JP4956787B2

JP4956787B2 - Cooling system

Info

Publication number: JP4956787B2
Application number: JP2007086681A
Authority: JP
Inventors: 誠岩島; 善則村上
Original assignee: Nissan Motor Co Ltd
Current assignee: Nissan Motor Co Ltd
Priority date: 2007-03-29
Filing date: 2007-03-29
Publication date: 2012-06-20
Anticipated expiration: 2027-03-29
Also published as: JP2008244398A

Description

本発明は、半導体素子等の発熱体を冷却する冷却装置に関する。 The present invention relates to a cooling device for cooling a heating element such as a semiconductor element.

従来、半導体素子の高出力化、高温度化に対応するために、フィン型の冷却装置に代わり、発熱体を冷却する流路内にポーラス部材（多孔質体）を配置し、フィンと比べて冷却効率を向上させる冷却装置が知られている（特許文献１参照）。
特開２００１−３５８２７０号公報 Conventionally, in order to cope with higher output and higher temperature of a semiconductor element, a porous member (porous body) is disposed in a flow path for cooling a heating element instead of a fin-type cooling device, compared with fins. A cooling device that improves cooling efficiency is known (see Patent Document 1).
JP 2001-358270 A

しかしながら、上記冷却装置では、多孔質体の熱伝達率が高いために、各多孔質体の出入口間での冷媒の温度差が大きくなり、上記冷却装置の冷媒入口側に配置される多孔質体へ供給される冷媒の温度と、上記冷却装置の冷媒出口側に配置される多孔質体へ供給される冷媒の温度との差が大きくなるといった問題があった。 However, in the cooling device, since the heat transfer coefficient of the porous body is high, the temperature difference of the refrigerant between the entrances and exits of each porous body increases, and the porous body disposed on the coolant inlet side of the cooling device. There is a problem that the difference between the temperature of the refrigerant supplied to the refrigerant and the temperature of the refrigerant supplied to the porous body arranged on the refrigerant outlet side of the cooling device becomes large.

本発明は、こうした問題に鑑みてなされたものであり、各高熱伝達率材へ供給される冷媒間の温度差を抑制できる冷却装置を提供することを目的とする。 This invention is made | formed in view of such a problem, and it aims at providing the cooling device which can suppress the temperature difference between the refrigerant | coolants supplied to each high heat transfer coefficient material.

上記目的達成のため、本発明に係る冷却装置では、発熱体から発生する熱を冷媒に伝達する高熱伝達率材の直下に配置された仕切り板に形成された孔を介して、下部流路から高熱伝達率材に、冷媒が供給され、前記高熱伝達率材は、多孔質体であることを特徴としている。 For the purposes achieved, in the cooling device according to the present invention, through the heat generated from a heating element formed in the partition plate arranged directly under the high heat transfer rate material you transfer to the coolant hole, lower flow a high heat transfer coefficient material from the road, the coolant is supplied, the high heat transfer coefficient material is characterized porous der Rukoto.

本発明により、複数の高熱伝達率材の直下に配置された仕切り板に形成された孔を介して、下部流路から高熱伝達率材に、冷媒を供給しているので、各高熱伝達率材へ供給される冷媒間の温度差を抑制することができる。これから、各高熱伝達率材へ供給される冷媒の温度をより均一化できる。 According to the present invention, since the refrigerant is supplied from the lower flow path to the high heat transfer coefficient material through the holes formed in the partition plates arranged immediately below the plurality of high heat transfer coefficient materials, each high heat transfer coefficient material The temperature difference between the refrigerants supplied to can be suppressed. From this, the temperature of the refrigerant supplied to each high heat transfer coefficient material can be made more uniform.

以下に、本発明の第１乃至第６の実施形態に係る冷却装置について、図１乃至図７を参照して説明する。 Hereinafter, a cooling device according to first to sixth embodiments of the present invention will be described with reference to FIGS. 1 to 7.

（第１の実施形態）
まず、第１の実施形態に係る冷却装置について図１を参照して説明する。図１は本発明の第１の実施形態に係る冷却装置の構造を示す図、図２は図１に示す冷却装置のＡＡ断面図である。なお、図１では冷却板１、絶縁板２および半導体素子３を透視した状態を示している。図１および図２に示すように、第１の実施形態に係る冷却装置は、発熱体である半導体素子３から発生する熱を冷媒に伝達する複数の高熱伝達率材である６個の多孔質体５と、冷媒が流れる流路１０を分割し、上部流路１０ｂと下部流路１０ａに仕切る仕切り板６と、仕切り板６に形成された６個の孔７とを備えている。また、全多孔質体５は仕切り板６上に配置され、多孔質体５における仕切り板６と対向する端部は冷却板１と接合し、冷却板１上に６個の絶縁板２を介して、６個の半導体素子３が配置されている。また、各半導体素子３の直下に、各絶縁板２、各多孔質体５、各孔７が配置されている。また、流路１０の一方には、下部流路１０ａに冷媒を流入するための冷媒入口８が形成され、流路１０の他方には、上部流路１０ｂから冷媒を流出させるための冷媒出口４が形成されている。ここで、冷却板１は主に銅やアルミニウム等の熱伝達率の高い金属からなり、冷却板１上に配置された絶縁板２はセラミック基板等からなる。また、半導体素子３はＩＧＢＴやダイオード等の大電流を流す素子である。一方、多孔質体５は図１に示したように、円柱状に形成されている。更に、多孔質体５には、冷媒が多孔質体５内を通過できるように、他の気孔と一部が接続される（オープンセル型の）球状の気孔が多数形成されている。また、孔７は多孔質体５よりも小さく形成されている。なお、６個の半導体素子３は全く同じ仕様である。同様に、６個の絶縁板２、６個の多孔質体５、６個の孔７は各々全く同じ仕様である。よって、６個の半導体素子３の大きさおよび発熱量の大きさは全く同じであり、６個の多孔質体５の気孔率（単位面積当たりの気孔数および気孔の直径）は全く同じである。 (First embodiment)
First, the cooling device according to the first embodiment will be described with reference to FIG. FIG. 1 is a diagram showing a structure of a cooling device according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line AA of the cooling device shown in FIG. 1 shows a state in which the cooling plate 1, the insulating plate 2, and the semiconductor element 3 are seen through. As shown in FIGS. 1 and 2, the cooling device according to the first embodiment includes six porous materials that are a plurality of high heat transfer coefficient materials that transfer heat generated from the semiconductor element 3 that is a heating element to the refrigerant. A body 5, a partition plate 6 that divides a flow path 10 through which a refrigerant flows and divides the flow path 10 into an upper flow path 10 b and a lower flow path 10 a, and six holes 7 formed in the partition plate 6 are provided. Further, the total porous body 5 is disposed on the partition plate 6, the end of the porous body 5 facing the partition plate 6 is joined to the cooling plate 1, and six insulating plates 2 are interposed on the cooling plate 1. Thus, six semiconductor elements 3 are arranged. Further, immediately below each semiconductor element 3, each insulating plate 2, each porous body 5, and each hole 7 are arranged. In addition, a refrigerant inlet 8 for allowing the refrigerant to flow into the lower flow path 10a is formed in one of the flow paths 10, and a refrigerant outlet 4 for allowing the refrigerant to flow out of the upper flow path 10b is formed in the other of the flow paths 10. Is formed. Here, the cooling plate 1 is mainly made of a metal having a high heat transfer coefficient such as copper or aluminum, and the insulating plate 2 disposed on the cooling plate 1 is made of a ceramic substrate or the like. Further, the semiconductor element 3 is an element that allows a large current to flow, such as an IGBT or a diode. On the other hand, the porous body 5 is formed in a columnar shape as shown in FIG. Further, the porous body 5 is formed with many spherical pores (open cell type) that are partially connected to other pores so that the refrigerant can pass through the porous body 5. The holes 7 are formed smaller than the porous body 5. The six semiconductor elements 3 have exactly the same specifications. Similarly, the six insulating plates 2, the six porous bodies 5, and the six holes 7 have exactly the same specifications. Therefore, the size of the six semiconductor elements 3 and the magnitude of the heat generation amount are exactly the same, and the porosity (the number of pores per unit area and the diameter of the pores) of the six porous bodies 5 is exactly the same. .

次に、第１の実施形態に係る冷却装置における冷媒経路について説明する。第１の実施形態では、冷媒として冷却水を用いている。冷媒は、冷媒入口８から流入した後、図１および図２中の矢印の向きに流れ、冷媒出口４から流出される。すなわち、冷却装置外部から供給された冷媒は、冷媒入口８から下部流路１０ａに流入し、仕切り板６の孔７を介して、下部流路１０ａから多孔質体５に下から上に垂直に供給される。多孔質体５に供給された冷媒は、多孔質体５における孔側端部から孔７と対向する端部に向けて、多孔質体５の気孔内を通過する。その際、冷媒は多孔質体５を冷却する。更に、気孔内を通過した冷媒は、多孔質体５における孔７と対向する端部で冷却板１に当たる。冷却板１における多孔質体５との接合面に当たった後、多孔質体５の内周部である中心部から外周部に向かって当該接合面に沿って押し流され、多孔質体５から上部流路１０ｂに流入する。その際、冷媒は冷却板１を直接冷却する。その後、上部流路１０ｂに流入した冷媒は、冷媒出口４方向に流れ、最終的に冷媒出口４から冷却装置外部に流出する。上記一連の冷媒経路により、絶縁板２、冷却板１および多孔質体５に伝達された半導体素子３で発生した熱は、冷媒入口８−下部流路１０ａ−仕切り板６の孔７−多孔質体５の気孔−冷却板１と多孔質体５との接合面-上部流路１０ｂ−冷媒出口４を流れる冷媒に伝達される。結果として、半導体素子３が放熱、冷却される。 Next, the refrigerant path in the cooling device according to the first embodiment will be described. In the first embodiment, cooling water is used as the refrigerant. The refrigerant flows from the refrigerant inlet 8, then flows in the direction of the arrow in FIGS. 1 and 2, and flows out from the refrigerant outlet 4. That is, the refrigerant supplied from the outside of the cooling device flows into the lower flow path 10 a from the refrigerant inlet 8, and vertically passes from the lower flow path 10 a to the porous body 5 through the holes 7 of the partition plate 6. Supplied. The refrigerant supplied to the porous body 5 passes through the pores of the porous body 5 from the hole-side end of the porous body 5 toward the end facing the hole 7. At that time, the refrigerant cools the porous body 5. Furthermore, the refrigerant that has passed through the pores strikes the cooling plate 1 at the end of the porous body 5 facing the holes 7. After hitting the joint surface of the cooling plate 1 with the porous body 5, it is swept along the joint surface from the central portion, which is the inner peripheral portion of the porous body 5, toward the outer peripheral portion. It flows into the flow path 10b. At that time, the refrigerant directly cools the cooling plate 1. Thereafter, the refrigerant flowing into the upper flow path 10b flows in the direction of the refrigerant outlet 4, and finally flows out from the refrigerant outlet 4 to the outside of the cooling device. The heat generated in the semiconductor element 3 transmitted to the insulating plate 2, the cooling plate 1, and the porous body 5 by the series of refrigerant paths is the refrigerant inlet 8 -the lower flow path 10 a -the hole 7 of the partition plate 6 -the porous body. The pores of the body 5 -the joint surface between the cooling plate 1 and the porous body 5 -the upper flow path 10b -is transferred to the refrigerant flowing through the refrigerant outlet 4. As a result, the semiconductor element 3 is radiated and cooled.

以上より、第１の実施形態に係る冷却装置では、流路１０を下部流路１０ａと上部流路１０ｂに仕切る仕切り板６上に６個の多孔質体５が配置され、６個の孔７を介して、下部流路１０ａから６個の多孔質体５に下から上に垂直に同時に冷媒が供給されるので、各多孔質体５へ供給される冷媒間の温度差を抑制することができる。これから、各多孔質体５へ供給される冷媒の温度をより均一化できる。また、第１の実施形態に係る冷却装置では、上記のように、６個の半導体素子３の大きさおよび発熱量の大きさは全く同じであり、６個の多孔質体５の気孔率（単位面積当たりの気孔数および気孔の直径）は全く同じであることから、各多孔質体５へ供給される冷媒間の温度差を抑制することで、半導体素子３間の温度差を抑制できる。よって、半導体素子３間の電気的特性（オン抵抗やスイッチング損失等）の均一性を確保することができる。 As described above, in the cooling device according to the first embodiment, the six porous bodies 5 are arranged on the partition plate 6 that partitions the flow path 10 into the lower flow path 10 a and the upper flow path 10 b, and the six holes 7. Since the refrigerant is simultaneously supplied vertically from the bottom to the six porous bodies 5 through the lower flow path 10a, the temperature difference between the refrigerants supplied to the porous bodies 5 can be suppressed. it can. From this, the temperature of the refrigerant supplied to each porous body 5 can be made more uniform. In the cooling device according to the first embodiment, as described above, the size of the six semiconductor elements 3 and the size of the heat generation amount are exactly the same, and the porosity ( Since the number of pores per unit area and the diameter of the pores) are exactly the same, the temperature difference between the semiconductor elements 3 can be suppressed by suppressing the temperature difference between the refrigerants supplied to each porous body 5. Therefore, it is possible to ensure uniformity of electrical characteristics (on resistance, switching loss, etc.) between the semiconductor elements 3.

また、第１の実施形態に係る冷却装置では、仕切り板６上に配置された６個の多孔質体５に下部流路１０ａから垂直に同時に冷媒が供給されるので、冷媒経路に対して、６個の多孔質体５を並列に配置できる。これから、従来の冷却装置、すなわち、冷媒経路に対して複数の多孔質体を直列に配置した冷却装置と比較して、冷媒入口８から冷媒出口４までの圧力損失を低減することができる。更に、第１の実施形態に係る冷却装置では、多孔質体５に供給された冷媒は、多孔質体５における孔７と対向する端部と接合する冷却板１に当たった後、多孔質体５の中心部から外周部に向かって、冷却板１における多孔質体５との接合面に沿って押し流されるので、半導体素子３全体を均一に冷却することができる。 In the cooling device according to the first embodiment, since the refrigerant is simultaneously supplied vertically from the lower flow path 10a to the six porous bodies 5 arranged on the partition plate 6, Six porous bodies 5 can be arranged in parallel. From this, the pressure loss from the refrigerant inlet 8 to the refrigerant outlet 4 can be reduced as compared with a conventional cooling apparatus, that is, a cooling apparatus in which a plurality of porous bodies are arranged in series with respect to the refrigerant path. Furthermore, in the cooling device according to the first embodiment, the refrigerant supplied to the porous body 5 hits the cooling plate 1 that joins the end of the porous body 5 facing the holes 7, and then the porous body 5. 5, the entire semiconductor element 3 can be cooled uniformly because it is forced to flow along the joint surface of the cooling plate 1 with the porous body 5 from the central portion to the outer peripheral portion.

また、第１の実施形態に係る冷却装置では、冷媒入口８から仕切り板６の孔７までの圧力損失および上部流路１０ｂから冷媒出口４までの圧力損失は、多孔質体５の圧力損失に対し無視できる程小さくなるため、各多孔質体５に、同じ流量および同じ流速の冷媒を供給することができる。更に、各多孔質体５から上部流路１０ｂに流入した冷媒は、他の多孔質体５に影響する（供給される）ことなしに、冷媒出口４から流出できる。 In the cooling device according to the first embodiment, the pressure loss from the refrigerant inlet 8 to the hole 7 of the partition plate 6 and the pressure loss from the upper flow path 10 b to the refrigerant outlet 4 are the pressure loss of the porous body 5. On the other hand, since it becomes negligibly small, it is possible to supply each porous body 5 with the same flow rate and the same flow rate of the refrigerant. Furthermore, the refrigerant that has flowed into the upper flow path 10 b from each porous body 5 can flow out from the refrigerant outlet 4 without affecting (supplied) the other porous bodies 5.

また、第１の実施形態に係る冷却装置では、仕切り板６の孔７を多孔質体５よりも小さくしたため、冷媒入口８から下部流路１０ａに流入した冷媒と、上部流路１０ｂから冷媒出口４に流出する冷媒が混ざることがなく、各多孔質体５に供給する冷媒を同一温度にできる。更に、冷媒を効率良く、冷却板１における多孔質体５との接合面に当てることができる。よって、冷却性能を向上することができる。 In the cooling device according to the first embodiment, since the holes 7 of the partition plate 6 are made smaller than the porous body 5, the refrigerant that has flowed into the lower flow path 10a from the refrigerant inlet 8 and the refrigerant outlet from the upper flow path 10b. The refrigerant flowing out to 4 is not mixed, and the refrigerant supplied to each porous body 5 can be at the same temperature. Furthermore, the coolant can be efficiently applied to the joint surface of the cooling plate 1 with the porous body 5. Therefore, the cooling performance can be improved.

（第２の実施形態）
次に、第２の実施形態に係る冷却装置について、第１の実施形態に係る冷却装置と異なる点を中心に図３を参照して説明する。また、第２の実施形態に係る冷却装置について、第１の実施形態に係る冷却装置と同様の構造には同じ番号を付し、説明を省略する。図３は、本発明の第２の実施形態に係る冷却装置の多孔質体周辺部を示す断面図である。図３は、図２の多孔質体周辺部Ｃ相当の図を示している。第２の実施形態に係る冷却装置は、第１の実施形態と異なり、多孔質体５の代わりに、多孔質体１１を用いている。そして、多孔質体１１が多孔質体５と異なる点は、仕切り板側端部の面積よりも仕切り板６と対向する端部の面積が小さく形成されていることだけである。これにより、第１の実施形態と同様の効果を取得することができる。なお、孔７は多孔質体１１よりも小さく形成されている。更に、多孔質体１１を用いることで、多孔質体１１の中心部の圧力損失に対し、多孔質体１１の外周部の圧力損失が大きく設定されるため、冷媒を効率良く、冷却板１における多孔質体１１との接合面に当てることができる。よって、冷却性能を向上することができる。 (Second Embodiment)
Next, the cooling device according to the second embodiment will be described with reference to FIG. 3 with a focus on differences from the cooling device according to the first embodiment. Moreover, about the cooling device which concerns on 2nd Embodiment, the same number is attached | subjected to the structure similar to the cooling device which concerns on 1st Embodiment, and description is abbreviate | omitted. FIG. 3 is a cross-sectional view showing the periphery of the porous body of the cooling device according to the second embodiment of the present invention. FIG. 3 shows a view corresponding to the porous body peripheral portion C in FIG. Unlike the first embodiment, the cooling device according to the second embodiment uses a porous body 11 instead of the porous body 5. The only difference between the porous body 11 and the porous body 5 is that the area of the end facing the partition plate 6 is smaller than the area of the end on the partition plate side. Thereby, the effect similar to 1st Embodiment is acquirable. The holes 7 are formed smaller than the porous body 11. Furthermore, since the pressure loss at the outer peripheral portion of the porous body 11 is set larger than the pressure loss at the central portion of the porous body 11 by using the porous body 11, the refrigerant can be efficiently used in the cooling plate 1. The contact surface with the porous body 11 can be applied. Therefore, the cooling performance can be improved.

（第３の実施形態）
次に、第３の実施形態に係る冷却装置について、第１の実施形態に係る冷却装置と異なる点を中心に図４を参照して説明する。また、第３の実施形態に係る冷却装置について、第１の実施形態に係る冷却装置と同様の構造には同じ番号を付し、説明を省略する。図４は、本発明の第３の実施形態に係る冷却装置の多孔質体周辺部を示す平面図である。図４は、図１の多孔質体周辺部Ｂ相当の図を示している。第３の実施形態に係る冷却装置は、第１の実施形態と異なり、多孔質体５の代わりに、多孔質体１２を用いている。そして、多孔質体１２が多孔質体５と異なる点は、上部流路１０ｂの冷媒出口４と反対方向に部分的に突出した卵型の柱に形成されていることだけである。これにより、第１の実施形態と同様の効果を取得することができる。なお、孔７は多孔質体１２よりも小さく形成されている。更に、多孔質体１２を用いることで、多孔質体１２の孔側端部から冷媒出口４側の上部流路１０ｂまでの圧力損失に対し、多孔質体１２の孔側端部から冷媒出口４の反対側の上部流路１０ｂまでの圧力損失が大きく設定されるため、冷媒を効率良く冷媒出口４側に排出することができ、冷媒の流れをよりスムーズにできる。 (Third embodiment)
Next, a cooling device according to a third embodiment will be described with reference to FIG. 4 with a focus on differences from the cooling device according to the first embodiment. Moreover, about the cooling device which concerns on 3rd Embodiment, the same number is attached | subjected to the structure similar to the cooling device which concerns on 1st Embodiment, and description is abbreviate | omitted. FIG. 4 is a plan view showing the porous body peripheral portion of the cooling device according to the third embodiment of the present invention. FIG. 4 shows a view corresponding to the porous body peripheral portion B of FIG. Unlike the first embodiment, the cooling device according to the third embodiment uses a porous body 12 instead of the porous body 5. The only difference between the porous body 12 and the porous body 5 is that the porous body 12 is formed in an egg-shaped column partially protruding in the direction opposite to the refrigerant outlet 4 of the upper flow path 10b. Thereby, the effect similar to 1st Embodiment is acquirable. The holes 7 are formed smaller than the porous body 12. Further, by using the porous body 12, the refrigerant outlet 4 from the hole side end of the porous body 12 against the pressure loss from the hole side end of the porous body 12 to the upper flow path 10 b on the refrigerant outlet 4 side. Since the pressure loss up to the upper flow path 10b on the opposite side is set large, the refrigerant can be efficiently discharged to the refrigerant outlet 4 side, and the flow of the refrigerant can be made smoother.

（第４の実施形態）
次に、第４の実施形態に係る冷却装置について、第１の実施形態に係る冷却装置と異なる点を中心に図５を参照して説明する。また、第４の実施形態に係る冷却装置について、第１の実施形態に係る冷却装置と同様の構造には同じ番号を付し、説明を省略する。図５は、本発明の第４の実施形態に係る冷却装置の構造を示す断面図である。図５は、図２相当の図である。 (Fourth embodiment)
Next, a cooling device according to a fourth embodiment will be described with reference to FIG. 5 with a focus on differences from the cooling device according to the first embodiment. Moreover, about the cooling device which concerns on 4th Embodiment, the same number is attached | subjected to the structure similar to the cooling device which concerns on 1st Embodiment, and description is abbreviate | omitted. FIG. 5 is a sectional view showing the structure of a cooling device according to the fourth embodiment of the present invention. FIG. 5 is a view corresponding to FIG.

第４の実施形態に係る冷却装置では、仕切り板６に形成された孔７１と、孔７１の直上に配置された多孔質体５１と、多孔質体５１の直上に冷却板１を介して配置された絶縁板２１と、絶縁板２１の直上に配置された半導体素子３１と、仕切り板６に形成された孔７２と、孔７２の直上に配置された多孔質体５２と、多孔質体５２の直上に冷却板１を介して配置された絶縁板２２と、絶縁板２２の直上に配置された半導体素子３２と、仕切り板６に形成された孔７３と、孔７３の直上に配置された多孔質体５３と、多孔質体５３の直上に冷却板１を介して配置された絶縁板２３と、絶縁板２３の直上に配置された半導体素子３３とを備えている。ここで、半導体素子３１乃至３３は、半導体素子３と大きさおよび発熱量の大きさ以外全く同じである。更に、絶縁板２１乃至２３は絶縁板２と大きさ以外全く同じであり、多孔質体５１乃至５３は多孔質体５と大きさ以外全く同じであり、孔７１乃至７３は孔７と大きさ以外全く同じである。また、孔７１は多孔質体５１よりも小さく形成され、孔７２は多孔質体５２よりも小さく形成され、孔７３は多孔質体５３よりも小さく形成されている。また、第４の実施形態に係る冷却装置における冷媒経路は、第１の実施形態と同様である。これにより、第１の実施形態と同様の効果を取得することができる。 In the cooling device according to the fourth embodiment, the holes 71 formed in the partition plate 6, the porous body 51 disposed immediately above the holes 71, and the cooling plate 1 are disposed directly above the porous body 51. Insulating plate 21, semiconductor element 31 disposed immediately above insulating plate 21, hole 72 formed in partition plate 6, porous body 52 disposed immediately above hole 72, and porous body 52 Insulating plate 22 disposed immediately above cooling plate 1, semiconductor element 32 disposed immediately above insulating plate 22, hole 73 formed in partition plate 6, and disposed directly above hole 73 A porous body 53, an insulating plate 23 disposed directly above the porous body 53 via the cooling plate 1, and a semiconductor element 33 disposed directly above the insulating plate 23 are provided. Here, the semiconductor elements 31 to 33 are exactly the same as the semiconductor element 3 except for the size and the amount of heat generation. Further, the insulating plates 21 to 23 are exactly the same as the insulating plate 2 except for the size, the porous bodies 51 to 53 are exactly the same as the porous body 5 except for the size, and the holes 71 to 73 are the same size as the hole 7. Except the same. The holes 71 are formed smaller than the porous body 51, the holes 72 are formed smaller than the porous body 52, and the holes 73 are formed smaller than the porous body 53. The refrigerant path in the cooling device according to the fourth embodiment is the same as that of the first embodiment. Thereby, the effect similar to 1st Embodiment is acquirable.

更に、第４の実施形態に係る冷却装置では、半導体素子３１乃至３３の大きさが夫々異なっており、半導体素子３３＞半導体素子３２＞半導体素子３１の関係となっている。半導体素子３１乃至３３に合わせて、絶縁板２１乃至２３の大きさ、多孔質体５１乃至５３の大きさおよび孔７１乃至７３の大きさも異なっている。そして、絶縁板２３＞絶縁板２２＞絶縁板２１、多孔質体５３＞多孔質体５２＞多孔質体５１、孔７３＞孔７２＞孔７１の関係となっている。すなわち、第４の実施形態に係る冷却装置では、多孔質体５１乃至５３の大きさ、孔７１乃至７３の大きさを、半導体素子３１乃至３３の大きさに比例させている。これにより、半導体素子３１乃至３３の大きさが夫々異なっても、半導体素子３１乃至３３全体を均一に冷却することができる。 Furthermore, in the cooling device according to the fourth embodiment, the sizes of the semiconductor elements 31 to 33 are different, and the relationship of the semiconductor element 33> the semiconductor element 32> the semiconductor element 31 is satisfied. According to the semiconductor elements 31 to 33, the sizes of the insulating plates 21 to 23, the sizes of the porous bodies 51 to 53, and the sizes of the holes 71 to 73 are also different. Insulating plate 23> insulating plate 22> insulating plate 21, porous body 53> porous body 52> porous body 51, hole 73> hole 72> hole 71. That is, in the cooling device according to the fourth embodiment, the sizes of the porous bodies 51 to 53 and the sizes of the holes 71 to 73 are proportional to the sizes of the semiconductor elements 31 to 33. Thereby, even if the sizes of the semiconductor elements 31 to 33 are different, the entire semiconductor elements 31 to 33 can be cooled uniformly.

