JP4836466B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4836466B2
JP4836466B2 JP2005027205A JP2005027205A JP4836466B2 JP 4836466 B2 JP4836466 B2 JP 4836466B2 JP 2005027205 A JP2005027205 A JP 2005027205A JP 2005027205 A JP2005027205 A JP 2005027205A JP 4836466 B2 JP4836466 B2 JP 4836466B2
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Japan
Prior art keywords
circuit
memory
chip
switch
film
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Expired - Fee Related
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JP2005027205A
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Japanese (ja)
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JP2005251183A (ja
JP2005251183A5 (enExample
Inventor
潤 小山
馨太郎 今井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005027205A priority Critical patent/JP4836466B2/ja
Publication of JP2005251183A publication Critical patent/JP2005251183A/ja
Publication of JP2005251183A5 publication Critical patent/JP2005251183A5/ja
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JP2005027205A 2004-02-06 2005-02-03 半導体装置 Expired - Fee Related JP4836466B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005027205A JP4836466B2 (ja) 2004-02-06 2005-02-03 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004030681 2004-02-06
JP2004030681 2004-02-06
JP2005027205A JP4836466B2 (ja) 2004-02-06 2005-02-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2005251183A JP2005251183A (ja) 2005-09-15
JP2005251183A5 JP2005251183A5 (enExample) 2008-01-24
JP4836466B2 true JP4836466B2 (ja) 2011-12-14

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JP2005027205A Expired - Fee Related JP4836466B2 (ja) 2004-02-06 2005-02-03 半導体装置

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JP (1) JP4836466B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201437A (ja) * 2005-12-27 2007-08-09 Semiconductor Energy Lab Co Ltd 半導体装置
US7605410B2 (en) * 2006-02-23 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7759765B2 (en) 2006-07-07 2010-07-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device mounted with fuse memory
CN101523611B (zh) * 2006-10-04 2012-07-04 株式会社半导体能源研究所 半导体器件及其制造方法
US7994607B2 (en) 2007-02-02 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5525694B2 (ja) 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
WO2010038596A1 (en) 2008-10-03 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Modulation circuit and semiconductor device including the same
JP5762723B2 (ja) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
CN103366213B (zh) * 2012-03-31 2016-08-03 华矽半导体股份有限公司 主动式电子标签及其信号调变方法
CN104508705B (zh) * 2012-06-22 2018-05-25 日本电气株式会社 验证方法、验证系统、设备、验证设备和程序
US10666905B2 (en) 2012-06-22 2020-05-26 Nec Corporation Verification method, verification system, verification apparatus, and program therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62172739A (ja) * 1986-01-24 1987-07-29 Nec Corp 半導体集積回路
JPH04307757A (ja) * 1991-04-04 1992-10-29 Nec Corp 半導体装置およびその製造方法
JP3170101B2 (ja) * 1993-04-15 2001-05-28 株式会社東芝 半導体装置及びその製造方法
JP4042182B2 (ja) * 1997-07-03 2008-02-06 セイコーエプソン株式会社 Icカードの製造方法及び薄膜集積回路装置の製造方法
JP2000020665A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体装置
JP2000293996A (ja) * 1999-02-03 2000-10-20 Seiko Instruments Inc メモリ回路
JP3967487B2 (ja) * 1999-02-23 2007-08-29 株式会社東芝 Icカード
JP3696477B2 (ja) * 2000-04-06 2005-09-21 松下電器産業株式会社 アクセスシステム

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