JP4881497B2 - 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置 - Google Patents

化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置 Download PDF

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Publication number
JP4881497B2
JP4881497B2 JP05165098A JP5165098A JP4881497B2 JP 4881497 B2 JP4881497 B2 JP 4881497B2 JP 05165098 A JP05165098 A JP 05165098A JP 5165098 A JP5165098 A JP 5165098A JP 4881497 B2 JP4881497 B2 JP 4881497B2
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Japan
Prior art keywords
substrate
edge
vapor deposition
titanium nitride
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP05165098A
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English (en)
Japanese (ja)
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JPH10303148A (ja
JPH10303148A5 (enExample
Inventor
ジョー・ダブリュー・ザオ
ウェイ−ジェン・シア
ウィルバー・ジー・キャタベイ
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LSI Corp
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LSI Logic Corp
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Publication date
Application filed by LSI Logic Corp filed Critical LSI Logic Corp
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Publication of JPH10303148A5 publication Critical patent/JPH10303148A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP05165098A 1997-03-04 1998-03-04 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置 Expired - Fee Related JP4881497B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/811,818 US5789028A (en) 1997-03-04 1997-03-04 Method for eliminating peeling at end of semiconductor substrate in metal organic chemical vapor deposition of titanium nitride
US811818 1997-03-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009223007A Division JP2010077534A (ja) 1997-03-04 2009-09-28 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置

Publications (3)

Publication Number Publication Date
JPH10303148A JPH10303148A (ja) 1998-11-13
JPH10303148A5 JPH10303148A5 (enExample) 2005-09-02
JP4881497B2 true JP4881497B2 (ja) 2012-02-22

Family

ID=25207680

Family Applications (2)

Application Number Title Priority Date Filing Date
JP05165098A Expired - Fee Related JP4881497B2 (ja) 1997-03-04 1998-03-04 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置
JP2009223007A Pending JP2010077534A (ja) 1997-03-04 2009-09-28 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009223007A Pending JP2010077534A (ja) 1997-03-04 2009-09-28 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置

Country Status (2)

Country Link
US (1) US5789028A (enExample)
JP (2) JP4881497B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087259A (en) * 1996-06-24 2000-07-11 Hyundai Electronics Industries Co., Ltd. Method for forming bit lines of semiconductor devices
US6071562A (en) * 1998-05-07 2000-06-06 Lsi Logic Corporation Process for depositing titanium nitride films
SG87084A1 (en) * 1999-02-09 2002-03-19 Applied Materials Inc Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature
US6468604B1 (en) 1999-03-17 2002-10-22 Anelva Corporation Method for manufacturing a titanium nitride thin film
WO2003064718A2 (en) * 2002-01-29 2003-08-07 Sulzer Metco (Us) Inc. Method for selectively coating a portion of a substrate with a gas-carried substance
KR100534209B1 (ko) * 2003-07-29 2005-12-08 삼성전자주식회사 반도체소자 제조용 화학기상증착 공정설비
JP4520717B2 (ja) * 2003-09-24 2010-08-11 キヤノンアネルバ株式会社 薄膜形成方法
US20050103265A1 (en) * 2003-11-19 2005-05-19 Applied Materials, Inc., A Delaware Corporation Gas distribution showerhead featuring exhaust apertures
US10468264B2 (en) 2016-07-04 2019-11-05 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
CN114402416A (zh) * 2019-07-17 2022-04-26 朗姆研究公司 用于衬底处理的氧化分布调节
KR102505474B1 (ko) 2019-08-16 2023-03-03 램 리써치 코포레이션 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578532A (en) * 1990-07-16 1996-11-26 Novellus Systems, Inc. Wafer surface protection in a gas deposition process
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing
US5238499A (en) * 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
EP0732731A3 (en) * 1995-03-13 1997-10-08 Applied Materials Inc Treatment of a titanium nitride layer to improve resistance to higher temperatures

Also Published As

Publication number Publication date
JPH10303148A (ja) 1998-11-13
JP2010077534A (ja) 2010-04-08
US5789028A (en) 1998-08-04

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