JP4891354B2 - Magnetoresistive device manufacturing method and manufacturing apparatus - Google Patents

Description

  The present invention relates to a method and apparatus for manufacturing a magnetoresistive device, and more particularly, to divide a magnetic multilayer film into a group consisting of a plurality of continuously deposited films, and prepare a single film forming chamber for each group. The present invention relates to a magnetoresistive device manufacturing method and a manufacturing apparatus in which film formation is performed for each group in each chamber.

  The magnetoresistive effect type magnetic head is a read-only magnetic head using a magnetoresistive effect element as a magnetic sensitive element, and has been put into practical use as a reproducing unit such as a hard disk drive. In recent years, TMR elements are being adopted as magnetoresistive elements used in magnetoresistive heads. The TMR element is an element utilizing the TMR effect (Tunneling Magnetoresistive). The TMR effect is a magnetoresistive effect generated at a tunnel junction in which an insulator is sandwiched between ferromagnetic materials. The TMR element has an advantage that the MR ratio is large as compared with a conventional element using an AMR (Anisotropic Magnetoresistive) effect or a GMR (Giant Magnetoresistive) effect. The MR ratio is 30-50%.

  The film constituting the TMR element basically has a structure of a magnetic multilayer film in which a first soft magnetic layer, an insulating layer, a second soft magnetic layer, an antiferromagnetic layer, and the like are sequentially laminated. ing. In the TMR element, each of the plurality of magnetic films is individually formed by sputtering, and the insulating layer is formed by a metal oxidation reaction.

  A conventional magnetic multilayer film manufacturing apparatus for sequentially depositing the films of each layer of the magnetic multilayer film as described above has been performed by continuous multilayer film formation. FIG. 5 shows a conventional typical sputter deposition apparatus for a head. In this sputtering film forming apparatus, a relatively large film forming chamber 103 is provided around a transfer chamber 102 in which a robot transfer apparatus 101 is built, and the inside of the film forming chamber 103 is arranged in a circular pattern so as to be magnetic. Targets 104A to 104J are provided for individually depositing various magnetic films constituting the multilayer film. The substrate carried in from the load chamber 105 is further introduced into the film forming chamber 103 by the robot transfer device 101 in the transfer chamber 102, where a magnetic multilayer film is manufactured on the substrate. The magnetic multilayer film is manufactured by moving the substrate, for example, in the clockwise direction, and stopping the substrate under each of the targets 104A to 104J and performing sputter deposition. The magnetic multilayer film on the substrate is continuously formed from the lower layer sequentially according to the set order on the basis of the targets arranged in a predetermined order in one deposition chamber 103 based on the targets arranged in a predetermined order. It is manufactured by. In this sputter film formation, the target is usually disposed horizontally, and the surface of the substrate is disposed opposite to the surface of the target. When the continuous multilayer film formation of the magnetic multilayer film using the plurality of targets 104A to 104J corresponding to the number of magnetic multilayer films in the film formation chamber 103 is completed, the film formation process is completed by the robot transfer apparatus 101 in the transfer chamber 102. The substrate is transported and unloaded from the unload chamber 106.

  In the conventional continuous multilayer film formation of the magnetic multilayer film, the film formation is continued from the lowermost layer to the uppermost layer without being interrupted due to the configuration of the sputtering film formation apparatus. On the other hand, the fabrication of the multilayer film that constitutes a semiconductor device has a plurality of deposition chambers around the transfer chamber as the center, and is configured as a cluster type in which each multilayer film is deposited in the plurality of deposition chambers. It is common to be done. It can be said that the structure of a conventional typical magnetic multilayer film sputtering apparatus is unique compared to the structure of a multilayer film forming apparatus according to such a normal semiconductor device.

  In the development of a sputter deposition system for magnetic heads suitable for mass production of magnetic heads of the above-mentioned TMR elements composed of magnetic multilayer films, not a unique configuration but a configuration suitable for a general configuration as a semiconductor device manufacturing apparatus is adopted. Is required.

