JP4940731B2 - Solid-state imaging device and portable imaging device - Google Patents

Solid-state imaging device and portable imaging device Download PDF

Info

Publication number
JP4940731B2
JP4940731B2 JP2006098881A JP2006098881A JP4940731B2 JP 4940731 B2 JP4940731 B2 JP 4940731B2 JP 2006098881 A JP2006098881 A JP 2006098881A JP 2006098881 A JP2006098881 A JP 2006098881A JP 4940731 B2 JP4940731 B2 JP 4940731B2
Authority
JP
Japan
Prior art keywords
imaging device
solid
state imaging
glass substrate
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006098881A
Other languages
Japanese (ja)
Other versions
JP2007273822A (en
Inventor
裕彦 伊奈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2006098881A priority Critical patent/JP4940731B2/en
Publication of JP2007273822A publication Critical patent/JP2007273822A/en
Application granted granted Critical
Publication of JP4940731B2 publication Critical patent/JP4940731B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Description

本発明は、CCDやCMOSなどの固体撮像素子を用いた固体撮像装置に関し、より詳しくは、固体撮像素子の撮像面をガラス基板に対向させてこのガラス基板に接続した、いわゆるチップオンガラス(Chip on Glass)構造の固体撮像装置に関する。   The present invention relates to a solid-state imaging device using a solid-state imaging device such as a CCD or CMOS, and more specifically, a so-called chip-on-glass (Chip) in which an imaging surface of a solid-state imaging device is opposed to a glass substrate and connected to the glass substrate. on Glass) structure solid-state imaging device.

上記のような固体撮像装置は、所要の端子が設けられたガラス基板と、該ガラス基板に対して撮像面のマイクロレンズが対向するよう配置されかつ前記ガラス基板の端子にAuバンプなどにより接続された矩形状の固体撮像素子とからなる。そして、固体撮像素子とガラス基板との間にエポキシ樹脂などの光硬化性の樹脂層を形成し接続の機械的強度を確保するとともに外部からのゴミの浸入を防止している。その際、シリコン樹脂などからなるマイクロレンズを前記樹脂層で充填すると、互いの屈折率が近似しているため、マイクロレンズの光学特性が損なわれる。そのため、マイクロレンズをガラス基板から所定の間隔をあけて対向させたうえで、マイクロレンズの設置領域を除く固体撮像素子とガラス基板との間に樹脂層を設けて密封空間を形成し、マイクロレンズをこの密封空間内に封止している。なお、この密封空間内には外気圧とほぼ同じ空気が封入されている(例えば特許文献1)。
特開平7−231074号公報
The solid-state imaging device as described above is arranged such that a glass substrate provided with necessary terminals and a microlens on the imaging surface face the glass substrate, and are connected to the terminals of the glass substrate by Au bumps or the like. And a rectangular solid-state imaging device. A photo-curing resin layer such as an epoxy resin is formed between the solid-state imaging device and the glass substrate to ensure the mechanical strength of the connection and prevent the entry of dust from the outside. At this time, if microlenses made of silicon resin or the like are filled with the resin layer, the optical properties of the microlenses are impaired because the refractive indexes of the microlenses are approximated. Therefore, after making the microlens face the glass substrate with a predetermined interval, a resin layer is provided between the glass substrate and the solid-state imaging device excluding the microlens installation area to form a sealed space. Is sealed in this sealed space. In this sealed space, air substantially the same as the external pressure is sealed (for example, Patent Document 1).
Japanese Patent Laid-Open No. 7-233104

しかしながら、固体撮像装置の使用環境における温度変化、あるいは固体撮像素子が自ら発する熱の影響などにより、密封空間内に封止された空気が膨張または収縮すると、密封空間を形成している固体撮像素子、ガラス基板および樹脂層がいずれも硬い材料で構成されているため、これら各部材に無理な応力がかかるおそれがある。そうすると、ガラス基板や固体撮像素子に歪みが発生し光学特性が低下したり、場合によっては各部材が破損したりすることが懸念される。   However, when the air sealed in the sealed space expands or contracts due to a change in temperature in the usage environment of the solid-state imaging device or the influence of heat generated by the solid-state imaging device, the solid-state imaging device that forms the sealed space In addition, since both the glass substrate and the resin layer are made of a hard material, there is a possibility that an excessive stress is applied to these members. If it does so, distortion will generate | occur | produce in a glass substrate or a solid-state image sensor, and there is a concern that an optical characteristic may fall, or each member may be damaged depending on the case.

したがって、本発明は、かかる歪みや破損が発生する心配の少ない固体撮像装置を実現することを目的とする。   Therefore, an object of the present invention is to realize a solid-state imaging device that is less likely to cause such distortion and breakage.

本発明の固体撮像装置は、所要の端子が設けられたガラス基板と、該ガラス基板に対して撮像面のマイクロレンズが所定の間隔をあけて対向するよう配置されかつ前記ガラス基板の端子に接続された固体撮像素子とを備え、前記マイクロレンズを除く前記固体撮像素子と前記ガラス基板との間に絶縁性部材を充填して前記マイクロレンズを密封空間内に封止した固体撮像装置であって、前記絶縁性部材には前記密封空間内のエアの膨張、収縮にともない該エアが出入りする開口が設けられ、前記ガラス基板から前記固体撮像素子には前記開口を跨いで架設された弾性を有する膜が設けられ、該膜により前記密封空間内のエアを密封していることを特徴とする。 The solid-state imaging device of the present invention is arranged such that a glass substrate provided with a required terminal and a microlens on the imaging surface facing the glass substrate with a predetermined interval and connected to the terminal of the glass substrate A solid-state imaging device comprising: an insulative member filled between the glass substrate and the solid-state imaging device excluding the microlens, wherein the microlens is sealed in a sealed space. The insulating member is provided with an opening through which the air enters and exits as the air in the sealed space expands and contracts, and has elasticity that spans the opening from the glass substrate to the solid-state imaging device. A film is provided, and the air in the sealed space is sealed by the film .

このようにすれば、絶縁性部材の開口が密封空間内のエアの膨張、収縮を許容可能に閉塞されているので、固体撮像装置の使用時に温度変化が生じて密封空間内のエアが膨張もしくは収縮しても、密封空間内のエアをこの開口から出入りさせることができ、ガラス基板や固体撮像素子が変形したり破損したりしにくくすることができる。また、この開口は閉塞されているので、マイクロレンズを封止する密封空間内にゴミなどが浸入するおそれがない。   In this way, since the opening of the insulating member is closed to allow the expansion and contraction of the air in the sealed space to allow, the temperature change occurs when the solid-state imaging device is used, and the air in the sealed space expands or Even if it shrinks, the air in the sealed space can enter and exit from the opening, and the glass substrate and the solid-state imaging device can be hardly deformed or damaged. In addition, since the opening is closed, there is no possibility that dust or the like enters the sealed space that seals the microlens.

なお、密封空間内のエアは、固体撮像装置の実際の使用時における外気環境に近い条件のものが好ましく、ゴミ等が極力排除された空気を、ほぼ外気圧と同じ圧力にて封止する。また、開口を閉塞する手段は、密封空間内のエアの出入りに対応できる必要があり、柔軟性のある膜で直接覆う他、例えばエアダンパーに連通させるなども考えられる。   Note that the air in the sealed space is preferably in a condition close to the outside air environment when the solid-state imaging device is actually used, and the air from which dust or the like is excluded as much as possible is sealed at substantially the same pressure as the outside air pressure. In addition, the means for closing the opening needs to be able to cope with the entry and exit of air in the sealed space. In addition to directly covering with a flexible film, for example, communicating with an air damper may be considered.

また、前記絶縁性部材の開口は弾性を有する膜により閉塞されていてもよい。この場合、弾性を有する膜の伸縮により密封空間内のエアの膨張、収縮を許容できるようになり、簡単な構成でありながら撮像面周りの部材の変形や破損を効果的に防止できる。なお、弾性を有する膜としては、例えばフィルムやゴムなどの薄い柔軟性のある材料が好ましい。   Further, the opening of the insulating member may be closed by an elastic film. In this case, expansion and contraction of the air in the sealed space can be permitted by expansion and contraction of the elastic film, and deformation and breakage of members around the imaging surface can be effectively prevented with a simple configuration. In addition, as a film | membrane which has elasticity, thin flexible materials, such as a film and rubber | gum, are preferable, for example.

また、開口の設け方としては、固体撮像素子の周縁全体を絶縁性部材で封止した後に絶縁性部材の一部に孔をあけるようにしてもよいし、また、全体を封止せず矩形状の固体撮像素子の周縁の一部分、例えば一辺のみ絶縁性部材を形成しないようにしてもよい。弾性を有する膜としては、形成、貼り付けが容易なよう、片面に粘着層が形成されたフィルムなどが好ましい。   In addition, as for the way of providing the opening, after sealing the entire periphery of the solid-state imaging device with an insulating member, a hole may be made in a part of the insulating member, or the whole shape may be rectangular without sealing. The insulating member may not be formed on only a part of the periphery of the solid-state imaging device, for example, only one side. The film having elasticity is preferably a film having an adhesive layer formed on one side so that it can be easily formed and attached.

本発明の他の固体撮像装置は、所要の端子が設けられたガラス基板と、該ガラス基板に対して撮像面のマイクロレンズが所定の間隔をあけて対向するよう配置されかつ前記ガラス基板の端子に接続された固体撮像素子とを備え、前記マイクロレンズを除く前記固体撮像装置と前記ガラス基板との間に絶縁性部材を充填して前記マイクロレンズを密封空間内に封止した固体撮像装置であって、少なくとも一部分が弾性を有する膜により囲まれたエア保持層が形成され、前記絶縁性部材には前記密封空間内のエアの膨張、収縮にともない該エアが出入りする開口が設けられ、前記密封空間は前記開口を介して前記エア保持層に連通していることを特徴とする。   In another solid-state imaging device of the present invention, a glass substrate provided with a required terminal, and a microlens on the imaging surface facing the glass substrate with a predetermined distance therebetween, and a terminal of the glass substrate A solid-state imaging device connected to the solid-state imaging device, wherein an insulating member is filled between the solid-state imaging device excluding the microlens and the glass substrate, and the microlens is sealed in a sealed space. An air holding layer surrounded by an elastic film is formed at least partially, and the insulating member is provided with an opening through which the air enters and exits as the air expands and contracts in the sealed space. The sealed space communicates with the air holding layer through the opening.

このようにすれば、エア保持層は少なくとも弾性を有する膜で囲まれて構成されているので、この弾性膜の伸縮によりエア保持層の容積は増減可能となる。そしてこのエア保持層に密封空間が連通しているので、密封空間内のエアの膨張、収縮に応じてエア保持層の容積が増減可能となり、密封空間内のエアの膨張、収縮を許容できるようになる。また、エア保持層の体積を大きくとったり、弾性膜の伸縮率を大きくとったりすることにより、エア増減の許容量が大きくなり、ガラス基板や固体撮像素子の変形や破損の心配をより一層減らすことができる。   In this way, since the air holding layer is configured to be surrounded by at least an elastic film, the volume of the air holding layer can be increased or decreased by expansion and contraction of the elastic film. Since the sealed space communicates with the air retaining layer, the volume of the air retaining layer can be increased or decreased according to the expansion and contraction of air in the sealed space, and the expansion and contraction of air in the sealed space can be allowed. become. Also, by increasing the volume of the air retention layer or increasing the elastic film's expansion / contraction rate, the allowable amount of air increase / decrease is increased, and the risk of deformation or breakage of the glass substrate or solid-state imaging device can be further reduced. it can.

