JP4878819B2 - Novel triazine derivative and organic electroluminescence device containing the same - Google Patents
Novel triazine derivative and organic electroluminescence device containing the same Download PDFInfo
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- JP4878819B2 JP4878819B2 JP2005334956A JP2005334956A JP4878819B2 JP 4878819 B2 JP4878819 B2 JP 4878819B2 JP 2005334956 A JP2005334956 A JP 2005334956A JP 2005334956 A JP2005334956 A JP 2005334956A JP 4878819 B2 JP4878819 B2 JP 4878819B2
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- organic electroluminescence
- triazine derivative
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- 238000005401 electroluminescence Methods 0.000 title claims description 41
- 150000003918 triazines Chemical class 0.000 title claims description 29
- 239000000463 material Substances 0.000 claims description 68
- 238000001296 phosphorescence spectrum Methods 0.000 claims description 6
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 2
- 125000004076 pyridyl group Chemical group 0.000 claims description 2
- 125000005493 quinolyl group Chemical group 0.000 claims description 2
- 125000001424 substituent group Chemical group 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 137
- 150000001875 compounds Chemical class 0.000 description 55
- 230000005525 hole transport Effects 0.000 description 41
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 34
- 238000002347 injection Methods 0.000 description 32
- 239000007924 injection Substances 0.000 description 32
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 30
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 27
- 239000002904 solvent Substances 0.000 description 23
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 21
- -1 4,6-difluorophenyl Chemical group 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 13
- 238000005160 1H NMR spectroscopy Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 238000000862 absorption spectrum Methods 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 238000002189 fluorescence spectrum Methods 0.000 description 10
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 10
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 9
- 239000007983 Tris buffer Substances 0.000 description 9
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 150000003852 triazoles Chemical class 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- 238000001194 electroluminescence spectrum Methods 0.000 description 8
- 230000000704 physical effect Effects 0.000 description 8
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 7
- 230000005281 excited state Effects 0.000 description 7
- 238000000746 purification Methods 0.000 description 7
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- IWHHYACTSSPXDV-UHFFFAOYSA-N 2,4,6-tris(3-bromophenyl)-1,3,5-triazine Chemical compound BrC1=CC=CC(C=2N=C(N=C(N=2)C=2C=C(Br)C=CC=2)C=2C=C(Br)C=CC=2)=C1 IWHHYACTSSPXDV-UHFFFAOYSA-N 0.000 description 6
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 238000004440 column chromatography Methods 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 0 Bc1cccc(/C2=*/C(/c3cccc(Br)c3)=N/C(/c3cccc(Br)c3)=C/C*2)c1 Chemical compound Bc1cccc(/C2=*/C(/c3cccc(Br)c3)=N/C(/c3cccc(Br)c3)=C/C*2)c1 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- WEDZYOMKTHKKLC-UHFFFAOYSA-N 2,4,6-tris(3-pyridin-3-ylphenyl)-1,3,5-triazine Chemical compound C1=CC(=CN=C1)C1=CC=CC(=C1)C1=NC(=NC(=N1)C1=CC(=CC=C1)C1=CN=CC=C1)C1=CC(=CC=C1)C1=CN=CC=C1 WEDZYOMKTHKKLC-UHFFFAOYSA-N 0.000 description 3
- NUFBMYOAUJDVBI-UHFFFAOYSA-N 2,4,6-tris(3-pyridin-4-ylphenyl)-1,3,5-triazine Chemical compound C1=CC(=CC(=C1)C1=CC=NC=C1)C1=NC(=NC(=N1)C1=CC(=CC=C1)C1=CC=NC=C1)C1=CC(=CC=C1)C1=CC=NC=C1 NUFBMYOAUJDVBI-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- UKSZBOKPHAQOMP-SVLSSHOZSA-N (1e,4e)-1,5-diphenylpenta-1,4-dien-3-one;palladium Chemical compound [Pd].C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 UKSZBOKPHAQOMP-SVLSSHOZSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- XAGZJIQIVXSURR-UHFFFAOYSA-N 1-[4-(trifluoromethyl)phenyl]piperidin-2-one Chemical group C1=CC(C(F)(F)F)=CC=C1N1C(=O)CCCC1 XAGZJIQIVXSURR-UHFFFAOYSA-N 0.000 description 2
- RXELBMYKBFKHSM-UHFFFAOYSA-N 2-phenyl-1,3,5-triazine Chemical compound C1=CC=CC=C1C1=NC=NC=N1 RXELBMYKBFKHSM-UHFFFAOYSA-N 0.000 description 2
- STXAVEHFKAXGOX-UHFFFAOYSA-N 3-bromobenzonitrile Chemical compound BrC1=CC=CC(C#N)=C1 STXAVEHFKAXGOX-UHFFFAOYSA-N 0.000 description 2
- CTDWGEUMCAZCMC-UHFFFAOYSA-N COC(N=C1)=CC=C1C1=CC=CC(C2=NC(C3=CC(C(C=N4)=CC=C4OC)=CC=C3)=NC(C3=CC(C(C=N4)=CC=C4OC)=CC=C3)=N2)=C1 Chemical compound COC(N=C1)=CC=C1C1=CC=CC(C2=NC(C3=CC(C(C=N4)=CC=C4OC)=CC=C3)=NC(C3=CC(C(C=N4)=CC=C4OC)=CC=C3)=N2)=C1 CTDWGEUMCAZCMC-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 229910001508 alkali metal halide Inorganic materials 0.000 description 2
- 150000008045 alkali metal halides Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- IPWKHHSGDUIRAH-UHFFFAOYSA-N bis(pinacolato)diboron Chemical compound O1C(C)(C)C(C)(C)OB1B1OC(C)(C)C(C)(C)O1 IPWKHHSGDUIRAH-UHFFFAOYSA-N 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- YVVVSJAMVJMZRF-UHFFFAOYSA-N c1cncc(c1)-c1cccc(c1)-c1cccc(c1)-c1nc(nc(n1)-c1cccc(c1)-c1cccc(c1)-c1cccnc1)-c1cccc(c1)-c1cccc(c1)-c1cccnc1 Chemical compound c1cncc(c1)-c1cccc(c1)-c1cccc(c1)-c1nc(nc(n1)-c1cccc(c1)-c1cccc(c1)-c1cccnc1)-c1cccc(c1)-c1cccc(c1)-c1cccnc1 YVVVSJAMVJMZRF-UHFFFAOYSA-N 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical group 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 125000004552 isoquinolin-4-yl group Chemical group C1=NC=C(C2=CC=CC=C12)* 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- VLRICFVOGGIMKK-UHFFFAOYSA-N pyrazol-1-yloxyboronic acid Chemical compound OB(O)ON1C=CC=N1 VLRICFVOGGIMKK-UHFFFAOYSA-N 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 2
- KZPYGQFFRCFCPP-UHFFFAOYSA-N 1,1'-bis(diphenylphosphino)ferrocene Chemical compound [Fe+2].C1=CC=C[C-]1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=C[C-]1P(C=1C=CC=CC=1)C1=CC=CC=C1 KZPYGQFFRCFCPP-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- JIHQDMXYYFUGFV-UHFFFAOYSA-N 1,3,5-triazine Chemical compound C1=NC=NC=N1 JIHQDMXYYFUGFV-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- JPDUPGAVXNALOL-UHFFFAOYSA-N 1-n,1-n,4-n,4-n-tetraphenylbenzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 JPDUPGAVXNALOL-UHFFFAOYSA-N 0.000 description 1
- SPDPTFAJSFKAMT-UHFFFAOYSA-N 1-n-[4-[4-(n-[4-(3-methyl-n-(3-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-4-n,4-n-bis(3-methylphenyl)-1-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SPDPTFAJSFKAMT-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- KYYKGOURQXPERA-UHFFFAOYSA-N 2-methoxy-5-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)pyridin-3-amine Chemical compound C1=C(N)C(OC)=NC=C1B1OC(C)(C)C(C)(C)O1 KYYKGOURQXPERA-UHFFFAOYSA-N 0.000 description 1
- BHVDTLKQNMCWNY-UHFFFAOYSA-N 3-(1-chlorocyclohexa-2,4-dien-1-yl)pyridine Chemical compound C=1C=CN=CC=1C1(Cl)CC=CC=C1 BHVDTLKQNMCWNY-UHFFFAOYSA-N 0.000 description 1
- KVEIJNJPKCWYQF-UHFFFAOYSA-N 3-[3-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl]pyridine Chemical compound O1C(C)(C)C(C)(C)OB1C1=CC=CC(C=2C=NC=CC=2)=C1 KVEIJNJPKCWYQF-UHFFFAOYSA-N 0.000 description 1
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- ZNJRONVKWRHYBF-VOTSOKGWSA-N 4-(dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4h-pyran Chemical compound O1C(C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(CCCN2CCC3)=C2C3=C1 ZNJRONVKWRHYBF-VOTSOKGWSA-N 0.000 description 1
- BCJVBDBJSMFBRW-UHFFFAOYSA-N 4-diphenylphosphanylbutyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)CCCCP(C=1C=CC=CC=1)C1=CC=CC=C1 BCJVBDBJSMFBRW-UHFFFAOYSA-N 0.000 description 1
- FPMQTZDVSUPPCB-UHFFFAOYSA-N 9-(4-carbazol-9-ylphenyl)carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 FPMQTZDVSUPPCB-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
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- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 230000005283 ground state Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- LHJOPRPDWDXEIY-UHFFFAOYSA-N indium lithium Chemical compound [Li].[In] LHJOPRPDWDXEIY-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- NSABRUJKERBGOU-UHFFFAOYSA-N iridium(3+);2-phenylpyridine Chemical compound [Ir+3].[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 NSABRUJKERBGOU-UHFFFAOYSA-N 0.000 description 1
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- 229910052744 lithium Inorganic materials 0.000 description 1
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- 238000004020 luminiscence type Methods 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
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- 150000002940 palladium Chemical class 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
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- 235000011056 potassium acetate Nutrition 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
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- QDRKDTQENPPHOJ-UHFFFAOYSA-N sodium ethoxide Chemical compound [Na+].CC[O-] QDRKDTQENPPHOJ-UHFFFAOYSA-N 0.000 description 1
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- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
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- 238000000859 sublimation Methods 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- YGUPAQDKOAPZHC-UHFFFAOYSA-N tricyclohexylphosphane Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1.C1CCCCC1P(C1CCCCC1)C1CCCCC1 YGUPAQDKOAPZHC-UHFFFAOYSA-N 0.000 description 1
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 description 1
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- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 1
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Images
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- Electroluminescent Light Sources (AREA)
- Plural Heterocyclic Compounds (AREA)
Description
本発明は、新規なリン光材料、とくに青色リン光材料に適したワイドギャップな電子輸送層を形成するのに有用な新規なトリアジン誘導体およびそれを含む有機エレクトロルミネッセンス素子に関する。 The present invention relates to a novel triazine derivative useful for forming a wide-gap electron transport layer suitable for a novel phosphorescent material, particularly a blue phosphorescent material, and an organic electroluminescence device including the same.
有機EL素子は、電極から注入された正孔と電子の再結合によって生成した励起エネルギーが発光過程を経て基底状態に緩和されることにより自発光する。しかしながら、正孔と電子の再結合によって生成する励起状態には一重項励起状態と三重項励起状態の2種類がそれぞれ1対3の割合で存在する。これまでの多くは一重項励起状態からの発光を利用した蛍光材料が発光材料に利用されていたため、内部量子効率が最大で25%であるので、この時取り出し効率を20%とすると、最大外部量子効率は5%が理論限界であった。 The organic EL element emits light when excitation energy generated by recombination of holes and electrons injected from the electrode is relaxed to a ground state through a light emission process. However, there are two types of excited states generated by recombination of holes and electrons, a singlet excited state and a triplet excited state in a ratio of 1: 3. In many cases, a fluorescent material utilizing light emission from a singlet excited state has been used as a light emitting material, and therefore, the internal quantum efficiency is 25% at the maximum. The quantum efficiency was the theoretical limit of 5%.
近年、イリジウムやプラチナなどの重原子効果を利用した錯体化合物を用い三重項励起状態からの発光、すなわちリン光発光を用いることにより発光効率の向上が報告されるようになった(例えば、非特許文献1)。一重項励起状態に加え、三重項励起状態からの発光を利用することで最大内部量子効率は理論上100%に到達することが可能で、リン光材料は発光材料として注目を浴びている。 In recent years, improvement in luminous efficiency has been reported by using light emission from a triplet excited state, that is, phosphorescence emission, using a complex compound utilizing a heavy atom effect such as iridium or platinum (for example, non-patented) Reference 1). The maximum internal quantum efficiency can theoretically reach 100% by utilizing light emission from the triplet excited state in addition to the singlet excited state, and phosphorescent materials are attracting attention as light emitting materials.
例えば緑色材料として、下記式
また安達らによる非特許文献2などにより青色発光材料である下記式
その結果最近ではS.R.Forrestらによる非特許文献3では下記式
これら発光材料を効率よく発光させるには正孔と電子の注入バランスを整えて、発光層の中で十分にこれらのキャリアーの再結合が行えるように正孔輸送剤や電子輸送剤などを選択しなければならない。
特に青色リン光材料についてはエネルギーギャップが大きいためにワイドギャップ化された正孔輸送剤や電子輸送剤が必要になってくる。現在これらリン光材料については、電子輸送材料に従来から使用されているAlq3〔トリス(8−キノリノラト)アルミニウム〕やBAlq2〔ビス(2−メチル−8−キノリノラト)アルミニウム−p−フェニルフェノラート〕等が使用されているが、リン光材料に使用するには十分なエネルギーギャップを持ち合わせていないため新規なワイドギャップな電子輸送材料の開発が必要である。
In order for these luminescent materials to emit light efficiently, the hole and electron injection balance is adjusted, and a hole transport agent or electron transport agent is selected so that these carriers can be sufficiently recombined in the light emitting layer. There must be.
In particular, since the blue phosphorescent material has a large energy gap, a wide gap hole transport agent or electron transport agent is required. For these phosphorescent materials, Alq 3 [tris (8-quinolinolato) aluminum] and BAlq 2 [bis (2-methyl-8-quinolinolato) aluminum-p-phenylphenolate, which are conventionally used for electron transport materials, are used. However, since it does not have a sufficient energy gap for use in phosphorescent materials, it is necessary to develop a new wide gap electron transport material.
本発明の第1の目的は、新規なトリアジン誘導体を提供する点にある。本発明の第2の目的は、それを用いた新規な有機エレクトロルミネッセンス素子を提供する点にある。 The first object of the present invention is to provide a novel triazine derivative. The second object of the present invention is to provide a novel organic electroluminescence device using the same.
本発明の第1は、下記一般式(1)で示されるトリアジン誘導体に関する。
本発明の第2は、3.4eV以上の広いエネルギーギャップ(Eg)を有する請求項1記載のトリアジン誘導体に関する。
本発明の有機エレクトロルミネッセンス素子に用いられる一般式(1)で表される化合物はバンドギャップが3.4eV以上の値を示すことが好ましい。バンドギャップが上記の値を示すことで電子輸送性を保持し正孔ブロック効果が期待でき、発光効率の向上が期待できる。また特に青色リン光材料を発光させるには大きなバンドギャップが必要である。
バンドギャップとは、化合物のイオン化ポテンシャル(Ip)と電子親和力(Ea)の差を表す。化合物のイオン化ポテンシャル(Ip)と電子親和力(Ea)は一般に真空準位を基準に決定される。イオン化ポテンシャル(Ip)は化合物のHOMO(最高被占分子軌道)レベルにある電子を真空準位に放出するのに必要なエネルギーのことであり、一方、電子親和力(Ea)は真空準位にある電子が物質のLUMO(最低空分子軌道)レベルに落ちて安定化するエネルギーのことである。
イオン化ポテンシャル(Ip)と電子親和力(Ea)の差は、エネルギーギャップ(Eg)として化合物の吸収スペクトルの吸収端より求めることができる。
一般に以下の式で求めることができる。吸収端の波長をWnmとすればそのときのエネルギーギャップEgは
Eg=1240÷W
で求めることができる。
本発明の第3は、500nmよりも短波長に低温リン光スペクトルの発光端を示す請求項1または2記載のトリアジン誘導体に関する。
本発明の有機エレクトロルミネッセンス素子に用いられる一般式(1)で表される化合物は低温リン光の発光端が500nm以下の値を示すことが好ましい。低温リン光スペクトルの測定は、リン光材料が一般に室温で測定することが困難であり、被測定物を液体ヘリウムなどで冷却した状態で測定する。これを測定することで組み合せるリン光発光材料へのエネルギーの移動がスムーズに起こるかどうかの判断がつく。特に青色リン光材料との組合せの場合、発光端の値が500nm以下でないとスムーズなエネルギー移動が起こりえない。
本発明の第4は、請求項1〜3いずれか記載のトリアジン誘導体を含有することを特徴とする有機エレクトロルミネッセンス素子に関する。
本発明の第5は、請求項1〜3いずれか記載のトリアジン誘導体を電子輸送材料として使用したことを特徴とする有機エレクトロルミネッセンス素子に関する。
本発明の第6は、請求項2記載のトリアジン誘導体とリン光発光材料を併用したことを特徴とする有機エレクトロルミネッセンス素子に関する。
本発明の第7は、請求項3記載のトリアジン誘導体とリン光発光材料を併用したことを特徴とする有機エレクトロルミネッセンス素子に関する。
The first of the present invention relates to a triazine derivative represented by the following general formula (1) .
The second invention relates to a triazine derivative according to claim 1 Symbol mounting having a more wide energy gap 3.4 eV (Eg).
The compound represented by the general formula (1 ) used for the organic electroluminescence device of the present invention preferably has a band gap of 3.4 eV or more. When the band gap shows the above value, the electron transport property can be maintained, the hole blocking effect can be expected, and the light emission efficiency can be expected to be improved. In particular, a large band gap is required for emitting a blue phosphorescent material.
The band gap represents the difference between the ionization potential (Ip) and the electron affinity (Ea) of the compound. The ionization potential (Ip) and electron affinity (Ea) of a compound are generally determined based on the vacuum level. The ionization potential (Ip) is the energy required to release electrons at the HOMO (highest occupied molecular orbital) level of a compound to the vacuum level, while the electron affinity (Ea) is at the vacuum level. This is the energy at which electrons fall to the LUMO (lowest molecular orbital) level of a material and stabilize.
The difference between the ionization potential (Ip) and the electron affinity (Ea) can be obtained from the absorption edge of the absorption spectrum of the compound as an energy gap (Eg).
Generally, it can obtain | require with the following formula | equation. If the wavelength of the absorption edge is Wnm, then the energy gap Eg is
Eg = 1240 ÷ W
Can be obtained.
3rd of this invention is related with the triazine derivative of
It is preferable that the compound represented by General formula (1 ) used for the organic electroluminescent element of this invention shows the value of the light emission edge of low-temperature phosphorescence of 500 nm or less. The measurement of the low-temperature phosphorescence spectrum is generally difficult for a phosphorescent material to be measured at room temperature, and the measurement is performed in a state where an object to be measured is cooled with liquid helium or the like. By measuring this, it is possible to judge whether or not energy transfer to the phosphorescent material to be combined occurs smoothly. In particular, in the case of a combination with a blue phosphorescent material, smooth energy transfer cannot occur unless the value of the emission edge is 500 nm or less.
4th of this invention is related with the organic electroluminescent element characterized by containing the triazine derivative in any one of Claims 1-3 .
5th of this invention is related with the organic electroluminescent element characterized by using the triazine derivative in any one of Claims 1-3 as an electron transport material.
6th of this invention is related with the organic electroluminescent element characterized by using together the triazine derivative of
A seventh aspect of the present invention relates to an organic electroluminescence device characterized in that the triazine derivative according to
本発明の一般式(1)で示されるトリアジン誘導体は、下記一般式(2)
で示されるハロゲン化トリアジン化合物を原料とし、塩基、触媒および溶媒の存在下において、下記一般式(3)
In the presence of a base, a catalyst and a solvent, the following general formula (3)
これらの反応で使用する溶媒は、トルエン、トルエン−アルコール混合溶媒、ジメトキシエタンなどが使用できる。またこの反応で使用する塩基については、炭酸ナトリウム、炭酸カリウム、炭酸セシウム、炭酸水素ナトリウム、炭酸水素カリウム、リン酸カリウム、水酸化リチウム、水酸化ナトリウム、水酸化カリウムのような無機アルカリ金属塩、トリエチルアミンのような有機塩基、ナトリウムメトキシド、ナトリウムエトキシド、ナトリウムt−ブトキシド、カリウムt−ブトキシドのような有機アルカリ金属塩、テトラブチルアンモニウムヒドロキシド1Mメタノール溶液等の有機塩基化合物の有機溶液等が使用できる。また、触媒で使用するパラジウム触媒については、テトラキス(トリフェニルホスフィノ)パラジウムが好ましいが、酢酸パラジウムやビス(トリフェニルホスフィン)パラジウムジクロライド、ビス〔1,1′−ビス(ジフェニルホスフィノ)フェロセン〕パラジウムジクロライド、ビス〔1,4−ビス(ジフェニルホスフィノ)ブタン〕パラジウムジクロライドなどの0価の有機パラジウム錯体が使用できる。
また、これらの反応で使用するアリールホウ酸化合物については、対応するアリールハロゲン化合物を無水のジエチルエーテルやテトラヒドロフランなどのエーテル溶媒中でn−ブチルリチウムなどでリチオ化し、これにトリメトキシボラン、トリエトキシボロン、トリイソプロピルボロン、ピナコールボロンやビス(ピナコラート)ジボロンなどと作用させることにより容易に合成することができる。
As a solvent used in these reactions, toluene, a toluene-alcohol mixed solvent, dimethoxyethane, or the like can be used. Regarding the base used in this reaction, inorganic alkali metal salts such as sodium carbonate, potassium carbonate, cesium carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, potassium phosphate, lithium hydroxide, sodium hydroxide, potassium hydroxide, Organic bases such as triethylamine, organic alkali metal salts such as sodium methoxide, sodium ethoxide, sodium t-butoxide, potassium t-butoxide, organic base compounds such as tetrabutylammonium hydroxide 1M methanol solution, etc. Can be used. The palladium catalyst used in the catalyst is preferably tetrakis (triphenylphosphino) palladium, but palladium acetate, bis (triphenylphosphine) palladium dichloride, bis [1,1'-bis (diphenylphosphino) ferrocene] Zero-valent organic palladium complexes such as palladium dichloride and bis [1,4-bis (diphenylphosphino) butane] palladium dichloride can be used.
For the aryl boric acid compounds used in these reactions, the corresponding aryl halogen compounds are lithiated with n-butyllithium in an ether solvent such as anhydrous diethyl ether or tetrahydrofuran, and trimethoxyborane or triethoxyboron is added thereto. , Triisopropylboron, pinacolboron, bis (pinacolato) diboron and the like can be easily synthesized.
これらの反応は下記反応式に示すとおりである。(略号は、前述の説明とすべて同じである)
Ar′−Ar−として具体的な例を以下に示す。
本発明のトリアジン誘導体の例を以下に示す。
本発明のトリアジン誘導体は高い電子輸送性能を有する。従って、電子注入材料及び電子輸送材料として使用することができる。
本発明のトリアジン誘導体を有機エレクトロルミネッセンス素子に使用する場合、適当な発光材料(ドーパント)と組み合わせて使用することもできる。
本発明のトリアジン化合物を電子輸送層に用いる場合、電子注入材料、電子輸送材料として使用できる。また他の電子輸送材料と組み合わせて使用することもできる。
The triazine derivative of the present invention has high electron transport performance. Therefore, it can be used as an electron injection material and an electron transport material.
When using the triazine derivative of this invention for an organic electroluminescent element, it can also be used in combination with a suitable luminescent material (dopant).
When the triazine compound of the present invention is used for an electron transport layer, it can be used as an electron injection material or an electron transport material. It can also be used in combination with other electron transport materials.
次に本発明の有機エレクトロルミネッセンス素子について説明する。本発明の有機エレクトロルミネッセンス素子は、陽極と陰極間に一層もしくは多層の有機化合物を積層した素子であり、該有機化合物層の少なくとも一層が本発明トリアジン誘導体を含有する。有機エレクトロルミネッセンス素子が一層の場合、陽極と陰極間に発光層を設けている。発光層は、発光材料を含有しそれに加えて陽極から注入した正孔もしくは陰極から注入した電子を発光材料まで輸送するのが目的で、正孔注入材料もしくは電子注入材料を含有していても良い。多層型の有機エレクトロルミネッセンス素子の構成例としては、例えば陽極/正孔輸送層/発光層/電子輸送層/陰極、陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/陰極、陽極/正孔輸送層/発光層/電子輸送層/電子注入層/陰極、陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極等の多層構成で積層されたものがあげられる。また、必要に応じて陰極上に封止層を有していても良い。 Next, the organic electroluminescence element of the present invention will be described. The organic electroluminescence device of the present invention is a device in which a single layer or a multilayer organic compound is laminated between an anode and a cathode, and at least one layer of the organic compound layer contains the triazine derivative of the present invention. When the organic electroluminescence element is a single layer, a light emitting layer is provided between the anode and the cathode. The light emitting layer contains a light emitting material and may contain a hole injecting material or an electron injecting material for the purpose of transporting holes injected from the anode or electrons injected from the cathode to the light emitting material. . Examples of the configuration of the multilayer organic electroluminescence device include, for example, anode / hole transport layer / light emitting layer / electron transport layer / cathode, anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / cathode. , Anode / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode, anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode, etc. Laminated ones are examples. Moreover, you may have a sealing layer on a cathode as needed.
正孔輸送層、電子輸送層、および発光層のそれぞれの層は、一層構造であっても、多層構造であっても良い。また正孔輸送層、電子輸送層はそれぞれの層で注入機能を受け持つ層(正孔注入層及び電子注入層)と輸送機能を受け持つ層(正孔輸送層および電子輸送層)を別々に設けることもできる。 Each of the hole transport layer, the electron transport layer, and the light emitting layer may have a single layer structure or a multilayer structure. In addition, the hole transport layer and the electron transport layer should be provided separately with a layer responsible for the injection function (hole injection layer and electron injection layer) and a layer responsible for the transport function (hole transport layer and electron transport layer). You can also.
本発明の有機エレクトロルミネッセンス素子は、上記構成例に限らず、種々の構成とすることができる。必要に応じて、正孔輸送層成分と発光層成分、あるいは電子輸送層成分と発光層成分を混合した層を設けても良い。 The organic electroluminescence element of the present invention is not limited to the above configuration example, and can have various configurations. If necessary, a layer in which a hole transport layer component and a light emitting layer component or an electron transport layer component and a light emitting layer component are mixed may be provided.
以下本発明の有機エレクトロルミネッセンス素子の構成要素に関して、陽極/正孔輸送層/発光層/電子輸送層/陰極からなる素子構成を例として取り上げて詳細に説明する。本発明の有機エレクトロルミネッセンス素子は、基板に支持されていることが好ましい。 Hereinafter, the constituent elements of the organic electroluminescence element of the present invention will be described in detail by taking as an example an element structure comprising an anode / hole transport layer / light emitting layer / electron transport layer / cathode. The organic electroluminescence device of the present invention is preferably supported on a substrate.
基板の素材については特に制限はなく、従来の有機エレクトロルミネッセンス素子に慣用されているものであれば良く、例えばガラス、石英ガラス、透明プラスチックなどからなるものを用いることができる。 There is no restriction | limiting in particular about the raw material of a board | substrate, What is necessary is just used for the conventional organic electroluminescent element, For example, what consists of glass, quartz glass, a transparent plastic etc. can be used.
本発明の有機エレクトロルミネッセンス素子の陽極としては、仕事関数の大きな金属単体(4eV以上)、仕事関数の大きな金属同士の合金(4eV以上)または導電性物質およびこれらの混合物を電極材料とすることが好ましい。このような電極材料の具体例としては、金、銀、銅等の金属、ITO(インジウム−スズオキサイド)、酸化スズ(SnO2)、酸化亜鉛(ZnO)などの導電性透明材料、ポリピロール、ポリチオフェン等の導電性高分子材料が挙げられる。陽極はこれらの電極材料を、例えば蒸着、スパッタリング、塗布などの方法により基板上に形成することができる。陽極のシート電気抵抗は数百Ω/cm2以下が好ましい。陽極の膜厚は材料にもよるが、一般に5〜1,000nm程度、好ましくは10〜500nmである。 As an anode of the organic electroluminescence device of the present invention, an electrode material may be a single metal having a high work function (4 eV or more), an alloy of metals having a high work function (4 eV or more), a conductive substance, or a mixture thereof. preferable. Specific examples of such electrode materials include metals such as gold, silver, and copper, conductive transparent materials such as ITO (indium-tin oxide), tin oxide (SnO 2 ), and zinc oxide (ZnO), polypyrrole, and polythiophene. Examples thereof include conductive polymer materials such as For the anode, these electrode materials can be formed on the substrate by a method such as vapor deposition, sputtering, or coating. The sheet electrical resistance of the anode is preferably several hundred Ω / cm 2 or less. The thickness of the anode depends on the material, but is generally about 5 to 1,000 nm, preferably 10 to 500 nm.
