KR20230062497A - Substrate processing method - Google Patents

Abstract

[Task] Increase the degree of freedom of the etching profile.
[Solution Means] A substrate processing method includes a step of rotating a substrate, a step of discharging a first treatment liquid to the central portion of the rotating substrate using a central nozzle, and a flat surface of the rotating substrate. Equipped with a step of discharging a second processing liquid to a periphery surrounded by viewing using a periphery nozzle, wherein the periphery nozzle performs the second processing along a forward direction of rotation of the substrate from a direction inclined with respect to the main surface of the substrate. The liquid is discharged, and the periphery nozzle discharges the second processing liquid to the periphery of the substrate from a line connecting the center of the substrate and the central nozzle in a planar view in a semicircular position in the forward direction of the rotation of the substrate.

Description

Substrate processing method {SUBSTRATE PROCESSING METHOD}

The technology disclosed herein relates to a substrate processing method. Substrates to be processed include, for example, semiconductor substrates, liquid crystal display substrates, flat panel display (FPD) substrates such as organic EL (electroluminescence) display devices, optical disk substrates, magnetic disk substrates, and magneto-optical substrates. A substrate for a disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell, and the like are included.

[0002] Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as "substrate"), various treatments are performed on the substrate using a substrate processing apparatus. The treatment includes an etching treatment for removing the upper surface of the substrate.

Japanese Patent No. 6064875

In the above etching treatment, there are requests for various etching profiles. For example, there are cases in which an etching profile that cancels unevenness in etching in a previous process is required.

Then, for example, it is conceivable to perform the substrate processing while canceling the non-uniformity of the etching by performing etching processing having a large difference in the etching profile between the central portion and the peripheral portion of the substrate.

The technology disclosed in this specification was made in view of the problems described above, and is a technology for increasing the degree of freedom of the etching profile in substrate processing.

A first aspect of a technology related to a substrate processing method disclosed in this specification is a step of rotating a substrate held in a substrate holding unit, and a first processing using a central nozzle in the center of the rotating substrate a step of discharging a liquid; and a step of discharging a second processing liquid using a peripheral nozzle to a periphery of the rotating substrate surrounding the central portion in plan view, wherein the peripheral nozzle comprises: The second processing liquid is discharged from a direction inclined with respect to the main surface of the substrate along a forward direction of rotation of the substrate, and the peripheral nozzles discharge the second treatment liquid from a line connecting the center of the substrate and the central nozzle in plan view. The second processing liquid is discharged to the periphery of the substrate after a position advanced halfway in the forward direction of rotation of the substrate.

A second aspect of the technique disclosed in this specification is a step of rotating a substrate held by a substrate holding unit, and a step of discharging a first treatment liquid to the center of the rotating substrate using a central nozzle and a step of discharging a second processing liquid to the periphery of the rotating substrate using a peripheral nozzle, and a liquid film width, which is a width of the liquid film of the second processing liquid in the radial direction at the periphery of the substrate and a step of controlling a rotation speed of the rotating substrate and a discharge amount of the second processing liquid from the peripheral nozzle, based on the detected width of the liquid film, wherein the peripheral nozzle comprises: The second processing liquid is discharged from a direction inclined with respect to the main surface of the substrate along a forward direction of rotation of the substrate.

A third aspect of the technique disclosed in this specification relates to the first or second aspect, wherein the peripheral nozzle is configured to, after the liquid film of the first processing liquid is formed on the central portion of the substrate, the second processing liquid ejects

In a fourth aspect of the technique disclosed in this specification, in relation to any one of the first to third aspects, the first treatment liquid and the second treatment liquid are different types of treatment liquids.

In a fifth aspect of the technology disclosed in this specification, in relation to any one of the first to fourth aspects, the central nozzle is capable of swinging in the radial direction of the substrate.

According to the first to fifth aspects of the technology disclosed in this specification, the degree of freedom of the etching profile in substrate processing can be increased.

In addition, the object, characteristic, aspect, and advantage related to the technology disclosed in this specification will become more clear from the detailed description and accompanying drawings shown below.