（第５の実施形態）
次に、第５の実施形態に係る冷却装置について、第１の実施形態に係る冷却装置と異なる点を中心に図６を参照して説明する。また、第５の実施形態に係る冷却装置について、第１の実施形態に係る冷却装置と同様の構造には同じ番号を付し、説明を省略する。図６は、本発明の第５の実施形態に係る冷却装置の構造を示す断面図である。図６は、図２相当の図である。 (Fifth embodiment)
Next, a cooling device according to a fifth embodiment will be described with reference to FIG. 6 with a focus on differences from the cooling device according to the first embodiment. Moreover, about the cooling device which concerns on 5th Embodiment, the same number is attached | subjected to the structure similar to the cooling device which concerns on 1st Embodiment, and description is abbreviate | omitted. FIG. 6 is a cross-sectional view showing the structure of a cooling device according to the fifth embodiment of the present invention. FIG. 6 is a view corresponding to FIG.

第５の実施形態に係る冷却装置では、仕切り板６に形成された孔７４と、孔７４の直上に配置された多孔質体５４と、多孔質体５４の直上に冷却板１を介して配置された絶縁板２４と、絶縁板２４の直上に配置された半導体素子３４と、仕切り板６に形成された孔７５と、孔７５の直上に配置された多孔質体５５と、多孔質体５５の直上に冷却板１を介して配置された絶縁板２５と、絶縁板２５の直上に配置された半導体素子３５と、仕切り板６に形成された孔７６と、孔７６の直上に配置された多孔質体５６と、多孔質体５６の直上に冷却板１を介して配置された絶縁板２６と、絶縁板２６の直上に配置された半導体素子３６とを備えている。ここで、半導体素子３４乃至３６は、半導体素子３と発熱量の大きさ以外全く同じである。更に、絶縁板２４乃至２６は絶縁板２と全く同じであり、多孔質体５４乃至５６は多孔質体５と大きさ以外全く同じであり、孔７４乃至７６は孔７と大きさ以外全く同じである。また、孔７４は多孔質体５４よりも小さく形成され、孔７５は多孔質体５５よりも小さく形成され、孔７６は多孔質体５６よりも小さく形成されている。また、第５の実施形態に係る冷却装置における冷媒経路は、第１の実施形態と同様である。これにより、第１の実施形態と同様の効果を取得することができる。 In the cooling device according to the fifth embodiment, the holes 74 formed in the partition plate 6, the porous body 54 disposed immediately above the holes 74, and the cooling plate 1 are disposed directly above the porous body 54. Insulating plate 24, semiconductor element 34 disposed immediately above insulating plate 24, hole 75 formed in partition plate 6, porous body 55 disposed immediately above hole 75, and porous body 55 An insulating plate 25 disposed immediately above the cooling plate 1, a semiconductor element 35 disposed immediately above the insulating plate 25, a hole 76 formed in the partition plate 6, and a hole 76 disposed directly above the hole 76. A porous body 56, an insulating plate 26 disposed directly above the porous body 56 via the cooling plate 1, and a semiconductor element 36 disposed directly above the insulating plate 26 are provided. Here, the semiconductor elements 34 to 36 are exactly the same as the semiconductor element 3 except for the amount of heat generation. Further, the insulating plates 24 to 26 are exactly the same as the insulating plate 2, the porous bodies 54 to 56 are exactly the same as the porous body 5 except for the size, and the holes 74 to 76 are exactly the same as the hole 7 except for the size. It is. The hole 74 is formed smaller than the porous body 54, the hole 75 is formed smaller than the porous body 55, and the hole 76 is formed smaller than the porous body 56. The refrigerant path in the cooling device according to the fifth embodiment is the same as that in the first embodiment. Thereby, the effect similar to 1st Embodiment is acquirable.

更に、第５の実施形態に係る冷却装置では、半導体素子３１乃至３３の発熱量の大きさが夫々異なっており、半導体素子３６＞半導体素子３５＞半導体素子３４の関係となっている。半導体素子３４乃至３６の発熱量の大きさに合わせて、多孔質体５４乃至５６の大きさおよび孔７４乃至７６の大きさも異なっている。そして、多孔質体５６＞多孔質体５５＞多孔質体５４、孔７６＞孔７５＞孔７４の関係となっている。すなわち、第５の実施形態に係る冷却装置では、多孔質体５４乃至５６の大きさ、孔７４乃至７６の大きさを、半導体素子３４乃至３６の発熱量の大きさに比例させている。これにより、半導体素子３４乃至３６の発熱量の大きさが夫々異なっても、半導体素子３４乃至３６の温度を均一にすることができる。よって、半導体素子３４乃至３６間の電気的特性（オン抵抗やスイッチング損失等）の均一性を確保することができる。 Furthermore, in the cooling device according to the fifth embodiment, the magnitudes of heat generation of the semiconductor elements 31 to 33 are different, and the relationship of semiconductor element 36> semiconductor element 35> semiconductor element 34 is established. The sizes of the porous bodies 54 to 56 and the sizes of the holes 74 to 76 are also different according to the amount of heat generated by the semiconductor elements 34 to 36. The relationship is porous body 56> porous body 55> porous body 54, hole 76> hole 75> hole 74. That is, in the cooling device according to the fifth embodiment, the size of the porous bodies 54 to 56 and the size of the holes 74 to 76 are proportional to the amount of heat generated by the semiconductor elements 34 to 36. Thereby, even if the magnitude | size of the emitted-heat amount of the semiconductor elements 34 thru | or 36 differs, the temperature of the semiconductor elements 34 thru | or 36 can be made uniform. Therefore, it is possible to ensure uniformity of electrical characteristics (on resistance, switching loss, etc.) between the semiconductor elements 34 to 36.

（第６の実施形態）
次に、第６の実施形態に係る冷却装置について、第１の実施形態に係る冷却装置と異なる点を中心に図７を参照して説明する。また、第６の実施形態に係る冷却装置について、第１の実施形態に係る冷却装置と同様の構造には同じ番号を付し、説明を省略する。図７は、本発明の第６の実施形態に係る冷却装置の多孔質体周辺部を示す図である。図７（Ａ）は図２の多孔質体周辺部Ｃ相当の図を示し、図７（Ｂ）は図１の多孔質体周辺部Ｂ相当の図を示している。第６の実施形態に係る冷却装置では、仕切り板６に形成された孔７７および７８と、孔７７および７８の直上に配置された楕円形の柱の多孔質体５７と、多孔質体５７の直上に冷却板１を介して配置された絶縁板２７と、絶縁板２７の直上に配置された半導体素子３７および３８とを備えている。これにより、半導体素子３７の直下に孔７７が配置され、半導体素子３８の直下に孔７８が配置される。 (Sixth embodiment)
Next, a cooling device according to a sixth embodiment will be described with reference to FIG. 7 with a focus on differences from the cooling device according to the first embodiment. Moreover, about the cooling device which concerns on 6th Embodiment, the same number is attached | subjected to the structure similar to the cooling device which concerns on 1st Embodiment, and description is abbreviate | omitted. FIG. 7 is a view showing a porous body peripheral portion of the cooling device according to the sixth embodiment of the present invention. 7A shows a view corresponding to the porous body peripheral portion C in FIG. 2, and FIG. 7B shows a view corresponding to the porous body peripheral portion B in FIG. In the cooling device according to the sixth embodiment, the holes 77 and 78 formed in the partition plate 6, the elliptical column porous body 57 disposed immediately above the holes 77 and 78, and the porous body 57 An insulating plate 27 disposed directly above the cooling plate 1 and semiconductor elements 37 and 38 disposed immediately above the insulating plate 27 are provided. As a result, the hole 77 is disposed immediately below the semiconductor element 37, and the hole 78 is disposed directly below the semiconductor element 38.

ここで、半導体素子３７としてＩＧＢＴを、半導体素子３８としてダイオードを各々想定している。更に、絶縁板２７は絶縁板２と大きさ以外全く同じであり、多孔質体５７は多孔質体５と形状および大きさ以外全く同じであり、孔７７および７８は孔７と大きさ以外全く同じである。また、孔７７は多孔質体５７よりも小さく形成され、孔７８は多孔質体５７よりも小さく形成されている。また、第６の実施形態に係る冷却装置における冷媒経路は、第１の実施形態と同様である。これにより、第１の実施形態と同様の効果を取得することができる。 Here, an IGBT is assumed as the semiconductor element 37, and a diode is assumed as the semiconductor element 38. Further, the insulating plate 27 is exactly the same as the insulating plate 2 except for the size, the porous body 57 is exactly the same as the porous body 5 except for the shape and size, and the holes 77 and 78 are exactly the same as the hole 7 except for the size. The same. The holes 77 are formed smaller than the porous body 57, and the holes 78 are formed smaller than the porous body 57. The refrigerant path in the cooling device according to the sixth embodiment is the same as that in the first embodiment. Thereby, the effect similar to 1st Embodiment is acquirable.