陰極としては、仕事関数の小さな金属単体(4eV以下)、仕事関数の小さな金属同士の合金(4eV以下)または導電性物質およびこれらの混合物を電極材料とすることが好ましい。このような電極材料の具体例としては、リチウム、リチウム−インジウム合金、ナトリウム、ナトリウム−カリウム合金、マグネシウム、マグネシウム−銀合金、マグネシウム−インジウム合金、アルミニウム、アルミニウム−リチウム合金、アルミニウム−マグネシウム合金などが挙げられる。陰極はこれらの電極材料を、例えば蒸着、スパッタリングなどの方法により、薄膜を形成させることにより作製することができる。陰極のシート電気抵抗は数百Ω/cm2以下が好ましい。陰極の膜厚は材料にもよるが、一般に5〜1,000nm程度、好ましくは10〜500nmである。本発明の有機エレクトロルミネッセンス素子の発光を効率良く取り出すために、陽極または陰極の少なくとも一方の電極は、透明もしくは半透明であることが好ましい。 As the cathode, an electrode material is preferably a single metal having a small work function (4 eV or less), an alloy of metals having a small work function (4 eV or less), a conductive substance, or a mixture thereof. Specific examples of such electrode materials include lithium, lithium-indium alloy, sodium, sodium-potassium alloy, magnesium, magnesium-silver alloy, magnesium-indium alloy, aluminum, aluminum-lithium alloy, and aluminum-magnesium alloy. Can be mentioned. The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet electrical resistance of the cathode is preferably several hundred Ω / cm 2 or less. The thickness of the cathode depends on the material, but is generally about 5 to 1,000 nm, preferably 10 to 500 nm. In order to efficiently extract light emitted from the organic electroluminescence device of the present invention, at least one of the anode and the cathode is preferably transparent or translucent.
本発明の有機エレクトロルミネッセンス素子の正孔輸送層は、正孔伝達化合物からなるもので、陽極より注入された正孔を発光層に伝達する機能を有している。電界が与えた2つの電極間に正孔伝達化合物が配置されて陽極から正孔が注入された場合、少なくとも10−6cm2/V・秒以上の正孔移動度を有する正孔伝達物質が好ましい。本発明の有機エレクトロルミネッセンス素子に使用する正孔輸送層に使用する正孔伝達物質は、前記の好ましい性質を有するものであれば特に制限はない。従来から光導電材料において正孔の電荷注入輸送材料として慣用されているものや有機エレクトロルミネッセンス素子の正孔輸送層に使用されている公知の材料の中から任意のものを選択して用いることができる。 The hole transport layer of the organic electroluminescence device of the present invention is made of a hole transfer compound and has a function of transferring holes injected from the anode to the light emitting layer. When a hole transport compound is disposed between two electrodes to which an electric field is applied and holes are injected from the anode, a hole transport material having a hole mobility of at least 10 −6 cm 2 / V · second or more is obtained. preferable. The hole transport material used for the hole transport layer used in the organic electroluminescence device of the present invention is not particularly limited as long as it has the above-mentioned preferable properties. It is possible to select and use any of the materials conventionally used as hole charge injection / transport materials in photoconductive materials and known materials used for the hole transport layer of organic electroluminescent devices. it can.
前記の正孔伝達物質としては、例えば銅フタロシアニンなどのフタロシアニン誘導体、N,N,N′,N′−テトラフェニル−1,4−フェニレンジアミン、N,N′−ジ(m−トリル)−N,N′−ジフェニル−4,4′−ジアミノビフェニル(TPD)、N,N′−ジ(1−ナフチル)−N,N′−ジフェニル−4,4′−ジアミノビフェニル(α−NPD)、等のトリアリールアミン誘導体、ポリフェニレンジアミン誘導体、ポリチオフェン誘導体、および水溶性のPEDOT−PSS(ポリエチレンジオキサチオフェン−ポリスチレンスルホン酸)が挙げられる。正孔輸送層は、これらの他の正孔伝達化合物一種または二種以上からなる一層で構成されたもので良く、前記の正孔伝達物質とは別の化合物からなる正孔輸送層を積層したものでもよい。 Examples of the hole transfer material include phthalocyanine derivatives such as copper phthalocyanine, N, N, N ′, N′-tetraphenyl-1,4-phenylenediamine, and N, N′-di (m-tolyl) -N. , N′-diphenyl-4,4′-diaminobiphenyl (TPD), N, N′-di (1-naphthyl) -N, N′-diphenyl-4,4′-diaminobiphenyl (α-NPD), etc. And triarylamine derivatives, polyphenylenediamine derivatives, polythiophene derivatives, and water-soluble PEDOT-PSS (polyethylenedioxathiophene-polystyrenesulfonic acid). The hole transport layer may be composed of one or more of these other hole transport compounds, and a hole transport layer composed of a compound different from the hole transport material is laminated. It may be a thing.
正孔注入材料としては、下記化学式に示すPEDOT:PSS(ポリマー混合物)やDNTPDを挙げることができ、
本発明の有機エレクトロルミネッセンス素子の発光層の発光物質については特に制限されることはなく、従来の公知の化合物の中から任意のものを選択して用いることができる。 The light emitting material of the light emitting layer of the organic electroluminescence device of the present invention is not particularly limited, and any one of conventionally known compounds can be selected and used.
発光材料としては、ペリレン誘導体、ナフタセン誘導体、キナクリドン誘導体、クマリン誘導体(例えばクマリン1、クマリン540、クマリン545など)、ピラン誘導体(例えばDCM−1、DCM−2、DCJTBなど)、有機金属錯体{トリス(8−ヒドロキシキノリノラト)アルミニウム(Alq3)、トリス(4−メチル−8−ヒドロキシキノリノラト)アルミニウム(Almq3)等の蛍光材料や[2−(4,6−ジフルオロフェニル)ピリジル−N,C2′]イリジウム(III)ピコリレート(FIrpic)、トリス[1−(4−(トリフルオロメチル)フェニル)−1H−ピラゾラート,N,C2′]イリジウム(III)(Irtfmppz3)、ビス[2−(4′,6′−ジフルオロフェニル)ピリジナト−N,C2′]テトラキス(1−ピラゾリル)ボレート(Fir6)、トリス(2−フェニルピリジナト)イリジウム(III)[IrPPy]などのリン光材料}などを挙げることができる。
Examples of the light-emitting material include perylene derivatives, naphthacene derivatives, quinacridone derivatives, coumarin derivatives (eg,
発光層は、ホスト材料とゲスト材料(ドーパント)から形成することもできる[Appl.Phys.Lett.,65 3610(1989)]。特にリン光材料を発光層に使用する場合には、ホスト材料が必要であり、使用されるホスト材料としては、4,4′−ジ(N−カルバゾリル)−1,1′−ビフェニル(CBP)、1,4−ジ(N−カルバゾリル)ベンゼン、2,2′−ジ〔4″−(N−カルバゾリル)フェニル〕−1,1′−ビフェニル(4CzPBP)等があげられる。 The light-emitting layer can also be formed of a host material and a guest material (dopant) [Appl. Phys. Lett. 65 3610 (1989)]. Especially when using a phosphorescent material in the light emitting layer, the host materials is required, as the host material that is used, 4,4'-di (N- carbazolyl) -1,1'-biphenyl ( CBP), 1,4-di (N-carbazolyl) benzene, 2,2′-di [4 ″-(N-carbazolyl) phenyl] -1,1′-biphenyl (4CzPBP) and the like.
ゲスト材料は、ホスト材料に対して、好ましくは0.01〜40重量%であり、より好ましくは0.1〜20重量%である。ゲスト材料としては、従来公知のFIrpic(化4)、IrPPy(化3)、Fir6(化6)などを挙げることができる。 The guest material is preferably 0.01 to 40% by weight, more preferably 0.1 to 20% by weight, based on the host material. Examples of guest materials include conventionally known FIrpic (Chemical Formula 4 ), IrPPy (Chemical Formula 3 ), and Fir6 (Chemical Formula 6 ).
本発明の有機エレクトロルミネッセンス素子の電子輸送層の材料としては、本発明のトリアジン誘導体が好ましい。このものは単独で使用できるが他の電子輸送材料と併用しても構わない。 As a material for the electron transport layer of the organic electroluminescence device of the present invention, the triazine derivative of the present invention is preferable. Although this thing can be used independently, you may use together with another electron transport material.
本発明の有機エレクトロルミネッセンス素子は、電子注入性をさらに向上させる目的で、陰極と有機層の間に絶縁体で構成される電子注入層をさらに設けても良い。ここで使用される絶縁体としては、アルカリ金属ハロゲン化物、アルカリ土類金属ハロゲン化物から選択される少なくとも一つの金属化合物を使用することが好ましい。アルカリ金属ハロゲン化物としては、フッ化リチウム、フッ化ナトリウム、フッ化カリウム、フッ化セシウム、塩化リチウム等が挙げられる。アルカリ土類ハロゲン化物としては、フッ化マグネシウム、フッ化カルシウム、フッ化バリウム、フッ化ストロンチウム等が挙げられる。 The organic electroluminescent device of the present invention may further include an electron injection layer composed of an insulator between the cathode and the organic layer for the purpose of further improving the electron injection property. As the insulator used here, it is preferable to use at least one metal compound selected from alkali metal halides and alkaline earth metal halides. Examples of the alkali metal halide include lithium fluoride, sodium fluoride, potassium fluoride, cesium fluoride, and lithium chloride. Examples of the alkaline earth halide include magnesium fluoride, calcium fluoride, barium fluoride, and strontium fluoride.
正孔輸送層、発光層の形成方法については特に限定されるものではない。例えば乾式成膜法(例えば真空蒸着法、イオン化蒸着法など)、湿式成膜法〔溶液塗布法(例えば、スピンコート法、キャスト法、インクジェット法など)〕を使用することができる。本発明のトリアジン化合物の電子輸送層の形成方法については、乾式成膜法(例えば真空蒸着法、イオン化蒸着法)が好ましい。また素子の作製については上記の成膜方法を併用しても構わない。 The method for forming the hole transport layer and the light emitting layer is not particularly limited. For example, a dry film forming method (for example, a vacuum deposition method, an ionization vapor deposition method, etc.) or a wet film forming method [a solution coating method (for example, a spin coating method, a casting method, an ink jet method, etc.)] can be used. As a method for forming the electron transport layer of the triazine compound of the present invention, a dry film forming method (for example, a vacuum evaporation method or an ionization evaporation method) is preferable. In addition, the above-described film formation method may be used in combination for manufacturing the element.
真空蒸着法により正孔輸送層、発光層、電子輸送層等の各層を形成する場合、真空蒸着条件は、特に限定されるものではない。通常10−5Torr程度以下の真空下で50〜500℃程度のボート温度(蒸着源温度)、−50〜300℃程度の基板温度で、0.01〜50nm/sec.程度蒸着することが好ましい。正孔輸送層、発光層、電子輸送層の各層を複数の化合物を使用して形成する場合、化合物を入れた各ボートをそれぞれ温度制御しながら共蒸着することが好ましい。 When forming each layer such as a hole transport layer, a light emitting layer, and an electron transport layer by a vacuum deposition method, the vacuum deposition conditions are not particularly limited. Usually, at a boat temperature (deposition source temperature) of about 50 to 500 ° C. under a vacuum of about 10 −5 Torr or less, at a substrate temperature of about −50 to 300 ° C., 0.01 to 50 nm / sec. Vapor deposition is preferred. When forming each layer of a positive hole transport layer, a light emitting layer, and an electron carrying layer using a some compound, it is preferable to co-evaporate each boat which put the compound, temperature-controlling each.
正孔輸送層、発光層を溶媒塗布法で形成する場合、各層を構成する成分を溶媒に溶解または分散させて塗布液とする。溶媒としては、炭化水素系溶媒(例えば、ヘプタン、トルエン、キシレン、シクロヘキサン等)、ケトン系溶媒(例えばアセトン、メチルエチルケトン、メチルイソブチルケトン等)、ハロゲン系溶媒(例えばジクロロメタン、クロロホルム、クロロベンゼン、ジクロロベンゼン等)、エステル系溶媒(例えば酢酸エチル、酢酸ブチル等)、アルコール系溶媒(例えばメタノール、エタノール、ブタノール、メチルセロソルブ、エチルセロソルブ等)、エーテル系溶媒(例えばジブチルエーテル、テトラヒドロフラン、1,4−ジオキサン、1,2−ジメトキシエタン等)、非プロトン性溶媒(例えばN,N′−ジメチルアセトアミド、ジメチルスルホキシド等)、水等が挙げられる。溶媒は単独で使用しても良く、複数の溶媒を併用しても良い。 When forming the hole transport layer and the light emitting layer by a solvent coating method, the components constituting each layer are dissolved or dispersed in a solvent to obtain a coating solution. Solvents include hydrocarbon solvents (eg, heptane, toluene, xylene, cyclohexane, etc.), ketone solvents (eg, acetone, methyl ethyl ketone, methyl isobutyl ketone, etc.), halogen solvents (eg, dichloromethane, chloroform, chlorobenzene, dichlorobenzene, etc.) ), Ester solvents (eg, ethyl acetate, butyl acetate, etc.), alcohol solvents (eg, methanol, ethanol, butanol, methyl cellosolve, ethyl cellosolve, etc.), ether solvents (eg, dibutyl ether, tetrahydrofuran, 1,4-dioxane, 1,2-dimethoxyethane and the like), aprotic solvents (for example, N, N'-dimethylacetamide, dimethyl sulfoxide and the like), water and the like. The solvent may be used alone, or a plurality of solvents may be used in combination.
正孔輸送層、発光層、電子輸送層等の各層の膜厚は、特に限定されるものではないが、通常5〜5,000nmになるようにする。 The thickness of each layer such as the hole transport layer, the light emitting layer, and the electron transport layer is not particularly limited, but is usually 5 to 5,000 nm.
本発明の有機エレクトロルミネッセンス素子は、酸素や水分等との接触を遮断する目的で保護層(封止層)を設けたり、不活性物質中に素子を封入して保護することができる。不活性物質としては、パラフィン、シリコンオイル、フルオロカーボン等が挙げられる。保護層に使用する材料としては、フッ素樹脂、エポキシ樹脂、シリコーン樹脂、ポリエステル、ポリカーボネート、光硬化性樹脂等が挙げられる。 The organic electroluminescence device of the present invention can be protected by providing a protective layer (sealing layer) for the purpose of blocking contact with oxygen, moisture, or the like, or by encapsulating the device in an inert substance. Examples of the inert substance include paraffin, silicon oil, and fluorocarbon. Examples of the material used for the protective layer include fluorine resin, epoxy resin, silicone resin, polyester, polycarbonate, and photocurable resin.
本発明の有機エレクトロルミネッセンス素子は、通常直流駆動の素子として使用できる。直流電圧を印加する場合、陽極をプラス、陰極をマイナスの極性として電圧を通常1.5〜20V程度印加すると発光が観測される。また、本発明の有機エレクトロルミネッセンス素子は交流駆動の素子としても使用できる。交流電圧を印加する場合には、陽極がプラス、陰極がマイナスの状態になった時に発光する。本発明の有機エレクトロルミネッセンス素子は、例えば電子写真感光体、フラットパネルディスプレイなどの平面発光体、複写機、プリンター、液晶ディスプレイのバックライト、計器等の光源、各種発光素子、各種表示素子、各種標識、各種センサー、各種アクセサリーなどに使用することができる。 The organic electroluminescence device of the present invention can be used as a normal DC drive device. When a DC voltage is applied, light emission is observed when a voltage of about 1.5 to 20 V is applied with the positive polarity of the anode and the negative polarity of the cathode. Moreover, the organic electroluminescent element of this invention can be used also as an element of an alternating current drive. When an AC voltage is applied, light is emitted when the anode is in a positive state and the cathode is in a negative state. The organic electroluminescence device of the present invention includes, for example, a flat light emitter such as an electrophotographic photosensitive member and a flat panel display, a copying machine, a printer, a backlight of a liquid crystal display, a light source such as an instrument, various light emitting devices, various display devices, and various signs. It can be used for various sensors and various accessories.
図50〜63に、本発明の有機エレクトロルミネッセンス素子の好ましい例を示す。
図50は、本発明の有機エレクトロルミネッセンス素子の一例を示す断面図である。図50は、基板1上に陽極2、発光層3および陰極4を順次設けた構成のものである。ここで使用する発光素子は、それ自体が正孔輸送性、電子輸送性及び発光性の機能を単一で有している場合や、それぞれの機能を有する化合物を混合して使用する場合に有用である。
図51は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図51は、基板1上に、陽極2、正孔輸送層5、発光層3及び陰極4を順次設けた構成のものである。この場合、発光層は電子輸送性の機能を有している場合に有用である。
図52は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図52は、基板1上に、陽極2、発光層3、電子輸送層6及び陰極4を順次設けた構成のものである。この場合、発光層は正孔輸送性の機能を有している場合に有用である。
図53は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図53は、基板1上に、陽極2、正孔輸送層5、発光層3、電子輸送層6及び陰極4を順次設けた構成のものである。これは、キャリア輸送と発光の機能を分離したものであり、材料選択の自由度が増すために、発光の高効率化や発光色の自由度が増すことになる。
50 to 63 show preferred examples of the organic electroluminescence element of the present invention.
FIG. 50 is a cross-sectional view showing an example of the organic electroluminescence element of the present invention. FIG. 50 shows a structure in which an
FIG. 51 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 51 shows a configuration in which an
FIG. 52 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 52 shows a structure in which an
FIG. 53 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 53 shows a structure in which an
図54は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図54は、基板1上に、陽極2、正孔注入層7、正孔輸送層5、発光層3、電子輸送層6及び陰極4を順次設けた構成のものである。この場合、正孔注入層7を設けることにより、陽極2と正孔輸送層5の密着性を高めたり、陽極から正孔の注入を良くし、発光素子の低電圧駆動に効果がある。
図55は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図55は、基板1上に、陽極2、正孔輸送層5、発光層3、電子輸送層6、電子注入層8及び陰極4を順次設けた構成のものである。この場合、陰極4から電子の注入を良くし、発光素子の低電圧駆動に効果がある。
図56は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図56は、基板1上に、陽極2、正孔注入層7、正孔輸送層5、発光層3、電子輸送層6、電子注入層8及び陰極4を順次設けた構成のものである。この場合、陽極2から正孔の注入を良くし、陰極4からは電子の注入を良くし、最も低電圧駆動に効果がある構成である。
FIG. 54 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 54 shows a configuration in which an
FIG. 55 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 55 shows a structure in which an
FIG. 56 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 56 shows a structure in which an
図57〜63は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図57〜63は、発光層3と陰極4あるいは電子輸送層6の間に正孔ブロック層9を挿入した構成のものである。陽極から注入された正孔、あるいは発光層3で再結合により生成した励起子が、陰極4側に抜けることを防止する効果があり、有機エレクトロルミネッセンス素子の発光効率の向上に効果がある。
図57〜63で、正孔輸送層5、正孔注入層7、電子輸送層6、電子注入層8、発光層3、正孔ブロック層9のそれぞれの層は、一層構造であっても、多層構造であってもよい。
図50〜63は、あくまで基本的な素子構成であり、本発明の化合物を用いた有機エレクトロルミネッセンス素子の構成は、これに限定されるものではない。
57 to 63 are cross-sectional views showing other examples of the organic electroluminescence element of the present invention. 57 to 63 show a configuration in which a
57 to 63 , each of the
50 to 63 are basic device configurations to the last, and the configuration of the organic electroluminescence device using the compound of the present invention is not limited thereto.
本発明のトリアジン誘導体は、これまで知られている代表的な電子輸送材料Alq3よりも高い電子輸送性能を示すだけでなく、正孔ブロック性が高いため、青色リン光発光素子に用いることで、従来の有機エレクトロルミネッセンス素子よりも高効率発光が可能となった。従って、本発明のトリアジン誘導体は、工業的に極めて重要なものである。 The triazine derivative of the present invention not only exhibits higher electron transport performance than a typical electron transport material Alq 3 known so far, but also has a high hole blocking property, so that it can be used in a blue phosphorescent light emitting device. Thus, it is possible to emit light with higher efficiency than the conventional organic electroluminescence device. Therefore, the triazine derivative of the present invention is extremely important industrially.
本発明のトリアジン誘導体は、実施例に示されるようにこれまで知られている代表的な電子輸送材料Alq3よりも遙かに高い電子輸送性能を示すことがわかる。このため有機エレクトロルミネッセンス素子、有機半導体トランジスタ等の有機半導体デバイスに適した材料を提供することが可能になった。また本発明のトリアジン誘導体を用いることにより、従来の有機エレクトロルミネッセンス素子よりも低い駆動電圧で作動し、発光特性に優れ且つ安定性に優れた長寿命の有機エレクトロルミネッセンス素子を提供することが可能になった。従って本発明のトリアジン誘導体は、工業的に極めて重要なものである。
またトリアジン誘導体は、可視領域に蛍光を持たないためAlq3のような発光機能を示さない。従って電子輸送層として使用した場合Alq3のように有機エレクトロルミネッセンス素子の駆動電圧をあげると発光してくると言うことはない。このため発光材料の選択決定が容易である。
It can be seen that the triazine derivative of the present invention exhibits much higher electron transport performance than the typical electron transport material Alq 3 known so far as shown in the Examples. Therefore, it has become possible to provide materials suitable for organic semiconductor devices such as organic electroluminescence elements and organic semiconductor transistors. In addition, by using the triazine derivative of the present invention, it is possible to provide a long-life organic electroluminescence device that operates at a driving voltage lower than that of a conventional organic electroluminescence device and has excellent light emission characteristics and stability. became. Therefore, the triazine derivative of the present invention is extremely important industrially.
Triazine derivatives do not exhibit a light emitting function like Alq 3 because they do not have fluorescence in the visible region. Therefore, when it is used as an electron transport layer, it does not say that light is emitted when the driving voltage of the organic electroluminescence element is increased as in Alq 3 . For this reason, the selection of the light emitting material is easy.
以下に実施例を挙げて本発明を説明するが、本発明はこれにより何ら限定されるものではない。 Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited thereto.
実施例1
(1)2,4,6−トリス(m−ブロモフェニル)−1,3,5−トリアジン(TmBrPhTAZ)
クロロホルム/n−ヘキサンによる再結晶を行い、白い固体を得た。収率:26.6mol%。
構造確認は1H−NMRで行った。
(2)2,4,6−トリス〔3−(イソキノリニ−4−イル)フェニル〕−1,3,5−トリアジン(TmiQPhTAZ)の合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/メタノ−ル=15/1)を行い、2,4,6−トリス〔3−(イソキノリニ−4−イル)フェニル−1,3,5−トリアジン〕(TmiQPhTAZ)の白い固体を得た。収率:84.5mol%。
構造確認は1H−NMRで行った。その結果は図1に示す。
また、実施例1の化合物の蒸着膜の吸収スペクトルと蛍光スペクトルは図6に示し、その物性は表1に示す。
Example 1
(1) 2,4,6-tris (m-bromophenyl) -1,3,5-triazine (TmBrPhTAZ)
Recrystallization with chloroform / n-hexane gave a white solid. Yield: 26.6 mol%.
The structure was confirmed by 1 H-NMR.
(2) Synthesis of 2,4,6-tris [3- (isoquinolin-4-yl) phenyl] -1,3,5-triazine (TmiQPhTAZ)
Purification is performed by column chromatography (developing solvent: chloroform / methanol = 15/1), and 2,4,6-tris [3- (isoquinolin-4-yl) phenyl-1,3,5-triazine]. A white solid of (TmiQPhTAZ) was obtained. Yield: 84.5 mol%.
The structure was confirmed by 1 H-NMR. The result is shown in FIG.
Further, the absorption spectrum and fluorescence spectrum of the deposited film of the compound of Example 1 is shown in FIG. 6, the physical properties thereof are shown in Table 1.
実施例2
2,4,6−トリス〔3−(ピリジニ−3−イル)フェニル〕−1,3,5−トリアジン(TmPyPhTAZ)の合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/メタノール=20/1)を行い、2,4,6−トリス〔3−(ピリジニ−3−イル)フェニル〕−1,3,5−トリアジン(TmPyPhTAZ)の白い固体を得た。収率:86.0mol%。
構造確認は1H−NMRで行った。その結果を図2に示す。
また、実施例2の化合物の蒸着膜の吸収スペクトルと蛍光スペクトルは図7に示し、その物性は表1に示す。
Example 2
Synthesis of 2,4,6-tris [3- (pyridin-3-yl) phenyl] -1,3,5-triazine (TmPyPhTAZ)
Purification is performed by column chromatography (developing solvent: chloroform / methanol = 20/1), and 2,4,6-tris [3- (pyridin-3-yl) phenyl] -1,3,5-triazine (TmPyPhTAZ). ) White solid was obtained. Yield: 86.0 mol%.
The structure was confirmed by 1 H-NMR. The result is shown in FIG.
Further, the absorption spectrum and fluorescence spectrum of the deposited film of the compound of Example 2 is shown in FIG. 7, the physical properties thereof are shown in Table 1.
実施例3
2,4,6−トリス〔3−(ピリジニ−4−イル)フェニル〕−1,3,5−トリアジン(Tm4PyPhTAZ)の合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/メタノール=18/1)を行い、2,4,6−トリス〔3−(ピリジニ−4−イル)フェニル〕−1,3,5−トリアジン(Tm4PyPhTAZ)の白い固体を得た。収率:49.9mol%。さらに、昇華精製を行い、無色の固体を得た。
構造確認は1H−NMRで行った。その結果は、図3に示す。また、実施例3の化合物の蒸着膜の吸収スペクトルと蛍光スペクトルを図8に示し、その物性を表1に示す。
図12は、実施例2の化合物(TmPyPhTAZ)、実施例3の化合物(Tm4PyPhTAZ)およびTAZ(トリアゾール)のリン光スペクトルを示すグラフである。このグラフから明らかなようにリン光スペクトルの面からみると、この3つの化合物のなかでTAZが最も悪い。実施例3のTm4PyPhTAZのスペクトルは、430nm付近から急激に上昇している。また、実施例2のTmPyPhTAZのスペクトルは、450nm付近から急激に上昇している。それに対してTAZのスペクトルの上昇し始めている波長は470nm付近で、他の2つの実施例化合物よりも長波長側になっていることが分る。このことから、TAZの三重項レベルが他の2つの実施例化合物よりも低いことが分る。つまり、実施例2と3の化合物は、TAZよりも三重項レベルが高く、ワイドギャップであることが分る。
Example 3
Synthesis of 2,4,6-tris [3- (pyridin-4-yl) phenyl] -1,3,5-triazine (Tm4PyPhTAZ)
Purification is performed by column chromatography (developing solvent: chloroform / methanol = 18/1), and 2,4,6-tris [3- (pyridin-4-yl) phenyl] -1,3,5-triazine (Tm4PyPhTAZ). ) White solid was obtained. Yield: 49.9 mol%. Further, purification by sublimation was performed to obtain a colorless solid.
The structure was confirmed by 1 H-NMR. The result is shown in FIG. Further, FIG. 8 shows the absorption spectrum and fluorescence spectrum of the vapor-deposited film of the compound of Example 3, and Table 1 shows the physical properties thereof.
FIG. 12 is a graph showing phosphorescence spectra of the compound of Example 2 (TmPyPhTAZ), the compound of Example 3 (Tm4PyPhTAZ), and TAZ (triazole). As is apparent from this graph, TAZ is the worst among these three compounds in terms of phosphorescence spectrum. The spectrum of Tm4PyPhTAZ in Example 3 rises rapidly from around 430 nm. In addition, the spectrum of TmPyPhTAZ in Example 2 rises rapidly from around 450 nm. On the other hand, it can be seen that the wavelength at which the spectrum of TAZ starts to rise is around 470 nm, which is longer than the other two example compounds. This indicates that the triplet level of TAZ is lower than the other two example compounds. That is, it can be seen that the compounds of Examples 2 and 3 have a triplet level higher than TAZ and a wide gap.
実施例4
2,4,6−トリス〔3−(6−メトキシピリジニ−3−イル)フェニル〕−1,3,5−トリアジン(TmMPyPhTAZ)の合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/メタノール=20/1)を行い、2,4,6−トリス〔3−(6−メトキシピリジニ−3−イル)フェニル〕−1,3,5−トリアジン(TmMPyPhTAZ)の白い固体を得た。収率:97.0mol%。
構造確認は1H−NMRで行った。その結果は、図4に示す。また、実施例4の化合物の蒸着膜の吸収スペクトルと蛍光スペクトルを図9に示し、その物性を表1に示す。
Example 4
Synthesis of 2,4,6-tris [3- (6-methoxypyridin-3-yl) phenyl] -1,3,5-triazine (TmMPyPhTAZ)
Purification is performed by column chromatography (developing solvent: chloroform / methanol = 20/1), and 2,4,6-tris [3- (6-methoxypyridin-3-yl) phenyl] -1,3,5 -A white solid of triazine (TmMPyPhTAZ) was obtained. Yield: 97.0 mol%.
The structure was confirmed by 1 H-NMR. The result is shown in FIG. Further, FIG. 9 shows an absorption spectrum and a fluorescence spectrum of the deposited film of the compound of Example 4, and Table 1 shows its physical properties.
実施例5
(1)1−(3−ピリジン)−3−(4,4,5,5−テトラメチル−1,3,2,−ジオキサボロラン−2−イル)−ベンゼン(3PyPhDOB)の合成
精製はカラムクロマトグラフィー法〔展開溶媒:クロロホルム/酢酸エチル=6/1(2回)〕を行い、1−(3−ピリジン)−3−(4,4,5,5−テトラメチル−1,3,2,−ジオキサボロラン−2−イル)−ベンゼン(3PyPhDOB)の薄い黄色の粘体を得た。収率:39.9mol%。
構造確認は1H−NMRで行った。
(2)2,4,6−トリス〔5′−(ピリジニ−3−イル)ビフェニリ−3−イル〕−1,3,5−トリアジン(Tm3PyBPhTAZ)の合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/メタノール=20/1)を行い、アセトンによる再結晶を行い2,4,6−トリス〔5′−(ピリジニ−3−イル)ビフェニリ−3−イル〕−1,3,5−トリアジン(Tm3PyBPhTAZ)の白色の粉末を得た。収率:68.5mol%。
構造確認は1H−NMRで行った。その結果は、図5に示す。また、実施例5の化合物の蒸着膜の吸収スペクトルと蛍光スペクトルを図10に示し、その物性を表1に示す。
Example 5
(1) Synthesis of 1- (3-pyridine) -3- (4,4,5,5-tetramethyl-1,3,2, -dioxaborolan-2-yl) -benzene (3PyPhDOB)
Purification is performed by a column chromatography method [developing solvent: chloroform / ethyl acetate = 6/1 (twice)] to give 1- (3-pyridine) -3- (4,4,5,5-tetramethyl-1, A pale yellow viscous body of 3,2, -dioxaborolan-2-yl) -benzene (3PyPhDOB) was obtained. Yield: 39.9 mol%.
The structure was confirmed by 1 H-NMR.
(2) Synthesis of 2,4,6-tris [5 '-(pyridin-3-yl) biphenyl-3-yl] -1,3,5-triazine (Tm3PyBPhTAZ)
Purification is performed by column chromatography (developing solvent: chloroform / methanol = 20/1), recrystallized from acetone, and 2,4,6-tris [5 '-(pyridin-3-yl) biphenyl-3-yl. A white powder of 1,3,5-triazine (Tm3PyBPhTAZ) was obtained. Yield: 68.5 mol%.
The structure was confirmed by 1 H-NMR. The results are shown in FIG. Further, FIG. 10 shows an absorption spectrum and a fluorescence spectrum of the deposited film of the compound of Example 5 , and Table 1 shows its physical properties.
Tg(二次転移温度)については、DSC(Diffirential Scanning Calorimeter 示差熱量計)中にサンプルを加え、溶融させたものを急冷し、2〜3回繰り返すとガラス転移を表すカーブがチャート上に現れるので、そのカーブを接線で結び、その交点の温度をTgとして採用する。
Tm(融点)は、同じくDSCにサンプルを加え、昇温していくと吸熱カーブが現れるのでその極大のところとの温度を読んで、その温度をTmとする。
Td(分解温度)は、DTA(Differential thermal analyzer 示差熱分析装置)にサンプルを加え、加熱していくとサンプルが熱によって分解し、重量が減少しだす。その減少が開始しだしたところの温度を読んで、その温度をTdとする。
エネルギーギャップ(Eg)については、蒸着機で作成した薄膜を紫外−可視吸光度計で薄膜の吸収曲線を測定する。その薄膜の短波長側の立ち上がりの所に接線を引き、求まった交点の波長W(nm)を次の式に代入し目的の値を求める。それによって得た値がEgになる。
Eg=1240÷W
例えば接線を引いて求めた値W(nm)が470nmだったとしたらこの時のEgの値は
Eg=1240÷470=2.63(eV)
と言うことになる。
Ip(イオン化ポテンシャル)は、イオン化ポテンシャル測定装置(例えば理研計器AC−1)を使用して測定し、測定するサンプルがイオン化を開始しだしたところの電圧(eV)の値を読む。
Ea(電子親和力)は、IpからEgを引いた値である。
本明細書における波長に対する強度(intensity a.u.)の測定は、浜松ホトニクス社製ストリークカメラを用いて、クライオスタット中で4.2Kにおいて測定した。
As for Tg (secondary transition temperature), a sample is added to DSC (Differential Scanning Calorimeter), the melted sample is rapidly cooled, and a curve representing the glass transition appears on the chart when repeated 2-3 times. The curves are connected by tangent lines, and the temperature at the intersection is adopted as Tg.
As for Tm (melting point), an endothermic curve appears when a sample is added to the DSC and the temperature is raised.
As for Td (decomposition temperature), when a sample is added to DTA (Differential Thermal Analyzer) and heated, the sample is decomposed by heat and the weight starts to decrease. The temperature at which the decrease starts is read and the temperature is defined as Td.
Regarding the energy gap (Eg), an absorption curve of the thin film prepared with a vapor deposition machine is measured with an ultraviolet-visible absorptiometer. A tangent line is drawn at the rising edge of the thin film on the short wavelength side, and the wavelength W (nm) at the obtained intersection is substituted into the following equation to obtain the target value. The value obtained thereby becomes Eg.
Eg = 1240 ÷ W
For example, if the value W (nm) obtained by drawing a tangent is 470 nm, the value of Eg at this time is Eg = 1240 ÷ 470 = 2.63 (eV)
It will be said.
Ip (ionization potential) is measured using an ionization potential measuring apparatus (for example, Riken Keiki AC-1), and the value of the voltage (eV) at which the sample to be measured starts ionization is read.
Ea (electron affinity) is a value obtained by subtracting Eg from Ip.
Intensity au in this specification was measured at 4.2K in a cryostat using a streak camera manufactured by Hamamatsu Photonics.
実施例6〜9および比較例1
(本発明化合物を電子輸送層として使用)
(1)各実施例、比較例の素子構成
比較例1(図64に相当)
○:ITO(陽極)/α−NPD(50nm)(正孔輸送層)/Alq3(70nm)(電子輸送性発光層)/LiF(0.5nm)(電子注入層)/Al(100nm)(陰極);
実施例6(図55に相当)
□:ITO/α−NPD(50nm)/Alq3(40nm)/実施例1の化合物TmiQPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
実施例7(図55に相当)
◇:ITO/α−NPD(50nm)/Alq3(40nm)/実施例2の化合物TmPyPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
実施例8(図55に相当)
▽:ITO/α−NPD(50nm)/Alq3(40nm)/実施例3の化合物Tm4PyPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
実施例9(図55に相当)
△:ITO/α−NPD(50nm)/Alq3(40nm)/実施例4の化合物TmMPyPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
前記○、□、◇、▽、△の印は、図12〜16の各グラフの印である。
(Uses the compound of the present invention as an electron transport layer)
(1) Device configuration comparative example 1 of each example and comparative example (corresponding to FIG. 64 )
○: ITO (anode) / α-NPD (50 nm) (hole transport layer) / Alq 3 (70 nm) (electron transporting light emitting layer) / LiF (0.5 nm) (electron injection layer) / Al (100 nm) ( cathode);
Example 6 (equivalent to FIG. 55 )
□: ITO / α-NPD (50 nm) / Alq 3 (40 nm) / the compound of Example 1 TmiQPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm);
Example 7 (equivalent to FIG. 55 )
◇: ITO / α-NPD (50 nm) / Alq 3 (40 nm) / the compound of Example 2 TmPyPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm);
Example 8 (equivalent to FIG. 55 )
ITO: ITO / α-NPD (50 nm) / Alq 3 (40 nm) / Compound of Example 3 Tm4PyPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm);
Example 9 (equivalent to FIG. 55 )
Δ: ITO / α-NPD (50 nm) / Alq 3 (40 nm) / compound TmMPyPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm) of Example 4;
Wherein ○, □, ◇, ▽, sign of △ is the sign of each graph in Figure 12-16.
前記実施例6〜9および比較例1の各素子の特性を下記表2〜4に示す。
Max.P.E.:最大視感効率(Maximum Power
Efficiency)
Max.C.E.:最大電流効率(Maximum Current
Efficiency)
Max.Q.E.:最大外部量子効率(Maximum External
Quantum Efficiency)
P.E.:視感効率(Power Efficiency)
Q.E.:外部量子効率(External Quantum
Efficiency)
The characteristics of the respective elements of Examples 6 to 9 and Comparative Example 1 are shown in Tables 2 to 4 below.
Max. P. E. : Maximum luminous efficiency (Maximum Power
(Efficiency)
Max. C. E. : Maximum current efficiency (Maximum Current
(Efficiency)
Max. Q. E. : Maximum external quantum efficiency (Maximum External
Quantum Efficiency)
P. E. : Luminous efficiency (Power Efficiency)
Q. E. : External quantum efficiency (External Quantum
(Efficiency)
各素子の電流密度−電圧特性は 図12に、
輝度 −電圧特性は 図13に、
視感効率−電圧特性は 図14に、
電流効率−電圧特性は 図15に、
輝度 −電流密度特性は図16に、
電流効率−電流密度特性は図17に、
ELスペクトルは 図18に、
それぞれ示す。
Current density of each element - voltage characteristics in FIG. 12,
Brightness - voltage characteristics in FIG. 13,
The voltage characteristic 14, - luminous efficiency
The voltage characteristic 15, - current efficiency
Brightness - current density characteristics in FIG. 16,
The current density characteristic 17, - current efficiency
The EL spectra 18,
Each is shown.
