JP4776514B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

Info

Publication number
JP4776514B2
JP4776514B2 JP2006329465A JP2006329465A JP4776514B2 JP 4776514 B2 JP4776514 B2 JP 4776514B2 JP 2006329465 A JP2006329465 A JP 2006329465A JP 2006329465 A JP2006329465 A JP 2006329465A JP 4776514 B2 JP4776514 B2 JP 4776514B2
Authority
JP
Japan
Prior art keywords
film
nitride semiconductor
semiconductor laser
aluminum
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006329465A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007189207A (ja
JP2007189207A5 (https=
Inventor
佳伸 川口
剛 神川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2006329465A priority Critical patent/JP4776514B2/ja
Publication of JP2007189207A publication Critical patent/JP2007189207A/ja
Publication of JP2007189207A5 publication Critical patent/JP2007189207A5/ja
Application granted granted Critical
Publication of JP4776514B2 publication Critical patent/JP4776514B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)
JP2006329465A 2005-12-16 2006-12-06 窒化物半導体レーザ素子 Active JP4776514B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006329465A JP4776514B2 (ja) 2005-12-16 2006-12-06 窒化物半導体レーザ素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005363589 2005-12-16
JP2005363589 2005-12-16
JP2006329465A JP4776514B2 (ja) 2005-12-16 2006-12-06 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2007189207A JP2007189207A (ja) 2007-07-26
JP2007189207A5 JP2007189207A5 (https=) 2008-04-03
JP4776514B2 true JP4776514B2 (ja) 2011-09-21

Family

ID=38344122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006329465A Active JP4776514B2 (ja) 2005-12-16 2006-12-06 窒化物半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP4776514B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP5127642B2 (ja) * 2007-09-28 2013-01-23 三洋電機株式会社 窒化物系半導体レーザ素子
JP5127644B2 (ja) * 2007-09-28 2013-01-23 三洋電機株式会社 窒化物系半導体レーザ素子
JP4621791B2 (ja) 2009-06-11 2011-01-26 シャープ株式会社 窒化物半導体レーザ素子
JP2024019797A (ja) * 2022-08-01 2024-02-14 株式会社日本製鋼所 半導体レーザおよびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021860A (ja) * 1998-07-03 2000-01-21 Hitachi Ltd 半導体装置およびその製造方法
JP4977931B2 (ja) * 2001-03-06 2012-07-18 ソニー株式会社 ＧａＮ系半導体レーザの製造方法
JP2005340625A (ja) * 2004-05-28 2005-12-08 Nichia Chem Ind Ltd 窒化物半導体レーザ素子

Also Published As

Publication number Publication date
JP2007189207A (ja) 2007-07-26

Similar Documents

Publication Publication Date Title
JP5191650B2 (ja) 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) 窒化物半導体レーザ素子
JP4444304B2 (ja) 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5004597B2 (ja) 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5456752B2 (ja) 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP4776514B2 (ja) 窒化物半導体レーザ素子
KR100853241B1 (ko) 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP5766659B2 (ja) 窒化物半導体発光素子
CN100592583C (zh) 氮化物半导体发光元件以及氮化物半导体发光元件的制造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080218

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100817

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100817

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101015

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110105

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110404

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20110408

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20110513

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110628

R150 Certificate of patent or registration of utility model

Ref document number: 4776514

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140708

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350