1 is a plan view schematically illustrating an example of a configuration of a substrate processing apparatus according to an embodiment.
2 is a diagram conceptually showing an example of a configuration of a control device of a substrate processing apparatus.
3 is a side view schematically illustrating an example of a processing unit and related configurations in the substrate processing apparatus according to the embodiment.
4 is a side view showing an example of a positional relationship between a peripheral nozzle and a substrate.
5 is a plan view showing an example of a positional relationship between a central nozzle and a peripheral nozzle on an upper surface of a substrate.
6 is a flowchart showing operations in a processing unit among operations of the substrate processing apparatus.
7 is a plan view showing an example of a positional relationship between a central nozzle and a peripheral nozzle on the upper surface of a substrate.
8 is a plan view showing an example of a positional relationship between a central nozzle and a peripheral nozzle on an upper surface of a substrate.
9 is a plan view showing an example of the liquid film width of the processing liquid discharged from the peripheral nozzle.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment is described, referring an accompanying drawing. In the following embodiments, detailed features and the like are also shown for description of the technique, but they are examples, and not all of them are necessarily essential features for the embodiment to be practicable.

In addition, the drawings are shown schematically, and for convenience of description, appropriately, omission of the configuration or simplification of the configuration is made in the drawings. In addition, the mutual relationship of the size and position of the structure etc. which are respectively shown in different drawings is not necessarily accurately described, and can be changed suitably. In addition, even in drawings such as a plan view rather than a cross-sectional view, hatching may be added to facilitate understanding of the content of the embodiment.

In addition, in the description shown below, the same code|symbol is attached|subjected to the same component, and it is assumed that their names and functions are also the same. Therefore, detailed descriptions thereof are sometimes omitted to avoid redundancy.

In addition, in the description described below, when a certain component is described as "includes", "includes" or "has", unless otherwise specified, it is an exclusive expression excluding the existence of other components. is not

In addition, in the description described below, even if ordinal numbers such as "first" or "second" are sometimes used, these terms are used for convenience in order to facilitate understanding of the contents of the embodiments. It is, and is not limited to the order that can occur by these ordinal numbers.

In addition, in the description described below, expressions indicating relative or absolute positional relationships, for example, "in one direction", "along one direction", "parallel", "orthogonal", "center", "concentric" Alternatively, "coaxial" and the like shall include cases in which the positional relationship is strictly expressed and cases in which the angle or distance is displaced within a range in which a tolerance or equivalent function is obtained unless otherwise specified.

In addition, in the description described below, expressions indicating that they are in an equivalent state, for example, "same", "equivalent", "uniform" or "homogeneous" are strictly equivalent unless otherwise specified. It shall include the case where it shows that it is, and the case where a difference occurs in the range in which tolerance or a function of the same degree is obtained.

In addition, in the description described below, specifying "top", "bottom", "left", "right", "side", "bottom", "table" or "two" Even if a term meaning the position or direction of is used, these terms are used for convenience in order to facilitate understanding of the content of the embodiment, and are not related to the position or direction when actually implemented. will be.

In addition, in the description described below, "... upper surface of” or “… When described as "the lower surface of" or the like, in addition to the upper or lower surface of the target component, a state in which other components are formed on the upper or lower surface of the target component is also included. That is, for example, in the case of being described as "a installed on the upper surface of a", it does not prevent the interposition of a separate component "bottle" between a and b.

<Mode of implementation>

Hereinafter, the substrate processing apparatus and substrate processing method according to the present embodiment will be described.

<About the configuration of the substrate processing device>

1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus 1 according to the first embodiment. As an example is shown in FIG. 1 , the substrate processing apparatus 1 includes a carrier mounting unit 3, an indexer robot IR, a center robot CR, and a control device 9 (controller). ) and at least one processing unit 7 (four processing units in FIG. 1). The plurality of processing units 7 are for processing the substrate W (wafer).

The substrate processing apparatus 1 is a single wafer type apparatus that can be used for substrate processing, and is, for example, a wet etching apparatus. The substrate processing apparatus 1 has a chamber 80 . By controlling the atmosphere in the chamber 80, substrate processing can be performed in a desired atmosphere. The control device 9 can control the operation of each part provided in the substrate processing apparatus 1 . Each of the carriers CA is a container for accommodating the substrate W. The carrier mounting unit 3 is a mechanism for holding a plurality of carriers CA. The indexer robot IR can transport the substrate W between the carrier mounting unit 3 and the substrate mounting unit PS. The center robot CR can transport the substrate W from one of the substrate mounting unit PS and the at least one processing unit 7 to the other one. With the above configuration, the indexer robot IR, the substrate placing unit PS, and the center robot CR are conveying mechanisms for conveying the substrate W between each of the processing units 7 and the carrier placing unit 3. function as