  In the future, as a nonvolatile semiconductor memory, demand for MRAM (Magnetic Resistive Random Access Memory) having a magnetic multilayer film structure similar to that of a TMR element will increase in terms of improvement in memory integration and high-speed rewriting performance. In response to such demand, when an ordinary semiconductor device manufacturer manufactures a magnetic multilayer film, the conventional apparatus configuration in which a multilayer film is continuously formed in one large film forming chamber is compared with a normal semiconductor device manufacturing method. It is uncomfortable. Therefore, considering that a semiconductor manufacturer manufactures an MRAM on its own semiconductor line, a magnetic multilayer film manufacturing apparatus having a configuration (cluster system) suitable for the semiconductor line is required.

  In addition, the conventional continuous film formation of a magnetic multilayer film must be continuously formed without being interrupted from the bottom layer to the top layer on the substrate, and a large number of magnetic films are deposited at one time. There is a risk of being restricted in terms of improving

  Furthermore, in the production of MRAM, higher productivity is required compared to the production of magnetic heads. According to the configuration of the conventional typical magnetic multilayer film forming apparatus described above, since it is a continuous multilayer film formation, it is difficult to expect improvement in productivity.

  In view of the above problems, an object of the present invention is a normal configuration in the production of a magnetic head composed of a TMR element, an MRAM, etc., and particularly suitable for the production of a magnetic multilayer film by a semiconductor device manufacturer. An object of the present invention is to provide a method of manufacturing a magnetoresistive device that can be carried out using a magnetic multilayer film manufacturing apparatus capable of improving film performance and improving productivity.

  In order to achieve the above object, a magnetoresistive device manufacturing method according to the present invention is configured as follows.

That is, according to the first aspect of the present invention, the seed layer, the first magnetic layer, the Ru layer, the second magnetic layer, the metal oxide film, the third magnetic layer, the fourth magnetic layer, and the Ta layer are sequentially formed on the substrate from the lower layer. A method of manufacturing a magnetoresistive element in which layers are sequentially stacked,
By performing a film formation process on the substrate in the first chamber, the seed layer and the first magnetic layer are formed,
A Ru layer, a second magnetic layer, and a metal oxide film are formed by performing a film forming process on the substrate in a second chamber different from the first chamber,
Forming a third magnetic layer, a fourth magnetic layer, and a Ta layer by performing film formation on the substrate in a third chamber different from the first chamber and the second chamber; It is a manufacturing method of the magnetoresistive effect element characterized.

The second aspect of the present invention is a seed layer, an antiferromagnetic layer, a first magnetic layer, a Ru layer, a second magnetic layer, a metal oxide film, a third magnetic layer, and a fourth magnetic layer in order from the bottom layer on the substrate. A method of manufacturing a magnetoresistive effect element in which a layer and a Ta layer are sequentially stacked,
By performing a film formation process on the substrate in the first chamber, the seed layer, the antiferromagnetic layer, and the first magnetic layer are formed,
A Ru layer, a second magnetic layer, and a metal oxide film are formed by performing a film forming process on the substrate in a second chamber different from the first chamber,
Forming a third magnetic layer, a fourth magnetic layer, and a Ta layer by performing film formation on the substrate in a third chamber different from the first chamber and the second chamber; It is a manufacturing method of the magnetoresistive effect element characterized.

  According to the present invention, in the manufacture of a magnetoresistive device such as a magnetic head composed of a TMR element or MRAM, the multilayer film is divided into a plurality of groups, and the magnetic film for each group is formed by sputtering in one common film forming chamber. Therefore, it is possible to realize the structure of a normal cluster type film forming device as the semiconductor multilayer film manufacturing device, and to manufacture it with the magnetic multilayer film manufacturing device suitable for the semiconductor method of the semiconductor manufacturer. It can be realized, and the membrane performance can be further improved, and the productivity can be improved. Moreover, cross contamination between targets can be prevented by using a device having a double shutter mechanism.

  Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

  FIG. 1 is a plan view showing a typical configuration of a magnetic multilayer film manufacturing apparatus used in a method for manufacturing a magnetoresistive device according to the present invention, to the extent that the schematic configuration of an internal mechanism is found. The magnetic multilayer film manufacturing apparatus 10 is of a cluster type and includes a plurality of film forming chambers. A transfer chamber 12 provided with a robot transfer device 11 is installed at a central position. The robot transport device 11 includes an extendable arm 13 and a hand 14 for mounting a substrate. The base end portion of the arm 13 is rotatably attached to the central portion 12 a of the transfer chamber 12.

  The transfer chamber 12 of the magnetic multilayer film manufacturing apparatus 10 is provided with load / unload chambers 15 and 16. The load / unload chamber 15 carries the substrate to be processed into the magnetic multilayer film production apparatus 10 from the outside, and carries the substrate on which the magnetic multilayer film has been formed from the magnetic multilayer film production apparatus 10 to the outside. The load / unload chamber 16 has the same function, and the substrate loaded via the load / unload chamber 16 is unloaded from the chamber. The reason for providing two load / unload chambers is to increase productivity by using the two chambers alternately.

  In the magnetic multilayer film manufacturing apparatus 10, three film forming chambers 17 A, 17 B, and 17 C, one oxide film forming chamber 18, and one cleaning chamber 19 are provided around the transfer chamber 12. . Between the two chambers, there is provided a gate valve 20 that isolates both chambers and can be opened and closed as necessary. Each chamber is provided with an evacuation mechanism, a source gas introduction mechanism, a power supply mechanism, etc., but these are not shown.

  Each of the film forming chambers 17A, 17B, and 17C is a film forming chamber for continuously forming a plurality of magnetic films belonging to a group in the same chamber. According to this embodiment, the magnetic multilayer film deposited on the substrate is divided into three groups A, B, and C from the lower side, and a plurality of magnetic films for each group are deposited in one common film forming chamber. It is configured as follows. Thus, a cluster type magnetic multilayer film manufacturing apparatus is realized. In each of the film forming chambers 17A, 17B, and 17C, which are grouped by A, B, and C and deposit a plurality of magnetic films belonging to each group, the magnetic films are deposited by PVD (Physical Vapor Deposition) using sputtering.

  In the film forming chamber 17A for forming a magnetic film belonging to the group A, for example, Ta, NiFe or NiFeCr (Seed layer: this layer can be omitted), PtMn, PdPtMn or IrMn (antiferromagnetic layer: antiferromagnetic layer), CoFe Each magnetic film is continuously deposited in a predetermined order. For this reason, in the film formation chamber 17A, four targets corresponding to Ta, NiFe, NiFeCr, PtMn, PdPtMn, IrMn, and CoFe, respectively, on the ceiling with respect to the substrate 22 disposed on the substrate holder 21 at the bottom center. 23-26 are attached. 1, an evacuation mechanism for making the inside of the film forming chamber 17A a required vacuum state, a mechanism for supplying power required for sputtering of the targets 23 to 26, a mechanism for generating plasma, and the like are shown. Is omitted, and this is the same in other film forming chambers.

  In the film forming chamber 17B for forming magnetic films belonging to the group B, for example, CoFe, Ru, and Al magnetic films are successively deposited in a predetermined order. For this reason, in the film forming chamber 17B as well, the targets 29 to 32 corresponding to CoFe, Ru, and Al are attached to the ceiling portion of the substrate 28 disposed on the substrate holder 27 at the bottom center. It has been.

  In the film forming chamber 17C for forming magnetic films belonging to the group C, for example, Ta, NiFe, CoFe, and Cu magnetic films are successively deposited in a predetermined order. For this reason, in the film forming chamber 17C, similarly to the above, the four targets 35 corresponding to Ta, NiFe, CoFe, and Cu, respectively, on the ceiling with respect to the substrate 34 disposed on the substrate holder 33 at the bottom center. ~ 38 are attached.

  In the oxide film forming chamber 18, a surface chemical reaction for oxidizing the metal layer is performed. In this surface chemical reaction, plasma oxidation, natural oxidation, ozone oxidation, ultraviolet-ozone oxidation, radical oxygen, or the like is used. In the oxide film forming chamber 18, 39 is a substrate holder, and 40 is a substrate.

  In the cleaning chamber 19, an ion beam etching mechanism and an RF sputter etching mechanism are provided, and surface flattening is performed. In the cleaning chamber 19, 41 is a substrate holder, and 42 is a substrate.

  In the magnetic multilayer film manufacturing apparatus 10 having the above-described configuration, the substrate 43 carried into the interior through the load / unload chamber 15 is deposited by the robot transport apparatus 11 into the film deposition chambers 17A, 17B, 17C, and the oxide film deposition chamber 18. Are introduced into each of the cleaning chambers 19 in a predetermined order according to the magnetic multilayer device to be manufactured, and predetermined processing such as film formation and etching is performed in each chamber. Examples of the magnetic multilayer device to be manufactured include an MRAM, a TMR head, and an advanced (improved) GMR.

