JP4891906B2 - 金属層を有する半導体素子の形成方法 - Google Patents
金属層を有する半導体素子の形成方法 Download PDFInfo
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- JP4891906B2 JP4891906B2 JP2007532343A JP2007532343A JP4891906B2 JP 4891906 B2 JP4891906 B2 JP 4891906B2 JP 2007532343 A JP2007532343 A JP 2007532343A JP 2007532343 A JP2007532343 A JP 2007532343A JP 4891906 B2 JP4891906 B2 JP 4891906B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 87
- 239000002184 metal Substances 0.000 title claims description 87
- 238000000034 method Methods 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000005530 etching Methods 0.000 claims description 58
- 239000000460 chlorine Substances 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 25
- 239000011737 fluorine Substances 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 230000008569 process Effects 0.000 description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 23
- 239000000463 material Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910004200 TaSiN Inorganic materials 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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Description
図中の要素は、簡単さ及び明瞭さのために示されており、必ずしも実寸に従い描かれていないことは、当業者にとって明らかである。例えば、図中の要素のいくつかの寸法は、本発明の実施形態の理解をより深めるため、他の要素よりも誇張されている。
Claims (4)
- 半導体素子を形成する方法であって、
半導体基板を提供するステップと、
前記半導体基板上に誘電体層を形成するステップと、
前記誘電体層上に金属層を形成するステップと、
前記金属層上に導電層を形成するステップと、
前記導電層の大部分をエッチングすると共に前記金属層と接触している部分を残存させるステップと、
前記金属層に対し選択的である化学物質を用いて前記金属層と接触している部分をエッチングすることにより、パターン化した導電層を形成するステップと、
前記パターン化した導電層をマスクとして使用することにより、フッ素を含む第1化学物質と、約30ワットよりも小さいバイアス電力とによって、前記金属層をエッチングするステップと、
塩素を含む第2化学物質により前記金属層をエッチングするステップと
を備える方法。 - 請求項1記載の方法において、
前記導電層はシリコンからなる方法。 - 請求項1記載の方法において、
前記フッ素を含む化学物質は塩素を含まない方法。 - 半導体素子を形成する方法であって、
半導体基板を提供するステップと、
前記半導体基板上に金属酸化物を形成するステップと、
前記金属酸化物上に金属層を形成するステップと、
前記金属層上に導電層を形成するステップと、
前記導電層の大部分をエッチングすると共に前記金属層と接触している部分を残存させるステップと、
前記金属層に対し選択的である化学物質を用いて前記金属層と接触している部分をエッチングすることにより、パターン化した導電層を形成するステップと、
前記金属層の所定の限界寸法を決定するステップと、
前記パターン化した導電層をマスクとして使用することにより、前記金属層を前記金属酸化物に至るまで下方へとエッチングすると共に前記金属層の側壁にフーティングを形成するため第1エッチングを実施するステップと、
前記所定の限界寸法を狙って前記フーティングを除去するための第2エッチングを実施するステップであって、前記第2エッチングは前記金属酸化物に対して選択的であるステップと
を備える方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/943,383 | 2004-09-17 | ||
US10/943,383 US7208424B2 (en) | 2004-09-17 | 2004-09-17 | Method of forming a semiconductor device having a metal layer |
PCT/US2005/029772 WO2006033746A2 (en) | 2004-09-17 | 2005-08-23 | Method of forming a semiconductor device having a metal layer |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008514001A JP2008514001A (ja) | 2008-05-01 |
JP2008514001A5 JP2008514001A5 (ja) | 2008-10-09 |
JP4891906B2 true JP4891906B2 (ja) | 2012-03-07 |
Family
ID=36074612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007532343A Expired - Fee Related JP4891906B2 (ja) | 2004-09-17 | 2005-08-23 | 金属層を有する半導体素子の形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7208424B2 (ja) |
JP (1) | JP4891906B2 (ja) |
KR (1) | KR20070057844A (ja) |
WO (1) | WO2006033746A2 (ja) |
Families Citing this family (18)
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KR100562657B1 (ko) * | 2004-12-29 | 2006-03-20 | 주식회사 하이닉스반도체 | 리세스게이트 및 그를 구비한 반도체장치의 제조 방법 |
US7435681B2 (en) * | 2006-05-09 | 2008-10-14 | Macronix International Co., Ltd. | Methods of etching stacks having metal layers and hard mask layers |
JP5578389B2 (ja) * | 2006-05-16 | 2014-08-27 | Nltテクノロジー株式会社 | 積層膜パターン形成方法及びゲート電極形成方法 |
US7655550B2 (en) * | 2006-06-30 | 2010-02-02 | Freescale Semiconductor, Inc. | Method of making metal gate transistors |
US8394724B2 (en) * | 2006-08-31 | 2013-03-12 | Globalfoundries Singapore Pte. Ltd. | Processing with reduced line end shortening ratio |
US7977218B2 (en) * | 2006-12-26 | 2011-07-12 | Spansion Llc | Thin oxide dummy tiling as charge protection |
US20080237751A1 (en) * | 2007-03-30 | 2008-10-02 | Uday Shah | CMOS Structure and method of manufacturing same |
JP5248063B2 (ja) * | 2007-08-30 | 2013-07-31 | 株式会社日立ハイテクノロジーズ | 半導体素子加工方法 |
US8012811B2 (en) * | 2008-01-03 | 2011-09-06 | International Business Machines Corporation | Methods of forming features in integrated circuits |
US8168542B2 (en) * | 2008-01-03 | 2012-05-01 | International Business Machines Corporation | Methods of forming tubular objects |
JP5579374B2 (ja) * | 2008-07-16 | 2014-08-27 | 株式会社日立ハイテクノロジーズ | 半導体加工方法 |
JP5042162B2 (ja) * | 2008-08-12 | 2012-10-03 | 株式会社日立ハイテクノロジーズ | 半導体加工方法 |
JP5210915B2 (ja) * | 2009-02-09 | 2013-06-12 | 株式会社東芝 | 半導体装置の製造方法 |
JP5250476B2 (ja) * | 2009-05-11 | 2013-07-31 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
KR20110042614A (ko) | 2009-10-19 | 2011-04-27 | 삼성전자주식회사 | 반도체 소자 및 그 형성방법 |
US10438909B2 (en) | 2016-02-12 | 2019-10-08 | Globalfoundries Singapore Pte. Ltd. | Reliable passivation for integrated circuits |
US10685849B1 (en) | 2019-05-01 | 2020-06-16 | Applied Materials, Inc. | Damage free metal conductor formation |
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JP2001160549A (ja) * | 1999-12-03 | 2001-06-12 | Matsushita Electronics Industry Corp | ドライエッチング方法 |
JP2004503106A (ja) * | 2000-07-12 | 2004-01-29 | アプライド マテリアルズ インコーポレイテッド | 半導体構造内のタングステンまたは窒化タングステン電極ゲートをエッチングする方法 |
JP2004179612A (ja) * | 2002-10-04 | 2004-06-24 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2005285809A (ja) * | 2004-03-26 | 2005-10-13 | Sony Corp | 半導体装置およびその製造方法 |
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US5948703A (en) | 1998-06-08 | 1999-09-07 | Advanced Micro Devices, Inc. | Method of soft-landing gate etching to prevent gate oxide damage |
US6492277B1 (en) * | 1999-09-10 | 2002-12-10 | Hitachi, Ltd. | Specimen surface processing method and apparatus |
US6794229B2 (en) * | 2000-04-28 | 2004-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
JP3760843B2 (ja) * | 2001-11-16 | 2006-03-29 | 三菱電機株式会社 | 半導体装置の製造方法 |
US6933243B2 (en) | 2002-02-06 | 2005-08-23 | Applied Materials, Inc. | High selectivity and residue free process for metal on thin dielectric gate etch application |
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JP2001160549A (ja) * | 1999-12-03 | 2001-06-12 | Matsushita Electronics Industry Corp | ドライエッチング方法 |
JP2004503106A (ja) * | 2000-07-12 | 2004-01-29 | アプライド マテリアルズ インコーポレイテッド | 半導体構造内のタングステンまたは窒化タングステン電極ゲートをエッチングする方法 |
JP2004179612A (ja) * | 2002-10-04 | 2004-06-24 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2005285809A (ja) * | 2004-03-26 | 2005-10-13 | Sony Corp | 半導体装置およびその製造方法 |
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WO2006033746A3 (en) | 2007-05-10 |
WO2006033746A2 (en) | 2006-03-30 |
KR20070057844A (ko) | 2007-06-07 |
US7208424B2 (en) | 2007-04-24 |
US20060063364A1 (en) | 2006-03-23 |
JP2008514001A (ja) | 2008-05-01 |
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