KR102643412B1 - Substrate processing method - Google Patents

Abstract

[Task] Increase the freedom of etching profile.
[Solution] A substrate processing method includes a process of rotating a substrate, a process of discharging a first processing liquid to the center of the rotating substrate using a central nozzle, and a process of discharging the first processing liquid to the center of the rotating substrate on a plane. A process of discharging a second processing liquid using a peripheral nozzle is provided at a peripheral portion surrounding the substrate when viewed, wherein the peripheral nozzle performs the second processing along the forward direction of rotation of the substrate from a direction inclined with respect to the main surface of the substrate. The liquid is discharged, and the peripheral nozzle discharges the second processing liquid to the peripheral portion of the substrate after a position that extends semicircularly in the forward direction of rotation of the substrate from the line connecting the center of the substrate and the central nozzle in plan view.

Description

Substrate processing method {SUBSTRATE PROCESSING METHOD}

The technology disclosed in this specification relates to a substrate processing method. Substrates subject to processing include, for example, semiconductor substrates, substrates for liquid crystal displays, substrates for flat panel displays (FPD) such as organic EL (electroluminescence) displays, substrates for optical disks, substrates for magnetic disks, and magneto-optical substrates. These include disk substrates, photomask substrates, ceramic substrates, and solar cell substrates.

Conventionally, in the manufacturing process of semiconductor substrates (hereinafter simply referred to as “substrates”), various processes have been performed on the substrates using substrate processing equipment. The process includes an etching process to remove the upper surface of the substrate.

Japanese Patent No. 6064875 Publication

In the above etching process, there are requests for various etching profiles. For example, there are cases where an etching profile that offsets the unevenness of etching in the previous process is required.

In that case, it is conceivable to process the substrate while offsetting the unevenness of etching, for example, by performing etching processing with significantly different etching profiles at the center and peripheral portions of the substrate.

The technology disclosed in this specification was developed in consideration of the problems described above, and is a technology for increasing the degree of freedom of the etching profile in substrate processing.

A first aspect of the technology related to the substrate processing method disclosed in the present specification includes a process of rotating a substrate held in a substrate holding portion, and a first process using a central nozzle at the center of the rotating substrate. a process of discharging a liquid, and a process of discharging a second processing liquid using a peripheral nozzle to a peripheral portion surrounding the central portion of the rotating substrate when viewed in plan, wherein the peripheral nozzle is configured to: The second processing liquid is discharged along the forward direction of rotation of the substrate from a direction inclined with respect to the main surface of the substrate, and the peripheral nozzle extends from a line connecting the center of the substrate and the central nozzle in a plan view. The second processing liquid is discharged to the periphery of the substrate after a position that has advanced a semicircle in the forward direction of rotation of the substrate.

A second aspect of the technology disclosed in this specification includes a process of rotating a substrate held in a substrate holding unit, and a process of discharging a first processing liquid to the center of the rotating substrate using a central nozzle. a step of discharging a second processing liquid using a peripheral nozzle to a peripheral portion of the rotating substrate; and a liquid film width of the liquid film of the second processing liquid, which is a radial width of the peripheral portion of the substrate. and a step of controlling the rotation speed of the rotating substrate and the discharge amount of the second processing liquid from the peripheral nozzle based on the detected liquid film width, wherein the peripheral nozzle includes: The second processing liquid is discharged from a direction inclined with respect to the main surface of the substrate along the forward direction of rotation of the substrate.

In a third aspect of the technology disclosed in the present specification, in relation to the first or second aspect, the peripheral nozzle is configured to apply the second processing liquid after a liquid film of the first processing liquid is formed in the central portion of the substrate. Discharges.

A fourth aspect of the technology disclosed in the specification of the present application relates to any one of the first to third aspects, wherein the first treatment liquid and the second treatment liquid are different types of treatment liquid.

A fifth aspect of the technology disclosed in the present specification relates to any one of the first to fourth aspects, wherein the central nozzle is capable of swinging in the radial direction of the substrate.

According to the first to fifth aspects of the technology disclosed in the present specification, the degree of freedom of the etching profile in substrate processing can be increased.

In addition, the purpose, features, aspects, and advantages related to the technology disclosed in this specification will become more clear from the detailed description and accompanying drawings shown below.

1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus according to an embodiment.
FIG. 2 is a diagram conceptually showing an example of the configuration of a control device of a substrate processing apparatus.
FIG. 3 is a side view schematically showing an example of a processing unit and its related configuration in the substrate processing apparatus according to the embodiment.
Fig. 4 is a side view showing an example of the positional relationship between the peripheral nozzle and the substrate.
Fig. 5 is a plan view showing an example of the positional relationship between the central nozzle and the peripheral nozzle on the upper surface of the substrate.
FIG. 6 is a flowchart showing operations in a processing unit during operation of the substrate processing apparatus.
Fig. 7 is a plan view showing an example of the positional relationship between the central nozzle and the peripheral nozzle on the upper surface of the substrate.
Fig. 8 is a plan view showing an example of the positional relationship between the central nozzle and the peripheral nozzle on the upper surface of the substrate.
Fig. 9 is a plan view showing an example of the liquid film width of the processing liquid discharged from the peripheral nozzle.

Hereinafter, embodiments will be described with reference to the attached drawings. In the following embodiments, detailed features and the like are shown for description of the technology, but these are examples and not all of them are necessarily essential features for the embodiments to be implementable.

In addition, the drawings are schematically shown, and for convenience of explanation, structures are omitted or simplified in the drawings as appropriate. In addition, the interrelationships between the size and position of the configurations shown in the different drawings are not necessarily accurately described and may be changed as appropriate. Additionally, even in drawings such as plan views other than cross-sectional views, hatching may be added to facilitate understanding the content of the embodiments.

In addition, in the description shown below, the same components are indicated by the same symbols, and their names and functions are also assumed to be the same. Therefore, detailed descriptions of them may be omitted to avoid duplication.

In addition, in the description below, when a component is described as “comprising,” “includes,” or “has,” unless otherwise specified, it is an exclusive expression that excludes the presence of other components. is not.

In addition, in the description below, although ordinal numbers such as “first” or “second” may be used, these terms are used for convenience to make it easier to understand the content of the embodiments. It is not limited to the order that can occur due to these ordinal numbers.

In addition, in the description described below, expressions indicating relative or absolute positional relationships, such as “in one direction,” “along one direction,” “parallel,” “orthogonal,” “center,” and “concentric.” Unless otherwise specified, the terms “coaxial” and the like include cases where the positional relationship is strictly expressed, and cases where the angle or distance is displaced within the range where tolerance or the same level of function is obtained.

In addition, in the description below, expressions indicating a state of equality, such as “same,” “equal,” “uniform,” or “homogeneous,” refer to a state of strict equality unless otherwise specified. This shall include cases where a difference occurs in the tolerance or range in which the same level of function is obtained.

In addition, in the description below, specific words such as “top”, “bottom”, “left”, “right”, “side”, “bottom”, “table”, or “ear” Even if terms meaning the position or direction are used, these terms are used for convenience to facilitate understanding of the content of the embodiment, and are not related to the position or direction when actually implemented. will be.

In addition, in the explanation described below, “… 'The upper surface of' or '... When it is described as “lower surface of” etc., in addition to the upper or lower surface of the target component, it also includes the state in which other components are formed on the upper or lower surface of the target component. In other words, for example, when it is described as “B installed on the upper surface of A”, it does not prevent the insertion of a separate component “bottle” between A and B.

＜Form of implementation＞

Hereinafter, the substrate processing apparatus and substrate processing method according to this embodiment will be described.

＜Configuration of substrate processing equipment＞

FIG. 1 is a plan view schematically showing an example of the configuration of the substrate processing apparatus 1 according to Embodiment 1 of the present invention. As an example is shown in FIG. 1, the substrate processing apparatus 1 includes a carrier placement unit 3, an indexer robot (IR), a center robot (CR), and a control device 9 (controller ) and at least one processing unit 7 (four processing units in FIG. 1). The plurality of processing units 7 are for processing the substrate W (wafer).

The substrate processing apparatus 1 is a single-wafer type apparatus that can be used for substrate processing, for example, a wet etching apparatus. The substrate processing apparatus 1 has a chamber 80 . By controlling the atmosphere in the chamber 80, substrate processing can be performed in a desired atmosphere. The control device 9 can control the operation of each unit provided in the substrate processing apparatus 1. Each of the carriers CA is a receptor that accommodates the substrate W. The carrier placement unit 3 is a mechanism for holding a plurality of carriers CA. The indexer robot IR can transport the substrate W between the carrier placement unit 3 and the substrate placement unit PS. The center robot CR can transport the substrate W from any one of the substrate placement unit PS and the at least one processing unit 7 to the other. With the above configuration, the indexer robot (IR), the substrate placement unit (PS), and the center robot (CR) are transport mechanisms that transfer the substrate W between each of the processing units 7 and the carrier placement unit 3. It functions as

The unprocessed substrate W is taken out from the carrier CA by the indexer robot IR and delivered to the center robot CR through the substrate placement unit PS. The center robot CR carries the unprocessed substrate W into the processing unit 7. The processing unit 7 processes the substrate W. The processed substrate W is taken out from the processing unit 7 by the center robot CR, passes through other processing units 7 as necessary, and then passes through the substrate placing unit PS through the indexer robot ( IR) can also be used. The indexer robot IR carries the processed substrate W into the carrier CA. As described above, processing on the substrate W is performed.

＜About the control device＞

FIG. 2 is a diagram conceptually showing an example of the configuration of the control device 9 of the substrate processing apparatus 1. The control device 9 is communicatively connected to the indexer robot (IR), the center robot (CR), and the processing unit 7.

The control device 9 includes a control unit 90 that controls the operation of each operating unit in the indexer robot (IR), the center robot (CR), and the processing unit 7. Additionally, the control device 9 may be provided with a detection unit 91. The detection unit 91 detects the set value for substrate processing performed in the processing unit 7 with reference to the processing recipe for the substrate W stored in a storage medium described later. Additionally, the detection unit 91 detects the setting value in the substrate processing performed in the processing unit 7 by performing image analysis based on an image captured by a camera to be described later. In this case, the control unit 90 can control the operation of each operation unit in the processing unit 7 while referring to the setting value detected by the detection unit 91.

The control unit 9 includes a central processing unit (i.e., CPU) that executes various processes, a random access memory (i.e., RAM) that serves as a work area for computational processing, or a fixed disk. This is realized through storage media, etc. The storage medium stores various types of information in advance. The storage medium stores, for example, information about the operating conditions of the indexer robot (IR), the center robot (CR), and the processing unit 7. Information regarding the operating conditions of the processing unit 7 is, for example, a processing recipe (processing program) for processing the substrate W. The storage medium stores information for identifying each substrate W, for example.

＜About processing units＞

FIG. 3 is a side view schematically showing an example of the processing unit 7 and its related configuration in the substrate processing apparatus 1 according to the present embodiment.

The substrate processing apparatus 1 includes a spin chuck that rotates the substrate W around a vertical rotation axis Z1 passing through the center of the substrate W while maintaining the single substrate W in a substantially horizontal position. 10), a central nozzle 20 that discharges the processing liquid 120 mainly to the central portion of the substrate W, a processing liquid supply source 29 that supplies the processing liquid 120 to the central nozzle 20, and a processing liquid. A valve 25 for switching between supply and stop supply of the processing liquid 120 from the liquid supply source 29 to the central nozzle 20, a nozzle arm 22 with the central nozzle 20 mounted on an end, and a substrate ( A peripheral nozzle 50 that discharges the processing liquid 150 mainly on the peripheral portion of W (i.e., a portion other than the central portion of the substrate W surrounding the central portion of the substrate W in plan view), and a peripheral nozzle A processing liquid supply source 59 that supplies the processing liquid 150 to (50), and a valve 55 that switches between supplying and stopping the supply of the processing liquid 150 from the processing liquid supply source 59 to the peripheral nozzle 50. a nozzle arm 52 having a peripheral nozzle 50 mounted on an end, a cylindrical processing cup 12 surrounding the spin chuck 10 around a rotation axis Z1 of the substrate W, and a substrate. A camera 70, for example, a CMOS camera or a CCD camera, which captures images mainly of the peripheral part of W from above is provided.

Here, in FIG. 3, the central nozzle 20 is shown as discharging the processing liquid 120 in a direction perpendicular to the upper surface of the substrate W. The discharge direction of the central nozzle 20 is shown in FIG. 3. It is not limited to the cases shown. In addition, the periphery of the substrate W refers to a range of about 10 mm from the outer periphery of the substrate W, for example.

In addition, the treatment liquid 120 or the treatment liquid 150 may be, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, pure water (DIW), hydrogen peroxide water, organic acid (for example, citric acid, or, It may be a liquid containing at least one of (oxalic acid, etc.), an organic alkali (e.g., tetramethylammonium hydroxide (TMAH), etc.), a surfactant, and a corrosion inhibitor. Examples of chemical solutions obtained by mixing these include a mixed solution of sulfuric acid and hydrogen peroxide (SPM), a mixed solution of ammonia and hydrogen peroxide (SC1), and dilute hydrofluoric acid (DHF) obtained by diluting hydrofluoric acid (HF) with pure water.

Additionally, the processing liquid 120 supplied from the processing liquid supply source 29 and the processing liquid 150 supplied from the processing liquid supply source 59 may be the same type of processing liquid or may be different types of processing liquid.

The spin chuck 10 includes a disk-shaped spin base 10A facing the lower surface of the substrate W in a substantially horizontal position, and a plurality of devices that hold the substrate W from the outer periphery of the spin base 10A. The chuck pin 10E, the rotation shaft 10C extending downward from the center of the spin base 10A, and the spin shaft 10C are rotated to rotate the substrate W held on the spin base 10A. Equipped with a motor (10D). A plurality of chuck pins 10E are arranged at equal intervals along the circumference of the circular substrate W. Additionally, instead of the spin chuck 10, an adsorption-type chuck that vacuum-suctions the lower surface of the substrate W may be used.

The nozzle arm 22 includes an arm portion 22A, a shaft body 22B, and an actuator 22C. The actuator 22C adjusts the angle around the axis of the shaft body 22B. One end of the arm portion 22A is fixed to the shaft body 22B, and the other end of the arm portion 22A is disposed away from the axis of the shaft body 22B. Additionally, a central nozzle 20 is mounted on the other end of the arm portion 22A. By adjusting the angle of the shaft body 22B by the actuator 22C, the central nozzle 20 is configured to be able to swing in the radial direction of the substrate W. In addition, the direction of movement of the central nozzle 20 due to the swing just needs to have a component in the radial direction of the substrate W, and does not need to be strictly parallel to the radial direction of the substrate W.

The nozzle arm 52 has an arm portion 52A and a base portion 52B. One end of the arm portion 52A is fixed to the base 52B, and a peripheral nozzle 50 is attached to the other end of the arm portion 52A. The arrangement position of the nozzle arm 52 can be changed in the circumferential direction of the processing cup 12. In addition, in FIG. 3, the nozzle arm 52 is shown as fixing the peripheral nozzle 50 in the disposed position, and the nozzle arm 52, like the nozzle arm 22, is the peripheral nozzle ( 50) may be maintained to be able to swing.

Additionally, in the above example, the number of nozzles in the processing unit 7 is two, but a nozzle for discharging the processing liquid may be additionally provided at the center or peripheral portion of the substrate W.

FIG. 4 is a side view showing an example of the positional relationship between the peripheral nozzle 50 and the substrate W. As an example shown in FIG. 4 , the discharge direction X1 of the processing liquid discharged from the peripheral nozzle 50 is inclined at an acute angle θ with respect to the upper surface of the substrate W.

By discharging the processing liquid at this angle with respect to the substrate W, for example, compared to the case where the discharge direction X1 is a direction perpendicular to the upper surface of the substrate W, the discharged processing liquid is The amount of bounce from the top surface can be reduced.

FIG. 5 is a plan view showing an example of the positional relationship of the central nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W. As an example is shown in Figure 5, the central nozzle 20 is capable of swinging along a path Y1 around the shaft body 22B. On the other hand, the peripheral nozzle 50 can be placed at any position in the circumferential direction of the substrate W.

Here, the discharge direction is parallel when viewed in a plane (direction tangent to ). When the discharge direction In addition, when the discharge direction It is suppressed from being bounced and scattered by the chuck pin 10E.

＜About the operation of the substrate processing device＞

Next, an example of the operation of the substrate processing apparatus 1 will be described with reference to FIG. 6 . Additionally, FIG. 6 is a flowchart showing operations in the processing unit during operation of the substrate processing apparatus.

The indexer robot IR transports the substrate W from the carrier CA on the carrier placement unit 3 to the substrate placement unit PS. The center robot CR transports the substrate W from the substrate placement unit PS to one processing unit 7. The processing unit 7 processes the substrate W. The center robot CR transports the substrate W from the processing unit 7 to the substrate placement unit PS. The indexer robot IR transports the substrate W from the substrate placement unit PS to the carrier CA on the carrier placement unit 3.

In the substrate processing in the processing unit 7, first, a chemical liquid is supplied to the upper surface of the substrate W to perform a predetermined chemical liquid treatment (step ST01 in FIG. 6). After that, pure water (DIW) or the like is supplied to the upper surface of the substrate W to perform a rinsing treatment (step ST02 in FIG. 6). Additionally, pure water is shaken off by rotating the substrate W at high speed, thereby drying the substrate W (step ST03 in FIG. 6).

During the above-mentioned substrate processing, in the chemical liquid treatment, a predetermined processing liquid is applied from the central nozzle 20 and the peripheral nozzle 50 to the upper surface of the substrate W held by the spin chuck 10 and rotating. It is discharged. The type, discharge amount, concentration, temperature, or discharge timing of the processing liquid discharged from the central nozzle 20 and the peripheral nozzle 50 are determined by the control unit in the control device 9 based on the processing recipe stored in the storage medium. It is controlled by (90).

For example, the same type of processing liquid (SPM, etc.) is discharged from the central nozzle 20 and the peripheral nozzle 50 at the same or different timing. At this time, by varying the concentration or temperature of the processing liquid discharged from the central nozzle 20 and the peripheral nozzle 50, the etching rate can be made different at the central portion and peripheral portion of the substrate W, for example. , Even if it is recognized from the processing recipe that unevenness in the etching rate has occurred in the center and peripheral portions of the substrate W until the pre-process (dry etching process, etc.), the unevenness can be offset in this process.

Also, for example, different types of treatment liquids (such as a combination of SPM and pure water) are discharged from the central nozzle 20 and the peripheral nozzle 50 at the same or different timings. In this way, the etching rate can be made to be significantly different between the center and the periphery of the substrate W, so that, for example, the etching rate is non-uniform between the center and the periphery of the substrate W until the previous process (dry etching process, etc.). Even if this occurrence is recognized from the processing recipe, the unevenness can be offset in this process.

In addition, when performing substrate processing, the central nozzle 20 may be fixed above the central part of the substrate W, and the diameter of the substrate W may be adjusted by adjusting the angle of the shaft body 22B by the actuator 22C. It may be swaying in one direction.

In addition, the timing at which the processing liquid is discharged from the peripheral nozzle 50 is preferably after a liquid film is spread on the central portion of the upper surface of the substrate W by the processing liquid discharged from the central nozzle 20. In such a state, it is difficult for the central portion of the upper surface of the substrate W to be affected by the processing liquid discharged from the peripheral nozzle 50, so that problems in the central portion of the substrate W resulting from the action of the processing liquid can be suppressed.

＜About the discharge position of the treatment liquid by the main nozzle＞

Next, the discharge position of the processing liquid by the peripheral nozzle 50 will be described below. As described above, the peripheral nozzle 50 can be placed at any position in the circumferential direction of the substrate W, but in the case where the processing liquid discharged from the central nozzle 20 spreads on the upper surface of the substrate W, , the peripheral nozzle 50 is preferably arranged so that the processing liquid from the peripheral nozzle 50 is discharged at a location where the liquid film formed by the processing liquid discharged from the central nozzle 20 becomes relatively thin.

FIG. 7 is a plan view showing an example of the positional relationship of the central nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W.

When the central nozzle 20 is disposed at the position shown in FIG. 7, the processing liquid discharged from the central nozzle 20 spreads in the direction of the rotation direction R1 of the substrate W to form a liquid film. At this time, the processing liquid discharged from the central nozzle 20 gradually flows to the periphery of the substrate W due to the centrifugal force caused by the rotation of the substrate W, and flows down from the outer periphery of the substrate W, and the substrate ( The liquid film on the upper surface of W) also becomes thinner.

Then, for example, the peripheral nozzle 50 is aligned with the central nozzle 20 with respect to the central position CP of the straight line D1 connecting the central nozzle 20 and the central position CP of the substrate W. is located at a position extending in the rotational direction R1 from the peripheral edge of the substrate W on the opposite side (i.e., the peripheral edge of the substrate W in a position semicircularly advanced in the rotational direction R1 from the position of the central nozzle 20). It is preferably arranged to discharge the treatment liquid.

