JP4837871B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4837871B2
JP4837871B2 JP2002346545A JP2002346545A JP4837871B2 JP 4837871 B2 JP4837871 B2 JP 4837871B2 JP 2002346545 A JP2002346545 A JP 2002346545A JP 2002346545 A JP2002346545 A JP 2002346545A JP 4837871 B2 JP4837871 B2 JP 4837871B2
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film
semiconductor film
semiconductor
barrier layer
rare gas
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Japanese (ja)
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JP2003234291A (ja
JP2003234291A5 (https=
Inventor
英人 大沼
雅人 米澤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002346545A priority Critical patent/JP4837871B2/ja
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Publication of JP2003234291A5 publication Critical patent/JP2003234291A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002346545A 2001-11-28 2002-11-28 半導体装置の作製方法 Expired - Fee Related JP4837871B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002346545A JP4837871B2 (ja) 2001-11-28 2002-11-28 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001363127 2001-11-28
JP2001-363127 2001-11-28
JP2001363127 2001-11-28
JP2002346545A JP4837871B2 (ja) 2001-11-28 2002-11-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003234291A JP2003234291A (ja) 2003-08-22
JP2003234291A5 JP2003234291A5 (https=) 2005-12-15
JP4837871B2 true JP4837871B2 (ja) 2011-12-14

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JP2002346545A Expired - Fee Related JP4837871B2 (ja) 2001-11-28 2002-11-28 半導体装置の作製方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4700317B2 (ja) * 2004-09-30 2011-06-15 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5208591B2 (ja) 2007-06-28 2013-06-12 株式会社半導体エネルギー研究所 発光装置、及び照明装置

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JP2003234291A (ja) 2003-08-22

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