JP4907161B2 - Processing apparatus, ultrasonic cleaning method and ultrasonic cleaning program - Google Patents

Description

  The present invention relates to a processing apparatus, an ultrasonic cleaning apparatus, an ultrasonic cleaning method, and an ultrasonic cleaning program for performing a cleaning process on an object to be processed such as a semiconductor wafer or a liquid crystal substrate.

  2. Description of the Related Art Conventionally, a cleaning process for performing a cleaning process on an object to be processed such as a semiconductor wafer or a liquid crystal substrate is provided in a manufacturing process of a semiconductor component or a flat display. The processing apparatus used in this cleaning step is immersed in a state where a plurality of objects to be processed are arranged in a cleaning tank, and an ultrasonic wave is applied to the objects to be processed to perform cleaning processing on the objects to be processed. A device incorporating a sonic cleaning device is known (for example, see Patent Document 1).

  A conventional ultrasonic cleaning apparatus attaches an ultrasonic vibrator to the entire back surface of the bottom wall of a box-shaped cleaning tank opened upward, and simultaneously lifts and lowers a plurality of wafers (objects to be processed) inside the cleaning tank. An elevating mechanism is provided, and this elevating mechanism has a structure in which a wafer boat that holds a plurality of wafers in a vertical state in a state where a plurality of wafers are arranged in a horizontal direction is connected to the lower end portion of the elevating rod. .

In the conventional ultrasonic cleaning apparatus, after immersing a plurality of wafers supported by the wafer boat in the cleaning tank storing the cleaning liquid, the ultrasonic vibrator is operated, and the wafer boat is supported on the lower side. Then, ultrasonic waves are irradiated from the lower side of the wafer by an ultrasonic vibrator, and contaminants (particles, metals, organic impurities, etc.) are removed from the surface of the wafer by ultrasonic energy.
JP 2003-209086 A

  However, since the conventional ultrasonic cleaning apparatus is configured to irradiate the wafer with ultrasonic waves using the ultrasonic vibrator attached to the entire back surface of the bottom wall of the cleaning tank, The volume is large, which may hinder downsizing and weight reduction of the ultrasonic cleaning device, and the power consumption for operating the ultrasonic vibrator is large, hindering the power saving of the ultrasonic cleaning device. There was a fear.

  In addition, since the ultrasonic vibrator was attached to the back side of the bottom wall of the cleaning tank, the work such as inspection and repair of the ultrasonic vibrator became complicated, and the maintainability of the ultrasonic cleaning apparatus could be reduced. .

  Further, in the conventional ultrasonic cleaning apparatus, the wafer is supported by the wafer boat from the lower side, and further, the ultrasonic wave is irradiated toward the wafer by the ultrasonic vibrator from the lower side of the wafer boat. In addition, a wafer boat is interposed between the ultrasonic transducer and the wafer, and a part of the ultrasonic wave radiated from the ultrasonic transducer is blocked by the wafer boat, so that the ultrasonic wave reaches the surface of the wafer. There was a possibility that a portion where the sound wave did not reach was generated. As described above, if the ultrasonic wave is not partially irradiated on the surface of the wafer, the wafer is unevenly washed, which may cause a cleaning failure.

Therefore, in the present invention according to claim 1, as well as immersion in a state of being arranged a plurality of wafers in the cleaning tank toward the wafer is irradiated with ultrasonic waves having an ultrasonic cleaning unit for cleaning the wafer processing process In the apparatus, the ultrasonic cleaning unit arranges a plurality of vertical wafers in the cleaning tank at an interval in the front-rear direction and applies ultrasonic waves to the wafer from the upper part of the processing tank. The vibrator is disposed so as to be able to run in the wafer arrangement direction, and in the section where the ultrasonic wave is mainly applied to the back surface of the wafer, the ultrasonic wave is mainly used in the section where the ultrasonic wave is mainly applied to the wafer surface. was Rukoto increasing the output of the ultrasonic wave emitted from reducing the running speed of the vibrator or ultrasonic vibrator.

Further, in the present invention according to claim 2, in the present invention according to claim 1, wherein the ultrasonic transducer is fixed to an inclined state with respect to the surface of the wafer toward the arrangement direction of the wafers travel Decided to do.

Further, in the present invention according to claim 3, in the present invention according to claim 2 , the ultrasonic transducer travels from the front end to the rear end of the cleaning tank and when travels from the rear end to the front end. I decided to change the tilt direction .

Further, in the present invention according to claim 4, as well as immersion in a state of being arranged a plurality of wafers in the cleaning bath, the ultrasonic cleaning method for cleaning treatment of the wafer is irradiated with ultrasonic waves toward the wafer, cleaning internal causes are arranged at intervals around a plurality of vertical-shaped wafer of the vessel, toward the upper portion of the processing tank to the wafer ultrasonic transducer for applying ultrasonic waves toward the arrangement direction of the wafers travel In the section where the ultrasonic wave is mainly irradiated on the back surface of the wafer, the traveling speed of the ultrasonic vibrator is reduced or radiated from the ultrasonic vibrator compared to the section where the ultrasonic wave is mainly irradiated on the front surface of the wafer. we decided to carry out the cleaning process of the wafer by Rukoto increasing the output of the ultrasonic wave.

Further, in the present invention according to claim 5, in the present invention according to claim 4, wherein the ultrasonic vibrator, and fixed to an inclined state with respect to the surface of the wafer toward the arrangement direction of the wafer traveling Decided to let.

Further, in the present invention according to claim 6 , in the present invention according to claim 5, when the ultrasonic transducer travels from the front end to the rear end of the cleaning tank and when travels from the rear end to the front end, I decided to change the tilt direction .

Further, in the present invention according to claim 7, the ultrasonic cleaning apparatus performs the wafer cleaning process by immersing the wafer in a state where a plurality of wafers are arranged in the cleaning tank and irradiating the wafer with ultrasonic waves. in ultrasonic cleaning program for executing a cleaning process, a plurality of vertical-shaped wafer therein causes arranged at intervals in the front and rear of the cleaning tank, toward the upper portion of the processing tank to the wafer to ultrasonic waves In the section where the ultrasonic transducers are run in the wafer arrangement direction and ultrasonic waves are mainly irradiated on the back surface of the wafer, ultrasonic vibration is mainly generated in the sections where ultrasonic waves are mainly irradiated on the wafer surface. and to have an ultrasonic cleaning step for cleaning the wafer by Rukoto increasing the output of the ultrasonic wave emitted from reducing the running speed of the child or ultrasonic transducers.

Further, in the present invention according to claim 8, in the present invention according to claim 7, wherein the ultrasonic cleaning step, the ultrasonic transducer, fixed to an inclined state with respect to the surface of the wafer the wafer I decided to run in the direction of the array.

Further, in the present invention according to claim 9 , in the present invention according to claim 8 , the ultrasonic cleaning step is performed when the ultrasonic transducer travels from the front end to the rear end of the cleaning tank and the rear end. It was decided to change the inclination direction when traveling from the front to the front end .

  And in this invention, there exists an effect described below.

  That is, in the present invention, in the ultrasonic cleaning apparatus that performs the cleaning process of the target object by irradiating the target object with the ultrasonic wave while being immersed in a state where a plurality of target objects are arranged in the cleaning tank, Since the ultrasonic vibrator for irradiating ultrasonic waves toward the object to be processed is disposed so as to be able to travel in the arrangement direction of the objects to be processed, the small, light and low power consumption ultrasonic vibrator is provided. Even if it is used, it is possible to irradiate all of the objects to be processed immersed in the cleaning tank with ultrasonic waves, and it is possible to reduce the size, weight and power consumption of the ultrasonic cleaning device and the processing device incorporating the ultrasonic cleaning device. You can plan.

  In particular, since the ultrasonic vibrator is disposed on the opposite side of the support to support the object to be processed inside the cleaning tank, the ultrasonic wave radiated from the ultrasonic vibrator is disposed. Can be prevented from being blocked by the support, and ultrasonic waves can be applied to the entire surface of the object to be treated, so that the occurrence of uneven cleaning can be prevented.

  In addition, since the ultrasonic vibrator is installed in the upper part of the cleaning tank, only the ultrasonic vibrator can be inspected and repaired without removing the cleaning tank, improving the maintainability of the ultrasonic vibrator. Can be made.

  Further, since the ultrasonic transducer is disposed so as to be inclined with respect to the surface of the object to be processed, the ultrasonic wave that passes between the objects to be processed arranged without being irradiated on the surface of the object to be processed. Therefore, the ultrasonic wave radiated from the ultrasonic vibrator can be efficiently irradiated onto the surface of the object to be processed, so that the cleaning effect of the ultrasonic cleaning apparatus can be improved.

  Furthermore, since the irradiation angle of the ultrasonic wave from the ultrasonic transducer to the object to be processed can be changed, since the ultrasonic wave is irradiated to the object to be processed from any angle, more contaminants can be removed from the surface of the object to be processed. It can be removed more satisfactorily and the cleaning effect of the ultrasonic cleaning apparatus can be improved.

  A specific configuration of a processing apparatus incorporating an ultrasonic cleaning apparatus according to the present invention will be described below with reference to the drawings. In the following description, a case where a wafer (substrate) is used as an object to be subjected to ultrasonic cleaning processing will be described.

  As shown in FIG. 1, the processing apparatus 1 combines a carrier loading / unloading unit 4 that loads and unloads a carrier 3 containing a plurality of wafers 2 and a wafer 2 accommodated in the plurality of carriers 3. A batch knitting unit 6 for knitting batches 5 to be collectively processed, and a substrate processing unit 7 for cleaning and drying the wafers 2 for each batch 5 are configured.

  The carrier loading / unloading unit 4 forms a sealed opening / closing door 9 on a carrier stage 8 on which the carrier 3 is placed, and a carrier transfer mechanism 10 is disposed inside the opening / closing door 9. The carrier 3 placed on the stage 8 is temporarily stored in the carrier stock 11 as needed, and is carried into the carrier placement table 12.

  The carrier loading / unloading unit 4 requires the carrier 3 mounted on the carrier mounting table 12, contrary to the above loading, for the carrier 3 containing the wafer 2 processed by the substrate processing unit 7. Accordingly, the carrier is temporarily stored in the carrier stock 11 by the carrier transport mechanism 10 and is transported to the carrier stage 8.

  The batch knitting unit 6 forms a hermetic opening / closing door 13 with the carrier loading / unloading unit 4, and a substrate for simultaneously transferring a plurality of wafers 2 accommodated in the carrier 3 inside the opening / closing door 13. The transfer mechanism 14, the batch forming mechanism 15 for forming the batch 5 by changing the arrangement interval of the wafers 2 transferred by the substrate transfer mechanism 14 in half, and the arrangement of the wafers 2 transferred by the substrate transfer mechanism 14 A batch for transferring the batch 5 formed by the arrangement order changing mechanism 16 for changing the order and the batch forming mechanism 15 between the batch knitting unit 6 and the substrate processing unit 7 and transporting the inside of the substrate processing unit 7 A transport mechanism 17 is provided. The batch knitting unit 6 includes a wafer accommodation state detection sensor 18 for detecting the accommodation state of the wafer 2 accommodated in the carrier 3 and a notch for adjusting the positions of the notches of the plurality of wafers 2 accommodated in the carrier 3. An aligner 19 is provided.

  The batch knitting unit 6 combines a plurality of (for example, 25) wafers 2 accommodated in a plurality (for example, two) of carriers 3 carried in from the carrier carry-in / out unit 4 to perform substrate processing. A batch 5 composed of a plurality of (for example, 50) wafers 2 to be collectively processed in the unit 7 is formed, and the batch 5 is transferred to the substrate processing unit 7, and the processing in the substrate processing unit 7 is completed. Thereafter, the batch 5 is received from the substrate processing unit 7, the wafer 2 is accommodated in the original carrier 3, and the carrier 3 is transferred to the carrier loading / unloading unit 4.

  The substrate processing unit 7 includes a cleaning / drying mechanism 20 for cleaning and drying the wafer 2 and a cleaning mechanism 21 for cleaning the wafer 2. The cleaning / drying mechanism 20 includes a substrate cleaning / drying unit 23 that cleans and dries the batch 5 by moving the batch 5 up and down by the wafer lifting mechanism 22 and a transport mechanism cleaning unit 24 that cleans the batch transport mechanism 17. is doing. Further, the cleaning mechanism 21 is provided with an ultrasonic cleaning unit 25 as a first cleaning unit and second and third cleaning units 26, 27. The cleaning units 25, 26, 27 include , Cleaning tanks 28, 29, 30 for chemical treatment of batch 5, cleaning tanks 31, 32, 33 for pure water treatment of batch 5, cleaning tanks 28, 29, 30 and pure water for treatment of these chemicals Conveying mechanisms 34, 35, and 36 for conveying the batch 5 between the processing washing tanks 31, 32, and 33 are provided.

  Further, the substrate processing unit 7 is provided with a batch transport mechanism 17 along the cleaning / drying mechanism 20 and the cleaning mechanism 21, and a start end portion of the batch transport mechanism 17 is provided in the batch knitting unit 6.

  Then, the substrate processing unit 7 transports the batch 5 knitted by the batch knitting unit 6 to the wafer lifting mechanism 22 of the cleaning / drying mechanism 20 and the transport mechanisms 34, 35, 36 of the cleaning mechanism 21 by the batch transport mechanism 17. Each cleaning / drying mechanism 20 or cleaning mechanism 21 processes the wafer 2 for each batch 5, and then processes the processed batch 5 into the wafer lifting / lowering mechanism 22 of the cleaning / drying mechanism 20 and the transport mechanism 34, 35, 36 of the cleaning mechanism 21. The batch 5 is transferred to the batch conveying mechanism 17, and the batch 5 after the processing is conveyed again to the batch knitting unit 6 by the batch conveying mechanism 17.

  As described above, the processing apparatus 1 carries the wafer 2 together with the carrier 3 into the batch knitting unit 6 by the carrier carry-in / out unit 4, and the batch knitting unit 6 batches the batch 5 to be collectively processed by the substrate processing unit 7 to process the substrate. The batch processing unit 7 delivers the batch 5 after processing to the batch knitting unit 6, and the batch knitting unit 6 carries the wafer 2 constituting the batch 5 as a carrier. 3 is carried to the carrier loading / unloading unit 4, and the carrier 3 containing the processed wafer 2 is unloaded by the carrier loading / unloading unit 4.

  Next, the configuration of the ultrasonic cleaning unit 25 (ultrasonic cleaning device), which is a main part of the present invention, will be described. In the following description, the case where the present invention is applied to the cleaning tank 31 for pure water treatment of the first cleaning unit will be described as an example, but the present invention is not limited to this, and the first to first 3 cleaning units 25, 26, and 27, cleaning baths 28, 29, and 30 for chemical solution processing, cleaning baths 31, 32, and 33 for pure water processing, and also a cleaning bath provided in the substrate cleaning and drying unit 23 Applicable.

  As shown in FIGS. 2 to 4, the ultrasonic cleaning unit 25 is a cleaning liquid for supplying pure water as a cleaning liquid to the left and right side walls 38 and 39 of a bottomed rectangular box-shaped cleaning tank 37 having an open upper end. The supply nozzles 40 to 45 are mounted at intervals in the vertical direction, and a drain pipe 47 is connected to the bottom wall 46, and an opening / closing valve 48 is provided in the middle of the drain pipe 47. An annular overflow tank 49 is attached to the outer side of the upper end, a drain pipe 51 is connected to the bottom wall 50 of the overflow tank 49, and an open / close valve 52 is provided in the middle of the drain pipe 51.

  Here, a pure water supply source 53 for supplying pure water is connected to the cleaning liquid supply nozzles 40 to 45 via an opening / closing valve 54. By opening the opening / closing valve 54, the cleaning liquid supply is performed. Pure water can be supplied into the cleaning tank 37 from the nozzles 40 to 45. In addition, a control unit 55 is connected to the on-off valves 48, 52, and 54, and the on-off valves 48, 52, and 54 are controlled to open and close by the control unit 55.

  Further, the ultrasonic cleaning unit 25 has a lifting / lowering rod 56 of the transport mechanism 34 disposed so as to be movable up and down directly above the cleaning tank 37, and a wafer boat 57 that supports the wafer 2 is formed at the lower end of the lifting / lowering rod 56. Yes. In this wafer boat 57, four supporters 60 to 63 are attached to a pair of front and rear connecting members 58 and 59 with a space left and right. The support grooves 64 to 67 for supporting each wafer 2 in a vertical state with the wafers arranged in the horizontal direction are formed at intervals in the front-rear direction. The wafer boat 57 can move the wafers 2 together with the batch 5 between the upper position of the cleaning tank 37 and the internal position of the cleaning tank 37 by the transfer mechanism 34. A controller 55 is connected to the transport mechanism 34, and the transport mechanism 34 is driven and controlled by the controller 55.

  In the ultrasonic cleaning unit 25, an ultrasonic irradiation mechanism 68 is disposed above the cleaning tank 37. This ultrasonic irradiation mechanism 68 has a base 69 attached along the left side wall of the overflow tank 49, and a traveling base 70 is mounted on the base 69 along the base 69 between the front end and the rear end of the cleaning tank 37. The base end of the support shaft 71 extended to the right and left is pivotally attached to the right side of the platform 70 so that it can rotate, and the tip of the support shaft 71 is ultrasonic (megasonic wave). The ultrasonic vibrator 72 that radiates is attached.

  Here, the ultrasonic irradiation mechanism 68 is provided with a traveling mechanism 73 for traveling the traveling base 70 and an operating mechanism 74 for operating the ultrasonic vibrator 72 inside the base 69. A rotation mechanism 75 for rotating the support shaft 71 is disposed inside the 70. The travel mechanism 73, the operation mechanism 74, and the rotation mechanism 75 are connected to the control unit 55, and are driven and controlled by the control unit 55. That is, when the driving mechanism 73 is driven and controlled by the control unit 55, the traveling table 70 reciprocates along the base 69, and the ultrasonic transducer 72 reciprocates between the front end and the rear end of the cleaning tank 37 along with this. When the driving mechanism 74 is driven and controlled by the control unit 55, ultrasonic waves are radiated from the lower end portion of the ultrasonic vibrator 72, and when the rotation mechanism 75 is driven and controlled by the control unit 55, the support shaft 71 is driven. Is rotated, and the inclination angle of the front and rear of the ultrasonic transducer 72 is changed accordingly.

  As described above, in the ultrasonic cleaning unit 25, since the ultrasonic vibrator 72 is disposed above the cleaning tank 37, only the ultrasonic vibrator 72 is inspected and repaired without removing the cleaning tank 37. Therefore, the maintainability of the ultrasonic vibrator 72 can be improved.

  The ultrasonic cleaning unit 25 is configured as described above, and is driven and controlled by the control unit 55. The control unit 55 is communicably connected to a host computer provided separately from the processing apparatus 1, and can drive and control not only the ultrasonic cleaning unit 25 but also each part of the processing apparatus 1, and includes a CPU. A controller 76 and a storage medium 77 connected to the controller 76 are included. In this storage medium 77, various setting data and an ultrasonic cleaning program 78 are stored. The storage medium 77 may be a memory such as a ROM or a RAM, or may be a disk-shaped storage medium such as a hard disk or a CD-ROM.

  The control unit 55 drives and controls the ultrasonic cleaning unit 25 in accordance with the ultrasonic cleaning program 78 stored in the storage medium 77, so that the wafer 2 is cleaned.

  In the ultrasonic cleaning program 78, as shown in FIG. 5, first, the ultrasonic cleaning unit 25 is initially set (initial setting step S1).

  Specifically, as shown in FIG. 6, the controller 55 uses the transfer mechanism 34 to place the wafer boat 57 above the cleaning tank 37 and close the open / close valve 48 of the cleaning tank 37. At the same time, with the open / close valve 54 opened, pure water is supplied from the pure water supply source 53 into the cleaning tank 37 through the cleaning liquid supply nozzles 40 to 45. At this time, the control unit 55 opens the open / close valve 52 of the overflow tank 49 so that the pure water overflowed from the cleaning tank 37 can be discharged.

  Next, the ultrasonic cleaning program 78 receives the batch 5 composed of a plurality of (for example, 50) wafers 2 into the wafer boat 57 (wafer receiving step S2).

  Specifically, as shown in FIG. 7, the control unit 55 drives and controls the batch transfer mechanism 17 to transfer the wafers 2 constituting the batch 5 transferred by the batch transfer mechanism 17 to the support 60 of the wafer boat 57. It mounts in the support grooves 64-67 formed in -63.

  Next, the ultrasonic cleaning program 78 immerses the wafer 2 placed on the wafer boat 57 in pure water stored in the cleaning tank 37 (wafer immersing step S3).

  Specifically, as shown in FIG. 8, the controller 55 lowers the wafer 2 placed on the wafer boat 57 by lowering the wafer boat 57 to the inside of the cleaning tank 37 using the transfer mechanism 34. Immerse in pure water stored inside 37.

  Next, the ultrasonic cleaning program 78 performs ultrasonic cleaning of the wafer 2 by irradiating the wafer 2 immersed in pure water stored in the cleaning tank 37 with ultrasonic waves (ultrasonic cleaning step S4). .

  Specifically, as shown in FIG. 9, the control unit 55 drives and controls the traveling mechanism 73 of the ultrasonic irradiation mechanism 68 to reciprocate the traveling platform 70 between the front end and the rear end of the cleaning tank 37. At the same time, the operating mechanism 74 is driven and controlled to emit ultrasonic waves from the lower end surface of the ultrasonic transducer 72 toward the wafer 2.

  Thereby, the ultrasonic waves radiated from the ultrasonic vibrator 72 are irradiated on the front and back surfaces of the plurality of wafers 2 immersed in the state of being arranged in the cleaning tank 37, and from the front and back surfaces of the wafer 2 by the energy of the ultrasonic waves. Contaminants are removed.

  As described above, in the ultrasonic cleaning unit 25, the ultrasonic vibrator 72 for irradiating the ultrasonic wave toward the wafer 2 is caused to travel in the arrangement direction of the wafer 2, so that it is small, light and low in power consumption. Even if the ultrasonic vibrator 72 is used, it is possible to irradiate all of the plurality of wafers 2 immersed in the cleaning tank 37 with ultrasonic waves, and the ultrasonic cleaning unit 25 or a processing apparatus incorporating the ultrasonic cleaning unit 25 is provided. 1 can be reduced in size, weight, and power consumption.

  Moreover, in the ultrasonic cleaning unit 25, ultrasonic waves are directed toward the wafer 2 by the ultrasonic vibrator 72 from the opposite side across the wafer 2 with respect to the supports 60 to 63 that support the wafer 2 inside the cleaning tank 37. Therefore, the ultrasonic wave emitted from the ultrasonic vibrator 72 is not blocked by the supports 60 to 63, and the entire surface of the wafer 2 can be irradiated with ultrasonic waves. Can be prevented in advance.

  Here, in the ultrasonic cleaning step S4, as shown in FIG. 9, ultrasonic cleaning is performed by reciprocating the ultrasonic vibrator 72 with the irradiation surface at the lower end of the ultrasonic vibrator 72 fixed vertically downward. However, the ultrasonic cleaning may be performed by reciprocating with the ultrasonic transducer 72 tilted.

  For example, as shown in FIG. 10, the rotation mechanism 75 of the ultrasonic irradiation mechanism 68 is driven and controlled so that the irradiation surface at the lower end of the ultrasonic vibrator 72 is tilted, and then the traveling mechanism 73 is The drive control is performed to reciprocate the carriage 70 between the front end and the rear end of the cleaning tank 37, and the operation mechanism 74 is driven to control the ultrasonic wave from the lower end surface of the ultrasonic vibrator 72 toward the wafer 2. You may make it radiate | emit.

  In this case, the ultrasonic vibrator 72 may be reciprocated with the inclination direction of the ultrasonic vibrator 72 being always constant, and the ultrasonic transducer 72 may be moved between the front end and the rear end of the cleaning tank 37 and between the rear end and the front end. The sound wave vibrator 72 may be reciprocated with the inclination direction of the sound wave oscillator 72 reversed. For example, when the surfaces (main surfaces: circuit forming surfaces) of the wafer 2 are all arranged in the same direction, it is desirable to always make the inclination direction of the ultrasonic vibrator 72 constant, In the case where the front surface and the back surface are arranged facing each other, it is desirable to change the inclination direction of the ultrasonic transducer 72.

  As described above, in the ultrasonic cleaning unit 25, since the ultrasonic wave is applied to the wafer 2 by the ultrasonic vibrator 72 while being inclined with respect to the surface of the wafer 2, the surface of the wafer 2 is irradiated. The amount of ultrasonic waves that pass between the arranged wafers 2 can be reduced, and the surface of the wafer 2 can be efficiently irradiated with the ultrasonic waves radiated from the ultrasonic transducer 72. The cleaning effect of the sonic cleaning unit 25 can be improved.

  Further, as shown in FIG. 11, the rotation mechanism 75 of the ultrasonic irradiation mechanism 68 is driven and controlled to swing the ultrasonic vibrator 72 back and forth, and the traveling mechanism 73 is driven and controlled to clean the traveling table 70. The tank 37 may be reciprocated between the front end and the rear end, and in this state, the operating mechanism 74 may be driven and controlled to emit ultrasonic waves from the lower end surface of the ultrasonic vibrator 72 toward the wafer 2. .

  In this way, by reciprocating back and forth while swinging the ultrasonic vibrator 72 back and forth, the irradiation angle of the ultrasonic wave irradiated from the radiation surface at the lower end of the ultrasonic vibrator 72 toward the wafer 2 is time-dependent. Accordingly, it is possible to irradiate the surface of the wafer 2 with ultrasonic waves from any angle.

  In this case, if the ultrasonic transducer 72 is swung back and forth at least once between the intervals of the arranged wafers 2 (intervals between the adjacent wafers 2), the wafer 2 can be moved once in one run. Ultrasonic waves can be irradiated from all angles, and the irradiation efficiency of ultrasonic waves can be improved.

  As described above, in the ultrasonic cleaning unit 25, since the ultrasonic wave is applied to the wafer 2 while changing the irradiation angle of the ultrasonic wave from the ultrasonic vibrator 72 to the wafer 2, the wafer 2 is applied to the wafer 2 from any angle. Since the ultrasonic waves are irradiated, the contaminants can be removed more satisfactorily from the surface of the wafer 2 and the cleaning effect of the ultrasonic cleaning unit 25 can be improved.

  Further, the ultrasonic cleaning step S4 is not limited to the case where the ultrasonic transducer 72 is reciprocated at a constant speed, and the traveling mechanism 73 of the ultrasonic irradiation mechanism 68 is driven and controlled to increase or decrease the traveling speed of the traveling platform 70. Or it can also be made to stop. For example, the traveling speed of the ultrasonic vibrator 72 in the section where the ultrasonic wave is mainly irradiated from the ultrasonic vibrator 72 to the back surface of the wafer 2, and the ultrasonic wave from the ultrasonic vibrator 72 mainly on the surface of the wafer 2 is set. Reduce the traveling speed of the ultrasonic vibrator 72 in the irradiated section, or stop the ultrasonic vibrator 72 in the section where the ultrasonic wave is mainly irradiated from the ultrasonic vibrator 72 to the back surface of the wafer 2. In this way, the back surface of the wafer 2 can be irradiated with ultrasonic waves for a long time.

  The ultrasonic cleaning step S4 is not limited to the case of emitting a constant output of ultrasonic waves from the ultrasonic vibrator 72. The operation of the operating mechanism 74 of the ultrasonic irradiation mechanism 68 is driven and emitted from the ultrasonic vibrator 72. It is also possible to increase / decrease or intermittently output the ultrasonic waves to be generated. For example, the output of the ultrasonic vibrator 72 in a section in which ultrasonic waves are mainly irradiated from the ultrasonic vibrator 72 to the back surface of the wafer 2, and the ultrasonic waves are irradiated from the ultrasonic vibrator 72 mainly to the surface of the wafer 2. The output of the ultrasonic vibrator 72 is set to be larger than the output of the ultrasonic vibrator 72 in the section where the ultrasonic vibrator 72 is applied, or the output of the ultrasonic vibrator 72 is partially applied in the section where the ultrasonic wave is mainly irradiated from the ultrasonic vibrator 72 to the surface of the wafer 2. It is also possible to stop the laser beam so that a stronger ultrasonic wave is applied to the back surface than the front surface of the wafer 2.

  Further, the ultrasonic cleaning step S4 is not limited to the case where the ultrasonic transducer 72 is reciprocated a certain number of times, and the driving mechanism 73 and the operating mechanism 74 of the ultrasonic irradiation mechanism 68 are driven and controlled to be combined with the forward side. The number of times of traveling while irradiating ultrasonic waves from the ultrasonic vibrator 72 can be changed. For example, in a state where the surfaces of the wafers 2 are all arranged in the same direction, the ultrasonic vibrator 72 is caused to travel forward to irradiate ultrasonic waves mainly on the surface of the wafer 2, and the ultrasonic vibrator. The ultrasonic wave is mainly applied to the back surface of the wafer 2 by running the 72 on the double side, and the ultrasonic wave 72 is run on the double side where the ultrasonic wave is mainly applied to the back surface of the wafer 2. The number of times can be set to be larger than the number of times of irradiation on the outward side in which the ultrasonic transducer 72 travels while mainly irradiating the surface of the wafer 2 with ultrasonic waves.

  Thus, in the ultrasonic cleaning step S4, the traveling speed, output, and number of irradiations of the ultrasonic vibrator 72 may be changed. In particular, by irradiating the back surface of the wafer 2 with ultrasonic waves for a long time or stronger or more than the front surface, it is possible to prevent destruction of circuit patterns on the surface of the wafer 2 due to excessive irradiation of ultrasonic waves. In addition, contaminants attached to the back surface of the wafer 2 can be removed well.

  In the case where the front and back surfaces of the wafer 2 are arranged facing each other, the ultrasonic wave is emitted from the ultrasonic vibrator 72 as compared with the case where the front surfaces of the wafer 2 are all arranged in the same direction. Since it is easy to irradiate the front and back surfaces of the wafer 2 uniformly, when changing the traveling speed, output, and number of times of irradiation of the ultrasonic vibrator 72, all the surfaces of the wafer 2 are arranged in the same direction. It is desirable to drive the rotation mechanism 75 of the ultrasonic irradiation mechanism 68 and drive the ultrasonic transducer 72 in an inclined state.

  Next, the ultrasonic cleaning program 78 raises the wafer 2 placed on the wafer boat 57 from the inside of the cleaning tank 37 to the outside (wafer raising step S5).

  Specifically, the control unit 55 transports the wafer 2 placed on the wafer boat 57 to the outside of the cleaning bath 37 by raising the wafer boat 57 from the inside of the cleaning bath 37 using the transport mechanism 34.

  Finally, the ultrasonic cleaning program 78 delivers the wafer 2 subjected to the cleaning process to the batch transfer mechanism 17 (wafer delivery step S6).

  Specifically, the control unit 55 drives and controls the batch transfer mechanism 17 to receive the wafer 2 from the wafer boat 57.

The top view which shows the processing apparatus which concerns on this invention. The block diagram which shows an ultrasonic cleaning unit. FIG. FIG. The flowchart of an ultrasonic cleaning program. Operation explanatory diagram of the ultrasonic cleaning unit (at the time of initial setting). Explanatory drawing of operation of ultrasonic cleaning unit (when receiving wafer). Operation explanatory drawing of an ultrasonic cleaning unit (at the time of wafer immersion). Operation explanatory diagram of the ultrasonic cleaning unit (at the time of ultrasonic cleaning). Operation explanatory diagram of the ultrasonic cleaning unit (at the time of ultrasonic cleaning). Operation explanatory diagram of the ultrasonic cleaning unit (at the time of ultrasonic cleaning).

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Processing apparatus 2 Wafer 3 Carrier 4 Carrier carrying in / out part 5 Batch 6 Batch knitting part 7 Substrate processing part 8 Carrier stage 9 Opening / closing door 10 Carrier conveyance mechanism
11 Carrier stock 12 Carrier mounting table
13 Opening / closing door 14 Board transfer mechanism
15 Batch formation mechanism 16 Array order change mechanism
17 Batch transfer mechanism 18 Wafer containment state detection sensor
19 Notch aligner 20 Cleaning and drying mechanism
21 Cleaning mechanism 22 Wafer lifting mechanism
23 Substrate cleaning unit 24 Transport mechanism cleaning unit
25 Ultrasonic cleaning unit 26,27 Cleaning unit
28,29,30 Cleaning tank for chemical treatment 31,32,33 Cleaning tank for pure water treatment
34, 35, 36 Transport mechanism 37 Cleaning tank
38,39 Left and right side walls 40 to 45 Cleaning liquid supply nozzle
46 Bottom wall 47 Drain pipe
48 Open / close valve 49 Overflow tank
50 Bottom wall 51 Drain pipe
52 Open / close valve 53 Pure water supply source
54 Open / close valve 55 Control section
56 Lifting rod 57 Wafer boat
58,59 Linkage 60-63 Support
64 to 67 Support groove 68 Ultrasonic irradiation mechanism
69 base 70 platform
71 Support shaft 72 Ultrasonic transducer
73 Traveling mechanism 74 Operating mechanism
75 Rotating mechanism 76 Controller
77 Storage media 78 Ultrasonic cleaning program

Claims (9)

While immersed in a state of being arranged a plurality of wafers in the cleaning tank, the processing apparatus having an ultrasonic cleaning unit for cleaning treatment of the wafer is irradiated with ultrasonic waves toward the wafer,
The ultrasonic cleaning unit includes a plurality of vertical wafers arranged in the cleaning tank at an interval in the front-rear direction, and an ultrasonic transducer for irradiating ultrasonic waves from the upper part of the processing tank toward the wafer. The ultrasonic transducer is disposed so as to be able to travel in the wafer arrangement direction, and the ultrasonic transducer is mainly irradiated on the back surface of the wafer than the ultrasonic wave is irradiated on the front surface of the wafer. A processing apparatus characterized in that the traveling speed is reduced or the output of ultrasonic waves emitted from an ultrasonic transducer is increased . The processing apparatus according to claim 1, wherein the ultrasonic transducer is fixed in a state of being inclined with respect to a surface of the wafer and travels in an arrangement direction of the wafer .   The processing apparatus according to claim 2, wherein the ultrasonic vibrator changes an inclination direction when traveling from the front end to the rear end of the cleaning tank and when traveling from the rear end to the front end. In the ultrasonic cleaning method of immersing the wafer in a state where a plurality of wafers are arranged in a cleaning tank, and performing a wafer cleaning process by irradiating the wafer with ultrasonic waves,
A plurality of vertical wafers are arranged in the cleaning tank at an interval in the front-rear direction, and an ultrasonic transducer for irradiating ultrasonic waves from the upper part of the processing tank toward the wafer is directed in the wafer arrangement direction. In the section where the ultrasonic wave is mainly irradiated on the back surface of the wafer, the traveling speed of the ultrasonic vibrator is reduced or the ultrasonic vibrator is reduced in the section where the ultrasonic wave is mainly irradiated on the front surface of the wafer. ultrasonic cleaning method and performing a cleaning process of the wafer by Rukoto increasing the output of the ultrasonic waves emitted. The ultrasonic cleaning method according to claim 4, wherein the ultrasonic transducer is fixed in a state inclined with respect to the surface of the wafer and travels in an arrangement direction of the wafer .   6. The ultrasonic cleaning method according to claim 5, wherein the ultrasonic transducer is changed in inclination direction when traveling from the front end to the rear end of the cleaning tank and when traveling from the rear end to the front end. . While immersed in a state of being arranged a plurality of wafers in the cleaning tank, ultrasonic cleaning program for toward the wafer is irradiated with ultrasonic waves to perform a cleaning process to the ultrasonic cleaning device for cleaning treatment of the wafer In
A plurality of vertical wafers are arranged in the cleaning tank at an interval in the front-rear direction, and an ultrasonic transducer for irradiating ultrasonic waves from the upper part of the processing tank toward the wafer is directed in the wafer arrangement direction. In the section where the ultrasonic wave is mainly irradiated on the back surface of the wafer, the traveling speed of the ultrasonic vibrator is reduced or the ultrasonic vibrator is reduced in the section where the ultrasonic wave is mainly irradiated on the front surface of the wafer. ultrasonic cleaning program characterized by having an ultrasonic cleaning step for cleaning the wafer by Rukoto increasing the output of the ultrasonic waves emitted. The ultrasonic washing step, ultrasound of claim 7, wherein the ultrasonic transducer, fixed to an inclined state with respect to the surface of the wafer, characterized in that to travel towards the direction of arrangement of the wafer Cleaning program. 9. The ultrasonic cleaning step changes a tilt direction between when the ultrasonic transducer travels from the front end to the rear end of the cleaning tank and when travels from the rear end to the front end. The ultrasonic cleaning program described in 1.