In FIG. 7, since the peripheral nozzle 50 is disposed at the above-mentioned position, the processing liquid discharged from the peripheral nozzle 50 has a relatively small liquid film formed by the processing liquid discharged from the central nozzle 20. It is discharged at the point where it becomes thinner. In this case, since it is difficult for the processing liquid discharged from the peripheral nozzle 50 to be interfered with by the processing liquid discharged from the central nozzle 20, the processing liquid discharged from the peripheral nozzle 50 is applied to the upper surface of the substrate W. It reaches the upper surface of the substrate W and becomes easier to act on. Accordingly, the processing effect of the processing liquid discharged from the peripheral nozzle 50 is increased, and, for example, even when processing a substrate with a greatly different etching rate at the center portion and the peripheral portion of the substrate W, the processing liquid discharged from the central nozzle 20 Since interference between the processing liquid being applied and the processing liquid discharged from the peripheral nozzle 50 is suppressed, it becomes easy to achieve the desired etching rate.

FIG. 8 is a plan view showing an example of the positional relationship of the central nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W.

Even when the central nozzle 20 is disposed at the position shown in FIG. 8, the processing liquid discharged from the central nozzle 20 diffuses in the direction of the rotation direction R1 of the substrate W to form a liquid film. At this time, the processing liquid discharged from the central nozzle 20 gradually flows to the periphery of the substrate W due to the centrifugal force caused by the rotation of the substrate W, and flows down from the outer periphery of the substrate W and at the same time, the substrate ( The liquid film on the upper surface of W) also becomes thinner.

Then, for example, the peripheral nozzle 50 is aligned with the central nozzle 20 with respect to the central position CP of the straight line D2 connecting the central nozzle 20 and the central position CP of the substrate W. The processing liquid is applied to a position extending in the rotational direction R1 from the peripheral edge of the substrate W on the opposite side (i.e., the peripheral edge of the substrate W in a position semicircularly advanced in the rotational direction R1 from the position of the central nozzle 20). It is preferable that it is arranged to discharge.

＜Control of the liquid film width of the treatment liquid by the main nozzle＞

FIG. 9 is a plan view showing an example of the liquid film width W1 of the processing liquid 150 discharged from the peripheral nozzle 50. In addition, the liquid film width W1 of the processing liquid 150 shown as an example in FIG. 9 is a simple example including the ratio of the liquid film width W1 to the entire substrate W.

As an example shown in FIG. 9 , the processing liquid 150 discharged from the peripheral nozzle 50 spreads in the rotational direction R1 of the substrate W, and spreads to the radial inside and outside of the substrate W. also spreads. Here, the width of the liquid film formed by diffusion of the processing liquid 150 discharged from the peripheral nozzle 50 in the radial direction of the substrate W is taken as the liquid film width W1.

The liquid film width W1 can be controlled by any of the following methods or a combination thereof. Additionally, the control is performed by the control device 9.

In the first method, the liquid film formed on the upper surface of the substrate W is first imaged using the camera 70 (see FIG. 3). Then, image data of the image captured by the camera 70 is input to the detection unit 91 (see FIG. 2) in the control device 9. Then, the detection unit 91 detects the liquid film width W1 by performing image analysis on the image data.

Next, the control unit 90 of the control device 9 determines the rotation speed of the substrate W and the peripheral nozzle 50 while referring to the liquid film width W1 detected by the detection unit 91. Adjust the discharge amount of the discharged treatment liquid 150.

Specifically, when the liquid film width W1 is narrowed, the control unit 90 increases the rotation speed of the substrate W to increase the centrifugal force of the substrate W. On the other hand, when the liquid film width W1 is widened, the control unit 90 lowers the rotation speed of the substrate W to reduce the centrifugal force of the substrate W. Additionally, when the rotation speed of the substrate W is increased, the discharge amount of the processing liquid 150 is lowered as necessary. On the other hand, when the rotation speed of the substrate W is lowered, the discharge amount of the processing liquid 150 is increased as necessary. Additionally, when the discharge amount of the processing liquid 150 is lowered, the concentration or temperature of the processing liquid 150 may be increased. Similarly, when the discharge amount of the processing liquid 150 is increased, the concentration or temperature of the processing liquid 150 may be lowered.