更に、第６の実施形態に係る冷却装置では、複数の発熱体である半導体素子３７および３８に対して、複数の多孔質体のうちの１個である多孔質体５７が配置され、複数の多孔質体のうちの１個である多孔質体５７に対して、複数の孔である孔７７および７８が配置されているので、ＩＧＢＴである半導体素子３７とダイオードである半導体素子３８のペア性が強く、交互に発熱を生じる関係、すなわち、片方が発熱している時は他方は発熱しない関係にある場合には、多孔質体５７における発熱していない半導体素子（例えば、半導体素子３８）の直下の部分を通過した冷媒を、発熱している半導体素子（例えば、半導体素子３７）の冷却に使用することができる。結果的に、半導体素子３７および３８の温度上昇を低く抑えることができる。 Furthermore, in the cooling device according to the sixth embodiment, a porous body 57 that is one of the plurality of porous bodies is disposed with respect to the semiconductor elements 37 and 38 that are the plurality of heating elements, and Since the holes 77 and 78 that are a plurality of holes are arranged with respect to the porous body 57 that is one of the porous bodies, the pair property of the semiconductor element 37 that is an IGBT and the semiconductor element 38 that is a diode. In the case where there is a strong relationship and heat is generated alternately, that is, when one is generating heat and the other is not generating heat, the non-heat generating semiconductor element (for example, the semiconductor element 38) of the porous body 57 The refrigerant that has passed through the portion immediately below can be used for cooling a semiconductor element that generates heat (for example, the semiconductor element 37). As a result, the temperature rise of the semiconductor elements 37 and 38 can be suppressed low.

なお、以上に述べた実施形態は、本発明の実施の一例であり、本発明の範囲はこれらに限定されるものでなく、特許請求の範囲に記載した範囲内で、他の様々な実施形態に適用可能である。例えば、第１乃至第６の実施形態に係る冷却装置では、冷却板１を主に銅やアルミニウムから形成しているが、特にこれに限定されるものでなく、熱伝達率の高い金属であれば、いずれの材料から形成しても良い。同様に、絶縁板２、２１乃至２７をセラミック基板から形成しているが、特にこれに限定されるものでなく、絶縁材料であれば、いずれの材料から形成しても良い。 The embodiment described above is an example of the implementation of the present invention, and the scope of the present invention is not limited thereto, and other various embodiments are within the scope described in the claims. It is applicable to. For example, in the cooling devices according to the first to sixth embodiments, the cooling plate 1 is mainly made of copper or aluminum. However, the cooling plate 1 is not particularly limited to this and may be a metal having a high heat transfer coefficient. Any material may be used. Similarly, although the insulating plates 2 and 21 to 27 are formed from a ceramic substrate, the present invention is not particularly limited to this, and any insulating material may be used as long as it is an insulating material.

また、第１乃至第５の実施形態に係る冷却装置では、半導体素子３、３１乃至３６として、ＩＧＢＴまたはダイオードを用いているが、特にこれに限定されるものでなく、他の発熱体でも適用可能である。同様に、第６の実施形態に係る冷却装置では、半導体素子３７としてＩＧＢＴを、半導体素子３８としてダイオードを用いているが、特にこれに限定されるものでなく、ペア性が強く、交互に発熱を生じる関係、すなわち、片方が発熱している時は他方は発熱しない関係にある発熱体であれば、他の発熱体でも適用可能である。 In the cooling devices according to the first to fifth embodiments, IGBTs or diodes are used as the semiconductor elements 3 and 31 to 36. However, the present invention is not limited to this, and other heating elements are also applicable. Is possible. Similarly, in the cooling device according to the sixth embodiment, an IGBT is used as the semiconductor element 37 and a diode is used as the semiconductor element 38. However, the present invention is not limited to this, and the pair property is strong and alternately generates heat. Any other heating element is applicable as long as the heating element is in a relationship that generates heat, that is, when one is generating heat and the other is not generating heat.

また、第１乃至第３の実施形態に係る冷却装置では、６個の絶縁板２、６個の半導体素子３、６個の多孔質体５、１１および１２、６個の孔７が配置されているが、特にこれに限定されるものでなく、複数であれば、何個でも良い。同様に、第４の実施形態に係る冷却装置では、半導体素子３１乃至３３、絶縁板２１乃至２３、多孔質体５１乃至５３および孔７１乃至７３を各々２組配置しているが、特にこれに限定されるものでなく、何組でも良い。同様に、第５の実施形態に係る冷却装置では、半導体素子３４乃至３６、絶縁板２４乃至２６、多孔質体５４乃至５６および孔７４乃至７６を各々２組配置しているが、特にこれに限定されるものでなく、何組でも良い。更に、第６の実施形態に係る冷却装置では、半導体素子３７および３８、絶縁板２７、多孔質体５７、孔７７および７８を各々６組配置しているが、特にこれに限定されるものでなく、何組でも良い。 In the cooling device according to the first to third embodiments, six insulating plates 2, six semiconductor elements 3, six porous bodies 5, 11 and 12, and six holes 7 are arranged. However, it is not particularly limited to this, and any number may be used as long as there are a plurality. Similarly, in the cooling device according to the fourth embodiment, the semiconductor elements 31 to 33, the insulating plates 21 to 23, the porous bodies 51 to 53, and the holes 71 to 73 are arranged in two sets, respectively. It is not limited and any number of pairs is acceptable. Similarly, in the cooling device according to the fifth embodiment, the semiconductor elements 34 to 36, the insulating plates 24 to 26, the porous bodies 54 to 56, and the holes 74 to 76 are arranged in two sets, respectively. It is not limited and any number of pairs is acceptable. Furthermore, in the cooling device according to the sixth embodiment, six sets of the semiconductor elements 37 and 38, the insulating plate 27, the porous body 57, and the holes 77 and 78 are arranged, but the present invention is particularly limited to this. There can be any number of pairs.

また、第６の実施形態に係る冷却装置では、多孔質体５７に対して２個の孔７７および７８を仕切り板６に形成しているが、特にこれに限定されるものでなく、１個の孔でも、同様の効果を取得できる。 Further, in the cooling device according to the sixth embodiment, the two holes 77 and 78 are formed in the partition plate 6 with respect to the porous body 57, but the present invention is not particularly limited thereto, and one hole is provided. The same effect can be obtained with the holes.

また、第１乃至第５の実施形態に係る冷却装置では、１個の半導体素子に対して、１個の多孔質体を配置しているが、特にこれに限定されるものでなく、１個の半導体素子に対して、複数の多孔質体を配置しても良い。 In the cooling devices according to the first to fifth embodiments, one porous body is arranged for one semiconductor element. However, the present invention is not particularly limited to this, and one piece is provided. A plurality of porous bodies may be arranged for the semiconductor element.

また、第２の実施形態に係る冷却装置では、円柱状の多孔質体５における仕切り板側端部の面積よりも仕切り板６と対向する端部の面積を小さく形成した立体である多孔質体１１を用いているが、特にこれに限定されるものでなく、多角柱における仕切り板側端部の面積よりも仕切り板６と対向する端部の面積を小さく形成した立体からなる多孔質体を用いても良い。また、例えば、図８乃至図１３に示す変形例でも良い。以下、図８乃至図１３に示す変形例について説明する。図８乃至図１３は、図２に示す冷却装置の多孔質体周辺部Ｃの変形例を示す断面図である。図８は、多孔質体５の中心を通る断面における孔側端部が凹形状に切り欠かれた立体である多孔質体１３を用いた変形例である。図９は、多孔質体５の仕切り板側端部の側面に、壁９１を配置した変形例である。なお、壁９１の高さは均一である。図１０は、多孔質体５の代わりに、単位面積当たりの気孔数が大きい大気孔数層１４ｂを内周部である中心部に有し、単位面積当たりの気孔数が小さい小気孔数層１４ａを外周部に有する円柱状の多孔質体１４を用いた変形例である。これにより、外周部より内周部の気孔率を高くしている。図１１は、多孔質体５の代わりに、気孔の直径が大きい大気孔径層１５ｂを内周部である中心部に有し、気孔の直径が小さい小気孔径層１５ａを外周部に有する円柱状の多孔質体１５を用いた変形例である。これにより、外周部より内周部の気孔率を高くしている。図１２は、気孔率の低い第１の層である単位面積当たりの気孔数が小さい小気孔数層１６ａと気孔率の高い第２の層である単位面積当たりの気孔数が大きい大気孔数層１６ｂとを備え、中心を通る断面における仕切り板６側に凹形状の小気孔数層１６ａが配置され、小気孔数層１６ａ方向に突出した凸形状に形成された大気孔数層１６ｂが小気孔数層１６ａの直上に接合された円柱状の多孔質体１６を、多孔質体５の代わりに用いた変形例である。図１３は、気孔率の低い第１の層である気孔の直径が小さい小気孔径層１７ａと気孔率の高い第２の層である気孔の直径が大きい大気孔径層１７ｂとを備え、中心を通る断面における仕切り板６側に凹形状の小気孔径層１７ａが配置され、小気孔径層１７ａ方向に突出した凸形状に形成した大気孔径層１７ｂが小気孔径層１７ａの直上に接合された円柱状の多孔質体１７を、多孔質体５の代わりに用いた変形例である。上述した図８乃至図１３の変形例でも、第２の実施形態と同様の効果を取得できる。 In the cooling device according to the second embodiment, the porous body is a solid body in which the area of the end facing the partition plate 6 is smaller than the area of the end on the partition plate side in the cylindrical porous body 5. 11 is used, but the present invention is not particularly limited to this. A porous body made of a solid body in which the area of the end facing the partition plate 6 is smaller than the area of the end on the partition plate side in the polygonal column. It may be used. For example, the modification shown in FIGS. 8 to 13 may be used. Hereinafter, modified examples shown in FIGS. 8 to 13 will be described. 8 to 13 are cross-sectional views showing modifications of the porous body peripheral portion C of the cooling device shown in FIG. FIG. 8 is a modification using a porous body 13 that is a solid body in which the hole side end portion in a cross section passing through the center of the porous body 5 is cut into a concave shape. FIG. 9 is a modification in which a wall 91 is disposed on the side surface of the end portion on the partition plate side of the porous body 5. The height of the wall 91 is uniform. FIG. 10 shows a small pore number layer 14a having a pore number layer 14b having a large number of pores per unit area in a central portion which is an inner peripheral portion and having a small number of pores per unit area instead of the porous body 5. It is the modification using the cylindrical porous body 14 which has the outer peripheral part. Thereby, the porosity of an inner peripheral part is made higher than an outer peripheral part. In FIG. 11, instead of the porous body 5, a cylindrical shape having an air hole diameter layer 15 b having a large pore diameter in the central portion which is the inner peripheral portion and a small pore diameter layer 15 a having a small pore diameter in the outer peripheral portion. This is a modification using the porous body 15. Thereby, the porosity of an inner peripheral part is made higher than an outer peripheral part. FIG. 12 shows a low-porosity first layer having a small number of pores 16a per unit area and a high-porosity second layer having a large number of pores per unit area. 16b, and a concave small pore number layer 16a is disposed on the partition plate 6 side in a cross section passing through the center, and the air pore number layer 16b formed in a convex shape protruding in the direction of the small pore number layer 16a is a small pore. This is a modified example in which a cylindrical porous body 16 joined immediately above several layers 16 a is used instead of the porous body 5. FIG. 13 includes a small pore diameter layer 17a having a small pore diameter as a first layer having a low porosity and an air pore diameter layer 17b having a large pore diameter as a second layer having a high porosity. A concave-shaped small pore diameter layer 17a is arranged on the partition plate 6 side in the passing section, and an air-pore diameter layer 17b formed in a convex shape protruding in the direction of the small-pore diameter layer 17a is joined immediately above the small-pore diameter layer 17a. This is a modification in which a cylindrical porous body 17 is used instead of the porous body 5. In the modified examples of FIGS. 8 to 13 described above, the same effects as those of the second embodiment can be obtained.

また、第３の実施形態に係る冷却装置では、上部流路１０ｂの冷媒出口４と反対方向に部分的に突出した卵型の柱である多孔質体１２を用いているが、特にこれに限定されるものでなく、上部流路１０ｂの冷媒出口４と反対方向に部分的に突出した凸形状を有していれば、他の形状の柱からなる多孔質体を用いても良い。更に、上部流路１０ｂの冷媒出口４と反対方向に部分的に突出した凸形状を有していない場合、例えば、図１４乃至図１６に示す変形例の場合でも良い。以下、図１４乃至図１６に示す変形例について説明する。図１４乃至図１６は、図２に示す冷却装置の多孔質体周辺部Ｃの変形例を示す断面図である。図１４は、多孔質体５の仕切り板側端部の側面に壁９２を配置した変形例である。壁９２の高さは、上部流路１０ｂの冷媒出口４側よりも冷媒出口４の反対側が高くなっている。図１５は、多孔質体５の代わりに、単位面積当たりの気孔数が大きい大気孔数層１８ｂを上部流路１０ｂの冷媒出口４側に有し、単位面積当たりの気孔数が小さい小気孔数層１８ａを冷媒出口４の反対側に有する円柱状の多孔質体１８を用いた変形例である。これにより、上部流路１０ｂの冷媒出口４の反対側よりも冷媒出口４側の気孔率を高くしている。図１６は、多孔質体５の代わりに、気孔の直径が大きい大気孔径層１９ｂを上部流路１０ｂの冷媒出口４側に有し、気孔の直径が小さい小気孔径層１９ａを冷媒出口４の反対側に有する円柱状の多孔質体１９を用いた変形例である。これにより、上部流路１０ｂの冷媒出口４の反対側よりも冷媒出口４側の気孔の直径を大きくしている。上述した図１４乃至図１６の変形例でも、第３の実施形態と同様の効果を取得できる。 Further, in the cooling device according to the third embodiment, the porous body 12 that is an egg-shaped column partially protruding in the direction opposite to the refrigerant outlet 4 of the upper flow path 10b is used, but the invention is particularly limited thereto. However, as long as it has a convex shape that partially protrudes in the direction opposite to the refrigerant outlet 4 of the upper flow path 10b, a porous body made of pillars of other shapes may be used. Furthermore, when it does not have a convex shape that partially protrudes in the direction opposite to the refrigerant outlet 4 of the upper flow path 10b, for example, the modification shown in FIGS. 14 to 16 may be used. Hereinafter, modified examples shown in FIGS. 14 to 16 will be described. 14 to 16 are cross-sectional views showing modifications of the porous body peripheral portion C of the cooling device shown in FIG. FIG. 14 is a modification in which a wall 92 is disposed on the side surface of the end portion on the partition plate side of the porous body 5. The height of the wall 92 is higher on the opposite side of the refrigerant outlet 4 than on the refrigerant outlet 4 side of the upper channel 10b. FIG. 15 shows the number of small pores having a small number of pores per unit area instead of the porous body 5 having an air pore number layer 18b having a large number of pores per unit area on the refrigerant outlet 4 side of the upper flow path 10b. This is a modification using a cylindrical porous body 18 having a layer 18 a on the opposite side of the refrigerant outlet 4. Thereby, the porosity of the refrigerant outlet 4 side is made higher than the side opposite to the refrigerant outlet 4 of the upper channel 10b. In FIG. 16, instead of the porous body 5, an air hole diameter layer 19 b having a large pore diameter is provided on the refrigerant outlet 4 side of the upper flow path 10 b, and a small pore diameter layer 19 a having a small pore diameter is provided at the refrigerant outlet 4. This is a modification using a cylindrical porous body 19 on the opposite side. Thereby, the diameter of the pores on the refrigerant outlet 4 side is made larger than that on the opposite side of the refrigerant outlet 4 of the upper channel 10b. The same effects as those of the third embodiment can also be obtained in the modified examples of FIGS. 14 to 16 described above.

また、第１の実施形態に係る冷却装置および図９乃至図１６に示した変形例の多孔質体５、１４乃至１９は円柱であるが、特にこれに限定されるものでなく、多角柱でも良い。更に、図８に示した変形例の多孔質体１３は、多孔質体５の中心を通る断面における孔側端部が凹形状に切り欠かれた立体であるが、特にこれに限定されるものでなく、多角柱の中心を通る断面における孔側端部が凹形状に切り欠かれた立体としても良い。また、図８乃至図１６に示した変形例に、上部流路１０ｂの冷媒出口４と反対方向に部分的に突出した凸形状を有する形状または卵型状に多孔質体５、１３乃至１９を形成した多孔質体を用いることもできる。更に、図８乃至図１６に示した変形例に、多孔質体５、１３乃至１９における仕切り板側端部の面積よりも仕切り板６と対向する端部の面積を小さく形成した立体である多孔質体を用いることもできる。更に、図９乃至図１６に示した変形例に、多孔質体５、１４乃至１９の中心を通る断面における孔側端部が凹形状に切り欠かれた立体である多孔質体を用いることもできる。更に、図１０乃至図１３、図１５および図１６に示した変形例に、多孔質体１４乃至１９の仕切り板側端部の側面に配置された均一の高さの壁９１を適用することもできる。更に、図１０乃至図１３、図１５および図１６に示した変形例に、多孔質体１４乃至１９の仕切り板側端部の側面に配置された、上部流路１０ｂの冷媒出口４側よりも冷媒出口４の反対側が高い壁９２を適用することもできる。 Further, the cooling device according to the first embodiment and the porous bodies 5 and 14 to 19 of the modifications shown in FIGS. 9 to 16 are cylinders, but are not particularly limited thereto, and may be polygonal columns. good. Further, the porous body 13 of the modified example shown in FIG. 8 is a solid body in which the hole side end portion in the cross section passing through the center of the porous body 5 is cut out in a concave shape, but is particularly limited to this. It is good also as a solid | solid by which the hole side edge part in the cross section which passes along the center of a polygonal column is notched in concave shape. Further, in the modification shown in FIGS. 8 to 16, the porous bodies 5, 13 to 19 are formed in a shape or an egg shape having a convex shape partially protruding in a direction opposite to the refrigerant outlet 4 of the upper flow path 10 b. The formed porous body can also be used. Further, in the modification shown in FIGS. 8 to 16, a three-dimensional porous body in which the area of the end facing the partition plate 6 is smaller than the area of the partition plate side end in the porous bodies 5, 13 to 19. A mass can also be used. Further, in the modification shown in FIGS. 9 to 16, a porous body having a solid shape in which the hole-side end portion in the cross section passing through the centers of the porous bodies 5 and 14 to 19 is notched into a concave shape may be used. it can. Furthermore, a wall 91 having a uniform height disposed on the side surface of the partition plate side end portion of the porous body 14 to 19 may be applied to the modification examples shown in FIGS. 10 to 13, 15 and 16. it can. Further, in the modification shown in FIGS. 10 to 13, 15, and 16, than the refrigerant outlet 4 side of the upper flow path 10 b disposed on the side surface of the end portion on the partition plate side of the porous bodies 14 to 19. It is also possible to apply a wall 92 on the opposite side of the refrigerant outlet 4.

また、第４および第５の実施形態に係る冷却装置では、円柱状の多孔質体５１乃至５６を用いているが、特にこれに限定されるものでなく、多角柱状の多孔質体を用いても良い。更に、第２の実施形態のように、仕切り板側端部の面積よりも仕切り板６と対向する端部の面積を小さく形成した立体からなる多孔質体を用いても良いし、第３の実施形態のように、上部流路１０ｂの冷媒出口４と反対方向に部分的に突出した凸形状を有する形状の柱または卵型の柱からなる多孔質体を用いても良い。また、図８乃至図１６に示した変形例を適用しても良いし、図８乃至図１６に示した変形例の多孔質体を多角柱からなる多孔質体に置換した変形例を適用しても良い。更に、上部流路１０ｂの冷媒出口４と反対方向に部分的に突出した凸形状を有する形状または卵型状に多孔質体５、１３乃至１９を形成した多孔質体を、図８乃至図１６に示した変形例に用いた変形例を適用しても良いし、多孔質体５、１３乃至１９における仕切り板側端部の面積よりも仕切り板６と対向する端部の面積を小さく形成した立体である多孔質体を、図８乃至図１６に示した変形例に用いた変形例を適用しても良い。更に、多孔質体５、１４乃至１９の中心を通る断面における孔側端部が凹形状に切り欠かれた立体である多孔質体を、図９乃至図１６に示した変形例に用いた変形例を適用しても良い。更に、多孔質体１４乃至１９の仕切り板側端部の側面に配置された均一の高さの壁９１を、図１０乃至図１３、図１５および図１６に示した変形例に配置した変形例を適用しても良い。更に、多孔質体１４乃至１９の仕切り板側端部の側面に配置された、上部流路１０ｂの冷媒出口４側よりも冷媒出口４の反対側が高い壁９２を、図１０乃至図１３、図１５および図１６に示した変形例に配置した変形例を適用しても良い。 Further, in the cooling devices according to the fourth and fifth embodiments, the columnar porous bodies 51 to 56 are used. However, the present invention is not limited to this, and a polygonal columnar porous body is used. Also good. Furthermore, as in the second embodiment, a porous body made of a solid body in which the area of the end portion facing the partition plate 6 is smaller than the area of the end portion on the partition plate side may be used. As in the embodiment, a porous body formed of a column having a convex shape or a egg-shaped column partially protruding in a direction opposite to the refrigerant outlet 4 of the upper channel 10b may be used. Also, the modification examples shown in FIGS. 8 to 16 may be applied, or the modification example in which the porous body of the modification examples shown in FIGS. 8 to 16 is replaced with a porous body made of polygonal columns may be applied. May be. Furthermore, the porous body in which the porous bodies 5 and 13 to 19 are formed in a shape having a convex shape or partially projecting in the opposite direction to the refrigerant outlet 4 of the upper flow path 10b is shown in FIGS. The modification example used in the modification example shown in FIG. 6 may be applied, and the area of the end part facing the partition plate 6 is made smaller than the area of the partition plate side end part in the porous bodies 5, 13 to 19. You may apply the modification used for the modification shown in FIG. 8 thru | or 16 for the porous body which is a solid. Furthermore, the porous body which is a solid body in which the hole side end portion in the cross section passing through the centers of the porous bodies 5 and 14 to 19 is cut into a concave shape is used in the modification shown in FIGS. 9 to 16. An example may be applied. Further, a modified example in which the wall 91 having a uniform height disposed on the side surface of the end portion on the partition plate side of the porous bodies 14 to 19 is disposed in the modified examples shown in FIGS. 10 to 13, 15, and 16. May be applied. Furthermore, a wall 92 disposed on the side surface of the end portion on the partition plate side of the porous bodies 14 to 19 is higher on the opposite side of the refrigerant outlet 4 than the refrigerant outlet 4 side of the upper flow path 10b. The modification example arranged in the modification example shown in FIG. 15 and FIG. 16 may be applied.

また、第６の実施形態に係る冷却装置では、楕円形の柱状の多孔質体５７を用いているが、特にこれに限定されるものでなく、円柱状または多角柱状の多孔質体を用いても良い。更に、第２の実施形態のように、仕切り板側端部の面積よりも仕切り板６と対向する端部の面積を小さく形成した立体からなる多孔質体を用いても良いし、第３の実施形態のように、上部流路１０ｂの冷媒出口４と反対方向に部分的に突出した凸形状を有する形状の柱または卵型の柱からなる多孔質体を用いても良い。また、図８乃至図１６に示した変形例を適用しても良いし、図８乃至図１６に示した変形例の多孔質体を多角柱からなる多孔質体に置換した変形例を適用しても良い。更に、上部流路１０ｂの冷媒出口４と反対方向に部分的に突出した凸形状を有する形状または卵型状に多孔質体５、１３乃至１９を形成した多孔質体を、図８乃至図１６に示した変形例に用いた変形例を適用しても良いし、多孔質体５、１３乃至１９における仕切り板側端部の面積よりも仕切り板６と対向する端部の面積を小さく形成した立体である多孔質体を、図８乃至図１６に示した変形例に用いた変形例を適用しても良い。更に、多孔質体５、１４乃至１９の中心を通る断面における孔側端部が凹形状に切り欠かれた立体である多孔質体を、図９乃至図１６に示した変形例に用いた変形例を適用しても良い。更に、多孔質体１４乃至１９の仕切り板側端部の側面に配置された均一の高さの壁９１を、図１０乃至図１３、図１５および図１６に示した変形例に配置した変形例を適用しても良い。更に、多孔質体１４乃至１９の仕切り板側端部の側面に配置された、上部流路１０ｂの冷媒出口４側よりも冷媒出口４の反対側が高い壁９２を、図１０乃至図１３、図１５および図１６に示した変形例に配置した変形例を適用しても良い。 Further, in the cooling device according to the sixth embodiment, the elliptical columnar porous body 57 is used. However, the present invention is not limited to this, and a cylindrical or polygonal columnar porous body is used. Also good. Furthermore, as in the second embodiment, a porous body made of a solid body in which the area of the end portion facing the partition plate 6 is smaller than the area of the end portion on the partition plate side may be used. As in the embodiment, a porous body formed of a column having a convex shape or a egg-shaped column partially protruding in a direction opposite to the refrigerant outlet 4 of the upper channel 10b may be used. Also, the modification examples shown in FIGS. 8 to 16 may be applied, or the modification example in which the porous body of the modification examples shown in FIGS. 8 to 16 is replaced with a porous body made of polygonal columns may be applied. May be. Furthermore, the porous body in which the porous bodies 5 and 13 to 19 are formed in a shape having a convex shape or partially projecting in the opposite direction to the refrigerant outlet 4 of the upper flow path 10b is shown in FIGS. The modification example used in the modification example shown in FIG. 6 may be applied, and the area of the end part facing the partition plate 6 is made smaller than the area of the partition plate side end part in the porous bodies 5, 13 to 19. You may apply the modification used for the modification shown in FIG. 8 thru | or 16 for the porous body which is a solid. Furthermore, the porous body which is a solid body in which the hole side end portion in the cross section passing through the centers of the porous bodies 5 and 14 to 19 is cut into a concave shape is used in the modification shown in FIGS. 9 to 16. An example may be applied. Further, a modified example in which the wall 91 having a uniform height disposed on the side surface of the end portion on the partition plate side of the porous bodies 14 to 19 is disposed in the modified examples shown in FIGS. 10 to 13, 15, and 16. May be applied. Furthermore, a wall 92 disposed on the side surface of the end portion on the partition plate side of the porous bodies 14 to 19 is higher on the opposite side of the refrigerant outlet 4 than the refrigerant outlet 4 side of the upper flow path 10b. The modification example arranged in the modification example shown in FIG. 15 and FIG. 16 may be applied.

また、第１乃至第６の実施形態に係る冷却装置および図８乃至図１６に示した変形例の多孔質体５、１１乃至１９、５１乃至５７には、他の気孔と一部が接続される（オープンセル型の）球状の気孔が多数形成されているが、特にこれに限定されるものでなく、冷媒が多孔質体５、１１乃至１９、５１乃至５７内を通過できれば、いずれの形状の気孔でも適用可能である。更に、第１乃至第６の実施形態に係る冷却装置および図８乃至図１６に示した変形例では、多孔質体５、１１乃至１９、５１乃至５７の材料を説示していないが、熱伝達率が高い材料であれば、例えば、銅またはアルミニウム等の金属材料でも良い。 The cooling devices according to the first to sixth embodiments and the porous bodies 5, 11 to 19, 51 to 57 of the modified examples shown in FIGS. 8 to 16 are partially connected to other pores. However, the present invention is not limited to this, and any shape can be used as long as the refrigerant can pass through the porous bodies 5, 11 to 19, 51 to 57. It is also applicable to other pores. Furthermore, in the cooling device according to the first to sixth embodiments and the modification examples shown in FIGS. 8 to 16, the materials of the porous bodies 5, 11 to 19, 51 to 57 are not shown, but heat transfer As long as the material has a high rate, for example, a metal material such as copper or aluminum may be used.

また、第１乃至第６の実施形態に係る冷却装置では、冷媒として、冷却水を用いているが、特にこれに限定されるものでなく、他の流体を用いても良い。 In the cooling devices according to the first to sixth embodiments, cooling water is used as the coolant, but the invention is not particularly limited thereto, and other fluids may be used.

本発明の第１の実施形態に係る冷却装置の構造を示す図The figure which shows the structure of the cooling device which concerns on the 1st Embodiment of this invention 図１に示す冷却装置のＡＡ断面図AA sectional view of the cooling device shown in FIG. 本発明の第２の実施形態に係る冷却装置の多孔質体周辺部を示す断面図Sectional drawing which shows the porous body periphery part of the cooling device which concerns on the 2nd Embodiment of this invention. 本発明の第３の実施形態に係る冷却装置の多孔質体周辺部を示す平面図The top view which shows the porous body periphery part of the cooling device which concerns on the 3rd Embodiment of this invention. 本発明の第４の実施形態に係る冷却装置の構造を示す断面図Sectional drawing which shows the structure of the cooling device which concerns on the 4th Embodiment of this invention. 本発明の第５の実施形態に係る冷却装置の構造を示す断面図Sectional drawing which shows the structure of the cooling device which concerns on the 5th Embodiment of this invention 本発明の第６の実施形態に係る冷却装置の多孔質体周辺部を示す図The figure which shows the porous body periphery part of the cooling device which concerns on the 6th Embodiment of this invention. 図２に示す冷却装置の多孔質体周辺部の変形例を示す断面図Sectional drawing which shows the modification of the porous body periphery part of the cooling device shown in FIG. 図２に示す冷却装置の多孔質体周辺部の変形例を示す断面図Sectional drawing which shows the modification of the porous body periphery part of the cooling device shown in FIG. 図２に示す冷却装置の多孔質体周辺部の変形例を示す断面図Sectional drawing which shows the modification of the porous body periphery part of the cooling device shown in FIG. 図２に示す冷却装置の多孔質体周辺部の変形例を示す断面図Sectional drawing which shows the modification of the porous body periphery part of the cooling device shown in FIG. 図２に示す冷却装置の多孔質体周辺部の変形例を示す断面図Sectional drawing which shows the modification of the porous body periphery part of the cooling device shown in FIG. 図２に示す冷却装置の多孔質体周辺部の変形例を示す断面図Sectional drawing which shows the modification of the porous body periphery part of the cooling device shown in FIG. 図２に示す冷却装置の多孔質体周辺部の変形例を示す断面図Sectional drawing which shows the modification of the porous body periphery part of the cooling device shown in FIG. 図２に示す冷却装置の多孔質体周辺部の変形例を示す断面図Sectional drawing which shows the modification of the porous body periphery part of the cooling device shown in FIG. 図２に示す冷却装置の多孔質体周辺部の変形例を示す断面図Sectional drawing which shows the modification of the porous body periphery part of the cooling device shown in FIG.

Explanation of symbols

１冷却板、２絶縁板、３半導体素子、４冷媒出口、５多孔質体、
６仕切り板、７孔、８冷媒入口、
１０流路、１０ａ下部流路、１０ｂ上部流路、
１１、１２、１３、１４、１５、１６、１７、１８、１９多孔質体、
１４ａ、１６ａ、１８ａ小気孔数層、１４ｂ、１６ｂ、１８ｂ大気孔数層、
１５ａ、１７ａ、１９ａ小気孔径層、１５ｂ、１７ｂ、１９ｂ大気孔径層、
２１、２２、２３、２４、２５、２６、２７絶縁板、
３１、３２、３３、３４、３５、３６、３７、３８半導体素子、
５１、５２、５３、５４、５５、５６、５７多孔質体、
７１、７２、７３、７４、７５、７６、７７、７８孔、９１、９２壁、
Ｂ多孔質体周辺部、Ｃ多孔質体周辺部 1 cooling plate, 2 insulating plate, 3 semiconductor element, 4 refrigerant outlet, 5 porous body,
6 partition plate, 7 holes, 8 refrigerant inlet,
10 channel, 10a lower channel, 10b upper channel,
11, 12, 13, 14, 15, 16, 17, 18, 19 porous body,
14a, 16a, 18a Small pore number layer, 14b, 16b, 18b Atmospheric pore number layer,
15a, 17a, 19a Small pore size layer, 15b, 17b, 19b Atmospheric pore size layer,
21, 22, 23, 24, 25, 26, 27 insulation plate,
31, 32, 33, 34, 35, 36, 37, 38 semiconductor element,
51, 52, 53, 54, 55, 56, 57 porous body,
71, 72, 73, 74, 75, 76, 77, 78 holes, 91, 92 walls,
B porous body peripheral part, C porous body peripheral part

Claims

A partition plate that divides the flow path through which the refrigerant flows and divides the flow path into an upper flow path and a lower flow path;
For transferring heat generated from the heating element to the refrigerant, and the high heat transfer coefficient material disposed on the partition plate,
A hole formed at a position directly below each high heat transfer coefficient material in the partition plate,
The refrigerant is supplied from the lower flow path to the high heat transfer coefficient material through the holes ,
The high heat transfer rate material, the cooling device comprising a porous body der Rukoto.

The refrigerant passes through the porous body, wherein in the in the porous body hole and opposite ends, according to claim 1, characterized that you cool the heat generated from the heating element directly Cooling system.

The hole is a cooling device according to any one of claims 1 to 2, characterized in that the smaller than the high thermal conductivity material.

The high heat transfer rate material, cooling device according to any one of claims 1 to 3, characterized in that a polygonal or cylindrical.

The high heat transfer rate material, cooling device according to any one of claims 1 to 3, characterized in that the area of the end portion facing the partition plate than the area of the partition plate side end portion is smaller stereoscopic .

The high heat transfer rate material, cooling device according to any one of claims 1 to 5, characterized in that in the direction opposite to the outlet of the upper channel is a pillar of the pillar or oval having a convex shape.

The hole-side end portion in a cross section passing through the center of the high heat transfer coefficient material, cooling device according to any one of claims 1 to 6, characterized that you have been cut out in a concave shape.

Wherein the side surface of the partition plate side end portion of high heat transfer coefficient material, cooling device according to any one of claims 1 to 7, characterized that you place the wall.

Before the height of Kikabe the cooling device according to claim 8, wherein the high side opposite the outlet than the outlet side of the upper flow path.

The cooling device according to any one of claims 1 to 9 , wherein the high heat transfer coefficient material has a higher porosity in an inner peripheral portion than in an outer peripheral portion .

The high heat transfer rate material, cooling device according to claim 10 in which the pore diameter of the inner peripheral portion and wherein the magnitude Ikoto than the outer peripheral portion.

The high heat transfer rate material, cooling device according to any one of claims 1 to 9 opposite porosity of outlet side of the outlet of the upper passage is characterized by high Ikoto.

The high heat transfer rate material, cooling device according to claim 1 2 in which the pore diameter of the opposite outlet side of the outlet of the upper flow channel and said size Ikoto.

The high heat transfer coefficient material comprises a first layer having a low porosity and a second layer having a high porosity,
The concave first layer is arranged on the partition plate side in the cross section passing through the center,
The said 2nd layer formed in the convex shape protruded in the said 1st layer direction was joined just on the said 1st layer, The any one of Claim 1 thru | or 9 characterized by the above- mentioned. Cooling system.

Before SL than the pore diameter of the first layer, the cooling device according to claim 1 4, wherein the pore diameter of the second layer is large.

The cooling device according to any one of claims 1 to 15 , wherein the size of the high heat transfer coefficient material and the hole is proportional to the size of the heating element .

The size of the high heat transfer coefficient material and the hole, the cooling device according to any one of claims 1 to 16, characterized in that in proportion to the size of the heating value of the heating element.

For a plurality of the heating element, a cooling device according to any one of claims 1 to 17, characterized one is arranged Rukoto of the plurality of the high heat transfer coefficient material.

For one of the heating element, a cooling device according to any one of claims 1 to 1 7, wherein a plurality of the high heat transfer coefficient material is disposed.

For the one of the plurality of the high heat transfer coefficient material, cooling device according to any one of claims 1 to 1 9, wherein a plurality of said holes are arranged.