JP4766835B2 - 静磁気結合を利用した磁性ランダムアクセスメモリセル - Google Patents

静磁気結合を利用した磁性ランダムアクセスメモリセル Download PDF

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JP4766835B2
JP4766835B2 JP2003408344A JP2003408344A JP4766835B2 JP 4766835 B2 JP4766835 B2 JP 4766835B2 JP 2003408344 A JP2003408344 A JP 2003408344A JP 2003408344 A JP2003408344 A JP 2003408344A JP 4766835 B2 JP4766835 B2 JP 4766835B2
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layer
magnetic
random access
access memory
magnetic layer
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JP2005174969A5 (https=
JP2005174969A (ja
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公秀 松山
幸雄 能崎
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  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
JP2003408344A 2003-12-05 2003-12-05 静磁気結合を利用した磁性ランダムアクセスメモリセル Expired - Fee Related JP4766835B2 (ja)

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JP2003408344A JP4766835B2 (ja) 2003-12-05 2003-12-05 静磁気結合を利用した磁性ランダムアクセスメモリセル

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JP2003408344A JP4766835B2 (ja) 2003-12-05 2003-12-05 静磁気結合を利用した磁性ランダムアクセスメモリセル

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JP2005174969A JP2005174969A (ja) 2005-06-30
JP2005174969A5 JP2005174969A5 (https=) 2007-01-18
JP4766835B2 true JP4766835B2 (ja) 2011-09-07

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123363A (ja) * 2005-10-25 2007-05-17 Ind Technol Res Inst 磁気トンネル接合デバイス用シミュレーション回路
JP5224127B2 (ja) * 2007-02-13 2013-07-03 日本電気株式会社 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
US8957486B2 (en) 2009-03-04 2015-02-17 Hitachi, Ltd. Magnetic memory
JP5537554B2 (ja) * 2009-09-28 2014-07-02 株式会社東芝 磁気メモリ
US8558331B2 (en) 2009-12-08 2013-10-15 Qualcomm Incorporated Magnetic tunnel junction device
EP2506265B1 (en) * 2011-03-28 2019-06-05 Crocus Technology Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
JP6972542B2 (ja) * 2016-12-02 2021-11-24 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子および磁気メモリ
US10439133B2 (en) * 2017-03-13 2019-10-08 Samsung Electronics Co., Ltd. Method and system for providing a magnetic junction having a low damping hybrid free layer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6134139A (en) * 1999-07-28 2000-10-17 Hewlett-Packard Magnetic memory structure with improved half-select margin
JP3964818B2 (ja) * 2003-04-01 2007-08-22 株式会社東芝 磁気ランダムアクセスメモリ

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