なお、エア保持層の具体的形成手段としては、たとえば片面の周縁に粘着層が形成されたフィルムを用い、このフィルムを所定量の空気を取り込みつつガラス基板に貼り付けることにより、少なくともガラス基板とこのフィルムとにより囲まれたエア保持層を形成する。   As a specific means for forming the air retaining layer, for example, a film having an adhesive layer formed on the periphery of one surface is used, and this film is attached to a glass substrate while taking in a predetermined amount of air, so that at least a glass substrate and An air retaining layer surrounded by the film is formed.

以上のように、本発明の固体撮像装置によれば、絶縁性部材の開口が密封空間内のエアの膨張、収縮を許容可能に閉塞されているので、固体撮像装置の使用時における温度変化によっても、撮像面周りの部材が変形したり破損したりしにくくなり、しかも撮像面にゴミが侵入する心配もなく、優れた性能の固体撮像装置を提供することができる。   As described above, according to the solid-state imaging device of the present invention, the opening of the insulating member is closed to allow the expansion and contraction of the air in the sealed space. In addition, it is possible to provide a solid-state imaging device with excellent performance without causing the members around the imaging surface to be deformed or damaged, and without having to worry about dust entering the imaging surface.

本発明の実施の形態について、図1から図5を用いて説明する。   Embodiments of the present invention will be described with reference to FIGS.

本実施形態に係る固体撮像装置は、図1に示すような構成であり、1は所要の端子2が一主面に設けられたガラス基板、3はガラス基板1の一主面に搭載,配置されたCCDもしくはCMOSなどからなる固体撮像素子、4は固体撮像素子3の端子12とガラス基板1の端子2との間を電気的に接続するたとえばAu製バンプ、6は固体撮像素子3のマイクロレンズ5およびガラス基板1面間に密封空間7を形成する絶縁性部材としての封止樹脂層である。   The solid-state imaging device according to the present embodiment has a configuration as shown in FIG. 1, where 1 is a glass substrate on which a required terminal 2 is provided on one main surface, and 3 is mounted and arranged on one main surface of the glass substrate 1. The solid-state imaging device composed of a CCD or CMOS or the like, 4 is an Au bump for electrically connecting the terminal 12 of the solid-state imaging device 3 and the terminal 2 of the glass substrate 1, and 6 is a micro of the solid-state imaging device 3. It is a sealing resin layer as an insulating member that forms a sealed space 7 between the lens 5 and the glass substrate 1 surface.

ガラス基板1の端子2は、外部接続用電極2aと、固体撮像素子3の端子12にバンプ4を介して接続される電極2cと、これら両電極2a、2cとを接続する配線2bとからなる。   The terminal 2 of the glass substrate 1 includes an external connection electrode 2a, an electrode 2c connected to the terminal 12 of the solid-state imaging device 3 via the bump 4, and a wiring 2b that connects both the electrodes 2a and 2c. .

固体撮像素子3は、受光面にマイクロレンズ5を備えており、かつこのマイクロレンズ5の形成面を、ガラス基板1に対向させて搭載,配置してある。   The solid-state imaging device 3 includes a microlens 5 on the light receiving surface, and is mounted and arranged with the formation surface of the microlens 5 facing the glass substrate 1.

封止樹脂層6の形成は、例えば光硬化性のエポキシ樹脂を供給し、ガラス基板側から紫外線などの光を照射することにより行う。封止樹脂層6と固体撮像素子3とガラス基板1とで密封空間7を形成し、マイクロレンズ5を封止している。また、封止樹脂層6は、固体撮像素子3を機械的に強固に固定するとともに、外部からのゴミの浸入を防止している。密封空間7内には、ゴミ等を極力排除した空気が、外気圧とほぼ等しい圧力にて封止されている。   The sealing resin layer 6 is formed, for example, by supplying a photocurable epoxy resin and irradiating light such as ultraviolet rays from the glass substrate side. A sealing space 7 is formed by the sealing resin layer 6, the solid-state imaging device 3, and the glass substrate 1, and the microlens 5 is sealed. In addition, the sealing resin layer 6 mechanically and firmly fixes the solid-state imaging device 3 and prevents dust from entering from the outside. In the sealed space 7, air from which dust or the like has been removed as much as possible is sealed at a pressure substantially equal to the external pressure.

本実施の形態では、固体撮像素子3全体を覆い所定の空気を取り込んだ状態でガラス基板1に貼り付けられたフィルム10を設けることによりエア保持層8を形成しており、また、封止樹脂層6に貫通穴9を設けている。   In the present embodiment, the air holding layer 8 is formed by providing the film 10 that is attached to the glass substrate 1 while covering the entire solid-state imaging device 3 and taking in predetermined air, and the sealing resin A through hole 9 is provided in the layer 6.

フィルム10は、固体撮像素子3の大きさよりも大きく形成された略矩形状のPET等の材料からなり、固体撮像素子3を上面から覆う形で、かつ所定量の空気を取り込んでガラス基板1に外周部を貼り付け、エア保持層8を形成している。なお、フィルム10の貼り付けは予め粘着面が形成された既製品を用いることにより容易にかつ強固に貼り付けできるが、エア保持層8に外部からゴミが浸入しないように、フィルム10を貼り付けた後、フィルム10の周縁に接着剤などのシール剤11を形成して確実に密閉するのが好ましい。   The film 10 is made of a material such as a substantially rectangular PET formed larger than the size of the solid-state imaging device 3, covers the solid-state imaging device 3 from the upper surface, and takes a predetermined amount of air into the glass substrate 1. The outer peripheral portion is pasted to form the air retaining layer 8. The film 10 can be attached easily and firmly by using an off-the-shelf product on which an adhesive surface has been formed in advance, but the film 10 is attached so that dust does not enter the air retaining layer 8 from the outside. After that, it is preferable that a sealing agent 11 such as an adhesive is formed on the periphery of the film 10 to be surely sealed.

貫通穴9は、図5に示すように、固体撮像素子3の周縁部に形成した封止樹脂層6の一カ所を貫通する形で設けられており、密封空間7とエア保持層8とを連通している。なお、貫通穴9は、封止樹脂層6のいずれか一部分が開口していればよく、例えば矩形状の固体撮像素子3の一辺のみ封止樹脂層を形成しないようにしてもよいし、固体撮像素子3の周縁の所定数カ所のみ封止樹脂層6を形成するようにしてもよい。   As shown in FIG. 5, the through-hole 9 is provided so as to penetrate one place of the sealing resin layer 6 formed at the peripheral edge of the solid-state imaging device 3, and the sealed space 7 and the air holding layer 8 are formed. Communicate. The through-hole 9 only needs to be open at any part of the sealing resin layer 6. For example, the sealing resin layer may not be formed on only one side of the rectangular solid-state imaging element 3, or a solid The sealing resin layer 6 may be formed only at a predetermined number of places on the periphery of the image sensor 3.

以上の構成の固体撮像装置では、フィルム10の柔軟性によりエア保持層8は密封空間7内の気体の膨張、収縮を許容できるようになっている。そのため、固体撮像装置の使用時に温度変化が生じ、密封空間7内の空気が膨張または収縮しても、撮像面周りの部材(ガラス基板1および固体撮像素子3)が変形したり破損したりしにくくできる。また、エア保持層8は密封空間7と連通しており、外部空間とは遮断されているので、マイクロレンズ5を封止する密封空間7にゴミなどが侵入するおそれがない。   In the solid-state imaging device having the above configuration, the air holding layer 8 can permit the expansion and contraction of the gas in the sealed space 7 due to the flexibility of the film 10. Therefore, a temperature change occurs when the solid-state imaging device is used, and even if the air in the sealed space 7 expands or contracts, the members around the imaging surface (the glass substrate 1 and the solid-state imaging device 3) may be deformed or damaged. It can be difficult. Further, since the air retaining layer 8 communicates with the sealed space 7 and is blocked from the external space, there is no possibility that dust or the like enters the sealed space 7 that seals the microlens 5.

なお、本発明はもちろん、上述した実施の形態に限定されるものではなく、その他、あらゆる用途に適用可能である。   Of course, the present invention is not limited to the above-described embodiment, and can be applied to all other uses.