The unprocessed board|substrate W is taken out from the carrier CA by the indexer robot IR, and is carried to the center robot CR via the board|substrate mounting part PS. The center robot CR carries this unprocessed board|substrate W into the processing unit 7. The processing unit 7 processes the substrate W. The processed substrate W is taken out of the processing unit 7 by the center robot CR, passes through other processing units 7 as needed, and then passes through the substrate mounting unit PS to the indexer robot ( IR) may also be used. The indexer robot IR carries in the processed board|substrate W to the carrier CA. As a result of the above, the processing of the substrate W is performed.

<About the control device>

2 is a diagram conceptually showing an example of the configuration of the control device 9 of the substrate processing apparatus 1 . The control device 9 is connected with respect to the indexer robot IR, the center robot CR, and the processing unit 7 so that communication is possible.

The control device 9 includes a control unit 90 that controls the operation of each operation unit in the indexer robot IR, the center robot CR, and the processing unit 7 . In addition, the control device 9 may include a detection unit 91 . The detection unit 91 refers to a processing recipe of the substrate W stored in a storage medium described later, and detects a set value in substrate processing performed in the processing unit 7 . In addition, the detection unit 91 detects a set value in the substrate processing performed in the processing unit 7 by performing image analysis based on an image captured by a camera described later. In this case, the control unit 90 can control the operation of each operation unit in the processing unit 7 while referring to the set value detected by the detection unit 91 .

The control device 9 includes a central processing unit (CPU) that executes various processes, a random access memory (RAM) serving as a work area for arithmetic processing, or a fixed disk. It is realized by a storage medium such as The storage medium stores various types of information in advance. The storage medium stores information regarding the operating conditions of the indexer robot IR, the center robot CR, and the processing unit 7, for example. The information regarding the operating conditions of the processing unit 7 is, for example, a processing recipe (processing program) for processing the substrate W. The storage medium stores information for identifying each substrate W, for example.

<About the processing unit>

FIG. 3 is a side view schematically illustrating an example of a processing unit 7 and a configuration related thereto in the substrate processing apparatus 1 according to the present embodiment.

The substrate processing apparatus 1 includes a spin chuck (which rotates the substrate W around a vertical rotational axis Z1 passing through the central portion of the substrate W while holding the substrate W in a substantially horizontal position) ( 10), a central nozzle 20 for discharging the treatment liquid 120 to the central portion of the substrate W, a treatment liquid supply source 29 for supplying the treatment liquid 120 to the central nozzle 20, and processing A valve 25 for switching supply and stop of supply of the treatment liquid 120 from the liquid supply source 29 to the central nozzle 20, a nozzle arm 22 having the central nozzle 20 attached to an end, and a substrate ( a peripheral nozzle 50 for discharging the treatment liquid 150 mainly to the periphery of the substrate W (that is, a portion other than the central portion of the substrate W that surrounds the central portion of the substrate W when viewed in plan); A treatment liquid supply source 59 for supplying the treatment liquid 150 to the treatment liquid supply source 59 and a valve 55 for switching between supply of the treatment liquid 150 from the treatment liquid supply source 59 to the periphery nozzle 50 and supply stop and a nozzle arm 52 having a peripheral nozzle 50 attached to an end thereof, a tubular processing cup 12 surrounding the spin chuck 10 around the rotational axis Z1 of the substrate W, and a substrate A camera 70, for example, a CMOS camera or a CCD camera, which captures images of the main periphery of W from above is provided.

Here, in FIG. 3 , the central nozzle 20 is shown as ejecting the processing liquid 120 in a direction orthogonal to the upper surface of the substrate W, but the ejection direction of the central nozzle 20 is shown in FIG. 3 It is not limited to the case shown. Note that the periphery of the substrate W refers to a range of about 10 mm from the outer periphery of the substrate W, for example.

