JP4928354B2 - Manufacturing method and mounting method of ceramic parts for semiconductor manufacturing - Google Patents

Description

  The present invention relates to a manufacturing method and a mounting method for ceramic parts.

  Flat panel display manufacturing apparatuses such as semiconductor manufacturing apparatuses and liquid crystal panels are used in processes of severe corrosive environments under reduced pressure and processes in high vacuum. The equipment parts used in these processes are required to have corrosion resistance and low degassing properties. Ceramics are superior in their performance compared to metals and resins, and are therefore often used in parts for semiconductor manufacturing equipment, flat panel display manufacturing equipment such as liquid crystal panels, and chemical processing equipment.

  The reason why corrosion resistance and low degassing properties are required is that when parts are corroded or emitted gas is generated from the parts, foreign substances are released into the processing chamber, contaminating the product, and the product. This is because the yield is reduced.

In recent years, with the miniaturization of device design rules, a cleaner and higher vacuum environment in a processing chamber has become particularly desirable. It is preferable to use ceramics for device parts used in such an environment. However, when ceramics are used in such an environment, the surface of the ceramic parts may not be clean enough and the yield of processed products may be reduced. There was no method for mounting the device on a semiconductor manufacturing apparatus. In order to inspect metal contamination, an example (Japanese Patent Laid-Open No. 2005-276891) in which metal contamination excluding metal atoms constituting ceramics is treated with mixed acid on the surface of the component and inductively coupled plasma-mass analysis is shown. It is not suitable for state analysis on the presence of carbon in the depth direction of the surface. In addition, the sensitivity of the carbon element in the fluorescence X analysis, which is a non-destructive analysis, is low, and it is not suitable for analyzing the state of a small amount of carbon, and it is considered that it is difficult to apply this method to manufacturing and mounting methods. .
JP 2005-276891 A

Further, JP-A-2002-356387 discloses that a plasma-resistant member is formed from an alumina base material, an intermediate layer, and a surface layer having a porosity of 0.1% or less). And the surface roughness (Ra) is processed to 0.01 μm or less, and it is also described that the sintered body is put in an atmospheric furnace heated to 400 ° C. for 10 minutes after sintering. Yes. However, as to whether it can be used as a ceramic part for semiconductor manufacturing equipment under a reduced pressure environment, performance could not be confirmed, and quality assurance from a contaminated surface could not be performed. In addition, a method for manufacturing the ceramic component that gives a guarantee in terms of quality has not been established.
JP2002-356387

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and it is a ceramic component used in a reduced pressure environment, and an object of the present invention is to manufacture a ceramic component for a semiconductor manufacturing apparatus that is less contaminated with organic matter and to mount the ceramic component. To do.

In order to solve the above-described problems, the present invention provides a semiconductor manufacturing method comprising a ceramic sintered body having a sintered body density of 98% or more, and having a surface roughness Ra of 1 μm or less of at least a main surface exposed in a processing chamber of a semiconductor manufacturing apparatus. A method for producing a non-fouling ceramic part for an apparatus , comprising a cleaning liquid containing at least one of an aromatic hydrocarbon compound and a nonionic surfactant, wherein the concentration of the aromatic hydrocarbon compound is 5 to 10 A cleaning step of cleaning the surface of the ceramic component by immersing the ceramic component in a cleaning solution having a nonionic surfactant concentration in the range of 10% by mass and 10 to 20% by mass ; and 400 to 700 ° C. test and heating treatment the ceramic component in the temperature range, at a depth of at 5nm deeper from the ceramic part of the surface I by the X-ray photoelectron spectroscopy Is the carbon amount is to provide a method for producing a non-contaminating ceramic parts for semiconductor manufacturing apparatus characterized by comprising a step, the to ensure that at most 5 mass%.

In order to solve the above-described problems, the present invention provides a semiconductor manufacturing method comprising a ceramic sintered body having a sintered body density of 98% or more, and having a surface roughness Ra of 1 μm or less of at least a main surface exposed in a processing chamber of a semiconductor manufacturing apparatus. A method for mounting non-contaminating ceramic parts for a device , which is a cleaning liquid containing at least one of an aromatic hydrocarbon compound and a nonionic surfactant, and the concentration of the aromatic hydrocarbon compound is 5 to 10 A cleaning step of cleaning the surface of the ceramic component by immersing the ceramic component in a cleaning solution having a nonionic surfactant concentration in the range of 10% by mass and 10 to 20% by mass ; and 400 to 700 ° C. a step of heat-treating the ceramic parts in the temperature range of engineering storing the ceramic part in a closed container filled with a vacuum or in an inert gas When a step of unsealing the container in a clean room with a class 1000 or cleanliness, the amount of carbon to be detected at a depth of at 5nm deeper from the ceramic part of the surface I by the X-ray photoelectron spectroscopy 5 mass% A method for mounting a non-contaminating ceramic component for a semiconductor manufacturing apparatus , comprising the step of mounting the ceramic component on a semiconductor manufacturing apparatus after confirming the following is provided.

ADVANTAGE OF THE INVENTION According to this invention, the method of manufacturing the ceramic component for semiconductor manufacturing apparatuses with few scattered carbon amounts in a pressure-reduced environment, and the method of mounting | wearing this are implement | achieved.

Hereinafter, embodiments of the present invention will be described in detail. Non-contamination for semiconductor manufacturing equipment, characterized by measuring in the depth direction of the surface with ESCA and mounting the semiconductor manufacturing equipment in a state where the amount of carbon detected at a depth of 5 nm or less from the surface is 5 mass% or less. 2. The non-contaminating property for a semiconductor manufacturing apparatus according to claim 1, wherein the surface roughness of the main surface exposed in the processing chamber of the conductive ceramic component and the processing chamber of the semiconductor manufacturing apparatus is Ra 1 μm or less in surface smoothness. A method for mounting ceramic parts is provided.

In ceramic parts used in a reduced pressure environment, the cause of contamination of the processed material is caused by organic components present on the surface of the ceramic. Specifically, it exists on the surface by placing the ceramic in a reduced pressure environment. Phenomenon caused by scattering of organic components to the processing chamber. In particular, the higher the temperature, the easier it is to scatter. This is because the pressure in the processing chamber is reduced, so that the obstacle to trap the organic matter scattered from the ceramic surface is reduced, so that the processing chamber is likely to adhere to the processing chamber. If the organic matter adheres to the processed material, there is a risk of hindering the formation of fine wiring.

Conventionally, there has been no means for quickly and surely determining the effects of these various manufacturing methods and mounting them on a semiconductor manufacturing apparatus. This is because even if the sintered body density and surface smoothness are ceramic parts having predetermined values in the intermediate process of manufacture, the suitability changes in the subsequent cleaning process or the like. However, by using a predetermined manufacturing method or mounting method, the amount of organic matter deposited on the ceramic surface is reduced, and the carbon contained in the organic matter is specified in the depth direction from the surface, so that it can be properly manufactured and mounted. Can do.

The amount of organic matter deposited on the ceramic surface was evaluated by the amount of carbon detected at a depth of 5 nm or more by ESCA. The reason why the depth of carbon is 5 nm or more is that the amount of carbon detected on the surface is likely to be an added value because organic substances present in the measurement chamber may adhere to the measurement sample during ESCA measurement. It is because it does not become. A ceramic component in which carbon is detected at 5 mass% or more even at a depth of 5 nm or more causes contamination of the device when mounted on a semiconductor manufacturing apparatus. In other words, it can be said that organic substances that can be scattered are accumulated. On the other hand, when measured by ESCA, a ceramic part having an organic carbon content detected at a depth of 5 nm or less and having a mass of 5 mass% or less can be safely used as a component for semiconductor manufacturing equipment.

Carbon derived from organic substances has various distributions near the surface pole shallower than 5 nm, but attenuates or shows a constant value at depths of 5 nm or more. As a result of measuring the carbon detection amount in the depth direction by ESCA for various aluminum nitride sintered body samples (sintered body density of 98% or more), the detected carbon amount is 5 nm deep, regardless of the amount of organic matter attached. It increases or decreases and changes in various ways. This reflects that organic substances existing in the measurement chamber adhere to the measurement sample at the time of ESCA measurement, and the adhesion state of the organic substances varies from the surface to 5 nm. However, the non-contaminating sample having a low possibility of contaminating the processing chamber has a carbon content of 5 nm or less at 5 mass% or less, and the value is maintained or attenuated, and an increasing sample was not recognized. On the other hand, it was found that the sample having a possibility of contamination had a carbon content at a depth of 5 nm or more larger than 5 mass%.

Here, ESCA is an analysis method for irradiating soft X-rays on a solid surface placed in an ultra-high vacuum and measuring the kinetic energy of photoelectrons emitted from the surface by the photoelectric effect. Since the escape depth of the photoelectrons is several nm, information on atoms and molecules constituting a layer close to the outermost surface of the solid can be obtained.

The main specifications of the X-ray photoelectron spectrometer used in the present invention are MgKα, AlKα, and monochromatic X-ray (Al) as the X-ray source, and the measurement area of the sample can be measured in a 3 mm diameter circle region. The one having a chamber was used. The detection element is carbon (1s orbital).

As the carbon measurement method, analysis in the depth direction was performed by an ion etching method using argon ions together. The depth was calibrated by ion etching rate and time. The calculation of the adsorbed carbon concentration (mass%) was performed by semi-quantitative analysis by specifying a carbon element derived from an organic substance from a position near a binding energy of 284 eV. Carbon derived from organic matter is attributed to adjacent elements (carbon, hydrogen, oxygen, etc.). Specifically, the area of the assigned and specified carbon peak is calculated, and the ratio to the peak area of the standard element is calculated. An internal standard or external standard method can be used as a standard. For example, a ratio based on the peak area of a known amount of yttrium was calculated and multiplied by the relative sensitivity coefficient.

The present invention can also be applied to carbide ceramic parts. For example, the bulk carbon of carbon carbide parts and the carbon derived from organic matter have a chemical shift in the signal because the bond energy differs depending on the element and number of adjacent atoms. This is because the peak of the carbon signal can be separated as an organic substance-derived peak by electrical signal processing or a curve resolver, and the area of the peak can be measured.

As ceramic parts, alumina, aluminum nitride, silicon carbide, silicon nitride, cordierite, yttrium oxide, YAG, and the like are preferable. Further, any of these may be used as a main component, and a sintering aid for densification, or a subcomponent may be added to optimize electrical characteristics such as volume resistance and dielectric constant.
The sintering method can be selected from known methods suitable for the raw material powder, such as air or atmosphere firing, hot press firing, HIP, and the like. The sintered body may be a single ceramic body or a ceramic body such as an electrostatic chuck or heater embedded with metal.

The sintered body density (relative density) of the ceramic component is desirably 98% or more, and the surface roughness of the main surface exposed in the processing chamber of the semiconductor manufacturing apparatus is desirably Ra1 μm or less. Ceramic parts that do not satisfy the sintered body density of 98% tend to accumulate organic substances that can be a contamination source in pores, and organic substances that have accumulated in the pores and are firmly fixed are difficult to remove completely even by heating. It is not suitable as a component for semiconductor devices. Furthermore, when the surface roughness of the main surface exposed in the processing chamber of the semiconductor manufacturing apparatus is Ra 1 μm or less, it is difficult for organic substances to adhere, cleaning becomes easy, and organic substances are easily removed during heating. As a result, a component with less organic matter and less risk of contamination due to the detachment of the organic matter is realized.

The cleaning process for cleaning the surface deposit is to immerse in a cleaning liquid using an aromatic hydrocarbon compound and / or a nonionic surfactant. The surface deposit is mainly an organic component, and examples thereof include grinding oil and an adhesive for fixing the member during processing.

The cleaning liquid used is an aromatic hydrocarbon compound and / or a nonionic surfactant. In general, an anionic surfactant is used as a ceramic cleaning solution. However, according to studies by the present inventors, it has been found that a hydrophilic substance such as an anionic surfactant tends to remain on the surface. This is because the anionic surfactant is bonded to the hydrophilic group on the ceramic surface. Of the ceramic members, not only oxide ceramics, but also non-oxide ceramics, the vicinity of the surface is usually oxidized, and OH groups are formed due to hydrophilicity. Therefore, the OH group and the anionic surfactant are combined to remain as an organic component residue, and this residue becomes a contaminant in the manufacturing apparatus.

On the other hand, since the aromatic hydrocarbon compound and nonionic surfactant of the present invention do not bind to the hydrophilic group on the ceramic surface, it is difficult to remain as a residue, and more effective through a subsequent heating step. Organic components can be removed.

The aromatic hydrocarbon compound is a monocyclic or bicyclic aromatic compound and a compound containing an alkyl substituent thereof, and examples thereof include alkylbenzene, naphthalene, alkylnaphthalene, indane, and alkylindan. Of these, alkylbenzene, naphthalene and alkylnaphthalene are preferable. These may be used alone or in combination of two or more as required.

Specific examples of nonionic surfactants include polyalkylene glycol ether type nonionic surfactants such as polyoxyalkylene alkyl ethers and polyoxyalkylene phenol ethers, polyalkylene glycol monoesters, polyalkylene glycol diesters and the like. Alkylene glycol ester type nonionic surfactants, alkylene oxide adducts of fatty acid amides, polyhydric alcohol type nonionic surfactants such as sorbitan fatty acid esters, sucrose fatty acid esters, fatty acid alkanolamides, polyoxyalkylene alkylamines, etc. Can give. You may use these individually or in mixture of 2 or more types.

As the cleaning liquid, either an aromatic hydrocarbon compound or a nonionic surfactant, or a mixture of both may be used without dilution or diluted with water or alcohol. However, since an aromatic hydrocarbon compound or a nonionic surfactant alone may remain on the ceramic surface, it is desirable to use it diluted. The concentration of the cleaning liquid is preferably 5 to 10% by mass for the aromatic hydrocarbon compound and 10 to 20% by mass for the nonionic surfactant. If it is at least the upper limit, there is a high possibility that the cleaning liquid will remain, and if it is at most the lower limit, the cleaning effect cannot be expected.

It is also preferable to perform acid cleaning in the cleaning step. The type of acid is not particularly limited, such as hydrofluoric acid, nitric acid, and sulfuric acid. The optimum amount of acid is 3 to 7% by mass.

The atmospheric heating is preferably performed at 400 to 700 ° C, more preferably 500 to 700 ° C. This is because at a temperature lower than 400 ° C. or 500 ° C., an organic substance having a large molecular weight is hardly carbonized and scattered. For example, if the temperature of the heat treatment is lower than 400 ° C. or 500 ° C., the organic component and the metal component cannot be sufficiently removed, and the remaining organic component that cannot be washed out becomes a color spot due to heating. Problem arises. Moreover, it is difficult to sufficiently remove the organic component even if only the heat treatment is performed without going through the cleaning step. Therefore, in the above-described cleaning step, the fixed organic component is removed, and further the heating step is performed, whereby the amount of carbon detected at a depth of 5 nm or more from the surface by ESCA can be set to 5 mass% or less.

Regarding the treatment at a temperature exceeding 500 ° C., it is desirable that the temperature of the ceramic is not modified by heating in the atmosphere. If surface modification is desired by atmospheric heating, the upper limit is the treatment temperature at which the modification is not impaired. Usually, 700 ° C. is the upper limit. Moreover, it is preferable that heating time is 30 minutes or more. If it is less than 30 minutes, even if the vaporization temperature is sufficient, kinetic energy exceeding the adsorption energy of the surface may not be supplied. Moreover, there is a risk of being re-trapped by a structure having pores near the surface. Heating under reduced pressure is also effective for shortening the time.

By manufacturing the ceramic parts through the cleaning process and heating process, the amount of carbon detected at a depth of 5 nm or less from the surface by ESCA is 5 mass% or less, thereby producing a semiconductor with a small amount of scattered carbon in a reduced pressure environment. A method of manufacturing a ceramic part for an apparatus is realized.

In order to store the sample after the heat treatment, it is desirable to store it in a sealed atmosphere having a moisture content of 10 mg / m 3 or less. This is because if moisture adheres to the ceramic component and the moisture is transferred to the wafer, the fine processing in semiconductor manufacturing is affected.

As the inert gas, argon, helium, neon, krypton, xenon, or nitrogen can be used, but nitrogen or argon is preferable in terms of handling and cost. An active gas such as oxygen may react with the material on the adsorption surface and cause a chemical change during transportation. The inert gas may be a mixed gas of these, particularly a mixed gas of nitrogen and argon.

The purity of the inert gas is preferably 99.5% or more. If the purity of the gas is lower than 99.5%, it may be affected by moisture and organic substances contained in the impurities, but if it is 99.5% or more, the deterioration of the characteristics of the ceramic parts due to the influence of the impurities will not occur. However, the higher the purity of the inert gas, the better, and 99.9% or more is more desirable. Therefore, it is more preferable that the inert gas to be sealed be filled with a high-purity gas such as liquid nitrogen, but there is no problem if the gas supplied from a cylinder such as a semiconductor gas satisfies the above conditions.

As the sealed container, an acrylic plate incorporating an O-ring is drawn up into a container shape, or a gas barrier bag having low permeability to moisture and organic matter can be used. Containers joined with an adhesive have a low hermeticity, and moisture and organic matter in the atmosphere may be mixed even when sealed with an inert gas. In addition, normally available polyethylene or nylon bags have high moisture and organic permeability, and there is a risk that moisture in the atmosphere will be mixed in. Therefore, it is desirable to use these gas barrier bags with low permeability. However, the container is not limited to these containers, as long as it can prevent mixing of moisture and organic substances. For moisture, it is more effective to put a moisture absorbent material such as silica gel inside the container.

The conventional method of making the inside of the bag in a vacuum state has a problem that moisture or organic matter remains because the degree of vacuum cannot be sufficiently increased, or organic matter or the like is mixed because a bag considering moisture permeability is not used. there were. The amount of organic molecules remaining in vacuum is very small, but there are few obstacles other than organic molecules present in the bag, so there are few obstacles, the mean free path of the molecules is extended, and the adhesion of organic molecules to the ceramic parts is atmospheric pressure. More likely to occur below. Therefore, it is desirable to enclose an inert gas rather than a vacuum state.

The opening of the sample is desirably performed in a sealed clean room having a cleanness of class 1000 or higher, a temperature of 19 to 25 ° C., and a humidity of 65% or less. In particular, when the humidity exceeds 65%, the condition of moisture held in the storage container is broken, and there is a risk of forming a substrate that promotes contamination.

By passing through the storage process and the unsealing process of such ceramic parts, the carbon amount detected at a depth of 5 nm or less from the surface by ESCA is mounted on the semiconductor manufacturing apparatus while maintaining a state of 5 mass% or less. Therefore, a method of mounting ceramic parts for semiconductor manufacturing equipment with a small amount of scattered carbon in a reduced pressure environment is realized.

Hereinafter, a test example will be shown and described.
For silicon carbide, alumina, aluminum nitride, yttrium oxide, YAG sintered body having a sintered body density (relative density) of 98% or more, surface grinding using an abrasive slurry mixed with water and grinding oil, using an oily slurry All lapping was performed to form a surface with a surface roughness Ra of 1.0 μm or less. The dimensions were 50 × 50 × 5 mm, respectively, and the surface roughness of the sintered body was measured based on JISB0601.

Cleaning after processing was performed using the following method. These are respectively (A) to (E).
(A) After ultrasonic cleaning with methanol for 10 minutes, immersion cleaning was performed for 30 minutes with a cleaning liquid using a xylene-based aromatic hydrocarbon compound. Next, immersion cleaning with methanol was performed for 30 minutes, nitric acid (2%) cleaning was performed for 1 minute, flushing with ultrapure water was performed for 5 minutes, and drying was performed with a dryer.
(B) Using a fatty acid alkanolamide type nonionic surfactant, cleaning was performed in the same manner as in (A) except that the immersion cleaning time was 40 minutes.
(C) Using a polyoxyethylene alkyl ether type nonionic surfactant, cleaning was performed in the same manner as in (A) except that the immersion cleaning time was 20 minutes.
(D) (A) except that a cleaning agent in which a xylene-based aromatic hydrocarbon compound and a fatty acid alkanolamide type nonionic surfactant were mixed at a ratio of 2: 1 was used and the immersion cleaning time was 30 minutes. Washing was performed in the same manner.
(E) Cleaning was carried out in the same manner as in (A) except that a linear alkylbenzene anionic surfactant was used and the immersion cleaning time was 30 minutes.

After the washing, heat treatment was performed, and the carbon content of 5 μm or more from the sample surface was measured by ESCA.
Furthermore, it put in the vacuum chamber which set | placed Si wafer, and measured the contamination degree to Si wafer. That is, the sample was placed on a ceramic heater in a vacuum chamber, and a Si wafer was placed beside the sample. In this state, the sample and the Si wafer were heated at 200 ° C. for 6 hours at a vacuum degree of 1 × 10 ⁻¹ Pa, and the treated Si wafer surface was analyzed by ESCA to measure the amount of carbon derived from the adsorbed organic matter. This is a simulation of a semiconductor manufacturing process under reduced pressure. The amount of carbon adhering to the Si wafer surface was also evaluated at a depth of 5 nm or more from the surface, and an untreated bare wafer was measured as a comparison. The carbon amount was measured at 10 points for each of the sample and the wafer, and the average was calculated. The evaluation of the organic matter adhered to the wafer was a relative value when the carbon amount of the bare wafer was 1, and 1 or more and less than 3 was evaluated as ◯, 3 or more and less than 10 as Δ, and 10 or more as ×.

In the test examples in which A to D were used as cleaning methods and heat-treated at 500 ° C., the amount of carbon was small and the contamination of the wafer was small in any of alumina, silicon carbide, aluminum nitride, yttrium oxide, and YAG. In the test example using the cleaning method E, the amount of carbon was relatively large and the wafer was contaminated. In the test example in which D was used as the cleaning method and the firing temperatures were 400 ° C. and 700 ° C., the amount of carbon was slightly higher at 400 ° C. than at 500 ° C., and the non-contamination property was not sufficient. In the 700 ° C. treatment, the amount of carbon was small and the contamination of the wafer was small.

Next, among those for which good evaluation was obtained by the above test, those subjected to the washing and heating steps of Test Examples 4, 11, 18, 25 and 32 were subjected to storage and opening tests. After washing and heat treatment, (a) after being stored in a sealed container filled with nitrogen gas, it was opened in a clean room having a cleanness of class 1000 or higher, temperature 19 to 25 ° C. and humidity 65% or lower. (B) Same as (a) except that it is opened in an indoor environment where temperature and humidity are not controlled, and (c) It is left in an indoor environment where temperature and humidity are not controlled (Table 2) In FIG. 2, the carbon content was measured in the same manner as the ESCA measurement shown in Table 1. The storage or leaving time was 10 days.

After the sample is put in a sealed container, nitrogen gas is sealed and stored, the sample of condition (i) opened in a clean room has a low carbon content in any of alumina, silicon carbide, aluminum nitride, yttrium oxide, and YAG. And did not contaminate the wafer. Conditions B and C both had a large amount of carbon, and wafer contamination was particularly severe in Condition C left indoors.

  The present invention is suitable for a manufacturing method and a mounting method of a ceramic component for semiconductor manufacturing used under a reduced pressure environment.

Claims (2)

A method for producing a non-contaminating ceramic component for a semiconductor manufacturing apparatus, comprising a ceramic sintered body having a sintered body density of 98% or more and having a surface roughness Ra of 1 μm or less at least on a main surface exposed in a processing chamber of a semiconductor manufacturing apparatus. There,
A cleaning liquid containing at least one of an aromatic hydrocarbon compound and a nonionic surfactant, wherein the concentration of the aromatic hydrocarbon compound is in the range of 5 to 10% by mass, and the nonionic surfactant A cleaning step of cleaning the surface of the ceramic component by immersing the ceramic component in a cleaning solution having a concentration of 10 to 20% by mass ;
Heating the ceramic component in a temperature range of 400 to 700 ° C .;
The semiconductor manufacturing apparatus characterized by comprising a step of confirming that the amount of carbon detected by the depth from the surface in 5nm deeper of the ceramic component I by the X-ray photoelectron spectroscopy is less than 5 mass%, the For manufacturing non-contaminating ceramic parts. A method for mounting a non-contaminating ceramic component for a semiconductor manufacturing apparatus, comprising a ceramic sintered body having a sintered body density of 98% or more and having a surface roughness Ra of 1 μm or less at least on a main surface exposed in a processing chamber of the semiconductor manufacturing apparatus. There,
A cleaning liquid containing at least one of an aromatic hydrocarbon compound and a nonionic surfactant, wherein the concentration of the aromatic hydrocarbon compound is in the range of 5 to 10% by mass, and the nonionic surfactant A cleaning step of cleaning the surface of the ceramic component by immersing the ceramic component in a cleaning solution having a concentration of 10 to 20% by mass ;
Heating the ceramic component in a temperature range of 400 to 700 ° C .;
Storing the ceramic parts in a vacuum or in an airtight container filled with an inert gas;
Opening the container in a clean room having a cleanliness of class 1000 or higher ;
Step in which the carbon amount detected at a depth of the surface from 5nm deeper of the ceramic component I by the X-ray photoelectron spectroscopy is attached to the semiconductor manufacturing apparatus the ceramic component after confirming that or less 5 mass% And a method for mounting a non-contaminating ceramic component for a semiconductor manufacturing apparatus.