エア保持層8は、開口9に連通していれば他にもあらゆる形態をとることができ、またあらゆる位置に設置可能である。   The air retaining layer 8 can take any other form as long as it communicates with the opening 9 and can be installed at any position.

また、フィルム10の面積を大きくすれば、エア保持層8の容積の変化量をより大きく確保することができ、密封空間7内の空気の膨張、収縮に対してより確実に対応できるようになる。逆に、エア保持層8を設けずに貫通穴9の開口をフィルム10で閉塞するだけでも、フィルム10の伸縮効果は発揮され、密封空間7内の空気の膨張、収縮に対応することができる。   In addition, if the area of the film 10 is increased, a larger amount of change in the volume of the air holding layer 8 can be ensured, and the expansion and contraction of the air in the sealed space 7 can be dealt with more reliably. . On the contrary, even if the opening of the through hole 9 is simply closed with the film 10 without providing the air retaining layer 8, the expansion and contraction effect of the film 10 is exhibited, and the expansion and contraction of the air in the sealed space 7 can be dealt with. .

また、貫通穴9は封止樹脂層6に穴を設ける構成に限らず、例えば封止樹脂層6を貫通するダクトを別途設けても良い。   Further, the through hole 9 is not limited to the configuration in which the hole is formed in the sealing resin layer 6. For example, a duct penetrating the sealing resin layer 6 may be separately provided.

本発明は、極めて小型で使用環境による温度変化が大きい各種携帯用撮像機器に内蔵される固体撮像装置として好適である。   The present invention is suitable as a solid-state imaging device built in various portable imaging devices that are extremely small and have a large temperature change depending on the usage environment.

本発明の実施の形態に係る固体撮像装置の断面図Sectional drawing of the solid-state imaging device concerning embodiment of this invention 図1のA−A断面図AA sectional view of FIG. 同実施の形態に係る固体撮像装置のガラス基板の端子側を示す平面図The top view which shows the terminal side of the glass substrate of the solid-state imaging device which concerns on the same embodiment 同実施の形態に係る固体撮像装置の固体撮像素子の撮像面側を示す平面図The top view which shows the imaging surface side of the solid-state image sensor of the solid-state imaging device concerning the embodiment 同実施の形態に係る固体撮像装置のフィルムを除いた状態を示す平面図The top view which shows the state except the film of the solid-state imaging device concerning the embodiment

符号の説明Explanation of symbols

1 ガラス基板
2 端子
3 固体撮像素子
4 バンプ
5 マイクロレンズ
6 封止樹脂層
7 密封空間
8 エア保持層
9 貫通穴
10 フィルム
11 シール剤
12 端子
DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Terminal 3 Solid-state image sensor 4 Bump 5 Micro lens 6 Sealing resin layer 7 Sealing space 8 Air holding layer 9 Through hole 10 Film 11 Sealing agent 12 Terminal

Claims (2)

所要の端子が設けられたガラス基板と、該ガラス基板に対して撮像面のマイクロレンズが所定の間隔をあけて対向するよう配置されかつ前記ガラス基板の端子に接続された固体撮像素子とを備え、前記マイクロレンズを除く前記固体撮像素子と前記ガラス基板との間に絶縁性部材を充填して前記マイクロレンズを密封空間内に封止した固体撮像装置であって、
前記絶縁性部材には前記密封空間内のエアの膨張、収縮にともない該エアが出入りする開口が設けられ、前記ガラス基板から前記固体撮像素子には前記開口を跨いで架設された弾性を有する膜が設けられ、該膜により前記密封空間内のエアを密封していることを特徴とする固体撮像装置。
A glass substrate provided with a required terminal; and a solid-state imaging device arranged so that a microlens on the imaging surface faces the glass substrate with a predetermined interval and connected to the terminal of the glass substrate. A solid-state imaging device in which an insulating member is filled between the solid-state imaging element excluding the microlens and the glass substrate, and the microlens is sealed in a sealed space,
The insulating member is provided with an opening through which the air enters and exits as the air in the sealed space expands and contracts, and an elastic film that spans the opening from the glass substrate to the solid-state imaging device. The solid-state imaging device is characterized in that air in the sealed space is sealed by the film .
請求項1に記載の固体撮像装置を備えた携帯用撮像機器。A portable imaging device comprising the solid-state imaging device according to claim 1.
JP2006098881A 2006-03-31 2006-03-31 Solid-state imaging device and portable imaging device Expired - Fee Related JP4940731B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006098881A JP4940731B2 (en) 2006-03-31 2006-03-31 Solid-state imaging device and portable imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006098881A JP4940731B2 (en) 2006-03-31 2006-03-31 Solid-state imaging device and portable imaging device

