JP4860116B2 - 結晶性半導体膜の作製方法 - Google Patents

結晶性半導体膜の作製方法 Download PDF

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Publication number
JP4860116B2
JP4860116B2 JP2004071916A JP2004071916A JP4860116B2 JP 4860116 B2 JP4860116 B2 JP 4860116B2 JP 2004071916 A JP2004071916 A JP 2004071916A JP 2004071916 A JP2004071916 A JP 2004071916A JP 4860116 B2 JP4860116 B2 JP 4860116B2
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laser
semiconductor film
beam spot
laser beam
laser light
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Japanese (ja)
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JP2004304171A5 (enExample
JP2004304171A (ja
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舜平 山崎
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
JP2004071916A 2003-03-17 2004-03-15 結晶性半導体膜の作製方法 Expired - Fee Related JP4860116B2 (ja)

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JP2004071916A JP4860116B2 (ja) 2003-03-17 2004-03-15 結晶性半導体膜の作製方法

Applications Claiming Priority (3)

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JP2003071608 2003-03-17
JP2003071608 2003-03-17
JP2004071916A JP4860116B2 (ja) 2003-03-17 2004-03-15 結晶性半導体膜の作製方法

Related Child Applications (1)

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JP2011213638A Division JP5315393B2 (ja) 2003-03-17 2011-09-29 結晶性半導体膜の作製方法

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JP2004304171A JP2004304171A (ja) 2004-10-28
JP2004304171A5 JP2004304171A5 (enExample) 2006-07-27
JP4860116B2 true JP4860116B2 (ja) 2012-01-25

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7943534B2 (en) 2005-08-03 2011-05-17 Phoeton Corp. Semiconductor device manufacturing method and semiconductor device manufacturing system
JP2008041868A (ja) * 2006-08-04 2008-02-21 Sumitomo Heavy Ind Ltd 不純物活性化方法及びレーザ照射装置
JP5068975B2 (ja) * 2006-09-29 2012-11-07 富士フイルム株式会社 レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP5678333B2 (ja) * 2010-05-27 2015-03-04 株式会社ブイ・テクノロジー レーザアニール方法及び装置
JP6030451B2 (ja) * 2011-06-15 2016-11-24 株式会社日本製鋼所 レーザ処理装置およびレーザ処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04282869A (ja) * 1991-03-11 1992-10-07 G T C:Kk 薄膜半導体装置の製造方法及びこれを実施するための装置
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP3586558B2 (ja) * 1998-04-17 2004-11-10 日本電気株式会社 薄膜の改質方法及びその実施に使用する装置
JPH11340160A (ja) * 1998-05-29 1999-12-10 Sumitomo Heavy Ind Ltd レーザアニーリング装置及び方法
JP2002141301A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用光学系とこれを用いたレーザアニーリング装置
JP4845309B2 (ja) * 2000-12-27 2011-12-28 株式会社半導体エネルギー研究所 レーザアニール方法及び半導体装置の作製方法

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