JP4727024B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4727024B2
JP4727024B2 JP2000216697A JP2000216697A JP4727024B2 JP 4727024 B2 JP4727024 B2 JP 4727024B2 JP 2000216697 A JP2000216697 A JP 2000216697A JP 2000216697 A JP2000216697 A JP 2000216697A JP 4727024 B2 JP4727024 B2 JP 4727024B2
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Prior art keywords
substrate
semiconductor device
fixed substrate
manufacturing
film
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JP2000216697A
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Japanese (ja)
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JP2002031818A (ja
JP2002031818A5 (enExample
Inventor
舜平 山崎
徹 高山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000216697A priority Critical patent/JP4727024B2/ja
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Publication of JP2002031818A5 publication Critical patent/JP2002031818A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

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  • Engineering & Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Lasers (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2000216697A 2000-07-17 2000-07-17 半導体装置の作製方法 Expired - Lifetime JP4727024B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000216697A JP4727024B2 (ja) 2000-07-17 2000-07-17 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000216697A JP4727024B2 (ja) 2000-07-17 2000-07-17 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009181178A Division JP5292217B2 (ja) 2009-08-04 2009-08-04 半導体装置の作製方法及び電子書籍の作製方法

Publications (3)

Publication Number Publication Date
JP2002031818A JP2002031818A (ja) 2002-01-31
JP2002031818A5 JP2002031818A5 (enExample) 2007-08-23
JP4727024B2 true JP4727024B2 (ja) 2011-07-20

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Family Applications (1)

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JP2000216697A Expired - Lifetime JP4727024B2 (ja) 2000-07-17 2000-07-17 半導体装置の作製方法

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JP (1) JP4727024B2 (enExample)

Cited By (2)

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KR101585722B1 (ko) * 2013-12-24 2016-01-14 주식회사 포스코 전자 소자가 형성된 금속기판의 제조방법 및 이에 의해 제조된 전자 소자가 형성된 금속기판
WO2017045202A1 (en) * 2015-09-18 2017-03-23 Boe Technology Group Co., Ltd. Method of manufacturing flexible display device

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* Cited by examiner, † Cited by third party
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CN102290422A (zh) 2003-01-15 2011-12-21 株式会社半导体能源研究所 显示装置及其制造方法、剥离方法及发光装置的制造方法
US8783577B2 (en) 2005-03-15 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device having the same
KR101272097B1 (ko) 2005-06-03 2013-06-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 집적회로 장치 및 그의 제조방법
US7820495B2 (en) 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
DE102005039365B4 (de) * 2005-08-19 2022-02-10 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
JP2007251080A (ja) * 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法
JP2008072087A (ja) * 2006-08-16 2008-03-27 Kyoto Univ 半導体装置および半導体装置の製造方法、ならびに表示装置
US7968382B2 (en) 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP5408848B2 (ja) * 2007-07-11 2014-02-05 株式会社ジャパンディスプレイ 半導体装置の製造方法
CN101785086B (zh) * 2007-09-20 2012-03-21 夏普株式会社 显示装置的制造方法和叠层构造体
US8236125B2 (en) 2008-02-28 2012-08-07 Sharp Kabushiki Kaisha Method for manufacturing thin film multilayer device, method for manufacturing display device, and thin film multilayer device
KR102112799B1 (ko) * 2008-07-10 2020-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 전자기기
KR101659925B1 (ko) * 2008-10-03 2016-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
KR101056431B1 (ko) * 2010-06-04 2011-08-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 이를 구비한 표시 장치 및 그 제조 방법
JP2013080857A (ja) * 2011-10-05 2013-05-02 Dainippon Printing Co Ltd 固体素子を有するデバイスの製造方法
JP5608694B2 (ja) * 2012-03-02 2014-10-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5764616B2 (ja) * 2013-06-10 2015-08-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI658597B (zh) * 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置
US10177347B2 (en) * 2015-07-01 2019-01-08 Sharp Kabushiki Kaisha Method for manufacturing display device
JP6166761B2 (ja) * 2015-10-26 2017-07-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6517678B2 (ja) * 2015-12-11 2019-05-22 株式会社Ｓｃｒｅｅｎホールディングス 電子デバイスの製造方法
JP6564555B1 (ja) * 2018-02-27 2019-08-21 堺ディスプレイプロダクト株式会社 フレキシブルｏｌｅｄデバイス、その製造方法及び支持基板
US11183674B2 (en) 2018-02-27 2021-11-23 Sakai Display Products Corporation Method for manufacturing flexible OLED device and support substrate
JP6914227B2 (ja) * 2018-06-15 2021-08-04 信越化学工業株式会社 マイクロディスプレイ用基板の製造方法
JP6772348B2 (ja) * 2019-07-26 2020-10-21 堺ディスプレイプロダクト株式会社 フレキシブルｏｌｅｄデバイス、その製造方法及び支持基板
CN114823543B (zh) * 2022-07-01 2022-09-20 惠科股份有限公司 显示面板制备方法及显示面板

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JPH0635569B2 (ja) * 1985-09-04 1994-05-11 バンドー化学株式会社 感圧接着性シート
JPS63107073A (ja) * 1986-06-26 1988-05-12 Matsushita Electric Ind Co Ltd 薄膜太陽電池の製造法
JPH07772B2 (ja) * 1989-02-20 1995-01-11 バンドー化学株式会社 感圧接着剤組成物
JP2889719B2 (ja) * 1991-03-25 1999-05-10 三洋電機株式会社 光起電力装置の製造方法
JP2581431B2 (ja) * 1993-12-28 1997-02-12 日本電気株式会社 多層配線基板の製造方法
JP3552805B2 (ja) * 1994-08-22 2004-08-11 大日本印刷株式会社 フィルム液晶パネルの製造方法
JP4619461B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
JPH1161049A (ja) * 1997-08-19 1999-03-05 Sekisui Chem Co Ltd 光剥離型粘着剤組成物及び光剥離型粘着テープ
JP2000196243A (ja) * 1998-12-28 2000-07-14 Fujitsu Ltd フレキシブル多層回路基板の製造方法
JP2000243943A (ja) * 1999-02-23 2000-09-08 Seiko Epson Corp 半導体装置の製造方法
JP2001267578A (ja) * 2000-03-17 2001-09-28 Sony Corp 薄膜半導体装置及びその製造方法
JP4869471B2 (ja) * 2000-07-17 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101585722B1 (ko) * 2013-12-24 2016-01-14 주식회사 포스코 전자 소자가 형성된 금속기판의 제조방법 및 이에 의해 제조된 전자 소자가 형성된 금속기판
WO2017045202A1 (en) * 2015-09-18 2017-03-23 Boe Technology Group Co., Ltd. Method of manufacturing flexible display device
US10249527B2 (en) 2015-09-18 2019-04-02 Boe Technology Group Co., Ltd. Method of manufacturing flexible display device

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