行えばよい。例えば、(d)工程で得られた金属蒸着膜が形成された基板を、23〜150℃の温度で、ジメチルスルホキシド、N−メチルピロリドン、アセトン、ジメチルアセトアミド、プロピレングリコールメチルエーテル、モノエタノールアミン、γ−ブチロラクトン又はこれらの混合溶剤中あるいは市販のレジスト用剥離液中に、通常、1〜30分間程度浸漬し、レジストパターンとその上の金属蒸着膜とを共に除去すればよい。基板を浸漬する際は、所望により撹拌を行ってもよい。
以上により所望の金属配線付き基板が得られる。本発明においては、汎用の安価なポジ型フォトレジストにより簡単な操作で得られる逆テーパー状のレジストパターンを設けた基板を利用するため、金属配線付き基板を安価に生産性よく製造することができる。
[(E) Process]
This step is a step of removing both the reverse-tapered resist pattern and the metal vapor deposition film thereon from the metal vapor-deposited substrate in the step (d) by a lift-off operation.
When the metal vapor deposition film is formed on the entire surface of the substrate by the step (d), for example, as shown in FIG. 1B, the metal vapor deposition film is formed independently on the substrate and on the reverse tapered resist pattern. Will be. Therefore, if both the resist pattern and the metal vapor deposition film thereon are removed by a lift-off operation, a metal vapor deposition film having a predetermined pattern remains on the substrate. The remaining metal deposition film constitutes a metal wiring.
The lift-off operation may be performed according to a known method. For example, the substrate on which the metal vapor deposition film obtained in the step (d) is formed is dimethyl sulfoxide, N-methylpyrrolidone, acetone, dimethylacetamide, propylene glycol methyl ether, monoethanolamine, at a temperature of 23 to 150 ° C. What is necessary is just to immerse in (gamma) -butyrolactone, these mixed solvents, or a commercially available resist stripping solution normally for about 1 to 30 minutes, and to remove both a resist pattern and the metal vapor deposition film on it. When the substrate is immersed, stirring may be performed as desired.
Thus, a desired substrate with metal wiring is obtained. In the present invention, since a substrate provided with a reverse taper-shaped resist pattern obtained by a simple operation with a general-purpose inexpensive positive type photoresist is used, a substrate with metal wiring can be manufactured inexpensively with high productivity. .
また、本発明は、その一態様として、(a)基板上に、(A)アルカリ可溶性樹脂、(B)キノンジアジド基含有化合物及び(C)溶剤を含むポジ型感光性樹脂組成物を塗布し、塗膜を形成する工程、(b)前記塗膜を減圧乾燥して感光層を形成する工程、及び(c)前記感光層をパターン露光したのち、現像して逆テーパー状のレジストパターンを形成する工程を有する、逆テーパー状のレジストパターンを有する基板の製造方法を提供する。かかる方法は、本発明の金属配線付き基板の製造方法について説明した前記(a)工程から(c)工程を有するものであり、それらの工程に係る前記記載に従って容易に実施することができる。本発明により得られる逆テーパー状のレジストパターンを有する基板は、本発明の金属配線付き基板の製造方法等においてリフトオフ用レジストパターンとして用いられる他、有機エレクトロルミネッセンス表示装置の隔壁材料などとしても好適に用いられる。 Moreover, this invention apply | coats the positive photosensitive resin composition containing (A) alkali-soluble resin, (B) quinonediazide group containing compound, and (C) solvent on the (a) board | substrate as one aspect | mode, A step of forming a coating film, (b) a step of drying the coating film under reduced pressure to form a photosensitive layer, and (c) pattern-exposing the photosensitive layer, and then developing to form an inversely tapered resist pattern. Provided is a method for manufacturing a substrate having a reverse taper-shaped resist pattern. This method includes the steps (a) to (c) described for the method for manufacturing a substrate with metal wiring according to the present invention, and can be easily carried out according to the description relating to those steps. The substrate having a reverse-tapered resist pattern obtained by the present invention is used not only as a lift-off resist pattern in the method for producing a substrate with metal wiring of the present invention, but also as a partition material for an organic electroluminescence display device. Used.
次に、本発明を実施例により、さらに詳細に説明するが、本発明は、これらの例によってなんら限定されるものではない。 EXAMPLES Next, although an Example demonstrates this invention further in detail, this invention is not limited at all by these examples.
実施例1
(1)ポジ型感光性樹脂組成物の調製
m−クレゾール/p−クレゾール混合クレゾール(質量混合比=5:5)とホルムアルデヒドとをシュウ酸の存在下、縮重合させて得られたノボラック樹脂(重量平均分子量=約5500)17.7質量部、2,3,4,4'−テトラヒドロキシベンゾフェノンと1,2−ナフトキノンジアジド−5−スルホン酸クロライドとから得られたエステル化率70モル%のキノンジアジド基含有化合物4.3質量部、シロキサン結合を有するシリコーン系界面活性剤「SH29PA」[東レ・ダウコーニング・シリコーン社製]0.05質量部、プロピレングリコールモノメチルエーテルアセテート(PGMEA)107.4質量部を混合してポジ型感光性樹脂組成物(レジスト溶液)を得た。
(2)逆テーパー状のレジストパターンの形成
ガラス基板上に、スリットコーターを用いて、前記(1)で得たレジスト溶液を塗布し、次いで減圧乾燥を、室温(23℃)にて、到達圧力266Paの条件で25秒間実施した。引き続き、110℃で150秒間、常圧でホットプレート上で加熱(プリベイク)して、膜圧2.1μmの感光層(レジスト膜)を形成した。このレジスト膜の上から線幅10μmのラインアンドスペースパターンのマスクを用いて、ミラープロジェクションアライナー「MPA7000」[製品名:キヤノン社製]で露光して、潜像パターンを得た。露光量はラインの線幅が10μmとなるエネルギー量とした。露光後、2.38質量%テトラメチルアンモニウムヒドロキシド水溶液で70秒間現像処理し、レジストパターンを有する基板を得た。
この基板上のレジストパターン断面を走査型電子顕微鏡[日本電子社製「JSM−5400」]で観察(倍率:15,000倍)したところ、図2(a)で示すように逆テーパー状であった。
(3)金属蒸着膜パターンの形成
次いで、市販の真空蒸着装置(アルバック機工社製)にて前記(2)で得られた基板の全面に真空度1×10-4Pa、蒸着速度4nm/秒で膜厚200nmのアルミニウム膜を真空蒸着した。このアルミニウム膜を蒸着した基板を40℃のジメチルスルホキシド中に1分間浸漬し、レジストパターン及びその上のアルミニウム膜を剥離した。剥離後の基板について、光学顕微鏡により金属蒸着膜のパターンを観察(倍率:200倍)した結果、レジストパターンが残渣なく剥離され、かつ、基板上に所望の金属蒸着膜のパターン(金属配線)が形成されていることが観察された。すなわち、所望の金属配線付き基板が得られた。
第1表に、減圧乾燥処理時の到達圧力及び処理時間と共に、レジストパターンの断面形状及び剥離後の金属蒸着膜のパターン形状の評価結果を示す。レジストパターンの断面形状については、逆テーパー状のレジストパターンが形成されている場合を良好と、順テーパー状のレジストパターンが形成されている場合を不良と、それぞれ評価した。剥離後の金属蒸着膜のパターン形状については、レジストパターンが残渣なく剥離され、かつ、基板上に所望の金属蒸着膜のパターンが形成されている場合を良好と、レジストパターンがきれいに剥離できず残渣などが残ったり、レジストパターンが剥離できたとしても基板に残すべき金属蒸着膜まで剥離され、所望の金属蒸着膜のパターンが形成されていない場合を不良と、それぞれ評価した。
Example 1
(1) Preparation of positive-type photosensitive resin composition Novolak resin obtained by condensation polymerization of m-cresol / p-cresol mixed cresol (mass mixing ratio = 5: 5) and formaldehyde in the presence of oxalic acid ( (Weight average molecular weight = about 5500) 17.7 parts by mass of 70 mol% of esterification obtained from 2,3,4,4′-tetrahydroxybenzophenone and 1,2-naphthoquinonediazide-5-sulfonic acid chloride 4.3 parts by mass of a quinonediazide group-containing compound, a silicone-based surfactant “SH29PA” having a siloxane bond (manufactured by Toray Dow Corning Silicone), 0.05 parts by mass, and 107.4 parts by weight of propylene glycol monomethyl ether acetate (PGMEA) Parts were mixed to obtain a positive photosensitive resin composition (resist solution).
(2) Formation of reverse-tapered resist pattern On the glass substrate, the resist solution obtained in (1) above was applied using a slit coater, and then dried under reduced pressure at room temperature (23 ° C) at the ultimate pressure. The test was carried out at 266 Pa for 25 seconds. Subsequently, it was heated (prebaked) on a hot plate at 110 ° C. for 150 seconds at normal pressure to form a photosensitive layer (resist film) having a film pressure of 2.1 μm. A latent image pattern was obtained by exposing with a mirror projection aligner “MPA7000” (product name: manufactured by Canon Inc.) using a line and space pattern mask having a line width of 10 μm from above the resist film. The exposure amount was an energy amount at which the line width was 10 μm. After the exposure, the substrate was developed with a 2.38 mass% tetramethylammonium hydroxide aqueous solution for 70 seconds to obtain a substrate having a resist pattern.
When the cross section of the resist pattern on this substrate was observed with a scanning electron microscope [“JSM-5400” manufactured by JEOL Ltd.] (magnification: 15,000 times), the resist pattern cross-section was in an inversely tapered shape as shown in FIG. It was.
(3) Formation of metal vapor deposition film pattern Next, a vacuum degree of 1 × 10 −4 Pa and a vapor deposition rate of 4 nm / second are formed on the entire surface of the substrate obtained in (2) above using a commercially available vacuum vapor deposition apparatus (manufactured by ULVAC KIKOH Co., Ltd.). A 200 nm thick aluminum film was vacuum deposited. The substrate on which the aluminum film was deposited was immersed in dimethyl sulfoxide at 40 ° C. for 1 minute to peel off the resist pattern and the aluminum film thereon. About the board | substrate after peeling, as a result of observing the pattern of a metal vapor deposition film with an optical microscope (magnification: 200 times), a resist pattern is peeled without a residue, and the pattern (metal wiring) of a desired metal vapor deposition film is on a board | substrate. It was observed that it was formed. That is, a desired substrate with metal wiring was obtained.
Table 1 shows the evaluation results of the cross-sectional shape of the resist pattern and the pattern shape of the metal vapor-deposited film after peeling, along with the ultimate pressure and processing time during the reduced-pressure drying treatment. Regarding the cross-sectional shape of the resist pattern, the case where a reverse-tapered resist pattern was formed was evaluated as good, and the case where a forward-tapered resist pattern was formed was evaluated as poor. As for the pattern shape of the metal vapor deposition film after peeling, the resist pattern can be peeled without residue and the pattern of the desired metal vapor deposition film is formed on the substrate. Even when the resist pattern could be peeled off, the metal vapor deposition film to be left on the substrate was peeled off, and the case where the desired metal vapor deposition film pattern was not formed was evaluated as defective.
実施例2、3
減圧乾燥時の到達圧力を変えた以外は、実施例1と同様の方法で金属配線付き基板をそれぞれ得た。
減圧乾燥処理時の到達圧力及び処理時間、並びにレジストパターンの断面形状及び剥離後の金属蒸着膜のパターン形状の評価結果を第1表に示す。
Examples 2 and 3
Substrates with metal wiring were obtained in the same manner as in Example 1 except that the ultimate pressure during drying under reduced pressure was changed.
Table 1 shows the evaluation results of the ultimate pressure and processing time during the vacuum drying treatment, the cross-sectional shape of the resist pattern, and the pattern shape of the metal vapor-deposited film after peeling.
比較例1
減圧乾燥を実施しなかったこと以外は、実施例1と同様の方法で金属配線付き基板を得た。
レジストパターンの断面形状及び剥離後の金属蒸着膜のパターン形状の評価結果を第1表に示す。
Comparative Example 1
A substrate with metal wiring was obtained in the same manner as in Example 1 except that the drying under reduced pressure was not performed.
Table 1 shows the evaluation results of the cross-sectional shape of the resist pattern and the pattern shape of the metal vapor-deposited film after peeling.
比較例2
減圧乾燥時の到達圧力を変えた以外は、実施例1と同様の方法で金属配線付き基板を得た。
減圧乾燥処理時の到達圧力及び処理時間、並びにレジストパターンの断面形状及び剥離後の金属蒸着膜のパターン形状の評価結果を第1表に示す。
第1表より、所定の減圧乾燥処理を行って感光層を形成した実施例1〜3では基板上のレジストパターンが逆テーパー状となり、良好な金属蒸着膜パターンが形成される一方、そのような減圧乾燥処理を行わなかった比較例1と2では順テーパー状のレジストパターンが形成され、金属蒸着膜パターンが不良となることが分かる。
Comparative Example 2
A substrate with metal wiring was obtained in the same manner as in Example 1 except that the ultimate pressure during drying under reduced pressure was changed.
Table 1 shows the evaluation results of the ultimate pressure and processing time during the vacuum drying treatment, the cross-sectional shape of the resist pattern, and the pattern shape of the metal vapor-deposited film after peeling.
From Table 1, in Examples 1 to 3 in which the photosensitive layer was formed by performing a predetermined reduced-pressure drying treatment, the resist pattern on the substrate was reverse-tapered, and a good metal vapor deposition film pattern was formed. It can be seen that in Comparative Examples 1 and 2 where the vacuum drying treatment was not performed, a forward tapered resist pattern was formed and the metal vapor deposition film pattern was defective.
本発明により、汎用の安価なポジ型フォトレジストにより簡単な操作で得られる逆テーパー状のレジストパターンを設けた基板を利用し、リフトオフ法により金属配線付き基板を安価に生産性よく製造する方法が提供される。 According to the present invention, there is provided a method for manufacturing a substrate with metal wiring at low cost and with high productivity by using a lift-off method using a substrate provided with a reverse tapered resist pattern obtained by a simple operation with a general-purpose inexpensive positive photoresist. Provided.
1 基板
2 ネガ型レジストパターン
3、3' 蒸着膜
1
Claims (1)
(b)前記塗膜を到達圧力5〜4,000Paの条件で減圧乾燥して感光層を形成する工程、
(c)前記感光層をパターン露光したのち、現像して逆テーパー状のレジストパターンを形成する工程、
(d)前記(c)工程により得られた逆テーパー状のレジストパターンを有する基板に対して金属を蒸着する工程、及び
(e)リフトオフ操作により、前記(d)工程で金属蒸着した基板から逆テーパー状のレジストパターンとその上の金属蒸着膜とを共に除去する工程
を有する、金属配線付き基板の製造方法。(A) A step of applying a positive photosensitive resin composition containing (A) an alkali-soluble resin, (B) a quinonediazide group-containing compound, and (C) a solvent on a substrate to form a coating film,
(B) forming a photosensitive layer by drying the coating film under reduced pressure under a condition of ultimate pressure of 5 to 4,000 Pa ;
(C) a step of pattern-exposing the photosensitive layer and then developing to form a reverse-tapered resist pattern;
(D) a step of vapor-depositing a metal on the substrate having an inversely tapered resist pattern obtained in the step (c), and (e) a reverse from the substrate on which the metal is vapor-deposited in the step (d) by a lift-off operation. A method for producing a substrate with metal wiring, comprising a step of removing both a tapered resist pattern and a metal vapor deposition film thereon.
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PCT/JP2006/320041 WO2007037553A1 (en) | 2005-09-30 | 2006-09-29 | Process for producing substrate with metal wiring |
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Also Published As
Publication number | Publication date |
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WO2007037553A1 (en) | 2007-04-05 |
TW200731027A (en) | 2007-08-16 |
CN101278239A (en) | 2008-10-01 |
WO2007037553A9 (en) | 2007-05-31 |
CN101278239B (en) | 2011-11-16 |
JPWO2007037553A1 (en) | 2009-04-16 |
KR20080057325A (en) | 2008-06-24 |
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