JP4722679B2 - Electrode manufacturing method and device manufacturing method - Google Patents

Description

  The present invention relates to a method for manufacturing a nano-order microelectrode and a method for manufacturing an element using the microelectrode.

In recent years, in addition to conventional thin film transistors (TFTs), research on electronic devices using conductive molecules and single-electron tunneling has been actively conducted (Non-patent Document 1).
Such so-called molecular devices and single-electron devices are next-generation devices that are expected to have low power consumption and high integration. It is necessary to perform electrical measurements on molecular materials and nanoparticles used in these devices.
For this reason, these materials are placed in the gaps of the electrodes for measurement. However, in order to measure characteristics corresponding to molecular devices and nanoparticles, there is an increasing need to generate electrodes having minute gaps.

For example, as a conventional method for manufacturing an electrode having a minute gap, as shown in Non-Patent Document 2, a width wm mask layer provided at a predetermined distance h on a substrate is used, as shown in FIG. As described above, there is a method of depositing a material from an oblique direction (angles θ ₁ and θ ₂ ) through the mask layer to form a thin film pattern having a gap immediately below the mask layer.
According to this method, since an electrode material or the like is obliquely deposited on the substrate from two directions with a mask fixed at a position away from the substrate, a minute gap Sm (= wm−h (tan θ) exceeding the resolution of lithography is obtained. ₁ + tan θ ₂ )) can be formed. Further, if this method is used, an electrode having a uniform thickness can be formed, and the gap between the electrodes can be controlled by adjusting the deposition angle and the size of the mask pattern.
Hongkun Park, etall, "Nanomechanical oscillations in a single-C60 transistor", Nature (London), Vol. 407, 57-60 (2000). GJDolan: “Offset masks for lift-off photoprocessing”, Applied Pysics Letters, Vol.31, No.5, pp.337-339, 1 September 1977

However, the conventional method can form a pattern having a minute gap, but has a problem that the gap cannot be directly observed because the formed gap is directly under the mask layer. Yes.
In addition, when the conventional method is used in a process of creating an element, it is necessary to deposit another material between patterns, for example, electrodes. However, since the gap is directly under the mask layer, the gap is formed after the gap is formed. However, it has a drawback that it is difficult to insert another material into the gap portion. For example, it is possible to remove the mask layer to expose the gap to form another material, but removing the mask layer is troublesome, and the material of the mask layer contaminates the gap, electrodes, and substrate during the removal. there's a possibility that.

  The present invention has been made in view of such circumstances, and provides a manufacturing method for manufacturing a gap between electrodes not directly under a mask layer but directly under an opening region of the mask layer, and an element using a process of a minute gap It aims at providing the manufacturing method of.

The electrode manufacturing method of the present invention is an electrode manufacturing method for forming an electrode having a minute gap by using a mask layer having an opening, from a first angle direction with respect to an axis perpendicular to the mask layer surface, In a two-dimensional plane formed by a first vapor deposition step of depositing an electrode material on the substrate through the first opening and the axis and the first angular direction, the direction is opposite to the first angle with respect to the axis. forming a support layer from a second angular orientation, wherein the first electrode material through the opening have a second deposition step of depositing on a substrate, the step of forming the mask layer, on the substrate A supporting layer forming step, a mask layer forming step for forming a mask layer on the supporting layer, a resist coating step for applying a resist on the mask layer, and an opening pattern forming step for forming an opening pattern in the resist Etching using the resist as a mask An opening forming region for forming a first opening in the mask layer, and a support layer etching step for etching the support layer from the first opening until at least the substrate is exposed, The mask layer further includes a second opening and a third opening at a predetermined distance on both sides of the first opening, and the first angle θ ₁ is 0 ° < θ ₁ <90 °, the second angle θ ₂ is 0 ° <θ ₂ <90 °, the width of the first opening of the mask layer is w _1, and the second opening width w ₂ of _the width of the third opening and w _3, the distance between the first and second openings d _1, the distance between the second and third openings is d _2, When the thickness of the support layer is h,
w ₁ <h (tan θ ₁ + tan θ ₂ ),
w ₂ > h (tan θ ₁ + tan θ ₂ ),
w ₃ > h (tan θ ₁ + tan θ ₂ ),
d ₁ <h (tan θ ₁ + tan θ ₂ ),
d ₂ <h (tan θ ₁ + tan θ ₂ ),
All of the conditional expressions are satisfied .

In the electrode manufacturing method of the present invention, the mask layer is made of a material containing Si, the support layer is made of a material containing SiO ₂ , and the substrate is made of Si having an oxide film or an oxynitride film on the surface. Features.

The electrode manufacturing method of the present invention is an electrode manufacturing method for forming an electrode having a minute gap by using a mask layer having an opening, from a first angle direction with respect to an axis perpendicular to the mask layer surface, In a two-dimensional plane formed by a first vapor deposition step of depositing an electrode material on the substrate through the first opening and the axis and the first angular direction, the direction is opposite to the first angle with respect to the axis. A second vapor deposition step of vapor-depositing an electrode material on the substrate through the first opening from the second angular direction, and the step of forming the mask layer includes a resist layer on the substrate with a resist. A support layer forming step of forming a mask, a mask layer forming step of forming a mask layer on the support layer, and an exposure step of performing exposure for forming a first opening on the support layer and the mask layer; A first developing step for forming a first opening in the mask layer; And a second development step of removing the support layer so that at least the surface of the substrate is exposed by additional development from the opening of 1, and the resist used for the support layer and the mask layer is a positive resist. There, Ri resist high sensitivity der compared to the resist used for the mask layer used for the supporting layer, the step of forming the mask layer, and a supporting layer formation step of forming a supporting layer on the substrate, to the support layer A mask layer forming step for forming a mask layer; a resist coating step for applying a resist on the mask layer; an opening pattern forming step for forming an opening pattern in the resist; etching using the resist as a mask; An opening forming region for forming a first opening in the layer, and a support layer etching for etching the support layer from the first opening until at least the substrate is exposed. A masking step, wherein the mask layer further has a second opening and a third opening on both sides of the first opening, and has a predetermined distance. The angle θ ₁ is in the range of 0 ° <θ ₁ <90 °, the second angle θ ₂ is 0 ° <θ ₂ <90 °, and the width of the first opening of the mask layer is w ₁ The width of the second opening is w ₂ , the width of the third opening is w ₃ , the distance between the first and second openings is d ₁ , and the distance between the second and third openings When the distance is d ₂ and the thickness of the support layer is h,
w ₁ <h (tan θ ₁ + tan θ ₂ ),
w ₂ > h (tan θ ₁ + tan θ ₂ ),
w ₃ > h (tan θ ₁ + tan θ ₂ ),
d ₁ <h (tan θ ₁ + tan θ ₂ ),
d ₂ <h (tan θ ₁ + tan θ ₂ ),
The conditional expressions is characterized that you have all satisfied.

  The element manufacturing method of the present invention includes a step of forming a micro-gap electrode using any one of the above-described electrode manufacturing methods, and a step of depositing a material different from the electrode between the electrodes. To do.

  As described above, according to the present invention, since the minute gap of the electrode or the pad electrode can be formed in the region immediately below the opening of the mask layer, the width and shape of the minute gap of the electrode can be observed, and It is possible to easily deposit another material between the electrodes, and to evaluate the characteristics and control the characteristics of this different material by light and electromagnetic waves, and to easily realize a molecular device, a thin film transistor, etc. using this minute gap. it can.

Hereinafter, a similar image search system according to an embodiment of the present invention will be described with reference to the drawings.
<First Embodiment>
With reference to FIG. 1, the manufacturing method of the micro gap | interval by the 1st Embodiment of this invention is demonstrated. FIG. 1 is a conceptual diagram illustrating a method of forming an electrode having a minute gap by providing an opening in a mask layer and irradiating the opening with a deposition material obliquely from different angles.
In the conventional method, as already described, the gap of the electrode (gap width Sm = wm−h (tan θ ₁ + tan θ ₂ )) is formed in the portion that is behind the mask and does not reach the vapor deposition material. The shape of the electrodes cannot be observed, and no new material can be deposited between the electrodes.

On the other hand, according to the method for forming a minute gap according to the first embodiment of the present invention, as shown in FIG. 1, an opening having a width w is provided in a mask layer located at a distance h from the substrate surface. The material is deposited from the first angle θ ₁ and the second angle θ ₂ so that a gap is formed immediately below the opening from the opening, the position where the electrode is formed is controlled, and the width Sm of the minute gap is determined. Is represented by the following colors.
Sm = h (tan θ ₁ + tan θ ₂ ) −w
Here, as can be seen from the above equation, in order to generate a minute gap having a width Sm, there is a limit of w <tan θ ₁ + tan θ ₂ . Here, w is the maximum width between the end portions of the mask layer in the opening.

The first angle θ ₁ defines the angle of irradiation for depositing the material for the first time for depositing the material on the substrate through the opening, and is relative to the axis perpendicular to the mask layer surface. The angle formed by the irradiation direction of the material. Further, the second angle θ ₂ defines an irradiation angle of the second material deposition for depositing the material on the substrate through the opening, and the axis and the first angle θ _{In a} two-dimensional plane formed by _one direction, the angle is the first angle θ ₁ (clockwise direction) and the opposite direction (counterclockwise direction) with respect to the axis.

Next, a method for manufacturing an electrode having a minute gap according to the first embodiment will be described with reference to the drawings. FIG. 2 is a conceptual diagram showing a cross-sectional structure of an element (device) in each step of manufacturing an electrode. FIG. 3 is a flowchart showing a manufacturing flow.
As shown in FIG. 2A, a support layer 2 is deposited on the substrate 1 (step S1), a mask layer 3 is deposited on the support layer 2 (step S2), and a resist 4 is deposited on the mask layer 3. Is deposited (step S3). Here, the deposition method of each of the support layer 2, the mask layer 3, and the resist 4 is not particularly limited, and a deposition method suitable for each material such as vapor deposition or spin coating is used.

The thickness of the mask layer 3 needs to be thick enough not to be easily deformed and thin enough not to hinder the subsequent deposition of the electrode material, and is usually 1 / th of the thickness of the support layer 2. About 5 to 1/10.
On the other hand, the thickness of the support layer 2 is set according to the dimension of the electrode having the finally required gap width. The support layer 2 is for fixing the mask layer 3 at a position away from the substrate. That is, the mask layer 3 has a height corresponding to the thickness of the support layer 2 from the surface of the substrate 1 (the surface of the substrate 1 and the mask layer 3). The distance h) is fixed.

Next, as shown in FIG. 2B, an opening pattern 10 for forming an opening in the resist 4 is formed by photolithography (step S4).
Then, the mask layer 3 is etched using the resist 4 as a mask to form an opening 5 in the mask layer 3 as shown in FIG. 2C (step S5).
The etching method in step S6 is not particularly limited, but reactive ion etching with anisotropy is usually used.
Next, after forming the opening 5 in the mask layer 3, the support layer 2 near the opening 5 is isotropically etched as shown in FIG. 2D until at least the surface of the substrate 1 is exposed. (Step S6). Here, it is desirable that the mask layer 3 has a high etching selectivity (relatively low etching rate) with respect to an etchant that isotropically etches the material of the support layer 2.

Although the material of the substrate 1 is not particularly limited, a Si (silicon) substrate having an oxide film or oxynitride film formed on the surface is usually used.
The support layer 2 is preferably an insulator that can be easily etched, that is, a material that can be easily removed by an etchant. For example, in the case of SiO ₂ using tetraethoxysilane (TEOS) as a raw material, the mask layer 3 is diluted with dilute hydrofluoric acid. Since the support layer 3 is isotropically etched from the opening 5, the material is suitable for this embodiment. Here, the formation method of TEOS-SiO ₂ is a commonly used method. SiO ₂ is a support layer 2, using a low pressure CVD (chemical vapor deposition) method, 650 to 750 degrees, by separating the SiO ₂ from TEOS at a partial pressure of 20～40Pa, it is deposited on the substrate 1 It is formed. Since SiO ₂ separated from TEOS is uniformly deposited on the substrate 1 with good flatness, there is no need for flattening.
The mask layer 3 is preferably made of the same material as the main component of the substrate 1. For example, when the substrate 1 is Si, polycrystalline Si is used for the mask layer 3.

Further, in the manufacturing method described above, the support layer 1 and the mask layer 3 may be replaced with two different types of resists as usual, and each may be processed by a lithography process.
However, even in this case, the resist used for the support layer 2 is not mixed with the resist used for the mask layer 3 and is preferably a resist material that is removed isotropically during development. As the resist, a positive type is selected from the viewpoint of controllability, and the resist used for the support layer 2 is more sensitive to projection light in photolithography than the resist used for the support layer 3 (light is scattered inside the resist). It is desirable to use a material that includes an easy-to-use material, etc., and that produces a photosensitive effect over a wider range.

Next, FIG. 4 shows that openings 6 and 7 are formed on both sides of the opening 5 (first opening) forming a gap in order to form a pad for facilitating extraction of the electrode to the outside. It is a conceptual diagram. The relationship between the openings will be described with reference to FIG.
FIG. 4A is a plan view of the mask layer 3 in which the opening 5 is formed as a rectangle (rectangle) as viewed from directly above. Electrode 14a is formed by vapor deposition of the first round of the first angle theta ₁ direction, 14b are formed by the second vapor deposition from a second angle theta ₂ direction.
FIG. 4B is a cross-sectional view taken along line AA in FIGS. 4A and 4C showing the electrode shape to be formed and the electrode material vapor deposition step.
Among these, the opening 6 and the opening 7 form an electrode pad for the electrode formed by the opening 5. Here, the electrode formed by the opening 5 has a minute gap.

For example, in FIG. 4B, the opening 5 that is the first opening has a width w ₁ and a length L ₁ , and the opening 6 that is the second opening has a width w ₂ and a length L ₂ . There, the opening 7 is a third opening is L ₃ width w ₃ length. The distance between the opening 5 and the opening 6 is d _1, the distance between the opening 5 and the opening 7 is d _2.
The mask layer 3 having the above dimensions is fixed to the height h from the surface of the substrate 1 by the support layer 2, and a vertical plane (an axis perpendicular to the plane and each angular direction) on the substrate 1 (ie, the mask layer 3). In the two-dimensional plane, the electrode material is deposited from the direction of the first angle θ ₁ , and then the electrode material is deposited obliquely from the second angle θ _{2 in} the opposite direction. Here, the vapor deposition method of the electrode material is not particularly limited.

The dimensions of the opening 5, the opening 6, and the opening 7 must satisfy the following conditional expression.
w ₁ <h (tan θ ₁ + tan θ ₂ ),
w ₂ > h (tan θ ₁ + tan θ ₂ ),
w ₃ > h (tan θ ₁ + tan θ ₂ ),
d ₁ <h (tan θ ₁ + tan θ ₂ ),
d ₂ <h (tan θ ₁ + tan θ ₂ ),
There is no particular limitation on the length of each of the openings 5, 6, and 7, L ₁ , L ₂ , and L ₃ . By satisfying the above conditional expression, a gap having a length L ₁ and a width Sm (= h (tan θ ₁ + tan θ ₂ ) −w ₁ ) is formed directly below the opening 5 between the electrodes.
Further, immediately below the opening 6 and the opening 7, the gap between the electrodes and the electrode pad portion are connected by overlapping of electrode materials.

FIG. 4C is a plan view of the electrodes formed on the substrate 1 and the gaps between the electrodes as viewed from directly above. Here, since the electrode gap Sm is w = w ₁ as described above,
Sm = h (tan θ ₁ + tan θ ₂ ) −w ₁
It is represented by
In the present embodiment, the thickness of the electrode material to be deposited is not particularly limited, but is usually formed sufficiently thinner than the thickness of the support layer 2. For example, Pt, Cr, Ti, Au, Cu, Co, Ag, or the like is usually used as the electrode material for vapor deposition.

FIG. 5A is a plan view of the mask layer 3 having the opening 5 which is the crank-shaped first opening as viewed from above. In the case of a rectangular (rectangular) opening 5, a gap exceeding the resolution of lithography cannot be created in the length direction.
Therefore, in order to obtain a gap exceeding the resolution of lithography in the length direction, the opening 5 that forms the gap immediately below is formed in a crank shape, that is, a staircase shape, with a side perpendicular to the direction in which the electrode material is deposited. There is a need to.

The crank-shaped opening 5 has a maximum width and length of w ₁ and L ₁ , and further has a width w ₄ (<w ₁ ) and a length L ₄ (<L ₁ ) in the refracting portion. FIGS. 5B and 5C are a conceptual view of the electrodes viewed from the cross-sectional direction and a plan view viewed from above, as in FIGS. 4B and 4C. Electrode 14a is formed by vapor deposition of the first round of the first angle theta ₁ direction, 14b are formed by the second vapor deposition from a second angle theta ₂ direction.
The conditional expression satisfied by the dimension of the opening 5 in the mask layer 3 is the same as that in the case of calculating the width Sm already described.
When the mask layer 3 having the crank-shaped opening 5 is used, the gap between the electrodes is finally Sm ′ so that the width can be obtained from the following equation, and the length is L ₄ .
Sm ′ = h (tan θ ₁ + tan θ ₂ ) −w ₄
It is.

In practical use, it is also possible to prepare a large number of mask patterns at the same time by changing the values of L ₂ and w ₂ when the second opening region is rectangular, and the values of L ₄ and w ₄ when the second opening region is a crank shape in small increments. Conceivable. Thereby, even if the incident angles θ ₁ and θ ₂ and the azimuth angle of the vapor deposition material are inaccurate, it is possible to select a desired size from the completed minute gap.

<Application example>
The application of the present invention will be described below with specific application examples.
<Application example 1>
FIG. 6A is a conceptual diagram showing a cross section of a molecular device in which a conductive self-assembled monolayer (SAM) is sandwiched between electrodes. The molecules used in this molecular film are preferably those having a functional group that selectively adsorbs to the electrode material. For example, when Au is used as the electrode material, a molecule having a thiol group (—SH) is selectively bonded to this Au.
Here, an electrode is prepared, the gap of the electrode is observed from the mask layer 3, and after confirming that the electrode has a desired gap width, the substrate 1 on which the electrode is produced is immersed in a molecular solution. By crushing, a SAM is formed on the electrode. In FIG. 6A, the mask layer 3 is supported by a support layer at a place not shown.

In addition, if the formed molecular film senses light or electromagnetic waves, since the opening 5 exists directly above, the control by light or electromagnetic waves is possible.
For example, photoswitching molecules (such as poly-p-phenyleneethylene (PPE)) are cross-linked in the gap between electrodes, and the current value between the electrodes when light is sensed is detected, so that optical switches and optical sensors can be nanosized. Can be formed. The photosensitive molecule is not particularly limited, and is preferably a molecule having a characteristic that the amount of flowing current changes according to the intensity of light.
In addition, it is possible to form an optical switch device that controls on / off of current by light irradiation.

A field effect transistor is formed by using each of the electrodes 10 and 11 as a source and a drain, using the substrate 1 as a gate, and using the insulating film 8 on the gate as a gate insulating film. When the substrate 1 is an Si substrate, the insulating film 8 is SiO ₂ that is obtained by oxidizing the surface of the Si substrate.
FIG. 6B is a plan view of the portion (gap between the electrodes) surrounded by the broken line in FIG. Here, for simplicity, only the SAM adsorbed on the electrode end face is displayed. In the case of a crank-shaped gap, by adjusting the width and length of the refracting part, a single molecule to several molecules are changed between the electrodes. It is also possible to construct a device that has been cross-linked.
Further, alternatively, (see Non-Patent Document 1) may be trapped spherical molecules or nanoparticles between electrodes, such as C ₆₀ of SAM.

<Application example 2>
FIGS. 7A, 7B, 8A, and 8B are conceptual diagrams showing a surface view and a cross section of an evaluation element when an electrode is used for evaluation of electrical characteristics of a semiconductor thin film.
In this case, it is preferable to use a rectangular opening 5 which is the first opening of the mask layer 3 as shown in FIG. By disposing the semiconductor thin film in the gap between the electrodes, a thin film evaluation element having various gap widths and lengths of the electrode material is deposited twice and the semiconductor thin film is deposited once from the opening 5. It can be easily produced by only these three steps.

