JP4860116B2 - 結晶性半導体膜の作製方法 - Google Patents

結晶性半導体膜の作製方法 Download PDF

Info

Publication number
JP4860116B2
JP4860116B2 JP2004071916A JP2004071916A JP4860116B2 JP 4860116 B2 JP4860116 B2 JP 4860116B2 JP 2004071916 A JP2004071916 A JP 2004071916A JP 2004071916 A JP2004071916 A JP 2004071916A JP 4860116 B2 JP4860116 B2 JP 4860116B2
Authority
JP
Japan
Prior art keywords
laser
semiconductor film
beam spot
laser beam
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004071916A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004304171A (ja
JP2004304171A5 (enExample
Inventor
舜平 山崎
幸一郎 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004071916A priority Critical patent/JP4860116B2/ja
Publication of JP2004304171A publication Critical patent/JP2004304171A/ja
Publication of JP2004304171A5 publication Critical patent/JP2004304171A5/ja
Application granted granted Critical
Publication of JP4860116B2 publication Critical patent/JP4860116B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004071916A 2003-03-17 2004-03-15 結晶性半導体膜の作製方法 Expired - Fee Related JP4860116B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004071916A JP4860116B2 (ja) 2003-03-17 2004-03-15 結晶性半導体膜の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003071608 2003-03-17
JP2003071608 2003-03-17
JP2004071916A JP4860116B2 (ja) 2003-03-17 2004-03-15 結晶性半導体膜の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011213638A Division JP5315393B2 (ja) 2003-03-17 2011-09-29 結晶性半導体膜の作製方法

Publications (3)

Publication Number Publication Date
JP2004304171A JP2004304171A (ja) 2004-10-28
JP2004304171A5 JP2004304171A5 (enExample) 2006-07-27
JP4860116B2 true JP4860116B2 (ja) 2012-01-25

Family

ID=33421739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004071916A Expired - Fee Related JP4860116B2 (ja) 2003-03-17 2004-03-15 結晶性半導体膜の作製方法

Country Status (1)

Country Link
JP (1) JP4860116B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100968687B1 (ko) 2005-08-03 2010-07-06 페톤 가부시끼가이샤 반도체 장치의 제조 방법 및 반도체 장치의 제조 장치
JP2008041868A (ja) * 2006-08-04 2008-02-21 Sumitomo Heavy Ind Ltd 不純物活性化方法及びレーザ照射装置
JP5068975B2 (ja) * 2006-09-29 2012-11-07 富士フイルム株式会社 レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP5678333B2 (ja) * 2010-05-27 2015-03-04 株式会社ブイ・テクノロジー レーザアニール方法及び装置
CN103155106B (zh) * 2011-06-15 2016-09-07 株式会社日本制钢所 激光处理装置和激光处理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04282869A (ja) * 1991-03-11 1992-10-07 G T C:Kk 薄膜半導体装置の製造方法及びこれを実施するための装置
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP3586558B2 (ja) * 1998-04-17 2004-11-10 日本電気株式会社 薄膜の改質方法及びその実施に使用する装置
JPH11340160A (ja) * 1998-05-29 1999-12-10 Sumitomo Heavy Ind Ltd レーザアニーリング装置及び方法
JP2002141301A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用光学系とこれを用いたレーザアニーリング装置
JP4845309B2 (ja) * 2000-12-27 2011-12-28 株式会社半導体エネルギー研究所 レーザアニール方法及び半導体装置の作製方法

Also Published As

Publication number Publication date
JP2004304171A (ja) 2004-10-28

Similar Documents

Publication Publication Date Title
JP5315393B2 (ja) 結晶性半導体膜の作製方法
JP5159021B2 (ja) 半導体装置の作製方法
US7551655B2 (en) Laser irradiation apparatus, laser irradiation method and method for manufacturing semiconductor device
US8222126B2 (en) Laser irradiation apparatus and method for manufacturing semiconductor device
US7919726B2 (en) Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4429586B2 (ja) 半導体装置の作製方法
US6984573B2 (en) Laser irradiation method and apparatus
TW564465B (en) Method and apparatus for making a poly silicon film, process for manufacturing a semiconductor device
JP2003209065A (ja) 半導体装置の作製方法、半導体装置、半導体装置の生産システム並びに電子機器
JP2005333117A (ja) レーザ照射装置及び半導体装置の作製方法
JP4364611B2 (ja) 結晶性半導体膜の作製方法
JP2004304171A (ja) レーザ照射装置、レーザ照射方法及び半導体装置の作製方法
JP5133548B2 (ja) レーザアニール方法およびそれを用いたレーザアニール装置
US7560365B2 (en) Method of semiconductor thin film crystallization and semiconductor device fabrication
JP4610867B2 (ja) 半導体装置の作製方法
JP2003243304A (ja) 半導体装置の作製方法
JP4503246B2 (ja) 半導体装置の作製方法
JP5132637B2 (ja) 半導体装置の作製方法
JP5068975B2 (ja) レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP2005123475A (ja) 半導体薄膜とその製造方法およびその薄膜を用いた薄膜トランジスタ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060601

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060601

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091222

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100216

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101005

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101102

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110929

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20111006

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111101

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111102

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141111

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141111

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees