JP4747593B2 - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor device Download PDFInfo
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- JP4747593B2 JP4747593B2 JP2005032371A JP2005032371A JP4747593B2 JP 4747593 B2 JP4747593 B2 JP 4747593B2 JP 2005032371 A JP2005032371 A JP 2005032371A JP 2005032371 A JP2005032371 A JP 2005032371A JP 4747593 B2 JP4747593 B2 JP 4747593B2
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- Prior art keywords
- epoxy resin
- resin composition
- fatty acid
- phenol
- trimethylolpropane
- Prior art date
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- 229920000647 polyepoxide Polymers 0.000 title claims description 69
- 239000003822 epoxy resin Substances 0.000 title claims description 68
- 239000000203 mixture Substances 0.000 title claims description 35
- 239000004065 semiconductor Substances 0.000 title claims description 34
- -1 fatty acid triester Chemical class 0.000 claims description 20
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 claims description 18
- 239000005011 phenolic resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 150000004671 saturated fatty acids Chemical class 0.000 claims description 13
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 12
- 239000011256 inorganic filler Substances 0.000 claims description 12
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 11
- 239000000194 fatty acid Substances 0.000 claims description 11
- 229930195729 fatty acid Natural products 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 10
- 235000010290 biphenyl Nutrition 0.000 claims description 6
- 239000004305 biphenyl Substances 0.000 claims description 6
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 description 12
- 238000002156 mixing Methods 0.000 description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 239000001993 wax Substances 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 238000005886 esterification reaction Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 238000001721 transfer moulding Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 150000005691 triesters Chemical class 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 2
- 235000021286 stilbenes Nutrition 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- XGINAUQXFXVBND-UHFFFAOYSA-N 1,2,6,7,8,8a-hexahydropyrrolo[1,2-a]pyrimidine Chemical compound N1CC=CN2CCCC21 XGINAUQXFXVBND-UHFFFAOYSA-N 0.000 description 1
- AHBGXHAWSHTPOM-UHFFFAOYSA-N 1,3,2$l^{4},4$l^{4}-dioxadistibetane 2,4-dioxide Chemical compound O=[Sb]O[Sb](=O)=O AHBGXHAWSHTPOM-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- RQEUFEKYXDPUSK-UHFFFAOYSA-N 1-phenylethylamine Chemical compound CC(N)C1=CC=CC=C1 RQEUFEKYXDPUSK-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- VTSDURCEMOELPH-UHFFFAOYSA-N CC=1N=C(NC1)C1=CC=CC=C1.C1(=CC=CC=C1)C=1NC=CN1 Chemical compound CC=1N=C(NC1)C1=CC=CC=C1.C1(=CC=CC=C1)C=1NC=CN1 VTSDURCEMOELPH-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910000411 antimony tetroxide Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 1
- 235000013539 calcium stearate Nutrition 0.000 description 1
- 239000008116 calcium stearate Substances 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 239000004209 oxidized polyethylene wax Substances 0.000 description 1
- 235000013873 oxidized polyethylene wax Nutrition 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- CMLWFCUAXGSMBB-UHFFFAOYSA-N tris(2,6-dimethoxyphenyl)phosphane Chemical compound COC1=CC=CC(OC)=C1P(C=1C(=CC=CC=1OC)OC)C1=C(OC)C=CC=C1OC CMLWFCUAXGSMBB-UHFFFAOYSA-N 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
本発明は、半導体封止用エポキシ樹脂組成物及びこれを用いた半導体装置に関するものである。 The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device using the same.
近年、電子機器の高度化、軽薄短小化が求められる中、半導体素子の高集積化、表面実装化が進んでいる。これに伴い、半導体封止用エポキシ樹脂組成物への要求は、益々過酷なものとなっているのが現状である。特に半導体装置の表面実装に際しては、吸湿した水分が半田処理時の昇温過程で急激に膨張し、半導体素子とエポキシ樹脂組成物の硬化物との界面における密着性を低下させ、半導体装置の信頼性を損なうといった問題が生じている。このためエポキシ樹脂組成物の硬化物と半導体素子間の密着性の改善、ひいては耐半田性の向上は、封止材料にとって重要な課題となっている。 In recent years, as electronic devices have become more sophisticated and lighter, thinner and smaller, semiconductor devices have been highly integrated and surface-mounted. In connection with this, the present condition is that the demand for the epoxy resin composition for semiconductor encapsulation becomes increasingly severe. In particular, when surface mounting a semiconductor device, the moisture that has been absorbed rapidly expands during the temperature rising process during the soldering process, reducing the adhesion at the interface between the semiconductor element and the cured product of the epoxy resin composition. There is a problem of losing sex. For this reason, the improvement of the adhesiveness between the hardened | cured material of an epoxy resin composition and a semiconductor element and by extension, the improvement of solder resistance have become an important subject for a sealing material.
一般に、耐半田性を向上させる手段としては、（１）低粘度の樹脂成分を用いることで無機質充填材の高充填化を可能にし、エポキシ樹脂組成物の硬化物を低熱膨張化、低吸湿化させる（例えば、特許文献１参照。）、（２）吸湿性が少なく可撓性を有する樹脂を使用する等が挙げられる。しかしながら、低粘度成分であるビフェニル型エポキシ樹脂等の結晶性エポキシ樹脂とフェノール樹脂系の硬化剤を用いる場合、硬化物の架橋密度が低くなり、機械的強度や熱時弾性率が低下する。このため、硬化物が金型から離型する際に金型表面に付着したり、硬化物に亀裂や欠陥が生じたりするといった問題が生じることがある。また低吸湿性で可撓性を有するフェノールアラルキル樹脂等を用いる場合、耐半田性は向上するものの熱時の剛性に欠け、硬化速度も遅いため金型からの離型性に劣るという問題があった。 In general, as means for improving solder resistance, (1) it is possible to increase the filling of inorganic fillers by using a low viscosity resin component, and the cured product of the epoxy resin composition has low thermal expansion and low moisture absorption. (For example, refer to Patent Document 1), (2) use of a resin having low hygroscopicity and flexibility. However, when a crystalline epoxy resin such as a biphenyl type epoxy resin which is a low-viscosity component and a phenol resin-based curing agent are used, the crosslinking density of the cured product is lowered, and the mechanical strength and the elastic modulus during heat are lowered. For this reason, when hardened | cured material releases from a metal mold | die, the problem that it adheres to a metal mold | die surface or a crack and a defect arise in hardened | cured material may arise. In addition, when using phenol aralkyl resin having low hygroscopicity and flexibility, there is a problem that although solder resistance is improved, rigidity at the time of heating is lacking and the curing speed is slow, so that the releasability from the mold is poor. It was.
上記問題点に対して、離型性を向上させる手段としては離型剤を多量に配合する方法が挙げられる。しかしながら多量の離型剤の配合は金型からの離型性を向上させる一方で、半導体装置内部の半導体素子やそれを搭載するリードフレームとエポキシ樹脂組成物の硬化物との間の密着性を低下させる。また、離型性が優れるという点で従来用いられてきたポリエチレンワックスは、結晶性が高く、融点が１３０℃程度であり、各成分を加熱混練してエポキシ樹脂組成物を製造する時に十分に溶融せず、分散性に劣るといった問題があり、また十分に融けずに残ったポリエチレンの粒子が流動性を低下させるおそれがあった。このため半導体装置における耐半田性等の信頼性を低下させずに、流動性、離型性、ひいては連続成形性等の成形性に優れた半導体封止用エポキシ樹脂組成物の開発が望まれている。 As a means for improving the releasability with respect to the above problems, a method of blending a large amount of a release agent can be mentioned. However, while a large amount of the release agent improves the mold release from the mold, the adhesion between the semiconductor element inside the semiconductor device and the lead frame on which it is mounted and the cured epoxy resin composition is improved. Reduce. In addition, polyethylene wax that has been conventionally used in terms of excellent releasability has high crystallinity and a melting point of about 130 ° C., and is sufficiently melted when an epoxy resin composition is produced by heating and kneading each component. In other words, there is a problem that the dispersibility is inferior, and there is a possibility that the polyethylene particles remaining without being sufficiently melted may lower the fluidity. For this reason, development of an epoxy resin composition for semiconductor encapsulation excellent in fluidity, releasability, and in turn, moldability such as continuous moldability without reducing reliability such as solder resistance in a semiconductor device is desired. Yes.
本発明は、半導体装置における耐半田性等の信頼性を低下させずに、流動性、離型性、連続成形性に優れた半導体封止用エポキシ樹脂組成物及びこれを用いた半導体装置を提供するものである。 The present invention provides an epoxy resin composition for semiconductor encapsulation excellent in fluidity, releasability, and continuous moldability without reducing reliability such as solder resistance in a semiconductor device, and a semiconductor device using the same To do.
