JP4950130B2 - Substrate processing apparatus, substrate processing method, program, and recording medium - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method that perform processing while rotating the substrate so that the plate surface of the substrate is in a horizontal direction, and in particular, can stably hold the substrate and appropriately process the substrate. The present invention relates to a substrate processing apparatus and a substrate processing method. Further, the present invention is a substrate processing method for processing while rotating the substrate so that the plate surface of the substrate is along the horizontal direction, and the substrate can stably hold the substrate and appropriately process the substrate The present invention relates to a program for executing a processing method and a recording medium storing the program.

  Conventionally, as disclosed in, for example, Patent Document 1, a substrate processing apparatus and a substrate processing method for processing a substrate while rotating the substrate in a state where the substrate is held so that the plate surface of the substrate is along the horizontal direction. Widely known. In such processing, it is necessary to hold the substrate rotatably in the processing apparatus. In particular, since it is thin, it is easy to flutter (bounce) during rotation, and since it has a substantially circular outer contour, it is easy to slip (displace) with respect to the processing device during rotation. When processing a semiconductor wafer (hereinafter, also simply referred to as a wafer), it is required to stably hold the substrate.

Conventionally, as a method for holding a substrate, a mechanical chuck method that mechanically grips the peripheral portion of the substrate and an adsorption method that adsorbs the substrate by contacting the substrate are widely used.
JP-A-6-9713

  However, in the mechanical chuck system, corrosion, precipitation of crystals, and the like may occur in components such as springs, depending on the chemical used for substrate processing. In such a case, it becomes difficult to stably hold the substrate.

  On the other hand, in the adsorption method, the surface of the substrate is covered over a wide area by the components for adsorption. In addition, it is not possible to appropriately perform processing on a region of the surface of the substrate that is covered with the component for adsorption.

  The present invention has been made in consideration of such points, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of stably holding a substrate and processing the substrate appropriately. It is another object of the present invention to provide a program for executing a substrate processing method capable of stably holding a substrate and appropriately processing the substrate, and a recording medium storing the program.

  As a result of intensive studies, the present inventors have found that when the substrate is rotated, a negative pressure is generated in the gap between the substrate and the table that supports the substrate from below. It was found that the substrate can be sucked toward the table by using the substrate and the substrate can be stably held on the table. The present invention is based on such knowledge of the present inventors.

A substrate processing apparatus according to the present invention is a substrate processing apparatus that performs processing while rotating the substrate so that the plate surface of the substrate is in a horizontal direction, and includes a rotatable base plate having a plurality of protruding members protruding upward. A table that can support the substrate in such a manner that the protruding member contacts the substrate from below and forms a gap between the substrate and the table, and a rotational drive mechanism that rotationally drives the base plate And a pressure adjusting device having a suction conduit whose one end is opened in the gap and a suction mechanism connected to the suction conduit.

  The substrate processing apparatus according to the present invention further includes a control device connected to the rotation drive mechanism and the pressure adjustment device, and the control device is configured to at least operate the rotation drive mechanism when the base plate is driven to rotate. The suction may be controlled by the pressure adjusting device based on the rotational speed of the base plate by driving. In such a substrate processing apparatus according to the present invention, the control device is configured such that the rotation speed of the base plate driven by the rotation drive mechanism is equal to or lower than a preset rotation speed or less than the preset rotation speed. In some cases, the suction by the pressure regulator is performed, and the suction by the pressure regulator is stopped when the rotational speed exceeds a preset rotational speed or when the rotational speed is equal to or higher than the preset rotational speed. May be.

  In the substrate processing apparatus according to the present invention, the base plate may have an opening formed at a position facing the substrate, and the table may further include a lift plate disposed in the opening of the base plate, A processing apparatus is a rotary shaft member coupled to the base plate and coupled to the rotational drive mechanism so as to be rotationally driven, the rotary shaft member having a hollow portion communicating with the opening of the base plate; , Slidable with respect to the rotating shaft member, extends in the hollow portion of the rotating shaft member, is connected to the lifting plate, is connected to the lifting shaft member, and is driven to lift the lifting shaft member An elevating drive mechanism that extends, the suction conduit extends through the elevating shaft member, and one end of the suction conduit is connected to the elevating plate and the It may be adapted to be opened to the gap located between the plates.

  Alternatively, the substrate processing apparatus according to the present invention further includes a rotating shaft member coupled to the base plate and coupled to the rotational driving mechanism so as to be rotationally driven, and the suction conduit is the rotating shaft member. The suction pipe line may extend at one end to be opened in the gap located between the base plate and the substrate.

  Furthermore, in the substrate processing apparatus according to the present invention, the protruding member includes a support portion that comes into contact with the peripheral edge portion of the substrate from below, and extends further upward than the support portion, and extends laterally from the peripheral edge portion of the substrate. And a restricting portion that comes to be positioned at the position.

  A first substrate processing method according to the present invention is a substrate processing method for processing a substrate while rotating the substrate so that the plate surface of the substrate is in a horizontal direction, and includes a table having a plurality of upward projecting members. A substrate is placed on the projecting member, and a supporting step for supporting the substrate so as to form a gap between the substrate and the table, and the rotating speed of the substrate is started by rotating the supported substrate. An accelerating step of accelerating, and a processing step of processing the substrate while rotating the substrate, and a suction conduit having one end opened in the gap for at least one period of the accelerating step; And a suction mechanism connected to the suction conduit, and the atmosphere in the gap is sucked by a pressure adjusting device.

  The suction by the pressure adjusting device during the acceleration step of the first substrate processing method according to the present invention is at least until the rotation speed of the substrate is equal to or higher than a predetermined rotation speed or exceeds the predetermined rotation speed. It may be implemented.

  Further, the first substrate processing method according to the present invention is a step that is performed after the supporting step and before the accelerating step, wherein the atmosphere of the gap is sucked by the pressure adjusting device, and the substrate You may make it further provide the holding process which attracts | sucks toward a table and hold | maintains.

  A second substrate processing method according to the present invention is a substrate processing method for processing a substrate while rotating the substrate so that the plate surface of the substrate is in a horizontal direction, and includes a table having a plurality of upward projecting members. A supporting step of placing the substrate on the projecting member and supporting the substrate so as to form a gap between the substrate and the table; and a suction conduit having one end opened in the gap. A holding mechanism for sucking the atmosphere of the gap by a pressure adjusting device having a suction mechanism connected to the suction conduit, and sucking and holding the substrate toward the table, while rotating the substrate And a processing step of processing the substrate.