Here, a method for forming an evaluation element will be briefly described.
A. In the case where the support layer 2 is formed of SiO _{2 As} a step before step S1 in the flowchart of FIG. 3, in the formation of the gate insulating film 8, thermal oxidation is performed when the substrate 1 is Si, and the substrate 1 is heated to 1000 ° C. It is inserted into a heat treatment furnace and SiO ₂ is formed on the surface of the substrate 1 in an oxygen atmosphere. And the process according to the flowchart of FIG. 3 is performed, and an electrode is formed.
Further, when the support layer 2 is etched in step S6, a difference in etching rate between the TEOS-SiO ₂ support layer 3 and the thermally oxidized SiO ₂ gate insulating film 8 is used to obtain a gate oxide film of a thermal oxide film. The gate oxide film 8 is left in various predetermined thicknesses by adjusting so that 8 is not etched beyond the required thickness. Further, when it is observed from the opening 5 that it is detected that no gate insulating film remains, the substrate 1 is thermally oxidized again to re-form the gate insulating film.

B. When forming the support layer 2 with a resist As a step before forming the support layer, in the method of forming the gate insulating film 8, thermal oxidation is performed when the substrate 1 is Si, for example, a heat treatment furnace heated to 1000 ° C. And SiO ₂ is formed on the surface of the substrate 1 in an oxygen atmosphere. Then, the support layer 2 and the mask layer 3 are sequentially formed on the gate insulating film 8, and electrodes are formed by the resist support layer 2 and the mask layer 3.
Then, after the electrode is formed by the above processing A or B, or before the opening is formed in the mask layer 3 and the electrode is formed, a semiconductor thin film is deposited from the opening 5 to the gap between the electrodes. Thus, an evaluation element is formed.

7A and 7B respectively show a plan view of a thin film evaluation element obtained by evaporating a semiconductor thin film 13 from a direction perpendicular to the substrate 1 after electrode material deposition, and a cross section of the evaluation element. It is a conceptual diagram.
In this application example, since the minute gap between the electrodes is formed immediately below the opening 5 in the mask layer 5, photolithography for forming the semiconductor thin film 13 between the electrodes 12 is unnecessary, and finally the semiconductor thin film 13. Is deposited on the electrode 12 and the gap between the electrodes 12, so that the semiconductor thin film 13 can be prevented from being damaged by the lithography process or the deposition process.

8A and 8B, after forming the opening 5 in the mask layer 3 and before forming the electrode 12 by vapor deposition of the electrode material, the semiconductor thin film 13 is transferred from the opening 5 to the substrate 1. The thin film evaluation element formed by vapor deposition from the direction perpendicular to the surface and then depositing the electrode 12 by the method according to the present embodiment is a plan view seen from above, and a conceptual diagram showing a cross section of the evaluation element. is there.
In this case, since the semiconductor thin film 13 is formed only on the surface of the substrate 1 and is formed flat without any step due to the electrodes, problems such as characteristic changes due to the unevenness of the base do not occur. In order to avoid disconnection of the metal electrode 12, the thickness of the semiconductor thin film 13 is preferably larger than the thickness of the metal electrode 7. The point that the lithography process is unnecessary after the formation of the semiconductor thin film 13 is the same as the element for thin film evaluation shown in FIG.
Both the evaluation elements in FIGS. 7 and 8 have the same structure as a TFT (thin film transistor) by using the substrate 1 as a gate electrode, and can be operated as a TFT.

It is a conceptual diagram which shows the cross section of an element explaining the formation method of the electrode which has a micro gap | interval by one Embodiment of this invention. It is a conceptual diagram which shows the cross section of the element in each process in manufacture of the electrode which has the structure of FIG. It is a flowchart explaining the manufacturing method of the structure of the electrode of FIG. It is a conceptual diagram explaining the structure of the electrode in this embodiment. It is a conceptual diagram explaining the structure of the electrode in this embodiment. It is a conceptual diagram which shows the structure of the molecular device which applied the electrode formation by this embodiment. It is a conceptual diagram which shows the structure of the element for thin film evaluation which applied the electrode formation by this embodiment. It is a conceptual diagram which shows the structure of the element for thin film evaluation which applied the electrode formation by this embodiment. It is a conceptual diagram which shows the cross section of an element explaining the formation method of the electrode which has the conventional minute gap.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Supporting layer 3 ... Mask layer 4 ... Resist 5, 6, 7 ... Opening 8 ... Gate insulating film 9 ... Self-assembled monomolecule
DESCRIPTION OF SYMBOLS 10, 11 ... Electrode 12, 14a, 14b ... Electrode 13 ... Semiconductor thin film

Claims (4)

An electrode manufacturing method for forming an electrode having a minute gap using a mask layer having an opening,
A first vapor deposition step of vapor-depositing an electrode material on the substrate through a first opening from a first angular direction with respect to an axis perpendicular to the mask layer surface;
In a two-dimensional plane formed by the axis and the first angular direction, the electrode material is placed on the substrate through the first opening from a second angular direction opposite to the first angle with respect to the axis. It has a second deposition step of depositing,
The step of forming the mask layer comprises:
A support layer forming step of forming a support layer on the substrate;
A mask layer forming step of forming a mask layer on the support layer;
A resist coating step of coating a resist on the mask layer;
An opening pattern forming step of forming an opening pattern in the resist;
Etching using the resist as a mask, an opening forming region for forming a first opening in the mask layer;
A support layer etching step of etching the support layer from the first opening until at least the substrate is exposed;
Have
The mask layer further includes a second opening and a third opening, each having a predetermined distance on both sides of the first opening,
The first angle θ ₁ is in the range of 0 ° <θ ₁ <90 °, the second angle θ ₂ is 0 ° <θ ₂ <90 °, and the first opening of the mask layer is The width is w ₁ , the width of the second opening is w ₂ , the width of the third opening is w ₃ , the distance between the first and second openings is d ₁ , the second and third When the distance between the openings is d ₂ and the thickness of the support layer is h,
w ₁ <h (tan θ ₁ + tan θ ₂ ),
w ₂ > h (tan θ ₁ + tan θ ₂ ),
w ₃ > h (tan θ ₁ + tan θ ₂ ),
d ₁ <h (tan θ ₁ + tan θ ₂ ),
d ₂ <h (tan θ ₁ + tan θ ₂ ),
An electrode manufacturing method characterized in that all of the conditional expressions are satisfied . A material the mask layer comprises Si, said support layer is a material including SiO _2, according to claim 1, wherein the substrate is Si having an oxide film or oxynitride film on the surface Electrode manufacturing method. An electrode manufacturing method for forming an electrode having a minute gap using a mask layer having an opening,
A first vapor deposition step of vapor-depositing an electrode material on the substrate through a first opening from a first angular direction with respect to an axis perpendicular to the mask layer surface;
In a two-dimensional plane formed by the axis and the first angular direction, the electrode material is placed on the substrate through the first opening from a second angular direction opposite to the first angle with respect to the axis. A second vapor deposition step for vapor deposition;
Have
The step of forming the mask layer comprises:
A support layer forming step of forming a support layer with a resist on the substrate;
A mask layer forming step of forming a mask layer on the support layer;
An exposure step of performing exposure to form a first opening on the support layer and the mask layer;
A first developing step for forming a first opening in the mask layer;
And a second development step of removing the support layer so that at least the surface of the substrate is exposed by additional development from the first opening, and the resist used for the support layer and the mask layer is a positive type a resist, Ri resist high sensitivity der compared to the resist used for the mask layer used for the supporting layer,
The mask layer further includes a second opening and a third opening, each having a predetermined distance on both sides of the first opening,
The first angle θ ₁ is in the range of 0 ° <θ ₁ <90 °, the second angle θ ₂ is 0 ° <θ ₂ <90 °, and the first opening of the mask layer is The width is w ₁ , the width of the second opening is w ₂ , the width of the third opening is w ₃ , the distance between the first and second openings is d ₁ , the second and third When the distance between the openings is d ₂ and the thickness of the support layer is h,
w ₁ <h (tan θ ₁ + tan θ ₂ ),
w ₂ > h (tan θ ₁ + tan θ ₂ ),
w ₃ > h (tan θ ₁ + tan θ ₂ ),
d ₁ <h (tan θ ₁ + tan θ ₂ ),
d ₂ <h (tan θ ₁ + tan θ ₂ ),
All the conditional expressions are satisfied
An electrode manufacturing method characterized by the above . Forming an electrode with a minute gap by the method for producing an electrode according to any one of claims 1 to 3 ;
Depositing a material different from the electrode between the electrodes.

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