JP4801103B2 - Plasma generator - Google Patents

Plasma generator Download PDF

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JP4801103B2
JP4801103B2 JP2008023801A JP2008023801A JP4801103B2 JP 4801103 B2 JP4801103 B2 JP 4801103B2 JP 2008023801 A JP2008023801 A JP 2008023801A JP 2008023801 A JP2008023801 A JP 2008023801A JP 4801103 B2 JP4801103 B2 JP 4801103B2
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plasma
electrode
workpiece
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outer housing
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JP2008192618A (en
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サン ロ リー
セオン シル イム
ユン ファン キム
ウー チョル チョイ
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エスイー プラズマ インク
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Description

本発明は大気圧プラズマ発生装置に係り、より詳しくは下部電極の一部領域を外部に突出させてプラズマ排出口を形成し、下部電極の下面を外部から遮断させる外部ハウジングを備えることで、局所範囲に対するプラズマ加工が行われる場合、被加工物の加工部位以外の部分に損傷を与えることを防止することができ、プラズマ排出口と外部ハウジングとの間に吸入口を形成することで、プラズマ加工の際に発生する微細物質を効果的に除去することができる、突出したプラズマ排出口の周囲に吸入口が形成された大気圧プラズマ発生装置に関するものである。 The present invention relates to an atmospheric pressure plasma generator, and more specifically, by providing an external housing that projects a partial region of a lower electrode to the outside to form a plasma discharge port and blocks the lower surface of the lower electrode from the outside. If plasma processing to the scope is performed, by forming the suction inlet between it it is possible to prevent damage to portions other than the machining area of the workpiece, the plasma outlet port and the outer housing, a plasma processing The present invention relates to an atmospheric pressure plasma generator in which a suction port is formed around a protruding plasma discharge port, which can effectively remove fine substances generated at the time.

ＦＰＤ（Ｆｌａｔ Ｐａｎｅｌ Ｄｉｓｐｌａｙ）のようなディスプレイ素子などの半導体素子を製造する工程において、洗浄、表面改質、アッシング（ａｓｈｉｎｇ）、食刻などの表面処理過程が必要である。このように、被加工物を表面処理する初期の方法としては、主に化学的方法が用いられているが、化学物質による表面処理は、廃棄物、流出物などが生成する問題があるため、次第に物理的方法を用いる表面処理を考慮する方向に研究が進んでいく。   In a process of manufacturing a semiconductor device such as a display device such as an FPD (Flat Panel Display), a surface treatment process such as cleaning, surface modification, ashing, or etching is required. Thus, as an initial method for surface treatment of a workpiece, a chemical method is mainly used, but surface treatment with a chemical substance has a problem of generating waste, effluent, etc. Research progresses in the direction of considering surface treatment using physical methods.

物理的表面処理方法として最近に注目されている方法はプラズマを用いる方法であり、産業現場においても、過去の化学的表面処理方法から次第にプラズマを用いる方式に半導体の表面処理工程を取り替えている。   Recently, a method that uses plasma as a physical surface treatment method is a method that uses plasma, and even in the industrial field, the surface treatment process of a semiconductor is gradually replaced with a method that uses plasma gradually from a past chemical surface treatment method.

プラズマと言うのは、ある気体がエネルギーによってイオン化してイオンと電子がほぼ同じ密度で均一に分布して全体的に電気的中性を示す荷電粒子の集団を意味する。気体に臨界値以上の外部エネルギーを印加すれば、気体はイオンと電子に電離（ｉｏｎｉｚａｔｉｏｎ）しながらプラズマを形成することになる。プラズマ状態の高エネルギーを有する粒子がある材料の表面に衝突すれば、そのエネルギーが衝突材料の表面に伝達されて表面処理がなされる。   The term “plasma” refers to a group of charged particles that are ionized by energy, and ions and electrons are uniformly distributed at substantially the same density to show electric neutrality as a whole. If an external energy exceeding the critical value is applied to the gas, the gas will ionize ions and electrons to form plasma. If particles having high energy in a plasma state collide with the surface of a certain material, the energy is transmitted to the surface of the colliding material and surface treatment is performed.

現在、ディスプレイ素子の開発にプラズマを活用する工程が次第に増加しており、主に真空プラズマ発生装置が使用されている。真空プラズマ発生装置は、表面処理を精密に制御することができる利点がある一方、装備の価格が高くて時間が多くかかるという欠点がある。よって、真空を維持しないでプラズマを発生させることができる大気圧プラズマ発生装置を活用するための研究が活発に進んでおり、産業現場においても真空プラズマ発生装置を大気圧プラズマ発生装置で取り替えていく実情である。現在研究、もしくは使用されている大気圧プラズマの種類としては、コロナ放電、誘電体バリア放電（ｄｉｅｌｅｃｔｒｉｃ ｂａｒｒｉｅｒ ｄｉｓｃｈａｒｇｅ、ＤＢＤ）、大気圧ＲＦ蓄電結合放電などがある。 Currently, the process of utilizing plasma for the development of display elements is gradually increasing, and vacuum plasma generators are mainly used. The vacuum plasma generator has the advantage that the surface treatment can be precisely controlled, but has the disadvantage that the equipment is expensive and time consuming. Therefore, research for utilizing an atmospheric pressure plasma generator capable of generating plasma without maintaining a vacuum is actively progressing, and the vacuum plasma generator is being replaced with an atmospheric pressure plasma generator even in the industrial field. It is a fact. The types of atmospheric pressure plasma currently studied or used include corona discharge, dielectric barrier discharge (DBD), and atmospheric pressure RF storage coupled discharge.

図１は従来の大気圧プラズマ発生装置を示す図である。
図１に示すように、被加工物１の局所領域に対してアッシングまたは食刻などのプラズマ加工が行われる場合、プラズマ発生装置によって発生して垂直方向に噴出されるプラズマが加工領域以外の周辺領域にも広がることになる。よって、局所的なプラズマ加工が必要であるにもかかわらず、被加工物の加工領域が（図に符号３で示す）不要に拡張して精密な加工を達成しにくい問題点があった。 FIG. 1 is a view showing a conventional atmospheric pressure plasma generator.
As shown in FIG. 1, when plasma processing such as ashing or etching is performed on a local region of the workpiece 1, the plasma generated by the plasma generator and ejected in the vertical direction is around the region other than the processing region. It will spread to the area. Therefore, there has been a problem that it is difficult to achieve precise machining by unnecessarily expanding the machining area of the workpiece (indicated by reference numeral 3 in the figure) even though local plasma machining is required.

また、プラズマ発生装置の下部電極で発生する熱２が被加工物にすぐ影響を及ぼすので、被加工物の表面に劣化現象が発生する問題点があった。   Moreover, since the heat 2 generated at the lower electrode of the plasma generator immediately affects the workpiece, there is a problem that a deterioration phenomenon occurs on the surface of the workpiece.

その外に、プラズマ発生の際に生じるラジカル物質、ガス及び各種の微細物質に被加工物の表面がそのまま露出してその表面が汚染される問題点もあった。 In addition, there is a problem that the surface of the workpiece is exposed as it is to the radical substance, gas, and various fine substances generated when the plasma is generated, and the surface is contaminated.

したがって、本発明は前記問題点を解決するためになされたもので、本発明の目的は、下部電極で発生する熱を外部ハウジングによって遮断することで、被加工物の表面の損傷を防止し、下部電極の一部を突出させることで、プラズマが被加工物の表面に広がる現象を防止し、プラズマ処理が行われるところに隣接して排気をなして、プラズマ処理の際に発生する微細物質を即時除去する、突出したプラズマ排出口の周囲に吸入口が形成されたプラズマ発生装置を提供することにある。 Therefore, the present invention was made to solve the above problems, and the object of the present invention is to prevent the surface of the workpiece from being damaged by blocking the heat generated in the lower electrode by the outer housing, By projecting a part of the lower electrode, the phenomenon that the plasma spreads on the surface of the workpiece is prevented, and exhaust is made adjacent to the place where the plasma treatment is performed, so that fine substances generated during the plasma treatment can be removed. It is an object of the present invention to provide a plasma generating apparatus in which a suction port is formed around a protruding plasma discharge port that is immediately removed.

前記のような目的を達成するための本発明のプラズマ発生装置は、電源放電電圧が印加される第１電極、及び前記第１電極に付着されるかまたは第１電極を取り囲む形態の誘電体でなる第１電極部、前記第１電極部から所定間隔離隔して設置され、前記第１電極部と対向する面の反対側の面から突出するように伸びるプラズマ排出口を有する第２電極、及び前記プラズマ排出口の周辺を開放しつつ、前記第１電極部及び第２電極の周囲を取り囲む外部ハウジング、を含み、前記外部ハウジングとプラズマ排出口との間の間隙でもって、微細物質を吸い込む吸入口を形成することを特徴とする。 In order to achieve the above object, a plasma generator of the present invention includes a first electrode to which a power discharge voltage is applied, and a dielectric that is attached to or surrounds the first electrode. A second electrode having a plasma discharge port installed to be spaced apart from the first electrode portion by a predetermined distance and extending so as to protrude from a surface opposite to the surface facing the first electrode portion; An external housing surrounding the periphery of the first electrode portion and the second electrode while opening the periphery of the plasma discharge port, and sucking in a fine substance through a gap between the external housing and the plasma discharge port It is characterized by forming a mouth.

好ましくは、前記プラズマ排出口は、スリット状であることができる。   Preferably, the plasma discharge port may have a slit shape.

好ましくは、前記プラズマ排出口は、ホール状であることができる。   Preferably, the plasma discharge port may have a hole shape.

本発明は、前記吸入口を通じて微細物質を吸いこむダンパー、及び前記微細物質を前記外部ハウジングの外部に排出する排気口をさらに含むことができる。   The present invention may further include a damper that sucks the fine material through the suction port, and an exhaust port that discharges the fine material to the outside of the outer housing.

本発明は、前記外部ハウジングに冷却部をさらに設けることができる。 The present invention may further include a cold却部to the external housing.

以上説明したように、本発明による突出したプラズマ排出口の周囲に吸入口が形成された大気圧プラズマ発生装置によれば、下部電極によって発生する熱が外部ハウジングによって遮断されるので、被加工物の表面が損傷することを防止することができ、下部電極の一部を突出させることで、プラズマが被加工物の表面に広がる現象を防止することができる効果がある。   As described above, according to the atmospheric pressure plasma generator having the suction port formed around the protruding plasma discharge port according to the present invention, the heat generated by the lower electrode is blocked by the outer housing, so that the workpiece is processed. It is possible to prevent the surface of the substrate from being damaged, and by projecting a part of the lower electrode, it is possible to prevent the phenomenon that the plasma spreads on the surface of the workpiece.

また、プラズマ処理が行われるところに隣接して排気がなされるので、プラズマ処理の際に発生する微細物質を発生即時除去することができる効果もある。 Further, since the exhaust is performed adjacent to the place where the plasma processing is performed, there is an effect that the fine substances generated during the plasma processing can be generated and removed immediately.

以下、本発明の突出したプラズマ排出口の周囲に吸入口が形成されたプラズマ発生装置を大気圧プラズマ発生装置に適用する場合を例として、添付図面に基づいて詳細に説明する。   Hereinafter, an example in which a plasma generator having an inlet formed around a protruding plasma outlet according to the present invention is applied to an atmospheric pressure plasma generator will be described in detail with reference to the accompanying drawings.

図２は本発明の一実施例による突出したプラズマ排出口の周囲に吸入口が形成された大気圧プラズマ発生装置の構造を示す図である。   FIG. 2 is a view showing the structure of an atmospheric pressure plasma generator having a suction port formed around a protruding plasma discharge port according to an embodiment of the present invention.

図２に示すように、本発明の突出したプラズマ排出口の周囲に吸入口が形成された大気圧プラズマ発生装置は、大別して第１電極１０、誘電体３０、第２電極２０、第２電極２０の一部が突出して形成されたプラズマ排出口４０、外部ハウジング５０、吸入口６０、ダンパー７０、排気口８０、及び冷却部９０で構成される。 As shown in FIG. 2, the atmospheric pressure plasma generator having an inlet formed around the protruding plasma outlet of the present invention is roughly divided into a first electrode 10, a dielectric 30, a second electrode 20, and a second electrode. 20 includes a plasma discharge port 40, a housing 50, a suction port 60, a damper 70, an exhaust port 80, and a cooling unit 90.

第１電極１０は誘電体３０の上面に付着され、電源放電電圧が印加される。   The first electrode 10 is attached to the upper surface of the dielectric 30 and a power discharge voltage is applied.

第２電極２０は誘電体３０の下側に誘電体から所定間隔で離隔して設置され、第２電極の中心部の一部が下方に伸びてプラズマ排出口４０を形成する。前記のような電極構造物は電極ハウジングで取り囲まれており、この電極ハウジングの外壁には冷却部９０−１が設置される。そして、プラズマ排出口４０の下側には、アッシングまたは食刻などのプラズマ加工対象になる被加工物が置かれることになる。この際、アッシングまたは食刻加工に使用されるガスとしては、一般にプラズマ放電の容易性または均一性のためのＡｒ、Ｈｅ、Ｎ2などと反応性ガスであるＳＦ6、ＣＦ4、ＣＨＦ3、Ａｉｒ、Ｏ2などのガスが使用でき、その外に工程特性上必要なガスの適用も可能である。例として、アッシングまたは食刻の際に発生する下部膜に対する選択性を考慮して混合するガスとして、ＨＣｌ、Ｃｌ2などがある。 The second electrode 20 is installed on the lower side of the dielectric 30 at a predetermined distance from the dielectric, and a part of the center of the second electrode extends downward to form the plasma discharge port 40. The electrode structure as described above is surrounded by an electrode housing, and a cooling unit 90-1 is installed on the outer wall of the electrode housing. A workpiece to be processed by plasma processing such as ashing or etching is placed below the plasma discharge port 40. At this time, as gas used for ashing or etching, generally, Ar, He, N 2 or the like for the ease or uniformity of plasma discharge and reactive gases such as SF 6 , CF 4 , CHF 3 , A gas such as Air or O 2 can be used, and in addition, a gas necessary for process characteristics can be applied. For example, as a gas to be mixed in consideration of selectivity with respect to the lower film generated during ashing or etching, there are HCl, Cl 2 and the like.

このように、プラズマ排出口４０を形成することで、第１電極１０と第２電極２０との間に放電電圧が印加され、誘電体３０と第２電極２０との間に生成するプラズマはプラズマ排出口４０を通じて下方に排出される。すなわち、プラズマ排出口４０をプラズマ発生装置の下側に置かれる被加工物の加工領域上に位置させることで、被加工物の一部領域のみを加工し、被加工物の残り領域はプラズマの影響を受けない。また、プラズマ排出口４０を通じてだけプラズマが排出されることにより、プラズマが被加工物の加工部位以外の部分まで広がる現象を防止することもできる。   Thus, by forming the plasma discharge port 40, a discharge voltage is applied between the first electrode 10 and the second electrode 20, and the plasma generated between the dielectric 30 and the second electrode 20 is plasma. It is discharged downward through the discharge port 40. That is, by positioning the plasma discharge port 40 on the processing region of the workpiece placed below the plasma generator, only a partial region of the workpiece is processed, and the remaining region of the workpiece is plasma. Not affected. Further, by discharging the plasma only through the plasma discharge port 40, it is possible to prevent a phenomenon in which the plasma spreads to a portion other than the processing portion of the workpiece.

この際、プラズマ排出口４０を長いスリット形状に構成することで、被加工物の表面を直線状に加工することができ、被加工物またはプラズマ発生装置を移動させることで、被加工物の全面を加工することもできる。また、プラズマ排出口４０をホールまたは短いスリット形状に構成することにより、被加工物表面の局所部分のみを加工することもできる。このように、プラズマ排出口４０は必要に適した形状に多様に構成することができるものである。   At this time, the surface of the workpiece can be processed linearly by configuring the plasma discharge port 40 in a long slit shape, and the entire surface of the workpiece can be moved by moving the workpiece or the plasma generator. Can also be processed. Further, by forming the plasma discharge port 40 into a hole or a short slit shape, it is possible to process only a local portion on the surface of the workpiece. As described above, the plasma discharge port 40 can be variously configured in a shape suitable for necessity.