  In the first or second substrate processing method according to the present invention, the suction by the pressure adjusting device may be stopped for at least one period during the processing step.

  In the first or second substrate processing method according to the present invention, the processing step includes a plurality of steps for performing different processing on the rotating substrate, and at least one of the plurality of steps. During the process, suction by the pressure adjusting device may be stopped.

  Furthermore, in the first or second substrate processing method according to the present invention, during the processing step, the rotation speed of the substrate is equal to or higher than a predetermined rotation speed or exceeds the predetermined rotation speed. In the meantime, the suction by the pressure adjusting device may be stopped.

  A first program according to the present invention is a program executed by a control device that controls a substrate processing apparatus, and is executed by the control device so that the board surface of the substrate is along a horizontal direction. A substrate processing method for processing while rotating the substrate, wherein the substrate is placed on the projecting member of a table having a plurality of projecting members projecting upward, and a gap is formed between the substrate and the table A supporting step of supporting the substrate, an acceleration step of starting to rotate the supported substrate and accelerating the rotation speed of the substrate, and a processing step of processing the substrate while rotating the substrate. A pressure adjusting device having a suction conduit having one end opened in the gap and a suction mechanism connected to the suction conduit for at least one period during the acceleration step; Sucking the atmosphere in the gap I, characterized in that for implementing a method of processing a substrate to be processed in the substrate processing apparatus.

  The second program according to the present invention is a program executed by a control device that controls the substrate processing apparatus, and is executed by the control device so that the substrate surface is aligned along the horizontal direction. A substrate processing method for processing while rotating the substrate, wherein the substrate is placed on the projecting member of a table having a plurality of projecting members projecting upward, and a gap is formed between the substrate and the table An atmosphere of the gap is formed by a pressure adjusting device having a supporting step for supporting the substrate, a suction pipe having one end opened in the gap, and a suction mechanism connected to the suction pipe. A processing method for a substrate to be processed, comprising: a holding step for sucking and holding the substrate toward a table; and a processing step for processing the substrate while rotating the substrate. Characterized thereby performed in the substrate processing apparatus.

  A first recording medium according to the present invention is a recording medium on which a program to be executed by a control device that controls a substrate processing apparatus is recorded, and the board surface of the substrate by executing the program by the control device. Is a substrate processing method in which the substrate is rotated while being rotated along the horizontal direction, the substrate being placed on the protruding member of a table having a plurality of protruding members protruding upward, and the substrate and the substrate While supporting the substrate so as to form a gap with the table, starting the rotating the supported substrate, accelerating the rotating speed of the substrate, while rotating the substrate, A processing step for processing the substrate, and connected to the suction conduit, the suction conduit having one end opened in the gap for at least one period during the acceleration step Sucking the atmosphere in the gap by a pressure regulating device comprising a pull mechanism, and characterized in that for implementing a method of processing a substrate to be processed in the substrate processing apparatus.

  A second recording medium according to the present invention is a recording medium on which a program to be executed by a control device that controls the substrate processing apparatus is recorded, and the board surface of the substrate by executing the program by the control device. Is a substrate processing method in which the substrate is rotated while being rotated along the horizontal direction, the substrate being placed on the protruding member of a table having a plurality of protruding members protruding upward, and the substrate and the substrate A supporting step for supporting the substrate so as to form a gap between the table, a suction pipe having one end opened in the gap, and a suction mechanism connected to the suction pipe; A holding step of sucking and holding the atmosphere of the gap by a pressure adjusting device having the substrate toward the table, and a processing step of processing the substrate while rotating the substrate. It comprises, characterized in that for implementing a method of processing a substrate to be processed in the substrate processing apparatus.

BEST MODE FOR CARRYING OUT THE INVENTION

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.

  1 to 4 are diagrams for explaining an embodiment of the present invention. 1 is a longitudinal sectional view showing the substrate processing apparatus, FIG. 2 is a top view showing the substrate processing apparatus, FIG. 3 is a diagram for explaining the operation of the substrate processing apparatus, and FIG. It is a flowchart for demonstrating a processing method. FIG. 1 shows a cross section taken along line II in FIG.

  In the following embodiments, an example in which the substrate processing apparatus and the substrate processing method according to the present invention are applied to cleaning a thin semiconductor wafer (an example of a substrate to be processed) whose outer contour is substantially circular. Show. However, as a matter of course, the substrate processing apparatus and the substrate processing method according to the present invention are not limited to application to wafer cleaning.

  As shown in FIGS. 1 to 3, the substrate processing apparatus 10 is an apparatus that performs processing while rotating the substrate so that the plate surfaces (upper surface and lower surface) of the wafer W are in the horizontal direction. A disk-shaped table 15 is provided that supports the wafer W in a rotatable manner so as to form a gap (gap) G therebetween. In FIG. 2, the wafer W is indicated by a two-dot chain line.

  As shown in FIGS. 1 to 3, in other words, the table 15 includes a base plate 20 in which an opening (through hole) 20 a is formed in a portion facing the central portion Wa of the wafer W, and an opening of the base plate 20. And an elevating plate 25 disposed in the portion 20a. The elevating plate 25 is located at the center of the disk-shaped table 15 and faces the center Wa of the wafer W. The base plate 20 faces the outer portion Wb other than the central portion Wa of the wafer W.

  The base plate 20 includes a plate member 24 and a plurality of protruding members 22 provided on the upper surface 24 a of the plate member 24. In the example shown in FIG. 2, three protruding members 22 are arranged on the circumference centered on the center of the disk-shaped table 15 at substantially equal intervals. The protruding member 22 that protrudes upward from the plate member 24 of the base plate 20 includes a support portion 22a that comes into contact with the wafer W from below at the periphery of the wafer W, and a restriction portion that extends further upward than the support portion 22a. 22b. The support portion 22a comes into contact with the wafer W from below, so that the wafer W can be supported on the base plate 20 (table 15). The height h of the support portion 22a can be set to, for example, about 1 mm to 10 mm. In this case, the pressure fluctuation in the gap G can be easily generated as described later. Further, as shown in FIG. 2, the restricting portion 22 b is disposed horizontally outward from the support portion 22 a, and as shown in FIGS. 1 and 3, the peripheral edge of the wafer W placed on the support portion 22 a. It comes to be located outside the horizontal direction of the part. For this reason, the restricting portion 22b can restrict the movement of the wafer W placed on the support portion 22a in the horizontal direction.

  The elevating plate 25 has a main body portion 29 having an upper surface that is inclined downward toward the center of the disk-shaped table 15, and lift pins 27 that are provided on the peripheral edge of the main body portion 29 and project upward. is doing. In the example shown in FIG. 2, three lift pins 27 are arranged at substantially equal intervals on the circumference centered on the center of the disk-shaped table 15.

  As shown in FIG. 1, the substrate processing apparatus 10 includes a rotary shaft member 30 that is fixedly connected to the lower surface of the base plate 20 and extends in the vertical direction, and a rotary drive mechanism 35 that is connected to the rotary shaft member 30 and rotationally drives the rotary shaft member 30. And further. As shown in the figure, the rotary shaft member 30 is formed in a cylindrical shape, and the hollow portion 30 a of the rotary shaft member 30 communicates with the opening 20 a of the base plate 20. The rotary shaft member 30 is held by a bearing 32 so as to be rotatable about an axis extending in the vertical direction. The rotation drive mechanism 35 includes a pulley 37 fixed to the rotation shaft member 30 from the outside, and a drive member (for example, a motor) 36 that applies a drive force to the pulley 37 via a drive belt 38. .

  As shown in FIG. 1, the substrate processing apparatus 10 includes a lifting shaft member 40 that is fixedly connected to the lower surface of the lifting plate 25 and extends in the vertical direction, and a lift that is connected to the lifting shaft member 40 and drives the lifting shaft member 40 to move up and down. And a drive mechanism 42. The elevating shaft member 40 extends in the hollow portion 30 a of the cylindrical rotating shaft member 30 so as to be slidable with respect to the rotating shaft member 30. Due to the lifting drive by the lifting drive mechanism 42, the lifting plate 25 is located within the opening 20a of the base plate 20 indicated by a two-dot chain line in FIG. 3 and above the base plate 20 indicated by a solid line in FIG. It is possible to move vertically between the positions.

  Further, as shown in FIG. 1, the substrate processing apparatus 10 includes a pressure monitoring device 50 capable of measuring the pressure in the gap G between the wafer W placed on the table 15 and the table 15, and a table 15. A pressure adjusting device 55 capable of adjusting the pressure of the gap G between the mounted wafer W and the table 15.

  The pressure monitoring device 50 includes a pressure measurement pipe 51 having one end opened in the gap G at a position facing the central portion Wa of the wafer W, and a pressure sensor 53 connected to the other end of the pressure measurement pipe 51. And. Here, only the both ends of the pressure measurement pipeline 51 are opened. Therefore, no airflow is substantially formed in the pressure measurement pipe 51 whose other end is substantially blocked by the pressure sensor 53. For this reason, the pressure sensor 53 can accurately measure the pressure in the region where one end of the pressure measurement pipe 51 is open, even though the pressure sensor 53 is disposed at a position away from the region. . As shown in FIG. 1, the pressure measuring pipe 51 extends through the elevating shaft member 56, and further passes through a portion of the elevating plate 25 that faces the central portion Wa of the wafer W. As a result, one end of the pressure measurement pipe 51 is opened to a portion of the gap G formed between the table 15 and the wafer W and located between the lift plate 25 and the wafer W. Become.

  On the other hand, the pressure adjusting device 55 includes a suction conduit 56 having one end opened in the gap G at a position facing the central portion Wa of the wafer W, and a suction mechanism 58 connected to the other end of the suction conduit 56. And. Here, only the both ends of the suction conduit 56 are opened. Therefore, the suction mechanism 58 can suck the atmosphere in the region where one end of the suction conduit 56 is opened, and can adjust the pressure in the region. As shown in FIG. 1, the suction pipe 56 extends through the elevating shaft member 56, and further passes through a portion of the elevating plate 25 that faces the central portion Wa of the wafer W. As a result, one end of the suction conduit 56 is opened to a portion of the gap G formed between the table 15 and the wafer W and located between the lift plate 25 and the wafer W. .

  Further, as shown in FIG. 2, in addition to the pressure measurement pipe 51 and the suction pipe 56, a gas supply pipe 45 and a processing liquid supply pipe 47 penetrate the elevating plate 25. One end of the gas supply line 45 and one end of the processing liquid supply line 47 are also located at a position facing the central portion Wa of the wafer W, similarly to one end of the pressure measurement line 51 and one end of the suction line 56. The gap G between W and the table 15 is open. The gas supply line 45 and the treatment liquid supply line 47 pass through the elevating shaft member 40, as with the pressure measurement line 51 and the suction line 56.

  The processing liquid supply pipe 47 is connected to a chemical liquid source for supplying a chemical liquid, a rinse liquid source for supplying a rinse liquid, a dry liquid source for supplying a dry liquid, and the like through a switching valve and the like.

  On the other hand, the gas supply line 45 is connected to a gas source that supplies an inert gas such as nitrogen gas. The tip (upper end) opened to the gap G of the gas supply pipe 45 is arranged at a position higher than the upper ends of the pressure measurement pipe 51, the suction pipe 56 and the processing liquid supply pipe 47. The front end (upper end) of the gas supply pipe 45 is disposed in the vicinity of the lower surface (back surface) of the wafer W placed on the base plate 20 and is formed to be tapered. For this reason, the gas supplied from the gas supply line 45 is supplied to the lower surface of the wafer W before the flow velocity decreases, that is, at a high speed.

  Further, as shown in FIG. 1, above the table 15, the surface side processing liquid supply unit 12 that supplies the processing liquid to the upper surface (surface) of the wafer W supported on the base plate 20 of the table 15 and the gas are provided. The surface side gas supply part 13 to supply is provided. The front side processing liquid supply unit 12 and the front side gas supply unit 13 are supported by a movable arm 11 that can move above the wafer W supported by the base plate 20. For example, as shown in FIG. 2, the moving arm 11 is configured to be swingable, and the surface-side processing liquid supply unit 12 and the surface-side gas supply unit 13 face the center of the wafer W from above (FIG. 2). 2), a position facing the peripheral edge of the wafer W from above, a position shifted outward from above the wafer W (solid line in FIG. 2), and the like. The surface side treatment liquid supply unit 12 is connected to a chemical liquid source for supplying a chemical liquid, a rinse liquid source for supplying a rinse liquid, a dry liquid source for supplying a dry liquid, and the like through a switching valve and the like. The surface side gas supply unit 13 is connected to a gas source that supplies an inert gas such as nitrogen gas.

  In addition, as a chemical | medical solution supplied from the process liquid supply pipe 47 and the surface side process liquid supply part 12, a dilute hydrofluoric acid, ammonia hydrogen peroxide (SC1), hydrochloric acid hydrogen peroxide (SC2) etc. can be used, for example. Further, water, particularly pure water (DIW), may be supplied as the rinse liquid from the processing liquid supply pipe 47 and the surface side processing liquid supply unit 12. Further, isopropyl alcohol (IPA) may be supplied as a drying liquid from the processing liquid supply pipe 47 and the surface side processing liquid supply unit 12.

  By the way, as shown in FIG. 1, the substrate processing apparatus 10 further includes a control device 60 that is connected to the above components and controls the components. Specifically, the control device 60 is connected to the rotation drive mechanism 35, the elevation drive mechanism 42, the pressure monitoring device 50, the pressure adjustment device 55, and the valves, and controls the operation of these devices. .

  In particular, the control device 60 according to the present embodiment is based on the pressure in the gap G measured by the pressure monitoring device 50, for example, whether or not the wafer W is placed, whether the wafer W is normal. It is configured so that it can be confirmed whether or not the wafer W is normally held. More specifically, the control device 60 determines whether or not the pressure measured by the pressure monitoring device 50 is rotating the wafer W at the time of measurement, and if it is rotated, the rotational speed ( If the unit exceeds a predetermined value determined based on at least, for example, rpm) or is equal to or greater than the predetermined value, the wafer W is not arranged or the wafer W is not normally supported or held. It is configured to determine that there is an abnormality related to the state of the wafer W.

  The control device 60 according to the present embodiment controls the suction by the pressure adjusting device 55 based on at least the rotation speed of the base plate 20 driven by the rotation drive mechanism 35 when the base plate 20 is driven to rotate. It is configured. More specifically, the control device 60 adjusts the pressure when the rotation speed of the base plate 20 driven by the rotation drive mechanism 35 is equal to or lower than a preset rotation speed or less than the preset rotation speed. The device 55 is configured to perform suction.

  The control device 60 includes an input keyboard including a keyboard used by a process manager or the like to input commands for managing the substrate processing apparatus 10, a display that visualizes and displays the operating status of the substrate processing apparatus 10, and the like. An output device is connected. Further, the control device 60 can access a recording medium 62 in which a program for realizing processing executed by the substrate processing apparatus 10 is recorded. The recording medium 62 may be a known program recording medium such as a memory such as a ROM and a RAM, a disk-shaped recording medium such as a hard disk, a CD-ROM, a DVD-ROM, and a flexible disk.

  Next, an example of a substrate processing method that can be executed using the substrate processing apparatus 10 configured as described above will be described with reference mainly to a flowchart shown in FIG. The operation of each component for executing the substrate processing method described below is controlled by a control signal from the control device 60 based on a program stored in the program recording medium 62 in advance.

  First, a wafer W to be processed is placed on the protruding member 22 of the table 15 and the wafer W is supported on the table 15 so as to form a gap G between the wafer W and the table 15 (S1). . Specifically, as shown in FIG. 3, the wafer W to be processed is brought above the table 15 by the transfer device 65. At this time, the wafer W is supported on the transfer arm 66 of the transfer device 65. Next, the lift plate 25 is raised by driving the lift drive mechanism 42 (S11). The ascending / descending plate 25 receives the wafer W from the transfer arm 66 of the transfer device 65, and supports the wafer W from below by the lift pins 27 (S12). The transfer arm 66 of the transfer device 65 transfers the wafer W to the elevating plate 25, moves outward in the horizontal direction, and retracts from the area above the table 15. Thereafter, the lift plate 25 is lowered by driving the lift drive mechanism 42 (S13). As shown in FIG. 1, the tip of the lift pin 27 of the lift plate 25 is disposed at a position lower than the tip of the protruding member 22 of the base plate 20 in a state where the lift plate 25 is lowered. Accordingly, the wafer W supported on the lift pins 27 of the lift plate 25 is supported on the protrusion member 22 of the protrusion member 22 of the base plate 20 while the lift plate 25 is lowered. In this way, the wafer W is supported on the table 15 with a gap G between the wafer W and the table 15.

  In the present embodiment, the table 15 is composed of a rotatable base plate 20 and an elevating plate 25 that can be raised and lowered. Then, the wafer W can be transferred to and from the transfer device 65 on the lift plate 25 raised from the base plate 20. According to the present embodiment, the protruding member is supported without considering the thickness t2 (see FIG. 3) of the transfer arm 65 that supports the wafer W from below and transfers the wafer W to above the table 15. The protrusion height h of 22 can be set appropriately. Therefore, the protrusion height h of the protrusion member 22 is made thinner than the thickness t2 (see FIG. 3) of the transfer arm 65, and thereby the gap G between the wafer W supported on the protrusion member 22 and the table 15 is set. Thickness t1 (see FIG. 3) can be sufficiently reduced. As a result, as will be described later, pressure fluctuations in the gap G are likely to occur, and the formation of negative pressure in the gap G can be promoted.

  Next, the wafer W placed on the table 15 is held on the table (S2). Here, “holding” means not only the action of gravity caused only by placing (supporting from below) but also the action of keeping the wafer W on the table 15 positively. It means to affect. Specifically, the pressure adjustment device 55 sucks the atmosphere in the gap G formed between the wafer W and the table 15. As can be understood from FIGS. 1 and 2, the periphery of the gap G is open. However, as described above, the thickness t1 of the gap G between the upper surface 24a of the plate member 24 of the base plate 20 constituting the periphery of the gap G and the lower surface of the wafer W can be set sufficiently thin. Therefore, by appropriately adjusting the output of the suction mechanism 58 of the pressure adjusting device 55, the pressure in the gap G below the wafer W can be lowered than the pressure above the wafer W supported on the table 15. It becomes. That is, a negative pressure is generated in the gap G, the wafer W is sucked toward the table 15, and the wafer W can be stably held.

  During this step S 2, the pressure monitoring device 50 monitors the pressure in the gap G, more strictly, the fluctuation of the pressure in the gap G in the vicinity of one end of the pressure measurement pipe 51. As described above, when the wafer W is normally supported by the support portion 22a of the protruding member 22, the thickness t1 of the gap G is sufficiently thin, and the pressure in the gap G is reduced by the suction by the pressure adjusting device 55. Can be made. The behavior of pressure fluctuation in the gap G at this time is investigated in advance and recorded in advance in the control device 60 or the recording device 62. Then, the control device 60 compares the change in pressure measured by the pressure monitoring device 50 with the behavior of normal pressure fluctuation recorded in advance during step S2 of holding the wafer W by suction.

  When the wafer W is not normally supported by the support portion 22a of the protruding member 22, the behavior of the pressure fluctuation in the gap G caused by the suction of the pressure adjusting device 55 is the same as when the wafer is normally supported. It becomes different from the behavior. In many cases, since the wafer W is not normally supported, the thickness t1 of the gap G is increased at least at a part of the peripheral edge of the wafer W, and the pressure decrease rate is slow or the pressure does not decrease. . Therefore, by monitoring the pressure fluctuation in the gap G, it is possible to accurately check whether or not the state of the wafer W, that is, whether or not the wafer W is correctly placed at a predetermined position and is normally supported. it can. If it is determined that the wafer W is not normally supported, the processing for the wafer W is stopped. On the other hand, it is confirmed that the wafer W is normally supported, and further, it is confirmed that the pressure in the gap G measured by the pressure monitoring device 50 has dropped below the predetermined pressure or below the predetermined pressure. If so, the next step S3 is executed.

  When the wafer W is held on the table 15 by suction, the base plate 20 is rotationally driven together with the wafer W by the rotational drive mechanism 35. The rotation drive mechanism 35 accelerates the rotation of the base plate 20 until the rotation speed of the base plate 20 (rotation speed of the wafer W) reaches a preset rotation speed (here, the first rotation speed) (S3). . The rotational speeds of the base plate 20 and the wafer W are measured by a rotational speed meter (not shown) connected to the control device 60. And the control apparatus 60 is monitoring the rotational speed measured with a tachometer.

  During the acceleration step S3, suction of the atmosphere in the gap G by the pressure adjusting device 55 is continuously performed. While the rotational speed of the wafer W is accelerated, abnormalities such as flapping (bounce) of the wafer W on the protruding member 22 and slipping (displacement) of the wafer W on the protruding member 22 are likely to occur. However, according to the present embodiment, the pressure in the gap G between the central portion Wa of the wafer W and the table 15 is sufficiently reduced during the acceleration step S3 in which the rotational speed of the wafer W is accelerated, and abnormal It is possible to stably hold the wafer W on the table 15 during the acceleration step S3 that is likely to occur.

  Further, when the wafer W and the base plate 20 are rotated, due to the propulsion by the unevenness (for example, the protruding member 22) on the base plate 20, friction with the upper surface of the base plate 20 or the lower surface of the wafer W, etc. The atmosphere (gas) is also rotated about the rotation axis of the base plate 20, and as a result, centrifugal force acts on the atmosphere (gas). That is, the gas in the gap G moves relative to the substrate W and the rotating table 15 radially outward from the rotation axis. Thereby, the pressure in the gap G between the wafer W and the table 15 becomes lower than the pressure above the wafer W. In particular, the pressure in the gap G at the position facing the central portion Wa of the wafer W is the lowest. Further, the higher the rotational speed of the wafer W and the base plate 20, the lower the pressure in the gap G. Further, as the thickness t1 of the gap G between the table 15 and the wafer W is thinner, the centrifugal force works more effectively on the gas in the gap G, and the pressure drop in the gap G becomes more remarkable. In this way, by increasing the rotational speeds of the wafer W and the base plate 20, the formation of the negative pressure in the gap G is promoted, and the wafer W can be more stably held on the table 15. Become.

  During the acceleration step S3, the pressure monitoring device 50 continuously monitors the pressure in the gap G. When the wafer W is normally held in the acceleration step S3, the pressure in the gap G gradually decreases as the rotational speed increases. The behavior of pressure fluctuation in the gap G at this time is investigated in advance and recorded in advance in the control device 60 or the recording device 62. Then, the control device 60 compares the change in pressure measured by the pressure monitoring device 50 with the behavior of normal pressure fluctuation recorded in advance during step S3 of accelerating the rotation speed. As a result, it is possible to accurately check the state of the wafer W, that is, whether or not the wafer W is normally held on the table 15. When it is determined that the wafer W is not normally held, the processing for the wafer W is stopped.

  On the other hand, since the pressure in the gap G decreases normally, it is confirmed that the wafer W is normally held, and the rotation speeds of the base plate 20 and the wafer W are set to a predetermined rotation speed (the first rotation speed). When the speed reaches 1 rotation speed), the next step S4 is executed.

  Note that when the rotation speeds of the base plate 20 and the wafer W reach the first rotation speed, the suction by the pressure adjusting device 55 is stopped. In other words, the control device 60 stops the suction by the pressure adjusting device 55 when the rotation speed of the base plate 20 driven by the rotation drive mechanism 35 becomes equal to or higher than the first rotation speed or exceeds the first rotation speed. However, even if the suction by the pressure adjusting device 55 is stopped, the rotation speeds of the base plate 20 and the wafer W are sufficiently high. For this reason, a sufficient negative pressure is formed in the gap G, and the wafer W can be stably kept rotating on the table.

  Next, a processing step S4 for processing the wafer W while rotating the wafer W is performed. In the present embodiment, the processing step S4 includes a chemical processing step S41 for cleaning the wafer W with a chemical solution, a rinsing processing step S42 for rinsing the chemical-treated wafer W with a rinsing liquid (pure water), and the wafer W. And a drying process step S43 for drying.

  In the chemical processing step S41, chemicals are supplied to the upper surface (front surface) and the lower surface (back surface) of the wafer W from the surface side processing liquid supply unit 12 and the processing liquid supply conduit 47, and the upper surface (front surface) and the lower surface (back surface) of the wafer W are supplied. ) Are processed simultaneously. During the chemical processing step S41, the base plate 20 and the wafer W are continuously rotated at the first rotation speed (for example, 500 rpm) by the rotation drive by the rotation drive mechanism 35.

  Next, in the rinsing process S42, the rinsing liquid is supplied to the upper surface (front surface) and the lower surface (back surface) of the wafer W from the front surface side processing liquid supply unit 12 and the processing liquid supply conduit 47, and the upper surface (front surface) of the wafer W. And the lower surface (back surface) is rinsed at the same time. During the chemical solution processing step S42, the base plate 20 and the wafer W are continuously rotated at a second rotation speed (for example, 1000 rpm) faster than the first rotation speed by the rotation drive by the rotation drive mechanism 35.

  Thereafter, the drying process step S43 is performed. As an example, the drying processing step S43 may include a replacement step and a shake-off drying step. In the replacement step, the drying liquid is supplied from the surface side processing liquid supply unit 12 and the processing liquid supply pipe 47, and the rinsing liquid (pure water) remaining on the upper and lower surfaces of the wafer W is replaced with the drying liquid. During the replacement process, the base plate 20 and the wafer W are continuously rotated at a third rotation speed (for example, 700 rpm) faster than the first rotation speed. Further, in the shake-off drying process, the inert gas is supplied from the surface side gas supply unit 13 and the gas supply line 45 while rotating the base plate 20 and the wafer W at a fourth rotation speed (for example, 1000 rpm) faster than the first rotation speed. The supplied liquid is blown off from the upper and lower surfaces of the wafer W.

  In this way, the processing step S4 is performed on the wafer W. In the present embodiment, the wafer W is held on the table 15 by the negative pressure formed in the gap G between the wafer W and the table 15 as the wafer W and the base plate 20 rotate. Only the protruding member 22 is in contact with the wafer W, and the contact area between the protruding member 22 and the wafer W can be made extremely small. Therefore, it is possible to effectively prevent the airflow around the wafer W from being disturbed while the base plate 20 is rotating. As a result, it becomes possible to process the wafer W stably held on the table 15 extremely appropriately.

  In the processing step S4, the suction of the atmosphere in the gap G by the pressure adjusting device 55 is stopped while the wafer W is rotated at a constant speed. However, during the processing step S4, the wafer W rotates at a rotation speed that is not less than the first rotation speed that is relatively high. Therefore, a sufficient negative pressure is formed in the gap G, and the wafer W can be stably held on the table 15 during the processing step S4.

  Further, during the processing step S4, the pressure monitoring device 50 continuously monitors the pressure in the gap G. In the processing step S4, when the wafer W is normally held and the wafer W and the base plate 20 are rotated at a substantially constant speed, the pressure in the gap G takes a substantially constant value. Then, the pressure in the gap G when rotating at the first to fourth rotation speeds is examined in advance and recorded in advance in the control device 60 or the recording device 62. During the processing step S4, the control device 60 compares the pressure measured by the pressure monitoring device 50 with the normal pressure recorded in advance. As a result, it is possible to accurately check the state of the wafer W, that is, whether or not the wafer W is normally held on the table 15. If it is determined that the holding state of the wafer W is not normal, the processing for the wafer W is stopped. When it is determined that the wafer W has been processed in a normally held state, the next step S5 is executed.

  Next, the rotational speeds of the base plate 20 and the wafer W that have been rotated at the fourth rotational speed are decelerated (S5). During the deceleration step S5, the atmosphere in the gap G is sucked by the pressure adjusting device 55. That is, when the rotation speed of the base plate 20 driven by the rotation drive mechanism 35 becomes equal to or lower than the fourth rotation speed or less than the fourth rotation speed, the control device 60 performs suction by the pressure adjusting device 55. For this reason, the rotational speeds of the base plate 20 and the wafer W are lowered, and even if the formation of the negative pressure in the gap G due to the rotation of the base plate 20 and the wafer W is insufficient, it is caused by the suction by the pressure adjusting device 55. Thus, a sufficient negative pressure is formed in the gap G. As a result, the wafer W is placed on the table 15 during the deceleration step S5 in which abnormalities such as flapping (bounce) on the protruding member 22 of the wafer W and slipping (displacement) on the protruding member 22 of the wafer W easily occur. It becomes possible to keep holding stably.

  Further, during the deceleration step S5, the pressure monitoring device 50 continuously monitors the pressure in the gap G. When the wafer W continues to be normally held in the deceleration step S5, the pressure in the gap G gradually decreases as the rotation speed decreases. The behavior of pressure fluctuation in the gap G at this time is investigated in advance and recorded in advance in the control device 60 or the recording device 62. Then, the control device 60 compares the pressure change measured by the pressure monitoring device 50 with the behavior of normal pressure fluctuation recorded in advance during the step S5 of decelerating the rotational speed. As a result, it is possible to accurately check the state of the wafer W, that is, whether or not the wafer W is normally held on the table 15.

  When the rotation of the base plate 20 and the wafer W is stopped, the suction by the pressure adjusting device 55 is stopped, and the deceleration step S5 is completed.

  Thereafter, the processed wafer W is discharged (S6). In the discharging step S6, first, the elevating plate 25 is raised (S61). When the elevating plate 25 moves up, the processed wafer W supported on the protruding member 22 of the base plate 20 is transferred onto the lift pins 27 of the elevating plate 25. When the elevating plate 25 supporting the wafer W rises to a predetermined position, the wafer W is transferred from the elevating plate 25 to the transfer arm 66 of the transfer device 65 (S62).

  In this way, a series of processes for the wafer W is completed. Further, the wafer W to be processed next is brought in by the transfer device 65, and the wafer W is subjected to the same processing as described above.

  According to the present embodiment as described above, the wafer W is moved to the table side by the negative pressure formed in the gap G between the wafer W and the table 15 when the base plate 20 and the wafer W are rotated. It can be sucked and held on the table 15. Further, the suction pipe 56 having one end opened in a gap G between the wafer W and the table 15 at a position facing the central portion Wa of the wafer W, and the other end of the suction pipe 56 are connected. A pressure adjusting device 55 having a suction mechanism 58 is provided. Therefore, when the rotation speed of the wafer W is slow, the pressure in the gap G formed between the wafer W and the table 15 can be sufficiently lowered using the pressure adjusting device 55, and thereby the wafer W Can be stably held on the table 15.

  Specifically, the pressure in the gap G between the central portion Wa of the wafer W and the table 15 is sufficiently reduced during the acceleration step S3 and the deceleration step S5 in which the rotational speed of the wafer W is accelerated, The wafer W can be stably held on the table 15 during the acceleration step S3 and the deceleration step S5 that are likely to occur. As a result, the wafer W flutters on the table 15 which tends to occur during the acceleration step S3 and the deceleration step S5 due to the thin plate shape, and the wafer W has a substantially circular outer contour. It is possible to effectively prevent the occurrence of slipping (displacement) on the table 15 of the wafer W, which is likely to occur during the acceleration step S3 or the deceleration step S5 due to having the above.

  Before the rotation of the wafer W is started, the atmosphere of the gap G between the wafer W supported on the table 15 and the table 15 is sucked by the pressure adjusting device 55, and the wafer W is sucked toward the table 15. It is also possible to hold it. In this case, the wafer W can be stably held immediately after the start of rotation of the wafer W where the wafer W is likely to flutter (bounce) on the table 15 or slip (displacement) of the wafer W with respect to the table 15. it can.

  The pressure adjusting device 55 does not come into contact with the wafer W and does not disturb the airflow around the wafer W. Therefore, appropriate processing can be performed on the wafer W held stably.

  Further, according to the present embodiment, the wafer W can be delivered on the elevating plate 25 raised from the base plate 20. In this case, the protruding height h of the protruding member 22 can be set without considering the thickness t2 of the transfer arm 66 that transfers the wafer W to the upper side of the table 15. Therefore, the protrusion height h of the protrusion member 22 can be set appropriately, and the thickness t1 of the gap G between the wafer W supported on the protrusion member 22 and the table 15 can be sufficiently reduced. As a result, a change in the pressure of the gap G between the central portion Wa of the wafer W and the table 15 is likely to occur. That is, the pressure in the gap G can be greatly reduced by rotating the wafer W or by suction by the pressure adjusting device 55. Thereby, the wafer W can be more stably held on the table 15.

  Furthermore, according to the present embodiment, the protruding member 22 has the restricting portion 22b that is positioned outward in the horizontal direction of the peripheral edge portion of the wafer W. Therefore, the movement of the wafer W placed on the support portion 22a of the protruding member 22 in the horizontal direction can be restricted by the restriction portion 22b. Thereby, the wafer W can be stably held on the table 15.

  Note that various modifications can be made to the above-described embodiment. Hereinafter, an example of modification will be described.

  For example, in the above-described embodiment, the state of the wafer W, for example, whether or not the wafer W is brought on the table 15 by the pressure in the gap G measured by the pressure monitoring device 50, and the support position of the wafer W Although an example of confirming whether or not the wafer is normal and whether or not the holding state of the wafer W is normal is shown, the present invention is not limited to this. As an example, the state of the wafer W on the table 15 may be confirmed using an optical system sensor (typically a photoelectric sensor).

  In the above-described embodiment, the example in which the suction of the atmosphere in the gap G by the pressure adjusting device 55 is performed over the entire period of the acceleration step S3 and the deceleration step S5 has been described, but the present invention is not limited thereto. The suction by the pressure adjusting device 55 may be performed only during a partial period during the acceleration step S3 or only during a partial period during the deceleration step S5. As an example, while the rotation speed of the wafer W (base plate 20) is equal to or higher than a predetermined rotation speed (for example, 400 rpm), or while the predetermined rotation speed is exceeded, the suction by the pressure adjusting device 55 is performed. It may be stopped. In such control, suction by the pressure adjusting device 55 is performed in a certain period including the start time in the acceleration step S3 and in a certain period including the end time in the deceleration step S5.

  Furthermore, in the above-described embodiment, the example in which the suction by the pressure adjusting device 55 is stopped over the entire period in the processing step S4 is shown, but the present invention is not limited to this. For example, suction by the pressure adjusting device 55 may be performed during the chemical processing step S41 in which the rotation speed of the wafer W (base plate 20) tends to be relatively low. Thereby, the wafer W can be held more stably.

  Further, in the above-described embodiment, an example in which suction by the pressure adjusting device 55 is not performed during the support step S1 is shown, but the present invention is not limited to this, and in particular, the lifting plate 25 that supports the wafer W during the support step S1. During the descent, suction by the pressure adjusting device 55 may be performed. In this case, the wafer W can be guided by suction by the pressure adjusting device 55 so that the wafer W is accurately placed at a predetermined position. In addition, during the supporting step S1, suction by the pressure adjusting device 55 is performed, and whether the wafer W is placed at a predetermined position based on a change in pressure before and after placing the wafer W measured by the pressure monitoring device 50. You may make it confirm whether or not. When the wafer W is placed on the table 15 while performing suction by the pressure adjusting device 55, the wafer W is accurately placed at a predetermined position on the table 15, and a predetermined amount is placed between the wafer W and the table 15. When the thin gap G is formed, the pressure in the gap G greatly fluctuates before and after the wafer W is placed. Therefore, based on the change in pressure measured by the pressure monitoring device 50, it can be easily and accurately confirmed whether or not the wafer W is accurately supported at a predetermined position on the table 15.

  Further, in the above-described embodiment, an example in which the control device 60 controls the presence or absence of suction by the pressure adjustment device 55 based on the rotation speed of the base plate 20 has been described, but the present invention is not limited thereto. For example, the control device 60 may control the presence or absence of suction by the pressure adjusting device 55 based on the pressure in the gap G. Specifically, when the pressure in the gap G exceeds a preset pressure or when it is equal to or higher than the preset pressure, the control device 60 may perform suction by the pressure adjusting device 55. Good.

  Furthermore, in the above-described embodiment, the example in which the table 15 includes the base plate 20 and the elevating plate 25 is shown, but the present invention is not limited to this. For example, when a transfer method is adopted in which a gap is taken to reduce the pressure in the gap G to a pressure at which the wafer W can be sucked and held on the table 15, the table 15 may be formed of a disk-shaped base plate. In this example, the pressure measurement pipe 51 extends through the rotary shaft member 30 and further passes through a portion of the disk-shaped base plate that faces the central portion Wa of the wafer W to measure the pressure. One end of the working pipe 51 may be opened to a gap G located between the disc-shaped base plate and the central portion Wa of the wafer W.

  Furthermore, in the above-described embodiment, an example is shown in which the lifting plate 25 is configured to support the wafer W from below when it is lifted. However, the present invention is not limited to this. You may be comprised so that it may adsorb | suck.

  Further, in the above-described embodiment, the gap G is formed at a position where one end of the pressure measurement pipe 51 and one end of the suction pipe 56 face the central portion (center and surroundings) Wa of the wafer (substrate) W. Although the example opened is shown, it is not restricted to this, For example, you may open | release to the clearance gap G in the periphery of center part Wa other than center part Wa.

