JP4922363B2 - 装置及びリソグラフィシステム - Google Patents
装置及びリソグラフィシステム Download PDFInfo
- Publication number
- JP4922363B2 JP4922363B2 JP2009181211A JP2009181211A JP4922363B2 JP 4922363 B2 JP4922363 B2 JP 4922363B2 JP 2009181211 A JP2009181211 A JP 2009181211A JP 2009181211 A JP2009181211 A JP 2009181211A JP 4922363 B2 JP4922363 B2 JP 4922363B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- measurement
- position sensor
- nozzle
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (6)
- 第1の供給ポートおよび測定ノズルを有する測定チャンバであって、前記第1の供給ポートを介して流体を受け取り、かつ前記測定ノズルを介して前記流体を放出するように適合された測定チャンバと、
第2の供給ポートおよび基準ノズルを有するとともに前記測定チャンバを支持する基準チャンバであって、前記第2の供給ポートを介して流体を受け取り、かつ前記基準ノズルを介して前記流体を放出するように適合された基準チャンバと、
前記測定チャンバと前記基準チャンバとの共通壁の一部分を形成して前記測定チャンバから前記基準チャンバを分離するダイヤフラムであって、与えられた圧力に応答するダイヤフラムと、
前記基準チャンバに取り付けられ、かつ前記基準ノズルのほぼ反対側に配置された基準スタンドオフ面と、
前記ダイヤフラムの動きに応答して信号を出力するように適合された位置センサと、
前記基準チャンバに形成された基準面と、
前記位置センサに対して少なくとも間接的に取り付けられ、前記基準面の変動に応答して信号を出力するように適合された基準位置センサと、
前記位置センサ及び前記基準位置センサを支持する基準フレームと、を備え、
前記基準チャンバが前記基準フレームに対して相対変位自在である、装置。 - 前記第1の供給ポートおよび前記第2の供給ポートがそれぞれ絞り機構を備える、請求項1に記載の装置。
- 前記基準チャンバが、前記基準チャンバの外部の位置から前記位置センサが前記ダイヤフラムの動きを検出することを可能にするように適合されたウィンドウをさらに備える、請求項1または2に記載の装置。
- 前記位置センサが光センサである場合に前記ウィンドウは透明材料を備え、または、前記位置センサが容量センサである場合に前記ウィンドウは非導電材料を備え、または、前記位置センサが誘導性センサである場合に前記ウィンドウは低透磁率材料を備える、請求項3に記載の装置。
- 前記基準フレームに対する前記基準チャンバの相対変位は伸縮機構によって実現される、請求項1〜4のいずれか1項に記載の装置。
- 放射ビームを生成するように適合された照明システムと、
前記放射ビームをパターニング可能であるパターニングデバイスを支持するように適合されたサポートデバイスと、
基板上に前記パターン化されたビームを投影するように適合された投影システムと、
前記基板からの近接を測定するように適合された近接センサと
を備え、
前記近接センサが、
第1の供給ポートおよび測定ノズルを有する測定チャンバであって、前記第1の供給ポートを介して流体を受け取り、かつ前記測定ノズルを介して前記流体を放出するように適合された測定チャンバと、
第2の供給ポートおよび基準ノズルを有するとともに前記測定チャンバを支持する基準チャンバであって、前記第2の供給ポートを介して流体を受け取り、かつ前記基準ノズルを介して前記流体を放出するように適合された基準チャンバと、
前記測定チャンバと前記基準チャンバとの共通壁の一部分を形成して前記測定チャンバから前記基準チャンバを分離するダイヤフラムであって、与えられた圧力に応答するダイヤフラムと、
前記基準チャンバに取り付けられ、かつ前記基準ノズルのほぼ反対側に配置された基準スタンドオフ面と、
前記ダイヤフラムの動きに応答して信号を出力するように適合された位置センサと、
前記基準チャンバに形成された基準面と、
前記位置センサに対して少なくとも間接的に取り付けられ、前記基準面の変動に応答して信号を出力するように適合された基準位置センサと、
前記位置センサ及び前記基準位置センサを支持する基準フレームと、を備え、
前記基準チャンバが前記基準フレームに対して相対変位自在である、リソグラフィシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8790208P | 2008-08-11 | 2008-08-11 | |
US61/087,902 | 2008-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010050449A JP2010050449A (ja) | 2010-03-04 |
JP4922363B2 true JP4922363B2 (ja) | 2012-04-25 |
Family
ID=41652613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009181211A Expired - Fee Related JP4922363B2 (ja) | 2008-08-11 | 2009-08-04 | 装置及びリソグラフィシステム |
Country Status (3)
Country | Link |
---|---|
US (1) | US8390782B2 (ja) |
JP (1) | JP4922363B2 (ja) |
NL (1) | NL2003266A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012123144A1 (en) * | 2011-03-11 | 2012-09-20 | Asml Netherlands B.V. | Electrostatic clamp apparatus and lithographic apparatus |