また、本発明のプラズマ発生装置は、微細物質の迅速な排出と、第２電極の熱が被加工物に伝達されることを防止するため、プラズマ排出口４０の外に外部ハウジング５０をさらに含んで構成することができる。 In addition, the plasma generator of the present invention further includes an external housing 50 outside the plasma discharge port 40 in order to prevent rapid discharge of fine substances and transfer of heat of the second electrode to the workpiece. Can be configured.

外部ハウジング５０は、プラズマ排出口４０が形成された領域を除いた領域を取り囲む形状に第２電極及び電極ハウジングから所定距離だけ離隔して設置される。   The outer housing 50 is installed in a shape surrounding a region excluding the region where the plasma discharge port 40 is formed, separated from the second electrode and the electrode housing by a predetermined distance.

電圧が印加されてプラズマが発生する過程では多量の熱が発生することができ、プラズマが発生する位置と被加工物間の距離は短いほど加工に有利である一方、被加工物に伝達される熱の影響が大きくなる。よって、外部ハウジング５０を備えることで、第２電極２０の下面が、プラズマ加工が行われる外部環境に直接露出しないようにして、被加工物の劣化現象を低減することができ、さらに外部ハウジングの適当な位置（例えば、図２で、外部ハウジングの両端に９０−２で表示する位置）に冷却手段をさらに備えると、前記のような劣化現象を一層低減させることができる。   A large amount of heat can be generated in the process in which plasma is generated by applying a voltage, and the shorter the distance between the position where the plasma is generated and the workpiece, the more advantageous for machining, while it is transmitted to the workpiece. The effect of heat increases. Therefore, by providing the external housing 50, the lower surface of the second electrode 20 can be prevented from being directly exposed to the external environment where the plasma processing is performed, and the deterioration phenomenon of the workpiece can be reduced. If a cooling means is further provided at an appropriate position (for example, a position indicated by 90-2 on both ends of the outer housing in FIG. 2), the deterioration phenomenon as described above can be further reduced.

また、プラズマ排出口４０と外部ハウジング５０との間に形成されたギャップによってなる吸入口６０によって、加工の必要な領域以外のプラズマ、及びプラズマが被加工物と反応した後の微細物質をより早く排出させることにより、加工領域の不要な拡張、または反応後の微細物質による表面汚染などを低減させることができる効果も得られる。 In addition, the suction port 60 formed by a gap formed between the plasma discharge port 40 and the outer housing 50 allows plasma other than the region that needs to be processed and fine substances after the plasma has reacted with the workpiece faster. By discharging, it is possible to obtain an effect of reducing unnecessary expansion of the processing region or surface contamination due to a fine substance after reaction.

プラズマ排出口４０と外部ハウジング５０の相対的高さは、被加工物の位置、反応後の不要なプラズマまたは微細物質を早く排気させる必要、及び局所領域に対する精密加工の必要などを総合的に考慮し、要求される工程に応じてプラズマ排出口の下端が外部ハウジングの下面に対して突出または陷沒、あるいは同一面状に変形可能である。 The relative height of the plasma discharge port 40 and the outer housing 50 comprehensively considers the position of the workpiece, the necessity of exhausting unnecessary plasma or fine substances after reaction, and the necessity of precision machining for the local region. Depending on the required process, the lower end of the plasma discharge port protrudes from the lower surface of the outer housing or can be deformed into the same plane.

吸入口６０は、図２に示すように、プラズマ排出口４０と外部ハウジング５０との間に、つまりプラズマ排出口４０の両側または周囲に沿って所定間隔の空間を置くことにより形成される。 As shown in FIG. 2, the suction port 60 is formed by placing a predetermined space between the plasma discharge port 40 and the external housing 50, that is, along both sides or the periphery of the plasma discharge port 40.

一方、吸入口６０を通じて吸入された物質は排気口８０によってダンパー７０を通じて装置の外部に排出される。この際、ダンパー７０は、外部ハウジング５０の一面に配置され、気流制御によって、吸入口６０を通じて排出される微細物質を処理の全領域で均一に吸い出す役目をし、排気口８０は、吸入口６０を通じて吸いこんだ微細物質を外部ハウジング５０の外部に排出する通路になる。 On the other hand, the substance sucked through the suction port 60 is discharged to the outside of the apparatus through the damper 70 through the exhaust port 80. At this time, the damper 70 is disposed on one surface of the outer housing 50, the air flow control, and uniformly sucked role in all areas of handling fine material is discharged through the suction port 60, exhaust port 80, intake port 60 The fine substance sucked in through the passage becomes a passage for discharging to the outside of the outer housing 50.

本発明のプラズマ発生装置には、装置で発生する熱を冷やすため（前述したように）冷却部を備えることができる。この場合、冷却部９０は、図２に９０で示すように、電極ハウジングの外部に設置されることもでき（９０−１）、外部ハウジング５０の外壁内に設置されることもでき（９０−２）、場合によっては２ヶ所の両方に設置されることもできる。   The plasma generator of the present invention can be provided with a cooling unit (as described above) in order to cool the heat generated by the device. In this case, as shown by 90 in FIG. 2, the cooling unit 90 can be installed outside the electrode housing (90-1), or can be installed inside the outer wall of the external housing 50 (90- 2) In some cases, it can be installed in both places.

一方、これまでは、放電電圧が印加される第１電極と誘電体が互いに密着している場合についてだけ説明したが、本発明は、第１電極または誘電体ではなく、第２電極（部）の構造にその特徴があるものなので、第１電極と誘電体（総称して第１電極部という）の形状はどんな形状にも変更可能なものであることを理解すべきである。例えば、電圧が印加される第１電極を取り囲むように誘電体を加工し、第１電極と誘電体間にはさらに他の液体誘電体などで満たす構造の第１電極部が思えられ、この場合にも本発明の同一技術思想を適用することができることは明らかであり、その他の多様な形態の第１電極部を有するプラズマ発生装置に対しても同様に適用することができることは当然である。   On the other hand, so far, only the case where the first electrode to which the discharge voltage is applied and the dielectric are in close contact with each other has been described, but the present invention is not the first electrode or the dielectric but the second electrode (part). Therefore, it should be understood that the shapes of the first electrode and the dielectric (collectively referred to as the first electrode portion) can be changed to any shape. For example, a first electrode portion having a structure in which a dielectric is processed so as to surround a first electrode to which a voltage is applied and the first electrode and the dielectric are filled with another liquid dielectric can be considered. In addition, it is obvious that the same technical idea of the present invention can be applied, and it is natural that the same technical idea can be applied to other plasma generating apparatuses having various types of first electrode portions.

また、本発明は、大気圧プラズマを例として説明したが、本発明の本質は第２電極のプラズマ排出口、外部ハウジング及び吸入口などの構造的特徴にあるものなので、大気圧プラズマ以外の真空プラズマなどその他のプラズマ発生装置にも、本発明の前記のような構造的特徴を適用する必要がある場合であれば、容易に適用することができることも明らかである。
以上説明した本発明の好ましい実施例は例示の目的で開示したもので、本発明が属する技術分野で通常の知識を持った者であれば、本発明の技術的思想を逸脱しない範囲内でいろいろに置換、変形、及び変更可能であり、このような置換、変更などは本発明の特許請求範囲に属するものである。 Although the present invention has been described by taking atmospheric pressure plasma as an example, the essence of the present invention lies in structural features such as the plasma discharge port of the second electrode, the external housing, and the suction port. It is also clear that other plasma generators such as plasma can be easily applied if it is necessary to apply the above structural features of the present invention.
The above-described preferred embodiments of the present invention have been disclosed for the purpose of illustration, and those having ordinary knowledge in the technical field to which the present invention belongs can be used in various ways without departing from the technical idea of the present invention. It is possible to substitute, modify, and change, and such substitution, change, and the like belong to the scope of the claims of the present invention.

本発明は、下部電極の一部領域を外部に突出させてプラズマ排出口を形成し、下部電極の下面を外部から遮断させる外部ハウジングを備えることで、局所範囲に対するプラズマ加工が行われる場合、被加工物の加工部位以外の部分に損傷を与えることを防止することができ、プラズマ排出口と外部ハウジングとの間に吸入口を形成することで、プラズマ加工の際に発生する微細物質を効果的に除去することに適用可能である。 The present invention includes an external housing that projects a partial region of the lower electrode to the outside to form a plasma discharge port and shields the lower surface of the lower electrode from the outside. It is possible to prevent damage to parts other than the processing part of the workpiece, and by forming the suction port between the plasma exhaust port and the external housing, it is possible to effectively eliminate fine substances generated during plasma processing. It is applicable to the removal.

従来の大気圧プラズマ発生装置を示す図である。It is a figure which shows the conventional atmospheric pressure plasma generator. 本発明の一実施例によるプラズマ発生装置の構造を示す図である。It is a diagram showing a structure of a I Help plasma generating apparatus according to an embodiment of the present invention.

１ 被加工物
２ 発生熱
３ 被加工物の加工部位
１０ 第１電極
２０ 第２電極
３０ 誘電体
４０ プラズマ排出口
５０ 外部ハウジング
６０ 吸入口
７０ ダンパー（ｄａｍｐｅｒ）
８０ 排気口
９０ 冷却部 DESCRIPTION OF SYMBOLS 1 Workpiece 2 Generated heat 3 Workpiece processing part 10 1st electrode 20 2nd electrode 30 Dielectric 40 Plasma discharge port 50 External housing 60 Inlet 70 Damper
80 exhaust port 90 cooling part

Claims (5)

プラズマ発生装置であって、
電源放電電圧が印加される第１電極、及び前記第１電極に付着されるかまたは第１電極を取り囲む形態の誘電体でなる第１電極部、
前記第１電極部から所定間隔離隔して設置され、前記第１電極部と対向する面の反対側の面から突出するように伸びるプラズマ排出口を有する第２電極、及び
前記プラズマ排出口の周辺を開放しつつ、前記第１電極部及び第２電極の周囲を取り囲む外部ハウジング、を含み、
前記外部ハウジングとプラズマ排出口との間の間隙でもって、微細物質を吸い込む吸入口を形成すること
を特徴とする、プラズマ発生装置。 A plasma generator,
A first electrode to which a power discharge voltage is applied, and a first electrode portion made of a dielectric material attached to or surrounding the first electrode;
The first is from the electrode portion disposed in a predetermined distance apart intervals, a second electrode having a plasma outlet extending so as to project from the surface opposite to the first electrode portion and the opposing surfaces, and
An outer housing surrounding the periphery of the first electrode part and the second electrode while opening the periphery of the plasma discharge port,
Wherein with at the gap between the outer housing and the plasma outlet, <br/> and forming a suction port for sucking the fine material, flop plasma generator. 前記プラズマ排出口は、スリット状であることを特徴とする、請求項１に記載のプラズマ発生装置。 The plasma outlet, characterized in that it is a slit-flop plasma generating apparatus according to claim 1. 前記プラズマ排出口は、ホール状であることを特徴とする、請求項１に記載のプラズマ発生装置。 The plasma outlet, characterized in that it is a hole shape, flop plasma generating apparatus according to claim 1. 前記吸入口を通じて微細物質を吸いこむダンパー、及び前記微細物質を前記外部ハウジングの外部に排出する排気口をさらに含むことを特徴とする、請求項１に記載のプラズマ発生装置。 And further comprising a discharge Kiguchi you discharge the sucked cast damper fine material through the suction port, and a pre-Symbol fine fine material to the outside of the outer housing, flop plasma generating apparatus according to claim 1. 前記外部ハウジングに冷却部をさらに設けたことを特徴とする、請求項１に記載のプラズマ発生装置。 Characterized by further provided with a cold却部to the external housing, flop plasma generating apparatus according to claim 1.
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