本発明は、
［１］ （Ａ）エポキシ樹脂、（Ｂ）フェノール樹脂、（Ｃ）硬化促進剤、（Ｄ）無機質
充填材、及び（Ｅ）トリメチロールプロパンと炭素数１８〜３６の飽和脂肪酸との脂肪酸トリエステルを必須成分とする半導体封止用エポキシ樹脂組成物であって、前記（Ａ）エポキシ樹脂がビフェニル型エポキシ樹脂であり、前記（Ｂ）フェノール樹脂がフェニレン骨格を有するフェノールアラルキル樹脂であることを特徴とする半導体封止用エポキシ樹脂組成物、
［２］ 上記（Ｅ）トリメチロールプロパンと炭素数１８〜３６の飽和脂肪酸との脂肪酸
トリエステルが、全エポキシ樹脂組成物中に０．０２〜０．５重量％含まれる第［１］項記載の半導体封止用エポキシ樹脂組成物、
［３］ 第［１］項又は［２］項記載の半導体封止用エポキシ樹脂組成物を用いて半導体
素子を封止してなることを特徴とする半導体装置、
である。
The present invention
[1] (A) epoxy resin, (B) phenol resin, (C) curing accelerator, (D) inorganic filler, and (E) fatty acid triester of trimethylolpropane and a saturated fatty acid having 18 to 36 carbon atoms An epoxy resin composition for encapsulating semiconductors, wherein the (A) epoxy resin is a biphenyl type epoxy resin, and the (B) phenol resin is a phenol aralkyl resin having a phenylene skeleton. An epoxy resin composition for semiconductor encapsulation,
[2] Item [1], wherein (E) the fatty acid triester of trimethylolpropane and a saturated fatty acid having 18 to 36 carbon atoms is contained in the total epoxy resin composition in an amount of 0.02 to 0.5% by weight. Epoxy resin composition for semiconductor encapsulation,
[3] A semiconductor device comprising a semiconductor element sealed using the epoxy resin composition for semiconductor sealing according to the item [1] or [2].
It is.
本発明のエポキシ樹脂組成物は、流動性、離型性に優れ、その結果として連続成形性等の成形性に優れることから半導体装置の生産性向上に寄与し、産業上有用である。 The epoxy resin composition of the present invention is excellent in fluidity and releasability and, as a result, excellent in moldability such as continuous moldability, contributes to improving the productivity of semiconductor devices and is industrially useful.
本発明は、エポキシ樹脂、フェノール樹脂、硬化促進剤、無機質充填材を主成分とするエポキシ樹脂組成物に、トリメチロールプロパンと炭素数１８〜３６の飽和脂肪酸との脂肪酸トリエステルを配合することにより、半導体装置における耐半田性等の信頼性を低下させずに、流動性、離型性、連続成形性に優れた半導体封止用エポキシ樹脂組成物及びこれを用いた半導体装置が得られるものである。
以下、本発明について詳細に説明する。
By blending a fatty acid triester of trimethylolpropane and a saturated fatty acid having 18 to 36 carbon atoms into an epoxy resin composition mainly composed of an epoxy resin, a phenol resin, a curing accelerator, and an inorganic filler. An epoxy resin composition for semiconductor encapsulation excellent in fluidity, releasability, and continuous moldability and a semiconductor device using the same can be obtained without reducing reliability such as solder resistance in the semiconductor device. is there.
Hereinafter, the present invention will be described in detail.
本発明で用いられるエポキシ樹脂は、分子中に２個以上のエポキシ基を有するモノマー、オリゴマー、ポリマー全般であり、例えば、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、ビスフェノール型エポキシ樹脂、スチルベン型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂、ナフトール型エポキシ樹脂、アルキル変性トリフェノールメタン型エポキシ樹脂、トリアジン核含有エポキシ樹脂、ジシクロペンタジエン変性フェノール型エポキシ樹脂等が挙げられるが、これらに限定されるものではない。これらのエポキシ樹脂は単独で用いても２種類以上併用しても構わない。これらの内で特に耐半田性が求められる場合、常温では結晶性の固体であるが、融点以上では極めて低粘度の液状となり、無機質充填材を高充填化できるビフェニル型エポキシ樹脂、ビスフェノール型エポキシ樹脂、スチルベン型エポキシ樹脂等が好ましい。その他のエポキシ樹脂も極力粘度の低いものを使用することが望ましい。しかし低粘度のエポキシ樹脂を用いることにより無機質充填材を高充填化できるが、架橋密度が低くなるため離型性に難点があり、後述の離型剤を用いることにより離型性を改善できる。 The epoxy resin used in the present invention is a monomer, oligomer, or polymer in general having two or more epoxy groups in the molecule. For example, phenol novolac type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, bisphenol type Epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, phenol aralkyl type epoxy resin, naphthol type epoxy resin, alkyl modified triphenolmethane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene modified phenol type epoxy resin, etc. However, it is not limited to these. These epoxy resins may be used alone or in combination of two or more. Among these, when solder resistance is particularly required, it is a crystalline solid at room temperature, but becomes a very low-viscosity liquid above the melting point, and can be highly filled with inorganic fillers. Biphenyl type epoxy resins and bisphenol type epoxy resins Stilbene type epoxy resins are preferred. It is desirable to use other epoxy resins having a viscosity as low as possible. However, although an inorganic filler can be highly filled by using a low-viscosity epoxy resin, there is a difficulty in releasability because the crosslinking density is lowered, and releasability can be improved by using a release agent described later.
本発明で用いられるフェノール樹脂は、分子中に２個以上のフェノール性水酸基を有するモノマー、オリゴマー、ポリマー全般であり、例えば、フェノールノボラック樹脂、クレゾールノボラック樹脂、トリフェノールメタン樹脂、テルペン変性フェノール樹脂、ジシクロペンタジエン変性フェノール樹脂、フェノールアラルキル（フェニレン、ビフェニレン骨格を有する）樹脂、ナフトールアラルキル（フェニレン、ビフェニレン骨格を有する）樹脂等が挙げられるが、これらに限定されるものではない。これらのフェノール樹脂は単独で用いても２種類以上併用しても構わない。これらの内で特に耐半田性が求められる場合、エポキシ樹脂と同様に低粘度の樹脂が無機質充填材の高充填化でき、更に可撓性、低吸湿化のためには、フェノールアラルキル（フェニレン骨格を有する）樹脂の使用が好ましい。低粘度や可撓性を有するフェノール樹脂は、架橋密度が低くなるため離型性に難点があり、後述の離型剤を用いることにより離型性を改善できる。
本発明に用いられる全エポキシ樹脂のエポキシ基と全フェノール樹脂のフェノール性水酸基の当量比としては、成形性、耐半田性等の点から０．５〜２が好ましく、特に０．７〜１．３が望ましい。
The phenol resin used in the present invention is a monomer, oligomer, or polymer in general having two or more phenolic hydroxyl groups in the molecule. For example, a phenol novolak resin, a cresol novolak resin, a triphenolmethane resin, a terpene-modified phenol resin, Examples include, but are not limited to, dicyclopentadiene-modified phenol resins, phenol aralkyl (phenylene and biphenylene skeleton) resins, and naphthol aralkyl (phenylene and biphenylene skeleton) resins. These phenolic resins may be used alone or in combination of two or more. Of these, when solder resistance is particularly required, a low-viscosity resin can be filled with an inorganic filler in the same manner as an epoxy resin, and phenol aralkyl ( phenylene skeleton) is used for flexibility and low moisture absorption. Use of a resin is preferred. The phenol resin having low viscosity and flexibility has a difficulty in releasability because of its low crosslinking density, and the releasability can be improved by using a release agent described later.
The equivalent ratio of the epoxy groups of all epoxy resins and the phenolic hydroxyl groups of all phenol resins used in the present invention is preferably 0.5 to 2, particularly 0.7 to 1. 3 is desirable.
本発明で用いられる硬化促進剤としては、前記エポキシ樹脂とフェノール樹脂との架橋反応の触媒となり得るものを指し、例えばトリエチルアミン、トリブチルアミン、ベンジルジメチルアミン、α−メチルベンジルアミン等の３級アミン系化合物、１，８−ジアザビシクロ（５，４，０）ウンデセン−７、１，５−ジアザビシクロ（４，３，０）ノネン、７−メチル−１，５，７−トリアザビシクロ（４，４，０）デセン−５等のアミジン系化合物、トリフェニルホスフィン、トリス（２，６−ジメトキシフェニル）ホスフィン、トリス（４−アルキルフェニル）ホスフィン、トリアルキルホスフィン、テトラフェニルホスホニウム、テトラフェニルボレート塩等の有機リン系化合物、２−メチルイミダゾール、２−フェニルイミダゾール、２−フェニル−４−メチルイミダゾール、２−ウンデシルイミダゾール等のイミダゾール化合物等が挙げられるが、これらに限定されるものではない。これらの硬化促進剤は単独で用いても２種類以上併用しても構わない。 The curing accelerator used in the present invention refers to one that can serve as a catalyst for the crosslinking reaction between the epoxy resin and the phenol resin, for example, a tertiary amine system such as triethylamine, tributylamine, benzyldimethylamine, α-methylbenzylamine, etc. Compound, 1,8-diazabicyclo (5,4,0) undecene-7, 1,5-diazabicyclo (4,3,0) nonene, 7-methyl-1,5,7-triazabicyclo (4,4, 0) Amidine compounds such as decene-5, organic compounds such as triphenylphosphine, tris (2,6-dimethoxyphenyl) phosphine, tris (4-alkylphenyl) phosphine, trialkylphosphine, tetraphenylphosphonium, tetraphenylborate salts Phosphorus compounds, 2-methylimidazole, 2-phenylimidazole 2-phenyl-4-methylimidazole, 2-imidazole compounds of undecyl imidazole and the like, but not limited thereto. These curing accelerators may be used alone or in combination of two or more.
本発明で用いられる無機質充填材としては、例えば非結晶性シリカ、結晶性シリカ、アルミナ、酸化チタン、酸化マグネシウム、窒化珪素、窒化アルミニウム、珪酸カルシウム、炭酸カルシウム、炭酸マグネシウム等が挙げられるが、これらに限定されるものではない。これらの無機質充填材は単独で用いても２種類以上併用しても構わない。無機質充填材の形状としては、球状、破砕状等のものを選択可能であるが、配合量を高め、かつエポキシ樹脂組成物の溶融粘度の上昇を抑えるためには、主に球状のものが好ましい。更に配合量を高めるためには、無機質充填材の粒度分布がより広くなるように調整することが望ましい。無機質充填材の配合量としては、機械的強度、低吸湿性、低熱膨張性といった点から全エポキシ樹脂組成物中７０〜９５重量％が好ましい。 Examples of the inorganic filler used in the present invention include amorphous silica, crystalline silica, alumina, titanium oxide, magnesium oxide, silicon nitride, aluminum nitride, calcium silicate, calcium carbonate, and magnesium carbonate. It is not limited to. These inorganic fillers may be used alone or in combination of two or more. As the shape of the inorganic filler, a spherical shape, a crushed shape, or the like can be selected. However, in order to increase the blending amount and suppress the increase in the melt viscosity of the epoxy resin composition, a spherical shape is mainly preferable. . In order to further increase the blending amount, it is desirable to adjust so that the particle size distribution of the inorganic filler becomes wider. The blending amount of the inorganic filler is preferably 70 to 95% by weight in the total epoxy resin composition in terms of mechanical strength, low hygroscopicity, and low thermal expansion.
本発明で用いられるトリメチロールプロパンと炭素数１８〜３６の飽和脂肪酸との脂肪酸トリエステルは、エポキシ樹脂組成物に充分な流動性を付与し、更に離型性を向上する機能を有している。トリメチロールプロパンと炭素数１８〜３６の飽和脂肪酸との脂肪酸トリエステルは、トリメチロールプロパンと炭素数１８〜３６の飽和脂肪酸とのエステル化反応によって得られる。通常、エステル化反応は両成分が溶解しうる溶媒中にて，バラトルエンスルホン酸などの有機酸、硫酸、塩酸などの無機酸、アルカリ、テトラアルコキシチタン等の触媒を用いて行うのが一般的であるが、必ずしもこれに限定されるものではない。また、トリメチロールプロパンと炭素数１８〜３６の飽和脂肪酸との脂肪酸トリエステルとしては、トリメチロールプロパンのトリモンタン酸エステル等が挙げられるが、これらはクラリアントジャパン株式会社より市販されており市場より容易に入手できる。
更に、トリメチロールプロパンのトリステアリン酸エステルは、BASF Japan Ltd.等より市販されているトリメチロールプロパン、及び日本油脂株式会社等より市販されているステアリン酸を用い、前述エステル化反応を用いて容易に合成することも可能である。
エステル化に用いる飽和脂肪酸が、炭素数１７以下では十分な離型性が得られないため好ましくない。炭素数３７以上では分子量が大き過ぎるため流動性が低下したり、過度に染み出すことにより金型汚れの原因となるので好ましくない。またモノエステル、ジエステルでは、残存する水酸基の影響によってエポキシ樹脂組成物の硬化物の耐湿性が低下し、その結果として耐半田性に悪影響を及ぼすので好ましくない。なお、本発明での飽和脂肪酸の炭素数とは、飽和脂肪酸中のアルキル基とカルボキシル基の炭素数を合計したものを指す。
The fatty acid triester of trimethylolpropane and a saturated fatty acid having 18 to 36 carbon atoms used in the present invention has a function of imparting sufficient fluidity to the epoxy resin composition and further improving releasability. . A fatty acid triester of trimethylolpropane and a saturated fatty acid having 18 to 36 carbon atoms is obtained by an esterification reaction of trimethylolpropane and a saturated fatty acid having 18 to 36 carbon atoms. Usually, the esterification reaction is carried out in a solvent in which both components can be dissolved, using an organic acid such as valatoluene sulfonic acid, an inorganic acid such as sulfuric acid and hydrochloric acid, a catalyst such as alkali and tetraalkoxytitanium. However, it is not necessarily limited to this. Examples of the fatty acid triester of trimethylolpropane and a saturated fatty acid having 18 to 36 carbon atoms include trimontanic acid ester of trimethylolpropane, which are commercially available from Clariant Japan Co., Ltd. Available.
Furthermore, tristearol ester of trimethylolpropane can be easily obtained by using the above esterification reaction using trimethylolpropane commercially available from BASF Japan Ltd. and stearic acid commercially available from Nippon Oil & Fats Co., Ltd. It is also possible to synthesize.
If the saturated fatty acid used for esterification is 17 or less carbon atoms, it is not preferable because sufficient releasability cannot be obtained. If the number of carbon atoms is 37 or more, the molecular weight is too large, so that the fluidity is lowered or excessively exuded, which causes mold contamination, which is not preferable. Monoesters and diesters are not preferable because the moisture resistance of the cured product of the epoxy resin composition is lowered by the influence of the remaining hydroxyl groups, and as a result, the solder resistance is adversely affected. In addition, the carbon number of the saturated fatty acid in the present invention refers to the sum of the carbon number of the alkyl group and the carboxyl group in the saturated fatty acid.
本発明では、トリメチロールプロパンと炭素数１８〜３６の飽和脂肪酸との脂肪酸トリエステルを用いることによる特徴を損なわない範囲で他の離型剤を併用することもできる。例えばカルナバワックス、ライスワックス等の天然ワックス、ポリエチレンワックス、酸化ポリエチレンワックス、アミドワックス等の合成ワックス、ステアリン酸亜鉛、ステアリン酸カルシウム等の高級脂肪酸の金属塩類等が挙げられる。 In this invention, another mold release agent can also be used together in the range which does not impair the characteristic by using the fatty acid triester of a trimethylol propane and a C18-C36 saturated fatty acid. Examples thereof include natural waxes such as carnauba wax and rice wax, synthetic waxes such as polyethylene wax, oxidized polyethylene wax and amide wax, and metal salts of higher fatty acids such as zinc stearate and calcium stearate.
本発明のエポキシ樹脂組成物は、（Ａ）〜（Ｅ）成分を必須成分とするが、これ以外に必要に応じてアミノシラン、エポキシシラン、メルカプトシラン等のシランカップリング剤、臭素化エポキシ樹脂、金属水酸化物、無機リン、有機リン系化合物等の難燃剤、三酸化アンチモン、四酸化アンチモン、五酸化アンチモン等の難燃助剤、カーボンブラック、ベンガラ等の着色剤、ハイドロタルサイト系、ビスマス系等のイオン補捉剤、シリコーンオイル、シリコーンゴム、変性ニトリルゴム、変性ポリブタジエンゴム等の低応力剤、酸化防止剤等の各種添加剤を適宜配合してもよい。
本発明のエポキシ樹脂組成物は、（Ａ）〜（Ｅ）成分及びその他の添加剤等をミキサー等で混合後、加熱ニーダ、熱ロール、押し出し機等を用いて加熱混練を行い、次いで冷却、粉砕して得られる。
本発明のエポキシ樹脂組成物を用いて半導体素子等の電子部品を封止し、半導体装置を製造するには、トランスファーモールド、コンプレッションモールド、インジェクションモールド等の従来からの成形方法で硬化成形すればよい。
The epoxy resin composition of the present invention comprises the components (A) to (E) as essential components, but in addition to this, a silane coupling agent such as aminosilane, epoxysilane, mercaptosilane, brominated epoxy resin, Flame retardants such as metal hydroxides, inorganic phosphorus and organic phosphorus compounds, flame retardant aids such as antimony trioxide, antimony tetroxide and antimony pentoxide, colorants such as carbon black and bengara, hydrotalcite, bismuth Various additives such as a low-stress agent such as a silicone oil, silicone rubber, modified nitrile rubber, and modified polybutadiene rubber, and an antioxidant may be appropriately blended.
The epoxy resin composition of the present invention is prepared by mixing the components (A) to (E) and other additives with a mixer or the like, then performing heat kneading using a heating kneader, a heat roll, an extruder, etc., and then cooling, It is obtained by grinding.
In order to seal an electronic component such as a semiconductor element by using the epoxy resin composition of the present invention and manufacture a semiconductor device, it may be cured by a conventional molding method such as transfer molding, compression molding, injection molding, or the like. .
以下、本発明を実施例で具体的に説明するが、本発明はこれらに限定されるものではない。配合割合は重量部とする。
実施例１
ビフェニル型エポキシ樹脂（ジャパンエポキシレジン（株）製、ＹＸ４０００ＨＫ、融点１０５℃、エポキシ当量１９１） ６．４重量部
フェノールアラルキル樹脂（三井化学（株）製、ＸＬＣ−ＬＬ、軟化点７９℃、水酸基当量１７４） ５．８重量部
１、８−ジアザビシクロ（５、４、０）ウンデセン−７（以下、ＤＢＵと略記）
０．２重量部
球状シリカ（平均粒径２０μｍ） ８７．０重量部
化合物１：トリメチロールプロパンとモンタン酸から成るトリエステル
０．３重量部
カーボンブラック ０．３重量部
をミキサーを用いて混合した後、表面温度が９５℃と２５℃の２軸ロールを用いて２０回混練し、得られた混練物シートを冷却後粉砕して、エポキシ樹脂組成物とした。得られたエポキシ樹脂組成物の特性を以下の方法で評価した。結果を表１に示す。
EXAMPLES Hereinafter, although an Example demonstrates this invention concretely, this invention is not limited to these. The blending ratio is parts by weight.
Example 1
Biphenyl type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., YX4000HK, melting point 105 ° C., epoxy equivalent 191) 6.4 parts by weight Phenol aralkyl resin (manufactured by Mitsui Chemicals, Inc., XLC-LL, softening point 79 ° C., hydroxyl equivalent) 174) 5.8 parts by weight 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter abbreviated as DBU)
0.2 parts by weight Spherical silica (average particle size 20 μm) 87.0 parts by weight Compound 1: Triester composed of trimethylolpropane and montanic acid
0.3 parts by weight Carbon black 0.3 parts by weight was mixed using a mixer, then kneaded 20 times using a biaxial roll having surface temperatures of 95 ° C. and 25 ° C., and the resulting kneaded material sheet was cooled. An epoxy resin composition was obtained by pulverization. The characteristics of the obtained epoxy resin composition were evaluated by the following methods. The results are shown in Table 1.
評価方法
スパイラルフロー：ＥＭＭＩ−１−６６に準じたスパイラルフロー測定用の金型を用いて、金型温度１７５℃、注入圧力６．９ＭＰａ、硬化時間１２０秒で測定した。単位はｃｍ。
離型荷重：トランスファー成形機を用いて、金型温度１７５℃、注入圧力９．８ＭＰａ、硬化時間９０秒で直径１５ｍｍ、厚さ１．５ｍｍの円盤状の成形品を１０ショット連続で成形し、１０ショット目の成形品を金型から抜き出す際に必要な荷重をプッシュ／プルゲージにて測定した。尚、測定は各品番５回づつ行い、その平均値を離型荷重の値とした。単位はＮ。
連続成形性：トランスファー成形機を用いて、金型温度１７５℃、注入圧力９．３ＭＰａ、硬化時間６０秒で１６０ｐＱＦＰ（２４ｍｍ×２４ｍｍ×１．４ｍｍ厚さ）を連続で成形した。未充填、ゲート詰まり、エアベント詰まり、金型へのパッケージ取られ、カル落ち等の成形不良が発生するまでのショット数を示した。
耐半田性：トランスファー成形機を用いて、金型温度１７５℃、注入圧力９．３ＭＰａ、硬化時間６０秒で８０ｐＱＦＰ（１４ｍｍ×２０ｍｍ×２．７ｍｍ厚さ）を成形、１７５℃で４時間ポストキュアした後、８５℃、相対湿度８５％の恒温恒湿層に１６８時間放置、ＩＲリフロー処理して耐半田性を調べた。処理後にクラック、剥離の発生がないものを合格とした（ｎ＝３６）
Evaluation method Spiral flow: Using a mold for spiral flow measurement according to EMMI-1-66, measurement was performed at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 120 seconds. The unit is cm.
Mold release load: Using a transfer molding machine, a disk-shaped molded product having a mold temperature of 175 ° C., an injection pressure of 9.8 MPa, a curing time of 90 seconds and a diameter of 15 mm and a thickness of 1.5 mm was molded continuously for 10 shots. The load required when the molded product of the 10th shot was extracted from the mold was measured with a push / pull gauge. The measurement was performed 5 times for each product number, and the average value was taken as the value of the release load. The unit is N.
Continuous moldability: 160pQFP (24 mm × 24 mm × 1.4 mm thickness) was continuously molded using a transfer molding machine at a mold temperature of 175 ° C., an injection pressure of 9.3 MPa, and a curing time of 60 seconds. The number of shots until molding defects such as unfilled, gate clogged, air vent clogged, packaged in a mold, and cull dropping were shown.
Solder resistance: Molding 80pQFP (14mm x 20mm x 2.7mm thickness) at a mold temperature of 175 ° C, injection pressure of 9.3MPa, curing time of 60 seconds using transfer molding machine, post cure at 175 ° C for 4 hours After that, it was left for 168 hours in a constant temperature and humidity layer at 85 ° C. and a relative humidity of 85%, and IR reflow treatment was conducted to examine the solder resistance. Those that did not crack or peel after the treatment were regarded as acceptable (n = 36).
実施例２〜４、７〜９、参考例１〜２、比較例１〜４
実施例１以外に用いた各成分は、以下の通りである。
オルソクレゾールノボラック型エポキシ樹脂（軟化点５５℃、エポキシ当量１９６）
ジシクロペンタジエン変性フェノール型エポキシ樹脂（軟化点６０℃、エポキシ当量２６３）
フェノールノボラック樹脂（軟化点８１℃、水酸基当量１０５）
化合物２：トリメチロールプロパンとステアリン酸のトリエステル
化合物３：トリメチロールプロパンとモンタン酸のモノエステル
化合物４：トリメチロールプロパンとウンデシル酸のトリエステル
化合物５：トリメチロールプロパンと炭素数４０の脂肪酸のトリエステル
ステアリン酸亜鉛（融点１２５℃）
ポリエチレン（融点１３０℃）
表１、表２の配合に従い、実施例１と同様にしてエポキシ樹脂組成物を得、実施例１と同様にして評価した。結果を表１、表２に示す。
Examples 2-4 , 7-9 , Reference Examples 1-2, Comparative Examples 1-4
Each component used in addition to Example 1 is as follows.
Orthocresol novolac type epoxy resin (softening point 55 ° C., epoxy equivalent 196)
Dicyclopentadiene-modified phenolic epoxy resin (softening point 60 ° C., epoxy equivalent 263)
Phenol novolac resin (softening point 81 ° C, hydroxyl group equivalent 105)
Compound 2: Trimethylolpropane and stearic acid triester Compound 3: Trimethylolpropane and montanic acid monoester compound 4: Trimethylolpropane and undecyl acid triester Compound 5: Trimethylolpropane and 40-carbon fatty acid triester Zinc ester stearate (melting point 125 ° C)
Polyethylene (melting point 130 ° C)
According to the composition of Table 1 and Table 2, an epoxy resin composition was obtained in the same manner as in Example 1 and evaluated in the same manner as in Example 1. The results are shown in Tables 1 and 2.
本発明によると、半導体装置における耐半田性等の信頼性を低下させずに、流動性、離型性、連続成形性に優れた半導体封止用エポキシ樹脂組成物が得られることから、半導体装置の生産性向上に寄与することができ、産業上極めて有用である。 According to the present invention, an epoxy resin composition for semiconductor encapsulation excellent in fluidity, releasability, and continuous moldability can be obtained without reducing reliability such as solder resistance in the semiconductor device. It can contribute to the improvement of productivity and is extremely useful industrially.
Claims (3)
A semiconductor device obtained by sealing a semiconductor element using the epoxy resin composition for semiconductor sealing according to claim 1.
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