JP4805251B2 - ガスクラスターイオンビームの改良された処理方法および装置 - Google Patents

ガスクラスターイオンビームの改良された処理方法および装置 Download PDF

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Publication number
JP4805251B2
JP4805251B2 JP2007504128A JP2007504128A JP4805251B2 JP 4805251 B2 JP4805251 B2 JP 4805251B2 JP 2007504128 A JP2007504128 A JP 2007504128A JP 2007504128 A JP2007504128 A JP 2007504128A JP 4805251 B2 JP4805251 B2 JP 4805251B2
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Prior art keywords
pressure
gas cluster
ion beam
cluster ion
gas
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JP2007504128A
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Japanese (ja)
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JP2007529876A (ja
JP2007529876A5 (enExample
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スウェンソン，デービッド，アール．
ハウタラ，ジョン，ジェイ．
グウィン，マシュー，シー．
マック，ミカエル，イー．
タバト，マーチン，イー．
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ティーイーエル エピオン インク．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/026—Cluster ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2007504128A 2004-03-19 2005-03-18 ガスクラスターイオンビームの改良された処理方法および装置 Expired - Lifetime JP4805251B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US55481204P 2004-03-19 2004-03-19
US60/554,812 2004-03-19
PCT/US2005/008983 WO2005091990A2 (en) 2004-03-19 2005-03-18 Method and apparatus for improved processing with a gas-cluster ion beam

Publications (3)

Publication Number Publication Date
JP2007529876A JP2007529876A (ja) 2007-10-25
JP2007529876A5 JP2007529876A5 (enExample) 2011-07-07
JP4805251B2 true JP4805251B2 (ja) 2011-11-02

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JP2007504128A Expired - Lifetime JP4805251B2 (ja) 2004-03-19 2005-03-18 ガスクラスターイオンビームの改良された処理方法および装置

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Country Link
US (1) US7060989B2 (enExample)
EP (1) EP1738388A4 (enExample)
JP (1) JP4805251B2 (enExample)
WO (1) WO2005091990A2 (enExample)

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US7905199B2 (en) * 2008-06-24 2011-03-15 Tel Epion Inc. Method and system for directional growth using a gas cluster ion beam
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US20100193898A1 (en) * 2009-02-04 2010-08-05 Tel Epion Inc. Method for forming trench isolation using gas cluster ion beam processing
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US8981322B2 (en) 2009-02-04 2015-03-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam system
US20100200774A1 (en) * 2009-02-09 2010-08-12 Tel Epion Inc. Multi-sequence film deposition and growth using gas cluster ion beam processing
US7968422B2 (en) * 2009-02-09 2011-06-28 Tel Epion Inc. Method for forming trench isolation using a gas cluster ion beam growth process
US8455060B2 (en) * 2009-02-19 2013-06-04 Tel Epion Inc. Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam
US7947582B2 (en) 2009-02-27 2011-05-24 Tel Epion Inc. Material infusion in a trap layer structure using gas cluster ion beam processing
US8226835B2 (en) * 2009-03-06 2012-07-24 Tel Epion Inc. Ultra-thin film formation using gas cluster ion beam processing
US8877299B2 (en) * 2009-03-31 2014-11-04 Tel Epion Inc. Method for enhancing a substrate using gas cluster ion beam processing
US7982196B2 (en) * 2009-03-31 2011-07-19 Tel Epion Inc. Method for modifying a material layer using gas cluster ion beam processing
US8237136B2 (en) * 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
US20110084214A1 (en) * 2009-10-08 2011-04-14 Tel Epion Inc. Gas cluster ion beam processing method for preparing an isolation layer in non-planar gate structures
US8048788B2 (en) * 2009-10-08 2011-11-01 Tel Epion Inc. Method for treating non-planar structures using gas cluster ion beam processing
US8187971B2 (en) 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
US8992785B2 (en) * 2010-01-15 2015-03-31 Tel Epion Inc. Method for modifying an etch rate of a material layer using energetic charged particles
US8338806B2 (en) 2010-05-05 2012-12-25 Tel Epion Inc. Gas cluster ion beam system with rapid gas switching apparatus
US8173980B2 (en) 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
US8481340B2 (en) 2010-06-16 2013-07-09 Tel Epion Inc. Method for preparing a light-emitting device using gas cluster ion beam processing
US20170303383A1 (en) * 2010-08-23 2017-10-19 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US9799488B2 (en) * 2010-08-23 2017-10-24 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
EP2608872B1 (en) * 2010-08-23 2019-07-31 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
WO2014130979A1 (en) * 2013-02-25 2014-08-28 Exogenesis Corporation Defect reduction in a substrate treatment method
US10202684B2 (en) * 2010-08-23 2019-02-12 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US11199769B2 (en) 2010-08-23 2021-12-14 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
US10825685B2 (en) 2010-08-23 2020-11-03 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US10670960B2 (en) * 2010-08-23 2020-06-02 Exogenesis Corporation Enhanced high aspect ratio etch performance using accelerated neutral beams derived from gas-cluster ion beams
US8440578B2 (en) 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
US10627352B2 (en) 2011-08-22 2020-04-21 Exogenesis Corporation Methods and apparatus for employing an accelerated neutral beam for improved surface analysis
JP2014525817A (ja) 2011-08-22 2014-10-02 エクソジェネシス コーポレーション 物体表面の生物活性特徴の向上方法ならびにそれにより向上された表面
US8512586B2 (en) * 2011-09-01 2013-08-20 Tel Epion Inc. Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
US8557710B2 (en) 2011-09-01 2013-10-15 Tel Epion Inc. Gas cluster ion beam etching process for metal-containing materials
US8513138B2 (en) 2011-09-01 2013-08-20 Tel Epion Inc. Gas cluster ion beam etching process for Si-containing and Ge-containing materials
US9117628B2 (en) 2011-10-26 2015-08-25 Exogenesis Corporation Diagnostic method and apparatus for characterization of a neutral beam and for process control therewith
US8728947B2 (en) 2012-06-08 2014-05-20 Tel Epion Inc. Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
US8722542B2 (en) 2012-06-08 2014-05-13 Tel Epion Inc. Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
US9209033B2 (en) 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
US9105443B2 (en) 2013-11-20 2015-08-11 Tel Epion Inc. Multi-step location specific process for substrate edge profile correction for GCIB system
CN105917438B (zh) * 2013-11-22 2018-04-24 Tel 艾派恩有限公司 分子束增强gcib处理
US9123505B1 (en) 2014-02-21 2015-09-01 Tel Epion Inc. Apparatus and methods for implementing predicted systematic error correction in location specific processing
US9540725B2 (en) 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
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TWI600052B (zh) * 2015-03-04 2017-09-21 國立中興大學 離子聚集構件及質譜儀
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
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Also Published As

Publication number Publication date
JP2007529876A (ja) 2007-10-25
WO2005091990A2 (en) 2005-10-06
WO2005091990A3 (en) 2006-03-16
EP1738388A2 (en) 2007-01-03
US20050205802A1 (en) 2005-09-22
US7060989B2 (en) 2006-06-13
EP1738388A4 (en) 2009-07-08

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