JP4969141B2 - 記憶素子、半導体装置、及び記憶素子の作製方法 - Google Patents

記憶素子、半導体装置、及び記憶素子の作製方法 Download PDF

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Publication number
JP4969141B2
JP4969141B2 JP2006122101A JP2006122101A JP4969141B2 JP 4969141 B2 JP4969141 B2 JP 4969141B2 JP 2006122101 A JP2006122101 A JP 2006122101A JP 2006122101 A JP2006122101 A JP 2006122101A JP 4969141 B2 JP4969141 B2 JP 4969141B2
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conductive layer
layer
organic compound
insulator
conductive
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JP2006122101A
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Japanese (ja)
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JP2006332629A5 (https=
JP2006332629A (ja
Inventor
幹央 湯川
信晴 大澤
良信 浅見
郁子 川俣
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
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JP2006122101A 2005-04-27 2006-04-26 記憶素子、半導体装置、及び記憶素子の作製方法 Expired - Fee Related JP4969141B2 (ja)

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Application Number Priority Date Filing Date Title
JP2006122101A JP4969141B2 (ja) 2005-04-27 2006-04-26 記憶素子、半導体装置、及び記憶素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005130632 2005-04-27
JP2005130632 2005-04-27
JP2006122101A JP4969141B2 (ja) 2005-04-27 2006-04-26 記憶素子、半導体装置、及び記憶素子の作製方法

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JP2006332629A JP2006332629A (ja) 2006-12-07
JP2006332629A5 JP2006332629A5 (https=) 2009-03-26
JP4969141B2 true JP4969141B2 (ja) 2012-07-04

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8582348B2 (en) * 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8634228B2 (en) * 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
JP5929132B2 (ja) * 2011-11-30 2016-06-01 株式会社リコー 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259478A (ja) * 1986-04-14 1987-11-11 Nippon Telegr & Teleph Corp <Ntt> トンネル素子
AU2001265068A1 (en) * 2000-10-31 2002-05-15 The Regents Of The University Of California Organic bistable device and organic memory cells
US7274035B2 (en) * 2003-09-03 2007-09-25 The Regents Of The University Of California Memory devices based on electric field programmable films

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