Publications (2)

Publication Number Publication Date
JP2007273822A JP2007273822A (en) 2007-10-18
JP4940731B2 true JP4940731B2 (en) 2012-05-30

Family

ID=38676293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006098881A Expired - Fee Related JP4940731B2 (en) 2006-03-31 2006-03-31 Solid-state imaging device and portable imaging device

Country Status (1)

Country Link
JP (1) JP4940731B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6149502B2 (en) * 2013-05-16 2017-06-21 株式会社ニコン Imaging unit and imaging apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3207319B2 (en) * 1993-05-28 2001-09-10 株式会社東芝 Photoelectric conversion device and method of manufacturing the same
JP3502756B2 (en) * 1997-12-24 2004-03-02 京セラ株式会社 Optical semiconductor element storage package
JP2004342992A (en) * 2003-05-19 2004-12-02 Seiko Epson Corp Optical device, its manufacturing method, optical module, and electronic equipment
JP3981348B2 (en) * 2003-05-30 2007-09-26 松下電器産業株式会社 Imaging device and manufacturing method thereof
JP2006080181A (en) * 2004-09-08 2006-03-23 Seiko Epson Corp Semiconductor device and its manufacturing method
JP2006086672A (en) * 2004-09-15 2006-03-30 Nidec Copal Corp Imaging module

Also Published As

Publication number Publication date
JP2007273822A (en) 2007-10-18

Similar Documents

Publication Publication Date Title
JP4382030B2 (en) Semiconductor device and manufacturing method thereof
JP5329903B2 (en) Solid-state imaging device and method for manufacturing solid-state imaging device
JP4960418B2 (en) Image sensor package structure
JP4107347B2 (en) Infrared sensor and method of manufacturing infrared sensor
WO2008032404A1 (en) Semiconductor device and method for manufacturing same
US20020027284A1 (en) Solid-state image pickup device
TWI479644B (en) Image sensor module
WO2007100037A1 (en) Function element mounting module and method for manufacturing same
JP2013012745A (en) Electronic device
TW201507121A (en) Solid-state imaging device and manufacturing method thereof
JP2008016693A (en) Method of sealing solid-state imaging device
JP6067262B2 (en) Semiconductor device, manufacturing method thereof, and camera
US8986588B2 (en) Electronic device and process for manufacturing electronic device
WO2020039733A1 (en) Semiconductor device, electronic apparatus, and method for manufacturing semiconductor device
JP2008277593A (en) Circuit board, optical device employing the same, camera module, and manufacturing method for the circuit board
JP4940731B2 (en) Solid-state imaging device and portable imaging device
JP2009021307A (en) Semiconductor apparatus, imaging device, and manufacturing methods thereof
JP2009251249A (en) Wafer-like optical device and manufacturing method thereof, electronic element wafer module, sensor wafer module, electronic element module, sensor module, and electronic information apparatus
US20090145237A1 (en) Sensor packaging method for a human contact interface
TWI583618B (en) Micromechanic system and process to produce a micromechanic system
JP2009044494A (en) Imaging device
JP2007150266A (en) Solid state imaging device and its manufacturing method
JP4730135B2 (en) Image sensor package
JP5996328B2 (en) Semiconductor device
JP2007329813A (en) Solid-state imaging apparatus and imaging apparatus provided with the solid-state imaging apparatus

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090331

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20090414

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111021

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111101

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111215

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120131

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120213

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150309

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees