JP4814408B2 - Film capacitor manufacturing method and apparatus - Google Patents

Film capacitor manufacturing method and apparatus Download PDF

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Publication number
JP4814408B2
JP4814408B2 JP29842798A JP29842798A JP4814408B2 JP 4814408 B2 JP4814408 B2 JP 4814408B2 JP 29842798 A JP29842798 A JP 29842798A JP 29842798 A JP29842798 A JP 29842798A JP 4814408 B2 JP4814408 B2 JP 4814408B2
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Japan
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rotating body
organic material
electrode
opening
thin film
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JP2000124061A (en
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雄一郎 山田
益男 丹野
真一 陶澤
強 加瀬部
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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【０００１】
【発明の属する技術分野】
本発明はフィルムコンデンサの製造方法とその製造装置に関するものである。
【０００２】
【従来の技術】
近年、情報通信分野の技術進歩に伴い、制御機器を構成する電子部品に対しての小型化、軽量化、高性能化が強く要望されている。フィルムコンデンサについても例外ではなく、誘電体フィルムのよりいっそうの薄膜化への取り組みが行われている。例えば、誘電体としてフィルムを前もって製造する方法に対し、１μm 以下の厚みの誘電体を真空蒸着法によって薄膜形成しながら同時に金属薄膜電極形成を行ってコンデンサを形成する方法が今後必要となる。
【０００３】
以下、図面を参照しながら、従来の積層型フィルムコンデンサの製造方法の一例について説明する。従来、巻回積層型のフィルムコンデンサの母材を切断したときに、切断端面が揃っているフィルムコンデンサに対して、電極と端面電極との電気的な接触と端面電極との十分な付着強度を得るための方法が特公平０８−０１７１４３号公報に開示されている。図９及び図１０に、その従来の巻回型フィルムコンデンサの製造方法の一例を示す。図において、１は厚み約２μｍのポリフエニレンサルフアイド（ＰＰＳ）フィルムを用いた片面金属化フィルム、１ａは電極となるアルミニウム蒸着膜、３はマージン部、４はマージン幅、５は親コンデンサ、６は端面電極である。まず、図１０に示すように、複数のコンデンサ要素が形成されるように複数のマージン部３が設けられている広幅の片面金属化フィルム１を、互いに隣接する１組のマージン部３の各間が２枚のフィルムで１／２ずつずらせて重ねるように巻向する。得られた巻回物を１組のマージン幅４の中央部分で切断して、図１０（Ａ）に示す親コンデンサ５を形成する。次に親コンデンサ５の電極引出しをすべき端面を酸素ガスプラズマまたはオゾンガスに接触させて、図１０（Ｂ）に示すようにフィルム１の電極引出し端面側部分をマージン幅４より小さい幅で化学的に電極１ａに対して選択除去して、片面金属化フィルム１の電極１ａを前記端面より露出させるとともに、電極引出し端面部の各誘電体が凸凹をなすよう処理する。その後、前記端面に黄銅を主とする金属を溶射し、図１０（Ｃ）に示すように、端面電極６を形成した後、マージンの形成方向と直角な方向へ親コンデンサ５を切断することにより、単位コンデンサ素子を得る。以上の方法により、巻き回時に微少な隙間がある金属化フィルムの非金属側の方が、それが無い金属化部側の部分よりも優先的に除去されるため、各フィルムの端面がテーパ状に加工される傾向にあり、しかも０．２mmを超えない短い一定の範囲の微小凸凹量が規則性を持たずに端面全体に形成される。この結果、電極１ａと端面電極６との良好な電気的接触と、端面電極６の十分な付着強度を得ることができ、しかもフィルムコンデンサを小型化することができる。
【０００４】
【発明が解決しようとする課題】
しかしながら、図９や図１０に示した従来の方式では、誘電体フィルムの厚みが１．０μｍ以下の極薄膜化になると、電極引出し端面部において誘電体フィルムの凸凹量が十分に得られず、しかも真空蒸着による誘電体薄膜形成と金属薄膜形成による積層方法においては、従来の金属化フィルムの非金属側と金属化側界面に於ける微小隙間の差が無いため、酸素プラズマに接触させたときにフィルム端面のテーパ状加工による凸凹も有効に発生しない。
【０００５】
この結果、電極端面部における良好な電気的接合と、端面電極に対する付着強度が得にくいという問題が生じる。
本発明は、上記従来の問題点に鑑み、超薄膜の有機薄膜誘電体と金属薄膜電極とを多重に交互に重ね合わせた積層型もしくは巻回型のフィルムコンデンサの母材を切断することにより形成される端面において、電極と端面電極との良好な電気的接触と、端面電極の十分な付着強度を得ることのできる積層型フィルムコンデンサと 、その電極引出し端面部において誘電体フィルムの凸凹量が十分に得られる製造方法と、その誘電体薄膜と金属電極薄膜を積層する製造装置を提供しようとするものである。
【０００６】
【課題を解決するための手段】
本発明のフィルムコンデンサの製造技術においては、複数の電極と、前記電極間に配置されている、少なくとも１層以上の有機材料からなる誘電体と、前記電極引き出し端面にそれぞれ付与され、前記電極と接続される端面電極とを備え、前記誘電体の端面が、２層以上の複数層を単位として、化学的エッチングの程度を変化せしめて、単位毎に交互に凸凹面をなすように、前記電極の位置から浅くまたは深く後退してなる構成体としたものである。２層以上の複数層を単位とすることにより、十分な接触と付着強度の向上をもたらすことが可能となる。
【０００７】
そして、本第発明により、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、電極と端面電極との良好な電気的接触と、端面電極の十分な付着強度を有する高品質な積層型フィルムコンデンサが得られる特徴がある。
【０００８】
請求項１の発明のフィルムコンデンサの製造方法においては、厚みが０．８μｍ以下の広幅の有機材料からなる第１の誘電体薄膜を真空蒸着により一層形成した表面に広幅の金属電極を真空蒸着により一層形成した第１の組合せ層を２層以上連続して形成する工程と、前記第１の誘電体薄膜に対し化学構造式が同じで粘度が異なり（分子量が異なる）、かつ厚みが０．８μｍ以下の広幅の有機材料からなる第２の誘電体薄膜を真空蒸着により一層形成した表面に広幅の金属電極を真空蒸着により一層形成した第２の組合せ層を２層以上連続して形成する工程と、２層以上の前記第１の組合せ層と２層以上の前記第２の組合せ層を真空蒸着により交互に積層して、複数のコンデンサ要素を有する積層体を形成する工程と、前記積層体を電極引き出し端面部分で切断する工程と、前記電極引き出し端面を酸素プラズマ又はオゾンを含むガスに接触させて前記第１の誘電体薄膜の第１の電極引き出し端面部分および前記第２の誘電体薄膜の第２の電極引き出し端面部分にエッチングにより凸凹面を形成する工程と、前記凸凹面が形成された前記第１の電極引き出し端面部分および前記第２の電極引き出し端面部分に端面電極を形成する工程と、を有するものである。
【０００９】
この請求項１の発明により、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、電極引出し端面部において誘電体フィルムの凸凹量が十分に確保できるフィルムコンデンサの製造方法が得られる。請求項２及び３の発明のフィルムコンデンサの製造装置においては、真空容器内に収納された回転体と、前記回転体の回転軸と平行をなす回転体表面に対向して配置する金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置するコンデンサマージン形成要素と、前記回転体の回転軸と平行をなす回転体表面に対し開閉板を挿んで対向して配置した異なる有機材料を有する有機材料蒸発要素を２個以上有するフィルムコンデンサ製造装置において、第１の有機材料蒸発要素に対する第１の開閉板を開いている間は、第２の有機材料蒸発要素に対する第２の閉板を閉め、且つ第２の開閉板を開いている間は第１の開閉板を閉め、前記回転体表面の全面が前記同種の有機材料蒸発要素の対面を２回通過する間は、前記開閉板の一方のみの連続的もしくは断続的な開動作とすることを特徴とするものである。
【００１０】
この請求項２及び３の発明により、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、電極引出し端面部において酸素プラズマに接触させて電極を露出するときに、誘電体フィルムの凸凹量が十分に確保できるフィルムコンデンサの積層製造装置が得られる。請求項４の発明のフィルムコンデンサの製造装置においては、真空容器内に収納された回転体と、前記回転体の回転軸と平行をなす回転体表面に対し開閉板を挿んで対向して配置した、異なる有機材料を有する２個以上の有機材料蒸発要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置した前記有機材料蒸発要素と同個数の金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置した前記有機材料蒸発要素と同個数のコンデンサマージン形成要素を有するフィルムコンデンサ製造装置において、前記回転体の回転方向に対し前記有機材料蒸発要素と前記コンデンサマージン形成要素と前記金属薄膜形成要素を１個ずつ順番に１つの群として配置し、前記回転体が前記群により形成される角度範囲を２回以上往復した後、次の群に往復運動範囲を回転移動することを繰り返し、前記有機材料蒸発要素に対する各々の前記開閉板は同時に開くことを特徴とするものである。
【００１１】
請求項４の発明により、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、電極引出し端面部において酸素プラズマに接触させて電極を露出するときに、誘電体フィルムの凸凹量が十分に確保でき、且つ生産性に優れたフィルムコンデンサの積層製造装置が得られる。請求項５の発明のフィルムコンデンサの製造装置においては、真空容器内に収納された回転体と、前記回転体の回転軸と平行をなす回転体表面に対向して配置する金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置するコンデンサマージン形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置した有機材料蒸発要素とを有するフィルムコンデンサ製造装置において、前記有機材料蒸発要素は、有機材料を薄く伸展する蒸発板と、前記蒸発板表面に前記有機材料を供給する手段と、前記蒸発板を輻射加熱する有機材料加熱手段と、熱輻射量制御電源と、前記有機材料の蒸気を囲む容器と、前記容器を排気する手段と、前記容器内圧力を制御する排気調整弁とを有し、前記回転体が２回転以上回転する毎に、前記有機材料加熱手段の前記蒸発板への熱輻射量と前記容器内圧力を変化させることを繰り返し、前記有機材料の分子量を２回転以上毎に交互に変化させることを特徴とするものである。
【００１２】
この請求項５の発明により、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、電極引出し端面部において酸素プラズマに接触させて電極を露出するときに、誘電体フィルムの凸凹量が十分に確保できるフィルムコンデンサを単一種の有機材料蒸発源から得ることのできる積層製造装置が得られる。
【００１３】
請求項６の発明のフィルムコンデンサの製造装置においては、真空容器内に収納された回転体と、前記回転体の回転位置を割り出す回転位置計と、前記回転体の回転軸と平行をなす回転体表面に対向して配置する金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置するコンデンサマージン形成要素と、前記回転体の回転軸と平行をなす回転体表面に対し、前記回転位置計と連動した開閉板を挿んで対向して配置した異なる有機材料を有する有機材料蒸発要素を２個以上有するフィルムコンデンサ製造装置において、前記回転体を連続して回転させながら、有機材料蒸発要素に対する第１の開閉板を開き第２の開閉板を閉めた状態と、第１の開閉板を開き第２の開閉板を開いた状態と、第１の開閉板を閉め第２の開閉板を開く状態とを、前記回転位置計と連動して交互に繰り返し、前記回転体表面の全面が前記同種の有機材料蒸発要素の対面を２回通過する間は、前記開閉板の一方のみが連続的に開くことを特徴とするものである。
【００１４】
この請求項６の発明により、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、電極引出し端面部において酸素プラズマに接触させて電極を露出するときに誘電体フィルムの凸凹量が十分に確保できるフィルムコンデンサを、回転体を連続的に回転させながら積層できる生産性の高い積層製造装置が得られる。
【００１５】
本発明のフィルムコンデンサの製造方法においては、複数のコンデンサ要素を有する広幅の片面金属化フィルムを巻き取りによって積層体とする工程と、前記工程で得られた積層物を電極引き出し端面部分で切断する工程と、前記電極引き出し端面を酸素プラズマもしくオゾンを含むガスに接触させて、前記誘電体薄膜の前記電極引き出し端面部分を前記電極から後退させる工程と、前記電極引き出し端面部分に端面電極を形成する工程とを含むフィルムコンデンサ製造方法において、２層以上連続した第１の片面金属化フィルムの巻き取りと、前記第１の片面金属化フィルムとエッチング速度が異なり且つ２層以上連続した第２の片面金属化フィルムの巻き取りを同時に行って積層体を形成することからなるものである。
【００１６】
これらの発明により、誘電体の厚みが０．８μｍ以下の片面金属化フィルムを積層して形成するフィルムコンデンサに対し、電極引出し端面部において誘電体フィルムの凸凹量が十分に確保できるフィルムコンデンサの製造方法が得られる。
【００１７】
【発明の実施の形態】
以下、本発明の実施の形態について図１から図８を用いて説明する。
（実施の形態１）
図１に、本発明の第１実施形態におけるフィルムコンデンサの構成を示す。図１において、１ａは電極となるアルミニウム蒸着膜、３はコンデンサ要素を形成するためのマージン部、４はマージン幅、５は親コンデンサ、６は端面電極、８ａ及び８ｂは膜厚約０．４μｍの有機材料からなるそれぞれ第１及び第２の誘電体である。誘電体８ａと８ｂの異なる点は、電極引き出しをする端面において、誘電体８ａの端面が誘電体８ｂの端面に対しマージン部３に近くまで入り込んでいるところにある。誘電体８ａと８ｂはそれぞれ３層ずつ連続して形成される。この結果、一電極端面において、３層毎に交互に誘電体層の凸凹面が寸法９を持って形成され、電極１ａの引き出し形状が３層毎に変化する。