Further, the treatment liquid 120 or the treatment liquid 150 may be, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, pure water (DIW), hydrogen peroxide water, an organic acid (eg, citric acid, or oxalic acid, etc.), an organic alkali (for example, tetramethylammonium hydroxide (TMAH), etc.), a surfactant, and a liquid containing at least one of a corrosion inhibitor. Examples of chemical liquids in which these are mixed include a mixed solution of sulfuric acid and hydrogen peroxide (SPM), a mixed solution of ammonia and hydrogen peroxide (SC1), hydrofluoric acid (DHF) obtained by diluting hydrofluoric acid (HF) with pure water, and the like.

Also, the processing liquid 120 supplied from the processing liquid supply source 29 and the processing liquid 150 supplied from the processing liquid supply source 59 may be the same type of processing liquid or different types of processing liquids.

The spin chuck 10 includes a disc-shaped spin base 10A facing the lower surface of the substrate W in a substantially horizontal position, and a plurality of spin bases 10A holding the substrate W from the outer periphery of the spin base 10A. Spin to rotate the substrate W held on the spin base 10A by rotating the chuck pin 10E, the rotary shaft 10C extending downward from the center of the spin base 10A, and the rotary shaft 10C. A motor 10D is provided. The plurality of chuck pins 10E are arranged at equal intervals along the circumference of the circular substrate W. Alternatively, instead of the spin chuck 10, a suction-type chuck that vacuum-sucks the lower surface of the substrate W may be used.

The nozzle arm 22 includes an arm portion 22A, a shaft body 22B, and an actuator 22C. The actuator 22C adjusts the angle around the axis of the shaft body 22B. One end of the arm portion 22A is fixed to the shaft body 22B, and the other end of the arm portion 22A is disposed away from the shaft of the shaft body 22B. Moreover, the center nozzle 20 is attached to the other end part of 22 A of arm parts. By adjusting the angle of the shaft body 22B by the actuator 22C, the center nozzle 20 is configured to be capable of swinging in the radial direction of the substrate W. In addition, the direction of movement of the center nozzle 20 due to swinging should just have a component in the radial direction of the substrate W, and need not be strictly parallel to the radial direction of the substrate W.

The nozzle arm 52 includes an arm portion 52A and a base portion 52B. One end of the arm portion 52A is fixed to the base 52B, and the peripheral nozzle 50 is attached to the other end of the arm portion 52A. The arrangement position of the nozzle arm 52 can be changed in the circumferential direction of the processing cup 12 . 3, the nozzle arm 52 is shown as fixing the peripheral nozzle 50 in the position where it is placed, but the nozzle arm 52, like the nozzle arm 22, the peripheral nozzle ( 50) may be held so as to be able to swing.

In the above example, although the number of nozzles in the processing unit 7 is two, nozzles for discharging the processing liquid may be further provided in the central portion or the periphery of the substrate W.

4 is a side view showing an example of the positional relationship between the peripheral nozzle 50 and the substrate W. As shown in FIG. As an example shown in FIG. 4 , the discharge direction X1 of the treatment liquid discharged from the peripheral nozzle 50 is inclined at an acute angle θ with respect to the upper surface of the substrate W.

By discharging the processing liquid at such an angle with respect to the substrate W, the discharged processing liquid is discharged to the substrate W, compared to the case where the discharge direction X1 is perpendicular to the upper surface of the substrate W, for example. It is possible to reduce the amount of bounce from the upper surface of the

5 is a plan view showing an example of the positional relationship between the central nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W. As shown in FIG. As an example is shown in Fig. 5, the central nozzle 20 is swingable along a path Y1 around the shaft 22B. On the other hand, the peripheral nozzle 50 can be disposed at any position in the circumferential direction of the substrate W.

Here, the discharge direction X1 of the processing liquid discharged from the peripheral nozzle 50 is preferably the rotational direction of the substrate W at the location where the processing liquid is discharged (ie, the outer circumference of the substrate W at that location). is tangent to) parallel when viewed from the plane. When the discharge direction X1 is such a direction, since the processing liquid is discharged along the forward direction of rotation of the substrate W, bounce of the processing liquid from the substrate W can be suppressed. In addition, when the discharge direction X1 is such a direction, since the discharged processing liquid does not flow in the radial direction of the substrate W, the processing liquid clamps the substrate W from the outer periphery of the spin base 10A. It is suppressed that it bounces off the chuck pin 10E and scatters.

<About the operation of the substrate processing device>

Next, an example of the operation of the substrate processing apparatus 1 will be described with reference to FIG. 6 . 6 is a flowchart showing the operation of the processing unit during the operation of the substrate processing apparatus.