実施例10〜12および比較例2
(本発明化合物の青色リン光素子への応用)
(1)各実施例、比較例の素子構成(図56に相当)
比較例2
○:ITO/TPDPES(20nm)/3DTAPBP(20nm)/4CzPBP:Firpic(11wt%)(30nm)/TAZ(30nm)/LiF(0.5nm)/Al(100nm);
実施例10
□:ITO/TPDPES(20nm)/3DTAPBP(20nm)/4CzPBP:Firpic(11wt%)(30nm)/実施例1の化合物TmiQPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
実施例11
◇:ITO/TPDPES(20nm)/3DTAPBP(20nm)/4CzPBP:Firpic(11wt%)(30nm)/実施例2の化合物TmPyPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
実施例12
△:ITO/TPDPES(20nm)/3DTAPBP(20nm)/4CzPBP:Firpic(11wt%)(30nm)/実施例3の化合物Tm4PyPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
(Application of the compounds of the present invention to blue phosphorescent devices)
(1) Element configuration of each example and comparative example (corresponding to FIG. 56 )
Comparative Example 2
O: ITO / TPDPES (20 nm) / 3DTAPBP (20 nm) / 4CzPBP: Firpic (11 wt%) (30 nm) / TAZ (30 nm) / LiF (0.5 nm) / Al (100 nm);
Example 10
□: ITO / TPDPES (20 nm) / 3DTAPBP (20 nm) / 4CzPBP: Firpic (11 wt%) (30 nm) / the compound of Example 1 TmiQPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm);
Example 11
◇: ITO / TPDPES (20 nm) / 3DTAPBP (20 nm) / 4CzPBP: Firpic (11 wt%) (30 nm) / the compound of Example 2 TmPyPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm);
Example 12
Δ: ITO / TPDPES (20 nm) / 3DTAPBP (20 nm) / 4CzPBP: Firpic (11 wt%) (30 nm) / the compound of Example 3 Tm4PyPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm);
各素子の電流密度 −電圧特性は 図19に、
輝度 −電圧特性は 図20に、
輝度 −電流密度特性は図21に、
外部量子効率−輝度特性は 図22に、
視感効率 −輝度特性は 図23に、
電流効率 −電圧特性は 図24に、
視感効率 −電圧特性は 図25に、
電流効率 −電流密度特性は図26に、
それぞれ示す。
The voltage characteristic 19, - the current density of each element
Brightness - voltage characteristics in FIG. 20,
Brightness - current density characteristics in FIG. 21,
External quantum efficiency - brightness characteristics in FIG. 22,
The brightness characteristic 23, - luminous efficiency
The voltage characteristic 24, - current efficiency
The voltage characteristic 25, - luminous efficiency
The current density characteristic 26, - current efficiency
Each is shown.
実施例10〜12および比較例2の各素子の物性を下記表に示す。
Turn on voltage:発光開始電圧
Max.luminance:最大輝度
The physical properties of the elements of Examples 10 to 12 and Comparative Example 2 are shown in the following table.
実施例13、比較例3
本発明化合物を用いた緑色リン光素子においてα−NPDを正孔輸送層に用いた。
(1)素子の構成
比較例3(図64に相当)
○:ITO(陽極)/TPDPES(20nm)(正孔注入層)/α−NPD(30nm)(正孔輸送層)/CBP:IrPPy(7wt%)(30nm)(発光層)/BCP(10nm)(正孔ブロック層)/Alq3(20nm)(電子輸送層)/LiF(0.5nm)(電子注入層)/Al(100nm)(陰極);
実施例13(図56に相当)
□:ITO(陽極)/TPDPES(20nm)(正孔注入層)/α−NPD(30nm)(正孔輸送層)/CBP:IrPPy(7wt%)(30nm)(発光層)/実施例1のTmiQPhTAZ(30nm)(電子輸送層)/LiF(0.5nm)(電子注入層)/Al(100nm)(陰極);
Example 13 and Comparative Example 3
In a green phosphor element using the compound of the present invention, α-NPD was used for the hole transport layer.
(1) Device configuration comparison example 3 (corresponding to FIG. 64 )
○: ITO (anode) / TPDPES (20 nm) (hole injection layer) / α-NPD (30 nm) (hole transport layer) / CBP: IrPPy (7 wt%) (30 nm) (light emitting layer) / BCP (10 nm) (Hole blocking layer) / Alq 3 (20 nm) (electron transport layer) / LiF (0.5 nm) (electron injection layer) / Al (100 nm) (cathode);
Example 13 (equivalent to FIG. 56 )
□: ITO (anode) / TPDPES (20 nm) (hole injection layer) / α-NPD (30 nm) (hole transport layer) / CBP: IrPPy (7 wt%) (30 nm) (light emitting layer) / of Example 1 TmiQPhTAZ (30 nm) (electron transport layer) / LiF (0.5 nm) (electron injection layer) / Al (100 nm) (cathode);
各素子の電流密度 −電圧特性を 図27に、
輝度 −電圧特性を 図28に、
視感効率 −輝度特性を 図29に、
外部量子効率−輝度特性を 図30に、
ELスペクトルを 図31に示す。
FIG. 27 shows the current density-voltage characteristics of each element.
Brightness - voltage characteristics in FIG. 28,
Figure 29 luminance characteristics, - luminous efficiency
Fig. 30 shows the external quantum efficiency vs. luminance characteristics.
The EL spectra shown in Figure 31.
実施例14、15(緑色リン光素子への応用)
本発明の実施例2と3の化合物を用いたEL素子であって、TAPCを正孔輸送層として用いた例である。
(1)素子の構成(図56に相当)
実施例14
○:ITO/TPDPES(20nm)/TAPC(30nm)/CBP:IrPPy(7wt%)(30nm)/実施例2の化合物TmPyPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
実施例15
□:ITO/TPDPES(20nm)/TAPC(30nm)/CBP:IrPPy(7wt%)(30nm)/実施例3の化合物Tm4PyPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
This is an EL device using the compounds of Examples 2 and 3 of the present invention, in which TAPC is used as the hole transport layer.
(1) Element configuration (corresponding to FIG. 56 )
Example 14
○: ITO / TPDPES (20 nm) / TAPC (30 nm) / CBP: IrPPy (7 wt%) (30 nm) / Compound TmPyPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm) of Example 2;
Example 15
□: ITO / TPDPES (20 nm) / TAPC (30 nm) / CBP: IrPPy (7 wt%) (30 nm) / Compound Tm4PyPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm) of Example 3;
各素子の物性を下記表に示す。
各素子の電流密度 −電圧特性を 図32に、
輝度 −電圧特性を 図33に、
輝度 −電流密度特性を図34に、
電流効率 −電流密度特性を図35に、
電流効率 −電圧特性を 図36に、
視感効率 −電圧特性を 図37に、
外部量子効率−輝度特性を 図38に、
視感効率 −輝度特性を 図39に、
ELスペクトルを 図40に、
それぞれ示す。
Figure 32 shows the current density vs. voltage characteristics of each element.
Brightness - voltage characteristics in FIG. 33,
Brightness - current density characteristics in FIG. 34,
Current efficiency - the current density characteristic in FIG. 35,
Figure 36 shows the current efficiency vs. voltage characteristics.
Figure 37 voltage characteristics, - luminous efficiency
Fig. 38 shows the external quantum efficiency vs. luminance characteristics.
Luminous efficiency - luminance characteristics in FIG. 39,
The EL spectrum is shown in FIG. 40,
Each is shown.
実施例16(緑色リン光素子の膜厚効果)
(1)素子の構成(図56に相当)
その1
○:ITO/TPDPES(20nm)/TAPC(30nm)/CBP:IrPPy(7wt%)(30nm)/実施例3の化合物Tm4PyPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
その2
◇:ITO/TPDPES(20nm)/TAPC(30nm)/CBP:IrPPy(7wt%)(10nm)/実施例3の化合物Tm4PyPhTAZ(50nm)/LiF(0.5nm)/Al(100nm);
その3
△:ITO/TPDPES(20nm)/TAPC(50nm)/CBP:IrPPy(7wt%)(10nm)/実施例3の化合物Tm4PyPhTAZ(30nm)/LiF(0.5nm)/Al(100nm);
(1) Element configuration (corresponding to FIG. 56 )
○: ITO / TPDPES (20 nm) / TAPC (30 nm) / CBP: IrPPy (7 wt%) (30 nm) / Compound Tm4PyPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm) of Example 3 ;
◇: ITO / TPDPES (20 nm) / TAPC (30 nm) / CBP: IrPPy (7 wt%) (10 nm) / Compound Tm4PyPhTAZ (50 nm) / LiF (0.5 nm) / Al (100 nm) of Example 3 ;
Δ: ITO / TPDPES (20 nm) / TAPC (50 nm) / CBP: IrPPy (7 wt%) (10 nm) / Compound Tm4PyPhTAZ (30 nm) / LiF (0.5 nm) / Al (100 nm) of Example 3 ;
各素子の物性を下記表に示す。
各素子の電流密度 −電圧特性を 図41に、
輝度 −電圧特性を 図42に、
輝度 −電流密度特性を図43に、
電流効率 −電流密度特性を図44に、
電流効率 −電圧特性を 図45に、
視感効率 −電圧特性を 図46に、
外部量子効率−輝度特性を 図47に、
視感効率 −輝度特性を 図48に、
ELスペクトルを 図49に、
それぞれ示す。
Current density of each element - voltage characteristics in FIG. 41,
Fig. 42 shows the luminance vs. voltage characteristics.
Figure 43 current density characteristics, - luminance
44 shows the current efficiency vs. current density characteristics.
Figure 45 shows the current efficiency vs. voltage characteristics.
Luminous efficiency - voltage characteristics in FIG. 46,
Figure 47 shows the external quantum efficiency vs. luminance characteristics.
Figure 48 luminance characteristics, - luminous efficiency
The EL spectrum is shown in FIG. 49,
Each is shown.
1 基板
2 陽極
3 発光層
4 陰極
5 正孔輸送層
6 電子輸送層
7 正孔注入層
8 電子注入層
9 正孔ブロック層
10 電子輸送性発光層
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