JP5915103B2 (ja) * | 2011-11-11 | 2016-05-11 | セイコーエプソン株式会社 | 物理量検出器 |
NL2017595A (en) * | 2015-11-10 | 2017-05-26 | Asml Netherlands Bv | Proximity sensor, lithographic apparatus and device manufacturing method |
NL2017846A (en) * | 2015-12-21 | 2017-06-27 | Asml Netherlands Bv | Height Measurement Apparatus |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111998A (en) * | 1980-02-11 | 1981-09-04 | Tokyo Shibaura Electric Co | Pressure signal transmitter |
US4550592A (en) | 1984-05-07 | 1985-11-05 | Dechape Michel L | Pneumatic gauging circuit |
JPH0762729B2 (ja) * | 1986-03-31 | 1995-07-05 | 株式会社日立製作所 | 自動焦点調節装置 |
JPS639805A (ja) * | 1986-06-30 | 1988-01-16 | Hitachi Electronics Eng Co Ltd | 流体噴射による位置決め装置 |
JPH0297643A (ja) * | 1988-09-30 | 1990-04-10 | Kubota Ltd | クリープ抵抗の高い耐熱鋳造合金 |
US4953388A (en) | 1989-01-25 | 1990-09-04 | The Perkin-Elmer Corporation | Air gauge sensor |
EP0460357A3 (en) * | 1990-06-08 | 1992-07-29 | Landis & Gyr Betriebs Ag | Device for optical measurement of pressure differences |
US5163326A (en) | 1991-03-08 | 1992-11-17 | Rosemount Inc. | Line pressure compensator for a pressure transducer |
JPH07135135A (ja) * | 1993-06-21 | 1995-05-23 | Hitachi Ltd | 半導体製造装置 |
JP3659529B2 (ja) * | 1996-06-06 | 2005-06-15 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP2002277384A (ja) * | 2001-03-19 | 2002-09-25 | Ishikawajima Inspection & Instrumentation Co | 欠陥検出方法及び装置 |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
EP1431710A3 (en) * | 2002-12-19 | 2004-09-15 | ASML Holding N.V. | Liquid flow proximity sensor for use in immersion lithography |
US6945116B2 (en) * | 2003-03-19 | 2005-09-20 | California Institute Of Technology | Integrated capacitive microfluidic sensors method and apparatus |
US7272976B2 (en) * | 2004-03-30 | 2007-09-25 | Asml Holdings N.V. | Pressure sensor |
US7021120B2 (en) * | 2004-04-28 | 2006-04-04 | Asml Holding N.V. | High resolution gas gauge proximity sensor |
US20070074579A1 (en) * | 2005-10-03 | 2007-04-05 | Honeywell International Inc. | Wireless pressure sensor and method of forming same |
US20070151327A1 (en) | 2005-12-29 | 2007-07-05 | Asml Holding N.V. | Gas gauge proximity sensor with internal gas flow control |
-
2009
- 2009-07-23 NL NL2003266A patent/NL2003266A1/nl not_active Application Discontinuation
- 2009-08-04 JP JP2009181211A patent/JP4922363B2/ja not_active Expired - Fee Related
- 2009-08-11 US US12/539,190 patent/US8390782B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8390782B2 (en) | 2013-03-05 |
NL2003266A1 (nl) | 2010-02-15 |
JP2010050449A (ja) | 2010-03-04 |
US20100033705A1 (en) | 2010-02-11 |
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