JP4963694B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4963694B2
JP4963694B2 JP2008250994A JP2008250994A JP4963694B2 JP 4963694 B2 JP4963694 B2 JP 4963694B2 JP 2008250994 A JP2008250994 A JP 2008250994A JP 2008250994 A JP2008250994 A JP 2008250994A JP 4963694 B2 JP4963694 B2 JP 4963694B2
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Japan
Prior art keywords
gas
flow rate
antenna
plasma processing
processing apparatus
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JP2008250994A
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Japanese (ja)
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JP2008311686A (ja
JP2008311686A5 (enExample
Inventor
浩之 小林
賢治 前田
賢悦 横川
勝 伊澤
任光 金清
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2008250994A 2008-09-29 2008-09-29 プラズマ処理装置 Expired - Lifetime JP4963694B2 (ja)

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JP2008250994A JP4963694B2 (ja) 2008-09-29 2008-09-29 プラズマ処理装置

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JP2008250994A JP4963694B2 (ja) 2008-09-29 2008-09-29 プラズマ処理装置

Related Parent Applications (1)

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JP2004217118A Division JP4550507B2 (ja) 2004-07-26 2004-07-26 プラズマ処理装置

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JP2008311686A JP2008311686A (ja) 2008-12-25
JP2008311686A5 JP2008311686A5 (enExample) 2011-02-17
JP4963694B2 true JP4963694B2 (ja) 2012-06-27

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JP2008250994A Expired - Lifetime JP4963694B2 (ja) 2008-09-29 2008-09-29 プラズマ処理装置

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101519024B1 (ko) * 2009-01-15 2015-05-12 삼성전자 주식회사 플라즈마 식각 장치의 가스공급장치
WO2020086173A2 (en) * 2018-09-26 2020-04-30 Applied Materials, Inc. Heat conductive spacer for plasma processing chamber

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61100935A (ja) * 1984-10-23 1986-05-19 Fujitsu Ltd ドライエツチング装置
US6294026B1 (en) * 1996-11-26 2001-09-25 Siemens Aktiengesellschaft Distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops
JPH1116888A (ja) * 1997-06-24 1999-01-22 Hitachi Ltd エッチング装置及びその運転方法
JP2000156370A (ja) * 1998-09-16 2000-06-06 Tokyo Electron Ltd プラズマ処理方法
JP2000208483A (ja) * 1999-01-08 2000-07-28 Mitsubishi Electric Corp ウェハ処理装置及びウェハ処理方法
JP4388627B2 (ja) * 1999-07-05 2009-12-24 東京エレクトロン株式会社 処理装置
JP2002064084A (ja) * 2000-08-17 2002-02-28 Sumitomo Metal Ind Ltd プラズマ処理用ガス導入装置およびプラズマ処理方法
JP3764639B2 (ja) * 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
JP3881307B2 (ja) * 2002-12-19 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置

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JP2008311686A (ja) 2008-12-25

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