JP4906888B2 - マスクブランク及びフォトマスク - Google Patents
マスクブランク及びフォトマスク Download PDFInfo
- Publication number
- JP4906888B2 JP4906888B2 JP2009124973A JP2009124973A JP4906888B2 JP 4906888 B2 JP4906888 B2 JP 4906888B2 JP 2009124973 A JP2009124973 A JP 2009124973A JP 2009124973 A JP2009124973 A JP 2009124973A JP 4906888 B2 JP4906888 B2 JP 4906888B2
- Authority
- JP
- Japan
- Prior art keywords
- semi
- film
- line
- transparent film
- mask blank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000002834 transmittance Methods 0.000 claims description 134
- 230000003595 spectral effect Effects 0.000 claims description 93
- 238000004519 manufacturing process Methods 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 46
- 230000005540 biological transmission Effects 0.000 claims description 37
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 36
- 229910052753 mercury Inorganic materials 0.000 claims description 36
- 239000012528 membrane Substances 0.000 claims description 25
- 229910016006 MoSi Inorganic materials 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 15
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910008812 WSi Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 369
- 238000004544 sputter deposition Methods 0.000 description 34
- 239000010453 quartz Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 239000007789 gas Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000011651 chromium Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 17
- 239000011521 glass Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 150000002739 metals Chemical class 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- -1 and Ta Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000002438 flame photometric detection Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical class F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 229910021563 chromium fluoride Inorganic materials 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009124973A JP4906888B2 (ja) | 2005-12-26 | 2009-05-25 | マスクブランク及びフォトマスク |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005371970 | 2005-12-26 | ||
JP2005371970 | 2005-12-26 | ||
JP2009124973A JP4906888B2 (ja) | 2005-12-26 | 2009-05-25 | マスクブランク及びフォトマスク |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006348984A Division JP4516560B2 (ja) | 2005-12-26 | 2006-12-26 | マスクブランク及びフォトマスク |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009187032A JP2009187032A (ja) | 2009-08-20 |
JP2009187032A5 JP2009187032A5 (zh) | 2011-07-28 |
JP4906888B2 true JP4906888B2 (ja) | 2012-03-28 |
Family
ID=38218030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009124973A Active JP4906888B2 (ja) | 2005-12-26 | 2009-05-25 | マスクブランク及びフォトマスク |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4906888B2 (zh) |
KR (2) | KR101082715B1 (zh) |
CN (1) | CN101346664B (zh) |
WO (1) | WO2007074810A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI446105B (zh) * | 2007-07-23 | 2014-07-21 | Hoya Corp | 光罩之製造方法、圖案轉印方法、光罩以及資料庫 |
TWI437358B (zh) | 2007-09-27 | 2014-05-11 | Hoya Corp | 空白光罩、空白光罩之製造方法及壓印用模型之製造方法 |
JP4934237B2 (ja) * | 2007-09-29 | 2012-05-16 | Hoya株式会社 | グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法 |
TWI422967B (zh) * | 2007-10-12 | 2014-01-11 | Ulvac Coating Corp | 多灰階光罩之製造方法 |
CN103513508B (zh) * | 2012-06-20 | 2016-08-10 | 欣兴电子股份有限公司 | 灰阶光掩膜与制作方法以及以灰阶光掩膜形成沟渠方法 |
CN107145035A (zh) * | 2017-03-30 | 2017-09-08 | 惠科股份有限公司 | 光罩及其主动开关阵列基板的制造方法 |
JP7166975B2 (ja) * | 2019-03-29 | 2022-11-08 | Hoya株式会社 | フォトマスクブランク、フォトマスクの製造方法、及び表示装置の製造方法 |
WO2024190208A1 (ja) * | 2023-03-15 | 2024-09-19 | 株式会社ニコン | フォトマスクブランクス、フォトマスク、フォトマスクブランクスの製造方法、フォトマスクの製造方法、及びデバイスの製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3262302B2 (ja) * | 1993-04-09 | 2002-03-04 | 大日本印刷株式会社 | 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法 |
KR100295385B1 (ko) * | 1993-04-09 | 2001-09-17 | 기타지마 요시토시 | 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및이들의제조방법 |
JP3289606B2 (ja) * | 1996-07-11 | 2002-06-10 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスク |
JP2004177683A (ja) * | 2002-11-27 | 2004-06-24 | Clariant (Japan) Kk | 超高耐熱ポジ型感光性組成物を用いたパターン形成方法 |
JP4385690B2 (ja) * | 2003-09-09 | 2009-12-16 | 凸版印刷株式会社 | 液晶表示素子製造用露光マスク及びその製造方法 |
JP4919220B2 (ja) * | 2005-02-28 | 2012-04-18 | Hoya株式会社 | グレートーンマスク |
JP5076473B2 (ja) * | 2005-12-05 | 2012-11-21 | 大日本印刷株式会社 | マスクブランクおよび階調マスク |
JP4961990B2 (ja) * | 2005-12-14 | 2012-06-27 | 大日本印刷株式会社 | マスクブランクおよび階調マスク |
-
2006
- 2006-12-26 KR KR1020087018335A patent/KR101082715B1/ko active IP Right Grant
- 2006-12-26 CN CN2006800493905A patent/CN101346664B/zh active Active
- 2006-12-26 KR KR1020117002397A patent/KR101210661B1/ko active IP Right Grant
- 2006-12-26 WO PCT/JP2006/325884 patent/WO2007074810A1/ja active Application Filing
-
2009
- 2009-05-25 JP JP2009124973A patent/JP4906888B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2007074810A1 (ja) | 2007-07-05 |
KR20110025232A (ko) | 2011-03-09 |
JP2009187032A (ja) | 2009-08-20 |
CN101346664B (zh) | 2011-12-14 |
KR20080088616A (ko) | 2008-10-02 |
KR101082715B1 (ko) | 2011-11-15 |
CN101346664A (zh) | 2009-01-14 |
KR101210661B1 (ko) | 2012-12-11 |
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