JP4794527B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor substrate sealing structure, and more particularly to a semiconductor device including a sealing portion in which stress caused by a protective portion is relaxed and a method for manufacturing the same.

  Conventionally, as a means for sealing wiring formed on a substrate, device elements mounted on the substrate, etc., for example, a cavity in which a functional element is arranged in a substrate having a cavity opened upward is formed. A method has been proposed in which the sealing resin sheet is overlaid so as to cover, and the sealing resin sheet is heated and dissolved to efficiently fill the cavity and seal the functional element with the sealing resin. (Patent Document 1).

  In recent years, in order to reduce the size and increase the functionality of the device itself, a semiconductor device has been proposed in which devices are stacked using a through wiring substrate on which a through electrode is formed which communicates from one surface of the substrate to the other surface. Has been. As a structure of the semiconductor substrate using this through wiring substrate and means for sealing the wiring formed on the substrate, there are two types as shown in FIGS. 9 and 10, for example.

  A semiconductor device 101 shown in FIG. 9 includes a conductive substrate 102, a through hole 102a formed so as to communicate from one surface to the other surface of the substrate 102, and the substrate 102 so as to be exposed in the through hole 102a. The inner wall surface of the through-hole 102a is covered with a conductive member such as metal via the insulating layer 103 so as to leave the electrode 104 arranged on one surface and the concave space 109 opened on one surface in the through hole 102a. The through electrode 108, the conductive portion 105 disposed on the substrate 102 via the insulating layer 103, and the insulating protective portion 106 disposed so as to cover the conductive portion 105 are protected as necessary. The opening 106a through which the conductive portion 105 is exposed is formed in the portion 106 to provide the bump α.

  On the other hand, the semiconductor device 111 shown in FIG. 10 includes a conductive substrate 112, a through hole 112a formed so as to communicate from one surface to the other surface of the substrate 112, and exposed in the through hole 112a. An electrode 114 disposed on one surface of the substrate 112 and a conductive member such as metal are covered on the inner wall surface through an insulating layer 113 so as to leave a concave space opened on one surface in the through hole 112a. The through electrode 118, the conductive portion 115 disposed on the substrate 112 via the insulating layer 113, and the insulating portion disposed so as to cover the conductive portion 115 and completely fill the inside of the through hole. The protective part 116 is configured, and an opening part 116a that exposes the conductive part 115 is formed in the protective part 116 as necessary to provide the bump α.

However, the technique described in Patent Document 1 has a problem that a void (gap) having a step on the surface is likely to occur. The technique described in Patent Document 1 is not desirable because it requires heating at a high temperature in order to dissolve the sealing resin, and the device element may be exposed to a high temperature to cause electrical problems. Moreover, in a semiconductor device having a through electrode formed so as to leave a space in the through hole, the technique described in Patent Document 1 cannot be applied as it is to cover the conductive portion.
In general, a solder resist such as a polyimide resin having high reliability with respect to environmental tests is often used for the insulating protective portion. However, the polyimide solder resist has a very high curing temperature of 200 ° C. or higher, and if a large void or the like is generated in the through-hole, the through-hole portion of the protective part is ruptured, and it is difficult to achieve high reliability. is there. Therefore, the structure as shown in FIG. 9 is optimal for the structure that requires high-temperature heat treatment. However, it is difficult to cure the protective part at a high temperature when processing a functional element having a low heat resistance, for example, having a temperature resistance at a process temperature of 180 ° C. or lower. Therefore, when an epoxy or acrylic resist capable of low temperature hardness is applied, the reliability of the resist with respect to humidity tends to be inferior to that of a polyimide solder resist. In addition, when applied to through-holes with a hole diameter of 100 μm or less, the protective part becomes extremely thin, so in high-temperature and high-humidity tests and the like, moisture easily reaches the metal wiring, and high reliability such as oxidation occurs in the conductive part. It was difficult to realize.

On the other hand, if the resin is completely filled in the through hole as shown in FIG. 10, an internal stress is likely to be generated in the through hole due to expansion of the protective portion when a sudden or large temperature change occurs. Due to this internal stress, for example, there is a possibility that voids or cracks may occur in the protective portion filled in the through hole. In addition, a phenomenon such as separation between the electrode and the conductive portion has been confirmed, and there is a possibility that various problems such as disconnection of the wiring and increase in resistance value may occur. Therefore, it has been difficult to achieve high reliability in the conductive portion.
Furthermore, if a resist with a small Young's modulus such as silicone resin is used as a protective part in the structure of FIG. 10 to reduce the stress in the through hole, the stress in the through hole due to temperature change is relieved because the resist has low hardness. However, there is a risk that the adhesion between the conductive part and the insulating layer cannot be sufficiently obtained outside the through hole, and the protective part may be peeled off or the surface may be damaged due to external impact or temperature change. It was difficult to realize.
JP-A-8-45972

  The present invention has been made in view of the above circumstances, and includes a through-hole having an opening toward the other surface of the semiconductor substrate, and is caused by stress caused by expansion of a protective portion disposed in the through-hole. It is a first object of the present invention to provide a semiconductor device that suppresses the peeling between the electrode and the conductive portion that is caused and has improved connection reliability between the two.

  In the manufacture of a semiconductor device having a through-hole having an opening toward the other surface of the semiconductor substrate, the present invention reduces the stress caused by the expansion of the protective portion disposed in the through-hole. A second object is to provide a method of manufacturing a semiconductor device that can suppress the separation between the conductive part and the conductive part and improve the connection reliability between the two.

  According to a first aspect of the present invention, there is provided a semiconductor device having a functional element disposed on one surface, an electrode disposed on one surface of the semiconductor substrate and electrically connected to the functional element, the semiconductor substrate comprising: Insulation disposed so as to cover a through hole provided toward the electrode from the other surface, one surface of the semiconductor substrate excluding the region where the functional element is disposed, and the other surface, and a side surface in the through hole. A semiconductor device comprising at least a conductive portion disposed on the other surface side of the semiconductor substrate via the insulating layer and covering the inside of the through hole, wherein the semiconductor device is disposed in the through hole. A first protective part disposed along the conductive part; and a second protective part disposed on the other surface side of the semiconductor substrate so as to cover the insulating layer, the conductive part, and the first protective part. Comprising at least the first protection part and the second protection part The enclosed comprising gap, among the through-holes, characterized in that it has at least in the vicinity of the electrode.

  A semiconductor device according to a second aspect of the present invention is the semiconductor device according to the first aspect, characterized in that the gap is arranged in the entire area of the through hole.

  A semiconductor device according to a third aspect of the present invention is characterized in that, in the second aspect, the first protective part is made of an electrodeposition paint, and the second protective part is made of a solder resist.

  A semiconductor device according to a fourth aspect of the present invention is the semiconductor device according to the third aspect, wherein the thickness of the first protection portion is not less than 1 μm and not more than 20 μm.

  According to a fifth aspect of the present invention, there is provided a semiconductor device manufacturing method comprising: a semiconductor substrate having functional elements disposed on one surface; an electrode disposed on one surface of the semiconductor substrate and electrically connected to the functional elements; A through hole provided toward the electrode from the other surface of the semiconductor substrate, one surface and the other surface of the semiconductor substrate excluding the region where the functional element is disposed, and a side surface in the through hole are arranged to cover the surface. And a conductive portion disposed on the other surface side of the semiconductor substrate via the insulating layer and disposed so as to cover the inside of the through hole, and the conductive portion is disposed in the through hole. And a second protective part disposed on the other surface side of the semiconductor substrate and covering the insulating layer, the conductive part, and the first protective part. Comprising at least the first protection part and the second protection part A method of manufacturing a semiconductor device having a gap in the through-hole, wherein the first protection portion and the second protection portion are individually manufactured, and the first protection portion and the second protection portion It is characterized by forming a gap surrounded by.

A semiconductor device of the present invention includes a functional element and an electrode electrically connected to the functional element on one surface of a semiconductor substrate. A through hole is formed from the other surface of the semiconductor substrate toward the electrode. The side surface in the through hole and the semiconductor substrate are covered with an insulating layer, and at least the other surface of the semiconductor substrate, the inner side surface of the through hole, and one surface of the electrode exposed in the through hole through the insulating layer. The conductive parts are continuously arranged. Further, in the through hole, the first protective part is arranged on the inner wall surface via the conductive part. In addition, a second protective part is disposed on the other surface side of the semiconductor substrate so as to cover the conductive part, the insulating layer, and the first protective part. In the through hole, a gap surrounded by the first protective part and the second protective part is disposed at least in the vicinity of the electrode.
With this configuration, the expansion of the first protection portion that occurs when heat from the outside, heat generated by the flow of electricity, humidity, or the like is applied is induced in the direction of the gap provided in the vicinity of the electrode. For this reason, the stress caused by the expansion of the first protective portion positively acts in the gap direction, and the stress acting in the opposite direction in which the conductive portion and the electrode are in contact with each other is reduced. Therefore, the stress applied to the electrode via the conductive part and the conductive part is suppressed, and the stress acting on the interface between the conductive part and the electrode is also reduced. Therefore, the occurrence of peeling between the electrode and the conductive portion can be prevented, so that it is possible to provide a semiconductor device with improved connection reliability between them.

In the method for manufacturing a semiconductor device of the present invention, the first protective part is formed in the through hole via the conductive part, and then the second protective part is formed.
With this configuration, since the first protective part and the second protective part are individually manufactured, a gap surrounded by the first protective part and the second protective part is prepared at least in the vicinity of the electrode in the through hole. can do. In other words, by separately producing the first protective part and the second protective part, the size and shape of the gap formed in the through hole can be formed with a high degree of design freedom according to the semiconductor device to be applied. it can. When the stress due to the expansion of the first protective part is more actively reduced, a gap can be formed in the entire area of the through hole, and at the same time, when adhesion is required in the through hole, A gap is provided in the vicinity of the electrode, and the remaining through hole can be filled with a solder resist or the like. Furthermore, both the first protective part and the second protective part can be made of different materials by separately producing them. In this case, by using a material that is stable with respect to heat, humidity, or the like for the first protection part, a semiconductor device in which the generation of stress due to the expansion of the first protection part is further reduced can be obtained. Therefore, it can suppress that the stress which arises by expansion | swelling of a 1st protection part is added to an electrode via a conductive part and a conductive part. Therefore, the stress generated at the interface between the conductive portion and the electrode is also reduced, and a method for manufacturing a semiconductor device that can prevent the occurrence of separation between the conductive portion and the electrode is provided.

Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings.
FIG. 1A is a cross-sectional view schematically showing a first embodiment of a semiconductor device of the present invention.
In the semiconductor device 10A according to the first embodiment of the present invention, the functional element 11 is arranged on one surface of the semiconductor substrate 12, and the insulating layer 13 covers the semiconductor substrate 12 so that at least a part of the functional element 11 is exposed. Is arranged. An electrode 14 is arranged on one surface of the semiconductor substrate 12 so as to be electrically connected to the functional element 11, and a through hole 12 a is formed from the other surface of the semiconductor substrate 12 toward the electrode 14. Further, the conductive portion 15 is continuously arranged so as to cover at least a part of the inner wall of the through hole 12 a, the electrode 14, and the other surface of the semiconductor substrate 12. A first protective part 16 is arranged inside the through hole 12a via a conductive part 15 so as to have a gap 16a, and a second protection is provided on the other surface side of the semiconductor substrate 2 via an insulating layer 13 or a conductive part 15. Part 17 is arranged. Further, the gap 16a is covered with the first protection part 16 and the second protection part 17 in the through hole 12a and is a closed space.
Each will be described below.

  Examples of the functional element 11 include an IC chip, an optical element, a micro relay, a micro switch, a pressure sensor, a DNA chip, a MEMS device, and a micro fuel cell. Moreover, when using what can be hardened | cured at low temperature for the below-mentioned 1st protection part 16, it is possible to use the functional element 11 with low heat resistance, for example, the process temperature of 180 degrees C or less.

For example, silicone, gallium arsenide, glass, ceramic, germanium, or the like having a thickness of about several hundred μm is used for the semiconductor substrate 12.
The semiconductor substrate 12 has a through-hole 12a formed of a hollow portion formed so as to communicate from one surface to the other surface. In addition to the one surface and the other surface, the semiconductor substrate 12 has an insulating layer 13 formed on the inner wall surface of the through hole 12a. The through hole 12a is, for example, a fine hole having a diameter of 20 to 100 μmφ and a depth of 50 to 250 μm, and by covering the inner wall surface with a conductive material via the insulating layer 13 so as to leave a space inside thereof, A through electrode 18 used as a wiring is formed. In the illustrated example, only two through holes 12a are formed on the semiconductor substrate 12, but the number of through holes 12a formed on the semiconductor substrate 12 is not particularly limited.

  The insulating layer 13 is made of, for example, a liquid resin such as a polyimide resin, an epoxy resin, or a silicone resin. Moreover, the thickness can be set to the thickness which can provide required insulation, for example, is 0.1-3 micrometers.

  The electrode 14 is electrically connected to the functional element 11 and the conductive portion 15, and Al, Al—Cu, Al—Si—Cu, or the like is used. These are used as I / O pads. Further, the through electrode is formed by being exposed to the through hole 2a and electrically connected to the conductive portion.

  The wiring part 19 electrically connects the functional element 11 and the electrode 14 and is preferably made of a material having excellent conductivity. Examples of such a material include Al, Cu, Al—Cu, and Al—Si—Cu.

The conductive portion 15 is a wiring layer that is continuously disposed on at least a part of the other surface of the semiconductor substrate 12 and the inner wall of the through hole 12 a via the insulating layer 13, and is electrically connected to the electrode 14. Yes. As the material of the conductive portion 15, for example, a metal material having excellent conductivity such as Cu, Al, Ni, or Au can be used, and the thickness thereof is, for example, 0.5 to 20 μm.
The conductive portion 15 may have a multilayer structure made of two or more kinds of metal materials or a structure in which films made of different materials are laminated. In this case, in the outer layer, element transfer (diffusion) occurs between a material such as titanium having excellent adhesion to the material forming the electrode 14, or between the conductive portion 15 and the electrode 14 or the semiconductor substrate 12. It is preferable that a metal material (barrier metal) that can be prevented is disposed and a metal such as copper having high conductivity is disposed on the inner layer.

  Furthermore, between the conductive part 15 and the through-hole 12a (or the insulating layer 13), or between the conductive part 15 and the first protective part 16, for example, a material having a stress relaxation action or a barrier metal that prevents element movement, Or it is good also as a structure which provided the intermediate | middle layer of the multilayered structure which arranged the material etc. which were excellent in adhesiveness. For example, when the conductive portion 15 is made of Cu, examples of the barrier metal include TaN, Ta, W, WN, TiN, TiSiN, etc., and each has excellent adhesion. In addition to these, Cr, TiW, and the like can be cited as barrier metals having high adhesion.

The 1st protection part 16 is an insulating sealing part distribute | arranged in the through-hole 12a, and is formed with an electrodeposition coating material. Such an electrodeposition paint is synthesized from a resin, a pigment, a curing agent, and the like, and examples of the resin to be used include an epoxy resin, a polyimide resin, and an acrylic resin. Examples of the pigment include barium sulfate, talc, calcium carbonate, barium carbonate, silica, titanium, alumina, and mica. These can be used alone or in combination of two or more. Although it does not specifically limit as a hardening | curing agent, For example, organic acids, such as a succinic acid, adipic acid, salicylic acid, and sebacic acid, are mentioned. The first protective part 16 can be formed with an accurate thickness along the conductive part 15 by making the electrodeposition paint.
The thickness of the first protective part 16 is preferably 20 μm or less so that the gap 16a is not blocked by expansion due to the manufacturing process temperature.
By making the first protective part 16 thin, it is possible to minimize the generation of internal stress in the through hole 12a caused by high temperature, temperature change, humidity change, or the like.

The gap 16a is a closed space surrounded by the first protective part 16 and the second protective part 17 in the through hole 12a, and is caused by expansion of the first protective part 16 caused by high temperature, humidity change, or the like. It works to relieve stress. By having this gap 16a at least in the vicinity of the electrode, the stress caused by the expansion of the first protective portion 16 actively acts in the direction of the gap 16a, and the stress applied in the direction in which the electrode 14 and the conductive portion 15 are in contact with each other. Can be relaxed. Therefore, the stress applied to the conductive portion 15, the electrode 14, and the interface between the conductive portion 15 and the electrode 14 can be suppressed, and peeling of the conductive portion 15 and the electrode 14 can be suppressed.
Further, since the semiconductor device having the gap 16a is not exposed to a high temperature of 180 ° C. or higher for a long time in the manufacturing process, the first protective part 16 or the second protective part by the gap 16a, which has occurred in the past, has occurred. 17 burst does not occur.

  The second protective part 17 is an insulating sealing part arranged on the other surface side of the semiconductor substrate 12 and is formed of a solder resist having process resistance for solder bump production or the like. In addition, it is preferable to use a material having high adhesion to the conductive portion 15 and the insulating layer 13 so as to protect the conductive portion 15 and prevent moisture and the like from entering the gap 16a and the through electrode 18. This is because moisture passes through the resin and prevents oxidation and corrosion of the conductive portion 15. Examples of such a material include an epoxy resin and a polyimide resin. The thickness of the second protective part 17 is preferably 20 to 50 μm so as to have sufficient adhesion and sealing properties.

  In the semiconductor device 10A of the present embodiment, the first protective part 16 is made of an electrodeposition paint, and the second protective part 17 is made of a solder resist. Therefore, the 1st protection part 16 and the 2nd protection part 17 can be produced with different resin. In this case, it is preferable that the resin that forms the first protection portion 16 is formed of a resin that is less affected by heat, humidity, or the like than the resin that forms the second protection portion 17. The internal stress caused by the first protection part 16 can be further suppressed.

  In the semiconductor device of the present embodiment, if necessary, an opening 17a is formed in the second protective portion 17 so that the conductive portion 15 is exposed, and a solder bump α electrically connected to the conductive portion 15 is provided. You may do it. Thereby, connection with an external board | substrate is attained. Regarding the solder bump α, for example, when a lead-free solder alloy is used, it is preferable to use SnAg3.0Cu0.5 or SnAg3.5Cu0.7, and more preferably SnAg3.0Cu0.5. Further, the size of the solder bump α and the interval to be formed can be adjusted as appropriate. For example, the size is preferably 30 to 500 μm, and the interval is preferably 100 to 400 μm.

Next, a method for manufacturing a semiconductor device according to the first embodiment of the present invention will be described with reference to the drawings.
3 to 6 are schematic process diagrams sequentially showing an example of the manufacturing process.
First, as shown in FIG. 3A, a through-hole 12a having a diameter of 20 to 100 μm is formed at a predetermined position of a semiconductor substrate 12 provided with a functional element 11 on one side, communicating from one side to the other side. In addition to the one surface and the other surface of the semiconductor substrate 12, a semiconductor substrate 12 having an insulating layer 13 formed on the inner wall surface of the through hole 12a is prepared. The through-hole 12a is formed using a known method, but can be formed using, for example, a silicon deep etching apparatus (DeepRIE).
The insulating layer 13 is formed by insulating the surface layer portion of the semiconductor substrate 12 and has a thickness of, for example, about 0.1 to 3 μm. Moreover, you may make it form by apply | coating liquid resins, such as a polyimide resin, an epoxy resin, a silicone resin, for example. In this case, the insulating layer 13 can be formed by applying, for example, a spin coating method, a casting method, a dispensing method, or the like. When the material used for the insulating layer 13 has photosensitivity, it can be formed by patterning using a photolithography technique.

Next, as shown in FIG. 3A, the electrode 14 exposed in the through hole 12 a and electrically connected to the functional element 11 is arranged on one surface of the semiconductor substrate 12, and the electrode 14 and the functional element 11 are arranged. 3 is provided, and as shown in FIG. 3B, on the other surface side of the semiconductor substrate 12, the conductive portion 15 as wiring via the insulating layer 13 and the inner wall surface of the through hole 12a. A through electrode 18 as a wiring is continuously formed so as to leave a space in the inside through the insulating layer 13. As a method for forming the conductive portion 15, for example, it can be formed by sputtering or vapor deposition. Further, if the conductive portion 15 formed by the above method is plated, a thicker conductive portion 15 can be formed, and even if oxidation occurs on the metal surface layer, an increase in resistance value is suppressed. Expected to be effective.
The through electrode 18 leaving the space in this way can be formed together with the conductive portion 15, and the wiring formation time can be shortened as compared with the case where the inside of the through hole 12a is completely filled with the conductive portion.

Next, the first protective part 16 is formed by applying with an electrodeposition paint.
First, as shown in FIG. 4A, a first resist 51 is formed on the other surface side of the semiconductor substrate 12 by a spin coating method, a printing method, a laminating method, or the like. Regarding the first resist, it is preferable to use a photosensitive one, and examples of the material include polyimide, epoxy, and silicone resins.

  Next, as shown in FIG. 4B, a first opening 51a is formed in the first resist by photolithography so that the through hole 12a is opened.

  Next, as shown in FIG. 5A, a semiconductor substrate 12 immersed in a bath 81 containing pure water or the like is placed on a stage (not shown) in a vacuum chamber 80 and evacuated. The pressure is reduced to about 100 Pa to 5000 Pa, and as shown in FIG. 5B, bubbles and the like in the through hole 12a are removed, and water and the like are completely filled. By this step, it is possible to suppress the adhesion of the electrodeposition paint due to bubbles remaining in the through hole 12a.

Next, as shown in FIG. 6A, the first protective part 16 is placed through the conductive part 15 so that the gap 16a remains in the through hole 12a by being immersed in a bath 82 containing electrodeposition paint. Formed by electrodeposition coating.
By using the electrodeposition paint, for example, the first protective part 16 can be formed with an accurate resin thickness along the conductive part 15 even in a fine hole having a hole diameter of 100 μm or less. As for the thickness of the 1st protection part 16, 20 micrometers or less are preferred.

  Thereafter, as shown in FIG. 6C, the first resist 51 is removed by photolithography or the like.

Next, the conductive part 15 is patterned.
First, as shown in FIG. 7A, a photosensitive second resist 52 is formed via the conductive portion 15. In order to suppress the filling of the second resist 52 into the gap 16a, it is preferable to use a liquid or film-like one for the second resist 52, and to laminate each of them by spin coating or atmospheric pressure. Examples of the material of the second resist 52 include an epoxy resin and an acrylic resin.

  Next, as shown in FIG. 7B, a second opening 52a is formed in the second resist 52 by photolithography.

  Next, as shown in FIG. 7C, the conductive portion 15 exposed in the second opening 52a is etched. This etching method may be selected as appropriate according to the properties of the substance constituting the conductive portion 15.

Next, as shown in FIG. 7D, the second resist 52 is removed by, for example, photolithography.
However, for example, in the case where only the portion to be the wiring of the conductive portion 15 is patterned using photolithography and grown in advance by plating, it is not always necessary to form the second resist 52 when performing etching.

Next, the second protection part 17 is formed.
First, as shown in FIG. 8A, the second protective portion 17 as a photosensitive solder resist is formed on the other surface side of the semiconductor substrate 12 by, for example, a spin coating method, a printing method, or a laminating method. 15 or an insulating layer 13.

Next, as shown in FIG. 8B, a second opening 17a is formed in the second insulating layer 17 by photolithography so that at least a part of the conductive portion 15 is exposed.
With the above, the semiconductor device 10A of the first embodiment can be manufactured.

  Thereby, since the 1st protection part 16 and the 2nd protection part 17 are produced separately, it becomes possible to produce leaving the space | gap 16a in the electrode 14 side in the through-hole 12a. Therefore, it is possible to suppress the generation of stress due to the first protective portion 16 in the vicinity of the electrode 14, and to suppress the peeling between the electrode 14 and the conductive portion 15 and to obtain the semiconductor device 10A with improved connection reliability. it can. Further, since the second protective portion 17 covering the gap 16a is formed of a solder resist, it is possible to suppress the intrusion of moisture or the like into the gap 16a. For this reason, it is difficult for moisture or the like to enter the through-hole 12a, and oxidation and corrosion of the conductive portion 15 can be suppressed. The second protective portion 17 is formed by applying a liquid resist by spin coating or laminating a film-like resist under atmospheric pressure, thereby forming the second protective portion 17 in the through hole 12a. The resin can be prevented from being completely filled. Moreover, since the 1st protection part 16 and the 2nd protection part 17 can be produced with different resin, the resin which forms the 1st protection part 16 uses the material which does not easily expand with respect to heat or humidity. Thus, it is possible to further suppress the generation of internal stress due to the first protection part 16.

  In addition, solder bumps α that are electrically connected to the conductive portions 15 may be formed in the openings 17 a formed in the second protection portion 17. With respect to the method for producing the solder bump α, a known method can be used.

As an application example of the first embodiment of the present invention, as shown in FIG. 1B, the first protective portion 16 is continuously arranged not only inside the through hole 12a but also to the other surface side of the semiconductor substrate 12. May be.
Since the conductive portion 15 disposed on the other surface side of the semiconductor substrate 12 is in contact with the first protective portion 16, the influence of expansion of the first protective portion 16 due to heat and humidity on the conductive portion 15 can be reduced. Therefore, the connection reliability of the semiconductor device can be improved.

  As described above, in the semiconductor device 10B in which the first protection portion 16 is continuously arranged from the inside of the through hole 12a to the other surface side of the semiconductor substrate 12, the manufacturing method thereof is as follows. First, as in the first embodiment, a through hole is formed in a semiconductor substrate having functional elements arranged on one surface, and an insulating layer and an electrode are provided. Subsequently, after producing a wiring part and a conductive part in the same manner as in the first embodiment, a first resist is similarly formed. Next, an opening is provided in the first resist so that the first protection portion is stacked on the conductive portion in the through hole and the conductive portion disposed on the other surface of the semiconductor substrate. Next, as in the first embodiment, the first protective part is formed through the conductive part by electrodeposition coating. Thereafter, similarly to the first embodiment, the conductive portion is patterned, and the second protective portion is formed and patterned. Here, the semiconductor device of this application example is obtained by etching the first protective part exposed to the opening of the second protective part by a dry process.

FIG. 2A is a schematic diagram of a semiconductor device 20A according to the second embodiment of the present invention.
In the semiconductor device 20A according to the third embodiment of the present invention, the functional element 21 is disposed on one surface of the semiconductor substrate 22, and the insulating layer 23 covers the semiconductor substrate 22 so that at least a part of the functional element 21 is exposed. Is arranged. An electrode 24 is arranged on one surface of the semiconductor substrate 22 so as to be electrically connected to the functional element 21, and a through hole 22 a is formed from the other surface of the semiconductor substrate 22 toward the electrode 24. Further, the conductive portion 25 is continuously arranged so as to cover at least a part of the inner wall of the through-hole 22a, the electrode 24, and the other surface of the semiconductor substrate 22. A first protective part 26 is arranged inside the through hole 22a via a conductive part 25 so as to have a gap 26a, and a second protection is provided on the other surface side of the semiconductor substrate 22 via an insulating layer 23 and a conductive part 25. Part 27 is arranged. Further, the gap 26 a is covered with the first protection part 26 and the second protection part 27 and is a closed space. In the semiconductor device 20 </ b> A according to the second embodiment of the present invention, the second protection part 27 is disposed so as to fill the through hole 22 a so that the gap 26 a is disposed near the electrode 24.

  With this configuration, since the gap 26a is disposed in the vicinity of the electrode 24, the stress caused by the first protective portion 26 in the through hole 22a can be reduced, and therefore, the peeling between the electrode 24 and the conductive portion 25 is suppressed. can do. Moreover, since the stress added to the 2nd protection part 27 can also be suppressed, peeling of this 2nd protection part 27 etc. can be reduced. Therefore, the adhesion between the second protective part 27 and the conductive part 25 or the insulating layer 23 can be maintained. Therefore, the semiconductor device 20A with improved connection reliability can be obtained. In addition, since the second protective portion 27 is filled up to the inside of the through hole 22a leaving the gap 26a, it has excellent adhesion and sealing properties, and further oxidizes and corrodes the conductive portion 25 due to intrusion of moisture and the like. It becomes possible to suppress. Therefore, the semiconductor device 20A with further improved connection reliability can be obtained in a high humidity test or the like.

  Further, the shape of the gap 26a in the through hole 22a is not particularly limited as long as the gap 26a is disposed at least near the electrode 24 in the through hole 22a. For example, the first protection of the inner wall of the through hole 22a is not limited. It may be arranged along the portion 26.

  Also, in the semiconductor device of this embodiment, if necessary, an opening 27a is formed so that the conductive portion 25 is exposed to the second protective portion 27, and the solder bump α electrically connected to the conductive portion 25 is formed. May be provided. Thereby, connection with an external board | substrate is attained. The solder bump α is the same as in the first embodiment.

As described above, in the method of manufacturing the semiconductor device 20A having the structure in which the second protective portion 27 is filled in the through hole 22a, the method of forming the second protective portion 27 is manufactured by a vacuum laminator, and the remaining steps are the first implementation. It can be produced in the same manner as the form.
Accordingly, the second protective layer 27 can be filled by arranging the gap 26a in the vicinity of the electrode 24 in the through hole 22a.

  Also in the manufacturing method of the semiconductor device 20A of the second embodiment, since the first protection part 26 and the second protection part 27 are individually manufactured, the gap 26a may be disposed near the electrode 24 in the through hole 22a. It becomes possible. Therefore, it is possible to suppress the generation of stress due to the first protection part 26 in the vicinity of the electrode 24, and consequently, the peeling between the electrode 24 and the conductive part 25 is suppressed, and the semiconductor device 20A with improved connection reliability is obtained. Can do. Further, since the second protective portion 27 covering the gap 26a is formed of a solder resist, it is possible to suppress the intrusion of moisture or the like into the gap 26a. Moreover, since the 2nd protection part 27 is filled to the middle of the through-hole 22a, a water | moisture content etc. cannot penetrate | invade into the through-hole 22a, and the oxidation and corrosion of the electroconductive part 25 can be suppressed more. Furthermore, since the first protective part 26 and the second protective part 27 can be made of different resins, the resin forming the first protective part 26 is made of a material that does not easily expand with respect to heat and humidity. Thus, it is possible to further suppress the generation of internal stress due to the first protection part 26.

FIG. 2B shows an application example of the semiconductor device according to the second embodiment of the present invention. In the semiconductor device 20 </ b> B in this application example, the first protection portion 26 filled in the through hole 22 a is disposed to the other surface side of the semiconductor substrate 22 via the conductive portion 25.
With this configuration, since the conductive portion 25 disposed on the other surface side of the semiconductor substrate 22 is in contact with the first protection portion 26, expansion due to heat and humidity of the first protection portion 26 is caused on the other surface side of the semiconductor substrate 22. Since it is possible to reduce the influence on the conductive portion 25 disposed on the semiconductor device, the connection reliability of the semiconductor device can be improved. In addition, since the second protective portion 27 is filled in the through hole 22a leaving the gap 26a, it has excellent adhesion and sealing properties, and further suppresses oxidation and corrosion of the conductive portion 25 due to intrusion of moisture and the like. It becomes possible to do. Therefore, the semiconductor device 20B with improved connection reliability can be obtained in a high humidity test or the like.

  Also in the semiconductor device 20B of this embodiment, if necessary, an opening 27a is formed on the second protective portion 27 so that the conductive portion 25 is exposed, and solder bumps that are electrically connected to the conductive portion 25 are formed. α may be provided. Thereby, connection with an external board | substrate is attained. The solder bump α is the same as in the first embodiment.

  As described above, the manufacturing method of the semiconductor device 20B in the application example of the second embodiment relates to the manufacturing process of the second embodiment with respect to the formation process of the second protection portion, and the first embodiment with respect to the remaining processes. This is the same as the application example of the semiconductor device.

  Thereby, since the 1st protection part 26 and the 2nd protection part 27 are produced separately, it becomes possible to produce leaving the space | gap 26a in the electrode 24 side in the through-hole 22a. Therefore, the generation of stress due to the first protective portion 26 in the vicinity of the electrode 24 can be suppressed by the gap 26a, and in turn, the separation between the electrode 24 and the conductive portion 25 can be suppressed, thereby improving the connection reliability. Device 20B can be obtained. Further, since the second protective portion 27 covering the gap 26a is formed of a solder resist, it is possible to suppress the intrusion of moisture or the like into the gap 26a. Moreover, since the 2nd protection part 27 is filled in the through-hole 22a, a water | moisture content etc. cannot penetrate into the through-hole 22a, and can suppress the oxidation and corrosion of the electroconductive part 25 more.

  The present invention relates to an improvement in the sealing structure of a semiconductor substrate, and can be applied to a package provided with a device element such as a semiconductor device or a MEMS element that requires miniaturization and high functionality of the device itself.

It is the figure which showed typically the semiconductor device which concerns on 1st embodiment of this invention. It is the figure which showed typically the semiconductor device which concerns on 2nd embodiment of this invention. It is the figure which showed typically the 1st manufacturing process of the semiconductor device which concerns on 1st embodiment of this invention. It is the figure which showed typically the 2nd manufacturing process of the semiconductor device which concerns on 1st embodiment of this invention. It is the figure which showed typically the 3rd manufacturing process of the semiconductor device which concerns on 1st embodiment of this invention. It is the figure which showed typically the 4th manufacturing process of the semiconductor device which concerns on 1st embodiment of this invention. It is the figure which showed typically the 5th manufacturing process of the semiconductor device which concerns on 1st embodiment of this invention. It is the figure which showed typically the 6th manufacturing process of the semiconductor device which concerns on 1st embodiment of this invention. It is the figure which showed the conventional semiconductor device typically. It is the figure which showed the conventional semiconductor device typically.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 11, 21 Functional element, 12, 22 Semiconductor substrate, 12a, 22a Through hole, 13, 23 Insulating layer, 14, 24 Electrode, 15, 25 Conductive part, 16, 26 First protection part, 16a, 26a Gap, 17, 27 2nd protection part, 17a, 27a Opening part, 18, 28 Through electrode, 19, 29 Wiring part, 10A Semiconductor device according to first embodiment, 10B Application example according to semiconductor device of first embodiment, 20A 2nd Semiconductor device according to the embodiment, 20B Application example according to the semiconductor device of the second embodiment, 51 First resist, 51a First opening, 52 Second resist, 52a Second opening, 80 Vacuum chamber, 81 Pure water, etc. Bath with 82, Bath with electrodeposition paint, α Solder bump.

Claims (5)

A semiconductor substrate having functional elements disposed on one surface, an electrode disposed on one surface of the semiconductor substrate and electrically connected to the functional elements, and provided from the other surface of the semiconductor substrate toward the electrodes. The through hole, one surface of the semiconductor substrate excluding the region where the functional element is disposed, and the other surface, the insulating layer disposed so as to cover the side surface in the through hole, and the other surface side of the semiconductor substrate A semiconductor device comprising at least a conductive portion that is disposed through an insulating layer and disposed so as to cover the inside of the through-hole,
A first protective part disposed along the conductive part in the through hole, and disposed on the other surface side of the semiconductor substrate so as to cover the insulating layer, the conductive part, and the first protective part. And a gap surrounded by the first protection part and the second protection part at least in the vicinity of the electrode in the through hole. Semiconductor device.   The semiconductor device according to claim 1, wherein the gap is arranged in the entire area of the through hole.   3. The semiconductor device according to claim 2, wherein the first protection part is made of an electrodeposition paint, and the second protection part is made of a solder resist.   4. The semiconductor device according to claim 3, wherein the thickness of the first protection portion is not less than 1 μm and not more than 20 μm. A semiconductor substrate having functional elements disposed on one surface, an electrode disposed on one surface of the semiconductor substrate and electrically connected to the functional elements, and provided from the other surface of the semiconductor substrate toward the electrodes. The through hole, one surface of the semiconductor substrate excluding the region where the functional element is disposed, and the other surface, the insulating layer disposed so as to cover the side surface in the through hole, and the other surface side of the semiconductor substrate A first protective part disposed at least through a conductive layer disposed through an insulating layer and covering the through hole, and disposed along the conductive part in the through hole; and the semiconductor substrate And at least a second protective part arranged to cover the insulating layer, the conductive part, and the first protective part, the first protective part and the second protective part Of the semiconductor device having a gap surrounded by A manufacturing method,
A manufacturing method of a semiconductor device, wherein the first protection part and the second protection part are individually manufactured, and a gap surrounded by the first protection part and the second protection part is formed.

Images