JP4939283B2 - リソグラフィ装置およびデバイス製造方法 - Google Patents

リソグラフィ装置およびデバイス製造方法 Download PDF

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Publication number
JP4939283B2
JP4939283B2 JP2007098988A JP2007098988A JP4939283B2 JP 4939283 B2 JP4939283 B2 JP 4939283B2 JP 2007098988 A JP2007098988 A JP 2007098988A JP 2007098988 A JP2007098988 A JP 2007098988A JP 4939283 B2 JP4939283 B2 JP 4939283B2
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liquid
barrier member
substrate
gap
space
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JP2007288185A (ja
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グラーフ，シルベスター デ
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エーエスエムエル ネザーランズ ビー．ブイ．
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007098988A 2006-04-14 2007-04-05 リソグラフィ装置およびデバイス製造方法 Active JP4939283B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/404,108 US7701551B2 (en) 2006-04-14 2006-04-14 Lithographic apparatus and device manufacturing method
US11/404,108 2006-04-14

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JP2010252668A Division JP5345996B2 (ja) 2006-04-14 2010-11-11 リソグラフィ装置およびデバイス製造方法

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JP2007288185A JP2007288185A (ja) 2007-11-01
JP4939283B2 true JP4939283B2 (ja) 2012-05-23

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JP2010252668A Active JP5345996B2 (ja) 2006-04-14 2010-11-11 リソグラフィ装置およびデバイス製造方法

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JP (2) JP4939283B2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7367345B1 (en) * 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US9477158B2 (en) * 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5029870B2 (ja) * 2006-11-13 2012-09-19 株式会社ニコン 露光方法及び装置、液浸部材、露光装置のメンテナンス方法、並びにデバイス製造方法
US9632425B2 (en) * 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
NL1036715A1 (nl) * 2008-04-16 2009-10-19 Asml Netherlands Bv Lithographic apparatus.
EP2136250A1 (en) * 2008-06-18 2009-12-23 ASML Netherlands B.V. Lithographic apparatus and method
SG159467A1 (en) * 2008-09-02 2010-03-30 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method
NL2003333A (en) * 2008-10-23 2010-04-26 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
JP2010205914A (ja) * 2009-03-03 2010-09-16 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
JP5016705B2 (ja) * 2009-06-09 2012-09-05 エーエスエムエル ネザーランズ ビー．ブイ． 流体ハンドリング構造
NL2004808A (en) * 2009-06-30 2011-01-12 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
US20110134400A1 (en) * 2009-12-04 2011-06-09 Nikon Corporation Exposure apparatus, liquid immersion member, and device manufacturing method
US9223225B2 (en) * 2010-01-08 2015-12-29 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, and device manufacturing method
NL2005951A (en) * 2010-02-02 2011-08-03 Asml Netherlands Bv Lithographic apparatus and a device manufacturing method.
NL2009472A (en) * 2011-10-24 2013-04-25 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
EP4323841A1 (en) * 2021-04-15 2024-02-21 ASML Netherlands B.V. A fluid handling system, method and lithographic apparatus

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
FR2829331B1 (fr) * 2001-09-04 2004-09-10 St Microelectronics Sa Procede de securisation d'une quantite secrete
EP1420300B1 (en) 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
SG135052A1 (en) * 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7948604B2 (en) * 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
KR101345474B1 (ko) * 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4582089B2 (ja) * 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7528929B2 (en) * 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4954444B2 (ja) * 2003-12-26 2012-06-13 株式会社ニコン 流路形成部材、露光装置及びデバイス製造方法
KR101440743B1 (ko) * 2004-01-05 2014-09-17 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101250155B1 (ko) 2004-03-25 2013-04-05 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7091502B2 (en) * 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101264939B1 (ko) 2004-09-17 2013-05-15 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4400390B2 (ja) * 2004-09-22 2010-01-20 株式会社ニコン 露光装置及びデバイス製造方法
US7251013B2 (en) * 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4622595B2 (ja) * 2005-03-11 2011-02-02 株式会社ニコン 露光装置及びデバイス製造方法
US7411654B2 (en) * 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) * 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JPWO2007055373A1 (ja) 2005-11-14 2009-04-30 株式会社ニコン 液体回収部材、露光装置、露光方法、及びデバイス製造方法
US7804577B2 (en) * 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US20090122282A1 (en) 2007-05-21 2009-05-14 Nikon Corporation Exposure apparatus, liquid immersion system, exposing method, and device fabricating method
JP2010135794A (ja) 2008-12-04 2010-06-17 Nikon Corp 露光装置、露光方法、及びデバイス製造方法

Also Published As

Publication number Publication date
US8634059B2 (en) 2014-01-21
US7701551B2 (en) 2010-04-20
US20070243329A1 (en) 2007-10-18
US20100149515A1 (en) 2010-06-17
JP5345996B2 (ja) 2013-11-20
JP2007288185A (ja) 2007-11-01
JP2011035423A (ja) 2011-02-17

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