JPH05319965A - Method for metallizing base of sintered material of aluminum nitride - Google Patents
Method for metallizing base of sintered material of aluminum nitrideInfo
- Publication number
- JPH05319965A JPH05319965A JP12654792A JP12654792A JPH05319965A JP H05319965 A JPH05319965 A JP H05319965A JP 12654792 A JP12654792 A JP 12654792A JP 12654792 A JP12654792 A JP 12654792A JP H05319965 A JPH05319965 A JP H05319965A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- metallized film
- base
- sintered material
- organic substances
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明ははんだ、あるいはろう付
けのために窒化アルミニウム焼結体基板に行うメタライ
ズ方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of metallizing an aluminum nitride sintered body substrate for soldering or brazing.
【０００２】[0002]
【従来の技術】近年、ＬＳＩ等の半導体部品における集
積度が高くなり、これに伴い単位面積当たりの発熱量が
増大してきており、これを有効に冷却するために金属並
の熱伝導性を有する窒化アルミニウム基板が注目を集め
一部実用化されている。この窒化アルミニウム基板はは
んだあるいはろう付けにより、部品を固着あるいは内部
に封止するためのメタライズ膜をその表面に形成させて
使用する場合が多い。ここで形成されるメタライズ膜
は、その役割からいって以下に示す３層を順番に形成す
ることにより、構成するのが通例である。すなわち、第
１は「接着層」であり、窒化アルミニウムとメタライズ
層間を接着するものである。この接着層としては、通常
活性金属が用いられ、窒化アルミニウムの場合はチタン
が用いられる場合が多い。2. Description of the Related Art In recent years, the degree of integration in semiconductor parts such as LSI has increased, and along with this, the amount of heat generated per unit area has increased, and in order to cool this effectively, it has thermal conductivity comparable to that of metals. Aluminum nitride substrates have attracted attention and have been partially commercialized. This aluminum nitride substrate is often used by forming a metallized film on its surface for fixing or sealing the inside of the component by soldering or brazing. The metallized film formed here is usually constituted by sequentially forming the following three layers in view of its role. That is, the first is an "adhesive layer", which adheres aluminum nitride to the metallized layer. As the adhesive layer, an active metal is usually used, and in the case of aluminum nitride, titanium is often used.
【０００３】第２は「バリア層」であり、はんだあるい
はろう付けの反応・拡散を抑止するものである。このバ
リア層としては、ニッケルや白金等が用いられる。第３
は「表面保護層」であり、下地のバリア層の表面酸化を
防止すると共に、はんだ等の濡れ性を保証する。この表
面保護層としては貴金属、特に金を用いることが多い。
このようなメタライズ膜は物理蒸着法、すなわち真空蒸
着法、イオンプレーティング法、スパッタリング法など
で形成されることが多い。また表面保護層としての金膜
の形成には湿式メッキ法が用いられる場合もある。The second is a "barrier layer" which suppresses reaction / diffusion of solder or brazing. Nickel, platinum or the like is used for this barrier layer. Third
Is a "surface protective layer", which prevents surface oxidation of the underlying barrier layer and guarantees wettability of solder or the like. A noble metal, especially gold, is often used as the surface protective layer.
Such a metallized film is often formed by a physical vapor deposition method, that is, a vacuum vapor deposition method, an ion plating method, a sputtering method, or the like. A wet plating method may be used to form the gold film as the surface protective layer.
【０００４】[0004]
【発明が解決しようとする課題】上記のメタライズ膜を
形成するに当たり、従来以下に示す問題があった。 （１）窒化アルミニウム基板はメタライズ膜形成に至る
まで機械加工等の複雑な前工程を経るのが普通であり、
このため基板表面に有機物系の異物、汚れが付着してい
る場合が多い。 （２）有機物が付着している基板上にメタライズ膜を形
成した場合、窒化アルミニウムとメタライズ膜の界面に
剥離が生じ、メタライズ膜の密着強度にかかわる信頼性
の劣化につながる。In forming the above metallized film, there have been the following problems in the prior art. (1) The aluminum nitride substrate usually undergoes complicated pre-processes such as machining until the metallized film is formed.
For this reason, in many cases, organic foreign matter and dirt adhere to the surface of the substrate. (2) When a metallized film is formed on a substrate to which an organic substance is attached, peeling occurs at the interface between aluminum nitride and the metallized film, leading to deterioration in reliability related to the adhesion strength of the metallized film.
【０００５】（３）有機物を除去するために、メタライ
ズ膜を形成する前処理として、有機溶剤を用いた超音波
洗浄が従来用いられているが、多大な工数が必要な上に
基板表面の凹凸部に埋まった有機物の完全除去は困難な
場合が多い。さらに近年は有機物の溶解・除去に有効で
あった塩素系溶剤の使用が極度に制限される社会的環境
になりつつある。 本発明の目的は、上記問題点に鑑み窒化アルミニウム基
板に付着した有機物を基板自体の特性を劣化することな
く、また有害な溶剤を用いずに効率よく除去でき、高い
密着強度が得られる窒化アルミニウム焼結体基板のメタ
ライズ方法を提供することである。(3) In order to remove organic substances, ultrasonic cleaning using an organic solvent has been conventionally used as a pretreatment for forming a metallized film. However, it requires a great number of steps and is uneven on the substrate surface. It is often difficult to completely remove the organic matter buried in the part. Furthermore, in recent years, the use of chlorine-based solvents, which has been effective in dissolving and removing organic substances, is becoming extremely limited in a social environment. In view of the above problems, the object of the present invention is to effectively remove organic substances adhering to an aluminum nitride substrate without deteriorating the characteristics of the substrate itself, and without using a harmful solvent, and to obtain high adhesion strength. It is to provide a method for metallizing a sintered body substrate.
【０００６】[0006]
【課題を解決するための手段】本発明者はメタライズ膜
形成の前処理として、加熱処理をすれば付着した有機物
を除去できること、窒化アルミニウムとの界面強度が脆
弱な酸化物あるいは水酸化物の生成を抑えられる加熱温
度を設定する必要があることを見いだし本発明に到達し
た。すなわち本発明は、窒化アルミニウム焼結体基板を
400℃以上700℃以下の温度でアルミニウムの酸化物また
は水酸化物の生成を抑えつつ加熱処理し、その後メタラ
イズ膜を成膜することを特徴とする窒化アルミニウム焼
結体基板のメタライズ方法である。Means for Solving the Problems The present inventor can remove organic substances adhering by heat treatment as a pretreatment for forming a metallized film, and generate oxides or hydroxides having weak interfacial strength with aluminum nitride. The inventors have found that it is necessary to set a heating temperature at which the temperature can be suppressed and reached the present invention. That is, the present invention provides an aluminum nitride sintered substrate
A method for metalizing an aluminum nitride sintered body substrate, which comprises heat-treating at a temperature of 400 ° C. or more and 700 ° C. or less while suppressing generation of aluminum oxide or hydroxide, and then forming a metallized film.
【０００７】[0007]
【作用】本発明の根幹をなす技術は、加熱により窒化ア
ルミニウム焼結体表面を浄化すること、特定の加熱温度
に規定することにより、アルミニウムの酸化物あるいは
水酸化物の生成を抑えることにある。本発明において加
熱温度を400℃以上700℃以下に規定したのは、400℃未
満の加熱温度では、有機物の分解が進まず、窒化アルミ
ニウム焼結体とメタライズ膜の密着強度を高める効果が
少ないためである。また700℃以下に規定したのは、700
℃を越えると、特に雰囲気として最も使用しやすい大気
を使用した場合に、酸化物あるいは水酸化物の生成によ
ってメタライズ膜と窒化アルミニウムとの密着強度の低
下が無視できなくなるためである。上記の加熱温度範囲
は、有機物の分解を進め、かつアルミニウムの酸化物あ
るいは水酸化物を抑制するという二つの効果を満足する
ために本発明では重要な構成要件である。The technique forming the basis of the present invention is to purify the surface of the aluminum nitride sintered body by heating, and to suppress the formation of aluminum oxide or hydroxide by limiting the temperature to a specific heating temperature. .. In the present invention, the heating temperature is specified to be 400 ° C. or higher and 700 ° C. or lower because at a heating temperature lower than 400 ° C., decomposition of organic substances does not proceed, and the effect of increasing the adhesion strength between the aluminum nitride sintered body and the metallized film is small. Is. In addition, 700 ° C is specified as 700 ° C or less.
This is because, when the temperature is higher than 0 ° C., the decrease in the adhesion strength between the metallized film and the aluminum nitride cannot be ignored due to the formation of oxides or hydroxides, especially when the atmosphere that is the easiest to use is used. The above heating temperature range is an important constituent factor in the present invention in order to satisfy the two effects of promoting the decomposition of organic substances and suppressing the oxide or hydroxide of aluminum.
【０００８】[0008]
【実施例】次に実施例に基づいて本発明をさらに詳細に
説明する。 （実施例１）窒化アルミニウムに3wt%のY2O3を含む窒化
アルミニウム焼結体から、20mm×20mm×2mmtの板状片を
切り出し、これを試料片とした。この試料片上に、有機
物付着を想定してロジンとパラフィンを主成分とするワ
ックスを加熱塗布し、大気中で、100-1000℃の各温度で
30分間の加熱処理を行った。その後スパッタリングによ
り、チタン−白金−金の３層からなるメタライズ膜を形
成した。窒化アルミニウム焼結体上の有機物残留状態を
確認するため、メタライズ膜を形成後、試料片に400
℃、15分間の加熱を行い、ふくれの発生の有無を確認し
た。また窒化アルミニウム焼結体とメタライズ膜の密着
強度を試験するため、メタライズ膜を形成した試料片に
コバール合金製ピンを4-6はんだにより接着し、接着面
を垂直方向に引っ張り、その破断応力により密着強度を
測定した。これらの結果を表１に示す。The present invention will be described in more detail based on the following examples. Example 1 A 20 mm × 20 mm × 2 mmt plate-shaped piece was cut out from an aluminum nitride sintered body containing 3 wt% Y 2 O 3 in aluminum nitride and used as a sample piece. Wax containing rosin and paraffin as main components was applied on the sample piece by heating, assuming that organic substances would adhere to the sample piece.
Heat treatment was performed for 30 minutes. Then, a metallized film consisting of three layers of titanium-platinum-gold was formed by sputtering. In order to confirm the residual state of organic substances on the aluminum nitride sintered body, after forming a metallized film, 400
It was heated at ℃ for 15 minutes, and it was confirmed whether blister occurred. In order to test the adhesion strength between the aluminum nitride sintered body and the metallized film, a Kovar alloy pin was bonded to the sample piece with the metallized film by 4-6 solder, the bonded surface was pulled vertically, and the breaking stress The adhesion strength was measured. The results are shown in Table 1.
【０００９】[0009]
【表１】 [Table 1]
【００１０】表１からわかるように、400℃未満の加熱
温度では窒化アルミニウムとメタライズ膜界面にふくれ
が発生し、ワックスが窒化アルミニウム焼結体上に残留
していることがわかる。また700℃を越える加熱温度で
は、窒化アルミニウム焼結体と窒化アルミニウム表面の
変質層でふくれが発生した。この変質層は、Ｘ線回折分
析により、アルミニウムの酸化物と水酸化物が検出され
た。また密着強度は本発明の加熱温度の範囲である400-
700℃では8kg/mm2以上の密着強度が得られたが、この加
熱温度の範囲から外れると密着強度の低下が起こること
がわかる。As can be seen from Table 1, at a heating temperature of less than 400 ° C., swelling occurs at the interface between the aluminum nitride and the metallized film, and the wax remains on the aluminum nitride sintered body. Further, at a heating temperature exceeding 700 ° C, blistering occurred in the aluminum nitride sintered body and the altered layer on the surface of the aluminum nitride. In this altered layer, aluminum oxide and hydroxide were detected by X-ray diffraction analysis. The adhesion strength is 400- which is within the heating temperature range of the present invention.
At 700 ° C, an adhesion strength of 8 kg / mm 2 or more was obtained, but it is clear that if the heating temperature is out of this range, the adhesion strength will decrease.
【００１１】[0011]
【発明の効果】本発明によれば、従来困難であった窒化
アルミニウム焼結体上の凹凸部に残留する有機物をも完
全に除去でき、浄化された表面にメタライズ膜を形成す
るため、密着強度の高いメタライズ膜が得られる。本発
明の加熱条件では、加熱によるアルミニウムの酸化物や
水酸化物形成もなく、有機物除去が達成できるので有害
な洗浄剤などを用いずに密着強度の高いメタライズが行
なえるものである。よって、本発明によるメタライズ膜
形成は、特にＬＳＩ等の半導体装置の信頼性向上に有効
である。EFFECTS OF THE INVENTION According to the present invention, it is possible to completely remove the organic substances remaining on the irregularities on the aluminum nitride sintered body, which has been difficult in the past, and to form the metallized film on the cleaned surface, so that the adhesion strength is improved. It is possible to obtain a metallized film having a high quality. Under the heating conditions of the present invention, the formation of aluminum oxides or hydroxides by heating can be eliminated, and the removal of organic substances can be achieved. Therefore, metallization with high adhesion strength can be performed without using harmful cleaning agents. Therefore, the metallized film formation according to the present invention is particularly effective for improving the reliability of semiconductor devices such as LSI.
Claims (1)
上700℃以下の温度でアルミニウムの酸化物または水酸
化物の生成を抑えつつ加熱処理し、その後メタライズ膜
を成膜することを特徴とする窒化アルミニウム焼結体基
板のメタライズ方法。1. An aluminum nitride sintered body substrate is heat-treated at a temperature of 400 ° C. or more and 700 ° C. or less while suppressing generation of aluminum oxide or hydroxide, and then a metallized film is formed. Metallization method for aluminum nitride sintered substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12654792A JPH05319965A (en) | 1992-05-20 | 1992-05-20 | Method for metallizing base of sintered material of aluminum nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12654792A JPH05319965A (en) | 1992-05-20 | 1992-05-20 | Method for metallizing base of sintered material of aluminum nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05319965A true JPH05319965A (en) | 1993-12-03 |
Family
ID=14937880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12654792A Pending JPH05319965A (en) | 1992-05-20 | 1992-05-20 | Method for metallizing base of sintered material of aluminum nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05319965A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001097780A (en) * | 1999-09-30 | 2001-04-10 | Toshiba Corp | Sintered aluminum nitride, and board using the same for semiconductor device |
| JP2008297136A (en) * | 2007-05-29 | 2008-12-11 | Taiheiyo Cement Corp | Method of manufacturing ceramic component for semiconductor manufacture and method of fitting the same |
| CN112530905A (en) * | 2019-09-18 | 2021-03-19 | 铠侠股份有限公司 | Semiconductor device, method of manufacturing the same, and semiconductor memory device |
-
1992
- 1992-05-20 JP JP12654792A patent/JPH05319965A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001097780A (en) * | 1999-09-30 | 2001-04-10 | Toshiba Corp | Sintered aluminum nitride, and board using the same for semiconductor device |
| JP2008297136A (en) * | 2007-05-29 | 2008-12-11 | Taiheiyo Cement Corp | Method of manufacturing ceramic component for semiconductor manufacture and method of fitting the same |
| CN112530905A (en) * | 2019-09-18 | 2021-03-19 | 铠侠股份有限公司 | Semiconductor device, method of manufacturing the same, and semiconductor memory device |
| CN112530905B (en) * | 2019-09-18 | 2024-04-16 | 铠侠股份有限公司 | Semiconductor memory device and method for manufacturing the same |
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