JP4971471B2 - 磁気レオロジー仕上げにより形成された均一な薄膜 - Google Patents
磁気レオロジー仕上げにより形成された均一な薄膜 Download PDFInfo
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- JP4971471B2 JP4971471B2 JP2010015358A JP2010015358A JP4971471B2 JP 4971471 B2 JP4971471 B2 JP 4971471B2 JP 2010015358 A JP2010015358 A JP 2010015358A JP 2010015358 A JP2010015358 A JP 2010015358A JP 4971471 B2 JP4971471 B2 JP 4971471B2
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- 239000010409 thin film Substances 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 48
- 238000012545 processing Methods 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000004556 laser interferometry Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002347 wear-protection layer Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 238000002424 x-ray crystallography Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B31/00—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor
- B24B31/10—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor involving other means for tumbling of work
- B24B31/112—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor involving other means for tumbling of work using magnetically consolidated grinding powder, moved relatively to the workpiece under the influence of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
Description
簡単に説明すれば、極めて均一な厚さを有し且つ、表面又は表面下亀裂が存在しない薄層を形成する改良された方法において、材料の加工層は所望の最終厚さよりも厚い厚さに形成される。該層は、独立的要素とし、又はキャリア基板における被覆として形成することができる。加工層の厚さの領域的(XY)決定は、偏光解析法、レーザ干渉法又はx線回折法のような既知の技術により行われる。現在の好ましい手段は、米国、マサチューセッツ州、ニュートンのADEテクノロジーズインク(ADETechnologies, Inc.)から入手可能なアキュマップセカンド(AcuMap II)装置である。加工層の自由表面から除去すべき厚さのマップを表わすデータは、磁気レオロジー仕上げ装置の制御システムに入力される。独立的な層要素又は被覆した基板要素が装置の加工物ホルダに取り付けられ且つ、機械に対し正確に割り出される。次に、MRF機械は、制御システムにより命令されたように材料を除去し、公称平均厚さにて極めて高度の厚さの均一性及び極めて高度の表面一体性を有する残量層を形成する。
図1を参照すると、本発明に従った方法にて使用するのに適した磁気レオロジー仕上げシステム10(例えば、米国、ニューヨーク州、ロチェスターのQEDテクノロジーから入手可能なQ22システム)は、基部12と、磁石組立体17を支持する第一のアーム15とを有している。組立体17は、電磁石のコア及び巻線13と、球状キャリアホイール20に適合可能である半径方向端部を有する平面状スラブであることが好ましく、また、従来の方法にてコアに接続されたそれぞれの左側磁石ヨーク部材14及び右側ヨーク部材16とを有している。基部12から伸びる第二のブラケット11は、軸受24内に軸支された軸22と、該基部から片持ち状に支持されたモータ駆動装置18とを支持している。駆動装置18は、駆動装置コントローラ(図示せず)により従来の仕方にて制御され、駆動装置の回転速度を所望の目的にて制御する。駆動装置18は、システムコントローラ19に更に接続され、システムの色々な構成要素の作用を調和させる。軸22は、駆動装置18から離れる方向に向けてフランジ30から伸びる球形面32を支持するキャリアホイールフランジ30に回転可能に結合されている。フランジ30及び面32は、共に全体としてボウル形状のキャリアホイール20を画成し、該キャリアホイールは、フランジ30に対向する側にて開放し、磁石組立体17を受け入れる。好ましくは、表面32は、1つの球の赤道部分であるものとする。
実験例:従来の200mmのケイ素ウェハを、絶縁ガラスの下塗りにて被覆し、その後に、200nm±20nmのガラス表面からの公称厚さを有するケイ素加工層を施した。ケイ素層の所望の仕上げ厚さは、100nmである。加工層厚さの特徴を領域的に決定し且つ、除去パターンを、QEDQ22システム内にプログラム化する。ウェハを、加工物ホルダ内に取り付け、また、計算した除去パターンに割り出し、除去パターンを実行し、公称厚さ100nm及び厚さの変化が±5nm以下である仕上がった残留ケイ素層が残るようにする。表面には応力誘発の亀裂は存在しない。
Claims (7)
- 所望の厚さ、高精度の厚さ均一性と亀裂が存在しない高精度の表面完全性とを有する材料の層要素(72)を、厚さの不均一性及び所望の厚さ(78)以上の厚さ(74)を有する加工層要素(70)から形成する方法において、
a)前記加工層要素(70)の実際の厚さ値(74)を示す第一の二次元的マップを形成するステップと、
b)前記所望の厚さ(78)の値を前記実際の厚さ(74)値の各々から減算することにより、前記加工層要素(70)から除去すべき材料の値(80)を示す第二の二次元的マップを形成するステップと、
c)除去すべき材料の前記値(80)のマップにて磁気レオロジー式仕上げシステムをプログラミングするステップと、
d)前記加工層要素(70)を前記磁気レオロジー式仕上げシステムに取り付けるステップと、
e)加工層要素(70)の位置を、前記システムの前記除去すべき材料の値のマップに対応して割り出すステップと、
f)前記値のマップに従って磁気レオロジー式仕上げにより前記加工要素層から材料を除去し、前記所望の厚さ(78)、高精度の厚さの均一性と亀裂が存在しない高精度の表面完全性とを有する均一層要素(72)が残るようにするステップとを備える、方法。 - 請求項1に記載の方法において、前記加工層要素が、
キャリア基板に対し予め被覆される、方法。 - 請求項2に記載の方法において、
前記キャリア基板が、ガラス、金属、セラミック、ケイ素及びサファイアの少なくとも1つを含む、方法。 - 請求項1に記載の方法において、
前記加工層要素が、セラミック、ガラス、金属、半導体、遷移金属酸化物、磁気抵抗性合金、アルミニウム酸化物、窒化物、炭化物、ヒ化ガリウム、タングステン、ケイ素及びサファイアから成る群から選ばれた材料にて形成される、方法。 - 請求項1に記載の方法において、
前記加工層要素が10mm以下の厚さを有する、方法。 - 請求項1に記載の方法において、
前記均一層要素(72)の厚さが50nm以下だけ変化する、方法。 - 請求項5に記載の方法において、
前記均一層要素(72)の厚さが10nm以下だけ変化する、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/213,631 US6746310B2 (en) | 2002-08-06 | 2002-08-06 | Uniform thin films produced by magnetorheological finishing |
US10/213,631 | 2002-08-06 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004526402A Division JP2005535133A (ja) | 2002-08-06 | 2003-08-04 | 磁気レオロジー仕上げにより形成された均一な薄膜 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010115779A JP2010115779A (ja) | 2010-05-27 |
JP4971471B2 true JP4971471B2 (ja) | 2012-07-11 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004526402A Withdrawn JP2005535133A (ja) | 2002-08-06 | 2003-08-04 | 磁気レオロジー仕上げにより形成された均一な薄膜 |
JP2010015358A Expired - Lifetime JP4971471B2 (ja) | 2002-08-06 | 2010-01-27 | 磁気レオロジー仕上げにより形成された均一な薄膜 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004526402A Withdrawn JP2005535133A (ja) | 2002-08-06 | 2003-08-04 | 磁気レオロジー仕上げにより形成された均一な薄膜 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6746310B2 (ja) |
EP (1) | EP1526948B1 (ja) |
JP (2) | JP2005535133A (ja) |
AU (1) | AU2003273227A1 (ja) |
WO (1) | WO2004013656A2 (ja) |
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WO2006053000A2 (en) | 2004-11-05 | 2006-05-18 | Sparq, Inc. | Athleticism rating and performance measuring systems |
US7959490B2 (en) | 2005-10-31 | 2011-06-14 | Depuy Products, Inc. | Orthopaedic component manufacturing method and equipment |
US7521980B2 (en) * | 2006-08-25 | 2009-04-21 | Texas Instruments Incorporated | Process and temperature-independent voltage controlled attenuator and method |
CN100436052C (zh) * | 2006-09-04 | 2008-11-26 | 厦门大学 | 参数可调式磁流变抛光轮 |
US7892071B2 (en) * | 2006-09-29 | 2011-02-22 | Depuy Products, Inc. | Orthopaedic component manufacturing method and equipment |
US7557566B2 (en) * | 2007-03-02 | 2009-07-07 | Qed Technologies International, Inc. | Method and apparatus for measurement of magnetic permeability of a material |
US9343273B2 (en) * | 2008-09-25 | 2016-05-17 | Seagate Technology Llc | Substrate holders for uniform reactive sputtering |
US8271120B2 (en) * | 2009-08-03 | 2012-09-18 | Lawrence Livermore National Security, Llc | Method and system for processing optical elements using magnetorheological finishing |
US8780440B2 (en) * | 2009-08-03 | 2014-07-15 | Lawrence Livermore National Security, Llc | Dispersion compensation in chirped pulse amplification systems |
WO2012067587A1 (en) * | 2010-11-15 | 2012-05-24 | Agency For Science, Technology And Research (A*Star) | Apparatus and method for polishing an edge of an article using magnetorheological (mr) fluid |
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CN106826402B (zh) * | 2016-07-25 | 2018-04-20 | 中国科学院长春光学精密机械与物理研究所 | 一种磁流变抛光轮对非球面光学元件进行对准加工方法 |
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CN110226137A (zh) | 2016-11-25 | 2019-09-10 | 格罗弗治公司 | 借助图像跟踪进行制造 |
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CN107234494B (zh) * | 2017-06-30 | 2024-01-16 | 浙江师范大学 | 一种磁流变浮动抛光装置与方法 |
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2002
- 2002-08-06 US US10/213,631 patent/US6746310B2/en not_active Expired - Lifetime
-
2003
- 2003-08-04 EP EP03755733A patent/EP1526948B1/en not_active Expired - Lifetime
- 2003-08-04 JP JP2004526402A patent/JP2005535133A/ja not_active Withdrawn
- 2003-08-04 WO PCT/US2003/024347 patent/WO2004013656A2/en active Application Filing
- 2003-08-04 AU AU2003273227A patent/AU2003273227A1/en not_active Abandoned
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2010
- 2010-01-27 JP JP2010015358A patent/JP4971471B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2004013656A3 (en) | 2004-07-08 |
US20040029493A1 (en) | 2004-02-12 |
US6746310B2 (en) | 2004-06-08 |
AU2003273227A8 (en) | 2004-02-23 |
JP2005535133A (ja) | 2005-11-17 |
WO2004013656A2 (en) | 2004-02-12 |
EP1526948A4 (en) | 2009-03-25 |
EP1526948B1 (en) | 2012-06-27 |
AU2003273227A1 (en) | 2004-02-23 |
EP1526948A2 (en) | 2005-05-04 |
JP2010115779A (ja) | 2010-05-27 |
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