  In addition, although the some modification with respect to embodiment mentioned above was demonstrated above, naturally, it is also possible to apply combining several modifications suitably.

  In the above description, the substrate processing apparatus according to the present invention is applied to an apparatus for cleaning the wafer W. However, the present invention is not limited to this, and the cleaning process for the LCD substrate or the CD substrate is used. In addition, the present invention may be applied to a drying process, and may be applied to various processes other than a cleaning process.

FIG. 1 is a longitudinal sectional view showing a substrate processing apparatus for explaining an embodiment according to the present invention. FIG. 2 is a top view showing the substrate processing apparatus of FIG. FIG. 3 is a view for explaining the operation of the lifting plate of the substrate processing apparatus of FIG. FIG. 4 is a flowchart for explaining an example of a substrate processing method that can be implemented by the substrate processing apparatus of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 15 Table 20 Base plate 20a Opening part 22 Protruding member 22a Supporting part 22b Control part 25 Lifting plate 30 Rotating shaft member 30a Hollow part 35 Rotation drive mechanism 40 Lifting shaft member 42 Lifting drive mechanism 55 Pressure adjusting device 56 Suction tube Path 58 suction mechanism 60 control device 62 recording means (storage means)
W substrate (semiconductor wafer)
G Gap (void)

Claims (13)

A substrate processing apparatus for processing while rotating the substrate so that the plate surface of the substrate is along the horizontal direction,
A table including a rotatable base plate having a plurality of projecting members projecting upward, wherein the projecting member contacts the substrate from below to form a gap between the substrate and the table. A supportable table;
A rotational drive mechanism for rotationally driving the base plate;
A pressure adjusting device having a suction conduit whose one end is opened in the gap, and a suction mechanism connected to the suction conduit;
A control device connected to the rotation drive mechanism and the pressure adjusting device ,
The control device is configured to control suction by the pressure adjusting device based on at least a rotation speed of the base plate by driving of the rotation drive mechanism when the base plate is driven to rotate.
The substrate processing apparatus , wherein the control device performs control to switch between suction and suction stop by the pressure adjusting device when the base plate is rotationally driven . The control device performs suction by the pressure adjusting device when the rotation speed of the base plate driven by the rotation drive mechanism is equal to or lower than a preset rotation speed or less than the preset rotation speed. performed, if it is or if the preset rotational speed or exceeds the rotational speed set in advance, so as to stop the suction by the pressure adjusting device, according to claim 1, characterized in that it is constituted 2. The substrate processing apparatus according to 1. The base plate has an opening formed at a position facing the substrate, and the table further includes a lift plate disposed in the opening of the base plate,
The substrate processing apparatus is a rotating shaft member coupled to the base plate and coupled to the rotational driving mechanism so as to be rotationally driven, and having a hollow portion communicating with the opening of the base plate. A member, an elevating shaft member that extends in the hollow portion of the rotating shaft member so as to be slidable with respect to the rotating shaft member, is connected to the elevating plate, is connected to the elevating shaft member, and the elevating shaft member is An elevating drive mechanism for elevating and driving,
The suction pipe line extends through the lifting shaft member, and one end of the suction pipe line is opened in the gap located between the lifting plate and the substrate. Item 3. The substrate processing apparatus according to Item 1 or 2 . A rotation shaft member coupled to the base plate and coupled to the rotational drive mechanism so as to be rotationally driven;
The suction pipe line extends in the rotary shaft member, and one end of the suction pipe line is opened in the gap located between the base plate and the substrate. 3. The substrate processing apparatus according to 1 or 2 . The protruding member is a support part that comes into contact with the peripheral part of the substrate from below, and a restricting part that extends further upward than the support part and is located on the side of the peripheral part of the substrate, the substrate processing apparatus according to any one of claims 1 to 4, characterized in that it comprises a. A substrate processing method of processing while rotating the substrate so that the plate surface of the substrate is along the horizontal direction,
A supporting step of placing a substrate on the projecting member of a table having a plurality of projecting members projecting upward and supporting the substrate so as to form a gap between the substrate and the table; and Acceleration process to start rotating the substrate and accelerate the rotation speed of the substrate,
A processing step of processing the substrate while rotating the substrate,
At least a period of the acceleration process, with suction and the suction conduit having one end open to the gap, a suction mechanism connected to the suction conduit, the atmosphere in the gap by a pressure regulating device with a ,
The substrate processing method , wherein suction by the pressure adjusting device is stopped for at least one period during the processing step . The suction by the pressure adjusting device during the acceleration step is performed until at least the rotation speed of the substrate becomes equal to or higher than a predetermined rotation speed or exceeds the predetermined rotation speed. 7. The substrate processing method according to 6 . A holding step for sucking the atmosphere of the gap by the pressure adjusting device and sucking and holding the substrate toward the table after the supporting step and before the accelerating step; The substrate processing method according to claim 6 , further comprising: A substrate processing method of processing while rotating the substrate so that the plate surface of the substrate is along the horizontal direction,
A supporting step of placing a substrate on the protruding member of a table having a plurality of protruding members protruding upward, and supporting the substrate so as to form a gap between the substrate and the table; A suction conduit open at one end thereof, and a suction mechanism connected to the suction conduit, and sucking the atmosphere in the gap and sucking the substrate toward the table Holding process to hold;
A processing step of processing the substrate while rotating the substrate ,
The substrate processing method , wherein suction by the pressure adjusting device is stopped for at least one period during the processing step . The processing step includes a plurality of steps of performing different processing on the rotating substrate,
At least one in one step, the substrate processing method in any of claims 6 to 9, characterized in that to stop the suction by the pressure regulating device of the plurality of processes. During the processing step, the suction by the pressure adjusting device is stopped while the rotation speed of the substrate is equal to or higher than a predetermined rotation speed or exceeds the predetermined rotation speed. Item 11. The substrate processing method according to any one of Items 6 to 10 . A program executed by a control device that controls the substrate processing apparatus,
By being executed by the control device,
A program for causing a substrate processing apparatus to execute the processing method of a substrate to be processed according to any one of claims 6 to 11 . A recording medium on which a program executed by a control device that controls the substrate processing apparatus is recorded,
By executing the program by the control device,
A recording medium that causes a substrate processing apparatus to perform the processing method of a substrate to be processed according to any one of claims 6 to 11 .

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