JP4865382B2 - ビームホモジナイザ及びレーザ照射装置 - Google Patents

ビームホモジナイザ及びレーザ照射装置 Download PDF

Info

Publication number
JP4865382B2
JP4865382B2 JP2006094224A JP2006094224A JP4865382B2 JP 4865382 B2 JP4865382 B2 JP 4865382B2 JP 2006094224 A JP2006094224 A JP 2006094224A JP 2006094224 A JP2006094224 A JP 2006094224A JP 4865382 B2 JP4865382 B2 JP 4865382B2
Authority
JP
Japan
Prior art keywords
lens
array
cylindrical lens
optical path
cylindrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006094224A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006309207A5 (enExample
JP2006309207A (ja
Inventor
智昭 森若
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006094224A priority Critical patent/JP4865382B2/ja
Publication of JP2006309207A publication Critical patent/JP2006309207A/ja
Publication of JP2006309207A5 publication Critical patent/JP2006309207A5/ja
Application granted granted Critical
Publication of JP4865382B2 publication Critical patent/JP4865382B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2006094224A 2005-04-01 2006-03-30 ビームホモジナイザ及びレーザ照射装置 Expired - Fee Related JP4865382B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006094224A JP4865382B2 (ja) 2005-04-01 2006-03-30 ビームホモジナイザ及びレーザ照射装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005106392 2005-04-01
JP2005106392 2005-04-01
JP2006094224A JP4865382B2 (ja) 2005-04-01 2006-03-30 ビームホモジナイザ及びレーザ照射装置

Publications (3)

Publication Number Publication Date
JP2006309207A JP2006309207A (ja) 2006-11-09
JP2006309207A5 JP2006309207A5 (enExample) 2009-04-23
JP4865382B2 true JP4865382B2 (ja) 2012-02-01

Family

ID=37476099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006094224A Expired - Fee Related JP4865382B2 (ja) 2005-04-01 2006-03-30 ビームホモジナイザ及びレーザ照射装置

Country Status (1)

Country Link
JP (1) JP4865382B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124149A (ja) * 2006-11-09 2008-05-29 Advanced Lcd Technologies Development Center Co Ltd 光学装置および結晶化装置
JP4818958B2 (ja) * 2007-03-02 2011-11-16 住友重機械工業株式会社 ビーム照射装置、及び、ビーム照射方法
EP2128694B1 (en) 2007-03-19 2014-02-26 Panasonic Corporation Laser illuminating device and image display device
DE102007057868B4 (de) * 2007-11-29 2020-02-20 LIMO GmbH Vorrichtung zur Erzeugung einer linienförmigen Intensitätsverteilung
DE102008027231B4 (de) * 2008-06-06 2016-03-03 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Strahlformung
US8946594B2 (en) 2011-11-04 2015-02-03 Applied Materials, Inc. Optical design for line generation using microlens array
DE102013102553B4 (de) 2013-03-13 2020-12-03 LIMO GmbH Vorrichtung zur Homogenisierung von Laserstrahlung
CN103499882A (zh) * 2013-10-10 2014-01-08 山东神戎电子股份有限公司 利用光锥的矩形光斑整形装置
KR101913654B1 (ko) * 2017-05-30 2018-12-28 학교법인 한동대학교 주밍기구가 포함된 빔 균질기
JP2020177132A (ja) * 2019-04-18 2020-10-29 株式会社ブイ・テクノロジー レンズユニット及びこのレンズユニットを備える光照射装置
EP3992527B1 (en) * 2019-06-28 2025-05-28 Dai Nippon Printing Co., Ltd. Lighting device and lighting method
KR102324610B1 (ko) * 2019-12-26 2021-11-09 세메스 주식회사 기판 가열 유닛, 기판 처리 장치 및 기판 처리 방법
CN113182533B (zh) * 2021-03-19 2023-09-29 中国科学院福建物质结构研究所 一种激光加热3d打印系统及其控制方法
JP7661199B2 (ja) * 2021-10-29 2025-04-14 株式会社オーク製作所 照明光学系及びレーザ加工装置

Also Published As

Publication number Publication date
JP2006309207A (ja) 2006-11-09

Similar Documents

Publication Publication Date Title
US7899282B2 (en) Beam homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
US8623675B2 (en) Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7304005B2 (en) Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
US7551655B2 (en) Laser irradiation apparatus, laser irradiation method and method for manufacturing semiconductor device
US7700462B2 (en) Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
US7125761B2 (en) Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
US7486444B2 (en) Beam homogenizer and laser irradiation apparatus
TWI356206B (en) Beam homogenizer, laser irradiation apparatus, and
US7919726B2 (en) Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP2006309207A (ja) ビームホモジナイザ及びレーザ照射装置
TWI238093B (en) Laser processing apparatus and laser processing method
JP2005191546A (ja) レーザ照射装置、レーザ照射方法及び半導体装置の作製方法
JP2004297058A (ja) ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法
JP2007165624A (ja) 照射装置
JP4860116B2 (ja) 結晶性半導体膜の作製方法
JP4619035B2 (ja) ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法
JP2004134785A (ja) ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法
JP2007043127A (ja) 逐次的横方向結晶化用のマスク及びその製造方法
JP2005311340A (ja) ビームホモジナイザ及びレーザ照射装置
JP2008218601A (ja) ビーム照射装置、及び、ビーム照射方法
JP2007036080A (ja) レーザアニール装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090304

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090304

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110927

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111108

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111110

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141118

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4865382

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141118

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees