JP4950129B2 - Substrate processing apparatus, substrate processing method, program, and recording medium - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing while rotating the substrate so that the plate surface of the substrate is along the horizontal direction, and more particularly, a substrate capable of easily and accurately confirming the state of the substrate. The present invention relates to a processing apparatus and a substrate processing method. The present invention also provides a substrate processing method for processing while rotating the substrate so that the plate surface of the substrate is along the horizontal direction, and the substrate processing method capable of easily and accurately confirming the state of the substrate. The present invention relates to a program for execution and a recording medium storing the program.

  Conventionally, as disclosed in, for example, Patent Document 1, a substrate processing apparatus and a substrate processing method for processing a substrate while rotating the substrate in a state where the substrate is held so that the plate surface of the substrate is along the horizontal direction. Widely known. In many cases, processing of a substrate using the substrate processing apparatus is automatically performed including loading into the processing apparatus and unloading from the processing apparatus. Therefore, not only whether or not the processing apparatus itself is operating normally, but the state of the substrate to be processed, that is, whether or not the substrate is brought into the apparatus, and the substrate support position is normal. It is necessary to confirm whether or not the holding state of the substrate is normal. In particular, since it is thin, it is easy to flutter (bounce) during rotation, and since it has a substantially circular outer contour, it is easy to slip (displace) with respect to the processing device during rotation. When processing a semiconductor wafer (hereinafter, also simply referred to as a wafer), it is required to accurately monitor the state of the substrate.

Conventionally, the state of the substrate is confirmed by checking whether or not the substrate is held (supported) in a predetermined position in the processing apparatus using an optical non-contact sensor (so-called photoelectric sensor or the like). It has been done by knowing.
JP-A-6-9713

  However, when a substrate is processed, particularly when a semiconductor wafer is processed, a processing liquid (processing liquid) is usually used. In this case, the processing liquid collides with the substrate and is continuously scattered in the monitoring area by the optical system sensor, or the processing liquid stays in the monitoring area by the optical system sensor in a mist state, or is highly volatile. The processing liquid as the chemical solution is condensed on the optical system sensor, and the substrate holding state cannot be accurately determined.

  In the first place, it is not easy to incorporate an optical sensor for confirming the holding state of the substrate into the substrate processing apparatus. A movable element such as a nozzle for ejecting a chemical solution is disposed in an area for holding a substrate in the substrate processing apparatus. For this reason, if the optical system sensor is effectively arranged outside the movable range of the movable element, problems such as an increase in the size of the apparatus and an increase in manufacturing cost are caused.

  The present invention has been made in consideration of such points, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of easily and accurately confirming the state of a substrate. Another object of the present invention is to provide a program for executing a substrate processing method capable of easily and accurately confirming the state of a substrate, and a recording medium storing the program.

  As a result of repeated earnest research, the inventors of the present invention, when a gap is formed between the substrate and the table that supports the substrate from below, the pressure of the gap decreases by rotating the substrate, It was also found that the change in pressure changes according to the rotation speed of the substrate and the relative position of the substrate with respect to the table. The present invention is based on such knowledge of the present inventors.

  A substrate processing apparatus according to the present invention is a substrate processing apparatus that performs processing while rotating the substrate so that the plate surface of the substrate is in a horizontal direction, and includes a rotatable base plate having a plurality of protruding members protruding upward. A table that can hold the substrate in a rotating manner so that the protruding member contacts the substrate from below and forms a gap between the substrate and the table, and a rotational drive that rotationally drives the base plate. And a pressure monitoring device having a mechanism, a pressure measuring pipe having one end opened in the gap, and a pressure sensor connected to the pressure measuring pipe.

  The substrate processing apparatus according to the present invention further includes a control device connected to the pressure monitoring device, and the control device checks the state of the substrate based on the pressure in the gap measured by the pressure monitoring device. It may be configured to do so. In such a substrate processing apparatus according to the present invention, the control device determines the pressure measured by the pressure monitoring device based on at least the rotation speed of the substrate at the time of measurement when the base plate is rotated. It may be configured to determine that there is an abnormality when it is higher than a predetermined value or when it is equal to or higher than the predetermined value. Alternatively, in such a substrate processing apparatus according to the present invention, the control device may determine whether or not the pressure measured by the pressure monitoring device is rotating when the substrate is rotated during measurement. The rotation speed of the substrate may be determined to be abnormal if it is higher than a predetermined value determined based on at least a predetermined value or more than the predetermined value.

  In the substrate processing apparatus according to the present invention, the base plate may have an opening formed at a position facing the substrate, and the table may further include a lift plate disposed in the opening of the base plate, A processing apparatus is a rotary shaft member coupled to the base plate and coupled to the rotational drive mechanism so as to be rotationally driven, the rotary shaft member having a hollow portion communicating with the opening of the base plate; , Slidable with respect to the rotating shaft member, extends in the hollow portion of the rotating shaft member, is connected to the lifting plate, is connected to the lifting shaft member, and is driven to lift the lifting shaft member An elevating drive mechanism that extends in the elevating shaft member, and one end of the pressure measuring duct is connected to the elevating plate. It may be adapted to be opened to the gap located between the substrate and.

  Alternatively, the substrate processing apparatus according to the present invention further includes a rotating shaft member coupled to the base plate and coupled to the rotational driving mechanism so as to be rotationally driven. The inside of the member may be extended so that one end of the pressure measuring conduit is opened to the gap located between the base plate and the substrate.

  Furthermore, the substrate processing apparatus according to the present invention may further include a pressure adjusting device having a suction conduit whose one end is opened in the gap and a suction mechanism connected to the suction conduit. Good.

  Furthermore, in the substrate processing apparatus according to the present invention, the protruding member includes a support portion that comes into contact with the peripheral edge portion of the substrate from below, and extends further upward than the support portion, and extends laterally from the peripheral edge portion of the substrate. And a restricting portion that comes to be positioned at the position.

  The substrate processing method according to the present invention is a substrate processing method for processing while rotating the substrate so that the plate surface of the substrate is in the horizontal direction, and the protruding member of the table having a plurality of protruding members protruding upward A supporting step of supporting the substrate by placing a substrate thereon and forming a gap between the substrate and the table; and a processing step of processing the substrate while rotating the substrate. And a pressure measurement pipe having one end opened in the gap and a pressure sensor connected to the pressure measurement pipe during the processing step, and based on a pressure measured by a pressure monitoring device. The state of the substrate is confirmed.

  In the substrate processing method according to the present invention, during the supporting step, the gap is formed by a pressure adjusting device having a suction pipe having one end opened in the gap and a suction mechanism connected to the suction pipe. And the state of the substrate may be confirmed based on the pressure measured by the pressure monitoring device.

  Further, in the substrate processing method according to the present invention, the confirmation of the state of the substrate may be performed when the pressure measured by the pressure monitoring device exceeds a predetermined value determined based at least on the rotation speed of the substrate at the time of measurement or If it is equal to or greater than the predetermined value, it may be determined that there is an abnormality.

  The program according to the present invention is a program executed by a control device that controls the substrate processing apparatus, and is rotated by the control device so that the substrate surface is rotated along the horizontal direction. A substrate processing method for processing while placing a substrate on the projecting member of a table having a plurality of projecting members projecting upward, and forming a gap between the substrate and the table A pressure measuring conduit having one end opened in the gap during the processing step, and a supporting step for supporting the substrate, and a processing step for processing the substrate while rotating the substrate, A substrate processing method for processing a substrate to be processed, wherein a state of the substrate is confirmed based on a pressure measured by a pressure monitoring device having a pressure sensor connected to a pressure measuring line; And characterized in that implemented in location.

  The recording medium according to the present invention is a recording medium on which a program executed by a control device that controls the substrate processing apparatus is recorded, and the board surface of the substrate is horizontally oriented when the program is executed by the control device. A substrate processing method for processing the substrate while rotating the substrate along the substrate, wherein the substrate is placed on the projecting member of a table having a plurality of projecting members projecting upward, and the substrate and the table A support step for supporting the substrate so as to form a gap therebetween, and a treatment step for treating the substrate while rotating the substrate, and one end of the gap is opened in the gap during the treatment step. The state of the substrate is confirmed based on a pressure measured by a pressure monitoring device having a pressure measurement pipe line and a pressure sensor connected to the pressure measurement pipe line. , Characterized in that for carrying out the processing method of the substrate in the substrate processing apparatus.

BEST MODE FOR CARRYING OUT THE INVENTION

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.

  1 to 4 are diagrams for explaining an embodiment of the present invention. 1 is a longitudinal sectional view showing the substrate processing apparatus, FIG. 2 is a top view showing the substrate processing apparatus, FIG. 3 is a diagram for explaining the operation of the substrate processing apparatus, and FIG. It is a flowchart for demonstrating a processing method. FIG. 1 shows a cross section taken along line II in FIG.

  In the following embodiments, an example in which the substrate processing apparatus and the substrate processing method according to the present invention are applied to cleaning a thin semiconductor wafer (an example of a substrate to be processed) whose outer contour is substantially circular. Show. However, as a matter of course, the substrate processing apparatus and the substrate processing method according to the present invention are not limited to application to wafer cleaning.

  As shown in FIGS. 1 to 3, the substrate processing apparatus 10 is an apparatus that performs processing while rotating the substrate so that the plate surfaces (upper surface and lower surface) of the wafer W are in the horizontal direction. A disk-shaped table 15 is provided that supports the wafer W in a rotatable manner so as to form a gap (gap) G therebetween. In FIG. 2, the wafer W is indicated by a two-dot chain line.

  As shown in FIGS. 1 to 3, in other words, the table 15 includes a base plate 20 in which an opening (through hole) 20 a is formed in a portion facing the central portion Wa of the wafer W, and an opening of the base plate 20. And an elevating plate 25 disposed in the portion 20a. The elevating plate 25 is located at the center of the disk-shaped table 15 and faces the center Wa of the wafer W. The base plate 20 faces the outer portion Wb other than the central portion Wa of the wafer W.

  The base plate 20 includes a plate member 24 and a plurality of protruding members 22 provided on the upper surface 24 a of the plate member 24. In the example shown in FIG. 2, three protruding members 22 are arranged on the circumference centered on the center of the disk-shaped table 15 at substantially equal intervals. The protruding member 22 that protrudes upward from the plate member 24 of the base plate 20 includes a support portion 22a that comes into contact with the wafer W from below at the periphery of the wafer W, and a restriction portion that extends further upward than the support portion 22a. 22b. The support portion 22a comes into contact with the wafer W from below, so that the wafer W can be supported on the base plate 20 (table 15). The height h of the support portion 22a can be set to, for example, about 1 mm to 10 mm. In this case, the pressure fluctuation in the gap G can be easily generated as described later. Further, as shown in FIG. 2, the restricting portion 22 b is disposed horizontally outward from the support portion 22 a, and as shown in FIGS. 1 and 3, the peripheral edge of the wafer W placed on the support portion 22 a. It comes to be located outside the horizontal direction of the part. For this reason, the restricting portion 22b can restrict the movement of the wafer W placed on the support portion 22a in the horizontal direction.

  The elevating plate 25 has a main body portion 29 having an upper surface that is inclined downward toward the center of the disk-shaped table 15, and lift pins 27 that are provided on the peripheral edge of the main body portion 29 and project upward. is doing. In the example shown in FIG. 2, three lift pins 27 are arranged at substantially equal intervals on the circumference centered on the center of the disk-shaped table 15.

  As shown in FIG. 1, the substrate processing apparatus 10 includes a rotary shaft member 30 that is fixedly connected to the lower surface of the base plate 20 and extends in the vertical direction, and a rotary drive mechanism 35 that is connected to the rotary shaft member 30 and rotationally drives the rotary shaft member 30. And further. As shown in the figure, the rotary shaft member 30 is formed in a cylindrical shape, and the hollow portion 30 a of the rotary shaft member 30 communicates with the opening 20 a of the base plate 20. The rotary shaft member 30 is held by a bearing 32 so as to be rotatable about an axis extending in the vertical direction. The rotation drive mechanism 35 includes a pulley 37 fixed to the rotation shaft member 30 from the outside, and a drive member (for example, a motor) 36 that applies a drive force to the pulley 37 via a drive belt 38. .

  As shown in FIG. 1, the substrate processing apparatus 10 includes a lifting shaft member 40 that is fixedly connected to the lower surface of the lifting plate 25 and extends in the vertical direction, and a lift that is connected to the lifting shaft member 40 and drives the lifting shaft member 40 to move up and down. And a drive mechanism 42. The elevating shaft member 40 extends in the hollow portion 30 a of the cylindrical rotating shaft member 30 so as to be slidable with respect to the rotating shaft member 30. Due to the lifting drive by the lifting drive mechanism 42, the lifting plate 25 is located within the opening 20a of the base plate 20 indicated by a two-dot chain line in FIG. 3 and above the base plate 20 indicated by a solid line in FIG. It is possible to move vertically between the positions.

  Further, as shown in FIG. 1, the substrate processing apparatus 10 includes a pressure monitoring device 50 capable of measuring the pressure in the gap G between the wafer W placed on the table 15 and the table 15, and a table 15. A pressure adjusting device 55 capable of adjusting the pressure of the gap G between the mounted wafer W and the table 15.

  The pressure monitoring device 50 includes a pressure measurement pipe 51 having one end opened in the gap G at a position facing the central portion Wa of the wafer W, and a pressure sensor 53 connected to the other end of the pressure measurement pipe 51. And. Here, only the both ends of the pressure measurement pipeline 51 are opened. Therefore, no airflow is substantially formed in the pressure measurement pipe 51 whose other end is substantially blocked by the pressure sensor 53. For this reason, the pressure sensor 53 can accurately measure the pressure in the region where one end of the pressure measurement pipe 51 is open, even though the pressure sensor 53 is disposed at a position away from the region. . As shown in FIG. 1, the pressure measuring pipe 51 extends through the elevating shaft member 56, and further passes through a portion of the elevating plate 25 that faces the central portion Wa of the wafer W. As a result, one end of the pressure measurement pipe 51 is opened to a portion of the gap G formed between the table 15 and the wafer W and located between the lift plate 25 and the wafer W. Become.

  On the other hand, the pressure adjusting device 55 includes a suction conduit 56 having one end opened in the gap G at a position facing the central portion Wa of the wafer W, and a suction mechanism 58 connected to the other end of the suction conduit 56. And. Here, only the both ends of the suction conduit 56 are opened. Therefore, the suction mechanism 58 can suck the atmosphere in the region where one end of the suction conduit 56 is opened, and can adjust the pressure in the region. As shown in FIG. 1, the suction pipe 56 extends through the elevating shaft member 56, and further passes through a portion of the elevating plate 25 that faces the central portion Wa of the wafer W. As a result, one end of the suction conduit 56 is opened to a portion of the gap G formed between the table 15 and the wafer W and located between the lift plate 25 and the wafer W. .

  Further, as shown in FIG. 2, in addition to the pressure measurement pipe 51 and the suction pipe 56, a gas supply pipe 45 and a processing liquid supply pipe 47 penetrate the elevating plate 25. One end of the gas supply line 45 and one end of the processing liquid supply line 47 are also located at a position facing the central portion Wa of the wafer W, similarly to one end of the pressure measurement line 51 and one end of the suction line 56. The gap G between W and the table 15 is open. The gas supply line 45 and the treatment liquid supply line 47 pass through the elevating shaft member 40, as with the pressure measurement line 51 and the suction line 56.

  The processing liquid supply pipe 47 is connected to a chemical liquid source for supplying a chemical liquid, a rinse liquid source for supplying a rinse liquid, a dry liquid source for supplying a dry liquid, and the like through a switching valve and the like.

  On the other hand, the gas supply line 45 is connected to a gas source that supplies an inert gas such as nitrogen gas. The tip (upper end) opened to the gap G of the gas supply pipe 45 is arranged at a position higher than the upper ends of the pressure measurement pipe 51, the suction pipe 56 and the processing liquid supply pipe 47. The front end (upper end) of the gas supply pipe 45 is disposed in the vicinity of the lower surface (back surface) of the wafer W placed on the base plate 20 and is formed to be tapered. For this reason, the gas supplied from the gas supply line 45 is supplied to the lower surface of the wafer W before the flow velocity decreases, that is, at a high speed.

  Further, as shown in FIG. 1, above the table 15, the surface side processing liquid supply unit 12 that supplies the processing liquid to the upper surface (surface) of the wafer W supported on the base plate 20 of the table 15 and the gas are provided. The surface side gas supply part 13 to supply is provided. The front side processing liquid supply unit 12 and the front side gas supply unit 13 are supported by a movable arm 11 that can move above the wafer W supported by the base plate 20. For example, as shown in FIG. 2, the moving arm 11 is configured to be swingable, and the surface-side processing liquid supply unit 12 and the surface-side gas supply unit 13 face the center of the wafer W from above (FIG. 2). 2), a position facing the peripheral edge of the wafer W from above, a position shifted outward from above the wafer W (solid line in FIG. 2), and the like. The surface side treatment liquid supply unit 12 is connected to a chemical liquid source for supplying a chemical liquid, a rinse liquid source for supplying a rinse liquid, a dry liquid source for supplying a dry liquid, and the like through a switching valve and the like. The surface side gas supply unit 13 is connected to a gas source that supplies an inert gas such as nitrogen gas.

  In addition, as a chemical | medical solution supplied from the process liquid supply pipe 47 and the surface side process liquid supply part 12, a dilute hydrofluoric acid, ammonia hydrogen peroxide (SC1), hydrochloric acid hydrogen peroxide (SC2) etc. can be used, for example. Further, water, particularly pure water (DIW), may be supplied as the rinse liquid from the processing liquid supply pipe 47 and the surface side processing liquid supply unit 12. Further, isopropyl alcohol (IPA) may be supplied as a drying liquid from the processing liquid supply pipe 47 and the surface side processing liquid supply unit 12.

  By the way, as shown in FIG. 1, the substrate processing apparatus 10 further includes a control device 60 that is connected to the above components and controls the components. Specifically, the control device 60 is connected to the rotation drive mechanism 35, the elevation drive mechanism 42, the pressure monitoring device 50, the pressure adjustment device 55, and the valves, and controls the operation of these devices. .

  In particular, the control device 60 according to the present embodiment is based on the pressure in the gap G measured by the pressure monitoring device 50, for example, whether or not the wafer W is placed, whether the wafer W is normal. It is configured so that it can be confirmed whether or not the wafer W is normally held. More specifically, the control device 60 determines whether or not the pressure measured by the pressure monitoring device 50 is rotating the wafer W at the time of measurement, and if it is rotated, the rotational speed ( If the unit exceeds a predetermined value determined based on at least, for example, rpm) or is equal to or greater than the predetermined value, the wafer W is not arranged or the wafer W is not normally supported or held. It is configured to determine that there is an abnormality related to the state of the wafer W.

  The control device 60 according to the present embodiment controls the suction by the pressure adjusting device 55 based on at least the rotation speed of the base plate 20 driven by the rotation drive mechanism 35 when the base plate 20 is driven to rotate. It is configured. More specifically, the control device 60 adjusts the pressure when the rotation speed of the base plate 20 driven by the rotation drive mechanism 35 is equal to or lower than a preset rotation speed or less than the preset rotation speed. The device 55 is configured to perform suction.

  The control device 60 includes an input keyboard including a keyboard used by a process manager or the like to input commands for managing the substrate processing apparatus 10, a display that visualizes and displays the operating status of the substrate processing apparatus 10, and the like. An output device is connected. Further, the control device 60 can access a recording medium 62 in which a program for realizing processing executed by the substrate processing apparatus 10 is recorded. The recording medium 62 may be a known program recording medium such as a memory such as a ROM and a RAM, a disk-shaped recording medium such as a hard disk, a CD-ROM, a DVD-ROM, and a flexible disk.

  Next, an example of a substrate processing method that can be executed using the substrate processing apparatus 10 configured as described above will be described with reference mainly to a flowchart shown in FIG. The operation of each component for executing the substrate processing method described below is controlled by a control signal from the control device 60 based on a program stored in the program recording medium 62 in advance.

  First, a wafer W to be processed is placed on the protruding member 22 of the table 15 and the wafer W is supported on the table 15 so as to form a gap G between the wafer W and the table 15 (S1). . Specifically, as shown in FIG. 3, the wafer W to be processed is brought above the table 15 by the transfer device 65. At this time, the wafer W is supported on the transfer arm 66 of the transfer device 65. Next, the lift plate 25 is raised by driving the lift drive mechanism 42 (S11). The ascending / descending plate 25 receives the wafer W from the transfer arm 66 of the transfer device 65, and supports the wafer W from below by the lift pins 27 (S12). The transfer arm 66 of the transfer device 65 transfers the wafer W to the elevating plate 25, moves outward in the horizontal direction, and retracts from the area above the table 15. Thereafter, the lift plate 25 is lowered by driving the lift drive mechanism 42 (S13). As shown in FIG. 1, the tip of the lift pin 27 of the lift plate 25 is disposed at a position lower than the tip of the protruding member 22 of the base plate 20 in a state where the lift plate 25 is lowered. Accordingly, the wafer W supported on the lift pins 27 of the lift plate 25 is supported on the protrusion member 22 of the protrusion member 22 of the base plate 20 while the lift plate 25 is lowered. In this way, the wafer W is supported on the table 15 with a gap G between the wafer W and the table 15.

  In the present embodiment, the table 15 is composed of a rotatable base plate 20 and an elevating plate 25 that can be raised and lowered. Then, the wafer W can be transferred to and from the transfer device 65 on the lift plate 25 raised from the base plate 20. According to the present embodiment, the protruding member is supported without considering the thickness t2 (see FIG. 3) of the transfer arm 65 that supports the wafer W from below and transfers the wafer W to above the table 15. The protrusion height h of 22 can be set appropriately. Therefore, the protrusion height h of the protrusion member 22 is made thinner than the thickness t2 (see FIG. 3) of the transfer arm 65, and thereby the gap G between the wafer W supported on the protrusion member 22 and the table 15 is set. Thickness t1 (see FIG. 3) can be sufficiently reduced. As a result, it is possible to easily cause pressure fluctuations in the gap G described later.

  Next, the wafer W placed on the table 15 is held on the table (S2). Here, “holding” means not only the action of gravity caused only by placing (supporting from below) but also the action of keeping the wafer W on the table 15 positively. It means to affect. Specifically, the pressure adjustment device 55 sucks the atmosphere in the gap G formed between the wafer W and the table 15. As can be understood from FIGS. 1 and 2, the periphery of the gap G is open. However, as described above, the thickness t1 of the gap G between the upper surface 24a of the plate member 24 of the base plate 20 constituting the periphery of the gap G and the lower surface of the wafer W can be set sufficiently thin. Therefore, by appropriately adjusting the output of the suction mechanism 58 of the pressure adjusting device 55, the pressure in the gap G below the wafer W can be lowered than the pressure above the wafer W supported on the table 15. It becomes. That is, a negative pressure is generated in the gap G, and the wafer W can be sucked and held toward the table 15.

  During this step S 2, the pressure monitoring device 50 monitors the pressure in the gap G, more strictly, the fluctuation of the pressure in the gap G in the vicinity of one end of the pressure measurement pipe 51. As described above, when the wafer W is normally supported by the support portion 22a of the protruding member 22, the thickness t1 of the gap G is sufficiently thin, and the pressure in the gap G is reduced by the suction by the pressure adjusting device 55. Can be made. The behavior of pressure fluctuation in the gap G at this time is investigated in advance and recorded in advance in the control device 60 or the recording device 62.

  On the other hand, when the wafer W is not normally supported by the support portion 22 a of the protruding member 22, the behavior of the pressure fluctuation in the gap G due to the suction of the pressure adjusting device 55 is normally supported by the wafer. The behavior in the case becomes different. In many cases, since the wafer W is not normally supported, the thickness t1 of the gap G is increased at least at a part of the peripheral edge of the wafer W, and the pressure decrease rate is slow or the pressure does not decrease. .

  Then, the control device 60 compares the change in pressure measured by the pressure monitoring device 50 with the behavior of normal pressure fluctuation recorded in advance during step S2 of holding the wafer W by suction. As a result, it is possible to accurately check the state of the wafer W, that is, whether or not the wafer W is accurately placed at a predetermined position and is normally supported. If it is determined that the wafer W is not normally supported, the processing for the wafer W is stopped. On the other hand, it is confirmed that the wafer W is normally supported, and further, it is confirmed that the pressure in the gap G measured by the pressure monitoring device 50 has dropped below the predetermined pressure or below the predetermined pressure. If so, the next step S3 is executed.

  When the wafer W is held on the table 15 by suction, the base plate 20 is rotationally driven together with the wafer W by the rotational drive mechanism 35. The rotation drive mechanism 35 accelerates the rotation of the base plate 20 until the rotation speed of the base plate 20 (rotation speed of the wafer W) reaches a preset rotation speed (here, the first rotation speed) (S3). . The rotational speeds of the base plate 20 and the wafer W are measured by a rotational speed meter (not shown) connected to the control device 60. And the control apparatus 60 is monitoring the rotational speed measured with a tachometer.

  During the acceleration step S3, suction of the atmosphere in the gap G by the pressure adjusting device 55 is continuously performed. While the rotational speed of the wafer W is accelerated, abnormalities such as flapping (bounce) of the wafer W on the protruding member 22 and slipping (displacement) of the wafer W on the protruding member 22 are likely to occur. However, according to the present embodiment, the pressure in the gap G between the central portion Wa of the wafer W and the table 15 is sufficiently reduced during the acceleration step S3 in which the rotational speed of the wafer W is accelerated, and abnormal It is possible to stably hold the wafer W on the table 15 during the acceleration step S3 that is likely to occur.

  In addition, during the acceleration process S3, the pressure monitoring device 50 continuously monitors the pressure in the gap G. When the wafer W and the base plate 20 are rotated, the atmosphere in the gap G (due to the propulsion by the unevenness (for example, the protruding member 22) on the base plate 20, friction with the upper surface of the base plate 20 or the lower surface of the wafer W, etc. The gas) is also rotated about the rotation axis of the base plate 20, and as a result, a centrifugal force acts on the atmosphere (gas). That is, the gas in the gap G moves relative to the substrate W and the rotating table 15 radially outward from the rotation axis. Thereby, the pressure in the gap G between the wafer W and the table 15 becomes lower than the pressure above the wafer W. In particular, the pressure in the gap G at the position facing the central portion Wa of the wafer W is the lowest. Further, the higher the rotational speed of the wafer W and the base plate 20, the lower the pressure in the gap G. Further, as the thickness t1 of the gap G between the table 15 and the wafer W is thinner, the centrifugal force works more effectively on the gas in the gap G, and the pressure drop in the gap G becomes more remarkable.

  Accordingly, when the wafer W is normally placed on the table 15 in the support step S1 and is normally held in the subsequent acceleration step S3, the thickness t1 of the gap G between the table 15 and the wafer W is set. As a result, the pressure in the gap G gradually decreases as the rotation speed increases. The behavior of normal pressure fluctuations in the gap G at this time is investigated in advance and recorded in advance in the control device 60 or the recording device 62.

  On the other hand, when the wafer W is not normally held on the table 15 of the protruding member 22, the behavior of the pressure fluctuation in the gap G due to the suction of the pressure adjusting device 55 is similar to that in the holding step S2. It becomes different from the behavior when is normally supported. In many cases, since the wafer W is not normally supported, the thickness t1 of the gap G becomes thick at least at a part of the peripheral portion of the wafer W, and the pressure is difficult to decrease, or the pressure does not decrease.

  Then, the control device 60 compares the change in pressure measured by the pressure monitoring device 50 with the behavior of normal pressure fluctuation recorded in advance during step S3 of accelerating the rotation speed. More specifically, the control device 60 monitors the pressure measured by the pressure monitoring device 50 during the acceleration step S3, and the pressure measured by the pressure monitoring device 50 becomes the rotational speed of the wafer W at the time of measurement. It is determined that there is an abnormality when it exceeds a predetermined value (a value set based on a pre-recorded normal pressure value) that is determined based on at least the predetermined value or more. In this way, it is possible to accurately check the state of the wafer W, that is, whether or not the wafer W is normally held on the table 15. When it is determined that the wafer W is not normally held, the processing for the wafer W is stopped.

  On the other hand, since the pressure in the gap G decreases normally, it is confirmed that the wafer W is normally held, and the rotation speeds of the base plate 20 and the wafer W are set to a predetermined rotation speed (the first rotation speed). When the speed reaches 1 rotation speed), the next step S4 is executed.

  Note that when the rotation speeds of the base plate 20 and the wafer W reach the first rotation speed, the suction by the pressure adjusting device 55 is stopped. In other words, the control device 60 stops the suction by the pressure adjusting device 55 when the rotation speed of the base plate 20 driven by the rotation drive mechanism 35 becomes equal to or higher than the first rotation speed or exceeds the first rotation speed. However, even if the suction by the pressure adjusting device 55 is stopped, the rotation speeds of the base plate 20 and the wafer W are sufficiently high. For this reason, a sufficient negative pressure is formed in the gap G, and the wafer W can be stably kept rotating on the table.

  Next, a processing step S4 for processing the wafer W while rotating the wafer W is performed. In the present embodiment, the processing step S4 includes a chemical processing step S41 for cleaning the wafer W with a chemical solution, a rinsing processing step S42 for rinsing the chemical-treated wafer W with a rinsing liquid (pure water), and the wafer W. And a drying process step S43 for drying.

  In the chemical processing step S41, chemicals are supplied to the upper surface (front surface) and the lower surface (back surface) of the wafer W from the surface side processing liquid supply unit 12 and the processing liquid supply conduit 47, and the upper surface (front surface) and the lower surface (back surface) of the wafer W are supplied. ) Are processed simultaneously. During the chemical processing step S41, the base plate 20 and the wafer W are continuously rotated at the first rotation speed (for example, 500 rpm) by the rotation drive by the rotation drive mechanism 35.

  Next, in the rinsing process S42, the rinsing liquid is supplied to the upper surface (front surface) and the lower surface (back surface) of the wafer W from the front surface side processing liquid supply unit 12 and the processing liquid supply conduit 47, and the upper surface (front surface) of the wafer W. And the lower surface (back surface) is rinsed at the same time. During the chemical solution processing step S42, the base plate 20 and the wafer W are continuously rotated at a second rotation speed (for example, 1000 rpm) faster than the first rotation speed by the rotation drive by the rotation drive mechanism 35.

  Thereafter, the drying process step S43 is performed. As an example, the drying processing step S43 may include a replacement step and a shake-off drying step. In the replacement step, the drying liquid is supplied from the surface side processing liquid supply unit 12 and the processing liquid supply pipe 47, and the rinsing liquid (pure water) remaining on the upper and lower surfaces of the wafer W is replaced with the drying liquid. During the replacement process, the base plate 20 and the wafer W are continuously rotated at a third rotation speed (for example, 700 rpm) faster than the first rotation speed. Further, in the shake-off drying process, the inert gas is supplied from the surface side gas supply unit 13 and the gas supply line 45 while rotating the base plate 20 and the wafer W at a fourth rotation speed (for example, 1000 rpm) faster than the first rotation speed. The supplied liquid is blown off from the upper and lower surfaces of the wafer W.

  In the processing step S4, the suction of the atmosphere in the gap G by the pressure adjusting device 55 is stopped while the wafer W is rotated at a constant speed. However, during the processing step S4, the wafer W rotates at a rotation speed that is not less than the first rotation speed that is relatively high. Therefore, a sufficient negative pressure is formed in the gap G, and the wafer W can be stably held on the table 15 during the processing step S4.

  Further, during the processing step S4, the pressure monitoring device 50 continuously monitors the pressure in the gap G. When the wafer W and the base plate 20 are rotated at a substantially constant speed, the pressure in the gap G takes a substantially constant value. Then, the pressure in the gap G when rotating at the first to fourth rotation speeds is examined in advance and recorded in advance in the control device 60 or the recording device 62.

  However, when the wafer W is not normally held on the table 15 of the protruding member 22, the thickness t1 of the gap G formed between the wafer W and the table 15 varies, and this variation in the thickness t1 is caused. Along with this, the pressure in the gap G also fluctuates. Then, the control device 60 monitors the pressure measured by the pressure monitoring device 50 during the processing step S4, and confirms whether or not the holding state of the wafer W is abnormal based on a measurement device of a tachometer (not shown). More specifically, the pressure measured by the pressure monitoring device 50 is set based on a predetermined value (based on a normal pressure value recorded in advance) determined based at least on the rotation speed of the wafer W at the time of measurement. If the value exceeds or exceeds the predetermined value, it is determined that there is an abnormality. In such a case, an abnormality occurs such that the wafer W flutters (bounces) on the table 15 or the wafer W comes off the table 15, and the thickness t 1 of the gap G formed between the wafer W and the table 15. This is because it is estimated that has become large. As a result, it is possible to accurately check the state of the wafer W, that is, whether or not the wafer W is normally held on the table 15. If it is determined that the holding state of the wafer W is not normal, the processing for the wafer W is stopped. When it is determined that the wafer W has been processed in a normally held state, the next step S5 is executed.

  Next, the rotational speeds of the base plate 20 and the wafer W that have been rotated at the fourth rotational speed are decelerated (S5). During the deceleration step S5, the atmosphere in the gap G is sucked by the pressure adjusting device 55. That is, when the rotation speed of the base plate 20 driven by the rotation drive mechanism 35 becomes equal to or lower than the fourth rotation speed or less than the fourth rotation speed, the control device 60 performs suction by the pressure adjusting device 55. For this reason, the rotational speeds of the base plate 20 and the wafer W are lowered, and even if the formation of the negative pressure in the gap G due to the rotation of the base plate 20 and the wafer W is insufficient, it is caused by the suction by the pressure adjusting device 55. Thus, a sufficient negative pressure is formed in the gap G. As a result, the wafer W is placed on the table 15 during the deceleration step S5 in which abnormalities such as flapping (bounce) on the protruding member 22 of the wafer W and slipping (displacement) on the protruding member 22 of the wafer W easily occur. It becomes possible to keep holding stably.

  Further, during the deceleration step S5, the pressure monitoring device 50 continuously monitors the pressure in the gap G. When the wafer W continues to be normally held in the deceleration step S5, the pressure in the gap G gradually decreases as the rotation speed decreases. The behavior of pressure fluctuation in the gap G at this time is investigated in advance and recorded in advance in the control device 60 or the recording device 62. Then, the control device 60 compares the pressure change measured by the pressure monitoring device 50 with the behavior of normal pressure fluctuation recorded in advance during the step S5 of decelerating the rotational speed. As a result, it is possible to accurately check the state of the wafer W, that is, whether or not the wafer W is normally held on the table 15.

  When the rotation of the base plate 20 and the wafer W is stopped, the suction by the pressure adjusting device 55 is stopped, and the deceleration step S5 is completed.

  Thereafter, the processed wafer W is discharged (S6). In the discharging step S6, first, the elevating plate 25 is raised (S61). When the elevating plate 25 moves up, the processed wafer W supported on the protruding member 22 of the base plate 20 is transferred onto the lift pins 27 of the elevating plate 25. When the elevating plate 25 supporting the wafer W rises to a predetermined position, the wafer W is transferred from the elevating plate 25 to the transfer arm 66 of the transfer device 65 (S62).

  In this way, a series of processes for the wafer W is completed. Further, the wafer W to be processed next is brought in by the transfer device 65, and the wafer W is subjected to the same processing as described above.

  According to the present embodiment as described above, the gap (gap) between the wafer W and the table 15 at the position facing the central portion Wa of the wafer W (a thin plate-like substrate having a circular outer contour). G is provided with a pressure monitoring device 50 having a pressure measuring pipe 51 whose one end is opened and a pressure sensor 53 connected to the other end of the pressure measuring pipe 51. By using such a pressure monitoring device 50, it is possible to confirm a change in the pressure of the gap G between the central portion Wa of the wafer W and the table 15 while the wafer W is rotating. By the extremely simple action of monitoring this pressure, the state of the wafer on the table 15, for example, whether the wafer W is brought on the table 15, and whether the support position of the wafer W is normal or not. It is possible to easily and accurately confirm whether or not the holding state of the wafer W is normal.

  In addition, by monitoring the pressure of the gap G between the central portion Wa of the wafer W and the table 15 during the acceleration process for accelerating the rotation speed of the wafer W, the wafer during the acceleration or deceleration process that is likely to cause an abnormality. The state of W can be confirmed easily and accurately. Accordingly, the wafer W is likely to occur because of the thin plate shape, and is likely to occur because the wafer W flutters (bounces) on the table 15 during the acceleration or deceleration process, and the wafer W has a substantially circular outer contour. It can be easily and accurately confirmed that the holding position (supporting position) of the wafer W is displaced due to slippage (displacement) of the wafer W with respect to the table 15 during the acceleration or deceleration process.

  Further, according to the present embodiment, the wafer W can be delivered on the elevating plate 25 raised from the base plate 20. In this case, the protruding height h of the protruding member 22 can be set without considering the thickness t2 of the transfer arm 66 that transfers the wafer W to the upper side of the table 15. Therefore, the protrusion height h of the protrusion member 22 can be set appropriately, and the thickness t1 of the gap G between the wafer W supported on the protrusion member 22 and the table 15 can be sufficiently reduced. As a result, a change in the pressure of the gap G between the central portion Wa of the wafer W and the table 15 is likely to occur. Thereby, the state of the wafer W can be confirmed more accurately.

  Furthermore, according to the present embodiment, at the position facing the central portion Wa of the wafer W, the suction pipe 56 whose one end is opened to the gap G, and the suction connected to the other end of the suction pipe 56. A pressure regulator 55 having a mechanism 58 is further provided. By using such a pressure adjusting device 55, it is possible to easily cause a pressure fluctuation of the gap G between the center portion Wa of the wafer W arranged at a normal position and the table 15. Thereby, it can be confirmed more accurately whether or not the wafer W is placed at a normal position on the table 15.

  Note that various modifications can be made to the above-described embodiment. Hereinafter, an example of modification will be described.

  For example, in the above-described embodiment, the example in which the wafer W is held on the table 15 by the suction of the atmosphere in the gap G by the pressure adjusting device 55 has been described. The wafer W may be held on the table 15 so as to form a gap G with the table 15. As an example, a mechanical chuck mechanism that mechanically holds the wafer W on the table (mechanical chuck) may be provided on the table 15, and the wafer W may be mechanically chucked and held on the protruding member 22. Even in such a case, the state of the wafer W can be easily and accurately confirmed based on the pressure of the gap G measured by the pressure monitoring device 50 as described above.

  In the above-described embodiment, the example in which the suction of the atmosphere in the gap G by the pressure adjusting device 55 is performed over the entire period of the acceleration step S3 and the deceleration step S5 has been described, but the present invention is not limited thereto. The suction by the pressure adjusting device 55 may be performed only during a partial period during the acceleration step S3 or only during a partial period during the deceleration step S5. As an example, while the rotation speed of the wafer W (base plate 20) is equal to or higher than a predetermined rotation speed (for example, 400 rpm), or while the predetermined rotation speed is exceeded, the suction by the pressure adjusting device 55 is performed. It may be stopped. In such control, suction by the pressure adjusting device 55 is performed in a certain period including the start time in the acceleration step S3 and in a certain period including the end time in the deceleration step S5.

  Furthermore, in the above-described embodiment, the example in which the suction by the pressure adjusting device 55 is stopped over the entire period in the processing step S4 is shown, but the present invention is not limited to this. For example, suction by the pressure adjusting device 55 may be performed during the chemical processing step S41 in which the rotation speed of the wafer W (base plate 20) tends to be relatively low. Thereby, the wafer W can be held more stably.

  Further, in the above-described embodiment, an example in which suction by the pressure adjusting device 55 is not performed during the support step S1 is shown, but the present invention is not limited to this, and in particular, the lifting plate 25 that supports the wafer W during the support step S1. During the descent, suction by the pressure adjusting device 55 may be performed. In this case, the wafer W can be guided by suction by the pressure adjusting device 55 so that the wafer W is accurately placed at a predetermined position. In addition, during the supporting step S1, suction by the pressure adjusting device 55 is performed, and whether the wafer W is placed at a predetermined position based on a change in pressure before and after placing the wafer W measured by the pressure monitoring device 50. You may make it confirm whether or not. When the wafer W is placed on the table 15 while performing suction by the pressure adjusting device 55, the wafer W is accurately placed at a predetermined position on the table 15, and a predetermined amount is placed between the wafer W and the table 15. When the thin gap G is formed, the pressure in the gap G greatly fluctuates before and after the wafer W is placed. Therefore, based on the change in pressure measured by the pressure monitoring device 50, it can be easily and accurately confirmed whether or not the wafer W is accurately supported at a predetermined position on the table 15.

  Further, in the above-described embodiment, an example in which the control device 60 controls the presence or absence of suction by the pressure adjustment device 55 based on the rotation speed of the base plate 20 has been described, but the present invention is not limited thereto. For example, the control device 60 may control the presence or absence of suction by the pressure adjusting device 55 based on the pressure in the gap G. Specifically, when the pressure in the gap G exceeds a preset pressure or when it is equal to or higher than the preset pressure, the control device 60 may perform suction by the pressure adjusting device 55. Good.

  Furthermore, in the above-described embodiment, the example in which the table 15 includes the base plate 20 and the elevating plate 25 is shown, but the present invention is not limited to this. For example, when a transfer method is adopted in which a gap is taken to reduce the pressure in the gap G to a pressure at which the wafer W can be sucked and held on the table 15, the table 15 may be formed of a disk-shaped base plate. In this example, the pressure measurement pipe 51 extends through the rotary shaft member 30 and further passes through a portion of the disk-shaped base plate that faces the central portion Wa of the wafer W to measure the pressure. One end of the working pipe 51 may be opened to a gap G located between the disc-shaped base plate and the central portion Wa of the wafer W.

  Furthermore, in the above-described embodiment, an example is shown in which the lifting plate 25 is configured to support the wafer W from below when it is lifted. However, the present invention is not limited to this. You may be comprised so that it may adsorb | suck.

  Further, in the above-described embodiment, the gap G is formed at a position where one end of the pressure measurement pipe 51 and one end of the suction pipe 56 face the central portion (center and surroundings) Wa of the wafer (substrate) W. Although the example opened is shown, it is not restricted to this, For example, you may open | release to the clearance gap G in the periphery of center part Wa other than center part Wa.

  In addition, although the some modification with respect to embodiment mentioned above was demonstrated above, naturally, it is also possible to apply combining several modifications suitably.

  In the above description, the substrate processing apparatus according to the present invention is applied to an apparatus for cleaning the wafer W. However, the present invention is not limited to this, and the cleaning process for the LCD substrate or the CD substrate is used. In addition, the present invention may be applied to a drying process, and may be applied to various processes other than a cleaning process.

FIG. 1 is a longitudinal sectional view showing a substrate processing apparatus for explaining an embodiment according to the present invention. FIG. 2 is a top view showing the substrate processing apparatus of FIG. FIG. 3 is a view for explaining the operation of the lifting plate of the substrate processing apparatus of FIG. FIG. 4 is a flowchart for explaining an example of a substrate processing method that can be implemented by the substrate processing apparatus of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 15 Table 20 Base plate 20a Opening part 22 Projection member 22a Support part 22b Restriction part 25 Lifting plate 30 Rotating shaft member 30a Hollow part 35 Rotation drive mechanism 40 Lifting shaft member 42 Lifting drive mechanism 50 Pressure monitoring device 51 For pressure measurement Pipe 53 Pressure sensor 55 Pressure adjusting device 56 Suction conduit 58 Suction mechanism 60 Control device 62 Recording means (storage means)
W substrate (semiconductor wafer)
G Gap (void)

Claims (12)

A substrate processing apparatus for processing while rotating the substrate so that the plate surface of the substrate is along the horizontal direction,
A table including a rotatable base plate having a plurality of projecting members projecting upward, wherein the projecting member contacts the substrate from below to form a gap between the substrate and the table. A table that can be rotated, and
A rotational drive mechanism for rotationally driving the base plate;
A pressure monitoring device having a pressure measuring line having one end opened in the gap, and a pressure sensor connected to the pressure measuring line ,
The substrate processing apparatus , wherein the gap extends from a position facing the one end of the pressure measurement pipe line to a peripheral edge of the substrate. A control device connected to the pressure monitoring device;
The substrate processing apparatus according to claim 1, wherein the control device is configured to check a state of the substrate based on a pressure in the gap measured by the pressure monitoring device. When the base plate is rotated, the control device is configured such that the pressure measured by the pressure monitoring device exceeds a predetermined value determined based on at least the rotation speed of the substrate at the time of measurement or the predetermined plate The substrate processing apparatus according to claim 2, wherein the substrate processing apparatus is configured to determine that there is an abnormality when the value is equal to or greater than the value. The base plate has an opening formed at a position facing the substrate, and the table further includes a lift plate disposed in the opening of the base plate,
The substrate processing apparatus is a rotating shaft member coupled to the base plate and coupled to the rotational driving mechanism so as to be rotationally driven, and having a hollow portion communicating with the opening of the base plate. A member, an elevating shaft member that extends in the hollow portion of the rotating shaft member so as to be slidable with respect to the rotating shaft member, is connected to the elevating plate, is connected to the elevating shaft member, and the elevating shaft member is An elevating drive mechanism for elevating and driving,
The pressure measuring pipe extends through the lifting shaft member, and one end of the pressure measuring pipe is opened to the gap located between the lifting plate and the substrate. The substrate processing apparatus according to any one of claims 1 to 3. A rotation shaft member coupled to the base plate and coupled to the rotational drive mechanism so as to be rotationally driven;
The pressure measurement conduit extends through the rotary shaft member, and one end of the pressure measurement conduit is opened in the gap located between the base plate and the substrate. The substrate processing apparatus as described in any one of Claims 1 thru | or 3. 6. The pressure adjusting device according to claim 1, further comprising a pressure adjusting device having a suction conduit having one end opened in the gap, and a suction mechanism connected to the suction conduit. The substrate processing apparatus according to item. The protruding member is a support part that comes into contact with the peripheral part of the substrate from below, and a restricting part that extends further upward than the support part and is located on the side of the peripheral part of the substrate, The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus includes: A substrate processing method of processing while rotating the substrate so that the plate surface of the substrate is along the horizontal direction,
A supporting step of placing a substrate on the projecting member of a table having a plurality of projecting members projecting upward and supporting the substrate so as to form a gap between the substrate and the table; A processing step of processing the substrate while rotating the substrate,
Based on the pressure measured by a pressure monitoring device having a pressure measurement pipe having one end opened in the gap and a pressure sensor connected to the pressure measurement pipe during the processing step, A substrate processing method comprising: checking a state of a substrate. During the supporting step, an atmosphere of the gap is sucked by a pressure adjusting device having a suction pipe having one end opened in the gap and a suction mechanism connected to the suction pipe; The substrate processing method according to claim 8, wherein the state of the substrate is confirmed based on a pressure measured by the pressure monitoring device. The confirmation of the state of the substrate is performed when the pressure measured by the pressure monitoring device exceeds a predetermined value determined based on at least the rotation speed of the substrate at the time of measurement or is equal to or higher than the predetermined value. 10. The substrate processing method according to claim 8, wherein it is determined that there is an abnormality. A program executed by a control device that controls the substrate processing apparatus,
By being executed by the control device,
A substrate processing method of processing while rotating the substrate so that the plate surface of the substrate is along the horizontal direction,
A supporting step of placing a substrate on the projecting member of a table having a plurality of projecting members projecting upward and supporting the substrate so as to form a gap between the substrate and the table; A processing step of processing the substrate while rotating the substrate,
Based on the pressure measured by a pressure monitoring device having a pressure measurement pipe having one end opened in the gap and a pressure sensor connected to the pressure measurement pipe during the processing step, A program for causing a substrate processing apparatus to execute a processing method of a substrate to be processed, for checking a state of the substrate. A recording medium on which a program executed by a control device that controls the substrate processing apparatus is recorded,
By executing the program by the control device,
A substrate processing method of processing while rotating the substrate so that the plate surface of the substrate is along the horizontal direction,
A supporting step of placing a substrate on the projecting member of a table having a plurality of projecting members projecting upward and supporting the substrate so as to form a gap between the substrate and the table; A processing step of processing the substrate while rotating the substrate,
Based on the pressure measured by a pressure monitoring device having a pressure measurement pipe having one end opened in the gap and a pressure sensor connected to the pressure measurement pipe during the processing step, A recording medium that causes a substrate processing apparatus to execute a processing method of a substrate to be processed for checking a state of the substrate.

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