In the second method, first, the detection unit 91 in the control device 9 refers to a processing recipe for processing the substrate W from the storage medium of the control device 9 or the like. Then, the liquid film width W1 to be formed by the processing liquid 150 is detected from the etching profile of the processing recipe corresponding to this process.

Next, the control unit 90 of the control device 9 determines the rotation speed of the substrate W and the peripheral edge while referring to the liquid film width W1 detected by the detection unit 91 and a corresponding table described later. The discharge amount of the processing liquid 150 discharged from the nozzle 50 is adjusted.

Here, the above correspondence table is a table showing the relationship between the liquid film width W1 formed by the processing liquid 150, the rotation speed of the substrate W, and the discharge amount of the processing liquid 150, and is preliminarily determined by experiment or the like. It is written.

By controlling the liquid film width W1 of the processing liquid 150 discharged from the peripheral nozzle 50, the range in which the etching rate is determined by the processing liquid 150 can be specified with high precision, so that the desired etching profile can be achieved. It can be realized.

<About the effects produced by the embodiment described above>

Next, examples of effects generated by the embodiment described above are shown. In addition, in the following description, the effect is described based on the specific configuration shown as an example in the embodiment described above, but it may be replaced with another specific configuration shown as an example in the specification of the present application to the extent that the same effect occurs. .

According to the embodiment described above, the substrate processing method includes a process of rotating the substrate W held in the substrate holding portion, and using the central nozzle 20 at the center of the rotating substrate W. A process of discharging the first processing liquid and a process of discharging the second processing liquid to the peripheral part of the rotating substrate W using the peripheral nozzle 50 are provided. Here, the substrate holding portion corresponds to, for example, the spin chuck 10. Additionally, the first processing liquid corresponds to, for example, the processing liquid 120. Additionally, the second processing liquid corresponds to, for example, the processing liquid 150. Here, the peripheral nozzle 50 discharges the processing liquid 150 along the forward direction of rotation of the substrate W from a direction inclined by an angle θ with respect to the main surface of the substrate W. In addition, the peripheral nozzle 50 has a position after a semicircular position in the forward direction of rotation of the substrate W from the straight line D1 connecting the center position CP of the substrate W and the central nozzle 20 in plan view. The processing liquid 150 is discharged onto the peripheral portion of the substrate W.

According to this configuration, the degree of freedom of the etching profile can be increased. Specifically, the processing liquid 150 discharged from the peripheral nozzle 50 is discharged at a location where the liquid film formed by the processing liquid 120 discharged from the central nozzle 20 is relatively thin. Accordingly, since the processing liquid 150 becomes less susceptible to interference from the processing liquid 120, the processing liquid 150 easily reaches the upper surface of the substrate W and acts on the upper surface of the substrate W. Accordingly, the processing effect of the processing liquid 150 is increased, and it becomes easy to realize a desired etching rate, for example, an etching rate that is significantly different between the central portion and the peripheral portion of the substrate W. As a result, for example, the shape of the focus ring for uniformizing the etching rate of dry etching changes due to the dry etching, and the etching gas concentration at the periphery of the substrate W becomes non-uniform. When the etching process is a preprocess. Also, by performing an etching process in which the etching profile is significantly different at the center portion and the peripheral portion of the substrate, the substrate processing can be performed while offsetting the unevenness of etching.

Additionally, if there are no special restrictions, the order in which each process is performed can be changed.

In addition, the same effect can be achieved even when other configurations exemplified in the specification of the present application are appropriately added to the above configuration, that is, even when other configurations in the specification of the present application that are not mentioned as the above configuration are appropriately added.

In addition, according to the embodiment described above, a process of rotating the substrate W held by the spin chuck 10 and processing is performed on the central portion of the rotating substrate W using the central nozzle 20. A process of discharging the liquid 120, a process of discharging the processing liquid 150 to the periphery of the rotating substrate W using the peripheral nozzle 50, and the liquid film of the processing liquid 150, the substrate. A process of detecting the liquid film width W1, which is the radial width at the peripheral portion of W, and the rotation speed of the rotating substrate W and the peripheral nozzle 50 based on the detected liquid film width W1. A process for controlling the discharge amount of the treatment liquid 150 from is provided. Here, the peripheral nozzle 50 discharges the processing liquid 150 along the forward direction of rotation of the substrate W from a direction inclined by an angle θ with respect to the main surface of the substrate W.

According to this configuration, the degree of freedom of the etching profile can be increased. Specifically, by controlling the liquid film width W1 of the processing liquid 150 discharged from the peripheral nozzle 50, the range in which the etching rate is determined by the processing liquid 150 can be specified with high precision. The desired etching profile can be realized.

Additionally, if there are no special restrictions, the order in which each process is performed can be changed.

In addition, the same effect can be achieved even when other configurations exemplified in the specification of the present application are appropriately added to the above configuration, that is, even when other configurations in the specification of the present application that are not mentioned as the above configuration are appropriately added.

Additionally, according to the embodiment described above, the peripheral nozzle 50 discharges the processing liquid 150 after a liquid film of the processing liquid 120 is formed in the central portion of the substrate W. According to this configuration, the central portion of the upper surface of the substrate W is less likely to be affected by the processing liquid 150 discharged from the peripheral nozzle 50, so the substrate W due to the action of the processing liquid 150 Problems in the central part can be suppressed.

In addition, according to the embodiment described above, the processing liquid 120 and the processing liquid 150 are different types of processing liquid. According to this configuration, the etching rate can be significantly different between the central portion and the peripheral portion of the substrate W.

In addition, according to the embodiment described above, the central nozzle 20 can swing in the radial direction of the substrate W. According to this configuration, the processing liquid 120 discharged from the central nozzle 20 can be quickly and uniformly spread.

<About modifications of the embodiment described above>

In the embodiment described above, the discharge amount, concentration, or temperature of the processing liquid of the central nozzle 20 and the peripheral nozzle 50 were controlled to offset the unevenness of the etching rate expected from the processing recipe. ) and the peripheral nozzle 50. Before processing the substrate using the peripheral nozzle 50, the thickness of the film formed on the upper surface of the substrate W or the depth of the groove, etc. are measured using an optical sensor, etc., and the measured values are referred to, thereby determining the central The discharge amount, concentration, or temperature of the processing liquid of the nozzle 20 and the peripheral nozzle 50 may be controlled.

In the embodiments described above, the materials, materials, dimensions, shapes, relative arrangement relationships, or implementation conditions of each component may also be described, but these are examples in all aspects and are described in the specification of the present application. In cases where it is limited to this, it is assumed that there is no such thing.

Accordingly, countless modifications and equivalents for which examples are not shown are contemplated within the scope of the technology disclosed in this specification. For example, this includes cases where at least one component is modified, added, or omitted.

Additionally, in the embodiments described above, when material names, etc. are described without special designation, it is assumed that the materials contain other additives, for example, alloys, etc., unless a contradiction occurs. .

1 Substrate processing device
3 Carrier Relay Department
7 processing units
9 control unit
10 spin chuck
10A spin base
10C rotation axis
10D spin motor
10E chuck pin
12 processing cups
20 central nozzle
22, 52 nozzle arm
22A, 52A arm section
22B axis body
22C actuator
25, 55 valves
29, 59 Treatment liquid source
50 starring nozzle
52B donation
70 camera
80 chamber
90 control unit
91 Detection unit
120, 150 treatment liquid

Claims (4)

A process of rotating the substrate held in the substrate holding unit,
A process of discharging a first processing liquid to the center of the rotating substrate using a central nozzle;
a step of discharging a second processing liquid onto a peripheral portion of the rotating substrate using a peripheral nozzle;
a step of detecting the liquid film width of the second processing liquid, which is the width of the liquid film in the radial direction at the periphery of the substrate;
A step of controlling the rotation speed of the rotating substrate and the discharge amount of the second processing liquid from the peripheral nozzle based on the detected liquid film width,
The peripheral nozzle discharges the second processing liquid along the forward direction of rotation of the substrate from a direction inclined with respect to the main surface of the substrate.
Substrate processing method. In claim 1,
A substrate processing method, wherein the peripheral nozzle discharges the second processing liquid after a liquid film of the first processing liquid is formed in the center of the substrate. In claim 1,
A substrate processing method, wherein the first processing liquid and the second processing liquid are different types of processing liquid. In claim 1,
The substrate processing method, wherein the central nozzle is capable of swinging in the radial direction of the substrate.