【００１８】
このため電極端面に黄銅を溶射して、端面電極６を形成するときに、端面電極６と電極１ａとの間には良好な電気的接合が得られ、端面電極６は電極１ａと誘電体８ａ、８ｂに対して高い付着強度を有する。
（実施の形態２）
図１と図２とを用いて、本発明第２実施形態のフィルムコンデンサの製造方法を説明する。
【００１９】
図１において、８ａはジメチロールトリシクロデカンジアクリレート
【００２０】
【化１】

Figure 0004814408
【００２１】
を成分とする第１の誘電体薄膜、また
８ｂはフエノキシエチルアクリレート
【００２２】
【化２】
Figure 0004814408
【００２３】
を成分とする第２の誘電体薄膜である。
図２は酸素プラズマ処理装置を示す。図２において、１０は減圧保持可能な真空容器、１１は石英窓、１２は高周波を印加する電極、１３は高周波電源、１４はアルミニウムからなるマスクである。
【００２４】
本実施例において、まず広幅の第１の誘電体薄膜８ａを真空蒸着により一層形成した表面に広幅のアルミニウム電極１ａをマージン部３を形成しながら真空蒸着により１層形成した組み合わせ層を３回連続して繰り返し、次に、広幅の第２の誘電体薄膜８ｂを真空蒸着により一層形成した表面に広幅のアルミニウム電極１ａをマージン部３を形成しながら真空蒸着により１層形成した組み合わせ層を３回連続して繰り返す。マージン部は誘電体薄膜８ａ、８ｂの種別に拘わらず１層毎に互いに隣接する１組のマージン幅４の各間が上下の誘電体薄膜で１／２ずつずれるように積層する。以上の積層工程を約１０００回繰り返し、３０００層からなる誘電体薄膜と電極薄膜の組み合わせ層を形成する。この広幅の積層体を１組のマージン幅４の中央部分で切断して図１に示す親コンデンサ素子を形成する。
【００２５】
次に図２に示す酸素プラズマ処理装置により、親コンデンサ素子５の電極引き出しをすべき端面を酸素プラズマに接触させて、誘電体薄膜８ａ、８ｂの電極引き出し端面倒部分をマージン幅４より小さい幅で化学的に選択除去して、電極１ａを前記端面より露出させる。酸素プラズマの条件は酸素ガス流量６０Ｓcm3／分（Ｓcm3／分とは標準状態における毎分の流量）、圧力１．０Torr、高周波電力４００W である。
【００２６】
酸素プラズマによる有機材料の除去は、有機材料を構成するＣ−Ｃ、Ｃ−Ｈ、Ｃ−Ｓなどの結合を、プラズマによって発生した酸素ラジカルが分解し、有機物がＣＯ2、Ｈ2Ｏ、ＳＯ2などのガスになり、真空排気されることにより行われる。この条件下で、第１の誘電体薄膜８ａであるジメチロールトリシクロデカンジアクリレートのポリマー化した固体のエッチング速度は約１０００Å／分、第２の誘電体薄膜８ｂであるフエノキシエチルアクリレートは約３００Å／分であり、この２つの化学構造が異なる誘電体薄膜８ａ、８ｂはエッチング速度が異なる。
【００２７】
この結果、電極端面において、３層毎に交互に誘電体層の凸凹面が寸法９を持って形成され電極１ａの引き出し形状が３層毎に変化する。このため電極端面に黄銅を溶射して、端面電極６を形成するときに、端面電極６と電極１ａの間には良好な電気的接合が得られ端面電極６は電極１ａと誘電捧８ａ、８ｂに対して強い付着強度を有するフィルムコンデンサを製造できる。
【００２８】
なお、誘電体薄膜の真空蒸着源の加熱温度は樹脂モノマの加熱分解温度以下とする。例えばジメチロールトリシクロデカンジアクリレートにおいては１７０℃以下である。また誘電体薄膜を形成する表面において、熱的不均一を原因とする粒状付着や紫外線の不均一照射による部分的固化を避けるために薄膜形成表面は冷却水等を用いて一定に温度を保ち、また光の進入を防止する。
【００２９】
（実施の形態３）
図１と図２を用いて、本発明第３実施形態のフィルムコンデンサの製造方法を説明する。
図１において、８ａは粘度約１３５ｍＰａ・ｓｅｃ（２５℃）のジメチロールトリシクロデカンジアクリレートを成分とする第１の誘電体薄膜、８ｂは粘度約１７０ｍＰａ・ｓｅｃ（２５℃）のジメチロールトリシクロデカンジアクリレートを成分とする第２の誘電体薄膜である。
【００３０】
上記誘電体薄膜は化学式が同一の構造異性体であって、メチロール基の結合位置の相違により、粘度が異なり、またこの結果ポリマー化したときの硬化度も異なるものと推定される。
【００３１】
本実施例において、まず広幅の第１の誘電体薄膜８ａを真空蒸着により一層形成した表面に広幅のアルミニウム電極１ａをマージン部３を形成しながら真空蒸着により１層形成した組み合わせ層を３回連続して繰り返し、次に、広幅の第２の誘電体薄膜８ｂを真空蒸着により一層形成した表面に広幅のアルミニウム電極１ａをマージン部３を形成しながら真空蒸着により１層形成した組み合わせ層を３回連続して繰り返す。マージン部は誘電体薄膜８ａ、８ｂの種類に拘わらず１層毎に互いに隣接する１組のマージン幅４の各間が上下の誘電体薄膜で１／２ずつずれるように積層する。
【００３２】
以上の積層工程を約１０００回繰り返し、３０００層からなる誘電体薄膜と電極薄膜の組み合わせ層を形成する。この広幅の積層体を１組のマージン幅４の中央部分で切断して図１に示す親コンデンサ素子を形成する。次に図２に示す酸素プラズマ処理装置により、親コンデンサ素子５の電極引き出しをすべき端面を酸素プラズマに接触させて、誘電体薄膜８ａ、８ｂの電極引き出し端面側部分をマージン幅４より小さい幅で化学的に選択除去して、電極１ａを前記端面より露出させる。この際の酸素プラズマの条件は酸素ガス流量６０s cc／分、圧力１．０Torr、高周波電力４００W である。
【００３３】
この条件下で、第１の誘電体薄膜８ａであるジメチロールトリシクロデカンジアクリレートのポリマー化した固体のエッチング速度は約７００Å／分、第２の誘電体薄膜８ｂであるジメチロールトリシクロデカンジアクリレートは約１０００Å／分であり、この２つの化学構造が同じ誘電体薄膜８ａ、８ｂは粘度が異なり、エッチング速度が異なる。この結果、電極端面において、３層毎に交互に誘電体層の凸凹面が寸法９を持って形成され、電極１ａの引き出し形状が３層毎に変化する。このため電極端面に黄銅を溶射して、端面電極６を形成するときに、端面電極６と電極１ａの間には良好な電気的接合が得られ、端面電極６は電極１ａと誘電体８ａ、８ｂに対して強い付着強度を有するフィルムコンデンサを製造できる。
【００３４】
（実施の形態４）
図３を用いて、本発明第４実施形態のフィルムコンデンサの製造装置を説明する。
図３において、３１は減圧保持可能な積層用真空容器、３２は紙面垂直方向に被成膜平面を有する６角形の回転体、３３は広幅のコンデンサ素子板、３４ａ及び３４ｂは減圧保持可能な第１及び第２の有機材料蒸着容器、３５ａ及び３５ｂは前記第１及び第２の有機材料蒸着容器に収納されたそれぞれ第１及び第２の有機材料蒸着ルツボ、３７ａ及び３７ｂは前記第１及び第２の有機材料蒸着容器と積層用真空容器３１を遮断するそれぞれ第１及び第２の開閉板、３６ａはジメチロールトリシクロデカンジアクリレートを成分とする第１の有機材料液、３６ｂはフエノキシエチルアクリレートを成分とする第２の有機材料液である。第１の有機材料液３６ａは図示されない真空排気系に接続された第１の有機材料蒸着容器３４ａに収納された第１の有機材料蒸着ルツボ３５ａの中で加熱され、蒸気化する。第２の有機材料液３６ｂは図示されない真空排気系に接続された第２の有機材料蒸着容器３４ｂに収納された第２の有機材料蒸着ルツボ３５ｂの中で加熱され、蒸気化する。３８はスパッタ用アルミニウムターゲット、３９はスパッタ用直流電源、４０はオイルマージン吹き出し部、４１はマージン形成用オイルである。
【００３５】
本実施例において、回転体３２は一方向への回転と停止を繰り返し、有機材料蒸発容器３４ａまたは３４ｂ、次にオイルマージン吹き出し部４０、次にスパッタ用ターゲット３８と、順番に各被成膜面を対向静止させる。対向静止した状態で第１もしくは第２の開閉板を開くことによって第１もしくは第２の有機材料蒸気が回転体３２の被成膜面に接触し冷却されて、第１もしくは第２のの有機材料誘電体薄膜が形成できる。またこの時同時にスパッタ用電源３９をオンにして別の被成膜面にアルミニウムからなる電極薄膜が形成できる。さらに同時にオイルマージン吹き出し部４０と積層真空容器３１を遮断する遮断板４３を開いて別の成膜面にオイルによるマージン部が形成できる。以上の膜形成動作を、回転体３２を６００ずつ回転停止を繰り返しながら行うことにより多層積層ができる。以上の動作を可能とする本装置において、特に、第１の開閉板を開いて第１の有機材料を蒸著している間は第２の開閉板は閉めて第２の有機材料の蒸着を停止する。また第２の開閉板を開いて第２の有機材料を蒸著している間は第１の開閉板は閉めて第１の有機材料の蒸着を停止する。この動作を回転体３２の回転回数に対し３回毎に交互に行って、同種の有機材料薄膜と金属電極薄膜の組み合わせ層を３層連続して形成することを繰り返すことができる。この結果、３層毎にエッチング速度の異なる広幅の積層コンデンサ素子板３３を形成させることができる。
【００３６】
（実施の形態５）
図４を用いて、本発明第５実施形態のフィルムコンデンサの製造装置を説明する。
図４において、３１は減圧保持可能な積層用真空容器、３２は紙面垂直方向に被成膜平面を有する６角形の回転体、３３は広幅のコンデンサ素子板、３４ａ及び３４ｂは減圧保持可能な第１及び第２の有機材料蒸着容器であり積層真空容器３１に接続されている。３５ａまたは３５ｂは前記第１及び第２の有機材料蒸着容器に収納された第１または第２の有機材料蒸着ルツボ、３７ａ及び３７ｂは前記第１及び第２の有機材料蒸着容器と積層用真空容器３１を遮断する第１及び第２の開閉板、３６ａはジメチロールトリシクロデカンジアクリレートを成分とする第１の有機材料液、３６ｂはフエノキシエチルアクリレートを成分とする第２の有機材料液である。第１の有機材料液３６ａは図示されない真空排気系に接続された第１の有機材料蒸着容器３４ａに収納された第１の有機材料蒸着ルツボ３５ａの中で加熱され蒸気化する。第２の有機材料液３６ｂは図示されない真空排気系に接続された第２の有機材料蒸着容器３４ｂに収納された第２の有機材料蒸着ルツボ３５ｂの中で加熱され、蒸気化する。３８ａ及び３８ｂは積層真空容器３３にゲートバルブ４２ａまたは４２ｂを介して接続された真空容器内に保持される第１及び第２のスバッタ用アルミニウムターゲット、３９ａおよび３９ｂは第１および第２のスバッタ用直流電源、４０ａ、４０ｂは積層真空容器３３にゲートバルブ４３ａ、４３ｂを介して接続された真空容器内に保持される第１、第２のオイルマージン吹き出し部、４１はマージン形成用オイルである。
【００３７】
本実施例において、積層真空容器３１の周囲に対し、回転体３２の周方向に順番に第１の有機材料蒸着容器３４ａ、第１のスパッタ用ターゲット３８ａ、第１のオイルマージン吹き出し部４０ａ、第２の有機材料蒸着容器３４ｂ、第２のスパッタ用ターゲット３８ｂ、第２のオイルマージン吹き出し部４０ｂを紙面向かって右回りに配置する。各６個のユニットの配置角度の割り出し角度は６０度とする。第１の回転体３２は紙面向かって左回りに６０度づつのの回転と停止を繰り返し、有機材料蒸発容器３４ａ、もしくは３４ｂ、次にオイルマージン吹き出し部４０ａ、もしくは４０ｂ、次にスパッタ用ターゲット３８ａ、もしくは３８ｂと、順番に各被成膜面を対向静止させる。対向静止した状態で第１及び第２の開閉板を開くことによって第１及び第２の有機材料蒸気が回転体３２の対称を成す２つの被成膜面に接触し冷却されて、第１及び第２の有機材料誘電体薄膜が対称を成す２つの被成膜面に形成できる。またこの時同時にスパッタ用電源３９ａ及び３９ｂをオンにして別の対称を成す２つの被成膜面にアルミニウムからなる電極薄膜が形成できる。
【００３８】
さらに同時にオイルマージン吹き出し部４０ａ、及び４０ｂと積層真空容器３１を遮断する遮断板４３ａ、及び４３ｂを開いて別の対称を成す２つの成膜面にオイルによるマージン部が形成できる。
以上の膜形成動作を行いながら、回転体３２を６０度ずつ３回の１方向への回転停止成膜を行う。
【００３９】
次に回転体３２を紙面向かって右回りに１８０度もどす。以上の動作を３回繰り返すことにより、図４に示す範囲Ａのコンデンサ素子板３３（Ａ−１、Ａ−２、Ａ−３）には、第１の有機材料薄膜とアルミニウム電極薄膜を組み合わせ層とする層が３層連続で形成できる。また、範囲Ｂのコンデンサ素子板３３（Ｂ−１、Ｂ−２、Ｂ−３）には、第２の有機材料薄膜とアルミニウム電極薄膜を組み合わせ層とする層が３層連続で形成できる。以上の動作の後、回転体３２を紙面向かって左回りに１８０度回転し、被成膜面の対象に関するＡ範囲とＢ範囲を逆にして、前記６０度ずつの割り出しによる１方向回転停止と１８０度の戻し回転を行う。以上の動作を繰り返すことにより、Ａ範囲とＢ範囲において全ての被成膜面に対する同時成膜処理を行うことができ、３層毎にエッチング速度の異なる有機材料誘電体薄膜を生産性良く製造できる。
【００４０】
（実施の形態６）
図５を用いて、本発明第６実施形態のフィルムコンデンサの製造装置を説明する。
【００４１】
図５において、３１は減圧保持可能な積層用真空容器、３２は紙面垂直方向に被成膜平面を有する円筒状の回転体、４０はオイルマージン吹き出し部、５０はアルミニウム蒸着源、３６はジメチロールトリシクロデカンジアクリレートを成分とする有機材料液、５１は積層真空容器３１の中に配置され有機材料液３６を冷却しながら収納する樹脂容器、５２は有機材料液３６を薄く伸展するためのＳＵＳ製ベルト、５３はベルト５２を回転するローラー１、５４は有機材料液３６を樹脂容器５１より汲み上げ、ベルト５２に転写する転写ローラー、５５はベルト５２の樹脂塗布面と反対の表面を加熱するハロゲンランプヒータ、５６はランプヒータの加熱出力を変更するコントローラ、５７は有機材料蒸気を封じ込める遮断壁、５８は有機材料蒸発圧力を制御するための、図示しない排気系に接続する制御弁である。５９は回転体３２の表面に対する樹脂蒸気開口部である。
【００４２】
本実施例において、回転体は紙面向かって右回りに所定の速度で回転する。１回転毎に、オイルマージン吹き出し部４０よりオイルマージンを回転体３２の表面に形成し、次にアルミニウム蒸着源５０より、広幅の厚み約４００Åの電極薄膜を１層形成し、次に樹脂蒸気開口部５９より樹脂蒸気が回転体３２の表面に接触して有機材料薄膜を１層形成する。以上の状態を保持したまま回転体３２を連続して回転させると有機材料薄膜と金属電極薄膜からなるコンデンサーとしてのマージン部を有する多層積層体、すなわち広幅のコンデンサー素子板を製造できる。本実施例の特徴は、回転体が３回転する毎に、加熱コントローラ５６の設定を変更し、ランプヒータ５５からベルト５２に対する熱輻射量を変更することにある。この結果、ベルト５２表面から蒸発する有機材料蒸気の蒸発成分は、３回転毎に分子構造（分子量）の異なるものとなる。例えば、ジメテロールトリシクロデカンジアクリレートは約１８０℃でモノマー成分の中の結合が切れ始める。そこで、ＳＵＳベルトは熱伝導性が保持されるように比較的薄い厚みのものを使用し、ランプヒーターからの熱輻射量を瞬時に変更して有機材料液の蒸発温度を１５０℃と１８０℃とに３回転毎に交互に変更することを繰り返す。以上の動作をすることにより、３層毎にエッチング速度の異なる有機材料誘電体薄膜を１つの有機材料蒸発要素から形成できるため、シンプルな製造装置を得ることができる。
【００４３】
（実施の形態７）
図６と図２を用いて、本発明第７実施形態のフィルムコンデンサの製造方法を説明する。
【００４４】
図６において、８ａはジメチロールトリシクロデカンジアクリレートを成分とする第１の誘電体薄膜、８ｂはフエノキシエチルアクリレート
【００４５】
【化３】
Figure 0004814408
【００４６】
【化４】
Figure 0004814408
【００４７】
を成分とする第２の誘電体薄膜、８ｃはジメチロールトリシクロデカンジアクリレートとフエノキシエチルアクリレートの積層体を等量ずつ配合した混合物からなる第３の誘電体薄膜である。
【００４８】
図２は酸素プラズマ処理装置を示す。図２において、１０は減圧保持可能な真空容器、１１は石英窓、１２は高周波を印加する電極、１３は高周波電源、１４はアルミニウムからなるマスクである。本実施例において、まず広幅の第１の誘電体薄膜８ａを真空蒸着により１層形成した表面に広幅のアルミニウム電極１ａをマージン部３を形成しながら真空蒸着により１層形成した組み合わせ層を２回連続して繰り返し、次に、広幅の第１の誘電体薄膜８ａを真空蒸着により１層形成した表面に、さらに広幅の第２の誘電体薄膜８ｂを真空蒸着により１層形成し、その後、広幅のアルミニウム電極１ａをマージン部３を形成しながら真空蒸着により１層形成した組み合わせ層を１層形成する。
【００４９】
次に、広幅の第２の誘電体薄膜８ｂを真空蒸着により１層形成した表面に広幅のアルミニウム電極１ａをマージン部３を形成しながら真空蒸着により１層形成した組み合わせ層を２回連続して繰り返す。次に、広幅の第１の誘電体薄膜８ａを真空蒸着により一層形成した表面に、さらに広幅の第２の誘電体薄膜８ｂを真空蒸着により一層形成し、その後、広幅のアルミニウム電極１ａをマージン部３を形成しながら真空蒸着により１層形成した組み合わせ層を１層形成する。マージン部は誘電体薄膜８ａ、８ｂ、８ｃの種類に拘わらず１層毎に互いに隣接する１組のマージン幅４の各間が上下の誘電体薄膜で１／２ずつずれるように積層する。以上の積層工程を約１０００回繰り返し、３０００層からなる誘電体薄膜と電極薄膜の組み合わせ層を形成する。この広幅の積層体を１組のマージン幅４の中央部分で切断して図１に示す親コンデンサ素子を形成する。次に図２に示す酸素プラズマ処理装置により、親コンデンサ素子５の電極引き出しをすべき端面を酸素プラズマに接触させて、誘電体薄膜８ａ、８ｂまたは８ｃの電極引き出し端面側部分をマージン幅４より小さい幅で化学的に選択除去して、電極１ａを前記端面より露出させる。酸素プラズマの条件は酸素ガス流量６０Ｓcm3／分、圧力１．０Torr、高周波電力４００Ｗである。
【００５０】
この条件下で、第１の誘電体薄膜８ａであるジメチロールトリシクロデカンジアクリレートのポリマー化した固体のエッチング速度は約１０００Å／分、第２の誘電体薄膜８ｂであるフエノキシエチルアクリレートは約３００Å／分であり、この２つの化学構造が異なる誘電体薄膜８ａ、８ｂはエッチング速度が異なる。この結果、電極端面において、３層毎に交互に誘電体層の凸凹面が寸法９を持って形成さ、電極１ａの引き出し形状が３層毎に変化する。このため電極端面に黄銅を溶射して、端面電極６を形成するときに、端面電極６と電極１ａの間には良好な電気的接合が得られ、端面電極６は電極１ａと誘電体８ａ、８ｂに対して高い付着強度を有するフィルムコンデンサを製造できる。誘電体薄膜８ｃの場合も、上記８ｂと同様に、高い付着強度を有するフィルムコンデンサを製造できる。
【００５１】
（実施の形態８）
図７を用いて、本発明第８実施形態のフィルムコンデンサの製造装置を説明する。
【００５２】
図７において、３１は減圧保持可能な積層用真空容器、３２は紙面垂直方向に被成膜平面を有する円筒状の回転体、４０はオイルマージン吹き出し部、５０はアルミニウム蒸着源、３４ａ及び３４ｂは第１及び第２の有機材料蒸着容器、３５ａ及び３５ｂは前記第１及び第２の有機材料蒸着容器に収納されたそれぞれ第１及び第２の有機材料蒸着ルツボ、３７ａと３７ｂは前記第１及び第２の有機材料蒸着容器と積層用兵空容器３１を遮断するそれぞれ第１と第２の開閉板、３６ａはジメチロールトリシクロデカンジアクリレートを成分とする第１の有機材料液、３６ｂはフエノキシエチルアクリレートを成分とする第２の有機材料液である。
【００５３】
６０は回転体３２の回転位置を計測するエンコーダ、６１は回転体３２の回転回数と回転角度によって開閉板１、２の開閉を制御する開閉コントローラである。第１の有機材料液３６ａは図示されない真空排気系に接続された第１の有機材料蒸着容器３４ａに収納された第１の有機材料蒸着ルツボ３５ａの中で加熱され、蒸気化する。第２の有機材料液３６ｂは図示されない真空排気系に接続された第２の有機料蒸着容器３４ｂに収納された第２の有機材料蒸着ルツボ３５ｂの中で加熱され、蒸気化する。
【００５４】
本実施例において、回転体は紙面向かって右廻りに所定の速度で回転する。１回転毎に、オイルマージン吹き出し部４０よりオイルマージンを回転体３２の表面に形成し、次にアルミニウム蒸着源５０より、広幅の厚み約４００Åの電極薄膜を１層形成する。ここで、第１もしくは第２の開閉板を開くことによって第１もしくは第２の有機材料蒸気が回転体３２の被成膜面に接触し冷却されて、第１もしくは第２の有機材料誘電体薄膜が形成できる。
【００５５】
以上の動作を可能とする本装置における特徴は、まず、回転体３２が２回転する間、第１の開閉板３７ａを開いて第１の有機材料を蒸着し、この間第２の開閉板３７ｂは閉めて第２の有機材料の蒸着を停止する。次の１回転の間に第２の開閉板３７ｂをまず開き、完全に開いた後で第１の開閉板３７ａを閉める。次に、回転体３２が２回転する間、第２の開閉板３７ｂを開いて第１の有機材料を蒸着し、この間第１の開閉板３７ａは閉めて第２の有機材料の蒸着を停止する。次の１回転の間に第１の開閉板３７ａをまず開き、完全に開いた後で第２の開閉板３７ｂを閉める。以上の動作において第１及び第２の開閉板の開閉のタイミングはエンコーダ６０において検出した回転回数と、回転角度を開閉コントローラー６１に送り、常に所定の位置で開閉するようにする。この動作を回転体３２の回転回数に対し３回毎に交互に繰り返す。以上の動作の結果、３層毎にエッチング速度の異なる広幅の積層コンデンサ素子板を形成させることができる。
【００５６】
（実施の形態９）
図８、図２を用いて、本発明第９実施形態のフィルムコンデンサの製造方法を説明する。
【００５７】
１００ａは厚み約０．８μm のポリフェニレンサルフアイド（ＰＰＳ）フィルムを用い片面金属化フィルム、１００ｂは厚み約０．８μm のポリエチレンナフタレート（PEN ）フィルムを用いた片面金属化フィルム、１ａは電極となるアルミニウム蒸着膜、３はマージン部、４はマージン幅である。まず、図８に示すように、複数のコンデンサ要素が形成されるように複数のマージン部３が設けられている広幅の片面金属化フィルム１００ａと１００ｂとを各フィルムが２層連続で交互になるよう、各フィルム２枚ずつ合計４枚を同時に巻回する。フィルムの重ね合わせに関しては、１層毎に互いに隣接する１組のマージン部３の各間が２枚のフィルムで１／２づつずらせて重ねるように巻回する。得られた巻回物を１組のマージン幅４の中央部分で切断して、図１０（Ａ）に示す親コンデンサ５を形成する。次に親コンデンサ５の電極引出しをすべき端面を酸素ガスプラズマもしくはオゾンガスに接触させて、図１０（B ）に示すようにフィルム１の電極引出し端面側部分をマージン幅４より小さい幅で化学的に電極１ａに対して選択除去して、片面金属化フィルム１の電極１ａを前記端面より露出させるとともに、電極引出し端面部の各誘電体が凸凹をなすよう処理する。その後、前記端面に黄銅を主とする金属を溶射し、図１０（Ｃ）に示すように、端面電極６を形成した後、マージンの形成方向と直角な方向へ親コンデンサ５を切断することにより、単位コンデンサ素子を得る。この結果、電極端面において、２層毎に交互に誘電体層の凸凹面が寸法９を持って形成され、電極１ａの引き出し形状が２層毎に変化する。このため電極端面に黄銅を溶射して、端面電極６を形成するときに、端面電極６と電極１ａの間には良好な電気的接合が得られ、端面電極６は電極１ａと誘電体８ａ、８ｂに対して強い付着強度を有するフィルムコンデンサを製造できる。
【００５８】
【発明の効果】
以上のように本発明によれば、次の有利な効果を得ることができる。
本発明のフィルムコンデンサの製造技術によれば、複数の電極と、前記電極間に配置されている、少なくとも１層以上の有機材料からなる誘電体と、前記電極引き出し端面にそれぞれ付与され、前記電極と接続される端面電極とを備え、前記誘電体の端面が、２層以上の複数層を単位として、単位毎に交互に凸凹面をなすように、前記電極から後退してなる構成とすることにより、誘電体の厚みが０．８μm 以下の超薄膜誘電体積層型フィルムコンデンサにおいても、電極と端面電極との良好な電気的接触と、端面電極として十分な付着強度を備えた高品質な積層型フィルムコンデンサが得られる。
【００６０】
請求項１のフィルムコンデンサの製造方法によれば、厚みが０．８μｍ以下の広幅の有機材料からなる第１の誘電体薄膜を真空蒸着により一層形成した表面に広幅の金属電極を真空蒸着により一層形成した第１の組合せ層を２層以上連続して形成する工程と、前記第１の誘電体薄膜に対し化学構造式が同じで粘度が異なり、かつ厚みが０．８μｍ以下の広幅の有機材料からなる第２の誘電体薄膜を真空蒸着により一層形成した表面に広幅の金属電極を真空蒸着により一層形成した第２の組合せ層を２層以上連続して形成する工程と、２層以上の前記第１の組合せ層と２層以上の前記第２の組合せ層を真空蒸着により交互に積層して、複数のコンデンサ要素を有する積層体を形成する工程と、前記積層体を電極引き出し端面部分で切断する工程と、前記電極引き出し端面を酸素プラズマ又はオゾンを含むガスに接触させて前記第１の誘電体薄膜の第１の電極引き出し端面部分および前記第２の誘電体薄膜の第２の電極引き出し端面部分にエッチングにより凸凹面を形成する工程と、前記凸凹面が形成された前記第１の電極引き出し端面部分および前記第２の電極引き出し端面部分に端面電極を形成する工程と、を有することにより、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、電極引出し端面部において誘電体フィルムの凸凹量が十分に確保できるフィルムコンデンサの製造方法が得られる。
【００６１】
請求項２及び３のフィルムコンデンサの製造装置によれば、真空容器内に収納された回転体と、前記回転体の回転軸と平行をなす回転体表面に対向して配置する金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置するコンデンサマージン形成要素と、前記回転体の回転軸と平行をなす回転体表面に対し開閉板を挿んで対向して配置した異なる有機材料を有する有機材料蒸発要素を２個以上有するフィルムコンデンサ製造装置において、第１の有機材料蒸発要素に対する第１の開閉板を開いている間は第２の有機材料蒸発要素に対する第２の開閉板を閉め、また第２の開閉板を開いている間は第１の開閉板を閉め、前記回転体表面の全面が前記同種の有機材料蒸発要素の対面を２回通過する間は、前記開閉板の一方のみの連続的もしくは断続的な開動作とすることを特徴とすることにより、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、２層以上の間隔でエッチング速度の異なる広幅の積層コンデンサ素子板を形成させることができる結果、電極引出し端面部において酸素プラズマに接触させて電極を露出するときに、誘電体フィルムの凸凹量が十分に確保できるフィルムコンデンサの積層製造装置が得られる。
【００６２】
請求項４のフィルムコンデンサの製造装置によれば、真空容器内に収納された回転体と、前記回転体の回転軸と平行をなす回転体表面に対し開閉板を挿んで対向して配置した、異なる有機材料を有する２個以上の有機材料蒸発要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置した前記有機材料蒸発要素と同個数の金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置した前記有機材料蒸発要素と同個数のコンデンサマージン形成要素を有するフィルムコンデンサ製造装置において、前記回転体の回転方向に対し前記有機材料蒸発要素と前記コンデンサマージン形成要素と前記金属薄膜形成要素を１個ずつ順番に１つの群として配置し、前記回転体が前記群により形成される角度範囲を２回以上往復した後、次の群に往復運動範囲を回転移動することを繰り返し、前記有機材料蒸発要素に対する各前記開閉板は同時に開くことを特徴とすることにより、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、２層以上の間隔でエッチング速度の異なる広幅の積層コンデンサ素子板を形成させることができる結果、電極引出し端面部において酸素プラズマに接触させて電極を露出するときに、誘電体フィルムの凸凹量が十分に確保でき、且つ生産性に優れたフィルムコンデンサの積層製造装置が得られる。
【００６３】
請求項５のフィルムコンデンサの製造装置によれば、真空容器内に収納された回転体と、前記回転体の回転軸と平行をなす回転体表面に対向して配置する金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置するコンデンサマージン形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置した有機材料蒸発要素とを有するフィルムコンデンサ製造装置において、前記有機材料蒸発要素は、有機材料を薄く伸展する蒸発板と、前記蒸発板表面に前記有機材料を供給する手段と、前記蒸発板を輻射加熱する有機材料加熱手段と、熱輻射量制御電源と、前記有機材料の蒸気を囲む容器と、前記容器を排気する手段と、前記容器内圧力を制御する排気調整弁とを有し、前記回転体が２回転以上回転する毎に、前記有機材料加熱手段の前記蒸発板への熱輻射量と前記容器内圧力を変化させることを繰り返し、前記有機材料の分子量を２回転以上毎に交互に変化させることを特徴とすることにより、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、電極引出し端面部において酸素プラズマに接触させて電極を露出するときに、誘電体フィルムの凸凹量が十分に確保できるフィルムコンデンサを単一の有機材料蒸発源から得ることのできるシンプルな積層製造装置が得られる。
【００６５】
請求項６のフィルムコンデンサの製造装置によれば、真空容器内に収納された回転体と、前記回転体の回転位置を割り出す回転位置計と、前記回転体の回転軸と平行をなす回転体表面に対向して配置する金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置するコンデンサマージン形成要素と、前記回転体の回転軸と平行をなす回転体表面に対し、前記回転位置計と連動した開閉板を挿んで対向して配置した異なる有機材料を有する有機材料蒸発要素を２個以上有するフィルムコンデンサ製造装置において、前記回転体を連続して回転させながら、有機材料蒸発要素に対する第１の開閉板を開き第２の開閉板を閉めた状態と、第１の開閉板を開き第２の開閉板を開いた状態と、第１の開閉板を閉め第２の開閉板を開く状態とを、前記回転位置計と連動して交互に繰り返し、前記回転体表面の全面が前記同種の有機材料蒸発要素の対面を２回通過する間は、前記開閉板の一方のみが連続的に開くことを特徴とすることにより、誘電体の厚みが０．８μｍ以下の積層型フィルムコンデンサに対し、電極引出し端面部において酸素プラズマに接触させて電極を露出するときに誘電体フィルムの凸凹量が十分に確保できるフィルムコンデンサを、回転体を連続的に回転させながら積層できる生産性の高い積層製造装置が得られる。
【００６６】
以上に述べた本発明のフィルムコンデンサの製造方法によれをば複数のコンデンサ要素を有する広幅の片面金属化フィルムを巻き取りによって積層体とする工程と、前記工程で得られた積層物を電極引き出し端面部分で切断する工程と、前記電極引き出し端面を酸素プラズマもしくはオゾンを含むガスに接触させて、前記誘電体薄膜の前記電極引き出し端面部分を前記電極から後退させる工程と、前記電極引き出し端面部分に端面電極を形成する工程とを有するフィルムコンデンサ製造方法において、２層以上連続した第１の片面金属化フィルムの巻き取りと、前記第１の片面金属化フィルムとエッチング速度が異なり且つ２層以上連続した第２の片面金属化フィルムの巻き取りを同時に行って積層体を形成することにより、誘電体の厚みが０．８μm 以下の片面金属化フィルムを積層して形成するフィルムコンデンサにおいても、電極引出し端面部において誘電体フィルムの凸凹量が十分に確保できるフィルムコンデンサの製造方法が得られる。
【図面の簡単な説明】
【図１】本発明の第１乃至３の実施形態によるフィルムコンデンサの構造を示す断面図
【図２】本発明の第２、３、７および９の実施形態で用いたプラズマ処理装置の断面図
【図３】本発明の第４実施形態に用いたフィルムコンデンサの製造装置の断面図
【図４】本発明の第５実施形態に用いたフィルムコンデンサの製造装置の断面図
【図５】本発明の第６実施形態に用いたフィルムコンデンサの製造装置の断面図
【図６】本発明の第７実施形態に用いたフィルムコンデンサの製造方法を示す断面図
【図７】本発明の第８実施形態に用いたフィルムコンデンサの製造装置の断面図
【図８】本発明の第９実施形態に用いたフィルムコンデンサの製造方法を示す斜視図
【図９】従来のフィルムコンデンサの製造方法を示す斜視図
【図１０】従来のフィルムコンデンサの製造方法を示す断面図
【符号の説明】
８ａ 第１の誘電体薄膜
８ｂ 第２の誘電体薄膜
８ｃ 第３の誘電体薄膜
１３ 高周波電源
３１ 積層真空容器
３２ 回転体
３３ コンデンサー素子板
３４ａ 第１の有機材料蒸発容器
３４ｂ 第２の有機材料蒸発容器
３６ａ 第１の有機材料液
３６ｂ 第２の有機材料液
３７ａ 第１の開閉板
３７ｂ 第２の開閉板
３８ スパッタ ターゲット
４０ オイルマージン吹き出し部
５０ アルミニウム蒸着部
５２ ベルト
５５ ランプヒーター
５６ 加熱出力コントローラー
６０ エンコーダー
６１ 開閉板コントローラー
１００ａ 第１の片面金属化フィルム
１００ｂ 第２の片面金属化フィルム[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film capacitor manufacturing method and a manufacturing apparatus thereof.
[0002]
[Prior art]
In recent years, along with technological advancement in the field of information communication, there is a strong demand for downsizing, weight reduction, and high performance of electronic components constituting control equipment. Film capacitors are no exception, and efforts are being made to further reduce the thickness of dielectric films. For example, a method for forming a capacitor by forming a metal thin film electrode at the same time while forming a thin film of a dielectric having a thickness of 1 μm or less by a vacuum deposition method will be required in contrast to a method of manufacturing a film as a dielectric in advance.
[0003]
Hereinafter, an example of a conventional method for producing a multilayer film capacitor will be described with reference to the drawings. Conventionally, when a base material of a wound laminated type film capacitor is cut, an electrical contact between the electrode and the end face electrode and a sufficient adhesion strength between the end face electrode are obtained for a film capacitor having a cut end face. A method for obtaining this is disclosed in Japanese Patent Publication No. 08-011433. FIG. 9 and FIG. 10 show an example of a conventional method for manufacturing a wound film capacitor. In the figure, 1 is a single-sided metallized film using a polyphenylene sulfide (PPS) film having a thickness of about 2 μm, 1a is an aluminum deposited film as an electrode, 3 is a margin part, 4 is a margin width, 5 is a parent capacitor, Reference numeral 6 denotes an end face electrode. First, as shown in FIG. 10, a wide single-sided metallized film 1 provided with a plurality of margin portions 3 so as to form a plurality of capacitor elements is placed between each pair of adjacent margin portions 3. Is wound so that the two films are shifted by 1/2 each other. The obtained wound product is cut at the center portion of one set of margin widths 4 to form a parent capacitor 5 shown in FIG. Next, the end surface of the parent capacitor 5 where the electrode is to be extracted is brought into contact with oxygen gas plasma or ozone gas, and the electrode extraction end surface side portion of the film 1 is chemically smaller than the margin width 4 as shown in FIG. The electrode 1a is selectively removed from the electrode 1a to expose the electrode 1a of the single-sided metallized film 1 from the end face, and each dielectric on the electrode lead-out end face is processed to be uneven. Thereafter, a metal mainly composed of brass is sprayed on the end face, and after forming the end face electrode 6 as shown in FIG. 10C, the parent capacitor 5 is cut in a direction perpendicular to the margin forming direction. A unit capacitor element is obtained. By the above method, since the non-metal side of the metallized film with a minute gap when wound is removed preferentially over the metallized part side without it, the end face of each film is tapered. In addition, a small and uneven amount in a short fixed range not exceeding 0.2 mm is formed on the entire end face without regularity. As a result, good electrical contact between the electrode 1a and the end face electrode 6 and sufficient adhesion strength of the end face electrode 6 can be obtained, and the film capacitor can be downsized.
[0004]
[Problems to be solved by the invention]
However, in the conventional method shown in FIG. 9 and FIG. 10, when the thickness of the dielectric film is reduced to 1.0 μm or less, the unevenness amount of the dielectric film cannot be sufficiently obtained at the electrode lead end face part. Moreover, in the lamination method by dielectric thin film formation by metal deposition and metal thin film formation, there is no difference in the small gap between the non-metal side and the metallization side interface of the conventional metallized film. In addition, unevenness due to taper processing of the film end face does not occur effectively.
[0005]
As a result, there arises a problem that it is difficult to obtain good electrical bonding at the electrode end face and adhesion strength to the end face electrode.
In view of the above-mentioned conventional problems, the present invention is formed by cutting a base material of a laminated or wound type film capacitor in which an ultra-thin organic thin film dielectric and metal thin film electrodes are alternately stacked. A laminated film capacitor capable of obtaining good electrical contact between the electrode and the end face electrode and sufficient adhesion strength of the end face electrode, and a sufficient amount of unevenness of the dielectric film at the end face of the electrode lead And a manufacturing apparatus for laminating the dielectric thin film and the metal electrode thin film.
[0006]
[Means for Solving the Problems]
In the film capacitor manufacturing technology of the present invention, a plurality of electrodes, a dielectric made of at least one layer of organic material disposed between the electrodes, and an electrode lead-out end surface are provided, And the end face of the dielectric has a plurality of layers of two or more layers as a unit, and the degree of chemical etching is changed to form an uneven surface alternately for each unit. This is a structure that is shallow or deeply retracted from the position. By using two or more layers as a unit, sufficient contact and improved adhesion strength can be achieved.
[0007]
  And, according to the present invention, a high-quality laminated film having good electrical contact between the electrode and the end face electrode and sufficient adhesion strength of the end face electrode to the laminated film capacitor having a dielectric thickness of 0.8 μm or less. Type film capacitor is obtained.
[0008]
  ContractClaim1In the method for manufacturing a film capacitor according to the invention, a wide metal electrode is formed on one surface by vacuum deposition on the surface on which the first dielectric thin film made of a wide organic material having a thickness of 0.8 μm or less is formed by vacuum deposition. The step of continuously forming two or more first combination layers and the first dielectric thin film having the same chemical structural formula, different viscosities (different molecular weights), and a wide width of 0.8 μm or less A step of continuously forming two or more second combination layers each having a wide metal electrode formed by vacuum deposition on the surface of the second dielectric thin film made of the organic material formed by vacuum deposition; A step of alternately stacking the first combination layer and two or more second combination layers by vacuum deposition to form a stacked body having a plurality of capacitor elements; and Part Cutting in minutes, and bringing the electrode lead-out end face into contact with a gas containing oxygen plasma or ozone so that the first electrode lead-out end face portion of the first dielectric thin film and the second dielectric thin film second Forming a concave / convex surface by etching on an electrode lead end surface portion, and forming an end face electrode on the first electrode lead end surface portion and the second electrode lead end surface portion on which the concave / convex surface is formed. Is.
[0009]
  This claim1According to the present invention, it is possible to obtain a method for manufacturing a film capacitor that can sufficiently secure the unevenness of the dielectric film at the end surface of the electrode lead with respect to the multilayer film capacitor having a dielectric thickness of 0.8 μm or less. Claim2as well as3In the film capacitor manufacturing apparatus according to the invention, a rotating body housed in a vacuum vessel, a metal thin film forming element disposed to face a rotating body surface parallel to a rotation axis of the rotating body, and the rotating body Capacitor margin forming elements arranged opposite to the surface of the rotating body parallel to the rotation axis, and different organic materials arranged opposite to each other with an opening / closing plate inserted into the surface of the rotating body parallel to the rotation axis of the rotating body In the film capacitor manufacturing apparatus having two or more organic material evaporating elements having the second closed plate for the second organic material evaporating element while the first opening / closing plate for the first organic material evaporating element is opened The first opening / closing plate is closed while the second opening / closing plate is opened, and the opening / closing plate is closed while the entire surface of the rotating body passes the opposite surface of the organic material evaporation element of the same kind twice. Only one of It is characterized in that a continuous or intermittent opening operation.
[0010]
  This claim2as well as3According to the invention, when a dielectric film having a thickness of 0.8 μm or less is exposed to an oxygen plasma at the end surface of the electrode, the dielectric film can have a sufficient unevenness when the electrode is exposed. A laminated production apparatus for film capacitors is obtained. Claim4In the film capacitor manufacturing apparatus according to the invention, the rotating body housed in the vacuum vessel and the different organic materials disposed opposite to each other with an opening / closing plate inserted into the rotating body surface parallel to the rotating shaft of the rotating body. Two or more organic material evaporation elements having a material, the same number of metal thin film forming elements as the organic material evaporation elements arranged opposite to the surface of the rotating body parallel to the rotation axis of the rotating body, and the rotating body In the film capacitor manufacturing apparatus having the same number of capacitor margin forming elements as the organic material evaporating elements arranged facing the surface of the rotating body parallel to the rotation axis of the rotating body, the organic material evaporating element with respect to the rotating direction of the rotating body And the capacitor margin forming element and the metal thin film forming element one by one in order as a group, and the angle range in which the rotating body is formed by the group is more than twice After recovery, repeatedly rotating movement reciprocating range for the next group, the closing plate of each with respect to the organic material evaporation element is characterized in that the opening at the same time.
[0011]
  Claim4With this invention, when a dielectric film with a thickness of 0.8 μm or less is exposed to an oxygen plasma at the end surface of the electrode when the electrode is exposed, a sufficient amount of unevenness of the dielectric film can be secured. In addition, it is possible to obtain a film capacitor lamination manufacturing apparatus excellent in productivity. In the film capacitor manufacturing apparatus of the invention of claim 5, a rotating body housed in a vacuum vessel, and a metal thin film forming element disposed to face the rotating body surface parallel to the rotation axis of the rotating body, A capacitor margin forming element disposed opposite to the rotating body surface parallel to the rotation axis of the rotating body; and an organic material evaporation element disposed opposite to the rotating body surface parallel to the rotation axis of the rotating body.In the film capacitor manufacturing apparatus having the above, the organic material evaporation element,An evaporating plate that extends organic material thinly, and on the evaporating plate surfaceSaidMeans for supplying organic materials;SaidOrganic material heating means for radiatively heating the evaporation plate, thermal radiation amount control power supply, and the organic materialSteamA container surrounding the container, means for exhausting the container, and an exhaust regulating valve for controlling the pressure in the container.ShiEach time the rotating body rotates two or more times, the organic materialHeating meansThe heat radiation amount to the evaporation plate and the pressure in the container are repeatedly changed, and the molecular weight of the organic material is alternately changed every two rotations or more.
[0012]
  This claim5According to the invention, when a dielectric film having a thickness of 0.8 μm or less is exposed to an oxygen plasma at the end surface of the electrode, the dielectric film can have a sufficient unevenness when the electrode is exposed. Laminate manufacturing equipment capable of obtaining a film capacitor from a single type of organic material evaporation source is obtained..
[0013]
  ContractClaim6In the film capacitor manufacturing apparatus according to the invention, a rotating body housed in a vacuum vessel, a rotational position meter for determining a rotational position of the rotating body, and a rotating body parallel to the rotational axis of the rotating bodytableA metal thin film forming element disposed facing the surface, a capacitor margin forming element disposed facing the surface of the rotating body parallel to the rotation axis of the rotating body, and a rotating body parallel to the rotation axis of the rotating body In a film capacitor manufacturing apparatus having two or more organic material evaporating elements having different organic materials arranged opposite to each other by inserting an opening / closing plate interlocked with the rotational position meter with respect to the surface, the rotating body is continuously rotated. However, the state where the first opening / closing plate for the organic material evaporation element is opened and the second opening / closing plate is closed, the state where the first opening / closing plate is opened and the second opening / closing plate is opened, and the first opening / closing plate is closed. The state where the second opening / closing plate is opened is alternately repeated in conjunction with the rotational position meter, and while the entire surface of the rotating body passes the opposite surface of the organic material evaporation element of the same kind twice, the opening / closing plate Only one of the is open continuously And it is characterized in and.
[0014]
  This claim6According to the invention, for a multilayer film capacitor having a dielectric thickness of 0.8 μm or less, a film that can sufficiently secure the unevenness of the dielectric film when the electrode is exposed by contacting oxygen plasma at the end surface of the electrode lead A highly productive laminate manufacturing apparatus capable of stacking capacitors while continuously rotating the rotating body is obtained.
[0015]
In the method for producing a film capacitor of the present invention, a wide single-sided metallized film having a plurality of capacitor elements is wound to form a laminate, and the laminate obtained in the step is cut at an electrode lead end surface portion. A step of bringing the electrode lead end face into contact with a gas containing oxygen plasma or ozone to retract the electrode lead end face portion of the dielectric thin film from the electrode; and forming an end face electrode on the electrode lead end face portion A film capacitor manufacturing method including a step of: winding a first single-sided metallized film continuous with two or more layers, and a second second continuous with two or more layers different in etching rate from the first single-sided metallized film. It consists of winding a single-sided metallized film simultaneously and forming a laminated body.
[0016]
According to these inventions, the production of a film capacitor in which the unevenness of the dielectric film can be sufficiently secured at the end surface of the electrode lead for a film capacitor formed by laminating a single-sided metallized film having a dielectric thickness of 0.8 μm or less. A method is obtained.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to FIGS.
(Embodiment 1)
In FIG. 1, the structure of the film capacitor in 1st Embodiment of this invention is shown. In FIG. 1, 1a is an aluminum vapor deposition film to be an electrode, 3 is a margin portion for forming a capacitor element, 4 is a margin width, 5 is a parent capacitor, 6 is an end face electrode, and 8a and 8b are about 0.4 μm thick. These are first and second dielectrics made of the organic material. The difference between the dielectrics 8a and 8b is that the end surface of the dielectric 8a penetrates the end surface of the dielectric 8b as close as possible to the margin 3 at the end surface from which the electrodes are drawn. Each of the dielectrics 8a and 8b is continuously formed in three layers. As a result, the uneven surface of the dielectric layer is alternately formed with a dimension 9 every three layers on one electrode end surface, and the lead-out shape of the electrode 1a changes every three layers.
[0018]
For this reason, when the end face electrode 6 is formed by spraying brass on the end face of the electrode, a good electrical connection is obtained between the end face electrode 6 and the electrode 1a. The end face electrode 6 has the electrode 1a and the dielectric 8a. , 8b has high adhesion strength.
(Embodiment 2)
A method for manufacturing a film capacitor according to a second embodiment of the present invention will be described with reference to FIGS.
[0019]
In FIG. 1, 8a is dimethylol tricyclodecane diacrylate.
[0020]
[Chemical 1]
Figure 0004814408
[0021]
A first dielectric thin film comprising
8b is phenoxyethyl acrylate
[0022]
[Chemical 2]
Figure 0004814408
[0023]
Is a second dielectric thin film.
FIG. 2 shows an oxygen plasma processing apparatus. In FIG. 2, 10 is a vacuum container capable of maintaining a reduced pressure, 11 is a quartz window, 12 is an electrode for applying a high frequency, 13 is a high frequency power source, and 14 is a mask made of aluminum.
[0024]
  In this example, first, a combined layer formed by forming a wide aluminum electrode 1a on one surface by vacuum deposition while forming a margin portion 3 on a surface on which a wide first dielectric thin film 8a is formed by vacuum deposition three times in succession. And then repeat, then wide2A combination layer in which one wide layer of aluminum electrode 1a is formed on the surface of the thin dielectric thin film 8b formed by vacuum vapor deposition while forming the margin portion 3 is repeated three times in succession. The margin portions are laminated so that each pair of margin widths 4 adjacent to each other is shifted by 1/2 between the upper and lower dielectric thin films regardless of the type of the dielectric thin films 8a and 8b. The above lamination process is repeated about 1000 times to form a combined layer of 3000 layers of dielectric thin film and electrode thin film. This wide laminate is cut at the center of a set of margin widths 4 to form the parent capacitor element shown in FIG.
[0025]
Next, the oxygen plasma processing apparatus shown in FIG. 2 is used to bring the end surface of the parent capacitor element 5 from which the electrode is to be drawn into contact with the oxygen plasma, so Then, the electrode 1a is exposed from the end face. The condition of oxygen plasma is oxygen gas flow rate 60ScmThree/ Min (ScmThree/ Min is the flow rate per minute in the standard state), the pressure is 1.0 Torr, and the high-frequency power is 400 W.
[0026]
Removal of an organic material by oxygen plasma is performed by decomposing oxygen radicals generated by the plasma into bonds such as C—C, C—H, and C—S that constitute the organic material, and the organic matter is converted to CO.2, H2O, SO2This is done by evacuating the gas. Under this condition, the etching rate of the polymerized solid of dimethylol tricyclodecane diacrylate, which is the first dielectric thin film 8a, is about 1000 Å / min, and the phenoxyethyl acrylate, which is the second dielectric thin film 8b, is The dielectric thin films 8a and 8b having different chemical structures have different etching rates.
[0027]
As a result, the uneven surface of the dielectric layer is alternately formed with a dimension of 9 every three layers on the electrode end surface, and the lead shape of the electrode 1a changes every three layers. Therefore, when the end face electrode 6 is formed by spraying brass on the end face of the electrode, a good electrical connection is obtained between the end face electrode 6 and the electrode 1a, and the end face electrode 6 is connected to the electrode 1a and the dielectric layers 8a and 8b. Film capacitors having strong adhesive strength can be produced.
[0028]
Note that the heating temperature of the vacuum deposition source of the dielectric thin film is set to be equal to or lower than the thermal decomposition temperature of the resin monomer. For example, in dimethylol tricyclodecane diacrylate, it is 170 degrees C or less. In addition, on the surface on which the dielectric thin film is formed, the thin film forming surface is kept at a constant temperature using cooling water or the like in order to avoid partial solidification due to granular adhesion due to thermal nonuniformity or nonuniform irradiation of ultraviolet rays, It also prevents light from entering.
[0029]
(Embodiment 3)
A method for manufacturing a film capacitor according to a third embodiment of the present invention will be described with reference to FIGS.
In FIG. 1, 8a is a first dielectric thin film containing dimethylol tricyclodecane diacrylate having a viscosity of about 135 mPa · sec (25 ° C.), and 8b is dimethylol tricyclo having a viscosity of about 170 mPa · sec (25 ° C.). It is the 2nd dielectric material thin film which uses decanediacrylate as a component.
[0030]
The above-mentioned dielectric thin films are structural isomers having the same chemical formula, and the viscosity is different due to the difference in the bonding position of the methylol group, and as a result, the degree of curing when polymerized is estimated to be different.
[0031]
  In this example, first, a combined layer formed by forming a wide aluminum electrode 1a on one surface by vacuum deposition while forming a margin portion 3 on a surface on which a wide first dielectric thin film 8a is formed by vacuum deposition three times in succession. And then repeat, then wide2A combination layer in which one wide layer of aluminum electrode 1a is formed on the surface of the thin dielectric thin film 8b formed by vacuum vapor deposition while forming the margin portion 3 is repeated three times in succession. Regardless of the type of dielectric thin film 8a, 8b, the margin portion is ½ of the upper and lower dielectric thin films between each pair of adjacent margin widths 4 for each layer.ZLaminate so as to slip.
[0032]
The above lamination process is repeated about 1000 times to form a combined layer of 3000 layers of dielectric thin film and electrode thin film. This wide laminate is cut at the center of a set of margin widths 4 to form the parent capacitor element shown in FIG. Next, the oxygen plasma processing apparatus shown in FIG. 2 is used to bring the end face of the parent capacitor element 5 from which the electrode is to be drawn into contact with the oxygen plasma, so that the electrode lead end face side portion of the dielectric thin films 8a and 8b has a width smaller than the margin width 4. Then, the electrode 1a is exposed from the end face. The oxygen plasma conditions at this time are an oxygen gas flow rate of 60 scc / min, a pressure of 1.0 Torr, and a high-frequency power of 400 W.
[0033]
Under this condition, the etching rate of the polymerized solid of dimethylol tricyclodecane diacrylate, which is the first dielectric thin film 8a, is about 700 、 / min, and the dimethylol tricyclodecanedi, which is the second dielectric thin film 8b. The acrylate is about 1000 liters / minute, and the dielectric thin films 8a and 8b having the same two chemical structures have different viscosities and different etching rates. As a result, the uneven surface of the dielectric layer is alternately formed with a dimension 9 every three layers on the electrode end surface, and the lead-out shape of the electrode 1a changes every three layers. For this reason, when the end face electrode 6 is formed by thermally spraying brass on the end face of the electrode, a good electrical connection is obtained between the end face electrode 6 and the electrode 1a, and the end face electrode 6 includes the electrode 1a and the dielectric 8a, A film capacitor having strong adhesion strength to 8b can be manufactured.
[0034]
(Embodiment 4)
A film capacitor manufacturing apparatus according to a fourth embodiment of the present invention will be described with reference to FIG.
In FIG. 3, 31 is a vacuum container for stacking that can be held under reduced pressure, 32 is a hexagonal rotating body having a film-forming plane in the direction perpendicular to the paper surface, 33 is a wide capacitor element plate, and 34a and 34b are first parts that can be held under reduced pressure. First and second organic material vapor deposition containers 35a and 35b are first and second organic material vapor deposition crucibles housed in the first and second organic material vapor deposition containers, respectively, and 37a and 37b are first and second organic material vapor deposition crucibles, respectively. The first and second open / close plates that shut off the organic material vapor deposition container 2 and the stacking vacuum container 31, respectively, 36a is a first organic material liquid containing dimethylol tricyclodecane diacrylate, and 36b is phenoxy. It is the 2nd organic material liquid which uses ethyl acrylate as a component. The first organic material liquid 36a is heated and vaporized in a first organic material deposition crucible 35a housed in a first organic material deposition vessel 34a connected to a vacuum exhaust system (not shown). The second organic material liquid 36b is heated and vaporized in a second organic material vapor deposition crucible 35b housed in a second organic material vapor deposition vessel 34b connected to a vacuum exhaust system (not shown). 38 is an aluminum target for sputtering, 39 is a DC power source for sputtering, 40 is an oil margin blowing portion, and 41 is oil for forming a margin.
[0035]
In this embodiment, the rotator 32 repeats rotation and stop in one direction, the organic material evaporation container 34a or 34b, then the oil margin blowout portion 40, then the sputtering target 38, and each film formation surface in turn. Make the counter stand still. The first or second organic material vapor is brought into contact with the film formation surface of the rotator 32 and cooled by opening the first or second opening / closing plate in a state of being opposed to be stationary. A dielectric material thin film can be formed. At the same time, the sputtering power supply 39 is turned on, and an electrode thin film made of aluminum can be formed on another deposition surface. At the same time, the oil margin blow-out portion 40 and the blocking vacuum plate 43 that shuts off the laminated vacuum container 31 can be opened to form a margin portion made of oil on another film formation surface. Multilayer stacking can be performed by performing the above film forming operation while the rotation of the rotating body 32 is repeated 600 times. In the present apparatus that enables the above operation, the second opening / closing plate is closed to deposit the second organic material, particularly while the first opening / closing plate is opened to vaporize the first organic material. Stop. Further, while the second opening / closing plate is opened and the second organic material is vaporized, the first opening / closing plate is closed to stop the vapor deposition of the first organic material. This operation can be alternately performed every three times with respect to the number of rotations of the rotating body 32 to repeat the formation of three consecutive layers of the same kind of organic material thin film and metal electrode thin film. As a result, a wide multilayer capacitor element plate 33 having a different etching rate for every three layers can be formed.
[0036]
(Embodiment 5)
A film capacitor manufacturing apparatus according to a fifth embodiment of the present invention will be described with reference to FIG.
In FIG. 4, 31 is a vacuum container for stacking that can be held under reduced pressure, 32 is a hexagonal rotating body having a film-forming plane in the direction perpendicular to the paper surface, 33 is a wide capacitor element plate, and 34a and 34b are first holdable under reduced pressure. The first and second organic material vapor deposition containers are connected to the laminated vacuum container 31. 35a or 35b is a first or second organic material vapor deposition crucible housed in the first and second organic material vapor deposition vessels, and 37a and 37b are the first and second organic material vapor deposition vessels and a stacking vacuum vessel. First and second opening / closing plates for blocking 31; 36a, a first organic material liquid containing dimethylol tricyclodecane diacrylate as a component; 36b, a second organic material liquid containing phenoxyethyl acrylate as a component It is. The first organic material liquid 36a is heated and vaporized in a first organic material deposition crucible 35a housed in a first organic material deposition vessel 34a connected to a vacuum exhaust system (not shown). The second organic material liquid 36b is heated and vaporized in a second organic material vapor deposition crucible 35b housed in a second organic material vapor deposition vessel 34b connected to a vacuum exhaust system (not shown). 38a and 38b are first and second aluminum targets for sputtering that are held in a vacuum vessel connected to the stacked vacuum vessel 33 via a gate valve 42a or 42b, and 39a and 39b are for first and second sputtering devices. DC power supplies 40a and 40b are first and second oil margin blowing parts 41 held in a vacuum vessel connected to the laminated vacuum vessel 33 via gate valves 43a and 43b, and 41 is a margin forming oil.
[0037]
In the present embodiment, the first organic material vapor deposition vessel 34a, the first sputtering target 38a, the first oil margin blowing portion 40a, the first oil margin blowing portion 40a, the first in order in the circumferential direction of the rotating body 32 with respect to the periphery of the laminated vacuum vessel 31. The second organic material vapor deposition vessel 34b, the second sputtering target 38b, and the second oil margin blowing portion 40b are arranged clockwise toward the paper surface. The index angle for the arrangement angle of each of the six units is 60 degrees. The first rotating body 32 repeats rotation and stop by 60 degrees counterclockwise toward the paper surface, and the organic material evaporation container 34a or 34b, then the oil margin blowing portion 40a or 40b, and then the sputtering target 38a. Alternatively, the respective film-forming surfaces are made to stand oppositely in order with 38b. By opening the first and second opening / closing plates in a state of being opposed to each other, the first and second organic material vapors are brought into contact with the two film formation surfaces forming the symmetry of the rotating body 32 and cooled, The second organic material dielectric thin film can be formed on two film formation surfaces that are symmetrical. At the same time, an electrode thin film made of aluminum can be formed on two film formation surfaces having different symmetry by turning on the sputtering power supplies 39a and 39b.
[0038]
At the same time, the oil margin blowing portions 40a and 40b and the blocking plates 43a and 43b for blocking the laminated vacuum container 31 are opened, and a margin portion made of oil can be formed on two symmetrical film forming surfaces.
While performing the above-described film forming operation, the rotating body 32 is rotated three times in one direction by 60 degrees.
[0039]
Next, the rotating body 32 is returned 180 degrees clockwise toward the paper surface. By repeating the above operation three times, the capacitor element plate 33 (A-1, A-2, A-3) in the range A shown in FIG. 4 is combined with the first organic material thin film and the aluminum electrode thin film. 3 layers can be formed continuously. In addition, in the capacitor element plate 33 (B-1, B-2, B-3) in the range B, three layers including a combination of the second organic material thin film and the aluminum electrode thin film can be continuously formed. After the above operation, the rotator 32 is rotated 180 degrees counterclockwise toward the paper surface, the A range and the B range relating to the target of the film formation surface are reversed, and the one-direction rotation stop by the indexing of 60 degrees is performed. Perform 180 degree return rotation. By repeating the above operation, simultaneous film formation processing can be performed on all film formation surfaces in the A range and the B range, and organic material dielectric thin films having different etching rates for every three layers can be manufactured with high productivity. .
[0040]
(Embodiment 6)
The film capacitor manufacturing apparatus according to the sixth embodiment of the present invention will be described with reference to FIG.
[0041]
In FIG. 5, 31 is a vacuum container for stacking that can be held under reduced pressure, 32 is a cylindrical rotating body having a film-forming plane in a direction perpendicular to the paper surface, 40 is an oil margin blowout part, 50 is an aluminum vapor deposition source, and 36 is dimethylol. An organic material liquid containing tricyclodecane diacrylate as a component, 51 is a resin container that is placed in the laminated vacuum container 31 and stores the organic material liquid 36 while cooling, and 52 is a SUS for thinly extending the organic material liquid 36. A belt 51, a roller 1 that rotates the belt 52, a transfer roller that pumps the organic material liquid 36 from the resin container 51 and transfers it to the belt 52, and a halogen that heats the surface of the belt 52 opposite to the resin-coated surface. Lamp heater, 56 is a controller for changing the heating output of the lamp heater, 57 is a blocking wall for containing organic material vapor, and 58 is an organic material. For controlling the evaporation pressure, a control valve that connects to an exhaust system (not shown). Reference numeral 59 denotes a resin vapor opening with respect to the surface of the rotating body 32.
[0042]
In this embodiment, the rotating body rotates clockwise at a predetermined speed toward the paper surface. For each rotation, an oil margin is formed on the surface of the rotator 32 from the oil margin blowing portion 40, and then a single layer of an electrode thin film having a width of about 400 mm is formed from the aluminum vapor deposition source 50, and then a resin vapor opening is formed. Resin vapor comes into contact with the surface of the rotator 32 from the portion 59 to form one organic material thin film. When the rotating body 32 is continuously rotated while maintaining the above state, a multilayer laminated body having a margin portion as a capacitor composed of an organic material thin film and a metal electrode thin film, that is, a wide capacitor element plate can be manufactured. The feature of this embodiment is that the setting of the heating controller 56 is changed every time the rotating body rotates three times, and the amount of heat radiation from the lamp heater 55 to the belt 52 is changed. As a result, the evaporation component of the organic material vapor evaporated from the surface of the belt 52 has a different molecular structure (molecular weight) every three rotations. For example, dimethylol tricyclodecane diacrylate begins to break bonds in the monomer component at about 180 ° C. Therefore, a SUS belt having a relatively thin thickness is used so that the thermal conductivity is maintained, and the amount of heat radiation from the lamp heater is instantaneously changed to change the evaporation temperature of the organic material liquid to 150 ° C. and 180 ° C. Repeatedly change every 3 rotations. By performing the above operation, an organic material dielectric thin film having a different etching rate for every three layers can be formed from one organic material evaporation element, so that a simple manufacturing apparatus can be obtained.
[0043]
(Embodiment 7)
A method for manufacturing a film capacitor according to a seventh embodiment of the present invention will be described with reference to FIGS.
[0044]
In FIG. 6, 8a is a first dielectric thin film containing dimethylol tricyclodecane diacrylate as a component, and 8b is phenoxyethyl acrylate.
[0045]
[Chemical Formula 3]
Figure 0004814408
[0046]
[Formula 4]
Figure 0004814408
[0047]
8c is a third dielectric thin film made of a mixture obtained by blending equal amounts of a laminate of dimethylol tricyclodecane diacrylate and phenoxyethyl acrylate.
[0048]
  FIG. 2 shows an oxygen plasma processing apparatus. In FIG. 2, 10 is a vacuum container capable of maintaining a reduced pressure, 11 is a quartz window, 12 is an electrode for applying a high frequency, 13 is a high frequency power source, and 14 is a mask made of aluminum. In this embodiment, first, a combination layer formed by forming one layer of the wide aluminum electrode 1a by vacuum deposition while forming the margin portion 3 on the surface of one layer of the wide first dielectric thin film 8a formed by vacuum deposition is performed twice. Next, the first dielectric thin film 8a having a wide width is formed on the surface formed by one layer by vacuum deposition.2One layer of the dielectric thin film 8b is formed by vacuum deposition, and then one layer of the wide aluminum electrode 1a is formed by vacuum deposition while forming the margin portion 3.
[0049]
  Next, the wide first2A combination layer formed by forming a single layer of the thin aluminum thin film 8b by vacuum deposition on the surface on which the dielectric thin film 8b is formed by vacuum deposition is formed twice in succession. Next, a wider first dielectric thin film 8a is formed on the surface on which one layer is formed by vacuum deposition.2The dielectric thin film 8b is formed in a single layer by vacuum deposition, and then a single combined layer is formed by forming the wide aluminum electrode 1a by vacuum deposition while forming the margin portion 3. Regardless of the type of dielectric thin film 8a, 8b, 8c, the margin portion is ½ of the upper and lower dielectric thin films between each pair of adjacent margin widths 4 for each layer.ZLaminate so as to slip. The above lamination process is repeated about 1000 times to form a combined layer of 3000 layers of dielectric thin film and electrode thin film. This wide laminate is cut at the center of a set of margin widths 4 to form the parent capacitor element shown in FIG. Next, with the oxygen plasma processing apparatus shown in FIG. 2, the end surface of the parent capacitor element 5 from which the electrode is to be drawn is brought into contact with the oxygen plasma, and the electrode drawing end surface side portion of the dielectric thin film 8a, 8b or 8c is The electrode 1a is exposed from the end face by selective removal with a small width. The oxygen plasma conditions are an oxygen gas flow rate of 60 Scm 3 / min, a pressure of 1.0 Torr, and a high frequency power of 400 W.
[0050]
Under this condition, the etching rate of the polymerized solid of dimethylol tricyclodecane diacrylate, which is the first dielectric thin film 8a, is about 1000 Å / min, and the phenoxyethyl acrylate, which is the second dielectric thin film 8b, is The dielectric thin films 8a and 8b having different chemical structures have different etching rates. As a result, the concave and convex surfaces of the dielectric layer are alternately formed with a dimension 9 every three layers on the electrode end surface, and the lead shape of the electrode 1a changes every three layers. For this reason, when the end face electrode 6 is formed by thermally spraying brass on the end face of the electrode, a good electrical connection is obtained between the end face electrode 6 and the electrode 1a, and the end face electrode 6 includes the electrode 1a and the dielectric 8a, A film capacitor having a high adhesion strength to 8b can be produced. Also in the case of the dielectric thin film 8c, a film capacitor having a high adhesion strength can be manufactured as in the case of 8b.
[0051]
(Embodiment 8)
A film capacitor manufacturing apparatus according to an eighth embodiment of the present invention will be described with reference to FIG.
[0052]
In FIG. 7, 31 is a vacuum container for stacking that can be held under reduced pressure, 32 is a cylindrical rotating body having a film formation plane perpendicular to the paper surface, 40 is an oil margin blowout part, 50 is an aluminum vapor deposition source, and 34a and 34b are First and second organic material vapor deposition containers 35a and 35b are first and second organic material vapor deposition crucibles housed in the first and second organic material vapor deposition containers, respectively, and 37a and 37b are the first and second organic material vapor deposition containers. First and second open / close plates that shut off the second organic material vapor deposition container and the stacking military air vessel 31, respectively, 36a is a first organic material liquid containing dimethylol tricyclodecanediacrylate as a component, and 36b is phenol. It is the 2nd organic-material liquid which uses a silethyl acrylate as a component.
[0053]
Reference numeral 60 denotes an encoder that measures the rotational position of the rotating body 32, and reference numeral 61 denotes an opening / closing controller that controls the opening / closing of the opening / closing plates 1 and 2 based on the number of rotations and the rotation angle of the rotating body 32. The first organic material liquid 36a is heated and vaporized in a first organic material deposition crucible 35a housed in a first organic material deposition vessel 34a connected to a vacuum exhaust system (not shown). The second organic material liquid 36b is heated and vaporized in a second organic material deposition crucible 35b housed in a second organic material deposition container 34b connected to a vacuum exhaust system (not shown).
[0054]
In the present embodiment, the rotating body rotates clockwise at a predetermined speed toward the paper surface. For each rotation, an oil margin is formed on the surface of the rotator 32 from the oil margin blowing portion 40, and then one layer of an electrode thin film having a wide width of about 400 mm is formed from the aluminum vapor deposition source 50. Here, by opening the first or second opening / closing plate, the first or second organic material vapor comes into contact with the film formation surface of the rotating body 32 and is cooled, so that the first or second organic material dielectric is provided. A thin film can be formed.
[0055]
The feature of the present apparatus that enables the above operation is that, first, the first opening / closing plate 37a is opened and the first organic material is vapor-deposited during the rotation of the rotating body 32 twice. Close and stop the deposition of the second organic material. During the next one rotation, the second opening / closing plate 37b is first opened and then fully opened, and then the first opening / closing plate 37a is closed. Next, while the rotating body 32 rotates twice, the second opening / closing plate 37b is opened to deposit the first organic material, and during this time, the first opening / closing plate 37a is closed to stop the deposition of the second organic material. . During the next one rotation, the first opening / closing plate 37a is first opened and then fully opened, and then the second opening / closing plate 37b is closed. In the above operation, the opening and closing timings of the first and second opening / closing plates are sent to the opening / closing controller 61 by the number of rotations detected by the encoder 60 and the rotation angle so as to always open and close at a predetermined position. This operation is alternately repeated every three times with respect to the number of rotations of the rotating body 32. As a result of the above operation, a wide multilayer capacitor element plate having a different etching rate for every three layers can be formed.
[0056]
(Embodiment 9)
A method for manufacturing a film capacitor according to the ninth embodiment of the present invention will be described with reference to FIGS.
[0057]
100a is a single-sided metallized film using a polyphenylene sulfide (PPS) film having a thickness of about 0.8 μm, 100b is a single-sided metallized film using a polyethylene naphthalate (PEN) film having a thickness of about 0.8 μm, and 1a is an electrode. An aluminum vapor deposition film, 3 is a margin portion, and 4 is a margin width. First, as shown in FIG. 8, each of the two layers of the wide single-sided metallized films 100a and 100b provided with a plurality of margin portions 3 so that a plurality of capacitor elements are formed alternately. Thus, a total of four films are wound at the same time. Regarding the superposition of the films, each layer is wound so that each of the pair of margin portions 3 adjacent to each other is overlapped with each other while being shifted by 1/2 with two films. The obtained wound product is cut at the center portion of one set of margin widths 4 to form a parent capacitor 5 shown in FIG. Next, the end surface of the parent capacitor 5 where the electrode is to be extracted is brought into contact with oxygen gas plasma or ozone gas, and the electrode extraction end surface side portion of the film 1 is chemically smaller than the margin width 4 as shown in FIG. The electrode 1a is selectively removed from the electrode 1a to expose the electrode 1a of the single-sided metallized film 1 from the end face, and each dielectric on the electrode lead-out end face is processed to be uneven. Thereafter, a metal mainly composed of brass is sprayed on the end face, and after forming the end face electrode 6 as shown in FIG. 10C, the parent capacitor 5 is cut in a direction perpendicular to the margin forming direction. A unit capacitor element is obtained. As a result, the convex and concave surfaces of the dielectric layer are alternately formed with a dimension 9 every two layers on the electrode end surface, and the lead-out shape of the electrode 1a changes every two layers. For this reason, when the end face electrode 6 is formed by thermally spraying brass on the end face of the electrode, a good electrical connection is obtained between the end face electrode 6 and the electrode 1a, and the end face electrode 6 includes the electrode 1a and the dielectric 8a, A film capacitor having strong adhesion strength to 8b can be manufactured.
[0058]
【The invention's effect】
As described above, according to the present invention, the following advantageous effects can be obtained.
According to the film capacitor manufacturing technique of the present invention, a plurality of electrodes, a dielectric made of at least one layer of organic material disposed between the electrodes, and the electrode lead-out end face are provided to each of the electrodes. And the end face of the dielectric is configured to recede from the electrode so as to form an uneven surface alternately in units of a plurality of layers of two or more layers. Therefore, even in an ultra-thin dielectric multilayer film capacitor with a dielectric thickness of 0.8 μm or less, high-quality lamination with good electrical contact between the electrode and the end face electrode and sufficient adhesion strength as the end face electrode Type film capacitor is obtained.
[0060]
  Claim1According to this film capacitor manufacturing method, the first dielectric thin film made of a wide organic material having a thickness of 0.8 μm or less is formed on one surface by vacuum deposition, and the wide metal electrode is formed on the surface by vacuum deposition. A step of continuously forming two or more combination layers of one, and a first organic thin film made of a wide organic material having the same chemical structural formula as the first dielectric thin film, a different viscosity, and a thickness of 0.8 μm or less. A step of continuously forming two or more second combination layers in which a wide layer of metal electrodes is formed in a single layer by vacuum deposition on a surface on which one dielectric thin film of two is formed by vacuum deposition; A step of alternately stacking a combination layer and two or more second combination layers by vacuum vapor deposition to form a multilayer body having a plurality of capacitor elements; and a step of cutting the multilayer body at an electrode leading end surface portion; , The electric The pole lead end face is brought into contact with a gas containing oxygen plasma or ozone, and the first electrode lead end face portion of the first dielectric thin film and the second electrode lead end face portion of the second dielectric thin film are uneven by etching. Forming a surface, and forming an end face electrode on the first electrode lead-out end surface portion and the second electrode lead-out end surface portion where the uneven surface is formed, so that the thickness of the dielectric is increased. For a multilayer film capacitor of 0.8 μm or less, there can be obtained a method of manufacturing a film capacitor that can sufficiently secure the unevenness of the dielectric film at the electrode lead end face.
[0061]
  Claim2as well as3According to the film capacitor manufacturing apparatus, a rotating body housed in a vacuum vessel, a metal thin film forming element disposed to face a rotating body surface parallel to a rotating shaft of the rotating body, and the rotating body A capacitor margin forming element disposed opposite to the surface of the rotating body parallel to the rotation axis, and a different organic material disposed opposite to the surface of the rotating body parallel to the rotation axis of the rotating body by inserting an opening / closing plate. In a film capacitor manufacturing apparatus having two or more organic material evaporation elements, the second opening / closing plate for the second organic material evaporation element is closed while the first opening / closing plate for the first organic material evaporation element is opened. While the second opening / closing plate is open, the first opening / closing plate is closed, and while the entire surface of the rotating body passes through the opposite face of the organic material evaporation element of the same kind twice, Only continuous Or a wide multilayer capacitor element plate having different etching rates at intervals of two or more layers with respect to a multilayer film capacitor having a dielectric thickness of 0.8 μm or less. As a result, when the electrode is exposed by contact with oxygen plasma at the end surface of the electrode lead-out, a film capacitor laminate manufacturing apparatus that can sufficiently secure the unevenness of the dielectric film is obtained.
[0062]
  Claim4According to the film capacitor manufacturing apparatus, a rotating body housed in a vacuum vessel and different organic materials arranged opposite to each other with an opening / closing plate inserted into a rotating body surface parallel to the rotating shaft of the rotating body Two or more organic material evaporating elements having the same number of metal thin film forming elements as the organic material evaporating elements arranged opposite to the surface of the rotating body parallel to the rotation axis of the rotating body, In the film capacitor manufacturing apparatus having the same number of capacitor margin forming elements as the organic material evaporating elements arranged facing the surface of the rotating body parallel to the rotation axis, the organic material evaporating element and the rotating direction of the rotating body The capacitor margin forming element and the metal thin film forming element are arranged one by one in order as a group, and the rotating body reciprocates twice or more in the angle range formed by the group. The multilayer film having a dielectric thickness of 0.8 μm or less is obtained by repeatedly rotating the reciprocating motion range to the next group, and opening and closing each of the opening and closing plates with respect to the organic material evaporation element at the same time. As a result of the ability to form a multilayer capacitor element plate having a wide etching rate at an interval of two or more layers with respect to the capacitor, when the electrode is exposed by contact with oxygen plasma at the electrode lead end surface, A film capacitor laminate manufacturing apparatus can be obtained in which the unevenness can be sufficiently secured and the productivity is excellent.
[0063]
  Claim5According to the film capacitor manufacturing apparatus, a rotating body housed in a vacuum vessel, a metal thin film forming element disposed to face a rotating body surface parallel to a rotating shaft of the rotating body, and the rotating body A capacitor margin forming element disposed facing the surface of the rotating body parallel to the rotation axis, and an organic material evaporation element disposed facing the surface of the rotating body parallel to the rotation axis of the rotating body.In the film capacitor manufacturing apparatus having the above, the organic material evaporation element,An evaporating plate that extends organic material thinly, and on the evaporating plate surfaceSaidMeans for supplying organic materials;SaidOrganic material heating means for radiatively heating the evaporation plate, thermal radiation amount control power supply, and the organic materialSteamA container surrounding the container, means for exhausting the container, and an exhaust regulating valve for controlling the pressure in the container.ShiEach time the rotating body rotates two or more times, the organic materialHeating meansBy repeatedly changing the amount of heat radiation to the evaporation plate and the pressure in the container, the molecular weight of the organic material is alternately changed every two rotations or more, so that the thickness of the dielectric is 0. For a film capacitor of .8 μm or less, a film capacitor that can ensure a sufficient amount of unevenness of the dielectric film when the electrode is exposed by contacting oxygen plasma at the end surface of the electrode lead is used as a single organic material evaporation source. A simple layered manufacturing apparatus can be obtained.
[0065]
  Claim6According to this film capacitor manufacturing apparatus, a rotating body housed in a vacuum vessel, a rotational position meter for determining the rotational position of the rotating body, and a rotating body that is parallel to the rotational axis of the rotating bodytableA metal thin film forming element disposed facing the surface, a capacitor margin forming element disposed facing the surface of the rotating body parallel to the rotation axis of the rotating body, and a rotating body parallel to the rotation axis of the rotating body In a film capacitor manufacturing apparatus having two or more organic material evaporating elements having different organic materials arranged opposite to each other by inserting an opening / closing plate interlocked with the rotational position meter with respect to the surface, the rotating body is continuously rotated. However, the state where the first opening / closing plate for the organic material evaporation element is opened and the second opening / closing plate is closed, the state where the first opening / closing plate is opened and the second opening / closing plate is opened, and the first opening / closing plate is closed. The state where the second opening / closing plate is opened is alternately repeated in conjunction with the rotational position meter, and while the entire surface of the rotating body passes the opposite surface of the organic material evaporation element of the same kind twice, the opening / closing plate Only one of the is open continuously With respect to a multilayer film capacitor having a dielectric thickness of 0.8 μm or less, the unevenness of the dielectric film is sufficient when the electrode is exposed to contact with oxygen plasma at the end surface of the electrode lead-out. Thus, it is possible to obtain a highly productive layered manufacturing apparatus capable of stacking film capacitors that can be secured in a continuous manner while rotating the rotating body continuously.
[0066]
According to the method for manufacturing a film capacitor of the present invention described above, a step of winding a wide single-sided metallized film having a plurality of capacitor elements into a laminate, and the laminate obtained in the step is drawn into an electrode. Cutting the end surface portion, bringing the electrode leading end surface into contact with a gas containing oxygen plasma or ozone, and retracting the electrode leading end surface portion of the dielectric thin film from the electrode; and In the film capacitor manufacturing method including the step of forming an end face electrode, the winding of the first single-sided metallized film that is continuous for two or more layers, the etching rate is different from that of the first single-sided metallized film, and the two or more layers are continuous By winding the second single-sided metallized film simultaneously to form a laminate, the thickness of the dielectric is reduced. Also in the film capacitor formed by laminating a single-sided metallized film follows .8Myuemu, method for producing a film capacitor uneven amount can be sufficiently secured in the dielectric film at the electrode lead-out end face is obtained.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing the structure of a film capacitor according to first to third embodiments of the present invention.
FIG. 2 is a cross-sectional view of a plasma processing apparatus used in the second, third, seventh and ninth embodiments of the present invention.
FIG. 3 is a sectional view of a film capacitor manufacturing apparatus used in a fourth embodiment of the present invention.
FIG. 4 is a cross-sectional view of a film capacitor manufacturing apparatus used in a fifth embodiment of the present invention.
FIG. 5 is a cross-sectional view of a film capacitor manufacturing apparatus used in a sixth embodiment of the present invention.
FIG. 6 is a cross-sectional view showing a method for manufacturing a film capacitor used in a seventh embodiment of the present invention.
FIG. 7 is a cross-sectional view of a film capacitor manufacturing apparatus used in an eighth embodiment of the present invention.
FIG. 8 is a perspective view showing a method of manufacturing a film capacitor used in the ninth embodiment of the present invention.
FIG. 9 is a perspective view showing a conventional film capacitor manufacturing method.
FIG. 10 is a cross-sectional view showing a conventional method of manufacturing a film capacitor
[Explanation of symbols]
8a First dielectric thin film
8b Second dielectric thin film
8c Third dielectric thin film
13 High frequency power supply
31 Stacked vacuum container
32 Rotating body
33 Condenser element plate
34a First organic material evaporation vessel
34b Second organic material evaporation vessel
36a First organic material liquid
36b Second organic material liquid
37a First opening / closing plate
37b Second opening / closing plate
38 Sputter target
40 Oil margin outlet
50 Aluminum deposition part
52 belt
55 Lamp heater
56 Heating output controller
60 Encoder
61 Opening and closing plate controller
100a 1st single-sided metallized film
100b Second single-sided metallized film

Claims (6)

厚みが０．８μｍ以下の広幅の有機材料からなる第１の誘電体薄膜を真空蒸着により一層形成した表面に広幅の金属電極を真空蒸着により一層形成した第１の組合せ層を２層以上連続して形成する工程と、前記第１の誘電体薄膜に対し化学構造式が同じで粘度が異なり、かつ厚みが０．８μｍ以下の広幅の有機材料からなる第２の誘電体薄膜を真空蒸着により一層形成した表面に広幅の金属電極を真空蒸着により一層形成した第２の組合せ層を２層以上連続して形成する工程と、２層以上の前記第１の組合せ層と２層以上の前記第２の組合せ層を真空蒸着により交互に積層して、複数のコンデンサ要素を有する積層体を形成する工程と、前記積層体を電極引き出し端面部分で切断する工程と、前記電極引き出し端面を酸素プラズマ又はオゾンを含むガスに接触させて前記第１の誘電体薄膜の第１の電極引き出し端面部分および前記第２の誘電体薄膜の第２の電極引き出し端面部分にエッチングにより凸凹面を形成する工程と、前記凸凹面が形成された前記第１の電極引き出し端面部分および前記第２の電極引き出し端面部分に端面電極を形成する工程と、を有するフィルムコンデンサの製造方法。Two or more first combination layers each having a wide metal electrode formed by vacuum deposition on the surface of the first dielectric thin film made of a wide organic material having a thickness of 0.8 μm or less by vacuum deposition are continuously formed. Forming a second dielectric thin film made of a wide organic material having the same chemical structural formula and different viscosity with respect to the first dielectric thin film and having a thickness of 0.8 μm or less by vacuum deposition. A step of continuously forming two or more second combination layers formed by vacuum deposition of a wide metal electrode on the formed surface, two or more first combination layers, and two or more second layers. Are alternately laminated by vacuum deposition to form a laminated body having a plurality of capacitor elements, a step of cutting the laminated body at an electrode lead end face portion, and the electrode lead end face to oxygen plasma or ozone. The Forming a concave / convex surface by etching on the first electrode leading end surface portion of the first dielectric thin film and the second electrode leading end surface portion of the second dielectric thin film in contact with a gas containing the first dielectric thin film; Forming a facet electrode on the first electrode lead-out end face part and the second electrode lead-out end face part having a surface formed thereon. 真空容器内に収納された回転体と、前記回転体の回転軸と平行をなす回転体表面に対向して配置する金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置するコンデンサマージン形成要素と、前記回転体の回転軸と平行をなす回転体表面に対し開閉板を挿んで対向して配置した異なる有機材料を有する有機材料蒸発要素を２個以上有するフィルムコンデンサ製造装置において、第１の有機材料蒸発要素に対する第１の開閉板を開いている間は、第２の有機材料蒸発要素に対する第２の開閉板を閉め、且つ、第２の開閉板を開いている間は、第１の開閉板を閉め、前記回転体表面の全面が前記同種の有機材料蒸発要素の対面を２回通過する間は、前記開閉板の一方のみの連続的もしくは断続的な開動作とすることを特徴とするフィルムコンデンサ製造装置。A rotating body housed in a vacuum vessel, a metal thin film forming element disposed to face the rotating body surface parallel to the rotating shaft of the rotating body, and a rotating body surface parallel to the rotating shaft of the rotating body. Capacitor margin forming elements arranged opposite to each other, and two or more organic material evaporation elements having different organic materials arranged opposite to each other by inserting an opening / closing plate on the surface of the rotating body parallel to the rotation axis of the rotating body In the film capacitor manufacturing apparatus, while the first opening / closing plate for the first organic material evaporation element is open, the second opening / closing plate for the second organic material evaporation element is closed, and the second opening / closing plate is The first opening / closing plate is closed while it is open, and only one of the opening / closing plates is continuous or intermittent while the entire surface of the rotating body passes the opposite surface of the organic material evaporation element of the same kind twice. To make it open Film capacitor manufacturing apparatus according to symptoms. 回転体の回転動作中は、有機材料蒸発要素に対する開閉板を閉状態にすることを特徴とする請求項２に記載のフィルムコンデンサ製造装置。3. The film capacitor manufacturing apparatus according to claim 2, wherein the opening / closing plate for the organic material evaporation element is closed during the rotating operation of the rotating body. 真空容器内に収納された回転体と、前記回転体の回転軸と平行をなす回転体表面に対し開閉板を挿んで対向して配置した、異なる有機材料を有する２個以上の有機材料蒸発要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置した前記有機材料蒸発要素と同個数の金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置した前記有機材料蒸発要素と同個数のコンデンサマージン形成要素を有するフィルムコンデンサ製造装置において、前記回転体の回転方向に対し前記有機材料蒸発要素と前記コンデンサマージン形成要素と前記金属薄膜形成要素を１個ずつ順番に１つの群として配置し、前記回転体が前記群により形成される角度範囲を２回以上往復した後、次の群に往復運動範囲を回転移動することを繰り返し、前記有機材料蒸発要素に対する各前記開閉板は同時に開くことを特徴とするフィルムコンデンサ製造装置。Two or more organic material evaporation elements having different organic materials, which are disposed opposite to each other, with a rotating body housed in a vacuum vessel and a rotating body surface parallel to the rotation axis of the rotating body, with an opening / closing plate inserted A metal thin film forming element having the same number as the organic material evaporation element disposed opposite to the rotating body surface parallel to the rotating shaft of the rotating body, and a rotating body surface parallel to the rotating shaft of the rotating body. In the film capacitor manufacturing apparatus having the same number of capacitor margin forming elements as the organic material evaporation elements arranged to face each other, the organic material evaporation element, the capacitor margin forming element, and the metal thin film formation with respect to the rotation direction of the rotating body The elements are arranged one by one in order as a group, and after the rotary body reciprocates twice or more the angle range formed by the group, the reciprocating range is rotated and moved to the next group. Repeating, each said shutter plate is a film capacitor manufacturing apparatus characterized by open simultaneously to said organic material evaporation element. 真空容器内に収納された回転体と、前記回転体の回転軸と平行をなす回転体表面に対向して配置する金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置するコンデンサマージン形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置した有機材料蒸発要素とを有するフィルムコンデンサ製造装置において、前記有機材料蒸発要素は、有機材料を薄く伸展する蒸発板と、前記蒸発板表面に前記有機材料を供給する手段と、前記蒸発板を輻射加熱する有機材料加熱手段と、熱輻射量制御電源と、前記有機材料の蒸気を囲む容器と、前記容器を排気する手段と、前記容器内圧力を制御する排気調整弁とを有し、前記回転体が２回転以上回転する毎に、前記有機材料加熱手段の前記蒸発板への熱輻射量と前記容器内圧力を変化させることを繰り返し、前記有機材料の分子量を２回転以上毎に交互に変化させることを特徴とするフィルムコンデンサ製造装置。A rotating body housed in a vacuum vessel, a metal thin film forming element disposed to face the rotating body surface parallel to the rotating shaft of the rotating body, and a rotating body surface parallel to the rotating shaft of the rotating body. In a film capacitor manufacturing apparatus having a capacitor margin forming element disposed to face and an organic material evaporation element disposed to face a rotating body surface parallel to the rotation axis of the rotating body, the organic material evaporation element comprises: An evaporating plate for extending the organic material thinly; means for supplying the organic material to the surface of the evaporating plate; organic material heating means for radiatively heating the evaporating plate; a heat radiation amount control power supply; and vapor of the organic material. A surrounding container, a means for exhausting the container, and an exhaust regulating valve for controlling the pressure in the container, and each time the rotating body rotates two or more times, the organic material heating means is applied to the evaporation plate. Thermal radiation Repeatedly changing the container pressure, film capacitor manufacturing apparatus characterized by varying alternately molecular weight for every two or more rotations of the organic material. 真空容器内に収納された回転体と、前記回転体の回転位置を割り出す回転位置計と、前記回転体の回転軸と平行をなす回転体表面に対向して配置する金属薄膜形成要素と、前記回転体の回転軸と平行をなす回転体表面に対向して配置するコンデンサマージン形成要素と、前記回転体の回転軸と平行をなす回転体表面に対し、前記回転位置計と連動した開閉板を挿んで対向して配置した異なる有機材料を有する有機材料蒸発要素を２個以上有するフィルムコンデンサ製造装置において、前記回転体を連続して回転させながら、有機材料蒸発要素に対する第１の開閉板を開き第２の開閉板を閉めた状態と、第１の開閉板を開き第２の開閉板を開いた状態と、第１の開閉板を閉め第２の開閉板を開く状態とを、前記回転位置計と連動して交互に繰り返し、前記回転体表面の全面が前記同種の有機材料蒸発要素の対面を２回通過する間は、前記開閉板の一方のみが連続的に開くことを特徴とするフィルムコンデンサ製造装置。A rotating body housed in a vacuum vessel, a rotational position meter for determining a rotational position of the rotating body, a metal thin film forming element disposed to face a rotating body surface parallel to the rotational axis of the rotating body, A capacitor margin forming element disposed opposite to the rotating body surface parallel to the rotating shaft of the rotating body, and an opening / closing plate linked to the rotating position meter on the rotating body surface parallel to the rotating shaft of the rotating body. In a film capacitor manufacturing apparatus having two or more organic material evaporating elements having different organic materials inserted and opposed to each other, the first opening / closing plate for the organic material evaporating element is opened while continuously rotating the rotating body. The rotational position includes a state where the second opening / closing plate is closed, a state where the first opening / closing plate is opened and the second opening / closing plate is opened, and a state where the first opening / closing plate is closed and the second opening / closing plate is opened. Alternately with the meter And, wherein during the entire rotating surface passes facing the two organic material evaporation element of the same type, film capacitor manufacturing apparatus characterized by only one of the closing plate is opened continuously.
JP29842798A 1998-10-20 1998-10-20 Film capacitor manufacturing method and apparatus Expired - Fee Related JP4814408B2 (en)

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