  FIG. 2 shows an example of the above device having a magnetic multilayer film structure. 2A shows an 8-layer MRAM, FIG. 2B shows a 10-layer TMR head or MRAM, and FIG. 2C shows a 13-layer advanced GMR.

As shown in FIG. 2A, the 8-layer MRAM has an order of Ta, CoFe, Ru, CoFe, Al—O, CoFe, NiFe, and Ta from the first lowermost layer to the eighth uppermost layer. The magnetic film is laminated. In this stacked state, Ta (first layer) and CoFe (second layer) belong to group A, and Ru (third layer), CoFe (fourth layer), and Al—O (fifth layer) belong to group B. CoFe (sixth layer), NiFe (seventh layer), and Ta (eighth layer) belong to group C. Etching for cleaning (indicated by the symbol “Cl.” In the figure) is performed under Ta of the first layer. Further, an oxidation treatment of the Al film (indicated by the symbol “Ox.” In the figure) is performed between the fifth layer of Al—O and the sixth layer of CoFe, whereby Al—O becomes an Al oxide film. Note that the Al oxide film (Al—O) may be formed by a reactive sputtering method using O ₂ gas of an Al target. The same applies to other multilayer films.

  According to FIG. 2B, the 10-layer TMR head or MRAM has Ta, NiFe, PtMn, CoFe, Ru, CoFe, Al—O, from the first lowermost layer to the uppermost tenth layer. Magnetic films are laminated in the order of CoFe, NiFe, Ta. In this stacked state, Ta (first layer), NiFe (second layer), PtMn (third layer), and CoFe (fourth layer) belong to group A, and Ru (fifth layer) and CoFe (sixth layer). ) And Al—O (seventh layer) belong to group B, and CoFe (eighth layer), NiFe (nineth layer), and Ta (tenth layer) belong to group C. A cleaning (Cl.) Etching is performed under the Ta of the first layer. Further, an oxidation process (Ox.) Is performed between the seventh layer of Al—O and the eighth layer of CoFe, and Al—O becomes an Al oxide film. Compared with the 8-layer MRAM shown in FIG. 2A, the second and third layers are different in that NiFe and PtMn magnetic film layers are added, and the arrangement of the other multilayer structures is the same. is there.

  Referring to FIG. 2C, the 13-layer advanced GMR has Ta, NiFeCr, PtMn, CoFe, Ru, CoFe, and NOL (Nano Oxide Layer) from the first lowermost layer to the uppermost thirteenth layer. CoFe-O, etc.), CoFe, Cu, CoFe, NiFe, Cu, Ta are stacked in this order. In this stacked state, Ta (first layer), NiFeCr (second layer), PtMn (third layer), and CoFe (fourth layer) belong to group A, and Ru (fifth layer) and CoFe (sixth layer). ) And NOL (seventh layer) belong to group B, CoFe (8th layer), Cu (9th layer), CoFe (10th layer), NiFe (11th layer), Cu (12th layer) and Ta (13th layer) belongs to group C. A cleaning (Cl.) Etching is performed under the Ta of the first layer. Further, an oxidation process (Ox.) Is performed between the sixth layer CoFe and the eighth layer CoFe, and as a result, a very thin oxide film NOL (Nano Oxide Layer) is formed as the seventh layer.

  As described above, any magnetic multilayer film device to be manufactured is divided into three groups A, B, and C, and a plurality of magnetic films belonging to each group are successively deposited. The film is formed. The magnetic films belonging to group A are sequentially formed in the film forming chamber 17A, the magnetic films belonging to group B are sequentially formed in the film forming chamber 17B, and the magnetic films belonging to group C are formed in the film forming chamber 17C. Is done. Further, the oxide film is formed in the oxide film forming chamber 18, and the cleaning etching is performed in the cleaning chamber 19.

  When manufacturing the above-described eight-layer MRAM in the multilayer magnetic film manufacturing apparatus 10, the substrate carried into the apparatus is first introduced into the cleaning chamber 19 and is subjected to an etching process for planarizing the substrate surface with an ion beam or the like. Then, the film is introduced into the film forming chamber 17A, and the first layer and the second layer of the group A are successively deposited by sputtering using the respective targets sequentially, and then introduced into the film forming chamber 17B. The second to fifth layers of Group B are successively deposited by sputtering using each target sequentially, and then introduced into the oxide film forming chamber 18 to form an oxide film (alumina layer). Introduced into the film forming chamber 17C, the sixth to eighth layers of the group C are successively deposited by sputtering using each target sequentially.

