JP4819100B2 - 高速高分子アクチュエーター及びその製造方法 - Google Patents
高速高分子アクチュエーター及びその製造方法 Download PDFInfo
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- JP4819100B2 JP4819100B2 JP2008159336A JP2008159336A JP4819100B2 JP 4819100 B2 JP4819100 B2 JP 4819100B2 JP 2008159336 A JP2008159336 A JP 2008159336A JP 2008159336 A JP2008159336 A JP 2008159336A JP 4819100 B2 JP4819100 B2 JP 4819100B2
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- nafion
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- 229920000642 polymer Polymers 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229920000557 Nafion® Polymers 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 30
- 229920001940 conductive polymer Polymers 0.000 claims description 28
- 238000009832 plasma treatment Methods 0.000 claims description 27
- 239000012528 membrane Substances 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 9
- 239000002905 metal composite material Substances 0.000 claims description 6
- 239000002322 conducting polymer Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 27
- 238000006073 displacement reaction Methods 0.000 description 24
- 239000010408 film Substances 0.000 description 24
- 238000004381 surface treatment Methods 0.000 description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 238000001179 sorption measurement Methods 0.000 description 9
- 230000009467 reduction Effects 0.000 description 8
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000004696 coordination complex Chemical class 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 244000137852 Petrea volubilis Species 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229920001746 electroactive polymer Polymers 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000002345 surface coating layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Micromachines (AREA)
Description
Proc. of IEEE-sensors (2004), Vol. 2, pp 619-622, Lakshmi Supriya and Richard O. Claus, "Fabrication of Electrodes for Polymer Actuators and Sensors via Self-Assembly" Proc. of SPIE (2006), Vol. 6413, pp 641302/1-10, Boyko L. Stoimenov et al., "Anisotropic surface roughness enhances bending response of ionic polymer-metal composite (IPMC) artificial muscles"
図2を参照すれば、本発明による高速高分子アクチュエーターの製造方法は、イオン伝導性高分子膜の表面が均一になるように表面処理する表面処理段階(S210)と、イオン伝導性高分子膜の両面に金属電極を吸着する段階(S230)と、イオン伝導性高分子膜の両面に高分子金属複合体を還元する段階(S250)と、コーティング層を形成する段階(S270)とを含む。
表面処理段階(S210)は、プラズマ処理工程を利用してイオン伝導性高分子膜の表面が均一になるように表面処理することによって、イオン伝導性高分子膜の膨脹や収縮が容易になされるようにする段階である。これについて図3a乃至図3dを参照して具体的に説明する。
金属電極吸着段階(S230)は、大きく、イオン交換(吸着)、1次メッキ(還元)、2次還元(表面電極化)段階に分けられる。以下、各段階についてさらに詳しく説明する。
NaBH4+4[Pt(NH3)4]2++8OH−→4Pt0(s)+16NH3(g)+NaBO2+6H2O(l)
ここで、還元剤としてNaBH4を使用した。
高分子金属複合体還元段階(S250)は、大きく、イオン置換、水除去、溶媒置換段階に分けられる。以下、各段階についてさらに詳しく説明する。
ここで、前記置換されたLi+イオンが、高分子アクチュエーターの動作時には、ナフィオンの内部で動いて膜の変形をもたらすようになる。
コーティング層形成段階(S270)では、前記メッキされた金属電極の表面上にコーティング層を形成する。
Claims (5)
- イオン伝導性高分子膜の表面をストライプ形状のシャドーマスクを利用して非等方プラズマ処理する段階と、
前記非等方プラズマ処理された前記イオン伝導性高分子膜の表面をマスクなしに等方プラズマ処理する段階と、
表面処理された前記イオン伝導性高分子膜の両面に金属電極を吸着する段階と、
前記イオン伝導性高分子膜の両面に高分子金属複合体を還元する段階と、
コーティング層を形成する段階と、
を含むことを特徴とする高速高分子アクチュエーターの製造方法。 - 前記イオン伝導性高分子膜は、ナフィオン(NafionTM)であることを特徴とする請求項1に記載の高速高分子アクチュエーターの製造方法。
- 前記第1段階を経た前記イオン伝導性高分子膜は、トレンチ(trench)形態でエッチングされた形態の表面を有することを特徴とする請求項1に記載の高速高分子アクチュエーターの製造方法。
- 前記第2段階を経た前記イオン伝導性高分子膜は、小さい柱が反復的にパターニングされた形態の均一な表面を有することを特徴とする請求項1に記載の高速高分子アクチュエーターの製造方法。
- 請求項1乃至4のいずれかに記載の方法によって製造された高速高分子アクチュエーター。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0113105 | 2007-11-07 | ||
KR1020070113105A KR100924772B1 (ko) | 2007-11-07 | 2007-11-07 | 고속 고분자 구동기의 제조방법 |
Publications (2)
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JP2009118726A JP2009118726A (ja) | 2009-05-28 |
JP4819100B2 true JP4819100B2 (ja) | 2011-11-16 |
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JP2008159336A Expired - Fee Related JP4819100B2 (ja) | 2007-11-07 | 2008-06-18 | 高速高分子アクチュエーター及びその製造方法 |
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JP (1) | JP4819100B2 (ja) |
KR (1) | KR100924772B1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100971228B1 (ko) * | 2009-08-14 | 2010-07-20 | 전남대학교산학협력단 | 이온성 고분자 금속복합체를 이용한 션트 감쇠기 |
DE102011075127B4 (de) | 2010-05-04 | 2014-10-30 | Electronics And Telecommunications Research Institute | Mikroventilstruktur mit einem Polymeraktor und Lab-on-a-chip Modul |
WO2012002588A1 (ko) * | 2010-06-29 | 2012-01-05 | 서울대학교 산학협력단 | 전기활성고분자 구동기와 이의 제조 방법 |
JP6618035B2 (ja) * | 2015-03-09 | 2019-12-11 | 株式会社リコー | 素子、及び発電装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2000150202A (ja) * | 1998-11-04 | 2000-05-30 | Nichias Corp | Ptc素子及びその作製方法 |
JP2005033991A (ja) * | 2003-06-17 | 2005-02-03 | Eamex Co | 高分子アクチュエータ素子 |
KR100616626B1 (ko) * | 2004-10-22 | 2006-08-28 | 삼성전기주식회사 | 고체 전기활성 구동기 및 그 제조방법 |
KR100786653B1 (ko) * | 2005-12-26 | 2007-12-21 | 한국생산기술연구원 | 전기반응형 다층 고분자박막 제조장치 및 제조방법 |
CN101370858A (zh) * | 2006-01-23 | 2009-02-18 | 日立化成研究中心公司 | 离子聚合物装置及其制备的方法 |
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- 2007-11-07 KR KR1020070113105A patent/KR100924772B1/ko not_active IP Right Cessation
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JP2009118726A (ja) | 2009-05-28 |
KR20090047096A (ko) | 2009-05-12 |
KR100924772B1 (ko) | 2009-11-05 |
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