The indexer robot IR conveys the substrate W from the carrier CA on the carrier mounting unit 3 to the substrate mounting unit PS. The center robot CR conveys the substrate W from the substrate mounting unit PS to one processing unit 7 . The processing unit 7 processes the substrate W. The center robot CR conveys the substrate W from the processing unit 7 to the substrate placing unit PS. The indexer robot IR conveys the substrate W from the substrate mounting unit PS to the carrier CA on the carrier mounting unit 3 .

In the substrate processing in the processing unit 7, first, a chemical solution is supplied to the upper surface of the substrate W to perform a predetermined chemical processing (step ST01 in FIG. 6). Thereafter, pure water (DIW) or the like is supplied to the upper surface of the substrate W to perform a rinse treatment (step ST02 in FIG. 6). Further, pure water is removed by rotating the substrate W at high speed, thereby drying the substrate W (step ST03 in FIG. 6).

Among the above substrate processes, in the chemical liquid process, a predetermined process liquid is applied from the central nozzle 20 and the peripheral nozzle 50 to the upper surface of the substrate W held by the spin chuck 10 and rotating. is discharged The type, discharge amount, concentration, temperature, or discharge timing of the processing liquid discharged from the central nozzle 20 and the peripheral nozzle 50 is controlled by the control unit 9 based on the processing recipe stored in the storage medium. (90).

For example, the same kind of treatment liquid (such as SPM) is discharged from the central nozzle 20 and the peripheral nozzle 50 at the same or different timing. At this time, by making the concentration or temperature of the processing liquid discharged from the central nozzle 20 and the periphery nozzle 50 different, the etching rate can be made different between the central portion and the peripheral portion of the substrate W. For example, , Even in the case where non-uniformity in the etching rate occurs in the central portion and the periphery of the substrate W up to the previous step (dry etching step, etc.) is grasped from the processing recipe, the non-uniformity can be offset in this step.

Further, for example, different types of treatment liquids (a combination of SPM and pure water, etc.) are discharged from the central nozzle 20 and the peripheral nozzle 50 at the same or different timing. In this way, since the etching rate can be greatly different between the central portion and the peripheral portion of the substrate W, for example, the etching rate is non-uniform in the central portion and peripheral portion of the substrate W until the previous step (dry etching step, etc.). Even when this occurrence is grasped from the processing recipe, the non-uniformity can be offset in this step.

In addition, the central nozzle 20 at the time of substrate processing may be fixed above the central part of the substrate W, and the angle of the shaft body 22B by the actuator 22C is adjusted to adjust the diameter of the substrate W. It may fluctuate in the direction.

In addition, the timing at which the processing liquid is discharged from the peripheral nozzles 50 is preferably after the processing liquid discharged from the central nozzle 20 spreads the liquid film on the central portion of the upper surface of the substrate W. In such a state, since the central portion of the upper surface of the substrate W is less affected by the processing liquid discharged from the peripheral nozzle 50, problems arise in the central portion of the substrate W due to the action of the processing liquid. can suppress

<About the discharge position of the treatment liquid by the main nozzle>

Next, the discharging position of the processing liquid by the peripheral nozzle 50 will be described below. As described above, the peripheral nozzle 50 can be disposed at any position in the circumferential direction of the substrate W, but in the case where the processing liquid discharged from the central nozzle 20 spreads over the upper surface of the substrate W , The peripheral nozzle 50 is preferably disposed so that the processing liquid from the peripheral nozzle 50 is discharged at a location where the liquid film formed by the processing liquid discharged from the central nozzle 20 becomes relatively thin.

7 is a plan view showing an example of the positional relationship between the central nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W. As shown in FIG.

When the center nozzle 20 is disposed at the position shown in FIG. 7 , the processing liquid discharged from the center nozzle 20 diffuses in the direction of the rotation direction R1 of the substrate W to form a liquid film. At this time, the processing liquid discharged from the central nozzle 20 gradually flows to the periphery of the substrate W due to the centrifugal force caused by the rotation of the substrate W, and flows down from the outer periphery of the substrate W. The liquid film on the upper surface of W) also becomes thinner.

In this case, the peripheral nozzle 50 is, for example, the central nozzle 20 and the central nozzle 20 with respect to the central position CP of the straight line D1 connecting the central nozzle 20 and the central position CP of the substrate W. Is at a position that advances in the rotation direction R1 from the periphery of the substrate W on the opposite side (ie, the periphery of the substrate W at a position half circumferentially advanced in the rotation direction R1 from the position of the central nozzle 20) It is preferable to arrange to discharge the treatment liquid.

In FIG. 7 , since the peripheral nozzles 50 are disposed at the above positions, the processing liquid discharged from the peripheral nozzles 50 is relatively smaller than the liquid film formed by the processing liquid discharged from the central nozzle 20. It will be discharged to the location where it becomes thin. In this case, since the processing liquid discharged from the peripheral nozzle 50 is less likely to be interfered with by the processing liquid discharged from the central nozzle 20, the processing liquid discharged from the peripheral nozzle 50 is deposited on the upper surface of the substrate W. It reaches the upper surface of the substrate W, and it becomes easy to act on it. Therefore, the processing action of the processing liquid discharged from the peripheral nozzle 50 is enhanced, and even when substrate processing with greatly different etching rates is performed at the central portion and the peripheral portion of the substrate W, for example, the central nozzle 20 discharges the processing liquid. Since interference between the processing liquid being applied and the processing liquid discharged from the peripheral nozzle 50 is suppressed, it is easy to realize a desired etching rate.

8 is a plan view showing an example of the positional relationship between the central nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W. As shown in FIG.

Even when the center nozzle 20 is disposed at the position shown in FIG. 8 , the processing liquid discharged from the center nozzle 20 diffuses in the rotation direction R1 of the substrate W to form a liquid film. At this time, the processing liquid discharged from the central nozzle 20 gradually flows to the periphery of the substrate W due to the centrifugal force caused by the rotation of the substrate W, and flows down from the outer periphery of the substrate W, and simultaneously with the substrate ( The liquid film on the upper surface of W) also becomes thinner.

In this case, the peripheral nozzle 50 is, for example, the central nozzle 20 and the central nozzle 20 with respect to the central position CP of the straight line D2 connecting the central nozzle 20 and the central position CP of the substrate W. is the periphery of the substrate W on the opposite side (ie, the periphery of the substrate W at a position half-turned in the rotational direction R1 from the position of the central nozzle 20) at a position moving in the rotational direction R1. It is preferable to arrange to discharge.

<About control of liquid film width of processing liquid by peripheral nozzle>

FIG. 9 is a plan view showing an example of the liquid film width W1 of the processing liquid 150 discharged from the peripheral nozzle 50 . In addition, the width W1 of the liquid film of the processing liquid 150 shown as an example in FIG. 9 is a simple example including the ratio of the width W1 of the liquid film to the entire substrate W.

As an example shown in FIG. 9 , the processing liquid 150 discharged from the peripheral nozzle 50 spreads in the rotational direction R1 of the substrate W while spreading inward and outward in the radial direction of the substrate W. also spread Here, the width of the liquid film formed by diffusion of the processing liquid 150 discharged from the peripheral nozzle 50 in the radial direction of the substrate W is defined as the liquid film width W1.

The liquid film width W1 can be controlled by any one of the following methods or a combination thereof. In addition, the said control is performed by the control apparatus 9.

As a first method, first, the liquid film formed on the upper surface of the substrate W is captured using a camera 70 (see FIG. 3). And the image data of the image captured by the camera 70 is input to the detection part 91 (refer FIG. 2) in the control apparatus 9. Then, the detection unit 91 detects the liquid film width W1 described above by performing image analysis on the image data.

Next, while referring to the liquid film width W1 detected by the detection unit 91, the control unit 90 in the control device 9 determines the rotation speed of the substrate W and the peripheral nozzle 50. The discharge amount of the discharged treatment liquid 150 is adjusted.

Specifically, when the liquid film width W1 is narrowed, the controller 90 increases the rotational speed of the substrate W to increase the centrifugal force of the substrate W. On the other hand, when the liquid film width W1 is widened, the controller 90 lowers the rotational speed of the substrate W to reduce the centrifugal force of the substrate W. When the rotation speed of the substrate W is increased, the discharge amount of the processing liquid 150 is lowered as necessary. On the other hand, when the rotation speed of the substrate W is lowered, the discharge amount of the treatment liquid 150 is increased as needed. In addition, when the discharge amount of the treatment liquid 150 is lowered, the concentration or temperature of the treatment liquid 150 may be increased. Similarly, when the discharge amount of the treatment liquid 150 is increased, the concentration or temperature of the treatment liquid 150 may be lowered.

As the second method, first, the detection unit 91 in the control device 9 refers to a processing recipe for processing the substrate W from the storage medium of the control device 9 or the like. Then, the liquid film width W1 to be formed by the processing liquid 150 is detected from the etching profile of the processing recipe corresponding to this process.

Next, while referring to the liquid film width W1 detected by the detection unit 91 and a correspondence table described later, the control unit 90 in the control device 9 determines the rotation speed of the substrate W and the periphery. The discharge amount of the processing liquid 150 discharged from the nozzle 50 is adjusted.

Here, the above correspondence table is a table showing the relationship between the width W1 of the liquid film formed by the processing liquid 150, the number of revolutions of the substrate W, and the discharge amount of the processing liquid 150, and has been previously conducted by experiments or the like. written

By controlling the liquid film width W1 of the processing liquid 150 discharged from the peripheral nozzle 50, the range in which the etching rate is determined by the processing liquid 150 can be specified with high precision, so that a desired etching profile can be obtained. It can be realized.

<About the effect generated by the embodiment described above>

Next, examples of effects generated by the embodiments described above are shown. In the following description, the effect is described based on the specific configurations exemplified in the embodiments described above, but to the extent that the same effect occurs, it may be substituted with other specific configurations exemplified in the present specification. .

According to the embodiment described above, the substrate processing method includes the step of rotating the substrate W held by the substrate holding unit, and using the central nozzle 20 at the center of the rotating substrate W. A process of discharging the first processing liquid and a process of discharging the second processing liquid to the periphery of the rotating substrate W using the periphery nozzle 50 are provided. Here, the substrate holder corresponds to, for example, the spin chuck 10 or the like. In addition, the first processing liquid corresponds to, for example, the processing liquid 120 or the like. In addition, the second processing liquid corresponds to, for example, the processing liquid 150 or the like. Here, the peripheral nozzle 50 discharges the processing liquid 150 along the forward direction of rotation of the substrate W from a direction inclined by an angle θ with respect to the main surface of the substrate W. In addition, the peripheral nozzle 50 is located after the position in the forward direction of the rotation of the substrate W from the straight line D1 connecting the central position CP of the substrate W and the central nozzle 20 in plan view. The processing liquid 150 is discharged to the periphery of the substrate W.

According to this configuration, the degree of freedom of the etching profile can be increased. Specifically, the processing liquid 150 discharged from the peripheral nozzle 50 is discharged to a location where the liquid film formed by the processing liquid 120 discharged from the central nozzle 20 becomes relatively thin. Therefore, since the processing liquid 150 is less likely to be interfered with by the processing liquid 120, the processing liquid 150 reaches the upper surface of the substrate W and acts on the upper surface of the substrate W more easily. Accordingly, the processing action of the processing liquid 150 is enhanced, and it is easy to realize a desired etching rate, such as an etching rate that is greatly different between the central portion and the periphery of the substrate W, for example. As a result, for example, the focus ring for uniformizing the dry etching etching rate is changed in shape by the dry etching, and the etching process in which the etching gas concentration at the periphery of the substrate W becomes non-uniform is a case where the etching process is a pre-process. Even so, by performing an etching process in which the etching profile differs greatly between the central portion and the periphery of the substrate, the substrate processing can be performed while the non-uniformity of etching is offset.

In addition, if there is no particular restriction, the order in which each process is performed can be changed.

In addition, the same effect can be produced even when other structures exemplified in the present specification are appropriately added to the above configurations, that is, when other configurations in the present specification that are not mentioned as the above configurations are appropriately added.

Further, according to the embodiment described above, the process of rotating the substrate W held by the spin chuck 10 and processing using the center nozzle 20 in the center of the rotating substrate W The process of discharging the liquid 120, the process of discharging the processing liquid 150 to the periphery of the rotating substrate W using the peripheral nozzle 50, and the liquid film of the processing liquid 150 on the substrate The process of detecting the liquid film width W1, which is the width in the radial direction at the periphery of W, and the rotation speed of the substrate W rotating based on the detected liquid film width W1 and the peripheral nozzle 50 A process of controlling the discharge amount of the treatment liquid 150 from the process is provided. Here, the peripheral nozzle 50 discharges the processing liquid 150 along the forward direction of rotation of the substrate W from a direction inclined by an angle θ with respect to the main surface of the substrate W.

According to this configuration, the degree of freedom of the etching profile can be increased. Specifically, by controlling the liquid film width W1 of the processing liquid 150 discharged from the peripheral nozzle 50, the range in which the etching rate is determined by the processing liquid 150 can be specified with high precision. Any desired etch profile can be realized.

In addition, if there is no particular restriction, the order in which each process is performed can be changed.

In addition, the same effect can be produced even when other structures exemplified in the present specification are appropriately added to the above configurations, that is, when other configurations in the present specification that are not mentioned as the above configurations are appropriately added.

Further, according to the embodiment described above, the peripheral nozzle 50 discharges the processing liquid 150 after the liquid film of the processing liquid 120 is formed in the central portion of the substrate W. According to this configuration, since the central portion of the upper surface of the substrate W is less affected by the processing liquid 150 discharged from the peripheral nozzle 50, the substrate W resulting from the action of the processing liquid 150 The problem in the center part of can be suppressed.

Moreover, according to the embodiment described above, the processing liquid 120 and the processing liquid 150 are different types of processing liquids. According to this configuration, the etching rate can be greatly different between the central portion and the peripheral portion of the substrate W.

Moreover, according to the embodiment described above, the central nozzle 20 can swing in the radial direction of the substrate W. According to this configuration, the treatment liquid 120 discharged from the central nozzle 20 can be spread quickly and uniformly.

<About Modifications of the Embodiments described above>

In the embodiment described above, the amount, concentration, or temperature of the processing liquid discharged from the central nozzle 20 and the peripheral nozzle 50 was controlled so as to offset the unevenness in the etching rate expected from the processing recipe, but the central nozzle 20 ) and the peripheral nozzle 50, the thickness of the film formed on the upper surface of the substrate W or the depth of the groove is measured using an optical sensor or the like, and the measured value is referred to. The discharge amount, concentration or temperature of the processing liquid of the nozzle 20 and the peripheral nozzle 50 may be controlled.

In the embodiments described above, the material, material, size, shape, relative arrangement relationship or implementation conditions of each component may also be described, but these are examples in all aspects and are described in this specification. It is assumed that there is no case limited to that.

Therefore, innumerable modifications and equivalents not shown as examples are assumed within the scope of the technology disclosed in this specification. For example, the case of modifying, adding, or omitting at least one component shall be included.

In addition, in the embodiment described above, when a material name or the like is described without being specifically designated, the material shall contain other additives, for example, an alloy, as long as there is no contradiction. .

1 substrate processing unit
3 carrier mounting part
7 processing unit
9 control unit
10 spin chuck
10A spin base
10C rotary shaft
10D spin motor
10E chuck pin
12 handle cup
20 central nozzle
22, 52 nozzle arms
22A, 52A arm part
22B shaft body
22C actuator
25, 55 valve
29, 59 Treatment fluid source
50 starring nozzles
52B donation
70 camera
80 chamber
90 Control
91 detection unit
120, 150 treated liquid

Claims (4)

a step of rotating the substrate held by the substrate holding unit;
a step of moving the central nozzle from a central portion of the substrate toward a radial direction of the substrate while discharging a first processing liquid from a central nozzle to the rotating substrate;
a step of discharging a second processing liquid to a periphery of the rotating substrate that surrounds the central portion when viewed in plan, using a periphery nozzle;
the peripheral nozzle discharges the second processing liquid along a forward direction of rotation of the substrate from a direction inclined with respect to the principal surface of the substrate;
In addition, the peripheral nozzle,
From a position where the central nozzle moved in the radial direction from the central portion of the substrate as viewed in plan, to a position on the periphery of the substrate further forward than a position progressed half a circumference in the forward direction of rotation of the substrate. , Discharging the second treatment liquid,
Substrate processing method. The method of claim 1,
The peripheral nozzle discharges the second processing liquid after the liquid film of the first processing liquid is formed on the substrate. The method of claim 1,
The substrate processing method of claim 1 , wherein the first processing liquid and the second processing liquid are different types of processing liquids. The method of claim 1,
The substrate processing method of claim 1 , wherein the central nozzle is capable of swinging in the radial direction of the substrate.

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