  In the magnetic multilayer film manufacturing apparatus 10 described above, the same process as described above is performed when the 10-layer TMR head / MRAM or the 13-layer advanced GMR described above with reference to FIG. 2 is manufactured. The magnetic multilayer film is continuously formed by sputtering in the corresponding film forming chambers 17A, 17B, and 17C for each group.

  Conventionally, as described above, a magnetic multilayer film manufactured by continuously depositing a multilayer magnetic film from the lowermost layer to the uppermost layer in one large film forming chamber is divided into a plurality of specific groups. We have found the knowledge that a plurality of divided magnetic films can be formed by using film forming chambers in different environments, and based on this knowledge, using a plurality of film forming chambers for sputter film formation as described above. A multilayer magnetic film is divided into groups to form a cluster type magnetic multilayer film manufacturing apparatus. As shown in FIG. 2, the method of dividing the multilayer magnetic film is preferably divided into three groups A, B, and C, but is not limited thereto. As a criterion for grouping, preferably, separation is performed between a metal oxide film (for example, Al—O) and a subsequent magnetic layer, and an anti-ferro layer (an antiferromagnetic layer, for example, This means that the PtMn layer) and the subsequent magnetic layer (mainly CoFe layer) are always formed continuously in the same film forming chamber. Further, from the viewpoint of separating the film formation chamber, it is preferable to separate the stacks before and after the oxidation process when the oxidation process is performed midway. Furthermore, it is necessary to consider that the number of stacked layers by each film forming chamber is distributed as evenly as possible.

  In addition, the same magnetic film (CoFe or the like) may be deposited in each of the different film forming chambers 17A, 17B, and 17C. However, by adopting a film forming procedure in which one chamber is passed once, film forming efficiency is improved. Is increasing. Further, according to the configuration of the cluster type magnetic multilayer film manufacturing apparatus having the above configuration, it is possible to cope with the manufacture of magnetic film devices having various multilayer film structures.

  By separating the magnetic multilayer film into groups as described above and performing sputter deposition in different deposition chambers for each group, the film performance can be improved as follows. For example, on the substrate, from the lower side, Ta (5 nm), NiFe (2 nm), PtMn (20 nm), CoFe (2 nm), Ru (0.85 nm), CoFe (2.5 nm), Cu (3 nm), CoFe ( With respect to the spin valve GMR film laminated in the order of 1 nm), NiFe (3 nm), and Ta (3 nm), an MR ratio of 7.39% can be obtained when all the layers are continuously formed. On the other hand, the MR ratio is reduced to 6.67% when separation film formation is performed by interrupting between the PtMn layer (third layer) and the CoFe layer (fourth layer). Therefore, it is preferable to continuously form the antiferromagnetic layer and the subsequent magnetic layer in the same film formation chamber. Furthermore, when performing separation film formation by interrupting between the Ru layer (fifth layer) and the CoFe layer (sixth layer), the MR ratio becomes 7.45%, and the CoFe layer (sixth layer) and the Cu layer When the separation film formation is interrupted between the (seventh layer), the MR ratio is 7.66%, and the separation is interrupted between the Cu layer (seventh layer) and the CoFe layer (eighth layer). When film formation is performed, the MR ratio is 7.67%. In these cases, the interface improves the MR ratio. For this reason, it is not always necessary to continuously form all the layers in the same film formation chamber. Considering improvement in characteristics and productivity, the magnetic multilayer films are divided into groups, and the film formation chamber is divided into groups. It is desirable to prepare a plurality and separate film formation.

  Next, a characteristic structure provided in each of the film forming chambers 17A, 17B, and 17C will be described in more detail with reference to FIG. 3A is a plan view of the film forming chamber 17C, for example, and FIG. 3B is a longitudinal sectional view showing a characteristic structure. 3, elements that are substantially the same as the elements described in FIG. As described above, the four targets 35 to 38 are provided on the ceiling 52 of the container 51 of the film forming chamber 17C. These targets 35 to 38 are attached in an inclined state at the ceiling portion 52. A substrate holder 33 that is rotatably provided at the center of the bottom surface of the film forming chamber 17C carries a substrate 34 in a horizontal state. At the time of sputtering film formation on the substrate 34, the substrate 34 is in a rotating state. A ring-shaped magnet 53 is installed around the substrate 34 on the substrate holder 33. The targets 35 to 38 provided in an inclined manner are each arranged in such a posture as to face the upper surface of the substrate 34 arranged horizontally below. A shutter mechanism 54 is disposed between these targets and the substrate 34. The shutter mechanism 54 has a double shutter. By the operation of the shutter mechanism 54, a target to be used for sputtering film formation is selected from the four targets 35 to 38. With such a configuration, oblique incidence of the sputtered target material is realized, a highly uniform film thickness distribution is achieved in the multilayer film formation, and contamination between the targets and between the magnetic films are prevented from occurring.

  The structure and operation of the shutter mechanism 54 will be conceptually described in detail with reference to FIG. The shutter mechanism 54 is configured as a double rotation shutter. In this illustrated example, the four targets 37 to 38 are shown in a state of being arranged in parallel for simplicity of explanation. The shutter mechanism 54 is provided so that the two shutter plates 61 and 62 are arranged substantially in parallel and can be freely rotated around the shaft 63 individually. The shutter plate 61 has two holes 61a and 61b arranged in the diameter direction, and the shutter plate 62 has one hole 62a. In the state shown in FIG. 3, the sputter film formation using the target 38 is performed by overlapping the positions of the hole 61 a of the shutter plate 61 and the hole 62 a of the shutter plate 62 with respect to the target 38, and the rotating substrate 34. A predetermined magnetic film is deposited on the surface. At this time, the targets 36 and 37 are covered with the two shutter plates 61 and 62 to prevent the sputtered target material from adhering. Further, the target 35 faces the hole 61b in the shutter plate 61, but is similarly protected because it is covered by the shutter plate 62. As described above, the cross-contamination between the targets is prevented by the shutter plates 61 and 62 composed of the double rotation shutter.

  In the above-described embodiment, since the magnetic multilayer film is divided into three groups, the three film forming chambers 17A, 17B, and 17C are provided. However, the number of group divisions is arbitrary, and the number of film forming chambers is arbitrary. Can be set. Further, the order of depositing the multilayer magnetic films is not limited to the above-described embodiment, and can be arbitrarily set.

  Sputter deposition of multilayer magnetic films is divided into groups, and the number of magnetic films continuously deposited in one deposition chamber is reduced, so that film flatness can be improved and film quality can be improved. .

As described above, the magnetic multilayer film manufacturing equipment used in the method for manufacturing a magneto-resistance device according to the present invention, sequentially deposited in a stacked state each layer of the multilayer film including a plurality of magnetic films and a non-magnetic film on the substrate A magnetic multilayer film manufacturing apparatus for manufacturing a magnetic multilayer film, wherein the plurality of magnetic films are divided into a plurality of groups, and each of the plurality of groups is composed of a plurality of magnetic films deposited successively in a laminated state. The plurality of magnetic films included in each of the plurality of groups are configured to be sequentially deposited on the substrate in the same film formation chamber.

  According to the above-mentioned magnetic multilayer film manufacturing apparatus, it is possible to perform sputtering film formation of a multilayer magnetic film divided into a plurality of groups based on a specific standard, and thereby, a cluster type magnetic film having a large number of film forming chambers. The configuration of the multilayer film manufacturing apparatus is realized. The realization of the cluster system in the production of the magnetic multilayer film matches the system of the semiconductor manufacturer.

  The magnetic multilayer film manufacturing apparatus used in the magnetoresistive device manufacturing method according to the present invention preferably has one film forming chamber corresponding to each of a plurality of groups, and corresponds to the number of groups. A plurality of film forming chambers are provided. When forming a magnetic multilayer film that can be divided into a plurality of groups, it is preferable to carry out a film forming process for each group, and a plurality of magnetic films belonging to a group are continuously formed by using sputtering in the same film forming chamber. Film is formed.

  The magnetic multilayer film manufacturing apparatus used in the magnetoresistive device manufacturing method according to the present invention preferably has a film having other properties in addition to a plurality of film forming chambers for forming the magnetic film in the above-described configuration. It is comprised so that the film-forming chamber for performing may be provided. Since the magnetic multilayer film needs to form an oxide film at an intermediate stage, such a film forming chamber is prepared separately. Since it is a cluster-type film forming apparatus, it is possible to provide another film forming chamber around the transfer chamber located at the center.

  In the above-described configuration, the magnetic multilayer film manufacturing apparatus used in the magnetoresistive device manufacturing method according to the present invention preferably has a plurality of film forming chambers arranged around a transfer chamber located in the center having a substrate transfer apparatus. Configured to be. A cluster system film forming apparatus is realized, which can be integrated with a semiconductor system.

  The magnetic multilayer film manufacturing apparatus used for the magnetoresistive device manufacturing method according to the present invention preferably has a plurality of film forming chambers included in the group in the above-described configuration in order to form a plurality of magnetic films included in the group. A plurality of targets corresponding to the magnetic films are arranged, and in the film formation chamber, the substrate is arranged in the center of the bottom surface in a rotating state, and the plurality of targets are provided inclined toward the substrate. In order to deposit a plurality of types of magnetic films by sputtering in one film forming chamber and to deposit a high performance magnetic film efficiently, an oblique film forming configuration is preferable.

  The magnetic multilayer film manufacturing apparatus used in the magnetoresistive device manufacturing method according to the present invention has the above-described configuration, and is preferably a film forming chamber, and includes two shutter plates that rotate individually on the front surfaces of a plurality of targets. A double shutter mechanism is provided. By providing the double shutter mechanism, cross contamination between targets provided in the same film formation chamber can be prevented.

  The magnetic multilayer film manufacturing apparatus used in the magnetoresistive device manufacturing method according to the present invention preferably has a plurality of groups formed between the metal oxide layer included in the multilayer film and the subsequent magnetic film. The antiferromagnetic film and the subsequent magnetic layer are formed in the same film forming chamber continuously in the same film forming chamber.

It is a top view which shows the structure of typical embodiment of the magnetic multilayer film preparation apparatus used for the manufacturing method of the magnetoresistive device based on this invention. It is a figure explaining three examples and the grouping (A, B, C) of the laminated structure of the magnetic multilayer film which is a production target. It is a figure which shows the top view (A) and longitudinal cross-sectional view (B) which show schematically the structure of one film-forming chamber of the magnetic multilayer film production apparatus used for the manufacturing method of the magnetoresistive device based on this invention. It is explanatory drawing which shows schematically the double shutter mechanism by this invention. It is a top view of the conventional typical magnetic multilayer film preparation apparatus.

DESCRIPTION OF SYMBOLS 10 Magnetic multilayer film production apparatus 11 Robot control apparatus 12 Transfer chamber 17A-17C Film formation chamber 18 Oxide film formation chamber 19 Cleaning chamber 54 Shutter mechanism

Claims (2)

A magnetoresistive effect in which a seed layer, a first magnetic layer, a Ru layer, a second magnetic layer, a metal oxide film, a third magnetic layer, a fourth magnetic layer, and a Ta layer are sequentially stacked on a substrate in order from the lower layer. A method for manufacturing an element, comprising:
By performing a film formation process on the substrate in the first chamber, the seed layer and the first magnetic layer are formed,
A Ru layer, a second magnetic layer, and a metal oxide film are formed by performing a film forming process on the substrate in a second chamber different from the first chamber,
Forming a third magnetic layer, a fourth magnetic layer, and a Ta layer by performing film formation on the substrate in a third chamber different from the first chamber and the second chamber; A method for manufacturing a magnetoresistive effect element. A seed layer, an antiferromagnetic layer, a first magnetic layer, a Ru layer, a second magnetic layer, a metal oxide film, a third magnetic layer, a fourth magnetic layer, and a Ta layer are sequentially stacked on the substrate in order from the lower layer. A method of manufacturing a magnetoresistive effect element, comprising:
By performing a film formation process on the substrate in the first chamber, the seed layer, the antiferromagnetic layer, and the first magnetic layer are formed,
A Ru layer, a second magnetic layer, and a metal oxide film are formed by performing a film forming process on the substrate in a second chamber different from the first chamber,
Forming a third magnetic layer, a fourth magnetic layer, and a Ta layer by performing film formation on the substrate in a third chamber different from the first chamber and the second chamber; A method for manufacturing a magnetoresistive effect element.

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