JP4845491B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4845491B2
JP4845491B2 JP2005341427A JP2005341427A JP4845491B2 JP 4845491 B2 JP4845491 B2 JP 4845491B2 JP 2005341427 A JP2005341427 A JP 2005341427A JP 2005341427 A JP2005341427 A JP 2005341427A JP 4845491 B2 JP4845491 B2 JP 4845491B2
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Japan
Prior art keywords
layer
insulating layer
film
region
electrode layer
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Expired - Fee Related
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JP2005341427A
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English (en)
Japanese (ja)
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JP2006186332A (ja
JP2006186332A5 (enExample
Inventor
厳 藤井
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005341427A priority Critical patent/JP4845491B2/ja
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Publication of JP2006186332A5 publication Critical patent/JP2006186332A5/ja
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005341427A 2004-11-30 2005-11-28 半導体装置の作製方法 Expired - Fee Related JP4845491B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005341427A JP4845491B2 (ja) 2004-11-30 2005-11-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004347839 2004-11-30
JP2004347839 2004-11-30
JP2005341427A JP4845491B2 (ja) 2004-11-30 2005-11-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006186332A JP2006186332A (ja) 2006-07-13
JP2006186332A5 JP2006186332A5 (enExample) 2008-12-18
JP4845491B2 true JP4845491B2 (ja) 2011-12-28

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JP2005341427A Expired - Fee Related JP4845491B2 (ja) 2004-11-30 2005-11-28 半導体装置の作製方法

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JP (1) JP4845491B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150002341A (ko) * 2013-06-28 2015-01-07 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5372337B2 (ja) * 2007-03-27 2013-12-18 住友化学株式会社 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法
JP5435907B2 (ja) * 2007-08-17 2014-03-05 株式会社半導体エネルギー研究所 表示装置の作製方法
GB2455747B (en) * 2007-12-19 2011-02-09 Cambridge Display Tech Ltd Electronic devices and methods of making the same using solution processing techniques
GB0819449D0 (en) * 2008-10-23 2008-12-03 Cambridge Display Tech Ltd Display drivers
JP5314616B2 (ja) * 2010-02-08 2013-10-16 富士フイルム株式会社 半導体素子用基板の製造方法
JP5866783B2 (ja) * 2011-03-25 2016-02-17 セイコーエプソン株式会社 回路基板の製造方法
KR102531673B1 (ko) * 2016-04-07 2023-05-12 삼성디스플레이 주식회사 디스플레이 장치
TWI845699B (zh) * 2019-06-12 2024-06-21 日商東京威力科創股份有限公司 半導體裝置的平坦化
EP3863059B1 (de) * 2020-02-04 2024-07-31 Siemens Healthineers AG Perowskit-basierte detektoren mit erhöhter adhäsion
JP7449790B2 (ja) * 2020-06-24 2024-03-14 株式会社アルバック 金属配線の形成方法及び金属配線の構造体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3071810B2 (ja) * 1990-09-14 2000-07-31 株式会社東芝 半導体装置の製造方法
JP4778660B2 (ja) * 2001-11-27 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2003273111A (ja) * 2002-03-14 2003-09-26 Seiko Epson Corp 成膜方法及びその方法を用いて製造したデバイス、並びにデバイスの製造方法
JP4543617B2 (ja) * 2002-04-22 2010-09-15 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法、電気光学装置の製造方法、電子機器の製造方法、アクティブマトリクス基板の製造装置、電気光学装置の製造装置、及び電気機器の製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150002341A (ko) * 2013-06-28 2015-01-07 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102042532B1 (ko) * 2013-06-28 2019-11-08 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법

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JP2006186332A (ja) 2006-07-13

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