JP4961030B2 - 二重正帰還電圧制御発振器 - Google Patents
二重正帰還電圧制御発振器 Download PDFInfo
- Publication number
- JP4961030B2 JP4961030B2 JP2010169101A JP2010169101A JP4961030B2 JP 4961030 B2 JP4961030 B2 JP 4961030B2 JP 2010169101 A JP2010169101 A JP 2010169101A JP 2010169101 A JP2010169101 A JP 2010169101A JP 4961030 B2 JP4961030 B2 JP 4961030B2
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- Prior art keywords
- transistor
- coupled
- source
- controlled oscillator
- positive feedback
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1218—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the generator being of the balanced type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1221—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising multiple amplification stages connected in cascade
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0002—Types of oscillators
- H03B2200/0008—Colpitts oscillator
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
20、21 コルピッツ回路
30 NMOS交差結合ペア回路
40 電流源
C1、C2、Cvar1、Cvar2 コンデンサ
Lc コイル
M1、M2、M3、M4、M5 トランジスタ
N1、N2、N3、N4、N5 ポイント
Claims (6)
- 発振回路と、交差結合ペア回路とを備え
上記発振回路は、第1トランジスタと、第2トランジスタと、コイルと、複数の各コンデンサとを含み、
上記第2トランジスタのゲートと上記第1トランジスタのゲートとは対向し、上記第1トランジスタおよび上記第2トランジスタの各ゲートは、それぞれ、上記コイルにおける2つの各ポイントに結合され、上記コイルおよび上記各コンデンサは、LCタンクとして形成され、
上記交差結合ペア回路は、第3トランジスタおよび第4トランジスタを含み、
上記第3トランジスタのゲートおよび上記第4トランジスタのゲートが上記コイルにおける上記2つの各ポイントと結合され、上記第3トランジスタのゲートは、上記第2トランジスタのゲートに結合され、上記第4トランジスタのゲートは、上記第1トランジスタのゲートに結合され、上記第3トランジスタのドレインは、上記第1トランジスタのソースに結合され、上記第4トランジスタのドレインは、上記第2トランジスタのソースに結合されている、二重正帰還電圧制御発振器。 - 供給電圧を提供する電圧源をさらに備え、
上記第1トランジスタのドレイン、上記第2トランジスタのドレインおよび上記コイルが、上記電圧源に結合されている、請求項1に記載の二重正帰還電圧制御発振器。 - 上記LCタンクの各コンデンサは、
上記発振回路の第1出力と、上記第1トランジスタのソースとの間に電気的に接続されている第1コンデンサと、
上記発振回路の第2出力と、上記第2トランジスタのソースとの間に電気的に接続される第2コンデンサと、
上記第3トランジスタのドレインとグランドとの間に電気的に接続されている第1可変コンデンサと、
上記第4トランジスタのドレインと上記グランドとの間に電気的に接続されている第2可変コンデンサとを含む、請求項1に記載の二重正帰還電圧制御発振器。 - 上記第3トランジスタのソースおよび上記第4トランジスタのソースが接地されている、請求項1に記載の二重正帰還電圧制御発振器。
- 上記発振回路および上記交差結合ペア回路にバイアス電流を提供する電流源としての第5トランジスタをさらに備え、
上記第5トランジスタのドレインは、上記第3トランジスタのソースおよび上記第4トランジスタのソースに結合されている、請求項1に記載の二重正帰還電圧制御発振器。 - 上記第1トランジスタ、上記第2トランジスタ、上記第3トランジスタおよび上記第4トランジスタは、n型電界効果トランジスタである、請求項1に記載の二重正帰還電圧制御発振器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW099109575 | 2010-05-04 | ||
TW099109575A TWI398094B (zh) | 2010-05-04 | 2010-05-04 | 雙正回授壓控震盪器 |
Publications (2)
Publication Number | Publication Date |
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JP2011239359A JP2011239359A (ja) | 2011-11-24 |
JP4961030B2 true JP4961030B2 (ja) | 2012-06-27 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010169101A Active JP4961030B2 (ja) | 2010-05-04 | 2010-07-28 | 二重正帰還電圧制御発振器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8264290B2 (ja) |
JP (1) | JP4961030B2 (ja) |
TW (1) | TWI398094B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9236466B1 (en) * | 2011-10-07 | 2016-01-12 | Mie Fujitsu Semiconductor Limited | Analog circuits having improved insulated gate transistors, and methods therefor |
US10008980B2 (en) | 2014-10-03 | 2018-06-26 | Short Circuit Technologies Llc | Wideband digitally controlled injection-locked oscillator |
DE102017121441A1 (de) * | 2017-09-15 | 2019-03-21 | Dr. Ing. H.C. F. Porsche Aktiengesellschaft | Schutzschaltung für eine Ladevorrichtung |
EP3487069B1 (en) * | 2017-11-17 | 2020-01-01 | Axis AB | Crystal oscillator circuit |
CN117879496A (zh) * | 2018-02-01 | 2024-04-12 | 江苏星宇芯联电子科技有限公司 | 一种可变结构压控振荡器及其控制方法 |
EP3605838B1 (en) * | 2018-07-31 | 2021-01-06 | Stichting IMEC Nederland | Improvements in or relating to colpitts oscillators |
EP3605839B1 (en) | 2018-07-31 | 2021-01-13 | Stichting IMEC Nederland | Improvements in or relating to colpitts oscillators |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US6046647A (en) * | 1998-12-08 | 2000-04-04 | Lucent Technologies Inc. | Voltage-controlled oscillator |
US20110018646A1 (en) * | 2009-07-27 | 2011-01-27 | Electronics And Telecommunications Research Institute | Lc voltage-controlled oscillator |
JP2011139228A (ja) * | 2009-12-28 | 2011-07-14 | Renesas Electronics Corp | 発振器複合回路と半導体装置並びに電流再利用方法 |
US8134418B2 (en) * | 2010-04-13 | 2012-03-13 | Xilinx, Inc. | Varactor circuit and voltage-controlled oscillation |
-
2010
- 2010-05-04 TW TW099109575A patent/TWI398094B/zh not_active IP Right Cessation
- 2010-07-28 JP JP2010169101A patent/JP4961030B2/ja active Active
- 2010-08-06 US US12/805,572 patent/US8264290B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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TWI398094B (zh) | 2013-06-01 |
US8264290B2 (en) | 2012-09-11 |
TW201141047A (en) | 2011-11-16 |
US20110273239A1 (en) | 2011-11-10 |
JP2011239359A (ja) | 2011-11-24 |
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